WO2023029708A1

WO2023029708A1 - Heater and single crystal furnace thermal field

Info

Publication number: WO2023029708A1
Application number: PCT/CN2022/102105
Authority: WO
Inventors: 周永波; 王玉龙; 赵鹏; 杨东
Original assignee: 银川隆基硅材料有限公司
Priority date: 2021-08-31
Filing date: 2022-06-29
Publication date: 2023-03-09
Also published as: CN115726036A

Abstract

A heater and a single crystal furnace thermal field, relating to the technical field of single crystal manufacturing. The heater is applied to a single crystal furnace thermal field, is provided on the outer periphery of a crucible in the single crystal furnace thermal field, and is used for at least heating a molten silicon liquid level in the crucible. The heater comprises: a plurality of heating areas and a plurality of slotted areas, each slotted area is connected between two adjacent heating areas; and openings of the plurality of slotted areas have a same opening directions, and the width of the slotted areas is greater than or equal to the width of the heating areas. According to the heater, under the condition that the heating areas of the heater are not shortened, the heating areas are reduced, thereby reducing the oxygen content of a single crystal silicon.

Description

A heater and a single crystal furnace thermal field

This application claims the priority of a Chinese patent application filed with the China Patent Office on August 31, 2021, with application number 202111016078.9, and the title of the invention is "A Heater and Thermal Field of a Single Crystal Furnace", the entire contents of which are hereby incorporated by reference in this application.

technical field

The invention relates to the technical field of single crystal manufacturing, in particular to a heater and a single crystal furnace thermal field.

Background technique

In the process of Czochralski single crystal, the main source of oxygen content is that the quartz crucible reacts with the molten silicon contained in the quartz crucible to form SiO, and most of the oxygen evaporates in the form of SiO gas. The circulatory system discharges, and the remaining part of the oxygen is not discharged in time, and will enter the molten silicon again, and the solid-liquid crystallization surface gathered in the crucible will enter the single crystal silicon as the crystal grows.

When oxygen enters the single crystal silicon as the crystal grows, there will be various defects in the drawn single crystal silicon. Therefore, reducing the oxygen content of the single crystal silicon is an urgent problem to be solved at present.

At present, the heating area of the heater is shortened to reduce the reaction area between the heater and the molten silicon, thereby reducing the generation of oxygen content. But this will lead to the concentration of the heating area, thereby reducing the life of the heater and increasing the cost of the heater.

Contents of the invention

Based on this, the object of the present invention is to provide a heater and a single crystal furnace thermal field, so as to reduce the heating area of the heater without shortening the heating area of the heater, thereby reducing the oxygen content of the single crystal silicon. technical solutions.

In a first aspect, the present invention provides a heater, which is applied in the thermal field of a single crystal furnace. The heater is arranged on the outer periphery of the crucible in the thermal field of the single crystal furnace, and is used to heat at least the liquid surface of molten silicon in the crucible.

The heater includes: multiple heating areas and multiple slotted areas, each slotted area is connected between two adjacent heating areas; the openings of the multiple slotted areas have the same opening direction, and the openings of the slotted areas The width is greater than or equal to the width of the heating zone.

In the case of adopting the above scheme, the heater provided by the present invention includes multiple heating zones and multiple slit zones, and each slit zone is connected between two adjacent heating zones, that is to say, the heating zone and the The slit areas are arranged alternately, and the heating area of the entire heater is more concentrated, reducing the radiation area of the heater to the crucible, weakening the heat convection in the molten silicon, reducing the generation of oxygen content, and thus reducing the defects of single crystal silicon . And the present invention reduces the effective heating area of the heater by arranging the heating area and the slit area at intervals. Compared with the prior art, shortening the heating area of the heater will not cause the heating area to be too concentrated, so the heating area of the heater will not be reduced. life, increasing heater cost.

Furthermore, in the present invention, the multiple slit areas have the same opening direction, and the width of the slit area is larger than the width of the heating area. Based on this, since the heating zones and the slit zones are arranged alternately and the multiple slit zones have the same opening direction, and the width of the slit zones is greater than the width of the heating zone, the heating zone of one of the two identical heaters It can be nested into the slit area of another heater, and when making the heater, a complete embryo can be processed into two identical heaters, thereby increasing the output ratio of the heater and reducing the use cost of the heater .

In a possible implementation manner, multiple heating zones have the same size parameter, and multiple slit zones have the same size parameter.

In the case of adopting the above technical solution, since the multiple heating zones have the same size parameters and the multiple slit zones have the same size parameters, based on this, the complexity of the green body can be simplified when making the heater.

In a possible implementation manner, the heating zone includes at least one heating element, and the opening depth of the slit area matches the height of at least one heating element in the heating zone; In the direction perpendicular to the arrangement direction of each heating zone and the plurality of slit zones, the size of the heating element.

In the case of adopting the above technical solution, when the opening depth of the slit area matches the height of at least one heating element in the heating area, when the heater is manufactured, the heating area can be fitly nested into the slit area , thereby saving fabrication space and embryo body material.

Further, when the heating zone includes a plurality of heating elements, the plurality of heating elements are arranged in parallel, and the plurality of heating elements are connected end-to-end through the first connecting element. Along the arrangement direction of at least one heating element, at least one end of the heating element is provided with a chamfer.

In the case of adopting the above technical solution, when at least one end of the heating element is provided with a chamfer, the area of the heating element can be reduced, thereby increasing the resistance of the heating element, and then when the heating element is energized, the unit area of the heating element can be increased on the heating efficiency.

In a possible implementation manner, the slotted area includes a second connecting piece, and the second connecting piece is located on a side of the slotted area away from the opening of the slotted area, and is used for connecting two adjacent heating areas.

In the case of adopting the above technical solution, the second connecting member is used to connect two adjacent heating zones, so that the multiple heating zones and the multiple slit zones form a stable integral structure.

In a possible implementation manner, after the multiple heating zones and the multiple slit zones are connected alternately, they are surrounded to form a shape matching the crucible in the thermal field of the single crystal furnace.

In the case of adopting the above technical solution, after the multiple heating zones and the multiple slit zones are connected alternately, they are enclosed to form a shape that matches the crucible in the thermal field of the single crystal furnace, so as to adapt to the thermal field of the single crystal furnace The shape of the middle crucible, so as to heat the silicon material in the crucible.

In a possible implementation manner, the heater further includes at least two supports and at least two support connection structures; each support is connected to the corresponding support connection structure through a detachable connection. Each of the support connection structures is disposed between a target heating area of the heater and a slit area adjacent to the target heating area, wherein the target heating area is one of the plurality of heating areas one.

When the heater includes two support connection structures, the two support connection structures are located at symmetrical positions of the heater.

Or, when the heater includes more than two support connection structures, multiple support connection structures are evenly arranged at corresponding positions of the heater along the circumferential direction of the heater.

In the case of adopting the above technical solution, since the supporting member is connected to the connecting structure of the supporting member through the detachable connecting member, it is used to support the heater. Moreover, for thermal fields of different heights, it can be achieved by disassembling and replacing the support members, while other thermal field components are not affected, thereby further saving costs.

Furthermore, the above arrangement of the connecting structure of the supporting member can make the heater more stably arranged in the thermal field of the single crystal furnace.

In a possible implementation manner, each of the supporting member connection heating area structures includes a connected connection area and a connection opening area; the width of the connection opening area is greater than or equal to the width of the connection area.

Further, the connection opening areas of at least two support member connection structures have the same opening direction.

The connection opening area and the connection area are arranged along the arrangement direction of the multiple heating areas and the multiple slit areas; the opening depth of the connection opening area is greater than or equal to the height of the connection area.

Or, the connection opening area and the connection area are arranged on the surface of the heater along a direction perpendicular to the arrangement direction of the plurality of heating areas and the plurality of slit areas, and the minimum opening depth of the connection opening area is greater than or equal to the height of the connection area.

In the case of adopting the above technical solution, since the connection opening areas of at least two supporting member connection structures have the same opening direction, and the width of the connection opening area is greater than or equal to the width of the connection area, the opening depth of the connection opening area is greater than or equal to The height of the connection area, so the connection structure of the support in the present invention can be adapted to the structure of the heater of the present invention, so that the heating area of one heater in two identical heaters can be nested into the slit area of the other heater , and then when making the heater, a complete embryo body can be processed into two identical heaters, thereby increasing the output ratio of the heater and reducing the use cost of the heater.

In the second aspect, the present invention also discloses a thermal field of a single crystal furnace, including the above-mentioned heater.

The beneficial effects of the second aspect and various implementations thereof in the present invention are the same as those of the first aspect or any possible implementation of the first aspect, and will not be repeated here.

The above description is only an overview of the technical solution of the present disclosure. In order to better understand the technical means of the present disclosure, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present disclosure more obvious and understandable , the specific embodiments of the present disclosure are enumerated below.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are some embodiments of the present application. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

The accompanying drawings are used for better understanding of the present application, and do not constitute an improper limitation of the present application. in:

Fig. 1 shows a structural diagram of a heater provided by an embodiment of the present invention;

Fig. 2 shows a structural diagram of one embryonic body with two heaters provided by the embodiment of the present invention;

FIG. 3 shows a structural diagram of another heater provided by an embodiment of the present invention;

Fig. 4 shows another structural diagram of one embryonic body with two heaters provided by the embodiment of the present invention;

Fig. 5 shows a schematic structural diagram of a connection structure of a heater support provided by an embodiment of the present invention;

Fig. 6 shows a schematic structural diagram of a connection structure of a heater support provided by an embodiment of the present invention.

Explanation of attached drawing numbers:

1-first heater, 2-second heater, 3-third heater, 4-fourth heater, 10-heating zone, 11-heating element, 12-heating element, 13-chamfering, 20- Slit area, 30-support connecting structure, 101-heating part, 102-heating part, 103-first connecting part, 104-narrow opening, 105-heating part, 106 heating part, 107-heating part, 108-heating 109-the first connector, 1010-the first connector, 1011-the first connector, 201-the opening of the slit area, 202-the second connector, 301-the connection area, 302-the connection opening area.

specific embodiment

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined. "Several" means one or more than one, unless otherwise clearly and specifically defined.

Based on this, an embodiment of the present invention discloses a heater to provide a technical solution to reduce the heating area of the heater without shortening the heating area of the heater, thereby reducing the oxygen content of single crystal silicon, thereby solving the problem of above technical issues.

The heater provided by the embodiment of the present invention is arranged on the outer periphery of the crucible in the thermal field of the single crystal furnace, and is used for heating at least the molten silicon liquid level in the crucible, so as to ensure continuous pulling of single crystal silicon.

Referring to FIG. 1 and FIG. 3 , the heater includes: multiple heating zones 10 and multiple slotted zones 20 , each slotted zone 20 is connected between two adjacent heating zones 10 . That is to say, the heating zone 10 is alternately connected with the slit zone 20. Based on this, the heat generation of the heating zone 10 of the entire heater is more concentrated, the radiation area of the heater to the crucible is reduced, the heat convection in the molten silicon is weakened, and the The generation of oxygen content is reduced, thereby reducing the defects of single crystal silicon. In practice, the oxygen content dropped by 1.2 ppma due to the structure of the heater in the embodiment of the present invention.

Moreover, the embodiment of the present invention reduces the effective heating area of the heater by arranging the heating area 10 and the slit area 20 at intervals. Compared with the prior art, shortening the heating area of the heater will not cause the heating area to be too concentrated, so it is not necessary to It will reduce the life of the heater and increase the cost of the heater.

Furthermore, referring to FIG. 1 and FIG. 3 , the plurality of slotted areas 20 have the same opening direction, and the width of the slotted areas 20 is greater than or equal to the width of the heating area 10 . Based on this, referring to FIG. 2 , among two identical heaters, the heating area of the first heater 1 can be nested into the slit area of the second heater 2 . Or, referring to FIG. 4 , the heating area of the third heater 3 among the two identical heaters can be nested into the slit area of the fourth heater 4 . Therefore, when making the heater, a complete embryo body can be processed into two identical heaters, thereby increasing the output ratio of the heater and reducing the use cost of the heater. In practical application, when manufacturing the heater provided by the embodiment of the present invention, two identical heaters can be processed from one complete blank body. Therefore, the cost can be reduced by 50%.

It can be understood that, in order to reduce the difficulty of making the heater and simplify the difficulty of making the body of the heater, referring to FIG. 1 or FIG. 3 , the plurality of heating zones 10 of the heater in the embodiment of the present invention have the same size parameters. Each slit area 20 also has the same size parameters.

Referring to FIG. 1 or FIG. 3 , the dimensional parameters of the plurality of heating zones 10 may include the height and width of the plurality of heating zones 10 . The size parameters of the plurality of slotted areas 20 may include the opening depth and opening width of the plurality of slotted areas 20 . Wherein, along the arrangement direction of multiple heating zones 10 and multiple slit zones 20, the size of the heating zone 10 is the width of the heating zone 10, and the size of the slit zone 20 is the opening width of the slit zone 20, perpendicular to the heating zone The dimension in the width direction of 10 is the height of the heating zone 10 , and the dimension perpendicular to the width direction of the opening of the slotted area 20 is the opening depth of the slotted area 20 .

In an embodiment of the present invention, the heating zone includes at least one heating element, and the opening depth of the slotted area matches the height of the at least one heating element in the heating zone. Wherein, the height of the heating element is: the size of the heating element along the direction perpendicular to the arrangement direction of the multiple heating zones and the multiple slit zones. Based on this, when manufacturing the heater, the heating area can be fitly nested into the slit area, thereby saving manufacturing space and blank body material.

Referring to FIG. 1 , direction A is the arrangement direction of the plurality of heating zones 10 and the plurality of slit zones 20 . The direction B is the height direction of the heating element (101, 102) or the heating area 10 or the slit area 20, and the direction B is perpendicular to the direction A. The direction C is the width direction of the slit area 20 or the heating area 10 , and the direction C is perpendicular to the direction B.

When the heating zone includes multiple heating elements, the multiple heating elements are arranged in parallel, and the multiple heating elements are connected end-to-end through the first connecting element.

Exemplarily, referring to FIG. 1 , a heating zone 10 includes two

heating elements

101 and 102 arranged parallel to each other. At the same end of the two

heating elements

101 and 102, the two

heating elements

101 and 102 pass through a first connecting piece 103 are connected, and the other ends of the two heating elements form a narrow opening 104. At this time, the opening width of the slit area 20 is greater than the sum of the widths of the two

heating elements

101 and 102 and the width of the narrow opening 104 . Wherein, the opening width of the slit area 20 is the opening size of the slit area 20 along the arrangement direction of the plurality of heating areas 10 and the plurality of slit areas 20 . The width of the heating zone 10 is the size of the heating zone 10 along the arrangement direction of the multiple heating zones 10 and the multiple slit zones 20 .

The width of the heating element (101, 102) is the size of the heating element along the arrangement direction of the plurality of heating regions 10 and the plurality of slit regions 20. The width of the narrow opening 104 is the size of the narrow opening 104 along the arrangement direction of the plurality of heating regions 10 and the plurality of slit regions 20 .

Exemplarily, Fig. 3 is a schematic diagram of another kind of heater provided by the embodiment of the present invention, which is formed by alternately processing the heating zone 1 and the slotted area in sequence, which is different from the two heating elements nested in the slotted area in the figure. Four heating elements are nested in the wide slit area of the heater; it can be understood that as long as nesting processing or other deformation nesting is satisfied, all equal changes and improvements made to the number of heating elements within the scope of the embodiments of the present invention are acceptable. should still belong to the scope covered by this patent. Specifically, one heating zone 10 in FIG. 1011 connected end to end. Since a narrow opening is formed between every two heating elements, three narrow openings are formed between the four heating elements. At this time, the opening width of the slit area is greater than the sum of the widths of the four heating elements and the widths of the three narrow openings, so that the slit area can be nested into the heating area.

Wherein, the heating element and the first connecting element in the heating zone included in the heater are made of carbon-carbon composite material or graphite.

In practice, referring to FIG. 1 , the slit area 20 is formed by two

heating elements

11 and 12 close to the slit area in two adjacent heating areas. The slotted area 20 also includes a second connecting piece 202, which is located on the side of the slotted area 20 away from the opening 201 of the slotted area, and is used to connect two adjacent heating areas, so that multiple heating area and multiple slotted areas form a solid overall structure.

In a possible implementation, referring to FIG. 1 , along the arrangement direction of the plurality of heating elements in the heating zone 10, chamfers 13 are provided at both ends of each heating element.

In the case where at least one end of each heating element is provided with a chamfer, the area of the heating element can be reduced, thereby increasing the resistance of the heating element, and furthermore, when the heating element is energized, the heating efficiency per unit area of the heating element can be increased.

Furthermore, chamfers can be provided at both ends of each heating element, so as to further reduce the area of the heating element and increase the unit heating efficiency of the heating element to a greater extent.

It can be understood that, in order to adapt to the shape of the crucible in the thermal field of the single crystal furnace, the heater provided in the embodiment of the present invention needs to have a shape matching the crucible, that is to say, in the embodiment of the present invention, multiple heating zones and multiple slit zones After alternate connections, the enclosure forms a shape that matches the crucible in the thermal field of the single crystal furnace.

Referring to FIG. 1 or FIG. 3 , in order to adapt to the thermal field of the single crystal furnace, the heater provided by the embodiment of the present invention further includes at least two supports (not shown in the figure), and at least two support connection structures 30 . Each support is connected to the corresponding support connection structure 30 through a detachable connection.

It can be understood that the above-mentioned supporting member is used to support the heater, so that the heater can be stably placed in the thermal field of the single crystal furnace. Each support is connected to the corresponding support connection structure through a detachable connection. Based on this, for different heights of the heat field, it can be realized by disassembling and replacing the support, while other heat field components are not affected , resulting in further cost savings.

Wherein, each support connecting structure is arranged between the target heating area of the heater and the slit area adjacent to the target heating area, wherein the target heating area is any one of the plurality of heating areas. The embodiment of the present invention does not specifically limit the specific position of the support member connection structure in the heater.

Specifically, when the heater includes two support member connection structures, the two support member connection structures are located at symmetrical positions of the heater, so as to realize stable support for the heater. It can be understood that when the heater includes a plurality of support member connection structures, the plurality of support member connection structures are evenly arranged at corresponding positions of the heater along the circumferential direction of the heater.

Further, referring to FIG. 5 and FIG. 6 , each support member connection structure 30 includes a connected connection area 301 and a connection opening area 302 .

Referring to FIG. 5 or FIG. 6 , the width d of the connection opening region 302 is greater than or equal to the width b of the connection region 301 .

Wherein, the width of the connecting opening area is: the size of the connecting opening area in the same direction as the arrangement direction of the plurality of heating areas and the plurality of slit areas. Specifically, referring to Fig. 1, the width direction of the connection opening area 302 is the same as the arrangement direction of the plurality of heating areas and the plurality of slit areas, the width direction of the connection opening area 302 is E, and the width of the connection opening area is the connection opening The size of the zone along the direction E.

The width of the connection area is: the size of the connection area in the same direction as the arrangement direction of the plurality of heating areas and the plurality of slit areas. Specifically, referring to Fig. 1, the width direction of the connection zone 301 is the same as the arrangement direction of the multiple heating zones and the plurality of slit zones, the width direction of the connection zone 301 is E, and the width of the connection zone is E along the direction E of the connection zone. on the size.

The connection opening regions 302 of at least two support member connection structures 30 included in each heater have the same opening direction.

In a possible implementation, referring to FIG. 5 , the connection opening area 302 and the connection area 301 are arranged along the arrangement direction of the plurality of heating areas and the plurality of slit areas; the opening depth c1 of the connection opening area 302 is greater than or It is equal to the height a of the connection area 301 .

In another possible implementation, referring to FIG. 6 , the connection opening area 302 and the connection area 301 are arranged on the surface of the heater along a direction perpendicular to the arrangement direction of the plurality of heating areas and the plurality of slit areas. It can be seen that the minimum depth of the connection opening area in FIG. 6 is c2. And the minimum opening depth c2 of the connecting opening area 302 is greater than or equal to the height a of the connecting area 301 .

Wherein, referring to FIG. 1 , the opening depth of the connection opening area 302 is: the size of the connection opening area in a direction D perpendicular to the width direction E of the connection opening area 302 .

The height of the connection region 301 is: the size of the connection region in a direction D perpendicular to the width direction E of the connection region 301 .

Based on the above description, since the connection opening areas of at least two supporting member connection structures have the same opening direction, and the width of the connection opening area is greater than or equal to the width of the connection area, the opening depth of the connection opening area is greater than or equal to the height of the connection area , so the connection structure of the support in the embodiment of the present invention can be adapted to the structure of the heater of the present invention, so that the heating area of one of the two identical heaters can be nested into the slit area of the other heater, and then When making a heater, a complete embryo body can be processed into two identical heaters, thereby increasing the output ratio of the heater and reducing the cost of using the heater.

In a specific example, the processing method of the connection structure of the above-mentioned support member can be as follows: since the heating area of the heater is annularly symmetrical, no slits are made for any reserved heating area, and no slits are made at the symmetrical positions; The support connection structure is set at half of the height of the device. The support connection structure and the support are connected by carbon-carbon bolts. The height of the support can be processed with other blanks according to different thermal field sizes, and other thermal field components Unaffected, therefore, further cost savings can be achieved.

In practical applications, in order to meet the resistance requirements and the life of the heater, the width of the heating zone is preferably 35mm-50mm, and the total height of the heater is preferably 240mm-280mm.

An embodiment of the present invention also provides a thermal field of a single crystal furnace, including the above-mentioned heater.

The beneficial effect of the thermal field of the single crystal furnace provided by the embodiment of the present invention is the same as that of the above-mentioned heater, and will not be repeated here.

Although the present invention has been described in conjunction with various embodiments herein, in implementing the claimed invention, those skilled in the art can understand and realize the disclosure by referring to the drawings, the disclosure, and the appended claims. Other Variations of Embodiments. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that these measures cannot be combined to advantage.

Although the invention has been described in conjunction with specific features and embodiments thereof, it will be apparent that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, the specification and drawings are merely illustrative of the invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies thereof, the present invention also intends to include these modifications and variations.

Claims

A heater, characterized in that it is applied in the thermal field of a single crystal furnace, the heater is arranged on the outer periphery of a crucible in the thermal field of a single crystal furnace, and is used to at least control the molten silicon liquid level in the crucible heating;

The heater includes: a plurality of heating areas and a plurality of slit areas, and each of the slit areas is connected between two adjacent heating areas; the openings of the plurality of slit areas have the same The opening direction, and the width of the slit area is greater than or equal to the width of the heating area.
The heater according to claim 1, wherein the plurality of heating regions have the same size parameter, and the plurality of slotted regions have the same size parameter.
The heater according to claim 1, wherein each of the heating zones includes at least one heating element, and the opening depth of the slotted zone is the same as the height of the at least one heating element in the heating zone. matching; wherein, the height of the heating element is: the size of the heating element along a direction perpendicular to the arrangement direction of the plurality of heating regions and the plurality of slit regions.
The heater according to claim 3, wherein when the heating zone includes a plurality of heating elements, the plurality of heating elements are arranged in parallel, and the plurality of heating elements are arranged end to end through corresponding first connecting elements connect.
The heater according to claim 3, wherein at least one end of each heating element is provided with a chamfer.
The heater according to claim 1, wherein the slotted area includes a second connecting piece, the second connecting piece is located on the side of the slotted area away from the opening of the slotted area, for Two adjacent heating zones are connected.
The heater according to any one of claims 1-6, characterized in that, after a plurality of said heating zones and a plurality of said slit zones are alternately connected, they are surrounded to form a crucible in the thermal field of the single crystal furnace. Match the shape.
The heater according to any one of claims 1-6, characterized in that, the heater further comprises at least two supports and at least two support connection structures; each of the supports is connected through a detachable connection be connected with the corresponding support connecting structure;

Each support connecting structure is disposed between a target heating area of the heater and a slit area adjacent to the target heating area, wherein the target heating area is one of the plurality of heating areas one.
The heater according to claim 8, wherein when the heater includes two support connection structures, the two support connection structures are located at symmetrical positions of the heater;

Or, when the heater includes more than two support connection structures, multiple support connection structures are evenly arranged at corresponding positions of the heater.
The heater according to claim 8, characterized in that, each of the supporting member connection structures includes a connected connection area and a connection opening area;

The width of the connection opening area is greater than or equal to the width of the connection area.
The heater according to claim 10, characterized in that the connecting opening areas of the at least two supporting member connecting structures have the same opening direction.
The heater according to claim 10, wherein the connection opening area and the connection area are arranged along the arrangement direction of the plurality of heating areas and the plurality of slit areas; the connection opening area The depth of the opening is greater than or equal to the height of the connection area;

Or, the connection opening area and the connection area are arranged on the surface of the heater along a direction perpendicular to the arrangement direction of the plurality of heating areas and the plurality of slit areas, and the smallest opening of the connection opening area The depth is greater than or equal to the height of the connection zone.
A thermal field of a single crystal furnace, characterized by comprising the heater described in any one of claims 1-12.