CN113514163B - Temperature detection device - Google Patents
Temperature detection device Download PDFInfo
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- CN113514163B CN113514163B CN202110760675.6A CN202110760675A CN113514163B CN 113514163 B CN113514163 B CN 113514163B CN 202110760675 A CN202110760675 A CN 202110760675A CN 113514163 B CN113514163 B CN 113514163B
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- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
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- 239000002002 slurry Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- Measuring Temperature Or Quantity Of Heat (AREA)
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Abstract
The invention discloses a temperature detection device, which is characterized by comprising: a substrate having oppositely disposed first and second surfaces; the detection electrode is arranged on the first surface of the substrate, a detection area is arranged in the detection area, a continuous concave structure is arranged in the detection area, and a conductive material is arranged in the concave structure to form the detection electrode; and the two ends of the detected electrode are respectively provided with a lap joint electrode, and the lap joint electrode is electrically connected with the detected electrode. According to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed through the concave structure, the resistance of the detection electrode can be effectively controlled by controlling the width and the depth of the concave structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, the width can be made small through the concave structure, the material can be saved, and the size of the device is smaller.
Description
Technical Field
The invention relates to the technical field of electronic device manufacturing, in particular to a temperature detection device.
Background
Temperature detection is closely related to our lives and is visible everywhere around us. The conventional temperature detection mainly comprises an infrared thermopile, thermocouple temperature detection, thermal resistance temperature detection and thermistor temperature detection, wherein the infrared thermopile is used for non-contact temperature measurement, the thermocouple temperature detection is suitable for measurement in a high-temperature environment, the temperature measurement error is large, and the residual thermal resistance and thermistor temperature detection have high temperature measurement precision.
Micro Hotplate (MHP) based on silicon micromachining technology is a common heating and testing platform in Micro Electro Mechanical Systems (MEMS), and has been widely used in Micro devices such as Micro thermal flowmeters, micro infrared detectors, and barometers. The combination of the micro-heating plate and the thermal resistance temperature detection can enable the temperature detection to have a faster response speed.
At present, common thermal resistance temperature detection is carried out, a core resistance material is usually prepared by physical vapor deposition, the cost is high, and the stability and reliability of the product are poor; moreover, the resistance of the detection electrode or the micro-hotplate is difficult to control, so that the production process is long, the yield is low, and the cost is increased.
Disclosure of Invention
In order to solve the problems, the technical scheme of the invention provides a temperature detection device which has better stability and reliability, simple manufacturing process and low manufacturing cost.
In order to achieve the above object, the present invention provides the following technical solutions:
a temperature detection device, comprising:
a substrate having oppositely disposed first and second surfaces;
the detection electrode is arranged on the first surface of the substrate, a detection area is arranged in the detection area, a continuous concave structure is arranged in the detection area, and a conductive material is arranged in the concave structure to form the detection electrode;
the two ends of the detection electrode are respectively provided with a lap joint electrode, and the lap joint electrode is electrically connected with the detection electrode;
wherein the detection electrode satisfies the following formula: t= (P) T *L- R 0 (W*(H-h)))/(R 0 (W is (H-H)). A), T is the temperature to be measured, L is the length of the detection electrode, and P T Is the electron blocking parameter of the substance in unit area, R 0 The resistance of the detection electrode at 0 ℃ is that W is the width of the concave structure, H is the depth of the concave structure, H is the depth of the concave structure without conductive material, and A is a constant.
In one embodiment, a supporting table is further disposed on one side of the second surface of the substrate, and the supporting tables are disposed at two ends of the substrate, so that a cavity is formed on the second surface corresponding to the detection area.
In one embodiment, the second surface of the substrate is a non-planar structure, and at least two opposite edges of the substrate have a thickness greater than that of other areas, and the second surface corresponding to the detection area forms a cavity.
In one embodiment, the detection electrode is embedded in the substrate, and the resistance of the detection electrode is greater than the resistance of the lap electrode, wherein the resistance of the detection electrode is at least one time of the resistance of the lap electrode.
In one embodiment, the bonding electrode is protruding on the surface of the substrate, and the resistance of the bonding electrode is smaller than the resistance of the detection electrode, where the resistance of the detection electrode is at least one time of the resistance of the bonding electrode.
In one embodiment, the depth H of the recessed structure is equal to the thickness of the substrate, or the depth H is less than the thickness of the substrate.
In one embodiment, the concave structures are filled with conductive paste or conductive ink in a printing mode, and then the conductive paste or the conductive ink is sintered at a high temperature to form the detection electrode.
In one embodiment, the printing mode includes screen printing, ink-jet printing, gravure printing, relief printing, doctor blading, spraying, microinjection and the like.
In one embodiment, the width of the concave structure is changed, and the detection electrode formed by the concave structure forms a preset shape.
In one embodiment, the width of the concave structure is 0.2 μm to 30 μm, the depth is 1 μm to 30 μm, and the ratio of the depth to the width is not less than 0.8.
In one embodiment, the conductive material is any one of Pt, au, ag, cu, al, ni, W, ag/Pd alloy and Pt/A u alloy.
According to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed through the concave structure, the resistance of the detection electrode can be effectively controlled by controlling the width and the depth of the concave structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, the width can be made smaller through the concave structure, the material can be saved, and the size of the device can be smaller. Meanwhile, compared with expensive chemical vapor deposition and physical vapor deposition equipment, equipment for forming the detection electrode through sintering corresponding slurry or ink has lower equipment cost and reduces manufacturing cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a temperature detecting device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a temperature detecting device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another temperature detecting device according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another temperature detecting device according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of another temperature detecting device according to an embodiment of the present invention;
fig. 8a to 8c are top views of a temperature detecting device according to an embodiment of the present invention.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
A temperature detection device, comprising:
a substrate having oppositely disposed first and second surfaces; the substrate can resist at least 100 ℃ at high temperature, so that the substrate can still work in a working environment with the temperature higher than 100 ℃ without influencing the performance of a device, and the lowest bearable temperature is at least-100 ℃; the substrate can be made of materials such as glass, ceramic, silicon wafer, microcrystalline glass and the like which can resist high temperature, and mainly provides supporting or attaching functions;
the detection electrode is arranged on the first surface of the substrate, a detection area is arranged in the detection area, a continuous concave structure is arranged in the detection area, and a conductive material is arranged in the concave structure to form the detection electrode; the conductive material in the concave structure can be arranged in the concave structure in a manner of electroplating, printing filling and the like, the conductive material can be melted and sintered in a sintering manner, so that the conductive performance of the concave structure is more stable, the width and the depth of the concave structure can be designed according to the requirements of the resistor, the resistor can be preset through the design, and the prepared resistor and the preset target resistor are closer, more accurate and better in controllability; the production process can be greatly reduced, the yield is improved, and the cost is saved; the cross section of the concave structure can be triangular, rectangular, square, trapezoid, special-shaped structure and the like;
the two ends of the detection electrode are respectively provided with a lap joint electrode, and the lap joint electrode is electrically connected with the detection electrode; the lap joint electrode and the detection electrode are connected, the parameter change of the detection electrode is mainly transmitted to an external device, the conductive material used by the lap joint electrode can be the same as that of the detection electrode, so that the signal loss can be reduced, and meanwhile, the lap joint electrode and the detection electrode can be formed on the first surface at the same time, so that the process complexity is reduced by one-time formation, and the feasibility of mass production is improved; furthermore, for devices with low precision requirements, different conductive materials can be used as the material of the lap joint electrode, and the lap joint electrode is formed by silk screen printing, spot coating and the like;
wherein the detection electrode satisfies the following formula: t= (P) T *L- R 0 (W*(H-h)))/(R 0 (W (H-H)). A), T is the temperature to be measured, L is the detectionElectrode length, P T Is the electron blocking parameter of the substance in unit area, R 0 The resistance of the detection electrode at 0 ℃, W is the width of the concave structure, H is the depth of the concave structure, H is the depth of the concave structure without conductive material, and A is a constant; according to the method, the external temperature is tested through the detection electrode, so that the external temperature meets the formula, the influence of the width and the depth of the concave structure on the temperature can be seen through the formula, and the external temperature value can be obtained through measuring the change of the electrical property of the detection electrode.
In one embodiment, a supporting table is further arranged on one side of the second surface of the substrate, and the supporting tables are arranged at two ends of the substrate, so that a cavity is formed on the second surface corresponding to the detection area; the detection electrode needs to detect the change of the external environment temperature, and the supporting tables are arranged at the two ends of the substrate which are oppositely arranged, so that the detection area is suspended, the suspended detection electrode is thin in thickness, small in volume and small in heat capacity, and when the external temperature changes, the resistance of the detection electrode can also respond rapidly, and the response speed of the temperature detection device is greatly improved; the supporting table can be made of ceramic materials, microcrystalline glass, silicon wafers and other high-temperature-resistant materials, can bear a very wide temperature change range, ensures a relatively wide working environment range of the detection electrode, and ensures normal working of the detection electrode.
In one embodiment, the second surface of the substrate is a non-planar structure, and at least two opposite edges of the substrate have a thickness greater than that of other areas, so that the second surface corresponding to the detection area forms a cavity, which is equivalent to the structure that the support table in the previous embodiment is integrated with the substrate, and is integral with the substrate, but the thickness corresponding to the detection electrode area is relatively thin, and the first surface of the substrate is a flat surface (excluding the concave structure or the lap electrode provided on the first surface).
In one embodiment, the lap electrode is embedded in the substrate, and the resistance of the lap electrode is smaller than the resistance of the detection electrode; or the lap electrode is convexly arranged on the surface of the substrate, and the resistance of the lap electrode is smaller than that of the detection electrode, and in two structures: the resistance value of the detection electrode is at least one time of the resistance value of the lap electrode; because the energy consumption of the device is also very important, on the premise that the detection electrode can meet the device requirement, the smaller the resistance of other conductive parts which do not relate to detection is, the better, so that the energy consumption of the device can be effectively reduced, and the smaller the resistance of the lap joint electrode is required.
In one embodiment, the depth H of the recessed structures is equal to the thickness of the substrate, or the depth H is less than the thickness of the substrate; defining the relation between the concave structure and the thickness of the substrate, wherein the detection electrode has different structures, when the thickness of the concave structure is equal to the thickness of the substrate, the concave structure is a through hole, in other words, the detection electrode penetrates through the substrate in the thickness direction, and at least two surfaces of the conductive material of the detection electrode are in contact with air; when the thickness of the concave structure is smaller than that of the substrate, the detection electrode is embedded in the substrate, but the conductive material in the concave structure does not necessarily fill the concave structure.
In one embodiment, the concave structure is filled with the conductive material in a filling manner, then the conductive material is sintered to form the detection electrode, the conductive material is enabled to form the detection electrode in a sintering manner to be more stable, and the detection electrode of the detection device can be formed by using the method without expensive physical vapor deposition equipment and chemical vapor deposition equipment through low-cost non-vacuum printing, drying and sintering processes, so that the manufacturing cost is low, the high-temperature-resistant detection electrode can be formed, and the stability and reliability of a product are improved.
In one embodiment, the width of the concave structure is changed, the detection electrode formed by the concave structure forms a preset shape, the width change is set on the basis of a certain depth, so that the resistance of the detection electrode is changed, the effect of reducing power consumption is achieved by changing the resistance of the detection electrode, the resistance of an effective area of the detection electrode is ensured, the resistance of an ineffective area is reduced, and the detection electrode can be in the shape of mosquito-repellent incense, snake-shaped, folded line type and the like.
In one embodiment, the width of the concave structure is 0.2 μm to 30 μm, the depth is 1 μm to 30 μm, and the ratio of the depth to the width is not less than 0.8.
In one embodiment, the conductive material is any one of Pt, au, ag, cu, al, ni, W, ag/Pd alloy and Pt/A u alloy, and different conductive materials can be selected according to different product requirements to achieve different functions or different precision, so that when different metal materials are used as the conductive materials, micro-battery formation between the conductive materials is not avoided.
Referring to fig. 1, a temperature detecting device includes a substrate 11, a detecting electrode 20, and a bonding electrode 21; the substrate 11 includes a first surface and a second surface, the first surface is provided with a concave structure, a conductive material is disposed in the concave structure to form a detection electrode 20, a lap electrode 21 is disposed at an edge of the first surface of the substrate, the lap electrode 21 is electrically connected with the detection electrode 20, and certainly the lap electrode 21 is not necessarily disposed at an edge of the substrate 11, the main purpose is that the lap electrode 21 is electrically connected with the detection electrode 20, and a specific position is described only according to a schematic diagram, at this time, the first surface of the substrate 11 is a plane, and the lap electrode 21 is disposed on the plane and is in a convex structure higher than the first surface of the substrate 11; the second surface of the substrate 11 is further provided with a supporting table 10, the supporting table 10 is arranged at the edge of the substrate 11, so that a cavity is formed in a region corresponding to the detection electrode 20, and the detection electrode 20 is in complete contact with the peripheral environment; the substrate 11 may be glass, ceramic, silicon wafer or a combination of the three, and the conductive material may be any one of Pt, au, ag, cu, al, ni, W, ag/Pd alloy and Pt/A u alloy; the depth of the concave structure is 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm; width 0.2 μm, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm.
Referring to fig. 2, the structure of the lap electrode 21 is changed on the basis of fig. 1, the lap electrode 21 is embedded in the first surface of the substrate 11, the lap electrode 21 is electrically connected with the detection electrode 20, the concave structure of the device detection electrode and the concave structure of the lap electrode with the structure are completed at one time through the same process, so that the process cost can be saved, the detection electrode 20 and the lap electrode 21 are formed at one time through filling conductive materials and sintering process, the process is simple, the lap electrode 21 is not convexly arranged on the first surface of the substrate 11, and the first surface of the substrate 11 is an approximate plane.
Referring to fig. 3, a temperature detecting device includes a substrate 12, a detecting electrode 20 and a bonding electrode 21; the substrate 12 includes a first surface and a second surface, the first surface is provided with a concave structure, a conductive material is disposed in the concave structure to form a detection electrode 20, a lap electrode 21 is disposed at an edge of the first surface of the substrate 12, the lap electrode 21 is electrically connected with the detection electrode 20, the second surface of the substrate 12 is in a non-planar structure, that is, a thickness of the edge of the substrate 12 is greater than a thickness of an area of the detection electrode 20, so that a cavity is formed by the detection electrode 20 corresponding to the area of the second surface, and the first surface of the substrate 12 is still planar. The detection electrode 20 in this embodiment may penetrate the substrate 12 (not shown), that is, the depth of the recess structure is equal to the thickness of the substrate 12, which is a perforation.
Referring to fig. 4, a detection electrode 22 of a temperature detection device is shown, a concave structure of the detection electrode 22 is not filled, so that a space is formed above the concave structure, and in combination with fig. 7, the width of the concave structure is W, the depth is H, and no conductive material is arranged in the concave structure; wherein the H-H difference is larger than 0.05 μm, and of course, 0.1 μm, 0.2 μm, 0.3 μm, 0.5 μm and 0.8 μm can be used for meeting the requirement of resistance; and the detection electrode satisfies the following formula: t= (P) T *L- R 0 (W*(H-h)))/(R 0 (W is (H-H)). A), T is the temperature to be measured, L is the length of the detection electrode, and P T The electron blocking parameter of the substance in unit area is obtained according to the test measurement, R 0 The resistance of the detection electrode at 0 ℃ is that W is a dentThe width of the structure, H is the depth of the concave structure, H is the depth of the concave structure without the conductive material, A is a constant, but the conductive material is generally 0.0039 of platinum A, when the material of the conductive material is changed, the size of A is different, but A is still a constant, and the A mainly shows the change of the resistance when the temperature of the resistance of different materials changes by 1 degree.
Referring to fig. 5, a temperature detecting device includes a substrate 13, a detecting electrode 20 and a bonding electrode 21; the substrate 13 comprises a first surface and a second surface, the first surface is provided with a concave structure, a conductive material is arranged in the concave structure to form a detection electrode 20, the edge of the first surface of the substrate 13 is provided with a lap joint electrode 21, the lap joint electrode 21 is electrically connected with the detection electrode 20, the second surface of the substrate 13 is of a planar structure, the first surface of the substrate 13 is still planar, no cavity corresponds to the detection electrode 20, and no cavity exists on the opposite side.
Referring to fig. 6, a temperature detecting device includes a substrate 13, a detecting electrode 20, a protecting layer 30, and a bonding electrode 21; the substrate 13 comprises a first surface and a second surface, the first surface is provided with a concave structure, a conductive material is arranged in the concave structure to form a detection electrode 20, a protective layer 30 is arranged on the surface of the detection electrode 20, a lap electrode 21 is arranged at the edge of the first surface of the substrate 13, and the lap electrode 21 is electrically connected with the detection electrode 20; the protective layer 30 in this embodiment may be a protective glaze, which can well protect the detection electrode 20, and of course, in order to ensure the working sensitivity of the detection electrode, the thickness of the protective layer 30 is not greater than 100 μm, and in the above embodiments, a protective layer may be provided to protect the detection electrode.
Referring to fig. 8 a-8 c, a top plan view of a temperature sensing device of the present invention is disclosed, but of course, only schematic, and the shapes of the sensing electrodes 20, 22 and the bonding electrode 21 can be seen, and the serpentine 200 can be connected to the bonding electrode 210 as shown in the figures; or the fold line type 201 is connected with the lap electrode 211, or the mosquito-repellent incense type 203 is connected with the lap electrode 213; fig. 8 a-8 c simply list the shapes of the devices, but in practice many shapes may be used, not an exhaustive list.
According to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed through the concave structure, the resistance of the detection electrode can be effectively regulated and controlled by controlling the width and the depth of the concave structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, the width can be made smaller through the concave structure, the material can be saved, and the size of the device can be smaller. Meanwhile, the equipment for forming the detection electrode through sintering the corresponding slurry is relatively low in equipment cost compared with chemical vapor deposition equipment and physical vapor deposition equipment, and the manufacturing cost is reduced.
In the description of the embodiments in this specification, each embodiment focuses on the difference from other embodiments, and the same similar parts between the embodiments refer to each other, and may be used together or may be combined with each other in alternative.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A temperature detection device, comprising:
a substrate having oppositely disposed first and second surfaces;
the detection electrode is arranged on the first surface of the substrate, a detection area is arranged in the detection area, a continuous concave structure is arranged in the detection area, and a conductive material is arranged in the concave structure to form the detection electrode;
the two ends of the detection electrode are respectively provided with a lap joint electrode, and the lap joint electrode is electrically connected with the detection electrode;
wherein the detection electrode satisfies the following formula: t= (PT x L-R0 (W x (H-H)))/(R0 (W x (H-H))) a, T is the temperature to be measured, L is the length of the detection electrode, PT is the electron blocking parameter of the substance in the unit area, R0 is the resistance of the detection electrode at 0 ℃, W is the width of the recess structure, H is the depth of the recess structure where no conductive material is provided, and a is a constant.
2. The device according to claim 1, wherein a supporting table is further provided on the second surface side of the substrate, and the supporting tables are provided at both ends of the substrate, so that the second surface corresponding to the detection area forms a cavity.
3. The device of claim 1, wherein the second surface of the substrate is a non-planar structure, and at least two opposite edges of the substrate have a thickness greater than that of the other areas to form a cavity on the second surface corresponding to the detection area.
4. A temperature detecting device according to any one of claims 1 to 3, wherein the lap joint electrode is embedded in the substrate, and the resistance of the lap joint electrode is smaller than the resistance of the detection electrode, wherein the resistance of the detection electrode is at least one time of the resistance of the lap joint electrode.
5. A temperature detecting device according to any one of claims 1 to 3, wherein the lap joint electrode is protruded on the surface of the substrate, and the resistance of the lap joint electrode is smaller than the resistance of the detection electrode, wherein the resistance of the detection electrode is at least one time of the resistance of the lap joint electrode.
6. A temperature sensing device according to any one of claims 1-3, wherein the depth H of the recessed structure is equal to the thickness of the substrate.
7. A temperature sensing device according to any one of claims 1 to 3, wherein the depth H of the recess is less than the thickness of the substrate.
8. A temperature sensing device according to claim 1, wherein the recess structure is filled with a conductive material by filling, and the conductive material is sintered to form the sensing electrode.
9. The device of claim 1, wherein the recess has a width of 0.2 μm to 20 μm and a depth of 1 μm to 20 μm.
10. A temperature sensing device according to claim 9, wherein the ratio of the depth of the recessed features to the width of the recessed features is not less than 0.8.
11. A temperature sensing device according to claim 1, wherein the conductive material is any one of a Pt, au, ag, cu, al, ni, W, ag/Pd alloy and a Pt/A u alloy.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2021106890878 | 2021-06-22 | ||
| CN202110689087 | 2021-06-22 |
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| CN113514163A CN113514163A (en) | 2021-10-19 |
| CN113514163B true CN113514163B (en) | 2024-01-12 |
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| CN202110760675.6A Active CN113514163B (en) | 2021-06-22 | 2021-07-06 | Temperature detection device |
| CN202121521851.2U Active CN215114917U (en) | 2021-06-22 | 2021-07-06 | Device for monitoring temperature change |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005078400A1 (en) * | 2004-02-17 | 2005-08-25 | Matsushita Electric Industrial Co., Ltd. | Infrared detector and process for fabricating the same |
| WO2014040650A1 (en) * | 2012-09-17 | 2014-03-20 | Element Six Limited | Diamond microelectrode |
| CN104006735A (en) * | 2014-06-12 | 2014-08-27 | 智性科技南通有限公司 | Embedded type thick-film resistor strain sensor and manufacturing method of embedded type thick-film resistor strain sensor |
| CN104050464A (en) * | 2014-07-02 | 2014-09-17 | 南昌欧菲生物识别技术有限公司 | Method for manufacturing fingerprint recognition sensor, fingerprint recognition sensor and electronic device |
| CN107369491A (en) * | 2016-05-13 | 2017-11-21 | 昇印光电（昆山）股份有限公司 | A kind of conducting film and preparation method |
| CN109818128A (en) * | 2019-02-11 | 2019-05-28 | 张家港保税区灿勤科技有限公司 | TM mould dielectric resonator |
| WO2019198689A1 (en) * | 2018-04-12 | 2019-10-17 | 株式会社デンソー | Particulate matter detection device |
| CN212963752U (en) * | 2020-09-08 | 2021-04-13 | 南昌欧菲显示科技有限公司 | Thermocouple and temperature measuring equipment |
| CN112880847A (en) * | 2021-01-11 | 2021-06-01 | 吕岩 | Temperature detection device and system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0622695D0 (en) * | 2006-11-14 | 2006-12-27 | Element Six Ltd | Robust radiation detector comprising diamond |
-
2021
- 2021-07-06 CN CN202110760675.6A patent/CN113514163B/en active Active
- 2021-07-06 CN CN202121521851.2U patent/CN215114917U/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005078400A1 (en) * | 2004-02-17 | 2005-08-25 | Matsushita Electric Industrial Co., Ltd. | Infrared detector and process for fabricating the same |
| WO2014040650A1 (en) * | 2012-09-17 | 2014-03-20 | Element Six Limited | Diamond microelectrode |
| CN104006735A (en) * | 2014-06-12 | 2014-08-27 | 智性科技南通有限公司 | Embedded type thick-film resistor strain sensor and manufacturing method of embedded type thick-film resistor strain sensor |
| CN104050464A (en) * | 2014-07-02 | 2014-09-17 | 南昌欧菲生物识别技术有限公司 | Method for manufacturing fingerprint recognition sensor, fingerprint recognition sensor and electronic device |
| CN107369491A (en) * | 2016-05-13 | 2017-11-21 | 昇印光电（昆山）股份有限公司 | A kind of conducting film and preparation method |
| WO2019198689A1 (en) * | 2018-04-12 | 2019-10-17 | 株式会社デンソー | Particulate matter detection device |
| CN109818128A (en) * | 2019-02-11 | 2019-05-28 | 张家港保税区灿勤科技有限公司 | TM mould dielectric resonator |
| CN212963752U (en) * | 2020-09-08 | 2021-04-13 | 南昌欧菲显示科技有限公司 | Thermocouple and temperature measuring equipment |
| CN112880847A (en) * | 2021-01-11 | 2021-06-01 | 吕岩 | Temperature detection device and system |
Non-Patent Citations (2)
| Title |
|---|
| 平面电容传感器热障涂层缺陷检测系统;代守强;陈棣湘;田武刚;潘孟春;任远;周卫红;;中国测试(01);全文 * |
| 红外探测器晶片电极设计与应力分析;李岩;李慧;常玲玲;吴茂;;空间控制技术与应用(04);全文 * |
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| CN113514163A (en) | 2021-10-19 |
| CN215114917U (en) | 2021-12-10 |
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