CN113571578A - 一种带载流子存储层的igbt结构及其制造方法 - Google Patents
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Abstract
本发明涉及IGBT技术领域,且公开了一种带载流子存储层的IGBT结构及其制造方法,包括:集电极金属和p+集电极,所述集电极金属的内部底面设置有p+集电极,所述集电极金属的上方设置有n型衬底,所述n型衬底的内部均匀设置有沟槽,所述沟槽上分别设置有n型载流子存储层和浅p型阱。该种带载流子存储层的IGBT结构及其制造方法,通过利用光刻、刻蚀工艺进行两步沟槽刻蚀,第一步沟槽刻蚀3‑4微米,然后进行零角度注入12次方剂量磷杂质,退火后形成n型载流子存储层,第二步沟槽刻蚀2‑3微米,从而形成最终沟槽,n型载流子存储层的设置可有效提高沟道跨导,降低IGBT导通功耗,从而提高IGBT在实际使用中的实用性。
Description
技术领域
本发明涉及IGBT技术领域,具体为一种带载流子存储层的IGBT结构及其制造方法。
背景技术
IGBT作为新型电力半导体场控自关断器件,集功率MOSFET的高速性能与双极性器件的低电阻于一体,具有输进阻抗高,电压控制功耗低,控制电路简单,耐高压,承受电流大等特性,在各种电力变换中获得极广泛的应用。
在现有技术中,随着应用功率不断增加,导致IGBT导通功耗也不断升高,使得难以实现对内部有效改进的同时,达到IGBT降低导通功耗作用。
发明内容
针对现有技术的不足,本发明提供了一种带载流子存储层的IGBT结构及其制造方法,具备能够通过第一次沟槽刻蚀后,进行零角度注入12次方剂量磷杂质,退火后形成存储层,提高沟道跨导,降低IGBT导通功耗的优点,解决了背景技术中提出的问题。
本发明提供如下技术方案:一种带载流子存储层的IGBT结构,包括:集电极金属和p+集电极,所述集电极金属的内部底面设置有p+集电极,所述集电极金属的上方设置有n型衬底,所述n型衬底的内部均匀设置有沟槽,所述沟槽上分别设置有n型载流子存储层和浅p型阱,所述浅p型阱的内部分别设置有n+发射区和p+型短路区,所述浅p型阱的上端分别设置有栅极氧化层、氧化层和发射极金属,所述栅极氧化层的上方分别设置有栅极多晶层、氧化层和发射极金属。
优选的,所述n型载流子存储层设置在沟槽的中下位置处,所述浅p型阱设置在沟槽的中上位置处。
一种带载流子存储层的IGBT制造方法,包括以下步骤:
S1,n型漂移区表面生长5000A氧化层;
S2,第一次光刻,通过光刻、刻蚀工艺在n型衬底的顶部光刻出第一层p型块注入窗口;退火形成第一层终端p型阱;
S3,第二次光刻,通过光刻、刻蚀工艺在n型衬底的顶部光刻、刻蚀有源区区域;
S4,n型衬底顶部淀积7000A致密氧化层作为硬掩膜;
S5,第二次光刻,通过光刻、刻蚀工艺在硬掩膜的顶部光刻、刻蚀出沟槽窗口;通过硬掩膜在n型衬底顶部刻蚀出3至4微米沟槽;
S6,利用注入机进行零角度注入12次方磷杂质,950℃退火激活,形成n型载流子存储层;
S7,刻蚀2-3微米沟槽;
S8,高温牺牲氧化,牺牲氧化去除,1000至1050℃做栅极氧化层;
S9,多晶填充,回刻掉表面多晶;
S10,第三次光刻,通过光刻、刻蚀工艺,光刻刻蚀出浅p型阱注入窗口,p阱杂质注入,退火形成浅p型阱;
S11,第四次光刻,通过光刻工艺,光刻出n+发射区注入窗口,n+离子注入,化学气相淀积氧化层;
S12,第五次光刻,通过光刻、刻蚀工艺,光刻、蚀刻出发射极金属接触孔,p+离子注入,在℃温度下,氮气气氛中退火30分钟;
S13,设置接触窗口,在结构完成部分的顶部分别设置金属层和氧化层并在氧化层设置金属层分别形成发射极金属和栅极氧化层,去除n型衬底的背面,通过离子注入做p+背面注入,400℃退火,设置金属材料层形成集电极金属。
与现有技术对比,本发明具备以下有益效果:
1、该种带载流子存储层的IGBT结构及其制造方法,通过利用光刻、刻蚀工艺进行两步沟槽刻蚀,第一步沟槽刻蚀3-4微米,然后进行零角度注入12次方剂量磷杂质,退火后形成n型载流子存储层,第二步沟槽刻蚀2-3微米,从而形成最终沟槽,n型载流子存储层的设置可有效提高沟道跨导,降低IGBT导通功耗,从而提高IGBT在实际使用中的实用性。
附图说明
图1为本发明步骤S1、S2、S3、S4的第一种结构示意图;
图2为本发明步骤S5、S6的第一种结构示意图;
图3为本发明步骤S7、S8、S9的第一种结构示意图;
图4为本发明步骤S10的第一种结构示意图;
图5为本发明步骤S11、S12的第一种结构示意图;
图6为本发明步骤S13的第一种结构示意图。
图中:1、集电极金属;2、p+集电极;3、n型衬底;4、硬掩膜;5、沟槽;6、n型载流子存储层;7、栅极氧化层;8、栅极多晶层;9、浅p型阱;10、n+发射区;11、p+型短路区;12、氧化层;13、发射极金属。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1-6,一种带载流子存储层的IGBT结构,包括:集电极金属1和p+集电极2,集电极金属1的内部底面设置有p+集电极2,集电极金属1的上方设置有n型衬底3,n型衬底3的内部均匀设置有沟槽5,沟槽5上分别设置有n型载流子存储层6和浅p型阱9,浅p型阱9的内部分别设置有n+发射区10和p+型短路区11,浅p型阱9的上端分别设置有栅极氧化层7、氧化层12和发射极金属13,栅极氧化层7的上方分别设置有栅极多晶层8、氧化层12和发射极金属13。
其中;n型载流子存储层6设置在沟槽5的中下位置处,浅p型阱9设置在沟槽5的中上位置处。
一种带载流子存储层的IGBT制造方法,包括以下步骤:
S1,n型漂移区表面生长5000A氧化层;
S2,第一次光刻,通过光刻、刻蚀工艺在n型衬底3的顶部光刻出第一层p型块注入窗口;退火形成第一层终端p型阱;
S3,第二次光刻,通过光刻、刻蚀工艺在n型衬底3的顶部光刻、刻蚀有源区区域;
S4,n型衬底3顶部淀积7000A致密氧化层作为硬掩膜4;
S5,第二次光刻,通过光刻、刻蚀工艺在硬掩膜4的顶部光刻、刻蚀出沟槽5窗口;通过硬掩膜4在n型衬底3顶部刻蚀出3至4微米沟槽;
S6,利用注入机进行零角度注入12次方磷杂质,950℃退火激活,形成n型载流子存储层6;
S7,刻蚀2-3微米沟槽5;
S8,高温牺牲氧化,牺牲氧化去除,1000至1050℃做栅极氧化层7;
S9,多晶填充,回刻掉表面多晶;
S10,第三次光刻,通过光刻、刻蚀工艺,光刻刻蚀出浅p型阱9注入窗口,p阱杂质注入,退火形成浅p型阱9;
S11,第四次光刻,通过光刻工艺,光刻出n+发射区10注入窗口,n+离子注入,化学气相淀积氧化层12;
S12,第五次光刻,通过光刻、刻蚀工艺,光刻、蚀刻出发射极金属13接触孔,p+离子注入,在875℃温度下,氮气气氛中退火30分钟;
S13,设置接触窗口,在结构完成部分的顶部分别设置金属层和氧化层12并在氧化层12设置金属层分别形成发射极金属13和栅极氧化层7,去除n型衬底3的背面,通过离子注入做p+背面注入,400℃退火,设置金属材料层形成集电极金属1。
其中;通过利用光刻、刻蚀工艺进行两步沟槽5刻蚀,第一步沟槽5刻蚀3-4微米,然后进行零角度注入12次方剂量磷杂质,退火后形成n型载流子存储层6,第二步沟槽5刻蚀2-3微米,从而形成最终沟槽5,n型载流子存储层6的设置可有效提高沟道跨导,降低IGBT导通功耗,从而提高IGBT在实际使用中的实用性。
工作原理,使用时,首先,第一次光刻,通过光刻、刻蚀工艺在n型衬底3的顶部光刻出第一层p型块注入窗口;退火形成第一层终端p型阱,第二次光刻,通过光刻、刻蚀工艺在n型衬底3的顶部光刻、刻蚀有源区区域,n型衬底3顶部淀积7000A致密氧化层作为硬掩膜4,第二次光刻,通过光刻、刻蚀工艺在硬掩膜4的顶部光刻、刻蚀出沟槽5窗口;通过硬掩膜4在n型衬底3顶部刻蚀出3至4微米沟槽,利用注入机进行零角度注入12次方磷杂质,950℃退火激活,形成n型载流子存储层6,再次刻蚀2-3微米沟槽5,高温牺牲氧化,牺牲氧化去除,1000至1050℃做栅极氧化层7,多晶填充,回刻掉表面多晶,第三次光刻,通过光刻、刻蚀工艺,光刻刻蚀出浅p型阱9注入窗口,p阱杂质注入,退火形成浅p型阱9,第四次光刻,通过光刻工艺,光刻出n+发射区10注入窗口,n+离子注入,化学气相淀积氧化层12,第五次光刻,通过光刻、刻蚀工艺,光刻、蚀刻出发射极金属13接触孔,p+离子注入,在875℃温度下,氮气气氛中退火30分钟,设置接触窗口,在结构完成部分的顶部分别设置金属层和氧化层12并在氧化层12设置金属层分别形成发射极金属13和栅极氧化层7,去除n型衬底3的背面,通过离子注入做p+背面注入,400℃退火,设置金属材料层形成集电极金属1。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (3)
1.一种带载流子存储层的IGBT结构,其特征在于,包括:集电极金属(1)和p+集电极(2),所述集电极金属(1)的内部底面设置有p+集电极(2),所述集电极金属(1)的上方设置有n型衬底(3),所述n型衬底(3)的内部均匀设置有沟槽(5),所述沟槽(5)上分别设置有n型载流子存储层(6)和浅p型阱(9),所述浅p型阱(9)的内部分别设置有n+发射区(10)和p+型短路区(11),所述浅p型阱(9)的上端分别设置有栅极氧化层(7)、氧化层(12)和发射极金属(13),所述栅极氧化层(7)的上方分别设置有栅极多晶层(8)、氧化层(12)和发射极金属(13)。
2.根据权利要求1所述的一种带载流子存储层的IGBT结构,其特征在于:所述n型载流子存储层(6)设置在沟槽(5)的中下位置处,所述浅p型阱(9)设置在沟槽(5)的中上位置处。
3.一种带载流子存储层的IGBT制造方法,其特征在于:包括以下步骤:
S1,n型漂移区表面生长5000A氧化层;
S2,第一次光刻,通过光刻、刻蚀工艺在n型衬底(3)的顶部光刻出第一层p型块注入窗口;退火形成第一层终端p型阱;
S3,第二次光刻,通过光刻、刻蚀工艺在n型衬底(3)的顶部光刻、刻蚀有源区区域;
S4,n型衬底(3)顶部淀积7000A致密氧化层作为硬掩膜(4);
S5,第二次光刻,通过光刻、刻蚀工艺在硬掩膜(4)的顶部光刻、刻蚀出沟槽(5)窗口;通过硬掩膜(4)在n型衬底(3)顶部刻蚀出3至4微米沟槽;
S6,利用注入机进行零角度注入12次方磷杂质,950℃退火激活,形成n型载流子存储层(6);
S7,刻蚀2-3微米沟槽(5);
S8,高温牺牲氧化,牺牲氧化去除,1000至1050℃做栅极氧化层(7);
S9,多晶填充,回刻掉表面多晶;
S10,第三次光刻,通过光刻、刻蚀工艺,光刻刻蚀出浅p型阱(9)注入窗口,p阱杂质注入,退火形成浅p型阱(9);
S11,第四次光刻,通过光刻工艺,光刻出n+发射区(10)注入窗口,n+离子注入,化学气相淀积氧化层(12);
S12,第五次光刻,通过光刻、刻蚀工艺,光刻、蚀刻出发射极金属(13)接触孔,p+离子注入,在875℃温度下,氮气气氛中退火30分钟;
S13,设置接触窗口,在结构完成部分的顶部分别设置金属层和氧化层(12)并在氧化层(12)设置金属层分别形成发射极金属(13)和栅极氧化层(7),去除n型衬底(3)的背面,通过离子注入做p+背面注入,400℃退火,设置金属材料层形成集电极金属(1)。
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