CN113644201B - Organic solar cell based on triangular prism grating imprinting and preparation method thereof - Google Patents

Organic solar cell based on triangular prism grating imprinting and preparation method thereof Download PDF

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CN113644201B
CN113644201B CN202110899365.2A CN202110899365A CN113644201B CN 113644201 B CN113644201 B CN 113644201B CN 202110899365 A CN202110899365 A CN 202110899365A CN 113644201 B CN113644201 B CN 113644201B
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buffer layer
triangular prism
organic solar
solar cell
cathode
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CN113644201A (en
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于军胜
张大勇
王瑞
李嘉文
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University of Electronic Science and Technology of China
Qiantang Science and Technology Innovation Center
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Qiantang Science and Technology Innovation Center
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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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    • Y02E10/549—Organic PV cells

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Abstract

The invention discloses an organic solar cell based on triangular prism grating imprinting and a preparation method thereof, and belongs to the field of organic semiconductor thin film solar cells. The laminated organic solar cell provided by the invention adopts an inversion structure, and comprises a substrate, a transparent conductive cathode, a first anode buffer layer, a top cell active layer, a triangular prism grating type cathode buffer layer, a second anode buffer layer, a bottom cell active layer, a cathode buffer layer and a metal cathode from bottom to top in sequence; according to the triangular prism type grating nano imprinting process, triangular prism type cathode buffer layers are imprinted by selecting triangular prism type nano imprinting plates with different specifications, so that the triangular prism type grating nano imprinting process has special optical characteristics of triangular prism configuration, and the absorption of a laminated device to light waves with different wave bands is improved. The method effectively utilizes the different reflection effects of the triangular prism grating on the light waves with different wavelengths, and improves the overall device performance of the laminated device.

Description

Organic solar cell based on triangular prism grating imprinting and preparation method thereof
Technical Field
The invention belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin film solar cells, and relates to an organic solar cell based on triangular prism grating imprinting and a preparation method thereof.
Background
Organic solar cells have evolved rapidly in the last decade, benefiting from the advent of new electron donor and electron acceptor materials, and the deep exploration of research efforts in corresponding device engineering, interface engineering, etc. Among them, the energy conversion efficiency of the organic solar cell device having fullerene derivative acceptor has reached more than 13%, while the performance of the organic solar cell device based on non-fullerene acceptor has exceeded 17%. However, there is still a need for further improvement in current organic solar cells compared to other photovoltaic technologies (e.g., silicon-based, gaAs, perovskite, etc.), where the narrow light absorption range of organic materials and the small output voltage (< 1V) of organic solar cell devices are two important issues that are currently in urgent need of solution in the organic photovoltaic field. Based on this, a stacked organic solar cell in which two or more subcells are stacked in series is considered as an important research direction in which the above-described problems can be effectively solved. For the series laminated organic solar cell in the traditional research, the sub-cells can respectively select active layer materials of different systems so as to widen the optical absorption width of the device, ensure the effective absorption of the organic solar cell device to light waves of different wave bands, and secondly, the total open-circuit voltage of the laminated cell is the sum of the open-circuit voltages of the two sub-cells (> 1.5V) assuming that no energy is lost in the middle insertion layer in theory, so that the preparation of the high-efficiency low-loss laminated organic solar cell is a serious commercial application of the organic photovoltaic device.
Although stacked organic solar energy has conditions conducive to commercialization of organic photovoltaics, there are some problems that need to be resolved. Firstly, the intrinsic characteristic of the series laminated battery is that the output current value takes the minimum value in the sub-battery, namely, a proper active layer system is required to be selected, so that the balance of short-circuit current among multiple sub-batteries is ensured, and the maximum current output is realized. Secondly, the stacked battery has complex interface contact condition due to stacking of different functional layers, and is easy to cause extra energy loss due to poor interface contact, so that the output voltage of the device cannot be maximized. Finally, the device can be stacked as soon as possible to widen the absorption of the whole device, but the energy loss is easy to occur because the intensity of the organic material itself for absorbing the light waves is insufficient, so that the energy conversion cannot be optimized. Therefore, research on how to improve the internal structure of the stacked organic solar cell device, so as to optimize the internal interface contact and the optical absorption characteristics of different sub-cells, and improvement of the effective output of the tandem stacked organic solar cell device is one of the key points and difficulties in realizing commercialization of stacked organic solar cells at present.
Disclosure of Invention
The invention aims at: the invention provides an organic solar cell based on triangular prism grating imprinting and a preparation method thereof, which aim to solve the problems of low separation, transmission and interfacial transfer efficiency of photo-generated carriers and finally reduced device performance caused by poor phase separation of an active layer in a bulk heterojunction organic solar cell device, and simultaneously eliminate negative effects on active layer compatibility and device performance caused by using an orthogonal solvent in a traditional continuous wet deposition process.
The technical scheme adopted by the invention is as follows:
the laminated organic solar cell based on triangular prism grating nanoimprint adopts an inverse structure, and comprises a substrate, a transparent conductive cathode, a first anode buffer layer, a top cell active layer, a triangular prism grating type cathode buffer layer, a second anode buffer layer, a bottom cell active layer, a cathode buffer layer and a metal cathode from bottom to top in sequence;
wherein, triangular prism grating type cathode buffer layer uses triangular prism type nanometer impression plate to carry out impression treatment.
The triangular prism grating type cathode buffer layer has special optical characteristics of triangular prism configuration so as to improve the absorption of the laminated device to light waves in different wave bands. The method effectively utilizes different reflection effects of the triangular prism grating on light waves with different wavelengths, fully reflects the short-wavelength light segment back to the top cell active layer, transmits the long-wavelength light segment to the bottom cell active layer, realizes selective absorption of the light waves by different active layers, and effectively improves the overall device performance of the laminated device.
Further, the top cell photoactive layer is composed of an electron donor material PBDB-T and an electron acceptor material PC 71 The BM mixed solution is prepared, the bottom cell photoactive layer is prepared from a mixed solution of an electron donor material D18 and an electron acceptor material BTP-eC9, and the thickness range is 60-200 nm, 100-300 nm; in the mixed solutionThe mass percentage of the electron donor and the acceptor is 1:6-6:1, and the concentration of the mixed solution is 10-30 mg/ml.
Further, the materials of the first anode buffer layer and the second anode buffer layer are PEDOT PSS, and the thickness range is 30-60 nm.
Further, the material of the triangular prism grating type cathode buffer layer is ZnO NPs, and the thickness range is 40-80 nm; the cathode buffer layer is made of LiF and has a thickness ranging from 10 nm to 30nm.
Further, the metal cathode material is one or more of Ag, al or Au, and the thickness of the thin layer ranges from 100nm to 200nm; the substrate material is glass or transparent polymer, and the transparent polymer material is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate copolymer or polyacrylic acid.
Further, the area of the laminated organic solar cell is 0.49-1 cm 2 。
A preparation method of a laminated organic solar cell comprises the following steps:
step 1: cleaning a substrate consisting of a transparent substrate and a transparent conductive cathode ITO, and drying with nitrogen after cleaning;
step 2: spin coating, printing or spraying anode buffer layer PEDOT: PSS precursor solution on the surface of transparent conductive cathode ITO, and performing thermal annealing;
step 3: PBDB-T: PC 71 After the BM solution is coated on the center of the PEDOT PSS anode buffer layer, preparing a top cell active layer by using a spin coating process, and annealing;
step 4: after ZnO NPs dispersed liquid drops are coated on the center of the top cell active layer, a spin coating process is used for preparing a ZnO NPs cathode buffer layer, and annealing is carried out;
step 5: embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
step 6: after a PEDOT PSS precursor solution is coated on a ZnO NPs cathode buffer layer, preparing the PEDOT PSS anode buffer layer by using a spin coating process, and annealing;
step 7: coating the center of a PEDOT-PSS anode buffer layer with a D18:BTP-eC9 solution drop, preparing a bottom cell active layer by using a spin coating process, and annealing;
step 8: at a vacuum level of 3 x 10 -3 Evaporating LiF on the surface of the photoactive layer under the Pa condition to prepare a cathode buffer layer;
step 9: at a vacuum level of 3 x 10 -4 And evaporating a metal cathode under the Pa condition.
Further, the single prism width range of the triangular prism-shaped nano-imprint board is 0.3-10 mu m, and the height range is 20-60 nm.
Further, the thermal annealing and low-temperature baking modes adopt one or more of hot table heating, oven heating, far infrared heating and hot air heating.
In summary, due to the adoption of the technical scheme, the beneficial effects of the invention are as follows:
1. selected classical fullerene-based PBDB-T: PC 71 BM system (absorption range: 300-650 nm) and novel non-fullerene D18:BTP-eC9 (absorption range: 500-1000 nm) system have complementary absorption spectra, can effectively utilize 300-1000 nm wave band light wave, and theoretically ensures effective improvement of device output current.
2. The ZnO NPs cathode buffer layer is selected and the triangular prism-shaped grating configuration is prepared, so that the interface contact between the bottom and top batteries can be well matched, the extra loss of the internal energy of the laminated device during the transmission between the interfaces can be effectively reduced, the device can maximize the output voltage, and the performance of the device is further improved.
3. The triangular prism type grating has the characteristic of selectively transmitting light waves in different wavebands, and as shown by the intrinsic characteristics, when the wavelength of the light waves is far smaller than the size of the triangular prism type grating, the short-wavelength light waves can be totally reflected, most of the short-wavelength light waves are reflected back, and the long-wavelength light waves can enter the next layer as far as possible through the grating, so that the structure effectively ensures the full absorption of different active layers to respective corresponding light waves, and further improves the short-circuit current of the device.
Drawings
For a clearer description of the technical solutions of embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered limiting in scope, and other related drawings can be obtained according to these drawings without inventive effort for a person skilled in the art, wherein:
FIG. 1 is a schematic view of the structure and light wave propagation path of a laminated organic solar cell of the present invention.
The reference numerals in the drawings are: 1-substrate, 2-transparent conductive anode, 3-first anode buffer layer, 4-top cell active layer, 5-triangular prism grating cathode buffer layer, 6-second anode buffer layer, 7-bottom cell active layer, 8-cathode buffer layer, 9-metal cathode, 10-short wavelength light segment, 11-long wavelength light segment.
Detailed Description
The invention will be further described with reference to the accompanying drawings and examples.
As shown in fig. 1: the laminated organic solar cell adopts an inverse structure, and comprises a substrate 1, a transparent conductive cathode 2, a first anode buffer layer 3, a top cell active layer 4, a triangular prism grating type cathode buffer layer 5, a second anode buffer layer 6, a bottom cell active layer 7, a cathode buffer layer 8 and a metal cathode 9 from bottom to top in sequence;
wherein the substrate 1 can be a transparent substrate, the transparent conductive cathode 2 can be transparent conductive cathode ITO, the first anode buffer layer 3 and the second anode buffer layer 6 can be PEDOT: PSS anode buffer layers, the triangular prism grating type cathode buffer layer 5 can be a triangular prism grating type ZnO NPs cathode buffer layer, and the cathode buffer layer 8 can be a LiF cathode buffer layer. The short-wavelength light segment 10 is represented by three groups of solid lines, and after the short-wavelength light segment 10 enters the cell, the short-wavelength light segment is reflected by the triangular prism grating type cathode buffer layer, and the two groups of short solid lines are reflected light waves and are reflected to the top cell active layer 4; the long-wavelength light segment 11 is represented by three groups of broken lines, and after entering the cell, the long-wavelength light segment 11 is reflected by the triangular prism grating cathode buffer layer, and the two groups of short broken lines are reflected light waves and are reflected to the bottom cell active layer 7.
Example 1 (control):
1. cleaning a substrate with surface roughness less than 1nm, which consists of a transparent substrate and a transparent conductive cathode ITO, and drying the substrate by nitrogen after cleaning;
2. spin-coating PEDOT: PSS (3000 rpm,60s,40 nm) on the transparent conductive cathode ITO surface to prepare an anode buffer layer, and subjecting the formed film to thermal annealing treatment (150 ℃ C., 1 h);
3. PBDB-T: PC 71 After the BM solution was coated on the center of the PEDOT: PSS anode buffer layer, a spin coating process was used to prepare a top cell active layer 4 (2000 rpm,60s,80 nm) and annealed (100 ℃ C., 30 min);
4. after the ZnO NPs dispersion droplets were coated on the center of the top cell active layer 4, a ZnO NPs cathode buffer layer (3000 rpm,40s,50 nm) was prepared using a spin coating process, and annealed;
5. after the PEDOT-PSS precursor solution is coated on the ZnO NPs cathode buffer layer, a spin coating process is used for preparing the PEDOT-PSS anode buffer layer (3000 rpm,60s,40 nm), and annealing (150 ℃ C., 1 h) is carried out;
6. after d18:btp-eC9 solution was dropped onto the center of the pedot:pss anode buffer layer, bottom cell active layer 7 (5000 rpm,40s,80 nm) was prepared using spin coating process, and annealed (100 ℃,9 min);
7. evaporating a cathode buffer layer LiF (8 nm) on the photoactive layer;
8. evaporating a metal cathode 9Ag (100 nm) on the anode buffer layer;
9. under standard test conditions: AM 1.5,100mW/cm 2 The open circuit voltage (V) OC ) =1.62v, short-circuit current (J SC )＝10.32mA/cm 2 Fill Factor (FF) =0.70, photoelectric Conversion Efficiency (PCE) =11.70%.
Example 2:
1. cleaning a substrate with surface roughness less than 1nm, which consists of a transparent substrate and a transparent conductive cathode ITO, and drying the substrate by nitrogen after cleaning;
2. spin-coating PEDOT: PSS (3000 rpm,60s,40 nm) on the transparent conductive cathode ITO surface to prepare an anode buffer layer, and subjecting the formed film to thermal annealing treatment (150 ℃ C., 1 h);
3. PBDB-T: PC 71 After the BM solution was coated on the center of the PEDOT: PSS anode buffer layer, a spin coating process was used to prepare a top cell active layer 4 (2000 rpm,60s,80 nm) and annealed (100 ℃ C., 30 min);
4. after the ZnO NPs dispersion droplets were coated on the center of the top cell active layer 4, a ZnO NPs cathode buffer layer (3000 rpm,40s,50 nm) was prepared using a spin coating process, and annealed;
5. embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate (width: 0.3um, height: 30 nm) to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
6. after the PEDOT-PSS precursor solution is coated on the ZnO NPs cathode buffer layer, a spin coating process is used for preparing the PEDOT-PSS anode buffer layer (3000 rpm,60s,40 nm), and annealing (150 ℃ C., 1 h) is carried out;
7. after d18:btp-eC9 solution was dropped onto the center of the pedot:pss anode buffer layer, bottom cell active layer 7 (5000 rpm,40s,80 nm) was prepared using spin coating process, and annealed (100 ℃,9 min);
8. evaporating a cathode buffer layer LiF (8 nm) on the photoactive layer;
9. evaporating a metal cathode 9Ag (100 nm) on the anode buffer layer;
10. under standard test conditions: AM 1.5,100mW/cm 2 The open circuit voltage (V) OC ) =1.71V, short-circuit current (J SC )＝12.11mA/cm 2 Fill Factor (FF) =0.71, photoelectric Conversion Efficiency (PCE) =14.70%.
Example 3:
1. cleaning a substrate with surface roughness less than 1nm, which consists of a transparent substrate and a transparent conductive cathode ITO, and drying the substrate by nitrogen after cleaning;
2. spin-coating PEDOT: PSS (3000 rpm,60s,40 nm) on the transparent conductive cathode ITO surface to prepare an anode buffer layer, and subjecting the formed film to thermal annealing treatment (150 ℃ C., 1 h);
3. PBDB-T: PC 71 After the BM solution was coated on the center of the PEDOT: PSS anode buffer layer, a spin coating process was used to prepare a top cell active layer 4 (2000 rpm,60s,80 nm) and annealed (100 ℃ C., 30 min);
4. after the ZnO NPs dispersion droplets were coated on the center of the top cell active layer 4, a ZnO NPs cathode buffer layer (3000 rpm,40s,50 nm) was prepared using a spin coating process, and annealed;
5. embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate (width: 1um, height: 50 nm) to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
6. after the PEDOT-PSS precursor solution is coated on the ZnO NPs cathode buffer layer, a spin coating process is used for preparing the PEDOT-PSS anode buffer layer (3000 rpm,60s,40 nm), and annealing (150 ℃ C., 1 h) is carried out;
7. after d18:btp-eC9 solution was dropped onto the center of the pedot:pss anode buffer layer, bottom cell active layer 7 (5000 rpm,40s,80 nm) was prepared using spin coating process, and annealed (100 ℃,9 min);
8. evaporating a cathode buffer layer LiF (8 nm) on the photoactive layer;
9. evaporating a metal cathode 9Ag (100 nm) on the anode buffer layer;
10. under standard test conditions: AM 1.5,100mW/cm 2 The open circuit voltage (V) OC ) =1.78v, short-circuit current (J SC )＝14.35mA/cm 2 Fill Factor (FF) =0.73, photoelectric Conversion Efficiency (PCE) =18.64%.
Example 4:
1. cleaning a substrate with surface roughness less than 1nm, which consists of a transparent substrate and a transparent conductive cathode ITO, and drying the substrate by nitrogen after cleaning;
2. spin-coating PEDOT: PSS (3000 rpm,60s,40 nm) on the transparent conductive cathode ITO surface to prepare an anode buffer layer, and subjecting the formed film to thermal annealing treatment (150 ℃ C., 1 h);
3. PBDB-T: PC 71 After the BM solution was dropped onto the center of the PEDOT: PSS anode buffer layer, a spin coating process was used to prepare the top cell active layer 4 (2000 rpm,60s,80 nm) and annealing was performedFire (100deg.C, 30 min);
4. after the ZnO NPs dispersion droplets were coated on the center of the top cell active layer 4, a ZnO NPs cathode buffer layer (3000 rpm,40s,50 nm) was prepared using a spin coating process, and annealed;
5. embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate (width: 10um, height: 60 nm) to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
6. after the PEDOT-PSS precursor solution is coated on the ZnO NPs cathode buffer layer, a spin coating process is used for preparing the PEDOT-PSS anode buffer layer (3000 rpm,60s,40 nm), and annealing (150 ℃ C., 1 h) is carried out;
7. after d18:btp-eC9 solution was dropped onto the center of the pedot:pss anode buffer layer, bottom cell active layer 7 (5000 rpm,40s,80 nm) was prepared using spin coating process, and annealed (100 ℃,9 min);
8. evaporating a cathode buffer layer LiF (8 nm) on the photoactive layer;
9. evaporating a metal cathode 9Ag (100 nm) on the anode buffer layer;
10. under standard test conditions: AM 1.5,100mW/cm 2 The open circuit voltage (V) OC ) =1.69V, short-circuit current (J SC )＝13.21mA/cm 2 Fill Factor (FF) =0.71, photoelectric Conversion Efficiency (PCE) =15.85%.
Example 5:
1. cleaning a substrate with surface roughness less than 1nm, which consists of a transparent substrate and a transparent conductive cathode ITO, and drying the substrate by nitrogen after cleaning;
2. spin-coating PEDOT: PSS (3000 rpm,60s,40 nm) on the transparent conductive cathode ITO surface to prepare an anode buffer layer, and subjecting the formed film to thermal annealing treatment (150 ℃ C., 1 h);
3. PBDB-T: PC 71 After the BM solution was coated on the center of the PEDOT: PSS anode buffer layer, a spin coating process was used to prepare a top cell active layer 4 (2000 rpm,60s,80 nm) and annealed (100 ℃ C., 30 min);
4. after the ZnO NPs dispersion droplets were coated on the center of the top cell active layer 4, a ZnO NPs cathode buffer layer (3000 rpm,40s,50 nm) was prepared using a spin coating process, and annealed;
5. embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate (width: 1um, height: 30 nm) to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
6. after the PEDOT-PSS precursor solution is coated on the ZnO NPs cathode buffer layer, a spin coating process is used for preparing the PEDOT-PSS anode buffer layer (3000 rpm,60s,40 nm), and annealing (150 ℃ C., 1 h) is carried out;
7. after d18:btp-eC9 solution was dropped onto the center of the pedot:pss anode buffer layer, bottom cell active layer 7 (5000 rpm,40s,80 nm) was prepared using spin coating process, and annealed (100 ℃,9 min);
8. evaporating a cathode buffer layer LiF (8 nm) on the photoactive layer;
9. evaporating a metal cathode 9Ag (100 nm) on the anode buffer layer;
10. under standard test conditions: AM 1.5,100mW/cm 2 The open circuit voltage (V) OC ) =1.7v, short-circuit current (J SC )＝13.74mA/cm 2 Fill Factor (FF) =0.72, photoelectric Conversion Efficiency (PCE) =17.41%.
It can be seen that: compared with an organic solar cell prepared without treatment (namely, the organic solar cell prepared in example 1), the laminated organic solar cell prepared by introducing the triangular prism-shaped grating nano-imprinting method (namely, the organic solar cells prepared in examples 2-5) has obviously improved Jsc, FF and Voc three characteristic parameters. This is due to the mutually compatible optical absorption properties of the two different active layer systems;
furthermore, the triangular prism-shaped grating structure effectively carries out selective treatment on incident light waves, light waves in a short wavelength band 10 are reflected back to the top cell active layer 4 as much as possible, and light waves in a long wavelength band 11 directly penetrate into the bottom cell active layer 7, so that the high output current characteristic of the series laminated cell is guaranteed by combining the triangular prism-shaped grating structure with the ZnO NPs, on the other hand, the interface contact characteristic between the bottom cell and the top cell is effectively improved, the energy loss caused by the mismatching of the contact of the multi-layer functional films is reduced, and meanwhile, better interface contact means more proper interfacial charge transmission characteristic. Through the optimization of different characteristics, the performance of the series laminated organic solar cell is finally improved to 18.64%, the practical guarantee of the performance aspect is provided for the commercialization of the organic solar cell device, and the further development of the organic photovoltaic industry is facilitated.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and modifications within the spirit and principles of the invention will become apparent to those skilled in the art.

Claims (8)

1. A laminated organic solar cell based on triangular prism grating nanoimprint is characterized in that: the laminated organic solar cell comprises a substrate, a transparent conductive anode, a first anode buffer layer, a top cell active layer, a triangular prism grating type cathode buffer layer, a second anode buffer layer, a bottom cell active layer, a cathode buffer layer and a metal cathode from bottom to top in sequence;
wherein, the triangular prism grating type cathode buffer layer is subjected to imprinting treatment by using a triangular prism type nano imprinting plate;
the triangular prism grating type cathode buffer layer utilizes different reflection effects of the triangular prism grating on light waves with different wavelengths to fully reflect the short wavelength light segment back to the top cell active layer and transmit the long wavelength light segment to the bottom cell active layer.
2. The laminated organic solar cell based on triangular prism grating nanoimprint as claimed in claim 1, wherein: the top cell photoactive layer is composed of an electron donor material PBDB-T and an electron acceptor material PC 71 The BM is prepared from a mixed solution, and the thickness of the photoactive layer of the top battery is in the range of 60-200 nm; the bottom cell photoactive layer is prepared from a mixed solution of an electron donor material D18 and an electron acceptor material BTP-eC9, and the thickness range of the bottom cell photoactive layer is 100-300 nm; electrons in the mixed solutionThe mass percentage of the donor material and the electron acceptor material is 1:6-6:1, and the concentration of the mixed solution is 10-30 mg/ml.
3. The laminated organic solar cell based on triangular prism grating nanoimprint as claimed in claim 1, wherein: the materials of the first anode buffer layer and the second anode buffer layer are PEDOT and PSS, and the thickness ranges from 30nm to 60nm.
4. The laminated organic solar cell based on triangular prism grating nanoimprint as claimed in claim 1, wherein: the material of the triangular prism grating type cathode buffer layer is ZnO NPs, and the thickness range is 40-80 nm; the cathode buffer layer is made of LiF and has a thickness ranging from 10 nm to 30nm.
5. The laminated organic solar cell based on triangular prism grating nanoimprint as claimed in claim 1, wherein: the metal cathode material is one or more of Ag, al or Au, and the thickness of the thin layer ranges from 100nm to 200nm; the substrate material is glass or transparent polymer, and the transparent polymer material is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate copolymer or polyacrylic acid.
6. The laminated organic solar cell based on triangular prism grating nanoimprint as claimed in claim 1, wherein: the area of the laminated organic solar cell is 0.49-1 cm 2 。
7. A preparation method of a laminated organic solar cell is characterized by comprising the following steps: a laminated organic solar cell comprising the triangular prism grating nanoimprint-based laminated organic solar cell of any one of claims 1-6, the preparation process of the laminated organic solar cell comprising the steps of:
step 1: cleaning a substrate consisting of a transparent substrate and a transparent conductive anode ITO, and drying with nitrogen after cleaning;
step 2: spin coating, printing or spraying anode buffer layer PEDOT: PSS precursor solution on the surface of transparent conductive anode ITO, and performing thermal annealing;
step 3: PBDB-T: PC 71 After the BM solution is coated on the center of the PEDOT PSS anode buffer layer, preparing a top cell active layer by using a spin coating process, and annealing;
step 4: after ZnO NPs dispersed liquid drops are coated on the center of the top cell active layer, a spin coating process is used for preparing a ZnO NPs cathode buffer layer, and annealing is carried out;
step 5: embossing the ZnO NPs cathode buffer layer by using a triangular prism-shaped nano embossing plate to prepare the ZnO NPs cathode buffer layer with triangular prism-shaped grating characteristics;
step 6: after a PEDOT PSS precursor solution is coated on a ZnO NPs cathode buffer layer, preparing the PEDOT PSS anode buffer layer by using a spin coating process, and annealing;
step 7: coating the center of a PEDOT-PSS anode buffer layer with a D18:BTP-eC9 solution drop, preparing a bottom cell active layer by using a spin coating process, and annealing;
step 8: at a vacuum level of 3 x 10 -3 Evaporating LiF on the surface of the photoactive layer under the Pa condition to prepare a cathode buffer layer;
step 9: at a vacuum level of 3 x 10 -4 And evaporating a metal cathode under the Pa condition.
8. The method for manufacturing a stacked organic solar cell according to claim 7, wherein: the triangular prism-shaped nano-imprint board has a single prism width range of 0.3-10 mu m and a height range of 20-60 nm.
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