CN217418863U - Silicon carbide single crystal growth furnace with symmetrical induction coil structure - Google Patents
Silicon carbide single crystal growth furnace with symmetrical induction coil structure Download PDFInfo
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- CN217418863U CN217418863U CN202220470812.2U CN202220470812U CN217418863U CN 217418863 U CN217418863 U CN 217418863U CN 202220470812 U CN202220470812 U CN 202220470812U CN 217418863 U CN217418863 U CN 217418863U
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Abstract
The utility model discloses a silicon carbide single crystal growth furnace with a symmetrical induction coil structure, which relates to the technical field of silicon carbide single crystal growth furnaces, wherein at least one group of induction coils are arranged outside a graphite crucible; the induction coil is at least one of a step type, a parallel type or a spiral type. The utility model provides a silicon carbide single crystal growth furnace of symmetry type induction coil structure, the outside a plurality of coils of crucible can the independent control, and cascaded induction coil most symmetry, the magnetic induction line that horizontal segment department electric current produced is perpendicular with the graphite crucible, and heating efficiency is higher, and radial temperature is more even, because the upper segment is very short, and because heating work piece self thermal conduction, the magnetic induction line that the coil upper segment produced is very little to whole influence. Even the coil floodgate number is less, still can guarantee that magnetic induction line is perpendicular with graphite crucible to make the heating workpiece radial temperature more even than traditional helix form induction coil heating, control radial temperature that can be better.
Description
Technical Field
The utility model relates to a silicon carbide single crystal growth furnace technical field especially relates to a silicon carbide single crystal growth furnace of symmetry type induction coil structure.
Background
The induction coil of the existing silicon carbide single crystal growth furnace is arranged outside the furnace body, the furnace body is generally made of a quartz tube, the induction coil hardly interferes with a magnetic field, a graphite heat insulation material is arranged inside the furnace body, a material bearing crucible is arranged inside the heat insulation material, a powder source is arranged below the heat insulation material, a silicon carbide seed crystal is arranged above the heat insulation material, the induction coil is connected with an alternating current power supply, the power supply provides alternating current for the coil, the alternating current flowing through the coil generates an alternating magnetic field passing through the graphite crucible, the graphite crucible generates eddy current to heat the magnetic field, the temperature of the silicon carbide powder source at the lower part is high by controlling the axial temperature gradient, the temperature of a seed crystal growth surface is low, the silicon carbide powder is recrystallized on the seed crystal growth surface after sublimation, and the silicon carbide single crystal with the same crystal lattice as the seed crystal and good performance is generated.
The induction heating coil used by the traditional silicon carbide single crystal growth furnace is generally a long-strip square copper tube bent into a spiral line ascending mode, the processing mode leads the induction coil to have an inclination angle relative to a heated workpiece at each position, and leads each turn of coil to be asymmetric relative to an axis, so that the magnetic field intensity at the same horizontal section is asymmetric, the radial temperature in each direction can generate difference, and the heating is not uniform enough. In a silicon carbide single crystal growth furnace, because the radial temperature uniformity needs to be controlled with high precision, the use requirement is difficult to meet. And when the number of turns of the coil is less, and the turns of the coil are distributed sparsely, the lead angle is increased, and the asymmetry phenomenon is more serious.
Disclosure of Invention
In order to solve the technical problem, the utility model provides a silicon carbide single crystal growth furnace with a symmetrical induction coil structure, which improves the uniformity of heating and better controls the radial temperature.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides a silicon carbide single crystal growth furnace with a symmetrical induction coil structure, wherein at least one group of induction coils are arranged outside a graphite crucible; the induction coil is at least one of a step type, a parallel type or a spiral type.
Optionally, the induction coil is stepped, and the induction coil includes a horizontal section and an ascending section; the end part of the ascending section is connected with the end part of the horizontal section; the ascending section is arranged obliquely or vertically.
Optionally, the induction coil is in parallel, the induction coil includes two vertical sections and a plurality of horizontal sections, one end of each of the plurality of horizontal sections is connected to one of the vertical sections, and the other end of each of the plurality of horizontal sections is connected to the other vertical section.
Optionally, an insulating pad is arranged between the current outlet joint and the current inlet joint of the induction coil.
Optionally, at least one set of the induction coils is respectively arranged in the crucible seed crystal region and the silicon carbide source powder region of the graphite crucible.
The utility model discloses for prior art gain following technological effect:
the utility model provides a silicon carbide single crystal growth furnace of symmetry type induction coil structure, the outside a plurality of coils of crucible can the independent control, and cascaded induction coil most symmetry, the magnetic induction line that horizontal segment department electric current produced is perpendicular with the graphite crucible, and heating efficiency is higher, and radial temperature is more even, because the upper segment is very short, and because heating work piece self thermal conduction, the magnetic induction line that the coil upper segment produced is very little to whole influence. Even the number of coil gates is less, the magnetic induction line can still be ensured to be vertical to the graphite crucible, so that the radial temperature of a heating workpiece is more uniform than that of a traditional spiral line type induction coil, and the radial temperature can be better controlled.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural view of a silicon carbide single crystal growth furnace of a symmetrical induction coil structure according to a first embodiment of the present invention;
FIG. 2 is a schematic side view of an induction coil in a first embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 3 is a schematic top view showing an induction coil according to a first embodiment of the silicon carbide single crystal growth furnace of the symmetrical induction coil structure of the present invention;
FIG. 4 is a schematic view showing a second example of the silicon carbide single crystal growth furnace of the symmetrical induction coil structure according to the present invention;
FIG. 5 is a schematic view showing a side structure of an induction coil in a second embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 6 is a schematic top view showing an induction coil in a second embodiment of a silicon carbide single crystal growth furnace of a symmetrical induction coil structure according to the present invention;
FIG. 7 is a schematic structural view of a silicon carbide single crystal growth furnace according to a third embodiment of the symmetrical induction coil structure of the present invention;
FIG. 8 is a schematic side view of an induction coil in a third embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 9 is a schematic top view showing an induction coil in a third embodiment of a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure according to the present invention;
FIG. 10 is a schematic structural view of a fourth embodiment of a silicon carbide single crystal growth furnace of the symmetrical induction coil structure of the present invention;
FIG. 11 is a schematic side view of an induction coil in a fourth embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 12 is a schematic top view showing an induction coil in a fourth embodiment of a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure according to the present invention;
FIG. 13 is a schematic structural view of a silicon carbide single crystal growth furnace according to a fifth embodiment of the symmetrical induction coil structure of the present invention;
FIG. 14 is a schematic side view of an induction coil in a fifth embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 15 is a schematic top view showing an induction coil according to a fifth embodiment of the silicon carbide single crystal growth furnace of the symmetrical induction coil structure of the present invention;
FIG. 16 is a schematic structural view of a silicon carbide single crystal growth furnace according to a sixth embodiment of the symmetrical induction coil structure of the present invention;
FIG. 17 is a schematic side view showing an induction coil in a sixth embodiment of a silicon carbide single crystal growth furnace having a symmetrical induction coil structure according to the present invention;
FIG. 18 is a schematic top view showing an induction coil in a sixth embodiment of a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure according to the present invention;
FIG. 19 is a schematic structural view showing a silicon carbide single crystal growth furnace according to a seventh embodiment of the symmetrical induction coil structure of the present invention;
FIG. 20 is a schematic side view showing an induction coil according to a seventh embodiment of the silicon carbide single crystal growth furnace of the symmetric type induction coil structure of the present invention;
FIG. 21 is a schematic top view showing an induction coil according to a seventh embodiment of the silicon carbide single crystal growth furnace of the symmetrical induction coil structure according to the present invention.
Description of reference numerals: 1. a current outflow joint; 2. a current inflow joint; 3. an induction coil; 4. a graphite crucible; 5. an insulating pad; 6. a crucible seed crystal region; 7. a silicon carbide source powder region.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example one
As shown in fig. 1 to 3, this example provides a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure, and a set of stepped induction coils 3 is provided outside a graphite crucible 4. The induction coil 3 comprises a horizontal section and an ascending section; the end part of the ascending section is connected with the end part of the horizontal section; the ascending section is arranged obliquely. Further, the two ends of the induction coil 3 are a current outlet connector 1 and a current inlet connector 2 respectively.
In this embodiment, the rise section is as short as possible, and this structure is because induction coil 3 is most symmetrical, and the magnetic induction line that the electric current produced at horizontal segment department is perpendicular with graphite crucible 4, and heating efficiency is higher, and radial temperature is more even, and because the rise section is very short, and because the thermal conduction of heating work piece self, the magnetic induction line that the coil rise section produced is very little to whole influence. Even the number of coil gates is less, the magnetic induction lines can still be ensured to be vertical to the graphite crucible 4, so that the radial temperature of a heating workpiece is more uniform than that of the traditional spiral line type induction coil 3, and the radial temperature can be better controlled.
Example two
As shown in fig. 4 to 6, this embodiment is a modified embodiment based on the first embodiment, and the ascending section is vertically disposed in this embodiment.
EXAMPLE III
As shown in fig. 7 to 9, in the present embodiment, there is provided a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure, in which a set of parallel type induction coils 3 is provided outside a graphite crucible 4. The induction coil 3 comprises two vertical sections and a plurality of horizontal sections, one end of each of the plurality of horizontal sections is connected with one of the vertical sections, and the other end of each of the plurality of horizontal sections is connected with the other vertical section. One vertical section is provided with a current outflow joint 1 and the other vertical section is provided with a current inflow joint 2. An insulating mat 5 is arranged between the current outflow terminal 1 and the current inflow terminal 2.
The induction coil 3 is made by connecting a plurality of circles of parallel and symmetrical circular red copper tubes in parallel, a plurality of single-circle coils adopt the same power supply inflow port and the same power supply outflow port, and the structure can ensure that magnetic induction lines generated by each circle of coils vertically pass through a heated crucible, so that the heating is more uniform. Meanwhile, the turn pitch of the coils can be randomly distributed, the induction coils 3 with various different pitches can be designed according to heating requirements, the turn pitch can be changed, the magnetic induction lines can still be guaranteed to vertically pass through the graphite crucible 4, the coils at the seed crystal are sparse by changing the pitch of the induction coils 3 in the silicon carbide growth furnace, so that the temperature at the seed crystal is low, the coils at the powder source are dense, the temperature at the silicon carbide source powder is high, the required axial temperature difference is formed, the growth speed of the silicon carbide crystal is improved, and the performance of the generated silicon carbide crystal is good.
Example four
As shown in fig. 10 to 12, this example provides a silicon carbide single crystal growth furnace of a symmetrical type induction coil structure, and two sets of spiral type induction coils 3 are provided outside a graphite crucible 4.
EXAMPLE five
As shown in fig. 13 to 15, in this embodiment, a single induction coil 3 is used in the seed crystal region, another induction coil 3 is used in the silicon carbide powder region 7 below, and the two induction coils 3 are respectively connected to a driving power supply, so that the magnetic fields generated by the two coils can be independently controlled, and the temperature gradient can be better controlled, so that the quality of the seed crystal is improved. After the growth of the seed crystal is finished, the grown crystal can be independently annealed through the coil in the seed crystal area, the stress in the crystal is reduced, and the crystal quality is improved.
EXAMPLE six
As shown in fig. 16 to 18, in the present embodiment, a silicon carbide single crystal growth furnace with a symmetrical induction coil structure is provided, in the present embodiment, a crucible is externally disposed on three stepped induction coils 3, and each induction coil 3 is connected to a driving power supply, so that magnetic fields generated by the three coils can be independently controlled, and a temperature gradient can be better controlled, so that the quality of seed crystals can be improved.
EXAMPLE seven
In some cases where it is not necessary to horizontally divide the heating region, the heating region may be divided into regions by using a spiral induction coil at the lower side and a parallel induction coil at the upper side.
As shown in fig. 19 to 21, in the present embodiment, a set of parallel type induction coils 3 is disposed in a crucible seed crystal region 6 at the upper part of a crucible, a set of spiral type induction coils 3 is disposed at other parts of the crucible, and two induction power supplies are used to connect one spiral type induction coil 3 and one parallel type induction coil 3 respectively for operation.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation of the present invention are explained by applying specific examples in this specification, and the above descriptions of the examples are only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (3)
1. A silicon carbide single crystal growth furnace with a symmetrical induction coil structure is characterized in that at least one group of induction coils are arranged outside a graphite crucible; the induction coil is at least one of stepped type, parallel type or spiral type;
the induction coil is in a step shape and comprises a horizontal section and an ascending section; the end part of the ascending section is connected with the end part of the horizontal section; the ascending section is arranged obliquely or vertically;
the induction coil is in a parallel connection type and comprises two vertical sections and a plurality of horizontal sections, one end of each horizontal section is connected with one vertical section, and the other end of each horizontal section is connected with the other vertical section.
2. The silicon carbide single crystal growth furnace of a symmetrical induction coil structure according to claim 1, wherein an insulating pad is provided between a current outflow terminal and a current inflow terminal of the induction coil.
3. The silicon carbide single crystal growth furnace of a symmetrical induction coil structure according to claim 1, wherein the crucible seed crystal region and the silicon carbide source powder region of the graphite crucible are provided with at least one set of the induction coils, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220470812.2U CN217418863U (en) | 2022-03-07 | 2022-03-07 | Silicon carbide single crystal growth furnace with symmetrical induction coil structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220470812.2U CN217418863U (en) | 2022-03-07 | 2022-03-07 | Silicon carbide single crystal growth furnace with symmetrical induction coil structure |
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| Publication Number | Publication Date |
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| CN217418863U true CN217418863U (en) | 2022-09-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220470812.2U Active CN217418863U (en) | 2022-03-07 | 2022-03-07 | Silicon carbide single crystal growth furnace with symmetrical induction coil structure |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |
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