CN113690323B - Substrate-free single-mesa Schottky diode based on thin film technology - Google Patents
Substrate-free single-mesa Schottky diode based on thin film technology Download PDFInfo
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- CN113690323B CN113690323B CN202111061086.5A CN202111061086A CN113690323B CN 113690323 B CN113690323 B CN 113690323B CN 202111061086 A CN202111061086 A CN 202111061086A CN 113690323 B CN113690323 B CN 113690323B
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- schottky diode
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- thin film
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- 239000010409 thin film Substances 0.000 title claims description 22
- 238000005516 engineering process Methods 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 230000005540 biological transmission Effects 0.000 claims abstract description 34
- 230000008093 supporting effect Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 22
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a substrate-free single-mesa Schottky diode based on a film process, which comprises a supporting film and a Schottky diode embedded in the supporting film; the Schottky diode comprises anode transmission metal and cathode transmission metal which are positioned at two ends, a cathode table top is arranged below the cathode transmission metal, and the anode transmission metal forms Schottky contact with the cathode table top through metal fingers. The invention uses the film to support the whole diode structure, removes the substrate and the anode table top, and increases the distance between the cathode and the anode for transmitting metal to the maximum extent, thereby greatly reducing the parasitic influence. The structure provided by the invention has the characteristics of low cost, easiness in implementation and the like, and has good application prospect in terahertz solid-state circuits, especially terahertz monolithic integrated circuits with the frequency higher than 0.5 THz.
Description
Technical Field
The invention relates to the field of device design applied to terahertz solid-state circuits, in particular to a substrate-free single-mesa Schottky diode based on a thin film process.
Background
Terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1-10 THz (corresponding wavelengths of 3 mm-30 um), the long wave band of which is adjacent to millimeter waves, the short wave band is close to infrared rays, and the short wave band is in the intersection region of electronics and photonics. They are characterized in that, compared to microwaves of lower frequency bands: 1. the frequency spectrum range is wide and the information capacity is large. 2. The antenna with narrow wave beam and high gain is easy to realize, so that the resolution is high and the anti-interference performance is good. 3. The ability to penetrate the plasma is strong. 4. The Doppler frequency shift is large, and the speed measurement sensitivity is high. Waves are of great significance in communication, radar, guidance, remote sensing technology, radioastronomy and spectroscopy.
The schottky diode has the advantages of strong nonlinear effect, simple structure, high reliability, small noise and the like, and is widely applied to terahertz solid-state frequency conversion circuits. Parasitic parameters and intrinsic parameters of the traditional planar Schottky diode in the terahertz frequency range are even larger than those of the traditional planar Schottky diode, and nonlinear characteristics of the device are seriously affected. However, due to the limitations of the substrate thickness and mesa distance of the conventional planar structure, the parasitic capacitance of the diode is difficult to be reduced below 1 fF.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a substrate-free single-mesa Schottky diode based on a thin film process, which has the advantages that the whole diode structure is supported by a thin film, the substrate and the anode mesa are removed, the distance between the cathode and anode for transmitting metal is furthest increased, and the parasitic influence is greatly reduced.
The aim of the invention is realized by the following technical scheme: a substrate-free single mesa Schottky diode based on a thin film process comprises a support thin film, and a Schottky diode positioned on or wrapped in the support thin film.
Further, the schottky diode adopts a single-tube structure and comprises anode transmission metal and cathode transmission metal which are respectively positioned at two ends, an epitaxial layer positioned below the cathode transmission metal and a cathode table top positioned below the epitaxial layer, wherein the epitaxial layer is in ohmic contact with the cathode transmission metal, and the anode transmission metal is in schottky contact with the cathode table top through metal fingers.
Further, the schottky diode adopts a reverse geminate transistor structure, and comprises two transmission metals respectively positioned at two ends, a cathode table top is arranged below the two transmission metals, and the transmission metals are in schottky contact with the cathode table top at the other end through metal fingers.
Further, the film thickness is greater than the cathode mesa thickness. The metal fingers are supported by the support film.
Further, the thickness of the supporting film is 3-5um, and the supporting film can provide support for the whole Schottky diode instead of the semiconductor substrate while performing passivation.
The beneficial effects of the invention are as follows: the invention improves the whole structure of the diode, supports the whole structure of the diode by the film, removes the substrate and the anode table top, increases the distance between the cathode and the anode for transmitting metal to the maximum extent, and greatly reduces the parasitic influence. The structure provided by the invention has the characteristics of low cost, easiness in implementation and the like, and has good application prospect in terahertz solid-state circuits, especially terahertz monolithic integrated circuits with the frequency higher than 0.5 THz.
Drawings
Fig. 1 is a schematic diagram of a substrate-free single mesa schottky diode structure employing a single tube structure;
fig. 2 is a schematic diagram of a substrate-less single mesa schottky diode structure employing a reverse pair transistor structure;
fig. 3 is a schematic diagram of an application of a substrate-less single mesa schottky diode in a thin film terahertz monolithic integrated mixer circuit;
fig. 4 is an assembly schematic diagram of a thin film terahertz monolithic integrated mixer circuit.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings.
The invention discloses a substrate-free single-mesa Schottky diode based on a thin film process, which comprises a supporting thin film and a Schottky diode positioned on the supporting thin film or wrapped in the supporting thin film.
The schottky diode adopts a single-tube structure, as shown in fig. 1, and comprises anode transmission metal and cathode transmission metal which are respectively positioned at two ends, an epitaxial layer positioned below the cathode transmission metal, and a cathode table top positioned below the epitaxial layer, wherein the epitaxial layer is in ohmic contact with the cathode transmission metal, and the anode transmission metal is in schottky contact with the cathode table top through metal fingers.
The schottky diode adopts a reverse geminate transistor structure, as shown in fig. 2, and comprises two transmission metals respectively positioned at two ends, wherein cathode table tops are arranged below the two transmission metals, and the transmission metals are respectively in schottky contact with the cathode table top at the other end through metal fingers.
The thickness of the film wrapping the diode structure is h, and the relative dielectric constant is epsilon r The length of the metal finger is l, and the length of the metal finger is w. By adjusting the thickness h of the film, the relative dielectric constant epsilon r Metal finger length l, value of metal finger length w can be changed for substrate-free single unitThe total parasitic capacitance value of the face schottky diode.
The thickness of the film is larger than that of the cathode table top, and a better supporting effect can be achieved. The metal fingers are not suspended but supported by the thin film, so that interconnection between the Schottky junction and the metal of the anode transmission line is realized, and the mechanical strength of the metal fingers supported by the thin film can be ensured under the condition of realizing the extremely large length-width ratio. Meanwhile, the anode transmission metal also grows directly on the film, so that the anode semiconductor table top is removed, and the total parasitic capacitance is further reduced.
The thickness of the supporting film is 3-5um, and the supporting film can replace a semiconductor substrate to provide support for the whole Schottky diode while playing a passivation role. Compared with the traditional planar diode, the invention has the advantages that the substrate and the anode table top are completely removed, and the anode transmission metal is supported and fixed by the support film; meanwhile, the metal finger can realize a very large length-width ratio, so that high-frequency parasitics (mainly parasitic capacitance) caused by the physical structure of the diode are greatly reduced.
The schottky diode of the present invention may be partially exposed (i.e., the upper surface of the schottky diode is not covered by a film and is exposed to air) or may be entirely covered by a film. The partially exposed transmission metal of the substrate-free single-mesa Schottky diode is exposed on the surface of the film and can be used for hybrid integration. The specific structure may be selected according to the application objective.
Fig. 3 illustrates the application of the substrate-less single mesa schottky diode of the present invention to a terahertz monolithic integrated circuit. The two ends of the diode are connected with the central transmission line metal of the film transmission structure, and the supporting of the whole circuit of the cavity is realized through the metal cantilever, and the assembly condition is shown in figure 4.
The invention mainly innovates and proposes to take an ultrathin low-dielectric-constant film as a structural support, and discloses a substrate-free single-mesa Schottky diode structure based on a film process, which greatly reduces high-frequency parasitics of a diode and improves high-frequency performance of the diode.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (4)
1. The substrate-free single-mesa Schottky diode based on the thin film process is characterized by comprising a supporting thin film and a Schottky diode which is positioned on the supporting thin film or wrapped in the supporting thin film;
the Schottky diode adopts a single-tube structure and comprises anode transmission metal and cathode transmission metal which are respectively positioned at two ends, an epitaxial layer positioned below the cathode transmission metal, and a cathode table top positioned below the epitaxial layer, wherein the epitaxial layer is in ohmic contact with the cathode transmission metal, and the anode transmission metal is in Schottky contact with the cathode table top through metal fingers;
or the Schottky diode adopts a reverse geminate transistor structure and comprises two transmission metals respectively positioned at two ends, a cathode table top is arranged below the two transmission metals, and the transmission metals are respectively in Schottky contact with the cathode table top at the other end through metal fingers.
2. The film process-based single mesa schottky diode of claim 1 wherein the film thickness is greater than the cathode mesa thickness.
3. The thin film process-based single mesa schottky diode of claim 1 wherein the metal fingers are supported by a support thin film.
4. The substrate-free single mesa schottky diode of claim 1 wherein the support film has a thickness of 3-5um and provides support for the entire schottky diode in place of the semiconductor substrate while the support film is passivating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111061086.5A CN113690323B (en) | 2021-09-10 | 2021-09-10 | Substrate-free single-mesa Schottky diode based on thin film technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111061086.5A CN113690323B (en) | 2021-09-10 | 2021-09-10 | Substrate-free single-mesa Schottky diode based on thin film technology |
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| Publication Number | Publication Date |
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| CN113690323A CN113690323A (en) | 2021-11-23 |
| CN113690323B true CN113690323B (en) | 2024-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887346A (en) * | 2012-12-24 | 2014-06-25 | 比亚迪股份有限公司 | Schottky diode and manufacturing method thereof |
| JP2015041714A (en) * | 2013-08-23 | 2015-03-02 | 株式会社レーザーシステム | Schottky barrier diode, method of manufacturing schottky barrier diode, power transmission system, and wireless connection connector for power supply |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
| CN111048583A (en) * | 2019-12-23 | 2020-04-21 | 电子科技大学 | Planar Schottky diode with multi-finger structure |
| CN111952161A (en) * | 2020-07-21 | 2020-11-17 | 南京中电芯谷高频器件产业技术研究院有限公司 | Method for manufacturing substrate-free vertical Schottky diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9722041B2 (en) * | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
| US10510800B2 (en) * | 2016-02-09 | 2019-12-17 | The Penn State Research Foundation | Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication |
-
2021
- 2021-09-10 CN CN202111061086.5A patent/CN113690323B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887346A (en) * | 2012-12-24 | 2014-06-25 | 比亚迪股份有限公司 | Schottky diode and manufacturing method thereof |
| JP2015041714A (en) * | 2013-08-23 | 2015-03-02 | 株式会社レーザーシステム | Schottky barrier diode, method of manufacturing schottky barrier diode, power transmission system, and wireless connection connector for power supply |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
| CN111048583A (en) * | 2019-12-23 | 2020-04-21 | 电子科技大学 | Planar Schottky diode with multi-finger structure |
| CN111952161A (en) * | 2020-07-21 | 2020-11-17 | 南京中电芯谷高频器件产业技术研究院有限公司 | Method for manufacturing substrate-free vertical Schottky diode |
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| CN113690323A (en) | 2021-11-23 |
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