CN1571276A - A multi-path high-voltage heavy-current silicon controlled switch device - Google Patents
A multi-path high-voltage heavy-current silicon controlled switch device Download PDFInfo
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- CN1571276A CN1571276A CN 200410027180 CN200410027180A CN1571276A CN 1571276 A CN1571276 A CN 1571276A CN 200410027180 CN200410027180 CN 200410027180 CN 200410027180 A CN200410027180 A CN 200410027180A CN 1571276 A CN1571276 A CN 1571276A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Abstract
The invention is a multichannel high-voltage heavy current silicon-controlled rectifier (SCR) switching device, including CPU MCU, power drive circuit, heavy current pulse forming circuit, many triggering circuits and many SCRs, where one outlet of the CPU MCU is connected through the power drive circuit to input end of the heavy current pulse forming circuit, the output end of the heavy current pulse forming circuit is connected with many anodes of many SCRs, many cathodes of these SCRs are connected with many corresponding output ends, each triggering circuit is connected between a corresponding one of many output ports of CPU MCU and a corresponding control stage of many control stages of these SCRs. There can be output port extension circuits connected between many triggering circuits and many output ports of CPU MCU. The invention can conveniently switch on or switch off current of multichannel SCRs, realizing controlled heavy current switch-on&-off output of SCRs and omitting complex high power turn-off circuit.
Description
Technical field
The present invention relates to a kind of device of controlling high-voltage great-current controllable silicon break-make, relate in particular to a kind of device of controlling multichannel high-voltage heavy controllable silicon break-make.
Background technology
Controllable silicon is as device for power switching, and cost is low, the fast big characteristics of current of switch high-pressure of switching frequency but have.But it is difficult to turn-off, and is the difficult point that controllable silicon is used always.Existing multichannel high-voltage heavy controllable silicon cut-off method all is to adopt the complicated high-power breaking circuit of pure hardware, and instantaneous trip controllable silicon operating current reaches and turn-offs the silicon controlled purpose.Its shortcoming is the breaking circuit complexity, the production debug difficulties, and power consumption is big, and functional reliability is low.
Summary of the invention
It is simple that purpose of the present invention proposes a kind of circuit exactly, convenient multichannel controllable silicon, the multichannel high-voltage heavy reverse-blocking tetrode thyristor device that intelligent degree is high of turn-offing.
For achieving the above object, a kind of multichannel high-voltage heavy reverse-blocking tetrode thyristor of the present invention device, comprise the CPU single-chip microcomputer, power driving circuit, heavy current pulse forms circuit, a plurality of circuits for triggering and a plurality of controllable silicon, a delivery outlet of CPU single-chip microcomputer connects the input that heavy current pulse forms circuit through power driving circuit, heavy current pulse forms a plurality of anodes of a plurality of silicon controlleds of output termination of circuit, the corresponding a plurality of negative electrodes of described a plurality of silicon controlled connect corresponding a plurality of outputs respectively, and described a plurality of circuits for triggering are connected on respectively between corresponding a plurality of delivery outlets of CPU single-chip microcomputer and the corresponding a plurality of controlled stages of a plurality of controllable silicon.
Can be connected to the delivery outlet expanded circuit between the corresponding a plurality of delivery outlets of described a plurality of circuits for triggering and CPU single-chip microcomputer.
Owing to adopted the CPU single-chip microcomputer, delivery outlet through being programmed in single-chip microcomputer very easily produces high-frequency impulse, form circuit through power driving circuit and heavy current pulse, form the heavy current pulse ripple at multichannel silicon controlled anode, when pulse is in electronegative potential, controllable silicon can be turn-offed, a plurality of delivery outlets through being programmed in single-chip microcomputer produce the multichannel start pulse signal, if the delivery outlet of single-chip microcomputer is not enough, then can insert the delivery outlet expanded circuit, output through being programmed in the delivery outlet expanded circuit produces the multichannel start pulse signal equally, as long as start pulse signal and heavy current pulse ripple signal are corresponding in time, just can be open-minded easily, cut off multichannel silicon controlled electric current, realized the controlled output of the big current switching of silicon controlled, saved complicated high-power breaking circuit.
Description of drawings
Below be the explanation of accompanying drawing drawing:
Fig. 1 is the circuit block diagram of a kind of multichannel high-voltage heavy reverse-blocking tetrode thyristor of the present invention device;
Fig. 2 has the circuit block diagram of delivery outlet expanded circuit for a kind of multichannel high-voltage heavy reverse-blocking tetrode thyristor of the present invention device;
Fig. 3 is the circuit theory diagrams of 24 road high-voltage great-current reverse-blocking tetrode thyristor devices for the present invention;
Fig. 4 is the A point heavy current pulse ripple of 24 road high-voltage great-current reverse-blocking tetrode thyristor devices, 24 road controllable silicon output signal Q1-Q24, the sequential chart of the triggering control signal of controlled stage B1 to B24;
Embodiment
The CONSTRUCTED SPECIFICATION of the embodiment of the invention is described in detail in detail below in conjunction with accompanying drawing:
As shown in Figure 1.A kind of multichannel high-voltage heavy reverse-blocking tetrode thyristor of present embodiment device, comprise CPU single-chip microcomputer 1, power driving circuit 2, heavy current pulse forms circuit 3, a plurality of circuits for triggering 41-4n and a plurality of controllable silicon SCR 1-SCRn, a delivery outlet of CPU single-chip microcomputer 1 connects the input that heavy current pulse forms circuit 3 through power driving circuit 2, heavy current pulse forms a plurality of anodes of a plurality of controllable silicon SCR 1-SCRn of output termination of circuit 3, corresponding a plurality of negative electrodes of described a plurality of controllable silicon SCR 1-SCRn meet corresponding a plurality of output Q1-Qn respectively, and described a plurality of circuits for triggering 41-4n are connected on respectively between CPU single-chip microcomputer 1 corresponding a plurality of delivery outlet I/O1-I/On and the corresponding a plurality of controlled stages of a plurality of controllable silicon SCR 1-SCRn.
As shown in Figure 2, many when the controllable silicon quantity of needs control, the delivery outlet of single-chip microcomputer is not enough, then can insert delivery outlet expanded circuit 5 between a plurality of circuits for triggering 41-4n and CPU single-chip microcomputer 1 corresponding a plurality of delivery outlet I/O1-I/Om.
As shown in Figure 3, be the circuit theory diagrams of 24 road high-voltage great-current reverse-blocking tetrode thyristor devices, wherein power driving circuit 2 adopts the MOSFET analog line driver, also can adopt IGBT power model etc.Heavy current pulse forms circuit 3 and adopts transformer T, the one termination VDD high pressure on former limit, adopt 600V, the other end is the input that heavy current pulse forms circuit 3, one end ground connection of secondary, the other end is the output that heavy current pulse forms circuit 3,24 circuits for triggering 41-424, wherein each circuits for triggering is by transistor driving, transistorized base stage is the input of circuits for triggering, collector electrode is the output of circuits for triggering, adopts 3-8 decoder 74LS138 and 4-16 decoder 74LS154 as delivery outlet expanded circuit 5, to solve the deficiency of CPU single-chip microcomputer 1 delivery outlet.
As shown in Figure 3, through programming, an I/O I/O port output high-frequency pulse signal of CPU single-chip microcomputer, drive input transformer T through the MOSFET analog line driver, transformer T output heavy current pulse ripple is supplied with 24 controllable silicon SCR 1-SCR24, through programming, 24 road outputs that CPU Single-chip Controlling 3-8 decoder 74LS138 and 4-16 decoder 74LS154 the form staggered pulse of output time respectively, give the transistor BG1 to BG24 among corresponding 24 circuits for triggering 41-424, after the anti-phase driving of transistor BG1 to BG24, deliver to 24 controllable silicon SCR 1-SCR24 control corresponding levels respectively, as long as the rising edge of heavy current pulse ripple that A is ordered and the triggering control signal of 24 controllable silicon SCR 1-SCR24 control corresponding level B1 to B24 is strict synchronism in time, just can be open-minded easily, cut off the silicon controlled electric current, realize the controlled work of silicon controlled.Reach the output in turn of each road controllable silicon electric current of programming Control.
Figure 4 shows that the A point heavy current pulse ripple of 24 road high-voltage great-current reverse-blocking tetrode thyristor devices, 24 road controllable silicon output signal Q1-Q24, the sequential chart of the triggering control signal of controlled stage B1 to B24.
Present technique is applied in the program control accurate source of welding current of multichannel, has realized the output of 24 tunnel high speed spot-welded on electric currents, and switching current reaches 500 amperes, and this technology is applied in the accurate source of welding current of 24 distance controls, and is respond well.
Claims (7)
1. multichannel high-voltage heavy reverse-blocking tetrode thyristor device, it is characterized in that: comprise CPU single-chip microcomputer (1), power driving circuit (2), heavy current pulse forms circuit (3), a plurality of circuits for triggering (41-4n) and a plurality of controllable silicon (SCR1-SCRn), a delivery outlet of CPU single-chip microcomputer (1) connects the input that heavy current pulse forms circuit (3) through power driving circuit (2), heavy current pulse forms a plurality of anodes of a plurality of controllable silicons of output termination (SCR1-SCRn) of circuit (3), corresponding a plurality of negative electrodes of described a plurality of controllable silicon (SCR1-SCRn) connect corresponding a plurality of outputs (Q1-Qn) respectively, and described a plurality of circuits for triggering (41-4n) are connected on respectively between corresponding a plurality of delivery outlets of CPU single-chip microcomputer (1) and the corresponding a plurality of controlled stages of a plurality of controllable silicon (SCR1-SCRn).
2. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 1 is characterized in that: be connected to delivery outlet expanded circuit (5) between described a plurality of circuits for triggering (41-4n) and the corresponding a plurality of delivery outlets of CPU single-chip microcomputer (1).
3. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 1 and 2 is characterized in that: described power driving circuit (2) adopts the MOSFET analog line driver.
4. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 1 and 2 is characterized in that: described power driving circuit (2) adopts the IGBT power model.
5. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 1 and 2, it is characterized in that: described heavy current pulse forms circuit (3) and adopts transformer T, the one termination high pressure VDD on former limit, the other end is the input that heavy current pulse forms circuit (3), one end ground connection of secondary, the other end are the output that heavy current pulse forms circuit (3).
6. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 1 and 2, it is characterized in that: described a plurality of circuits for triggering (41-4n), wherein each is by transistor driving, and transistorized base stage is the input of circuits for triggering, and collector electrode is the output of circuits for triggering.
7. multichannel high-voltage heavy reverse-blocking tetrode thyristor device according to claim 2 is characterized in that: described delivery outlet expanded circuit (5) adopts decoder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410027180 CN1258263C (en) | 2004-05-13 | 2004-05-13 | A multi-path high-voltage heavy-current silicon controlled switch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410027180 CN1258263C (en) | 2004-05-13 | 2004-05-13 | A multi-path high-voltage heavy-current silicon controlled switch device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1571276A true CN1571276A (en) | 2005-01-26 |
| CN1258263C CN1258263C (en) | 2006-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200410027180 Expired - Lifetime CN1258263C (en) | 2004-05-13 | 2004-05-13 | A multi-path high-voltage heavy-current silicon controlled switch device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630110A (en) * | 2021-08-11 | 2021-11-09 | 杭州中安电子有限公司 | Heavy current switch device |
-
2004
- 2004-05-13 CN CN 200410027180 patent/CN1258263C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630110A (en) * | 2021-08-11 | 2021-11-09 | 杭州中安电子有限公司 | Heavy current switch device |
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| Publication number | Publication date |
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| CN1258263C (en) | 2006-05-31 |
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Granted publication date: 20060531 |