CN113529162A - Graphite crucible and device for preventing deformation of quartz crucible - Google Patents
Graphite crucible and device for preventing deformation of quartz crucible Download PDFInfo
- Publication number
- CN113529162A CN113529162A CN202110812626.2A CN202110812626A CN113529162A CN 113529162 A CN113529162 A CN 113529162A CN 202110812626 A CN202110812626 A CN 202110812626A CN 113529162 A CN113529162 A CN 113529162A
- Authority
- CN
- China
- Prior art keywords
- sub
- groove
- graphite crucible
- crucible
- joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 58
- 239000010439 graphite Substances 0.000 title claims abstract description 58
- 239000010453 quartz Substances 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000005452 bending Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 241000446313 Lamella Species 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
The invention relates to a graphite crucible, which comprises a plurality of petal bodies, wherein a joint is arranged between every two adjacent petal bodies, each petal body comprises a contact surface for contacting with a quartz crucible, a groove communicated with the joint is arranged on the contact surface, and at least part of the groove is positioned at the bending part of the corresponding petal body. The invention also relates to a device for preventing the quartz crucible from deforming. Through the setting of graphite crucible upper groove, increase gas passage, can effectually discharge because of the gaseous of impurity production, avoid effectively guaranteeing the crystal bar quality and reducing the risk of thermal field damage because the crucible that gaseous can not in time escape and lead to warp.
Description
Technical Field
The invention relates to the field of single crystal production equipment, in particular to a graphite crucible and a device for preventing a quartz crucible from deforming.
Background
Quartz crucibles and graphite crucibles are extremely important thermal field elements in crystal pulling furnaces, and both of them play a very critical role in the yield of grown crystals and the quality of crystal rods.
In the production of silicon single crystal by the CZ method, the quartz crucible exhibits a softening phenomenon at a high temperature. At the moment, the graphite crucible can play a good supporting role for the quartz crucible on one hand. On the other hand, the graphite crucible has excellent high-temperature mechanical and heat transfer properties and can be used for multiple times. The graphite crucible bottom is thick for the purpose of thermal insulation to ensure that the silicon solution temperature at the bottom is higher than the liquid surface temperature. After the crystal bar is pulled, a small amount of polycrystalline silicon solution is still left at the bottom of the crucible, and during solidification, the polycrystalline silicon expands in volume, so that the crucible is broken. Therefore, the graphite crucible is generally designed in two or three pieces, and the stress applied to the graphite crucible when the silicon is solidified can be released by the gaps between the pieces.
In the case of high temperature, the quartz crucible is softened and closely attached to the graphite crucible, and gas generated from impurities is generated in the quartz crucible and the graphite crucible, and the quartz crucible is likely to bulge due to untimely gas escape. In the process of drawing the crystal bar, the heat shield and the bulge are easy to rub to influence the stability of the thermal field and the production safety. Meanwhile, certain influence is brought to the quality of the crystal bar. The problem of gas escape can be better solved by improving the graphite crucible.
Disclosure of Invention
In order to solve the above-mentioned problems, the present invention provides a graphite crucible and an apparatus for preventing deformation of a quartz crucible,
in order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: the utility model provides a graphite crucible, includes a plurality of lamella bodies, has the seam between two adjacent lamella bodies, and every lamella body is including the contact surface that is used for with quartz crucible contact, be provided with on the contact surface with the recess of seam intercommunication, at least part the recess is located correspondingly the flexion of lamella body.
Optionally, the groove includes a first sub-groove and a second sub-groove that intersect and communicate with each other, a first end of the first sub-groove is close to the top of the graphite crucible, a second end of the first sub-groove extends to the joint in a direction away from the top of the graphite crucible, the second sub-groove is located at a corresponding curved portion of the petal body, and the second sub-groove extends along a circumferential direction of the graphite crucible.
Optionally, the first end of the first sub-groove is located at a junction of a vertical portion and a curved portion of the graphite crucible.
Optionally, the first end of the first sub-groove is rectangular or rounded in profile.
Optionally, the cross section of the second sub-groove is arc-shaped or rectangular.
Optionally, each flap body is provided with at least one first sub-groove.
Optionally, each flap body is provided with at least two first sub-grooves, and the second ends of the at least two second sub-grooves intersect at the seam.
Optionally, the second sub-grooves on the plurality of petals are connected end to form an annular structure.
Optionally, the graphite crucible includes two the petal body, two on the petal body the recess with two between the petal body the seam is symmetry axis symmetry setting.
The embodiment of the invention also provides a device for preventing the quartz crucible from deforming, which comprises the graphite crucible, wherein the quartz crucible is arranged in the graphite crucible.
The invention has the beneficial effects that: through the setting of graphite crucible upper groove, increase gas passage, can effectually discharge because of the gaseous of impurity production, avoid effectively guaranteeing the crystal bar quality and reducing the risk of thermal field damage because the crucible that gaseous can not in time escape and lead to warp.
Drawings
FIG. 1 is a schematic view showing the structure of a graphite crucible in an embodiment of the present invention;
FIG. 2 is a schematic view showing the construction of an apparatus for preventing deformation of a quartz crucible in the embodiment of the present invention;
FIG. 3 shows an enlarged view A of FIG. 2;
FIG. 4 shows an enlarged schematic view II at A of FIG. 2;
FIG. 5 is a first enlarged view of FIG. 2 at B;
fig. 6 shows an enlarged schematic view B of fig. 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 1 to 6, an embodiment of the present invention provides a graphite crucible 4, which includes a plurality of petals, a seam is provided between two adjacent petals, each petal includes a contact surface for contacting with a quartz crucible 3, a groove is provided on the contact surface, the groove is communicated with the seam, and at least a part of the groove is located at a curved portion of the corresponding petal.
In the crystal growth process, the quartz crucible 3 is easy to deform due to the influence of gas generation and temperature, the crystal growth is influenced, and the thermal field is damaged in serious cases to destroy the quality of the crystal bar.
Through processing 4 fluting to graphite crucible, increase gas passage, can effectually discharge because of the gaseous of impurity production, avoid effectively guaranteeing the crystal bar quality and reducing the risk of thermal field damage because the crucible that gaseous can not in time escape and lead to warp.
Generally, the bulge deformation of the quartz crucible 3 due to the gas being unable to be discharged often occurs at the R portion (bent portion) of the quartz crucible 3, and in the present embodiment, at least a portion of the groove is located at the corresponding bent portion of the flap body, so that the generated impurity gas can effectively escape through the groove, and the bulge deformation problem of the quartz crucible 3 is solved. And can bring positive influence to the quality of the crystal bar.
In this embodiment, for example, the groove includes a first sub-groove 1 and a second sub-groove 2 that intersect and communicate with each other, a first end of the first sub-groove 1 is close to the top of the graphite crucible 4, a second end of the first sub-groove 1 extends to the joint in a direction away from the top of the graphite crucible 4, the second sub-groove 2 is located at a corresponding bending portion of the petal body, and the second sub-groove 2 extends along the circumferential direction of the graphite crucible 4.
The first sub-groove 1 and the second sub-groove 2 extend along different directions, and the first sub-groove 1 and the second sub-groove 2 are communicated with each other to effectively discharge gas.
In the present embodiment, the first end of the first sub-groove 1 is located at the intersection of the vertical part and the bent part of the graphite crucible 4.
The joint of the vertical part and the bending part of the graphite crucible 4 is easy to bulge due to gas, so that the first sub-groove 1 is arranged at the joint of the vertical part and the bending part of the graphite crucible 4 to discharge the gas, thereby effectively preventing the deformation of the quartz crucible 3.
Fig. 3 and 4 are enlarged schematic views of a point a (indicated by reference numeral 5) in fig. 2, and the first end of the first sub-groove 1 is, for example, in the present embodiment, right-angled or rounded in profile.
Referring to fig. 3, in the embodiment, preferably, the first end of the first sub-groove 1 is a rounded corner, which can effectively reduce the hard contact between the quartz crucible 3 and the graphite crucible 4 caused by high temperature deformation.
Fig. 5 and 6 are enlarged schematic views at B (reference numeral 6) of fig. 2, and the cross section of the second sub-groove 2 is arc-shaped or rectangular in the embodiment as an example.
Referring to fig. 5, in the embodiment, preferably, the cross section of the second sub-groove 2 is arc-shaped, which can effectively reduce the hard contact between the quartz crucible 3 and the graphite crucible 4 caused by high-temperature deformation.
In this embodiment, for example, a joint of the first sub-groove 1 and the second sub-groove 2 is a rounded corner, that is, the joint of the first sub-groove 1 and the second sub-groove 2 is in smooth transition, so as to facilitate the flow of gas and reduce the resistance, referring to fig. 1.
In this embodiment, for example, each flap body is provided with at least one first sub-groove 1.
The number of the first sub-grooves 1 can be set according to actual needs, and the more the number of the first sub-grooves 1 is, the more the gas channels are, so that the gas is discharged.
In this embodiment, for example, each flap body is provided with at least two first sub-grooves 1, and the second ends of at least two second sub-grooves 2 intersect at the seam.
The bottom of the graphite crucible 4 is spherical, and the extending direction of each second sub-groove 2 passes through the center of the bottom of the graphite crucible 4, so that the gas flow path is reduced, and the gas is discharged conveniently.
In this embodiment, for example, the second sub-grooves 2 on the plurality of petals are connected end to form an annular structure.
The structure that constitutes graphite crucible 4's lamella body is the same, second sub-recess 2 is located the handing-over department of graphite crucible 4's vertical portion and flexion, the position that quartz crucible 3 takes place to swell easily and warp promptly, the effectual deformation that prevents quartz crucible 3, consequently, it is a plurality of on the lamella body second sub-recess 2 end to end forms an annular structure, and effectual exhaust prevents the deformation of quartz crucible 3.
Referring to fig. 1 and 2, in this embodiment, for example, the graphite crucible 4 includes two lobes, and the grooves on the two lobes are symmetrically disposed with the joint between the two lobes as a symmetry axis.
In this embodiment, for example, the width of the first sub-groove 1 is the same as the width of the second sub-groove 2, and the width of the first sub-groove 1 is 1-2 mm.
In this embodiment, for example, the depth of the first sub-groove 1 is the same as the depth of the second sub-groove 2, the depth of the first sub-groove 1 is 0.4-0.6mm, and preferably, the depth of the first sub-groove 1 is 0.5 mm.
The embodiment of the invention also provides a device for preventing the quartz crucible 3 from deforming, which comprises the graphite crucible 4, wherein the quartz crucible 3 is arranged in the graphite crucible 4.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The graphite crucible is characterized by comprising a plurality of petal bodies, a joint is arranged between every two adjacent petal bodies, each petal body comprises a contact surface used for being in contact with a quartz crucible, a groove communicated with the joint is formed in the contact surface, and at least part of the groove is located in the corresponding bending part of the petal body.
2. The graphite crucible of claim 1, wherein the groove comprises a first sub-groove and a second sub-groove which intersect and communicate with each other, a first end of the first sub-groove is disposed near the top of the graphite crucible, a second end of the first sub-groove extends to the joint in a direction away from the top of the graphite crucible, the second sub-groove is located at a bent portion of the corresponding petal body, and the second sub-groove extends along a circumferential direction of the graphite crucible.
3. The graphite crucible of claim 2, wherein the first end of the first sub-groove is located at an intersection of a vertical portion and a curved portion of the graphite crucible.
4. The graphite crucible of claim 2, wherein the first end of the first sub-groove is contoured as a right angle or a rounded corner.
5. The graphite crucible of claim 2, wherein the second sub-groove is arc-shaped or rectangular in cross-section.
6. The graphite crucible of claim 2, wherein at least one of the first sub-grooves is disposed on each lobe.
7. The graphite crucible of claim 2, wherein at least two of the first sub-grooves are disposed on each petal body, and the second ends of at least two of the second sub-grooves intersect at the joint.
8. The graphite crucible of claim 2, wherein the second sub-grooves of the petals are connected end to form an annular structure.
9. The graphite crucible of claim 2, wherein the graphite crucible comprises two lobes, and the grooves on the two lobes are symmetrically arranged with the joint between the two lobes as an axis of symmetry.
10. An apparatus for preventing deformation of a quartz crucible, comprising the graphite crucible as set forth in any one of claims 1 to 9, wherein the quartz crucible is disposed in the graphite crucible.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110812626.2A CN113529162A (en) | 2021-07-19 | 2021-07-19 | Graphite crucible and device for preventing deformation of quartz crucible |
| TW111125706A TW202242206A (en) | 2021-07-19 | 2022-07-08 | Graphite crucible and device for preventing deformation of quartz crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110812626.2A CN113529162A (en) | 2021-07-19 | 2021-07-19 | Graphite crucible and device for preventing deformation of quartz crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113529162A true CN113529162A (en) | 2021-10-22 |
Family
ID=78128669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110812626.2A Pending CN113529162A (en) | 2021-07-19 | 2021-07-19 | Graphite crucible and device for preventing deformation of quartz crucible |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113529162A (en) |
| TW (1) | TW202242206A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10297992A (en) * | 1997-04-25 | 1998-11-10 | Sumitomo Metal Ind Ltd | Crucible for pulling crystal and part for pulling crystal |
| JP2008201619A (en) * | 2007-02-20 | 2008-09-04 | Shin Etsu Handotai Co Ltd | Graphite crucible and apparatus for manufacturing silicon single crystal with it |
| CN203333813U (en) * | 2013-06-06 | 2013-12-11 | 英利能源（中国）有限公司 | Mono-crystal furnace heat field graphite crucible with gas vents |
| KR20160016251A (en) * | 2014-08-04 | 2016-02-15 | 주식회사 엘지실트론 | Crucible and ingot growing apparutus having the same |
-
2021
- 2021-07-19 CN CN202110812626.2A patent/CN113529162A/en active Pending
-
2022
- 2022-07-08 TW TW111125706A patent/TW202242206A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10297992A (en) * | 1997-04-25 | 1998-11-10 | Sumitomo Metal Ind Ltd | Crucible for pulling crystal and part for pulling crystal |
| JP2008201619A (en) * | 2007-02-20 | 2008-09-04 | Shin Etsu Handotai Co Ltd | Graphite crucible and apparatus for manufacturing silicon single crystal with it |
| CN203333813U (en) * | 2013-06-06 | 2013-12-11 | 英利能源（中国）有限公司 | Mono-crystal furnace heat field graphite crucible with gas vents |
| KR20160016251A (en) * | 2014-08-04 | 2016-02-15 | 주식회사 엘지실트론 | Crucible and ingot growing apparutus having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202242206A (en) | 2022-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4888242A (en) | Graphite sheet material | |
| JP5904079B2 (en) | Silicon single crystal growing apparatus and silicon single crystal growing method | |
| CN206015144U (en) | Graphite heater for czochralski crystal growing furnace | |
| CN214529320U (en) | Single crystal furnace | |
| CN113529162A (en) | Graphite crucible and device for preventing deformation of quartz crucible | |
| CN111850677A (en) | Crystal pulling furnace | |
| JPWO2018181981A1 (en) | Tubular sapphire member, heat exchanger, semiconductor manufacturing apparatus, and method for manufacturing tubular sapphire member | |
| CN212840144U (en) | Heat insulation structure in draft tube | |
| WO2023185536A1 (en) | Draft tube for pulling of single crystals and single crystal furnace provided with same | |
| WO2023029708A1 (en) | Heater and single crystal furnace thermal field | |
| CN115787070A (en) | Crucible, crucible assembly and single crystal furnace | |
| JP3508877B2 (en) | Silicon melting equipment | |
| CN107809809A (en) | A kind of band timber-used large high-temperature heater | |
| CN209418474U (en) | A kind of integral type silicon boat | |
| CN219508065U (en) | Guide cylinder for manufacturing single crystal by Czochralski method and single crystal furnace | |
| CN220116724U (en) | Crucible positioning device and crucible assembly | |
| CN217556358U (en) | Graphite heater beneficial to growth of silicon carbide single crystal | |
| CN114075692A (en) | Single crystal furnace thermal field heater and single crystal furnace | |
| JP2945661B1 (en) | Semiconductor manufacturing equipment | |
| CN209906926U (en) | A protection device for draft tube | |
| JP3332168B2 (en) | Vertical boat and manufacturing method thereof | |
| CN219059210U (en) | External waste discharge pipe of quartz tube | |
| CN219951288U (en) | Split main heater of single crystal furnace | |
| CN220099262U (en) | Heat exchange device and single crystal furnace | |
| CN218621121U (en) | Novel guide cylinder |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211022 |
|
| RJ01 | Rejection of invention patent application after publication |