CN101447731A - Synchronous DC/DC converter - Google Patents

Synchronous DC/DC converter Download PDF

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Publication number
CN101447731A
CN101447731A CNA2007101877909A CN200710187790A CN101447731A CN 101447731 A CN101447731 A CN 101447731A CN A2007101877909 A CNA2007101877909 A CN A2007101877909A CN 200710187790 A CN200710187790 A CN 200710187790A CN 101447731 A CN101447731 A CN 101447731A
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CN
China
Prior art keywords
switch
mode switch
trivalent
material consumption
greatest extent
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Pending
Application number
CNA2007101877909A
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Chinese (zh)
Inventor
M·A·布里埃
J·张
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Publication date
Priority claimed from US11/986,848 external-priority patent/US7902809B2/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of CN101447731A publication Critical patent/CN101447731A/en
Pending legal-status Critical Current

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Abstract

The present invention discloses a buck converter circuit in which one or both of the control switch and the synchronous switch are III-nitride-based depletion mode. An enhancement mode switch is connected with one or both of the III-nitride based switches and operated to prevent conduction of current by the III-nitride based switch until all biases are established for proper operation.

Description

Synchronous DC/DC transducer
Related application
The application requires the interests of the U.S. Provisional Application 60/867,437 of submission on November 28th, 2006, and its full content is incorporated by reference thereto.
Technical field
The present invention relates to the DC/DC change-over circuit, and relate more particularly to a kind of step-down controller (buck converter) that uses one or more depletion-modes based on the switch of trivalent nitride.
Background technology
Synchronous buck converter circuit is widely used in the DC/DC switch application.Traditionally, the power field effect transistor (MOSFET) based on silicon is applied to this type of circuit.Heterojunction switch based on the trivalent nitride also is well-known, and has bigger current capacity and improved voltage ability to bear than the device based on silicon of same size, and has reduced parasitic capacitance.Yet many switches based on the trivalent nitride that are suitable for power application do not possess gate signal usually.
Summary of the invention
Be a kind of transducer in a circuit according to the invention, this transducer comprises first switch, trivalent nitrogenize material consumption mode switch and enhancement mode switch to the greatest extent, this enhancement mode switch be set at connect trivalent nitrogenize material consumption to the greatest extent on the guiding path of mode switch with the guiding path of mode switch to the greatest extent of the described connection trivalent of cut-off/close nitrogenize material consumption optionally.
According to an aspect of the present invention, the feasible electric current that flows to the trivalent nitride switch of described enhancement mode switch is switched on.
According to another aspect of the present invention, described enhancement mode switch cuts off the electric current that flows to the trivalent nitride switch.
Description of drawings
Fig. 1 has shown the step-down controller circuit according to prior art;
Fig. 2 A-2G has shown the oscillogram of the transducer of Fig. 1;
Fig. 3 A-3C has shown the step-down controller of the device that comprises the most pattern of at least one trivalent nitrogenize material consumption;
Fig. 4-6 has shown the starting switch that comprises enhancement mode so that electric current can flow into the execution mode of the trivalent nitride switch that is in flash;
Fig. 7 has shown the oscillogram of the execution mode of Fig. 4-6;
Fig. 8-14 has shown and has comprised that enhancement mode cuts off switch to cut off the execution mode of the electric current that flows into the trivalent nitride switch that is in low limit;
Figure 15 has shown the oscillogram of the execution mode of Fig. 8-14B;
Figure 16 has shown the starting switch that comprises the trivalent nitride switch that is used to be in low limit and flash and another execution mode that cuts off switch.
Embodiment
Fig. 1 has shown conventional step-down controller circuit, and this circuit comprises the Q with control MOSFET 1(based on silicon) series connection have a voltage V In Input DC source 20, outputting inductance L Out30 and output node V Out31.Synchronous MOSFET Q 2(based on silicon) is connected and is positioned at Q 1And L OutBetween switching node 27 and ground (return terminal of battery 20) between.Output capacitance C Out32 provide by common mode.Device Q 1And Q 2Can have parasitic internal body diodes D 1And D 2
Control integrated circuit (IC) (driver 21) is connected to field-effect transistor Q 1And Q 2Gate pole G 1And G 2, and device as described in shown in Fig. 2 A and 2B, driving.Bias voltage V DRConnect with excitation IC 21 by electric capacity 22 (not shown).The waveform of various electric currents in the circuit has been shown in Fig. 2 C to 2G.Output V OutMeasured and at G 1And G 2The timing of voltage at place is suitably revised changing duty ratio D (Fig. 2 A), thus voltage V no matter InHow to change, all keep predetermined fixedly output voltage V Out
Synchronous buck converter among Fig. 1 is widely used as the power converter circuit of non-isolation based on the half-bridge topology of himself.Expect that this transducer can reduce idle component to minimum under higher switching frequency, make switch Q 1And Q 2Dynamic characteristic become key factor.Therefore, the MOSFET Q among Fig. 1 based on silicon 1And Q 2Need minimize its parasitic capacitance, particularly gate pole electric capacity to drain electrode (Miller); And source electrode arrives the electric capacity of drain electrode (output) to increase the efficient of circuit.
Gallium nitride (GaN) switch is known (for example trivalent heterojunction High Electron Mobility Transistor (HEMT) device), this switch is compared with MOSFET based on silicon has some improved switching characteristics, and particularly has lower parasitic Miller (Miller) and output capacitance.
In power converter was used, for example the DC-DC transducer was expected to use and is often opened (depletion-mode) trivalent nitride heterojunction power semiconductor.A kind of such application can be to comprise at least one trivalent nitrogenize material consumption step-down controller of pattern heterojunction power semiconductor to the greatest extent.
Therefore, for example, control switch Q 1With synchro switch Q 2Can be all depletion mode device (Fig. 3 A), have only synchro switch Q 2For depletion mode device (Fig. 3 B), perhaps has only control switch Q 1Be depletion mode device (Fig. 3 C).
Using at least one often to open in the power converter of (depletion-mode) device, if V InPrior to V Dr Excitation IC driver 21 or V OutBy prebias thereby cause at V InTo V OutBetween or V OutTo the short circuit between the ground, then may cause damage to circuit.
By providing starting switch to overcome the problems referred to above, this starting switch has solved V in a circuit according to the invention InAnd V DrThe excitation sequencing problem, perhaps cut off switch and handle the prebias problem by providing.As shown in figure 16, above-mentioned two kinds of schemes can be used in combination.
With reference now to Fig. 4,, identical in the figure Reference numeral is represented identical feature, in the circuit of first embodiment of the invention, based on the starting switch Q of silicon 3Control switch Q with the most pattern of trivalent nitrogenize material consumption 1Series connection, this control switch Q 1Silicon synchro switch Q with enhancement mode 2The MOSFET of silicon (for example based on) is in step-down and arranges.Starting switch Q 3Be normal open switch, this switch can be the power MOSFET based on silicon that the enabling signal EN of the self-driven device 23 of origin drives in a preferred embodiment.
With reference to figure 5, in second execution mode, electric capacity 25 is connected in parallel V InAnd between the ground to reduce owing to insert starting switch Q 3And the parasitic component that causes.Other aspects, arranging of circuit is similar with Fig. 4.
With reference now to Fig. 6,, in the 3rd execution mode according to the present invention, described starting switch Q 3Be connected on trivalent nitride control switch Q 1And between the switching node 27.Other aspects, the circuit of first execution mode shown in the circuit shown in Fig. 6 and Fig. 4 is similar.
Fig. 7 has shown and has comprised starting switch Q 3The oscillogram of circuit.Therefore, work as V InBack bias voltage V prior to driver IC DrWhen being established, the gate pole of trivalent nitride switch will be not by back bias voltage to turn-off.Therefore, described trivalent nitride device still conducting so that the input voltage pass through Q 1Arrive output.In order to address this problem, described starting switch is turned off until negative V DrThe threshold voltage (under-voltage locking (UVLO)) that surpasses described trivalent nitride switch is established.The turn-on and turn-off of starting switch are by the EN signal controlling.Same order can take place during stopping to encourage.Work as V DrWhen being brought down below the UVLO threshold value, starting switch turn-offs the conducting that is caused by described trivalent nitride switch to stop.At normal operation period, Q 1And Q 2Pulse signal indicating impulse width modulated (PWM) conversion.
With reference now to Fig. 8,, in circuit according to the 4th execution mode of the present invention, synchro switch Q 2Be the trivalent nitride switch of depletion-mode, described control switch Q of while 1Be based on the device of silicon, for example, based on the power MOSFET of silicon.In order to prevent owing to the prebias situation (promptly may be because power switch Q during encouraging 2Discharge and the part of V that exists Out) and switch Q is cut off in the damage that causes 4Be connected between inductance 30 and the output node 31.Cut off switch Q 4Be preferably the switch based on silicon, for example, based on the power MOSFET of silicon, the drive signal PBEN of the self-driven device 33 of this power MOSFET origin operates.
With reference now to Fig. 9,, in circuit, cuts off switch Q according to the 5th execution mode 4Be connected between switching node 27 and the inductance 30.Other aspects, the circuit of this circuit and the 4th execution mode shown in Figure 8 is approximate.
With reference to Figure 10, in circuit, cut off switch Q according to the 6th execution mode 4Be connected on synchro switch Q 2And between the switching node 27.Other aspects, the circuit of this circuit and the 4th execution mode is approximate.
With reference to Figure 11, in circuit, cut off switch Q according to the 7th execution mode 4Be connected on synchro switch Q 2And between the ground.Other aspects, the 7th execution mode and the 4th execution mode of the present invention are approximate.
With reference now to Figure 12,, in circuit, cuts off switch Q according to the 8th execution mode 4Be connected on synchro switch Q 2Earth point and the earth point of output capacitance 32 between.Described the 8th execution mode can also comprise and is connected in V in parallel InAnd Q 2Return terminal between electric capacity 25.Electric capacity 32 is provided for the Low ESR bypass of moving of power stage, and this bypass comprises driver and Q 1/ Q 2In case, because Q 4Be turned off, ground promptly is cut off, and then the return terminal of electric capacity 32 is no longer identical with ground.Other aspects, the 8th execution mode and the 4th execution mode are approximate.
With reference to Figure 13, in circuit, cut off switch Q according to the 9th execution mode 4Be connected in series in output capacitance 32 and V OutBetween the node 31.Other aspects, the 9th execution mode and the 4th execution mode are approximate.
With reference now to Figure 14,, in the circuit according to the tenth execution mode, electric capacity 25 can omit from the 8th execution mode.Note in the present embodiment, owing to cut off switch Q 4Existence, V OutReturn terminal no longer be earth terminal.Driver and Q have relatively been moved 1/ Q 2Figure 12, present embodiment has moved V OutTherefore, difference is V InThe return terminal of electric capacity is to be connected to Q 2Still be connected to V Out
Figure 15 has shown the cut-out switch Q that comprises prebias according to of the present invention 3The oscillogram of circuit.Therefore, work as part of V OutBack bias voltage V prior to driver IC DrWhen being established, Q 2Gate pole will be born to turn-off by back bias voltage.Therefore, Q 2Still conducting is with discharge V Out, this is unallowed in many application.In order to address this problem, described cut-out switch is inserted into Q 2With V is provided OutElectric capacity between.Starting switch is turned off until negative V DrThe threshold voltage (UVLO) that surpasses the trivalent nitride switch is established.Conducting/shutoff of cutting off switch is by the PEN signal controlling.Same order takes place during stopping to encourage.Work as V DrReduce to the UVLO threshold value when following, cut off switch and turn-off the conducting that causes by described trivalent nitride switch to stop.At normal operation period, Q 1And Q 2Pulse signal represent PWM conversion.
Figure 16 has shown another embodiment of the present invention, in this embodiment, and starting switch Q 3With cut-out switch Q 4Realized together, and control switch Q 1With synchro switch Q 2All are trivalent nitride switch of depletion-mode.Figure 16 just shows how to start and to cut off the embodiment that switch and flash and low limit trivalent nitride switch together use.Being used for combining of execution mode that flash trivalent nitride switch and Fig. 8-14 be used for low limit trivalent nitride switch among Fig. 4-6 can also be as the application of Figure 16 to obtain further execution mode.
Though the present invention utilizes specific implementations to be described, many other variation and modification and other application will be conspicuous for those skilled in the art.Therefore, the present invention is not preferably and is limited by certain content disclosed herein.

Claims (16)

1. DC-DC transducer comprises:
First switch;
Trivalent nitrogenize material consumption is mode switch to the greatest extent; And
Enhancement mode switch, this switch are set at and connect described trivalent nitrogenize material consumption to the greatest extent on the guiding path of mode switch, connect the described trivalent nitrogenize material consumption guiding path of mode switch to the greatest extent with cut-off/close optionally.
2. transducer according to claim 1, wherein said first switch is the enhancement mode switch.
3. transducer according to claim 1, the most mode switch of wherein said trivalent nitrogenize material consumption are the control switchs in the step-down controller.
4. transducer according to claim 3, wherein said enhancement mode switch and described trivalent nitrogenize material consumption mode switch to the greatest extent are connected in series, and are used to make the electric current by the most mode switch of described trivalent nitrogenize material consumption to be switched on.
5. transducer according to claim 1, the most mode switch of wherein said trivalent nitrogenize material consumption are the synchro switches in the step-down controller.
6. transducer according to claim 6, wherein said enhancement mode switch and described trivalent nitrogenize material consumption mode switch to the greatest extent are connected in series, and are used to make the electric current by the most mode switch of described trivalent nitrogenize material consumption to be switched on.
7. transducer according to claim 1, wherein said first switch and described trivalent nitrogenize material consumption mode switch to the greatest extent all are connected to switching node, and the most mode switch of described trivalent nitrogenize material consumption is connected between described enhancement mode switch and the described switching node.
8. transducer according to claim 1, wherein said first switch and described trivalent nitrogenize material consumption mode switch to the greatest extent all are connected to switching node, and described enhancement mode switch is connected between most mode switch of described trivalent nitrogenize material consumption and the described switching node.
9. transducer according to claim 1, wherein said first switch and described trivalent nitrogenize material consumption mode switch to the greatest extent all are connected to switching node, and this transducer also comprises the output circuit that is connected between described switching node and the ground, and wherein said enhancement mode switch is the part of described output circuit and is used for cutting off and the described trivalent nitrogenize material consumption circulation of the electric current of mode switch to the greatest extent.
10. transducer according to claim 9, wherein said output circuit comprises the inductance that is connected between described switching node and output node, and being connected output capacitance between described output node and the ground, wherein said enhancement mode switch is connected in series between described inductance and described switching node.
11. transducer according to claim 9, wherein said output circuit comprises the inductance that is connected between described switching node and output node, and being connected output capacitance between described output node and the ground, wherein said enhancement mode switch is connected in series between described inductance and described output node.
12. transducer according to claim 9, wherein said output circuit comprises the inductance that is connected between described switching node and output node, and being connected output capacitance between described output node and the ground, wherein said enhancement mode switch is connected in series between described output capacitance and described output node.
13. transducer according to claim 9, wherein said output circuit comprises the inductance that is connected between described switching node and output node, and being connected output capacitance between described output node and the ground, wherein said enhancement mode switch is connected in series between described output capacitance and ground.
14. transducer according to claim 9, wherein said output circuit comprises the inductance that is connected between described switching node and output node, and being connected output capacitance between described output node and the ground, wherein said enhancement mode switch is connected in series in described trivalent nitrogenize material consumption to the greatest extent between the earth point of the earth point of pattern device and described output capacitance.
15. transducer according to claim 1, wherein said first switch and described trivalent nitrogenize material consumption mode switch to the greatest extent all are connected to switching node, described trivalent nitrogenize material consumption mode switch to the greatest extent is a synchro switch, and described enhancement mode switch is connected between most mode switch of described trivalent nitrogenize material consumption and the described switching node.
16. transducer according to claim 1, wherein said first switch and described trivalent nitrogenize material consumption mode switch to the greatest extent all are connected to switching node, described trivalent nitrogenize material consumption mode switch to the greatest extent is a synchro switch, and described enhancement mode switch is connected between most mode switch of described trivalent nitrogenize material consumption and the ground.
CNA2007101877909A 2007-11-27 2007-11-30 Synchronous DC/DC converter Pending CN101447731A (en)

Applications Claiming Priority (2)

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US11/986,848 US7902809B2 (en) 2006-11-28 2007-11-27 DC/DC converter including a depletion mode power switch
US11/986848 2007-11-27

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102076148A (en) * 2009-11-09 2011-05-25 东芝照明技术株式会社 Led lighting device and illuminating device
CN102710125A (en) * 2011-03-28 2012-10-03 东芝照明技术株式会社 Switching power supply device and lighting apparatus
EP3280040A4 (en) * 2015-03-31 2018-11-07 Furukawa Electric Co., Ltd. Power conversion device and method for controlling same
CN108880242A (en) * 2017-05-10 2018-11-23 力智电子股份有限公司 DC-DC controller and control method thereof
CN110391741A (en) * 2018-04-17 2019-10-29 意法半导体股份有限公司 Power-supply system

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WO2018235423A1 (en) * 2017-06-20 2018-12-27 シャープ株式会社 Rectifying circuit and power source device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102076148A (en) * 2009-11-09 2011-05-25 东芝照明技术株式会社 Led lighting device and illuminating device
US8742681B2 (en) 2009-11-09 2014-06-03 Toshiba Lighting & Technology Corporation LED lighting device, illuminating device and power supply therefore having a normally-on type switching element
US9155143B2 (en) 2009-11-09 2015-10-06 Toshiba Lighting & Technology Corporation LED lighting device and illuminating device
US9392655B2 (en) 2009-11-09 2016-07-12 Toshiba Lighting & Technology Corporation LED lighting device and illuminating device
CN102710125A (en) * 2011-03-28 2012-10-03 东芝照明技术株式会社 Switching power supply device and lighting apparatus
CN102710125B (en) * 2011-03-28 2015-03-11 东芝照明技术株式会社 Switching power supply device and lighting apparatus
EP3280040A4 (en) * 2015-03-31 2018-11-07 Furukawa Electric Co., Ltd. Power conversion device and method for controlling same
US10389239B2 (en) 2015-03-31 2019-08-20 Furukawa Electric Co., Ltd. Power conversion device with protection device and method of controlling the same
CN108880242A (en) * 2017-05-10 2018-11-23 力智电子股份有限公司 DC-DC controller and control method thereof
CN108880242B (en) * 2017-05-10 2021-04-13 力智电子股份有限公司 DC-DC controller and control method thereof
CN110391741A (en) * 2018-04-17 2019-10-29 意法半导体股份有限公司 Power-supply system
US11283353B2 (en) 2018-04-17 2022-03-22 Stmicroelectronics S.R.L. Power supply system
US11742757B2 (en) 2018-04-17 2023-08-29 STMicroelectronics (Alps) SAS Power supply system

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Open date: 20090603