CN113540733B - Vertical switching structure - Google Patents
Vertical switching structure Download PDFInfo
- Publication number
- CN113540733B CN113540733B CN202110825834.6A CN202110825834A CN113540733B CN 113540733 B CN113540733 B CN 113540733B CN 202110825834 A CN202110825834 A CN 202110825834A CN 113540733 B CN113540733 B CN 113540733B
- Authority
- CN
- China
- Prior art keywords
- metal
- signal
- hole
- layer
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
Abstract
The invention discloses a vertical switching structure. The vertical transfer structure includes: the first upper metal layer, the first dielectric layer, the first lower metal layer, and the signal metal via and the ground metal via in the first dielectric layer. The signal metal through hole is a metal through hole with uneven diameter, one end of the signal metal through hole is used for being vertically connected with a signal line of the coplanar waveguide on the first upper metal layer, and the other end of the signal metal through hole is used for being vertically connected with a signal line of the substrate integrated coaxial line on the first medium layer; the metal through holes with uneven diameters are used for realizing impedance matching between the substrate integrated coaxial line and the coplanar waveguide. The number of the grounding metal through holes is multiple, the grounding metal through holes are arranged around the signal metal through holes, one end of each grounding metal through hole is connected with the first upper-layer metal layer, and the other end of each grounding metal through hole is connected with the first lower-layer metal layer. The vertical switching structure provided by the invention can realize the impedance matching between the substrate integrated coaxial line and the coplanar waveguide.
Description
Technical Field
The invention relates to the technical field of microwave circuits, in particular to a vertical switching structure.
Background
With the development of integrated circuits, interconnect switching technology has been widely focused. The substrate integrated coaxial line is used in a passive circuit due to the characteristics of good electromagnetic interference shielding performance and no dispersion, but the signal line of the substrate integrated coaxial line is positioned in a medium and cannot be directly connected with a surface circuit. Coplanar waveguides are widely used in surface circuits due to their low loss and low dispersion. Therefore, for high performance integration of passive circuits with surface circuits, a low reflection performance transition structure from a substrate integrated coaxial line to a coplanar waveguide is required.
For the situation that the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide are not in the same horizontal position, the traditional vertical switching method is to design the coplanar waveguide on the upper ground plane of the substrate integrated coaxial line and then connect the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide on the top layer through a uniform through hole. However, based on this switching method, there is a large impedance discontinuity between the substrate integrated coaxial line and the coplanar waveguide, and it is difficult to achieve the low reflection characteristic of the switching structure.
Disclosure of Invention
The invention aims to provide a vertical switching structure capable of realizing impedance matching between a substrate integrated coaxial line and a coplanar waveguide.
In order to achieve the purpose, the invention provides the following scheme:
a vertical transition structure, comprising: the first upper metal layer, the first dielectric layer, the first lower metal layer, the signal metal through hole and the grounding metal through hole; the first dielectric layer is positioned between the first upper metal layer and the first lower metal layer;
the signal metal through hole is a metal through hole with uneven diameter, is positioned in the first dielectric layer, one end of the signal metal through hole is used for being vertically connected with a signal line of the coplanar waveguide on the first upper metal layer, and the other end of the signal metal through hole is used for being vertically connected with a signal line of the substrate integrated coaxial line on the first dielectric layer; the metal through holes with uneven diameters are used for realizing impedance matching between the substrate integrated coaxial line and the coplanar waveguide;
the grounding metal through holes are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple; the plurality of grounding metal through holes are arranged around the signal metal through holes, one end of each grounding metal through hole is connected with the first upper-layer metal layer, and the other end of each grounding metal through hole is connected with the first lower-layer metal layer.
Optionally, the signal metal via includes a plurality of metal via segments in a length direction, and diameters of adjacent metal via segments are different, so as to implement impedance matching between the substrate integrated coaxial line and the coplanar waveguide.
Optionally, the plurality of ground metal vias are distributed in a ring shape, and the center of the formed ring shape is the position of the signal metal via.
Optionally, the diameters of the ground metal vias are equal.
Optionally, the method further includes: and one end of the first connecting line is vertically connected with one end of the signal metal through hole, and the other end of the first connecting line is used for being connected with the signal line of the coplanar waveguide.
Optionally, the method further includes: and one end of the second connecting wire is vertically connected with the other end of the signal metal through hole, and the other end of the second connecting wire is used for being connected with a signal wire of the substrate integrated coaxial wire.
According to the specific embodiment provided by the invention, the following technical effects are disclosed: the vertical switching structure provided by the embodiment of the invention comprises a first upper metal layer, a first dielectric layer, a first lower metal layer, a signal metal through hole and a plurality of grounding metal through holes, wherein the signal metal through hole and the plurality of grounding metal through holes are positioned in the first dielectric layer, the signal metal through holes are metal through holes with uneven diameters, one end of each metal through hole is used for being vertically connected with a signal line of a coplanar waveguide on the first upper metal layer, and the other end of each metal through hole is used for being vertically connected with a signal line of an integrated coaxial line of a substrate on the first dielectric layer. One end of each grounding metal through hole is connected with the first upper-layer metal layer, the other end of each grounding metal through hole is connected with the first lower-layer metal layer, and the plurality of grounding metal through holes are arranged around the signal metal through holes.
The uneven diameter of the metal through hole is arranged for realizing the impedance matching between the substrate integrated coaxial line and the coplanar waveguide, compared with the metal through hole with the uniform diameter in the prior art, the impedance matching between the substrate integrated coaxial line and the coplanar waveguide connected with the substrate integrated coaxial line can be realized through the design of the diameters of the signal metal through hole, and the continuity of the impedance between the substrate integrated coaxial line and the coplanar waveguide is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a vertical transition structure according to an embodiment of the present invention;
fig. 2(a) is a front view of a vertical transition structure according to an embodiment of the present invention, fig. 2(b) is a side view of the vertical transition structure according to the embodiment of the present invention, and fig. 2(c) is a top view of the vertical transition structure according to the embodiment of the present invention;
FIG. 3 is a diagram illustrating electric field distribution at different locations of a vertical via structure according to an embodiment of the present invention;
FIG. 4 shows the return loss S of the vertical via structure in the embodiment of the present invention11And transmission loss S21The effect diagram of (1).
1. Grounding the metal through hole at the coplanar waveguide; 2. a signal line of the coplanar waveguide; 3. a third upper metal layer; 4. a first upper metal layer; 5. an upper dielectric layer; 6. an intermediate metal layer; 7. a lower dielectric layer; 8. a third lower metal layer; 9. a signal metal via; 10. a first lower metal layer; 11. an internal circuit portion; 12. a second lower metal layer; 13. the substrate integrates a signal line of a coaxial line; 14. grounding the metal through hole at the substrate integrated coaxial line; 15. a second upper metal layer; 16. a ground metal via; 17. a vertical transfer structure; 18. a surface circuit portion.
Detailed Description
In the embodiments of the present application, terms such as "first" and "second" are used to distinguish the same or similar items having substantially the same function and action. For example, the first wireless communication module and the second wireless communication module are only used for distinguishing different wireless communication modules, and the sequence order thereof is not limited. Those skilled in the art will appreciate that the words "first," "second," and the like do not limit the number or order of execution.
It is noted that, in the present application, words such as "exemplary" or "for example" are used to mean exemplary, illustrative, or descriptive. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a vertical switching structure capable of realizing impedance matching between an integrated coaxial line and a coplanar waveguide.
Referring to fig. 1, the vertical transition structure 17 provided in this embodiment includes: a first upper metal layer 4, a first dielectric layer, a first lower metal layer 10, a signal metal via 9, and a ground metal via 16. The first dielectric layer is located between the first upper metal layer 4 and the first lower metal layer 10.
The signal metal through hole 9 is a metal through hole with a non-uniform diameter, is positioned in the first dielectric layer, and one end of the signal metal through hole is used for being vertically connected with the signal line 2 of the coplanar waveguide on the first upper metal layer 4, and the other end of the signal metal through hole is used for being vertically connected with the signal line 13 of the substrate integrated coaxial line on the first dielectric layer. The metal through holes with uneven diameters can be exemplified by vertical step gradient through holes.
The non-uniform diameter of the signal metal via 9 is set to achieve impedance matching between the substrate integrated coaxial line and the coplanar waveguide. Specifically, the arrangement mode and the diameter size of the uneven diameter can be found through experiments. Wherein, the setting mode of the uneven diameter can be as follows: the diameters of the segments in the length direction of the signal metal through holes are different. For example, the signal metal through hole is divided into at least two sections in the length direction, the diameters of the two adjacent sections of metal through hole sections are different, and the determination of the diameters is based on the principle of impedance matching between the substrate integrated coaxial line and the coplanar waveguide. Through setting up the signal hole of inhomogeneous diameter, the vertical switching structure self produces discontinuity because the size is inhomogeneous, through setting up suitable size, can be used for compensating or offsetting the integrated coaxial line of substrate to the discontinuity that the coplanar waveguide transmission in-process produced, realizes impedance match, and then reaches the low reflection transmission of electromagnetic wave signal.
The grounding metal through holes 16 are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple.
A plurality of ground metal vias 16 are disposed around the signal metal vias 9, one end of each ground metal via 16 is connected to the first upper metal layer 4, and the other end is connected to the first lower metal layer 10 (i.e., one end of each ground metal via 16 is open to the first upper metal layer 4, and the other end is open to the first lower metal layer 10), and is not in contact with the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide.
In one example, the ground metal vias 16 are distributed around the signal metal vias 9 in a ring shape, and the center of the ring shape is where the signal metal vias 9 are located. The distribution of the ground metal vias 16 is not limited to the annular distribution, and may be in other forms around the signal metal vias 9.
In one example, the diameters of the ground metal vias 16 are equal.
Referring to fig. 1, the vertical transition structure 17 further includes: a first connection line located in the first upper metal layer 4 and a second connection line located in the first dielectric layer. One end of the first connecting line is vertically connected with one end of the signal metal through hole 9, and the other end of the first connecting line is used for being connected with the signal line 2 of the coplanar waveguide. One end of the second connecting line is vertically connected with the other end of the signal metal through hole 9, and the other end of the second connecting line is used for being connected with a signal line 13 of the substrate integrated coaxial line.
The above-described vertical transition structure 17 is applied to a microwave circuit, see fig. 1, which includes: an internal circuit portion 11 (left side in fig. 1) and a surface circuit portion 18 (right side in fig. 1), the vertical relay structure 17 being located between the internal circuit portion 11 and the surface circuit portion 18;
the internal circuit portion 11 includes: the second upper metal layer 15, the second dielectric layer and the second lower metal layer 12, the second dielectric layer is provided with a substrate integrated coaxial line, the second upper metal layer 15 and the first upper metal layer 4 are positioned on the same plane, and the second lower metal layer 12 and the first lower metal layer 10 are positioned on the same plane.
The surface circuit layer portion 18 includes: a third upper metal layer 3, a third dielectric layer and a third lower metal layer 8, wherein the third upper metal layer 3 and the first upper metal layer 4 are positioned on the same plane, and the third lower metal layer 8 and the first lower metal layer 12 are positioned on the same plane; the third upper metal layer 3 is provided with a coplanar waveguide.
In one example, the microwave circuit further comprises: and the middle metal layer 6 is positioned in the third dielectric layer, and the middle metal layer 6 and the substrate integrated coaxial line are positioned on the same plane.
The vertical transfer structure is described in detail below:
as shown in fig. 1 and 2, the first upper metal layer 4, the second upper metal layer 15, and the third upper metal layer 3 are the same metal layer, the first lower metal layer 10, the second lower metal layer 12, and the third lower metal layer 8 are the same metal layer, and the first dielectric layer, the second dielectric layer, and the third dielectric layer are the same dielectric layer. The middle metal layer 6 divides the first dielectric layer and the third dielectric layer into an upper dielectric layer 5 and a lower dielectric layer 7, and the middle metal layer 6 and the signal line 13 of the substrate integrated coaxial line are positioned on the same plane.
The signal metal through hole 9 is divided into two sections in the length direction and is a vertical step gradual change through hole. The height of the signal metal through hole 9 is h1+h2The diameter of the metal through hole section of the upper section is d1Height of h1The diameter of the metal through hole section of the lower section is d2Height of h2The metal through hole section of the upper section is vertically connected with a signal line of the coplanar waveguide, and the metal through hole section of the lower section is vertically connected with a signal line of the substrate integrated coaxial line. By designing the combination of the signal metal through hole sections with different diameters, the impedance matching between the substrate integrated coaxial line and the coplanar waveguide connected with the signal metal through hole sections can be realized.
In the first dielectric layer of the vertical transition structure 17, the signal metal via is located in the upper dielectric layer of the first dielectric layer, the grounding metal via penetrates the first dielectric layer and is connected with the first upper metal layer 4 and the first lower metal layer 10, and is not contacted with the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide,the diameter of the ground metal via 16 is d3The height of the grounding metal via 16 is h3Taking the surrounding manner of the ground metal via 16 surrounding the signal metal via as an example, the distance between the center of the ground metal via 16 and the center 9 of the signal hole is equal to l.
The signal line of the coplanar waveguide has a width w1The width of the gap between the signal line and the upper ground plane is g. The width of the signal line of the substrate integrated coaxial line is w2. The diameters of the grounding metal through hole 14 at the substrate integrated coaxial line and the grounding metal through hole 1 at the coplanar waveguide are equal and are d4The distance between the grounding metal through holes 14 at the substrate integrated coaxial line is equal to the distance between the grounding metal through holes 1 at the coplanar waveguide, and the distances are w3。
The effect of the vertical via structure provided by the present application is described by taking the via structure of the present invention processed by the PCB process as an example. The dielectric layer is made of Rogers RT/duroid 5880 material (dielectric constant is 2.2, dielectric loss tangent is 0.0009) and has a thickness of 0.254 mm. The thickness of each metal layer was 0.018 mm. h is1＝0.127mm，h2＝0.127mm，h3＝0.526mm，d1＝0.94mm，d2＝0.3mm，d3＝d4＝0.6mm，w1＝0.6mm，w2＝0.43mm，w3＝3mm，l＝2.82mm，g＝0.1mm。
Fig. 3 is a cross-sectional electric field diagram of the vertical via structure at different positions. As can be seen from fig. 3, the electric field of the substrate integrated coaxial line is mainly concentrated in the middle, and when passing through the signal metal through holes with uneven diameters, the electric field is gradually distributed to both sides and then concentrated in the middle, and finally the transmission is transited to the coplanar waveguide.
FIG. 4 shows the return loss S of the vertical via structure11And transmission loss S21The results are shown in the figure. From DC to 50GHz, S21Can reach more than-0.25 dB, S11Less than-20 dB can be achieved.
As can be seen from fig. 3 and 4, the vertical switching structure provided by the present application has the characteristics of low reflection, simple structure, easy integration, and the like, and has a wide application prospect in the microwave band.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (6)
1. A vertical transition structure, comprising: the first upper metal layer, the first dielectric layer, the first lower metal layer, the signal metal through hole and the grounding metal through hole; the first dielectric layer is positioned between the first upper metal layer and the first lower metal layer;
the signal metal through hole is divided into two sections in the length direction, is a vertical step gradual change through hole, is positioned in the first dielectric layer, and has one end used for being vertically connected with a signal line of the coplanar waveguide on the first upper metal layer and the other end used for being vertically connected with a signal line of the substrate integrated coaxial line on the first dielectric layer; the uneven diameter of the signal metal through hole is set for realizing impedance matching between the substrate integrated coaxial line and the coplanar waveguide;
the grounding metal through holes are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple; the plurality of grounding metal through holes are arranged around the signal metal through holes, one end of each grounding metal through hole is connected with the first upper-layer metal layer, and the other end of each grounding metal through hole is connected with the first lower-layer metal layer.
2. The vertical via structure of claim 1, wherein the signal metal via comprises a plurality of metal via segments in a length direction, and diameters of adjacent metal via segments are different to achieve impedance matching between the substrate-integrated coaxial line and the coplanar waveguide.
3. The vertical via structure of claim 1, wherein the plurality of ground metal vias are distributed in a ring shape, and a center of the ring shape is a location of the signal metal via.
4. The vertical via of claim 1 or 3, wherein the ground metal vias are of equal diameter.
5. The vertical transition structure of claim 1, further comprising: and one end of the first connecting line is vertically connected with one end of the signal metal through hole, and the other end of the first connecting line is used for being connected with the signal line of the coplanar waveguide.
6. The vertical transition structure of claim 1, further comprising: and one end of the second connecting wire is vertically connected with the other end of the signal metal through hole, and the other end of the second connecting wire is used for being connected with a signal wire of the substrate integrated coaxial wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110825834.6A CN113540733B (en) | 2021-07-21 | 2021-07-21 | Vertical switching structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110825834.6A CN113540733B (en) | 2021-07-21 | 2021-07-21 | Vertical switching structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113540733A CN113540733A (en) | 2021-10-22 |
| CN113540733B true CN113540733B (en) | 2022-03-01 |
Family
ID=78129216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110825834.6A Active CN113540733B (en) | 2021-07-21 | 2021-07-21 | Vertical switching structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113540733B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116979255B (en) * | 2023-09-22 | 2023-12-19 | 浪潮(山东)计算机科技有限公司 | Grounding structure and signal device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2351975A1 (en) * | 2000-10-31 | 2002-04-30 | Mitsubishi Denki Kabushiki Kaisha | Vertical transition device for differential stripline paths and optical module |
| CN106953152A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The stepped power splitter of the integrated non-radiative Medium Wave Guide of substrate |
| CN107342446A (en) * | 2017-06-01 | 2017-11-10 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz substrate integration wave-guide microstrip transition structure |
| CN207852881U (en) * | 2017-12-07 | 2018-09-11 | 北京万集科技股份有限公司 | A kind of co-planar waveguide and ETC phased array antenna based on perpendicular interconnection technology |
| CN213184531U (en) * | 2020-10-22 | 2021-05-11 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Millimeter wave microstrip line vertical transition structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515682B (en) * | 2013-07-24 | 2015-07-29 | 中国电子科技集团公司第五十五研究所 | Multi-step formula substrate integration wave-guide realizes micro-vertical transition structure bringing to waveguide |
| CA3063768A1 (en) * | 2017-05-15 | 2018-11-22 | Valorbec Societe En Commandite | Contactless air-filled substrate integrated waveguide devices and methods |
-
2021
- 2021-07-21 CN CN202110825834.6A patent/CN113540733B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2351975A1 (en) * | 2000-10-31 | 2002-04-30 | Mitsubishi Denki Kabushiki Kaisha | Vertical transition device for differential stripline paths and optical module |
| CN106953152A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The stepped power splitter of the integrated non-radiative Medium Wave Guide of substrate |
| CN107342446A (en) * | 2017-06-01 | 2017-11-10 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz substrate integration wave-guide microstrip transition structure |
| CN207852881U (en) * | 2017-12-07 | 2018-09-11 | 北京万集科技股份有限公司 | A kind of co-planar waveguide and ETC phased array antenna based on perpendicular interconnection technology |
| CN213184531U (en) * | 2020-10-22 | 2021-05-11 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Millimeter wave microstrip line vertical transition structure |
Non-Patent Citations (2)
| Title |
|---|
| "Vertical microstrip transition for multilayer microwave circuits with decoupled passive and active layers";F.P.Casares-Miranda et al;《IEEE Microwave and wireless components letters》;20060626;第16卷(第7期);第401-403页 * |
| "一种微带线到带状线宽带垂直耦合过渡结构";张国忠等;《电子测量技术》;20160831(第8期);第19-21、26页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113540733A (en) | 2021-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10116031B2 (en) | Vertical-transition structure | |
| KR101399666B1 (en) | Broadband rf connector interconnect for multilayer electronic packages | |
| US7868257B2 (en) | Via transmission lines for multilayer printed circuit boards | |
| US11139548B2 (en) | Dual-mode monoblock dielectric filter and control elements | |
| US20110203843A1 (en) | Multilayer substrate | |
| US6602078B2 (en) | Electrical interconnect having a multi-layer circuit board structure and including a conductive spacer for impedance matching | |
| US8152534B1 (en) | Connector used for connecting a coaxial cable and a microstrip | |
| US20120056696A1 (en) | Connector | |
| CN102811549A (en) | Circuit board | |
| US20140342581A1 (en) | Vertical mount pcb coaxial connector | |
| CN113540733B (en) | Vertical switching structure | |
| WO2004017516A1 (en) | Matched transmission line connector | |
| US7002433B2 (en) | Microwave coupler | |
| CN100470924C (en) | Microstrip line type directional coupler and communication device using it | |
| US11490504B2 (en) | High-speed trace breakout methods and systems | |
| CN113285197B (en) | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof | |
| JP5950764B2 (en) | Printed wiring board | |
| CN111600103B (en) | Filter based on printed ridge gap waveguide | |
| CN109888491A (en) | Three beam antenna systems based on SIW | |
| CN112165175B (en) | Complementary artificial impedance interface electromagnetic wave transmission line with high transmission efficiency | |
| US7186927B2 (en) | High frequency via with stripped semi-rigid cable | |
| CN108963400B (en) | H-shaped mushroom-shaped ultra-wideband common mode noise suppression circuit | |
| CN113346213B (en) | Gradual change switching structure from strip line to coplanar waveguide | |
| CN212752719U (en) | Transmission line structure | |
| EP3824508A1 (en) | Balun and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |