CN113652677A - Horizontal copper deposition and photoresist removal process for circuit board - Google Patents
Horizontal copper deposition and photoresist removal process for circuit board Download PDFInfo
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- CN113652677A CN113652677A CN202110873839.6A CN202110873839A CN113652677A CN 113652677 A CN113652677 A CN 113652677A CN 202110873839 A CN202110873839 A CN 202110873839A CN 113652677 A CN113652677 A CN 113652677A
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- copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 119
- 239000010949 copper Substances 0.000 title claims abstract description 119
- 230000008021 deposition Effects 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000008569 process Effects 0.000 title claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 67
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000004140 cleaning Methods 0.000 claims abstract description 42
- 239000003292 glue Substances 0.000 claims abstract description 40
- 230000003213 activating effect Effects 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000007605 air drying Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 47
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- 238000002791 soaking Methods 0.000 claims description 18
- 230000004913 activation Effects 0.000 claims description 16
- 238000006386 neutralization reaction Methods 0.000 claims description 15
- 239000003638 chemical reducing agent Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- 239000003381 stabilizer Substances 0.000 claims description 9
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 6
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 57
- 238000007747 plating Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000003750 conditioning effect Effects 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 4
- 239000004067 bulking agent Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
- C23C18/163—Supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2093—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by electrochemical pretreatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrochemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a horizontal copper deposition and photoresist removal process for a circuit board, wherein a circuit board base material is horizontally conveyed along a conveying belt and sequentially subjected to the following processing steps: bulking, removing glue, pre-neutralizing, cleaning, micro-etching, activating, reducing, depositing copper, and finally, air-drying and taking out the circuit board to obtain the circuit board. The plating layer obtained by the horizontal copper deposition and photoresist removal process of the circuit board has excellent plating layer covering capacity, and the horizontal copper deposition and photoresist removal process can ensure that the inner layer copper and the hole copper have better bonding force, obtain an excellent and reliable chemical copper deposition layer, and can deposit good chemical copper layers for blind holes and through holes. In addition, the horizontal heavy copper of circuit board of this embodiment removes gluey technology, circuit board substrate carry out each processing step along conveyer belt horizontal transport, and degree of automation is high, and workman working strength is low, and horizontal transport also is convenient for seal the system, reduces the influence to all ring edge borders.
Description
Technical Field
The invention relates to the field of circuit board processing, in particular to a horizontal copper deposition and photoresist removal process for a circuit board.
Background
In circuit board manufacturing technology, one of the key steps is the copper deposition process. The method mainly has the functions that a layer of uniform conducting layer is deposited on the wall of a non-metal hole of the double-sided and multi-layer printed circuit board through oxidation-reduction reaction, and then electroplating, thickening and copper plating are carried out, so that the purpose of a loop is achieved. To achieve the purpose, the copper deposition solution with stable performance and reliability must be selected and a correct, feasible and effective copper deposition process must be established.
The traditional copper deposition process adopts a vertical gantry copper deposition mode, a hanging basket is used for containing a circuit board, and the circuit board is controlled by an operator to be sequentially soaked in a bulking tank, a neutralizing tank, a micro-etching tank, an activating tank, a reducing tank and a copper deposition tank to complete the copper deposition process. The traditional processing mode has large influence on the surrounding environment, low automation degree and high working strength, is difficult to control the quality of products, causes a plurality of defects and is urgent to be improved.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a horizontal copper deposition and photoresist removal process for a circuit board, which has high automation degree and low working strength and can obtain high-quality products.
According to the horizontal copper deposition and photoresist removal process for the circuit board, disclosed by the embodiment of the first aspect of the invention, the circuit board substrate is horizontally conveyed along the conveying belt and sequentially subjected to the following processing steps:
bulking, namely bulking the base material by using a bulking liquid under the ultrasonic condition, wherein the ultrasonic power is 80-100W, the bulking temperature is 75-85 ℃, the bulking time is 50-80S, and washing to obtain the bulked base material;
removing glue, namely, under the ultrasonic condition, using a glue removing solution to perform glue removing treatment on the bulked base material, wherein the ultrasonic power is 80-100W, the glue removing temperature is 80-90 ℃, the glue removing current is 800-1500A, the glue removing time is 120-160S, and washing to obtain the base material after glue removing treatment;
pre-neutralizing, namely performing pre-neutralizing treatment on the substrate subjected to the degumming treatment by using a neutralizing solution, wherein the pre-neutralizing temperature is room temperature, and the pre-neutralizing time is 5-10S, and washing with water to obtain the substrate subjected to the pre-neutralizing treatment;
neutralizing, namely neutralizing the pre-neutralized base material by using a neutralizing liquid under the ultrasonic condition, wherein the ultrasonic power is 80-100W, the neutralizing temperature is 45-51 ℃, the neutralizing time is 30-40S, and washing with water to obtain the neutralized base material;
cleaning, namely, under the ultrasonic condition, performing first cleaning treatment on the neutralized base material by using an adjusting solution, washing with water, wherein the ultrasonic power is 80-100W, the cleaning temperature is 45-55 ℃, and the first cleaning time is 30-40S; under the ultrasonic condition, carrying out secondary cleaning treatment on the substrate after the primary cleaning by using a neutralization solution, washing with water to obtain the cleaned substrate, wherein the ultrasonic power is 80-100W, the cleaning temperature is 46-51 ℃, and the primary cleaning time is 20-30S;
microetching, namely performing microetching treatment on the cleaned base material by using microetching liquid, washing with water to obtain the microetched base material, wherein the microetching temperature is 28-32 ℃, and the microetching time is 50-60 seconds;
activating, namely, using an activating solution to perform activating treatment on the substrate after the microetching treatment, wherein the activating temperature is 47-53 ℃, the activating time is 40-50S, and washing with water to obtain the activated substrate;
reducing, namely, reducing the activated base material by using a reducing solution at the temperature of 33-37 ℃ for 35-45S, and washing with water to obtain the reduced base material;
and (3) copper deposition, namely immersing the reduced base material into horizontal copper deposition liquid for copper deposition, wherein the copper deposition temperature is 30-36 ℃, the pre-contact voltage is 2.5V, the copper deposition time is 180 plus 300S, and the circuit board is obtained by washing, air drying and board discharging.
The horizontal copper deposition and photoresist removal process for the circuit board according to the embodiment of the first aspect of the invention at least has the following beneficial effects: the plating layer obtained by the horizontal copper deposition and photoresist removal process of the circuit board has excellent plating layer covering capacity, and the horizontal copper deposition and photoresist removal process can ensure that the inner layer copper and the hole copper have better bonding force, obtain an excellent and reliable chemical copper deposition layer, and can deposit good chemical copper layers for blind holes and through holes. In addition, the horizontal heavy copper of circuit board of this embodiment removes gluey technology, circuit board substrate carry out each processing step along conveyer belt horizontal transport, and degree of automation is high, and workman working strength is low, and horizontal transport also is convenient for seal the system, reduces the influence to all ring edge borders.
According to the horizontal copper deposition and photoresist removal process for the circuit board, the base material is pre-soaked before the activation step, the base material after the microetching treatment is pre-soaked by using the activation liquid, the pre-soaking temperature is room temperature, the pre-soaking time is 10-20S, and the base material after the pre-soaking treatment enters the activation step.
According to the first aspect of the invention, the horizontal copper deposition and photoresist removal process for the circuit board comprises the following steps: 85-115 parts of copper melting base agent, 7-11 parts of copper melting stabilizer, 45-55 parts of copper melting additive and 13-21 parts of copper melting reducing agent.
According to the horizontal copper deposition and photoresist removal process for the circuit board, disclosed by the invention, the horizontal copper deposition solution comprises 100 parts of copper chemical base agent, 9 parts of copper chemical stabilizer, 50 parts of copper chemical additive and 17 parts of copper chemical reducing agent.
According to the horizontal copper deposition and photoresist removal process of the circuit board, the copper-dissolving basic agent, the copper-dissolving stabilizer, the copper-dissolving additive and the copper-dissolving reducing agent are sequentially added into pure water according to the parts by weight, and the mixture is heated to 30-36 ℃ to obtain horizontal copper deposition liquid.
According to the circuit board horizontal copper deposition and photoresist removal process, the horizontal copper deposition solution comprises a sodium hydroxide solution.
According to the horizontal copper deposition and photoresist removal process for the circuit board, disclosed by the invention, the micro-etching solution comprises 80-120 parts of sodium persulfate and 15-40 parts of sulfuric acid.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of the steps of the horizontal copper deposition and photoresist removal process for a circuit board according to the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, several means are one or more, and more means are two or more. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
As shown in FIG. 1, in the horizontal copper deposition and stripping process for a circuit board, a circuit board substrate is horizontally conveyed along a conveying belt, and sequentially undergoes the steps of bulking, glue removal, pre-neutralization, cleaning, microetching, activation, reduction and copper deposition, each step is followed by water washing, and finally, the circuit board is taken out after air drying to obtain the circuit board.
Example 1:
a horizontal copper deposition and photoresist removal process for a circuit board comprises the following steps:
s1, bulking, namely, under the ultrasonic condition, bulking the base material by using a bulking liquid prepared by a bulking agent and sodium hydroxide, wherein the ultrasonic power is 100W, the bulking temperature is 80 ℃, the bulking time is 65S, and the base material is washed by water to obtain a bulked base material;
s2, removing the glue, namely, under the ultrasonic condition, using glue removing liquid prepared by using a glue removing agent containing permanganate and sodium hydroxide to remove the glue from the bulked base material, wherein the ultrasonic power is 100W, the glue removing temperature is 85 ℃, the glue removing current is 1000A, the glue removing time is 140S, and the base material after glue removing treatment is obtained by washing with water;
s3, pre-neutralizing, namely, pre-neutralizing the substrate subjected to the degumming treatment by using a neutralizing solution prepared from a neutralizing agent and sulfuric acid, wherein the pre-neutralizing temperature is room temperature, the pre-neutralizing time is 8S, and washing with water to obtain the substrate subjected to the pre-neutralizing treatment;
s4, neutralizing, namely neutralizing the substrate subjected to the pre-neutralization treatment by using a neutralizing solution under the ultrasonic condition, wherein the ultrasonic power is 100W, the neutralizing temperature is 48 ℃, and the neutralizing time is 35S, and washing by water to obtain a neutralized substrate;
s5, cleaning, namely, under the ultrasonic condition, performing first cleaning treatment on the neutralized base material by using a conditioning solution prepared by adding water into a conditioning agent, wherein the ultrasonic power is 100W, the cleaning temperature is 50 ℃, the first cleaning time is 35S, and washing with water; under the ultrasonic condition, carrying out secondary cleaning treatment on the substrate after the primary cleaning by using a neutralization solution, washing with water to obtain the cleaned substrate, wherein the ultrasonic power is 100W, the cleaning temperature is 48 ℃, and the primary cleaning time is 25S;
s6, microetching, namely, carrying out microetching treatment on the cleaned base material by using microetching liquid prepared from sodium persulfate and sulfuric acid, washing with water at the microetching temperature of 30 ℃ for 55S to obtain the microetched base material;
s7, activating, namely, pre-soaking the substrate before the activating step, and pre-soaking the substrate after the microetching treatment by using activating liquid prepared by an activating agent, wherein the pre-soaking temperature is room temperature, and the pre-soaking time is 15S; carrying out activation treatment on the pre-soaked base material by using an activation solution, washing with water at the activation temperature of 50 ℃ for 45S to obtain an activated base material;
s8, reducing, namely, reducing the activated base material by using a reducing solution prepared by a reducing agent at the reducing temperature of 35 ℃ for 40S, and washing with water to obtain the reduced base material;
and S9, depositing copper, immersing the reduced base material into horizontal copper deposition liquid for copper deposition, wherein the copper deposition temperature is 33 ℃, the pre-contact voltage is 2.5V, the copper deposition time is 240S, washing with water, finally respectively drying through a hot air section and a cold air section, and taking out the circuit board to obtain the circuit board.
The horizontal copper deposition solution comprises 85-115 parts of copper melting basic agent, 7-11 parts of copper melting stabilizer, 45-55 parts of copper melting additive and 13-21 parts of copper melting reducing agent. In this example, the horizontal copper deposition solution specifically includes 100 parts of copper-dissolving base agent, 9 parts of copper-dissolving stabilizer, 50 parts of copper-dissolving additive and 17 parts of copper-dissolving reducer. The method for preparing the horizontal copper precipitation solution of the embodiment is as follows: firstly, 2/3-volume pure water is injected into the tank, and an internal circulating pump is started for stirring; slowly adding 100 parts of copper dissolving base agent solution; slowly adding 9 parts of copper stabilizer solution; then slowly adding 50 parts of copper dissolving additive solution; finally, 17 parts of copper reducing agent solution is slowly added; and (3) adding pure water to a standard liquid level, starting heating and cooling equipment, and heating the solution to above 30 ℃ to obtain the horizontal copper precipitation solution.
Further, the microetching solution of the present embodiment includes 100 parts of sodium persulfate, and 27 parts of sulfuric acid.
Example 2:
a horizontal copper deposition and photoresist removal process for a circuit board comprises the following steps:
s1, bulking, namely bulking the base material by using a bulking liquid prepared by a bulking agent and sodium hydroxide under the ultrasonic condition, wherein the ultrasonic power is 90W, the bulking temperature is 75 ℃, the bulking time is 50S, and washing to obtain the bulked base material;
s2, removing the glue, namely, under the ultrasonic condition, using glue removing liquid prepared by using a glue removing agent containing permanganate and sodium hydroxide to remove the glue from the bulked base material, wherein the ultrasonic power is 90W, the glue removing temperature is 80 ℃, the glue removing current is 800A, the glue removing time is 160S, and the base material after glue removing treatment is obtained by washing with water;
s3, pre-neutralizing, namely, pre-neutralizing the substrate subjected to the degumming treatment by using a neutralizing solution prepared from a neutralizing agent and sulfuric acid, wherein the pre-neutralizing temperature is room temperature, the pre-neutralizing time is 10S, and washing with water to obtain the substrate subjected to the pre-neutralizing treatment;
s4, neutralizing, namely neutralizing the substrate subjected to the pre-neutralization treatment by using a neutralization solution under the ultrasonic condition, wherein the ultrasonic power is 90W, the neutralization temperature is 45 ℃, and the neutralization time is 40S, and washing with water to obtain a neutralized substrate;
s5, cleaning, namely, under the ultrasonic condition, performing first cleaning treatment on the neutralized base material by using a conditioning solution prepared by adding water into a conditioning agent, wherein the ultrasonic power is 90W, the cleaning temperature is 45 ℃, the first cleaning time is 40S, and washing with water; under the ultrasonic condition, carrying out secondary cleaning treatment on the substrate after the primary cleaning by using a neutralization solution, washing with water to obtain the cleaned substrate, wherein the ultrasonic power is 90W, the cleaning temperature is 46 ℃, and the primary cleaning time is 30S;
s6, microetching, namely, carrying out microetching treatment on the cleaned base material by using microetching liquid prepared from sodium persulfate and sulfuric acid, wherein the microetching temperature is 28 ℃, the microetching time is 60S, and washing with water to obtain the microetched base material;
s7, activating, namely, pre-soaking the substrate before the activating step, and pre-soaking the substrate after the microetching treatment by using activating liquid prepared by an activating agent, wherein the pre-soaking temperature is room temperature, and the pre-soaking time is 20S; performing activation treatment on the pre-soaked base material by using an activation solution, washing with water at the activation temperature of 47 ℃ for 50S to obtain an activated base material;
s8, reducing, namely, reducing the activated base material by using a reducing solution prepared by a reducing agent at the reducing temperature of 33 ℃ for 45S, and washing with water to obtain the reduced base material;
and S9, depositing copper, immersing the reduced base material into horizontal copper deposition liquid for copper deposition, wherein the copper deposition temperature is 30 ℃, the pre-contact voltage is 2.5V, the copper deposition time is 300S, washing with water, finally respectively drying through a hot air section and a cold air section, and taking out the circuit board to obtain the circuit board.
The composition of the horizontal copper deposition solution and the microetching solution in the present example is the same as that in example 1.
Example 3:
a horizontal copper deposition and photoresist removal process for a circuit board comprises the following steps:
s1, bulking, namely bulking the base material by using a bulking liquid prepared by a bulking agent and sodium hydroxide under the ultrasonic condition, wherein the ultrasonic power is 80W, the bulking temperature is 85 ℃, the bulking time is 50S, and washing to obtain the bulked base material;
s2, removing the glue, namely, under the ultrasonic condition, using a glue removing liquid prepared by using a glue removing agent containing permanganate and sodium hydroxide to remove the glue from the bulked base material, wherein the ultrasonic power is 80W, the glue removing temperature is 90 ℃, the glue removing current is 1500A, the glue removing time is 120S, and washing with water to obtain the base material after glue removing treatment;
s3, pre-neutralizing, namely, pre-neutralizing the substrate subjected to the degumming treatment by using a neutralizing solution prepared from a neutralizing agent and sulfuric acid, wherein the pre-neutralizing temperature is room temperature, the pre-neutralizing time is 10S, and washing with water to obtain the substrate subjected to the pre-neutralizing treatment;
s4, neutralizing, namely neutralizing the substrate subjected to the pre-neutralization treatment by using a neutralization solution under the ultrasonic condition, wherein the ultrasonic power is 80W, the neutralization temperature is 51 ℃, and the neutralization time is 30S, and washing by water to obtain the neutralized substrate;
s5, cleaning, namely, under the ultrasonic condition, performing first cleaning treatment on the neutralized base material by using a conditioning solution prepared by adding water into a conditioning agent, wherein the ultrasonic power is 80W, the cleaning temperature is 55 ℃, the first cleaning time is 30S, and washing with water; under the ultrasonic condition, carrying out secondary cleaning treatment on the substrate after the primary cleaning by using a neutralization solution, washing with water to obtain the cleaned substrate, wherein the ultrasonic power is 80W, the cleaning temperature is 51 ℃, and the primary cleaning time is 20S;
s6, microetching, namely, carrying out microetching treatment on the cleaned base material by using a microetching solution prepared from sodium persulfate and sulfuric acid, wherein the microetching temperature is 32 ℃, the microetching time is 50S, and washing to obtain the microetched base material;
s7, activating, namely, pre-soaking the substrate before the activating step, and pre-soaking the substrate after the microetching treatment by using activating liquid prepared by an activating agent, wherein the pre-soaking temperature is room temperature, and the pre-soaking time is 10S; carrying out activation treatment on the pre-soaked base material by using an activation solution, washing with water at the activation temperature of 53 ℃ for 40S to obtain an activated base material;
s8, reducing, namely, reducing the activated base material by using a reducing solution prepared by a reducing agent at the reducing temperature of 37 ℃ for 35S, and washing to obtain the reduced base material;
and S9, depositing copper, immersing the reduced base material into horizontal copper deposition liquid for copper deposition, wherein the copper deposition temperature is 36 ℃, the pre-contact voltage is 2.5V, the copper deposition time is 180S, washing, air-drying through a hot air section and a cold air section respectively, and taking out the circuit board to obtain the circuit board.
In the present embodiment, a sodium hydroxide solution is added to the horizontal copper precipitation solution.
The samples obtained in the above examples 1 to 3 were all rated 10 in the backlight level test, and were not prone to defects such as plate explosion, delamination, white spots, and separation of inner layer copper.
The plating layer obtained by the horizontal copper deposition and photoresist removal process of the circuit board has excellent plating layer covering capacity, and the horizontal copper deposition and photoresist removal process can ensure that the inner layer copper and the hole copper have better bonding force, obtain an excellent and reliable chemical copper deposition layer, and can deposit good chemical copper layers for blind holes and through holes. In addition, the horizontal heavy copper of circuit board of this embodiment removes gluey technology, circuit board substrate carry out each processing step along conveyer belt horizontal transport, and degree of automation is high, and workman working strength is low, and horizontal transport also is convenient for seal the system, reduces the influence to all ring edge borders.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (7)
1. The horizontal copper deposition and photoresist removal process for the circuit board is characterized in that a circuit board substrate is horizontally conveyed along a conveying belt and sequentially subjected to the following processing steps:
bulking, namely bulking the base material by using a bulking liquid under the ultrasonic condition, wherein the ultrasonic power is 80-100W, the bulking temperature is 75-85 ℃, the bulking time is 50-80S, and washing to obtain the bulked base material;
removing glue, namely, under the ultrasonic condition, using a glue removing solution to perform glue removing treatment on the bulked base material, wherein the ultrasonic power is 80-100W, the glue removing temperature is 80-90 ℃, the glue removing current is 800-1500A, the glue removing time is 120-160S, and washing to obtain the base material after glue removing treatment;
pre-neutralizing, namely performing pre-neutralizing treatment on the substrate subjected to the degumming treatment by using a neutralizing solution, wherein the pre-neutralizing temperature is room temperature, and the pre-neutralizing time is 5-10S, and washing with water to obtain the substrate subjected to the pre-neutralizing treatment;
neutralizing, namely neutralizing the pre-neutralized base material by using a neutralizing liquid under the ultrasonic condition, wherein the ultrasonic power is 80-100W, the neutralizing temperature is 45-51 ℃, the neutralizing time is 30-40S, and washing with water to obtain the neutralized base material;
cleaning, namely, under the ultrasonic condition, performing first cleaning treatment on the neutralized base material by using an adjusting solution, washing with water, wherein the ultrasonic power is 80-100W, the cleaning temperature is 45-55 ℃, and the first cleaning time is 30-40S; under the ultrasonic condition, carrying out secondary cleaning treatment on the substrate after the primary cleaning by using a neutralization solution, washing with water to obtain the cleaned substrate, wherein the ultrasonic power is 80-100W, the cleaning temperature is 46-51 ℃, and the primary cleaning time is 20-30S;
microetching, namely performing microetching treatment on the cleaned base material by using microetching liquid, washing with water to obtain the microetched base material, wherein the microetching temperature is 28-32 ℃, and the microetching time is 50-60 seconds;
activating, namely, using an activating solution to perform activating treatment on the substrate after the microetching treatment, wherein the activating temperature is 47-53 ℃, the activating time is 40-50S, and washing with water to obtain the activated substrate;
reducing, namely, reducing the activated base material by using a reducing solution at the temperature of 33-37 ℃ for 35-45S, and washing with water to obtain the reduced base material;
and (3) copper deposition, namely immersing the reduced base material into horizontal copper deposition liquid for copper deposition, wherein the copper deposition temperature is 30-36 ℃, the pre-contact voltage is 2.5V, the copper deposition time is 180 plus 300S, and the circuit board is obtained by washing, air drying and board discharging.
2. The horizontal copper deposition and photoresist removal process for circuit board according to claim 1, wherein the substrate is pre-soaked before the activation step, the substrate after the microetching treatment is pre-soaked with an activation solution, the pre-soaking temperature is room temperature, the pre-soaking time is 10-20S, and the substrate after the pre-soaking treatment enters the activation step.
3. The horizontal copper deposition and photoresist removal process for circuit boards according to claim 1, wherein the horizontal copper deposition solution comprises:
85-115 parts of copper melting base agent, 7-11 parts of copper melting stabilizer, 45-55 parts of copper melting additive and 13-21 parts of copper melting reducing agent.
4. The horizontal copper deposition and photoresist removal process for the circuit board according to claim 3, wherein the horizontal copper deposition solution comprises 100 parts of copper chemical base agent, 9 parts of copper chemical stabilizer, 50 parts of copper chemical additive and 17 parts of copper chemical reducing agent.
5. The horizontal copper deposition and photoresist removal process for the circuit board according to claim 3 or 4, wherein the copper-dissolving basic agent, the copper-dissolving stabilizer, the copper-dissolving additive and the copper-dissolving reducing agent are sequentially added into pure water according to the parts by weight, and the mixture is heated to 30-36 ℃ to obtain the horizontal copper deposition solution.
6. The horizontal copper deposition and photoresist removal process for circuit boards according to claim 3 or 4, wherein the horizontal copper deposition solution comprises a sodium hydroxide solution.
7. The horizontal copper deposition and photoresist removal process for circuit boards according to claim 1, wherein the micro-etching solution comprises 80-120 parts of sodium persulfate and 15-40 parts of sulfuric acid.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114457326A (en) * | 2022-01-18 | 2022-05-10 | 广东利尔化学有限公司 | Copper-depositing double-microetching process applied to circuit board |
| CN114727507A (en) * | 2022-04-15 | 2022-07-08 | 苏州殷绿勒精密机械科技有限公司 | Glass substrate copper deposition process |
| CN115226324A (en) * | 2022-09-20 | 2022-10-21 | 广东科翔电子科技股份有限公司 | Mini-LED small-spacing COB product gold manufacturing method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152875A (en) * | 2014-08-25 | 2014-11-19 | 志超科技（遂宁）有限公司 | PCB-PTH (Printed Circuit Board-Plated Through Hole) line hole conditioning and activation ultrasonic device and method |
| CN105695964A (en) * | 2014-11-28 | 2016-06-22 | 重庆基石机械有限公司 | Copper deposition process |
| CN106413289A (en) * | 2016-11-21 | 2017-02-15 | 奥士康精密电路（惠州）有限公司 | Copper deposition method for preventing occurrence of copper-free hole |
| CN108697008A (en) * | 2018-07-27 | 2018-10-23 | 江西景旺精密电路有限公司 | It is a kind of to prevent electro-plating method of the high aspect ratio PCB aperture without copper |
| CN110453207A (en) * | 2019-08-30 | 2019-11-15 | 广州皓悦新材料科技有限公司 | A kind of horizontal chemical of printed wiring board sinks copper liquid and preparation method thereof |
| CN110499501A (en) * | 2019-10-08 | 2019-11-26 | 苏州天承化工有限公司 | A kind of chemical bronze plating liquid and preparation method thereof and blind hole processing method |
| CN110972412A (en) * | 2019-12-10 | 2020-04-07 | 荣晖电子(惠州)有限公司 | Novel PCB copper deposition process improvement method |
| CN113133225A (en) * | 2021-04-13 | 2021-07-16 | 广州皓悦新材料科技有限公司 | Horizontal copper deposition process for multilayer board and HDI board |
-
2021
- 2021-07-30 CN CN202110873839.6A patent/CN113652677A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152875A (en) * | 2014-08-25 | 2014-11-19 | 志超科技（遂宁）有限公司 | PCB-PTH (Printed Circuit Board-Plated Through Hole) line hole conditioning and activation ultrasonic device and method |
| CN105695964A (en) * | 2014-11-28 | 2016-06-22 | 重庆基石机械有限公司 | Copper deposition process |
| CN106413289A (en) * | 2016-11-21 | 2017-02-15 | 奥士康精密电路（惠州）有限公司 | Copper deposition method for preventing occurrence of copper-free hole |
| CN108697008A (en) * | 2018-07-27 | 2018-10-23 | 江西景旺精密电路有限公司 | It is a kind of to prevent electro-plating method of the high aspect ratio PCB aperture without copper |
| CN110453207A (en) * | 2019-08-30 | 2019-11-15 | 广州皓悦新材料科技有限公司 | A kind of horizontal chemical of printed wiring board sinks copper liquid and preparation method thereof |
| CN110499501A (en) * | 2019-10-08 | 2019-11-26 | 苏州天承化工有限公司 | A kind of chemical bronze plating liquid and preparation method thereof and blind hole processing method |
| CN110972412A (en) * | 2019-12-10 | 2020-04-07 | 荣晖电子(惠州)有限公司 | Novel PCB copper deposition process improvement method |
| CN113133225A (en) * | 2021-04-13 | 2021-07-16 | 广州皓悦新材料科技有限公司 | Horizontal copper deposition process for multilayer board and HDI board |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114457326A (en) * | 2022-01-18 | 2022-05-10 | 广东利尔化学有限公司 | Copper-depositing double-microetching process applied to circuit board |
| CN114727507A (en) * | 2022-04-15 | 2022-07-08 | 苏州殷绿勒精密机械科技有限公司 | Glass substrate copper deposition process |
| CN115226324A (en) * | 2022-09-20 | 2022-10-21 | 广东科翔电子科技股份有限公司 | Mini-LED small-spacing COB product gold manufacturing method |
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Application publication date: 20211116 |