CN113346213B - Gradual change switching structure from strip line to coplanar waveguide - Google Patents
Gradual change switching structure from strip line to coplanar waveguide Download PDFInfo
- Publication number
- CN113346213B CN113346213B CN202110735417.2A CN202110735417A CN113346213B CN 113346213 B CN113346213 B CN 113346213B CN 202110735417 A CN202110735417 A CN 202110735417A CN 113346213 B CN113346213 B CN 113346213B
- Authority
- CN
- China
- Prior art keywords
- conductor
- outer conductor
- coplanar waveguide
- upper layer
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
Abstract
The invention relates to a gradual change switching structure from a strip line to a coplanar waveguide, which comprises a gradual change strip line transition part and a coplanar waveguide transition part; the transition part of the gradual change strip line comprises a first upper layer outer conductor, a first inner conductor and a first lower layer outer conductor; the first upper layer outer conductor is provided with a nonlinear gradual change gap; the first inner conductor is a linear gradient conductor and is arranged below the nonlinear gradient gap; the coplanar waveguide transition part comprises a second upper layer outer conductor, a second inner conductor and a second lower layer outer conductor; one side of the tip of the nonlinear gradual change gap of the first upper layer outer conductor is used for connecting a strip line; one side of an opening of the nonlinear gradual change gap of the first upper layer outer conductor is connected with a second upper layer outer conductor; the second lower layer outer conductor of the coplanar waveguide transition part is connected with the lower layer conductor of the coplanar waveguide in a coplanar manner, and the dielectric substrate between the second lower layer outer conductor and the second inner conductor of the coplanar waveguide transition part is connected with the dielectric substrate of the coplanar waveguide. The invention improves the return loss.
Description
Technical Field
The invention relates to the technical field of microwave circuits, in particular to a gradual change switching structure from a strip line to a coplanar waveguide.
Background
With the development of integrated circuits, interconnect switching technology has been widely focused. The strip line is widely used in passive circuits due to its characteristics of good electromagnetic interference shielding performance and small dispersion, but the strip line cannot be directly connected with a surface circuit. Coplanar waveguides are widely used in surface circuits due to their low loss and low dispersion. Therefore, for high performance integration of passive circuits with surface circuits, a transition structure from stripline to coplanar waveguide with low reflection performance is required. At present, the electromagnetic field matching and impedance matching effects of the adopted switching structure are poor, and larger structural incontinuity exists.
Disclosure of Invention
The invention aims to provide a gradual change switching structure from a strip line to a coplanar waveguide, which improves return loss by improving electromagnetic field matching and impedance matching effects.
In order to achieve the purpose, the invention provides the following scheme:
a tapered transition structure from a stripline to a coplanar waveguide, comprising: a transition portion of the gradual change strip line and a transition portion of the coplanar waveguide; the transition part of the gradual change strip line is used for connecting a strip line, and the transition part of the coplanar waveguide is used for connecting a coplanar waveguide;
the transition part of the gradually-changed strip line comprises a first upper layer outer conductor, a first inner conductor and a first lower layer outer conductor; the first upper layer outer conductor is provided with a nonlinear gradual change gap, and the nonlinear gradual change gap divides the first upper layer outer conductor into a first conductor block and a second conductor block; the first inner conductor is a linear gradient conductor and is arranged below the nonlinear gradient gap; the width of the first inner conductor is linearly increased from the side of the tip of the nonlinear gradual change gap to the side of the opening of the nonlinear gradual change gap;
the coplanar waveguide transition part comprises a second upper layer outer conductor, a second inner conductor and a second lower layer outer conductor; the second upper layer outer conductor comprises a third conductor block and a fourth conductor block; the first lower-layer outer conductor and the second lower-layer outer conductor are connected in a coplanar manner to form an outer conductor lower layer; the first upper layer outer conductor and the second upper layer outer conductor are connected in a coplanar manner to form an outer conductor upper layer; the first inner conductor and the second inner conductor form an inner conductor layer, a first dielectric substrate is arranged between the upper layer of the outer conductor and the inner conductor layer, and a second dielectric substrate is arranged between the lower layer of the outer conductor and the inner conductor layer;
one side of the tip of the nonlinear gradual change gap of the first upper layer outer conductor is used for connecting a strip line; one side of the opening of the nonlinear gradual change gap of the first upper layer outer conductor is connected with the second upper layer outer conductor; the first conductor block is connected with the third conductor block, and the second conductor block is connected with the fourth conductor block; the second inner conductor comprises a fifth conductor block, a sixth conductor block and a seventh conductor block in one plane, the fifth conductor block and the sixth conductor block are arranged on two sides of the seventh conductor block, the fifth conductor block is arranged below the third conductor block, the sixth conductor block is arranged below the fourth conductor block, and the seventh conductor block is connected with the first inner conductor in a coplanar mode;
the second lower-layer outer conductor of the coplanar waveguide transition part is in coplanar connection with the lower-layer conductor of the coplanar waveguide, and the dielectric substrate between the second lower-layer outer conductor and the second inner conductor of the coplanar waveguide transition part is in coplanar connection with the dielectric substrate of the coplanar waveguide.
Optionally, the distance between the third conductor block and the fourth conductor block is the same as the width of the widest opening of the nonlinear tapered gap.
Optionally, the two rows of through holes arranged on the lower layer of the outer conductor and the two rows of through holes arranged on the upper layer of the outer conductor are correspondingly arranged, a cylindrical conductor perpendicular to the plane of the lower layer of the outer conductor and the plane of the upper layer of the outer conductor passes through the through holes to connect the lower layer of the outer conductor and the upper layer of the outer conductor, and the distance between the two rows of through holes is smaller than a set value.
Optionally, the first dielectric substrate and the second dielectric substrate are both Rogers RT/duroid4350 materials.
Optionally, the first dielectric substrate and the second dielectric substrate are bonded by a bonding medium RO 4450.
Optionally, the first dielectric substrate has a thickness of 0.254 mm.
Optionally, the second dielectric substrate has a thickness of 0.254 mm.
Optionally, the thickness of the bonding medium is 0.2 mm.
Optionally, the first dielectric substrate comprises a multilayer dielectric substrate.
Optionally, the second dielectric substrate comprises a multilayer dielectric substrate.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the gradient switching structure comprises a gradient stripline transition part and a coplanar waveguide transition part, and electric field matching and impedance matching of the stripline and the coplanar waveguide switching structure are realized through a nonlinear gradient gap on an upper layer outer conductor of the gradient stripline transition part, a linear gradient conductor and a first lower layer outer conductor of an inner conductor, and a second upper layer outer conductor, a second inner conductor and a second lower layer outer conductor of the coplanar waveguide transition part, so that the return loss is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a tapered transition from a stripline to a coplanar waveguide according to the present invention;
FIG. 2 is a schematic view of the layered structure of the upper layer of the outer conductor, the inner conductor layer and the lower layer of the outer conductor of the present invention;
FIG. 3 is a graph of electric field distribution at various locations in accordance with the present invention;
fig. 4 is a graph of scattering parameters during application of a graded transition structure from a stripline to a coplanar waveguide in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a gradual change switching structure from a strip line to a coplanar waveguide, which improves return loss by improving electromagnetic field matching and impedance matching effects.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic view of a gradual transition structure from a strip line to a coplanar waveguide, fig. 2 is a schematic view of a layered structure of an upper layer of an outer conductor, an inner conductor layer and a lower layer of the outer conductor, as shown in fig. 1-2, of the invention, and the gradual transition structure from the strip line to the coplanar waveguide comprises: a tapered stripline transition 100 and coplanar waveguide transition 200; the tapered stripline transition portion 100 is for connecting striplines and the coplanar waveguide transition portion 200 is for connecting coplanar waveguides. The transition portion 100 of the tapered stripline has a length of l1The length of the transition portion 200 of the coplanar waveguide is l2，
The transition part 100 of the gradual change strip line and the transition part 200 of the coplanar waveguide both comprise at least two layers of dielectric substrates and upper, middle and lower layers of metal arranged on the dielectric substrates; the upper layer metal 1 and the lower layer metal 5 form an outer conductor, namely an outer conductor upper layer and an outer conductor lower layer, and form an object placing space with the dielectric substrate, and the inner conductor layer is placed in the object placing space.
The transition portion 100 of the tapered stripline is connected to the dielectric substrate of the transition portion 200 of the coplanar waveguide, the outer conductor of the transition portion 100 of the tapered stripline is connected to the outer conductor of the transition portion 200 of the coplanar waveguide, and the inner conductor layer of the transition portion 100 of the tapered stripline is connected to the inner conductor layer of the transition portion 200 of the coplanar waveguide.
The transition part 100 of the gradient stripline comprises a first upper layer outer conductor, a first inner conductor and a first lower layer outer conductor, wherein the first upper layer outer conductor is provided with a nonlinear gradient gap 2, and the nonlinear gradient gap 2 divides the first upper layer outer conductor into a first conductor block 11 and a second conductor block 12; the first inner conductor is a linear gradient conductor 7 and is arranged below the nonlinear gradient gap 2; the width of the first inner conductor linearly increases from the tip side of the nonlinear gradient slit 2 to the opening side of the nonlinear gradient slit 2. The side of the first inner conductor having a smaller width is connected to the strip line.
Coplanar waveguide transition section 200 includes a second upper layer outer conductor, a second inner conductor, and a second lower layer outer conductor; the second upper outer conductor comprises a third conductor block 13 and a fourth conductor block 14; the first lower-layer outer conductor and the second lower-layer outer conductor are connected in a coplanar manner to form a lower layer of the outer conductor; the first upper layer outer conductor and the second upper layer outer conductor are connected in a coplanar manner to form an outer conductor upper layer. The first inner conductor and the second inner conductor form an inner conductor layer, a first dielectric substrate is arranged between the upper layer of the outer conductor and the inner conductor layer, and a second dielectric substrate is arranged between the lower layer of the outer conductor and the inner conductor layer;
one side of the tip of the nonlinear gradual change gap 2 of the first upper layer outer conductor is used for connecting a strip line; one side of the opening of the nonlinear gradual change gap 2 of the first upper layer outer conductor is connected with a second upper layer outer conductor; the first conductor block 11 is connected with a third conductor block 13, and the second conductor block 12 is connected with a fourth conductor block 14; the second inner conductor includes fifth conductor blocks 65, sixth conductor blocks 66 and seventh conductor blocks 67 in one plane, the fifth conductor blocks 65 and the sixth conductor blocks 66 are disposed on both sides of the seventh conductor block 67, the fifth conductor blocks 65 are disposed below the third conductor block 13, the sixth conductor blocks 66 are disposed below the fourth conductor block 14, and the seventh conductor blocks 67 are connected coplanar with the first inner conductor.
The seventh conductor block 67 is a set distance from the fifth conductor block 65 and the sixth conductor block 66.
The second lower-layer outer conductor of the coplanar waveguide transition portion 200 is connected with the lower-layer conductor of the coplanar waveguide in a coplanar manner, and the dielectric substrate between the second lower-layer outer conductor and the second inner conductor of the coplanar waveguide transition portion 200 is connected with the dielectric substrate of the coplanar waveguide.
The second inner conductor of the transition portion 200 of the coplanar waveguide is connected coplanar with the upper conductor of the coplanar waveguide.
The distance between the third conductor block 13 and the fourth conductor block 14 is the same as the width of the widest opening of the nonlinear graded gap 2.
Two rows of through holes 4 are formed in the lower layer of the outer conductor and the upper layer of the outer conductor, and the upper layer of the outer conductor is connected with the lower layer of the outer conductor through the through holes 4.
Two rows of through holes 4 arranged on the lower layer of the outer conductor are arranged corresponding to two rows of through holes 4 arranged on the upper layer of the outer conductor, and a cylindrical conductor perpendicular to the plane of the lower layer of the outer conductor and the plane of the upper layer of the outer conductor penetrates through the through holes 4 to be connected with the lower layer of the outer conductor and the upper layer of the outer conductor. The two rows of through holes arranged on the upper layer of the outer conductor comprise a first row of through holes and a second row of through holes, and the two rows of through holes arranged on the lower layer of the outer conductor comprise a third row of through holes and a third row of through holes;
the first row of through holes and the third row of through holes are connected through cylindrical conductors, the second row of through holes and the fourth row of through holes are connected through cylindrical conductors, and all the cylindrical conductors of the connecting through holes are parallel to each other.
The distance between the two rows of through holes 4 arranged on the upper layer of the outer conductor is the same as the distance between the two rows of through holes 4 arranged on the lower layer of the outer conductor, the distance between the two rows of through holes 4 is smaller than a set value lambda/2, lambda is a set wavelength and is determined by the frequency of an electromagnetic field.
The width of the strip line is w1. The width of the coplanar waveguide is w2The width of the gap between the coplanar waveguide and the inner conductors on both sides is s2。
The upper layer metal (first upper layer outer conductor) of the transition part 100 of the gradient strip line etches a nonlinear gradient gap 2, the inner conductor (first inner conductor) is a linear gradient conductor 7, and the width of the first inner conductor is from w1To w2A linear change; by designing the width of the nonlinear tapered slot 2, impedance matching of the connected strip line with the coplanar waveguide transition section 200 is achieved.
The coplanar waveguide transition section 200 attaches two ground planes 3 to the upper level metal (third conductor block 13 and fourth conductor block 14); the distance between the two additional ground planes is the same as the width of the end of the nonlinear gradual change gap 2 of the gradual change strip line transition part 100, and is b; coplanar waveguide slot width s by designing the inner conductor1Realizing impedance matching; the lower layer metal and the inner conductor of the coplanar waveguide transition part 200 are respectively connected with the two layers of metal of the coplanar waveguide; the dielectric substrate of the transition portion 200 of the coplanar waveguide and the dielectric substrate of the coplanar waveguide form a step shape at the junction.
Taking the adapting structure processed by the PCB process of the present invention as an example, the first dielectric substrate and the second dielectric substrate are both Rogers RT/duroid4350 materials (dielectric constant 3.48, dielectric loss tangent 0.0037). The first dielectric substrate and the second dielectric substrate are bonded by a bonding medium RO4450 (dielectric constant 3.52, dielectric loss tangent 0.0041). The thickness of the first dielectric substrate is 0.254 mm. The thickness of the second dielectric substrate is 0.254mm and the thickness of the bonding medium is 0.2 mm. The metal thickness (all conductors in the upper layer of the outer conductor, the inner conductor layer and the lower layer of the outer conductor) was 0.018 mm. l1＝1.5mm，l2＝0.65mm，w1＝0.34mm，w2＝0.44mm，s2＝0.14mm，b＝2.2mm，s1＝1mm。
As a specific embodiment, the first dielectric substrate comprises a multilayer dielectric substrate.
As a specific embodiment, the second dielectric substrate comprises a multilayer dielectric substrate.
Fig. 3 is a cross-sectional electric field diagram of a graded transition from stripline to coplanar waveguide at different positions according to the present invention. The electric field increases from bottom to top at the leftmost side in fig. 3, the electric field increases from outside to inside at each position of the cross section (a '-a, B' -B, C '-C, and D' -D) in fig. 3, and the electric field of the strip line is mainly concentrated in the middle. After passing through the transition portion 100 of the gradual change strip line and the transition portion 200 of the coplanar waveguide, the electric field is gradually distributed to both sides. Ultimately transitioning to the field distribution of the coplanar waveguide.
FIG. 4 is a graph showing the results of scattering parameters including return loss and insertion loss, | S, of a horizontally graded transition structure from a stripline to a coplanar waveguide according to the present invention11I is return loss, | S21And | is insertion loss. The electric signal input to the gradual change switching structure is from direct current to 60GHz, S21Can reach more than-0.5 dB, S11Less than-25 dB can be achieved.
In conclusion, the horizontal gradual change switching structure from the strip line to the coplanar waveguide has the advantages of low reflection, simple structure, easy integration, convenient manufacture, wide application range and wide application prospect in the microwave band.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A tapered transition structure from a stripline to a coplanar waveguide, comprising: a transition portion of the gradual change strip line and a transition portion of the coplanar waveguide; the transition part of the gradual change strip line is used for connecting a strip line, and the transition part of the coplanar waveguide is used for connecting a coplanar waveguide;
the transition part of the gradually-changed strip line comprises a first upper layer outer conductor, a first inner conductor and a first lower layer outer conductor; the first upper layer outer conductor is provided with a nonlinear gradual change gap, and the nonlinear gradual change gap divides the first upper layer outer conductor into a first conductor block and a second conductor block; the first inner conductor is a linear gradient conductor and is arranged below the nonlinear gradient gap; the width of the first inner conductor is linearly increased from the side of the tip of the nonlinear gradual change gap to the side of the opening of the nonlinear gradual change gap;
the coplanar waveguide transition part comprises a second upper layer outer conductor, a second inner conductor and a second lower layer outer conductor; the second upper layer outer conductor comprises a third conductor block and a fourth conductor block; the first lower-layer outer conductor and the second lower-layer outer conductor are connected in a coplanar manner to form an outer conductor lower layer; the first upper layer outer conductor and the second upper layer outer conductor are connected in a coplanar manner to form an outer conductor upper layer; the first inner conductor and the second inner conductor form an inner conductor layer, a first dielectric substrate is arranged between the upper layer of the outer conductor and the inner conductor layer, and a second dielectric substrate is arranged between the lower layer of the outer conductor and the inner conductor layer;
one side of the tip of the nonlinear gradual change gap of the first upper layer outer conductor is used for connecting a strip line; one side of the opening of the nonlinear gradual change gap of the first upper layer outer conductor is connected with the second upper layer outer conductor; the first conductor block is connected with the third conductor block, and the second conductor block is connected with the fourth conductor block; the second inner conductor comprises a fifth conductor block, a sixth conductor block and a seventh conductor block in one plane, the fifth conductor block and the sixth conductor block are arranged on two sides of the seventh conductor block, the fifth conductor block is arranged below the third conductor block, the sixth conductor block is arranged below the fourth conductor block, and the seventh conductor block is connected with the first inner conductor in a coplanar mode;
the second lower-layer outer conductor of the coplanar waveguide transition part is in coplanar connection with the lower-layer conductor of the coplanar waveguide, and the dielectric substrate between the second lower-layer outer conductor and the second inner conductor of the coplanar waveguide transition part is in coplanar connection with the dielectric substrate of the coplanar waveguide.
2. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the distance between the third and fourth conductor blocks is the same as the width at the widest opening of the nonlinear tapered slot.
3. The tapered transition structure from a stripline to a coplanar waveguide as recited in claim 1, wherein two rows of through holes provided on the lower layer of the outer conductor are provided corresponding to two rows of through holes provided on the upper layer of the outer conductor, a cylindrical conductor perpendicular to the plane of the lower layer of the outer conductor and the plane of the upper layer of the outer conductor passes through the through holes to connect the lower layer of the outer conductor and the upper layer of the outer conductor, and the distance between the two rows of through holes is smaller than a predetermined value.
4. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the first and second dielectric substrates are both Rogers RT/duroid4350 material.
5. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the first dielectric substrate and the second dielectric substrate are bonded by a bonding medium RO 4450.
6. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the first dielectric substrate has a thickness of 0.254 mm.
7. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the thickness of the second dielectric substrate is 0.254 mm.
8. The tapered transition structure from a stripline to a coplanar waveguide of claim 5, wherein the thickness of the bonding medium is 0.2 mm.
9. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the first dielectric substrate comprises a multilayer dielectric substrate.
10. The tapered transition structure from a stripline to a coplanar waveguide of claim 1, wherein the second dielectric substrate comprises a multilayer dielectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110735417.2A CN113346213B (en) | 2021-06-30 | 2021-06-30 | Gradual change switching structure from strip line to coplanar waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110735417.2A CN113346213B (en) | 2021-06-30 | 2021-06-30 | Gradual change switching structure from strip line to coplanar waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113346213A CN113346213A (en) | 2021-09-03 |
| CN113346213B true CN113346213B (en) | 2022-02-08 |
Family
ID=77481700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110735417.2A Active CN113346213B (en) | 2021-06-30 | 2021-06-30 | Gradual change switching structure from strip line to coplanar waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113346213B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4252195B2 (en) * | 2000-06-27 | 2009-04-08 | 新日本無線株式会社 | High frequency line converter |
| US7315223B2 (en) * | 2004-06-30 | 2008-01-01 | Emag Technologies, Inc. | Microstrip-to-microstrip RF transition including co-planar waveguide connected by vias |
| CN102074772B (en) * | 2011-01-07 | 2014-01-29 | 中国电子科技集团公司第十研究所 | Strip line waveguide switch |
| CN107369917B (en) * | 2017-09-22 | 2019-06-04 | 电子科技大学 | A kind of narrow slot ultra-wideband antenna |
| CN109830790B (en) * | 2019-03-11 | 2020-09-08 | 南京理工大学 | Totally-enclosed coplanar integrated waveguide-to-strip line transition device |
-
2021
- 2021-06-30 CN CN202110735417.2A patent/CN113346213B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113346213A (en) | 2021-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Grigoropoulos et al. | Substrate integrated folded waveguides (SIFW) and filters | |
| CN106099291B (en) | A kind of integrated gap waveguide structure of bending micro-strip ridge substrate | |
| EP2843758A1 (en) | Multi-layer circuit board with waveguide to microstrip transition structure | |
| Tong et al. | A vertical transition between rectangular waveguide and coupled microstrip lines | |
| CN108172958B (en) | Periodic slow wave transmission line unit based on coplanar waveguide | |
| CN108777343B (en) | Substrate integrated waveguide transmission structure, antenna structure and connection method | |
| CN103326093A (en) | Novel cross coupling substrate integrated waveguide band-pass filter | |
| CN110190367B (en) | Ultra-wideband differential line common mode noise filter | |
| US10128557B2 (en) | Chip-to-chip interface comprising a microstrip circuit to waveguide transition having an emitting patch | |
| KR20050064562A (en) | Microstrip band pass filter using end-coupled sirs | |
| US9054404B2 (en) | Multi-layer circuit board with waveguide to microstrip transition structure | |
| US7002433B2 (en) | Microwave coupler | |
| CN113285197B (en) | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof | |
| US4288761A (en) | Microstrip coupler for microwave signals | |
| Moscoso-Martir et al. | High performance multi-section corrugated slot-coupled directional couplers | |
| CN113346213B (en) | Gradual change switching structure from strip line to coplanar waveguide | |
| Tsai et al. | Novel broadband transition for rectangular dielectric waveguide to planar circuit board at D band | |
| CN113540733B (en) | Vertical switching structure | |
| CN110061336A (en) | Four power splitter of integral substrate gap waveguide of encapsulation | |
| Mohammadi et al. | Two layers substrate integrated waveguide power divider | |
| JP2000252704A (en) | Dielectric filter | |
| Rave et al. | A substrate integrated matched load with embedded resistive thick film | |
| JP2012049592A (en) | Nonreflective termination resistor circuit | |
| KR100907270B1 (en) | Millimeter-wave wideband band pass filter using microstrip lines | |
| Rave et al. | A multilayer substrate integrated 3 dB power divider with embedded thick film resistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |