CN113630110A - Heavy current switch device - Google Patents

Heavy current switch device Download PDF

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Publication number
CN113630110A
CN113630110A CN202110917867.3A CN202110917867A CN113630110A CN 113630110 A CN113630110 A CN 113630110A CN 202110917867 A CN202110917867 A CN 202110917867A CN 113630110 A CN113630110 A CN 113630110A
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CN
China
Prior art keywords
module
power supply
switching device
current
switch
Prior art date
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Pending
Application number
CN202110917867.3A
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Chinese (zh)
Inventor
柴俊标
卜建明
历国伟
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Hangzhou Zhong An Electronics Co ltd
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Hangzhou Zhong An Electronics Co ltd
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Priority to CN202110917867.3A priority Critical patent/CN113630110A/en
Publication of CN113630110A publication Critical patent/CN113630110A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Abstract

The invention relates to a switch device, and discloses a high-current switch device, which comprises a power supply input port, a power supply output port, a driving module and a power switch module, wherein the power supply input port is connected with the power supply output port; the power supply input port and the power supply output port are both connected with a power supply interface joint; the power supply input port is connected with the driving module through the power supply interface joint; the power switch modules are connected with the driving modules in a one-to-one correspondence mode and used for controlling the driving modules. By adopting the modular parallel technology and the internal current sharing technology, the invention realizes the mass production of the high-current switch device and improves the delivery capacity of the product; meanwhile, when the high-current switching device module is maintained, only a certain broken high-current switching device is replaced, so that the maintenance cost is reduced.

Description

Heavy current switch device
Technical Field
The invention relates to a switching device, in particular to a high-current switching device.
Background
With the development of the 5G industry and artificial intelligence, the IGBT module plays an important role. In the new energy automobile industry, an IGBT module is a core component of an electric automobile and a charging pile; in the national power grid industry, the IGBT is widely applied to wind power generation, photovoltaic power generation, transformer substations and the like; in the rail transit industry, the IGBT module is mainly applied to high-speed rails and subways.
With the blockade of foreign technologies and products and the national targets of carbon peak reaching and carbon neutralization and long-range vision, the national large fund invests huge funds to carry out the domestic research and development and application of the IGBT module. In order to improve and assess the quality of the IGBT module, various tests and verifications must be performed on it. One of them is the power cycle test of the IGBT. In the power cycle test, direct current large current must be quickly turned on and off, junction temperature test is carried out at a sufficiently high speed, thermal impedance of each layer of the IGBT module is analyzed by applying a structural function model, and designers are assisted to improve the design, manufacture, production and packaging processes of the IGBT module.
In the prior art, a circuit for rapidly turning on and off a large current is realized mainly by using a silicon controlled rectifier or an insulated gate bipolar transistor, and the circuit has the following defects: when the thyristor or the igbt is used for conduction, the tube voltage drop is large, and large heat loss occurs. On one hand, the waste of energy is increased, and on the other hand, the junction temperature of the controlled silicon or the insulated gate bipolar transistor is increased, so that the reliability is reduced;
because the power consumption of the switch power tube is large, the heat dissipation mode adopts water cooling, condensation and water leakage risks exist, and certain reliability hidden danger is brought to equipment lines.
The junction capacitance of the silicon controlled rectifier or the insulated gate bipolar transistor is large, the switching frequency of the silicon controlled rectifier or the insulated gate bipolar transistor is determined to be slow, and the requirement of testing equipment on high-current high-speed switching cannot be met.
For example, the patent name, a multi-way high voltage high current thyristor switching device; patent application No.: CN 200410027180.9; the application date is: 2004-05-13; the patent states a multichannel high pressure heavy current silicon controlled rectifier switching device and includes the CPU singlechip, power drive circuit, and heavy current pulse forms the circuit, a plurality of trigger circuit and a plurality of silicon controlled rectifier, and an delivery outlet of CPU singlechip connects the input of heavy current pulse formation circuit through power drive circuit, and the output termination of heavy current pulse formation circuit a plurality of positive poles of a plurality of silicon controlled rectifiers, a plurality of corresponding negative poles of a plurality of silicon controlled rectifiers connect a plurality of outputs that correspond respectively, a plurality of trigger circuit connect respectively between a plurality of delivery outlets and a plurality of corresponding control levels of silicon controlled rectifier that the CPU singlechip is corresponding. Output port expanding circuits can be connected between the plurality of trigger circuits and the plurality of output ports corresponding to the CPU singlechip.
Disclosure of Invention
The invention provides a high-current switching device aiming at the defects that the energy waste of the high-current switching device in the prior art is increased, and the reliability of the high-current switching device is reduced through the junction temperature of a silicon controlled rectifier or an insulated gate bipolar transistor.
In order to solve the technical problem, the invention is solved by the following technical scheme:
a high-current switch device comprises a power supply input port, a power supply output port, a driving module and a power switch module; the power supply input port and the power supply output port are both connected with a power supply interface joint; the power supply input port is connected with the driving module through the power supply interface joint; the power switch modules are connected with the driving modules in a one-to-one correspondence mode and used for controlling the driving modules.
By adopting the modularized parallel connection technology and the internal current sharing technology, the mass production of the high-current switch device is realized, and the delivery capacity of the product is improved. Meanwhile, when the high-current switching device module is maintained, only a certain broken high-current switching device can be replaced, and the maintenance cost is reduced.
Preferably, the power switch module further comprises a fixed heat dissipation module, and the fixed heat dissipation module is connected with the power switch module and used for dissipating heat of the driving module. The heat dissipation capability of the current switching device can be increased through the heat dissipation module.
Preferably, the power supply input port comprises a TTL input interface, an optical fiber input conversion interface and a large current input interface; the power supply output port comprises an optical fiber output conversion interface and a large current output interface. The general TTL interface eliminates the interference of a high-speed heavy-current switching device on a control panel after the conversion of the internal optical fiber, and improves the stability of the heavy-current switching device
Preferably, the driving module comprises a driving control module; the drive control module is connected with a current limiting module and a quick discharging module; when the power switch is turned on, current passes through the limited current module; when the power switch is closed, discharging is performed through the quick discharging module.
Preferably, the power switch module comprises a MOS transistor, and the MOS transistor is a low-conduction high-withstand voltage MOS transistor.
Preferably, the heat dissipation module comprises a switch tube fixing block, a radiator and a fan; the switch tube fixing block is connected with the power switch module and is connected with the radiator through heat-conducting glue; the fan is located on one side of the switch device. Adopt fan cooling, improve switching device's suitability, reduce the water leakage risk simultaneously.
Preferably, the optical fiber input conversion interface comprises an optical fiber transmitting module and an optical fiber receiving module; the optical fiber transmitting module transmits optical signals to the optical fiber receiving module.
Preferably, the optical fiber receiving module is connected with a photoelectric conversion module; the photoelectric conversion module is used for converting the optical signal into an electric signal and transmitting the electric signal to the driving module.
Preferably, the power supply interface connector is a high-current power supply interface connector.
Due to the adoption of the technical scheme, the invention has the remarkable technical effects that:
the switching tubes adopted by the invention are low internal resistance MOS tubes, and each MOS tube is provided with an independent driving module, so that the switching speed is increased by 10 times compared with the original IGBT switching tube;
the external interface adopted by the invention is a general TTL interface, but after the internal optical fiber is converted, the interference of a high-speed heavy-current switch module is avoided, and the stability of the system is improved;
the invention adopts the fan for cooling, thus improving the applicability of the module and reducing the water leakage risk;
the invention adopts the modularized parallel technology and the internal current sharing technology, realizes the mass production of the high-current switch device and improves the delivery capacity of the product. Meanwhile, when the high-current switching device module is maintained, only a certain broken high-current switching device can be replaced, and the maintenance cost is reduced.
Drawings
Fig. 1 is a diagram of a protection circuit of the present invention.
Fig. 2 is a circuit diagram of a single driver module and switch module of the present invention.
Fig. 3 is a circuit diagram of an optical communication module according to the present invention.
Fig. 4 is a diagram of a drive module array of the present invention.
Fig. 5 is a circuit diagram of the power interface connector of the present invention.
Detailed Description
The invention will be described in further detail with reference to the accompanying fig. 1-5 and the examples.
Example 1
A high-current switch device comprises a power supply input port, a power supply output port, a driving module and a power switch module; the power supply input port and the power supply output port are both connected with a power supply interface joint; the power supply input port is connected with the driving module through the power supply interface joint; the power switch modules are connected with the driving modules in a one-to-one correspondence mode and used for controlling the driving modules. By adopting the modular parallel technology and the internal current sharing technology, the invention realizes the mass production of the high-current switch device and improves the delivery capacity of the product. Meanwhile, when the high-current switching device module is maintained, only a certain broken high-current switching device can be replaced, and the maintenance cost is reduced. The power supply input port comprises a TTL input interface, an optical fiber input conversion interface and a large current input interface; the power supply output port comprises an optical fiber output conversion interface and a large current output interface. The general TTL interface stops the interference of a high-speed heavy-current switching device to a control panel after the conversion of the internal optical fiber, and improves the stability of the heavy-current switching device.
The driving module comprises a driving control module; the drive control module is connected with a current limiting module and a quick discharging module; when the power switch is turned on, current passes through the limited current module; when the power switch is closed, discharging is performed through the quick discharging module.
Example 2
On the basis of embodiment 1, this embodiment further includes a fixed heat dissipation module, and the fixed heat dissipation module is connected with the power switch module and is used for dissipating heat of the driving module. The heat dissipation capability of the current switching device can be increased through the heat dissipation module.
The power switch module comprises an MOS (metal oxide semiconductor) tube, and the MOS tube is a low-conduction high-voltage-resistant MOS tube.
The heat dissipation module comprises a switch tube fixing block, a radiator and a fan; the switch tube fixing block is connected with the power switch module and is connected with the radiator through heat-conducting glue; the fan is located on one side of the switch device. Adopt fan cooling, improve switching device's suitability, reduce the water leakage risk simultaneously.
The optical fiber input conversion interface comprises an optical fiber transmitting module and an optical fiber receiving module; the optical fiber transmitting module transmits optical signals to the optical fiber receiving module.
The optical fiber receiving module is connected with a photoelectric conversion module; the photoelectric conversion module is used for converting the optical signal into an electric signal and transmitting the electric signal to the driving module. The power supply interface joint is a high-current power supply interface joint.
Example 3
On the basis of the above embodiments, the present embodiment drives the dual high-speed power MOSFET driver adopted by the control module; the interface OUTA is connected with a diode D2 quick discharge module, and a diode D2 quick discharge module is connected with a current limiting resistor R4; when the power switch Q1 is turned on, current flows through the current limiting resistor R4; when the power switch Q1 is turned off, the current is rapidly discharged through the diode D2; the high-current switch is favorable for being quickly turned off. The interface OUTB of the high-speed discharging circuit is connected with a diode D3 quick discharging module, and a diode D3 quick discharging module is connected with a current-limiting resistor R5; when the power switch Q2 is turned on, current flows through the current limiting resistor R5; when the power switch Q2 is turned off, the current is rapidly discharged through the diode D3; the high-current switch is favorable for being quickly turned off.
Example 4
On the basis of the above embodiment, the power supply interface connector of the present embodiment is a high-current power supply interface connector; the large-current power supply interface joint is a copper bar.

Claims (9)

1. A high-current switch device is characterized by comprising a power supply input port, a power supply output port, a driving module and a power switch module; the power supply input port and the power supply output port are both connected with a power supply interface joint; the power supply input port is connected with the driving module through the power supply interface joint; the power switch modules are connected with the driving modules in a one-to-one correspondence mode and used for controlling the driving modules.
2. The high current switching device according to claim 1, further comprising a fixed heat dissipation module, wherein the fixed heat dissipation module is connected to the power switching module for dissipating heat of the driving module.
3. The high current switching device of claim 1, wherein said power input port comprises a TTL input interface, a fiber input conversion interface and a high current input interface; the power supply output port comprises an optical fiber output conversion interface and a large current output interface.
4. A high current switching device according to claim 1, wherein said driving module comprises a driving control module; the drive control module is connected with a current limiting module and a quick discharging module; when the power switch is turned on, current passes through the limited current module; when the power switch is closed, discharging is performed through the quick discharging module.
5. The high current switching device according to claim 1, wherein said power switch module comprises MOS transistors, and said MOS transistors are MOS transistors with low on-state and high voltage endurance.
6. The high-current switching device according to claim 2, wherein the heat dissipation module comprises a switch tube fixing block, a heat sink and a fan; the switch tube fixing block is connected with the power switch module and is connected with the radiator through heat-conducting glue; the fan is located on one side of the switch device.
7. A high current switching device according to claim 3, wherein said fiber input conversion interface comprises a fiber transmitting module and a fiber receiving module; the optical fiber transmitting module transmits optical signals to the optical fiber receiving module.
8. A high current switching device according to claim 7, wherein the optical fiber receiving module is connected with a photoelectric conversion module; the photoelectric conversion module is used for converting the optical signal into an electric signal and transmitting the electric signal to the driving module.
9. A high current switching device according to claim 1, wherein the power supply interface connector is a high current power supply interface connector.
CN202110917867.3A 2021-08-11 2021-08-11 Heavy current switch device Pending CN113630110A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110917867.3A CN113630110A (en) 2021-08-11 2021-08-11 Heavy current switch device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110917867.3A CN113630110A (en) 2021-08-11 2021-08-11 Heavy current switch device

Publications (1)

Publication Number Publication Date
CN113630110A true CN113630110A (en) 2021-11-09

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582745A (en) * 1991-09-20 1993-04-02 Hitachi Ltd Cmos lsi
JPH06130914A (en) * 1992-06-09 1994-05-13 Nec Corp Plasma display driving device
KR20040067501A (en) * 2003-01-23 2004-07-30 삼성전자주식회사 Digital to analog converter with low skew and glitch
CN1571276A (en) * 2004-05-13 2005-01-26 中科院广州电子技术有限公司 A multi-path high-voltage heavy-current silicon controlled switch device
WO2006129597A1 (en) * 2005-06-03 2006-12-07 Rohm Co., Ltd. Drive circuit for supplying, based on control signal, current to load, and mobile information terminal incorporating the same
US20090096511A1 (en) * 2007-10-12 2009-04-16 Monolithic Power Systems, Inc. Method and apparatus for high performance switch mode voltage regulators
CN104579279A (en) * 2015-01-20 2015-04-29 华北电力大学(保定) Optical fiber trigger type high-voltage solid-state switch
CN209046518U (en) * 2018-12-26 2019-06-28 郑州科创电子有限公司 High-power parallel connection power supply driving circuit based on IGBT
CN210957794U (en) * 2019-11-20 2020-07-07 刘翠萍 Anti-reverse connection large-current switch circuit
CN213937863U (en) * 2020-12-31 2021-08-10 苏州峰极电磁科技有限公司 Synchronous driving circuit of array type silicon controlled high-voltage large-current pulse switch

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582745A (en) * 1991-09-20 1993-04-02 Hitachi Ltd Cmos lsi
JPH06130914A (en) * 1992-06-09 1994-05-13 Nec Corp Plasma display driving device
KR20040067501A (en) * 2003-01-23 2004-07-30 삼성전자주식회사 Digital to analog converter with low skew and glitch
CN1571276A (en) * 2004-05-13 2005-01-26 中科院广州电子技术有限公司 A multi-path high-voltage heavy-current silicon controlled switch device
WO2006129597A1 (en) * 2005-06-03 2006-12-07 Rohm Co., Ltd. Drive circuit for supplying, based on control signal, current to load, and mobile information terminal incorporating the same
US20090096511A1 (en) * 2007-10-12 2009-04-16 Monolithic Power Systems, Inc. Method and apparatus for high performance switch mode voltage regulators
CN104579279A (en) * 2015-01-20 2015-04-29 华北电力大学(保定) Optical fiber trigger type high-voltage solid-state switch
CN209046518U (en) * 2018-12-26 2019-06-28 郑州科创电子有限公司 High-power parallel connection power supply driving circuit based on IGBT
CN210957794U (en) * 2019-11-20 2020-07-07 刘翠萍 Anti-reverse connection large-current switch circuit
CN213937863U (en) * 2020-12-31 2021-08-10 苏州峰极电磁科技有限公司 Synchronous driving circuit of array type silicon controlled high-voltage large-current pulse switch

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