CN113668045A - 一种颗粒硅直接用于区熔法制备单晶硅的装置及方法 - Google Patents
一种颗粒硅直接用于区熔法制备单晶硅的装置及方法 Download PDFInfo
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- CN113668045A CN113668045A CN202110978491.7A CN202110978491A CN113668045A CN 113668045 A CN113668045 A CN 113668045A CN 202110978491 A CN202110978491 A CN 202110978491A CN 113668045 A CN113668045 A CN 113668045A
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- silicon
- granular silicon
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- granular
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 131
- 239000010703 silicon Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 38
- 238000004857 zone melting Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 132
- 239000013078 crystal Substances 0.000 claims abstract description 91
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 30
- 230000006698 induction Effects 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 34
- 230000007246 mechanism Effects 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 239000008187 granular material Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 14
- 239000002994 raw material Substances 0.000 abstract description 8
- 239000000155 melt Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 22
- 239000002210 silicon-based material Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110978491.7A CN113668045A (zh) | 2021-08-24 | 2021-08-24 | 一种颗粒硅直接用于区熔法制备单晶硅的装置及方法 |
Applications Claiming Priority (1)
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CN202110978491.7A CN113668045A (zh) | 2021-08-24 | 2021-08-24 | 一种颗粒硅直接用于区熔法制备单晶硅的装置及方法 |
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CN113668045A true CN113668045A (zh) | 2021-11-19 |
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CN202110978491.7A Pending CN113668045A (zh) | 2021-08-24 | 2021-08-24 | 一种颗粒硅直接用于区熔法制备单晶硅的装置及方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114438584A (zh) * | 2022-01-17 | 2022-05-06 | 徐州晶睿半导体装备科技有限公司 | 一种单晶炉多次加料系统及加料方法 |
CN114959874A (zh) * | 2022-04-24 | 2022-08-30 | 杭州中欣晶圆半导体股份有限公司 | 一种利用拉速改善径向晶棒rrg值的系统及其方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
JPH05132389A (ja) * | 1991-11-11 | 1993-05-28 | Shin Etsu Handotai Co Ltd | Fz法半導体単結晶製造装置 |
WO2008128378A1 (fr) * | 2007-04-19 | 2008-10-30 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Procédé à traction verticale et à fusion de zones pour produire du silicium monocristallin |
US20090158996A1 (en) * | 2007-12-25 | 2009-06-25 | Mitsubishi Materials Corporation | Apparatus for producing single crystal silicon |
DE102008030311A1 (de) * | 2008-06-30 | 2009-12-31 | Crystal Growing Systems Gmbh | Verfahren und Vorrichtung zur Herstellung eines Einkristalls, insbesondere eines Silizium-Einkristalls, und Schmelzstab hierfür |
WO2016049947A1 (zh) * | 2014-09-30 | 2016-04-07 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
-
2021
- 2021-08-24 CN CN202110978491.7A patent/CN113668045A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
JPH05132389A (ja) * | 1991-11-11 | 1993-05-28 | Shin Etsu Handotai Co Ltd | Fz法半導体単結晶製造装置 |
WO2008128378A1 (fr) * | 2007-04-19 | 2008-10-30 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Procédé à traction verticale et à fusion de zones pour produire du silicium monocristallin |
US20090158996A1 (en) * | 2007-12-25 | 2009-06-25 | Mitsubishi Materials Corporation | Apparatus for producing single crystal silicon |
DE102008030311A1 (de) * | 2008-06-30 | 2009-12-31 | Crystal Growing Systems Gmbh | Verfahren und Vorrichtung zur Herstellung eines Einkristalls, insbesondere eines Silizium-Einkristalls, und Schmelzstab hierfür |
WO2016049947A1 (zh) * | 2014-09-30 | 2016-04-07 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
Non-Patent Citations (1)
Title |
---|
贺格平等: "《半导体材料》", 冶金工业出版社 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114438584A (zh) * | 2022-01-17 | 2022-05-06 | 徐州晶睿半导体装备科技有限公司 | 一种单晶炉多次加料系统及加料方法 |
CN114959874A (zh) * | 2022-04-24 | 2022-08-30 | 杭州中欣晶圆半导体股份有限公司 | 一种利用拉速改善径向晶棒rrg值的系统及其方法 |
CN114959874B (zh) * | 2022-04-24 | 2024-04-23 | 杭州中欣晶圆半导体股份有限公司 | 一种利用拉速改善径向晶棒rrg值的系统及其方法 |
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Address after: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant after: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant before: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
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Application publication date: 20211119 |