KR20160016251A - Crucible and ingot growing apparutus having the same - Google Patents

Crucible and ingot growing apparutus having the same Download PDF

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Publication number
KR20160016251A
KR20160016251A KR1020140099964A KR20140099964A KR20160016251A KR 20160016251 A KR20160016251 A KR 20160016251A KR 1020140099964 A KR1020140099964 A KR 1020140099964A KR 20140099964 A KR20140099964 A KR 20140099964A KR 20160016251 A KR20160016251 A KR 20160016251A
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South Korea
Prior art keywords
slit
graphite crucible
crucible
width
hole
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KR1020140099964A
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Korean (ko)
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이송언
이상준
이종은
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주식회사 엘지실트론
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Priority to KR1020140099964A priority Critical patent/KR20160016251A/en
Publication of KR20160016251A publication Critical patent/KR20160016251A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

An embodiment of the present invention relates to a graphite crucible which is disposed inside an ingot growing apparatus, and accommodates a quartz crucible. The graphite crucible comprises: a bottom surface; a side wall disposed on an outer circumference of the bottom surface; a corner unit which concavely connects the bottom surface with the side wall; and at least one through hole which penetrates the side wall, the corner unit or the side wall and an outer surface and an inner surface of the corner unit. According to the embodiment, damage to the graphite crucible can be prevented by discharging gas permeated between the quartz crucible and the graphite crucible through a silt (or the through hole) formed on the graphite crucible. In addition, the silt formed on the graphite crucible can smoothly discharge the gas, and can prevent deformation of the quartz crucible by differently forming the width of the outer surface and the inner surface.

Description

TECHNICAL FIELD [0001] The present invention relates to a graphite crucible, and a crucible and ingot growing apparats having the same.

The present invention relates to an ingot growing apparatus for producing a single crystal silicon ingot, and more particularly to an ingot growing apparatus capable of further improving the lifetime of a graphite crucible.

BACKGROUND ART [0002] As silicon wafers for semiconductor device fabrication continue to increase in size, most silicon wafers are produced from silicon single crystal ingots grown by the Czochralski (CZ) method.

In the CZ method, polysilicon is charged into a quartz crucible, heated by a graphite heating element to melt the crystal, and seed crystals are brought into contact with the silicon melt formed as a result of the melting so that crystallization occurs at the interface, Thereby growing a silicon single crystal ingot having a desired diameter.

The upper and lower sides of the graphite crucible supporting the quartz crucible are exposed to the outside when the polysilicon in the quartz crucible is melted and during the single crystal growth step, and the heat conductivity of the exposed crucible is high, There is a problem that the heat of the heat exchanger is lost.

In addition, in order to compensate for heat loss, deterioration concentrates on the corner between the upper and lower sides of the graphite crucible when the heater power rises, and damage due to such deterioration occurs intensively at the corner portion, But the life of the quartz crucible is shortened.

Further, when melting the silicon, the silicon melt and the quartz crucible react with each other to generate SiO gas. This SiO gas is exhausted out of the chamber by a vacuum pump together with Ar gas in the chamber, but a part of the SiO gas enters the gap between the graphite crucible and the quartz crucible, and SiO and the C of the graphite crucible react with each other to progress the SiC transformation of the graphite crucible. SiC and C are significantly different in thermal expansion coefficient, so that stress due to the difference in thermal expansion occurs during cooling / heating of the graphite crucible, so that the graphite crucible becomes durable and becomes cracked.

In addition, the SiC layer of the graphite crucible reacts with SiO 2 of the quartz crucible to generate SiO 2 and CO gas, and the graphite crucible is etched by the flow of these gases.

Particularly, at the corner of the graphite crucible, a bottleneck of the gas occurs, and the flow of the gas is intensively generated. As described above, the deterioration also concentrates and cracks occur in the horizontal direction due to the etching.

Such cracking of the graphite crucible shortens the lifetime of the graphite crucible and deforms the shape of the quartz crucible located inside the graphite crucible, resulting in a loss of the process.

The embodiment attempts to suppress the occurrence of cracks at the corners of the graphite crucible in the past to increase the lifetime of the graphite crucible and to stabilize the growth quality of the silicon single crystal ingot.

An embodiment is a graphite crucible disposed inside of an ingot growing apparatus and containing a quartz crucible, comprising: a bottom surface; A side wall disposed on an outer periphery of the bottom surface; A corner portion concavely connecting the side wall and the bottom surface; And at least one through hole passing through the side wall, the corner portion, or the outer side surface and the inner side surface of the side wall and the corner portion.

According to the proposed embodiment, there is an advantage in that damage to the graphite crucible can be prevented by discharging the gas impregnated between the quartz crucible and the graphite crucible with slits (or through holes) formed in the graphite crucible.

Further, the slits formed in the graphite crucible of the embodiment have different widths from the outer side to the inner side so that gas can be discharged more smoothly and deformation of the quartz crucible can be prevented.

1 is a view showing an ingot growing apparatus according to an embodiment.
2 is a perspective view of a conventional graphite crucible.
Fig. 3 is a graphite crucible according to the first embodiment, Fig. 3 (a) is a perspective view of a graphite crucible, and Fig. 3 (b) is a cross-sectional view of a graphite crucible.
4 is a side view of the graphite crucible according to the second embodiment.
Fig. 5 shows a perspective view of a graphite crucible according to the third embodiment and an enlarged cross-sectional view of xy in a perspective view.
Fig. 6 shows the state after using the graphite crucible formed according to the third embodiment.
Fig. 7 shows a quartz crucible accommodated inside a graphite crucible formed according to the third embodiment.
8 shows a perspective view of a graphite crucible according to the fourth embodiment and an enlarged cross-sectional view of the XY part of the perspective view.
9 shows a cross-sectional view of the slit according to the fifth embodiment.
10 shows a cross-section of the slit according to the sixth embodiment.
11 shows a cross-sectional view of the slit according to the seventh embodiment.
12 shows a process of forming a slit according to the fourth embodiment.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

1 is a view showing an ingot growing apparatus according to an embodiment.

1, the ingot growing apparatus according to the embodiment includes a quartz crucible 200 for holding a silicon melt, a graphite crucible 100 for supporting the quartz crucible 200, a heater unit 300 for applying heat to the graphite crucible 100, A side heat insulating part 600 and an upper heat insulating part 700 for insulating the heat of the hot zone structure from the outside, a seed chuck 800 for receiving a seed for growing an ingot from the silicon melt, 800 and a seed cable 900 for rotating and lifting.

The ingot growing apparatus of the embodiment may further include a pedestal 400 supporting the graphite crucible 100 and a crucible rotating part 410 extending from the pedestal 400 and rotating the crucible.

The graphite crucible 100 refers to a crucible having a bowl shape made of graphite, but a crucible made of a carbon composite material is also considered to be included in the crucible.

The crucible rotating part 410, which is a shaft disposed under the graphite crucible 100, can support the graphite crucible 100 and rotate and move it up and down.

The quartz crucible 200, which is loaded and supported inside the graphite crucible 100, is in the form of a bowl made of quartz and can accommodate the polycrystalline silicon in the inner space.

The heater unit 300 arranged to surround the outside of the graphite crucible 100 may heat the graphite crucible 100 to melt the polycrystalline silicon contained in the quartz crucible 200. The side heat insulating part 600 may be disposed on the outer periphery of the heater part 300 and the upper heat insulating part 700 may be disposed on the upper side of the quartz crucible 200. The side heat insulating part 600 and the upper heat insulating part 700 may serve to insulate the hot zone structure (e.g., quartz crucible, graphite crucible, and heater part).

A seed chuck 800 and a seed cable 900 connected to the seed chuck 800 may further be disposed above the quartz crucible 200. The seed chuck 800 may be immersed in the silicon melt and then be raised simultaneously with rotation to receive a seed for growing the ingot. The seed cable 900 is connected to the upper end of the seed chuck 800 So that the seed chuck 800 can be moved up and down simultaneously with the rotation. The crucible rotation part 410 can rotate the graphite crucible 100 in the opposite direction to the seed chuck 800 and simultaneously raise the crucible 800 when the seed cable 800 raises the seed chuck 800 at the same time .

2 is a perspective view of a conventional graphite crucible.

Referring to FIG. 2, the graphite crucible 100 according to the embodiment may have a bowl shape. More specifically, the graphite crucible may include a bottom surface, a side wall disposed on an outer periphery of the bottom surface, and a corner portion concavely connecting the side wall and the bottom surface.

When silicon is melted, deterioration can be concentrated in a specific portion of the graphite crucible 100. A gas such as SiO 2 generated by the reaction of the quartz crucible 200 and the silicon melt may enter the gap between the graphite crucible 100 and the quartz crucible 200 to damage the graphite crucible 100.

Particularly, when the heater unit 300 heats the graphite crucible 100, heat transfer may be varied depending on the position of the graphite crucible 100, and due to the heat transfer deviation, The deterioration can be concentrated on the corner portion of the substrate.

2, a crack 110 is formed at a corner portion of the graphite crucible 100, and a corner portion is enlarged. As a result, it can be seen that the corner 110 has a reduced thickness due to the crack 110. The deterioration is more concentrated in the crack 110, and the gas such as SiO 2 is denser and the etching is accelerated.

The crack 110 of the graphite crucible 100 shortens the lifespan of the graphite crucible and deforms the shape of the quartz crucible located inside the graphite crucible, resulting in a loss of the process.

Hereinafter, the structure of various graphite crucibles for preventing the crack 110 generated in the graphite crucible 100 will be described in different embodiments.

Fig. 3 is a graphite crucible according to the first embodiment, Fig. 3 (a) is a perspective view of a graphite crucible, and Fig. 3 (b) is a cross-sectional view of a graphite crucible.

3 (a) and 3 (b), the graphite crucible 100 according to the first embodiment may have a bowl shape. For example, the graphite crucible includes a bottom surface 105, a side wall 103 disposed on the outer circumference of the bottom surface 105, a corner portion 104 concavely connecting the side wall and the bottom surface 105, . ≪ / RTI >

In particular, at least one through hole H may be formed in the corner portion 104 of the graphite crucible 100 of the first embodiment to prevent concentration of deterioration and to discharge a gas such as SiO 2 .

More specifically, the through holes H connecting the outer surface 101 and the inner surface 102 of the corner portion 104 may be spaced apart at equal intervals. The through holes H may have various shapes such as triangular, square, polygonal, circular, and elliptical.

The through holes (H) can discharge the gas impregnated into the graphite crucible (100) and the quartz crucible gap into the through holes. Therefore, the graphite crucible 100 of the embodiment using the through hole H has an advantage that crack formation concentrated on the corner portion 104 can be suppressed.

4 is a side view of the graphite crucible 100 according to the second embodiment.

Referring to FIG. 4, the graphite crucible 100 according to the second embodiment may have a bowl shape. For example, the graphite crucible 100 has a bottom surface 105 and side walls 103 disposed on the outer circumference of the bottom surface 105, and a bottom surface 105, And a corner portion 104 that is formed on the outer circumferential surface.

The corner portion 104 of the graphite crucible 100 of the second embodiment is provided with the outer side surface 101 and the inner side surface 101 of the corner portion 104 in order to prevent the deterioration, A slit 130 (slit) may be formed in the transverse direction.

Both ends of the slit 130 are formed to have a closed structure and are rounded by a chamfer or the like, so that occurrence of cracks at the ends can be minimized.

The slits 130 may be formed at two or more corners 104 at different heights, and may be formed at equal intervals along the circumference of the corners 104.

In the graphite crucible 100 of this embodiment, the gas is discharged through the slit 130 to disperse the flow concentration of the gas, and the gas is discharged over a region larger than the through hole, thereby minimizing the etching phenomenon of the graphite crucible 100 can do. In this way, the deformation of the graphite crucible 100 is minimized, so that the height of the silicon melt in the quartz crucible is kept constant, and the growth quality of the silicon single crystal ingot can be stabilized.

Fig. 5 shows a perspective view of the graphite crucible 100 according to the third embodiment and an enlarged cross-sectional view of x-y in a perspective view.

The graphite crucible 100 according to the third embodiment may have a bowl shape. For example, the graphite crucible 100 has a bottom surface 105 and side walls 103 disposed on the outer circumference of the bottom surface 105, and a bottom surface 105, And a corner portion 104 that is formed on the outer circumferential surface.

Particularly, in the graphite crucible 100 of the third embodiment, a slit 140 in the longitudinal direction passing through the outer side surface 101 and the inner side surface 102 can be formed. The slit 140 may extend from the side wall 103 of the graphite crucible 100 to the corner 104 and extend to the bottom surface 105. Both ends of the slit 140 are formed to have a closed structure and are rounded by a chamfer or the like, so that occurrence of cracks at the ends can be minimized.

The longitudinal length L of the slit 140 may be between 5% and 80% of the length of the body of the graphite crucible 100 or between 50 and 400 mm. If the vertical length L of the slit 140 is 5% or less or 50 mm or less, the area of the slit 140 is reduced and the gas is difficult to discharge. When the slit 140 is 80% or more or 400 mm or more, The physical strength of the graphite crucible 100 can be weakened. More preferably, the longitudinal length of the slit 140 is between 70 mm and 90 mm, so that the physical strength of the graphite crucible 100 can be maintained above a certain level while enhancing the dispersing effect of the gas flow.

The width W of the slit 140 may be about 0.1 mm to about 10 mm. When the width W of the slit 140 is less than 0.1 mm, the gas is difficult to be discharged. When the slit 140 is 10 mm or more, deformation of the quartz crucible may occur. More preferably, the width W of the slit 140 may be about 1 mm to 3 mm.

At least two slits 140 spaced apart from one another along the circumference of the side wall 103 may be disposed in the graphite crucible 100.

In the graphite crucible 100 of this embodiment, since the gas is discharged through the slit 140 to disperse the flow concentration of the gas, and the gas is discharged over a region larger than the through hole, the etching phenomenon of the graphite crucible 100 is minimized can do. In this way, the deformation of the graphite crucible 100 is minimized, so that the height of the silicon melt in the quartz crucible is kept constant, and the growth quality of the silicon single crystal ingot can be stabilized.

5, the slit 140 can pass through the outer side surface 101 and the inner side surface 102 of the graphite crucible 100 with a constant width W. In addition, as shown in FIG.

Fig. 6 shows a state after using the graphite crucible 100 formed according to the third embodiment, and Fig. 7 shows a state of the quartz crucible that was accommodated in the graphite crucible 100 formed according to the third embodiment.

Referring to FIG. 6, it can be seen that when the slit 140 of the inner side 102 of the graphite crucible 100 formed according to the third embodiment is observed, excessive etching occurs around the slit 140. On the other hand, it can be seen that no etching occurs around the slit 140 of the outer surface 101 of the graphite crucible 100.

This is because the gas flow is concentrated on the slit 140 and etching is concentrated on the periphery thereof. 7, when the slit 140 is etched to increase the width of the slit 140, the deformation of the quartz crucible corresponding to the slit 140 of the graphite crucible 100 occurs, .

Since the etch phenomenon around the slit 140 reduces the lifetime of the graphite crucible 100, various structures of the slit 140 that can prevent the graphitic crucible 100 will be described below with reference to examples.

The slits 140 (or through holes) described below can be applied to the first to third embodiments, and the same reference numerals are assigned to the same concept, and a duplicate description will be omitted.

8 shows a perspective view of the graphite crucible 100 according to the fourth embodiment and an enlarged cross section of the X-Y part of the perspective view.

FIG. 8 is a graphite crucible 100 according to a third embodiment of the present invention, which differs from the graphite crucible 100 according to the third embodiment only in structure. However, it goes without saying that the technical features of the fourth embodiment can also be applied to the first to second embodiments.

As can be seen from FIGS. 6 and 7, when the width of the slit 140 is wide, it can be seen that deformation occurs in the portion of the quartz crucible corresponding thereto. Therefore, the slit 140 formed in the graphite crucible 100 needs to reduce the width of the inner side surface 102 while efficiently dispersing the gas flow. However, if the entire width of the slit 140 is reduced in order to reduce the width of the inner surface 102 of the slit 140, it may be difficult to process due to the thickness of the graphite crucible 100, There may be difficulties.

Referring to FIG. 8, the slit 140 of the fourth embodiment may have a width of the slit 140 adjacent to the inner side 102 and a width of the slit 140 adjacent to the outer side 101 of the fourth embodiment.

The slit 140 of the fourth embodiment may include a first hole 141 adjacent the outer side 101 of the graphite crucible 100 and a second hole 142 adjacent the inner side 102, The size of the first hole 141 and the second hole 142 may be different. Specifically, the size of the second hole 142 may be smaller than the size of the first hole 141.

For example, the first hole 141 may have a width of 5 mm or more, and the second hole 142 may have a width of 1 mm to 5 mm. If the width of the second hole 142 is 1 mm or less, it may be difficult to disperse the gas flow. If the width of the second hole 142 is 5 mm or more, the width of the second hole 142 may be increased due to etching around the second hole 142, and quartz crucible deformation may occur. More preferably, the width of the first hole 141 may be between 1 mm and 3 mm.

That is, the slit 140 of the fourth embodiment reduces the width of the slit 140 on the inner side surface 102 of the graphite crucible 100 by allowing the graphite crucible 100 to pass through a step in two steps, 101 can increase the width of the slit 140 to smooth out the gas discharge while preventing the deformation of the quartz crucible corresponding to the slit 140 of the inner side 102.

9 shows a cross-sectional view of a slit 140 according to a fifth embodiment.

FIG. 9 shows only the structure of the slit 140 in the graphite crucible 100 of the third embodiment, which is different from that of the third embodiment. However, it goes without saying that the technical features of the fifth embodiment can also be applied to the first and second embodiments.

The slit 140 of the fifth embodiment may be different in the width of the slit 140 adjacent to the inner side 102 and the width of the slit 140 adjacent to the outer side 101. [

The slit 140 of the fifth embodiment includes a first hole 143 adjacent the outer surface 101 of the graphite crucible 100, a third hole 145 adjacent the inner side 102, 143 and the second hole 145. The size of the first hole 143, the second hole 145 and the third hole may be different. The size of the first hole 143 may be larger than that of the second hole 145 and the size of the second hole 145 may be larger than that of the third hole 145.

For example, the first hole 143 may have a width of 5 mm or more, the second hole 145 may have a width of 3 mm to 5 mm, the third hole 145 may have a width of 1 mm to 5 mm, 3 mm. When the width of the third hole 145 is less than 1 mm, the gas flow dispersion may be difficult. If the third hole 145 is formed to have a width of 3 mm or more, the width of the second hole 145 may be increased due to the etching and the quartz crucible may be deformed.

That is, the slit 140 of the fifth embodiment reduces the width of the slit 140 on the inner side surface 102 of the graphite crucible 100 by allowing the graphite crucible 100 to pass through three steps, 101 can increase the width of the slit 140 to smooth out the gas discharge while preventing the deformation of the quartz crucible corresponding to the slit 140 of the inner side 102.

9, the slit 140 may pass through at least four steps.

10 shows a cross-sectional view of a slit 140 according to a sixth embodiment.

FIG. 10 shows only the structure of the slit 140 in the graphite crucible 100 of the third embodiment, and the difference from the third embodiment will be mainly described. However, it goes without saying that the technical features of the sixth embodiment can also be applied to the first and second embodiments.

The slit 140 of the sixth embodiment may be different in the width of the slit 140 adjacent to the inner side 102 and the width of the slit 140 adjacent to the outer side 101. [ Specifically, the width of the slit 140 may gradually decrease from the outer surface 101 to the inner surface 102. At this time, the rate of decrease of the width may be constant.

That is, the width of the slit 140 can be linearly decreased from the outer surface 101 to the inner surface 102. 10, the width of the slit 140 has a fan-like shape widened by the outer surface 101, and gas discharge between the gaps can be smoothly performed.

The width of the slit 140 of the outer side surface 101 is 5 mm or more and the width of the slit 140 of the inner side surface 102 is 1 mm to 5 mm. When the width of the slit 140 of the inner side surface 102 is less than 1 mm, it may be difficult to disperse the gas flow and there may be a difficulty in the process. When the width of the slit 140 of the inner surface 102 is 5 mm or more, quartz crucible deformation may occur. More preferably, the width of the inner side 102 slit 140 may be between 1 mm and 3 mm.

That is, the slit 140 of the sixth embodiment reduces the size of the graphite crucible 100 and reduces the width of the slit 140 on the inner surface 102 of the graphite crucible 100, The width of the slit 140 can be increased. With this structure, deformation of the quartz crucible corresponding to the slit 140 of the inner side surface 102 can be prevented while smoothly discharging the gas.

11 shows a cross-sectional view of the slit 140 according to the seventh embodiment.

FIG. 11 shows only the structure of the slit 140 in the graphite crucible 100 of the seventh embodiment, which is different from that of the third embodiment. However, it goes without saying that the technical features of the seventh embodiment are also applicable to the first and second embodiments.

The slit 140 of the seventh embodiment may be different in the width of the slit 140 adjacent to the inner side 102 and the width of the slit 140 adjacent to the outer side 101. [ Specifically, the width of the slit 140 may gradually decrease from the outer surface 101 to the inner surface 102. At this time, the rate of decrease of the width may gradually increase. That is, the width of the slit 140 can be reduced linearly from the outer surface 101 to the inner surface 102.

The width of the slit 140 of the outer side surface 101 is 5 mm or more and the width of the slit 140 of the inner side surface 102 is 1 mm to 5 mm. When the width of the slit 140 of the inner side surface 102 is less than 1 mm, it may be difficult to disperse the gas flow and there may be a difficulty in the process. When the width of the slit 140 of the inner surface 102 is 5 mm or more, quartz crucible deformation may occur. More preferably, the width of the inner side 102 slit 140 may be between 1 mm and 3 mm.

That is, the slit 140 of the seventh embodiment reduces the size of the graphite crucible 100 and reduces the width of the slit 140 on the inner surface 102 of the graphite crucible 100, The width of the slit 140 can be increased. With this structure, deformation of the quartz crucible corresponding to the slit 140 of the inner side surface 102 can be prevented while smoothly discharging the gas.

12 shows a process of forming the slit 140 according to the fourth embodiment.

Referring to FIG. 12 (a), first, a portion of the graphite crucible 100 where a slit 140 is to be formed is selected.

Next, as shown in FIG. 12 (b), a recess having a width of about 5 mm is formed on the outer surface 101 of the graphite crucible 100.

12 (c), a hole having a width smaller than that of the recess may be formed on the bottom surface of the recess to form a slit 140 having a different step.

12, a small-width recess is formed in the inner side surface 102 of the graphite crucible 100, and then the recess 101 is formed on the outer surface 101 of the graphite crucible 100 corresponding to the recess, It is also possible to form the slits 140 by connecting the recesses of the inner side surfaces 102 and the outer side surfaces 101 by forming a sieve.

As described above, the graphite crucible 100 of the embodiment forms the slit 140 (or the through hole) to discharge the gas impregnated between the quartz crucible and the graphite crucible 100, thereby preventing the damage of the graphite crucible 100 Can be prevented.

At this time, the slits 140 formed in the graphite crucible 100 are formed to have different widths of the outer side surface 101 and the inner side side 102, so that gas can be discharged more smoothly and deformation of the quartz crucible can be prevented There is an advantage.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (10)

A graphite crucible disposed inside the ingot growing apparatus and containing a quartz crucible,
Bottom surface;
A side wall disposed on an outer periphery of the bottom surface;
A corner portion concavely connecting the side wall and the bottom surface;
And at least one through hole penetrating through the outer side surface and the inner side surface of the side wall, the corner portion, or the side wall and the corner portion. The method according to claim 1,
And the through hole is a slit in the transverse direction passing through the outer side surface and the inner side surface at the corner portion. The method according to claim 1,
Wherein the through hole is a slit in the longitudinal direction extending from the side wall to the corner portion. The method of claim 3,
Wherein a width of the slit on the outer side and a width of the slit on the inner side are different from each other. 5. The method of claim 4,
Wherein the width of the slit gradually decreases from the outer side to the inner side. 5. The method of claim 4,
Wherein the width of the slit linearly decreases from the outer side to the inner side. 5. The method of claim 4,
Wherein the width of the slit decreases non-linearly from the outer side toward the inner side. 8. The method of claim 7,
And the amount of change in the width of the slit decreases from the outer side to the inner side gradually increases. 5. The method of claim 4,
Wherein a width of an outer side surface of the slit is 5 mm or more and a width of an inner side surface of the slit is 1 mm to 5 mm. 10. An ingot growing apparatus comprising a graphite crucible according to any one of claims 1 to 9.

KR1020140099964A 2014-08-04 2014-08-04 Crucible and ingot growing apparutus having the same KR20160016251A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113529162A (en) * 2021-07-19 2021-10-22 西安奕斯伟材料科技有限公司 Graphite crucible and device for preventing deformation of quartz crucible
CN115478319A (en) * 2022-09-21 2022-12-16 西安奕斯伟材料科技有限公司 Quartz crucible, crucible assembly and single crystal furnace
US11608567B2 (en) 2019-07-31 2023-03-21 Sk Siltron Co., Ltd. Crucible for ingot grower

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11608567B2 (en) 2019-07-31 2023-03-21 Sk Siltron Co., Ltd. Crucible for ingot grower
CN113529162A (en) * 2021-07-19 2021-10-22 西安奕斯伟材料科技有限公司 Graphite crucible and device for preventing deformation of quartz crucible
CN115478319A (en) * 2022-09-21 2022-12-16 西安奕斯伟材料科技有限公司 Quartz crucible, crucible assembly and single crystal furnace
CN115478319B (en) * 2022-09-21 2024-06-04 西安奕斯伟材料科技股份有限公司 Quartz crucible, crucible assembly and single crystal furnace

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