CN212077196U - Oxygen-increasing heater for single crystal furnace - Google Patents

Oxygen-increasing heater for single crystal furnace Download PDF

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Publication number
CN212077196U
CN212077196U CN202020424415.2U CN202020424415U CN212077196U CN 212077196 U CN212077196 U CN 212077196U CN 202020424415 U CN202020424415 U CN 202020424415U CN 212077196 U CN212077196 U CN 212077196U
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oxygen
heater
single crystal
oxygen increasing
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闫龙
魏兴彤
王忠宝
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Ningxia Zhongxin Wafer Semiconductor Technology Co Ltd
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Ningxia Zhongxin Wafer Semiconductor Technology Co Ltd
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Abstract

An oxygen increasing heater of a single crystal furnace relates to the technical field of single crystal furnace components, oxygen in a quartz crucible is dissolved out, the oxygen increasing heater is in a cylindrical shape with two open ends and comprises a standard section and an oxygen increasing section which are fixedly connected from top to bottom, the inner diameters of the standard section and the oxygen increasing section are the same, the outer diameter of the standard section is larger than that of the oxygen increasing section, the outer diameter of the oxygen increasing section is reduced relative to that of a traditional heater, according to a formula of resistance = resistivity x length/cross section area, under the condition that the resistivity and the length of the oxygen increasing heater can not be changed, the cross section area is changed, the resistance value is increased to increase the heating value of the oxygen increasing heater, so that the temperature range of the heater is increased, and then make quartz crucible bottom receive the heater radiant heat many, the dissolution reaction of oxygen accelerates, increases the oxygen content of crystal bar afterbody, compares in traditional heater, has increased the dissolved volume of oxygen in the fixed time.

Description

Oxygen-increasing heater for single crystal furnace
Technical Field
The utility model relates to a single crystal growing furnace part technical field, concretely relates to single crystal growing furnace oxygenation heater.
Background
The heater is a core component of a thermal field, mainly provides heat required by the growth of the single crystal, is used for heating and dissolving oxygen in the quartz crucible, the oxygen is an important impurity in the single crystal silicon, in the CZ crystal pulling, the oxygen enters into the silicon melt through the dissolution of the quartz crucible, and the oxygen content has great influence on the internal impurity absorption capacity of the silicon wafer and the mechanical strength and the resistivity (thermal donor effect) of the silicon wafer.
At present, the heavily-doped antimony product requires high oxygen content, the range is 10-18ppma, however, oxygen deposition in the antimony single crystal is inhibited, the oxygen distribution is gradually reduced from head to tail, while the heating center of the traditional heater is at the central position of the heater and the temperature zone is shorter, the heat radiated by the heater at the bottom of the quartz crucible is less, the dissolution reaction of oxygen is slow, and the oxygen content at the tail of the crystal bar is lower than the standard, so that the problem of increasing the dissolution amount of oxygen within a fixed time is urgently needed to be solved.
Disclosure of Invention
In view of the above, it is desirable to provide an oxygen increasing heater for a single crystal furnace that increases the dissolution reaction of oxygen.
The utility model provides a single crystal growing furnace oxygenation heater, dissolves out the oxygen in the quartz crucible, and the shape is the open tube-shape in both ends, including from top to bottom fixed connection's standard section, oxygenation section, the internal diameter of standard section and oxygenation section is the same, and the external diameter of standard section is greater than the external diameter of oxygenation section, and the external diameter of oxygenation section is 552mm, so that the resistance increase of oxygenation section, thereby increase the holistic heat of single crystal growing furnace oxygenation heater, and then accelerate the dissolution reaction of oxygen in the quartz crucible, improve the dissolved quantity of oxygen.
Preferably, the sum of the lengths of the standard section and the oxygen increasing section is 1.6-1.8 times of the length of the quartz crucible.
Preferably, the length of the oxygenation section is 150 mm.
Preferably, the standard section has a length of 297 mm.
Preferably, the standard section and the oxygenation section have an internal diameter of 516 mm.
Preferably, the outside diameter of the standard section is 566. + -.7 mm.
Preferably, the oxygen increasing heater of the single crystal furnace further comprises a connecting pin.
The utility model adopts the above technical scheme, its beneficial effect lies in: the outer diameter of the oxygen increasing section is reduced relative to that of a traditional heater, according to a formula of resistance = resistivity multiplied by length/cross-sectional area, under the condition that the resistivity and the length of the oxygen increasing heater of the single crystal furnace cannot be changed, the cross-sectional area is changed, the resistance value is increased, the heat productivity of the oxygen increasing heater of the single crystal furnace is increased, the temperature range of the heater is increased, the heat radiated by the heater at the bottom of the quartz crucible is increased, the dissolution reaction of oxygen is accelerated, the oxygen content at the tail of the crystal rod is increased, and compared with the traditional heater, the dissolution amount of oxygen is increased within a fixed time.
Drawings
FIG. 1 is a schematic structural diagram of an oxygen increasing heater of a single crystal furnace.
FIG. 2 is a schematic structural view of another angle of the oxygen increasing heater of the single crystal furnace.
Fig. 3 is a schematic view of an angle shown in fig. 2.
In the figure: the oxygen increasing heater comprises a single crystal furnace oxygen increasing heater 10, a standard section 20, an oxygen increasing section 30, a connecting pin 40 and a gap 50.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Referring to fig. 1 to 3, an embodiment of the present invention provides a single crystal furnace oxygen increasing heater 10, oxygen in a quartz crucible is dissolved, the shape is a tube shape with two open ends, including a standard section 20 and an oxygen increasing section 30 which are fixedly connected from top to bottom, the inner diameters of the standard section 20 and the oxygen increasing section 30 are the same, the outer diameter of the standard section 20 is greater than the outer diameter of the oxygen increasing section 30, the outer diameter of the oxygen increasing section 30 is 552mm, so as to increase the resistance of the oxygen increasing section 30, thereby increasing the overall heat of the single crystal furnace oxygen increasing heater 10, further accelerating the dissolution reaction of oxygen in the quartz crucible, and improving the dissolution amount of oxygen.
Furthermore, the sum of the lengths of the standard section 20 and the oxygenation section 30 is 1.6-1.8 times of the length of the quartz crucible.
Further, the length of the oxygen increasing section 30 is 150 mm.
Further, the standard segment 20 has a length of 297 mm.
Further, the standard section 20 and the oxygenation section 30 have an inner diameter of 516 mm.
Further, the standard section 20 has an outer diameter of 566. + -.7 mm.
Further, the inner diameter, the outer diameter and the length of the standard section 20 and the oxygen increasing section 30 are set so that the resistivity of the whole oxygen increasing heater 10 of the single crystal furnace can meet the requirements of field use.
Further, the oxygen increasing heater 10 of the single crystal furnace also comprises a connecting pin 40, and the length of the connecting pin 40 is 39 mm.
Furthermore, the oxygen increasing heater 10 of the single crystal furnace is integrally formed by connecting a predetermined number of resistance plates in series end to end in an S shape, a gap 50 exists between the middle sections of every two resistance plates, the width of the gap 50 is 7 +/-2 mm, the length of the gap is 392, the thickness of the part of the resistance plate, which is positioned in the standard section 20, is larger than that of the part, which is positioned in the oxygen increasing section 30, of the resistance plate, and 22 gaps 50 exist.
This device is when specifically using, installs this device in single crystal growing furnace through connecting foot 40, heats, and the resistance is higher, and the heat that this device produced is higher, quartz crucible's dissolution reaction increase, and the dissolved quantity of oxygen also consequently increases for the oxygen content of crystal bar afterbody is no less than standard oxygen content.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims (7)

1. The utility model provides a single crystal growing furnace oxygenation heater, dissolves out the oxygen in the quartz crucible, and the shape is the open tube-shape in both ends, its characterized in that: including standard section, the oxygenation section of from top to bottom fixed connection, the internal diameter of standard section and oxygenation section is the same, and the external diameter of standard section is greater than the external diameter of oxygenation section, and the external diameter of oxygenation section is 552mm to make the resistance increase of oxygenation section, thereby increase the holistic heat of single crystal growing furnace oxygenation heater, and then accelerate the dissolution reaction of oxygen in the quartz crucible, improve the dissolved quantity of oxygen.
2. The single crystal furnace oxygen increasing heater of claim 1, wherein: the sum of the lengths of the standard section and the oxygenation section is 1.6-1.8 times of the length of the quartz crucible.
3. The single crystal furnace oxygen increasing heater of claim 2, wherein: the length of the oxygenation section is 150 mm.
4. A single crystal furnace oxygen increasing heater as claimed in claim 3, wherein: the standard section has a length of 297 mm.
5. The single crystal furnace oxygen increasing heater of claim 4, wherein: the standard section and the oxygenation section have an internal diameter of 516 mm.
6. A single crystal furnace oxygen increasing heater as claimed in claim 5, wherein: the outer diameter of the standard section is 566 mm +/-7 mm.
7. The oxygen increasing heater of the single crystal furnace according to any one of claims 1 to 6, characterized in that: also comprises a connecting pin.
CN202020424415.2U 2020-03-27 2020-03-27 Oxygen-increasing heater for single crystal furnace Active CN212077196U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202020424415.2U CN212077196U (en) 2020-03-27 2020-03-27 Oxygen-increasing heater for single crystal furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202020424415.2U CN212077196U (en) 2020-03-27 2020-03-27 Oxygen-increasing heater for single crystal furnace

Publications (1)

Publication Number Publication Date
CN212077196U true CN212077196U (en) 2020-12-04

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CN202020424415.2U Active CN212077196U (en) 2020-03-27 2020-03-27 Oxygen-increasing heater for single crystal furnace

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CN (1) CN212077196U (en)

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