CN113514163A - Temperature detection device - Google Patents
Temperature detection device Download PDFInfo
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- CN113514163A CN113514163A CN202110760675.6A CN202110760675A CN113514163A CN 113514163 A CN113514163 A CN 113514163A CN 202110760675 A CN202110760675 A CN 202110760675A CN 113514163 A CN113514163 A CN 113514163A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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Abstract
The invention discloses a temperature detection device, which is characterized by comprising: the device comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged; the detection electrode, the first surface of said basement has detection areas, the said detection area has consecutive depressed structure, there are conducting materials in the said depressed structure, form the detection electrode; and the two ends of the detection electrode are respectively provided with the lapping electrodes which are electrically connected with the detection electrode. According to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed by the concave structure, and the resistance of the detection electrode can be effectively controlled by controlling the width and the depth of the concave structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, the width can be reduced by the concave structure, the material can be saved, and the size of the device can be smaller.
Description
Technical Field
The invention relates to the technical field of electronic device manufacturing, in particular to a temperature detection device.
Background
Temperature detection is closely related to our life and is seen everywhere around us. Conventional temperature detection mainly includes infrared thermopile, thermocouple temperature detection, thermal resistor temperature detection, thermistor temperature detection, and wherein infrared thermopile is the non-contact temperature measurement, and thermocouple temperature detection is fit for measuring and temperature measurement error is great under the high temperature environment, and remaining thermal resistor and thermistor temperature detection have higher temperature measurement precision.
Micro Hot Plate (MHP) based on silicon micromachining technology is a common heating and testing platform in Micro Electro Mechanical Systems (MEMS), and has been widely applied to Micro devices such as Micro thermal flow meters, Micro infrared detectors, barometers, and the like. The micro-hotplate and the thermal resistor are combined to detect the temperature, so that the temperature detection has a high response speed.
At present, common thermal resistor temperature detection is adopted, a core resistor material is usually prepared by physical vapor deposition, the cost is high, and the stability and reliability of a product are poor; moreover, the resistance of the detection electrode or the micro-hotplate is difficult to control, so that the production process is long, the yield is low, and the cost is increased.
Disclosure of Invention
In order to solve the problems, the technical scheme of the invention provides a temperature detection device which has the advantages of good stability and reliability, simple manufacturing process and low manufacturing cost.
In order to achieve the above purpose, the invention provides the following technical scheme:
a temperature sensing device, comprising:
the device comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged;
the detection electrode, the first surface of said basement has detection areas, the said detection area has consecutive depressed structure, there are conducting materials in the said depressed structure, form the detection electrode;
the two ends of the detection electrode are respectively provided with a lapping electrode which is electrically connected with the detection electrode;
wherein, the detection electrode satisfies the following formula: t = (P)T *L- R0(W*(H-h)))/ R0(W x (H-H)). A, T is the temperature to be measured, L is the length of the detection electrode, PTIs the electron blocking parameter, R, of the substance per unit area0The resistance of the detection electrode at 0 ℃, W is the width of the recessed structure, H is the depth of the recessed structure, H is the depth of the recessed structure without the conductive material, and A is a constant.
In one embodiment, a support table is further disposed on one side of the second surface of the substrate, and the support tables are disposed at two ends of the substrate, so that a cavity is formed on the second surface corresponding to the detection region.
In one embodiment, the second surface of the substrate is a non-planar structure, the substrate has at least two oppositely arranged edges with a thickness greater than that of other regions, and the second surface corresponding to the detection region forms a cavity.
In one embodiment, the detection electrode is embedded in the substrate, and the resistance of the detection electrode is greater than that of the lap electrode, wherein the resistance value of the detection electrode is at least twice that of the lap electrode.
In one embodiment, the overlapping electrode is convexly disposed on the surface of the substrate, and the resistance of the overlapping electrode is smaller than the resistance of the detection electrode, wherein the resistance value of the detection electrode is at least twice as large as the resistance value of the overlapping electrode.
In one embodiment, the depth H of the recess structure is equal to the thickness of the substrate, or the depth H is less than the thickness of the substrate.
In one embodiment, the recessed structure is filled with a conductive paste or a conductive ink by printing, and then the conductive paste or the conductive ink is sintered at a high temperature to form the detection electrode.
In one embodiment, the printing method includes screen printing, inkjet printing, gravure printing, letterpress printing, knife coating, spray coating, micro-injection, and the like.
In one embodiment, the width of the recessed structures is varied, and the detection electrodes formed by the recessed structures are formed in a predetermined shape.
In one embodiment, the width of the recess structure is 0.2 μm to 30 μm, the depth is 1 μm to 30 μm, and the ratio of the depth to the width is not less than 0.8.
In one embodiment, the conductive material is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag/Pd alloy and Pt/A u alloy.
As can be seen from the above description, according to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed by the recessed structure, and the resistance of the detection electrode can be effectively controlled by controlling the width and the depth of the recessed structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, and the width can be reduced by the recessed structure, so that the material can be saved, and the volume of the device can be reduced. Meanwhile, compared with expensive chemical vapor deposition and physical vapor deposition equipment, the equipment for forming the detection electrode by sintering the corresponding slurry or ink has lower equipment cost and reduces the manufacturing cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a temperature detection device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a temperature detection device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another temperature detection device provided in an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another temperature detection device provided in the embodiment of the present invention;
fig. 5 is a schematic structural diagram of another temperature detection device provided in an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another temperature detection device provided in an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another temperature detection device provided in an embodiment of the present invention;
fig. 8a to 8c are top views of a temperature detecting device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
A temperature sensing device, comprising:
the device comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged; the substrate can resist the high temperature of at least 100 ℃, so that the substrate can continue to work in the working environment of more than 100 ℃, the performance of a device is not influenced, and the bearable minimum temperature is at least-100 ℃; the substrate can be made of high-temperature-resistant materials such as glass, ceramics, silicon wafers, glass ceramics and the like, and mainly plays a role in supporting or attaching;
the detection electrode, the first surface of said basement has detection areas, the said detection area has consecutive depressed structure, there are conducting materials in the said depressed structure, form the detection electrode; the conductive material in the recessed structure can be arranged in the recessed structure in a plating, printing, filling and other modes, the conductive material can be melted and sintered in a sintering mode, the conductivity of the conductive material is more stable, moreover, the width and the depth of the recessed structure can be designed according to the requirement of the resistor in the design of the recessed structure, the resistor can be preset through the design, and the prepared resistor is closer to a preset target resistor, more accurate and better in controllability; the production process can be greatly reduced, the yield is improved, and the cost is saved; the section of the concave structure can be a triangle, a rectangle, a square, a trapezoid, a special-shaped structure and the like;
the two ends of the detection electrode are respectively provided with a lapping electrode which is electrically connected with the detection electrode; the lapping electrode is connected with the detection electrode, mainly parameter changes of the detection electrode are transmitted to external equipment, a conductive material used by the lapping electrode can be the same as that of the detection electrode, so that signal loss can be reduced, meanwhile, the lapping electrode and the detection electrode can be formed on the first surface at the same time, so that the process complexity is reduced by one-step formation, and the feasibility of mass production is improved; moreover, for devices with low precision requirements, the materials of the lap electrodes can be different conductive materials, and the lap electrodes are formed by silk-screen printing, spot coating and the like;
wherein, the detection electrode satisfies the following formula: t = (P)T *L- R0(W*(H-h)))/ R0(W x (H-H)). A, T is the temperature to be measured, L is the length of the detection electrode, PTIs the electron blocking parameter, R, of the substance per unit area0The resistance of the detection electrode is 0 ℃, W is the width of the concave structure, H is the depth of the concave structure, H is the depth of the concave structure without the conductive material, and A is a constant; this application mainly is through the external temperature of testing electrode test, and external temperature then satisfies this formula, and the width that also can see out sunk structure through the formula has the influence with the degree of depth to the temperature, can obtain external temperature value through the change of measuring the electrical property of testing electrode.
In one embodiment, a support table is further disposed on one side of the second surface of the substrate, and the support tables are disposed at two ends of the substrate, so that a cavity is formed on the second surface corresponding to the detection region; the detection electrode needs to detect the change of the external environment temperature, the support tables are arranged at the two opposite ends of the substrate, so that the detection area is suspended, the thickness of the suspended detection electrode is very thin, the volume is very small, the heat capacity is very small, when the external temperature changes, the resistance of the detection electrode can also respond quickly, and the response speed of the temperature detection device is greatly improved; the supporting table can be made of ceramic materials, microcrystalline glass, silicon wafers and other high-temperature-resistant materials, can bear a wide temperature change range, ensures that the working environment range of the detection electrode is wide, and ensures the normal work of the detection electrode.
In one embodiment, the second surface of the substrate is a non-planar structure, and the substrate has at least two oppositely disposed edges with a thickness greater than that of other regions, so that the second surface corresponding to the detection region forms a cavity, which is equivalent to the support platform and the substrate in the previous embodiment as an integral structure, and is integral with the substrate, except that the thickness corresponding to the detection electrode region is relatively thin, and the first surface of the substrate is a flat surface (excluding the recess structure or the landing electrode disposed on the first surface).
In one embodiment, the lapping electrode is embedded in the substrate, and the resistance of the lapping electrode is smaller than that of the detection electrode; or the lapping electrode is convexly arranged on the surface of the substrate, and the resistance of the lapping electrode is smaller than that of the detection electrode, and the two structures are as follows: the resistance value of the detection electrode is at least one time of that of the lapping electrode; because the energy consumption of the device is very important, on the premise that the detection electrode can meet the requirements of the device, the smaller the resistance of other conducting parts which do not relate to detection, the better, so that the energy consumption of the device can be effectively reduced, and the resistance of the lap joint electrode is required to be smaller.
In one embodiment, the depth H of the recessed structure is equal to the thickness of the substrate, or the depth H is less than the thickness of the substrate; defining the relation between the thickness of the concave structure and the thickness of the substrate, wherein the detection electrode has different structures, when the thickness of the concave structure is equal to the thickness of the substrate, the concave structure is equivalent to a through hole, in other words, the detection electrode penetrates through the substrate in the thickness direction, and at least two surfaces of the conductive material of the detection electrode are in contact with air; when the thickness of the recessed structure is smaller than that of the substrate, the detection electrode is embedded in the substrate, but the conductive material in the recessed structure does not necessarily fill the recessed structure.
In one embodiment, the recessed structure is filled with a conductive material in a filling mode, then the conductive material is sintered to form the detection electrode, the conductive material is made to form the detection electrode more stably in a sintering mode, expensive physical vapor deposition equipment and chemical vapor deposition equipment are not needed in the method, the detection electrode of the detection device can be formed through low-cost non-vacuum printing, drying and sintering processes, the manufacturing cost is low, the high-temperature-resistant detection electrode can be formed, and the stability and reliability of a product are improved.
In one embodiment, the width change of the concave structure is set, the detection electrode formed by the concave structure is in a preset shape, the width change is set on the basis of certain depth, so that the resistance of the detection electrode is changed, the effect of reducing power consumption is achieved by changing the resistance of the detection electrode, the resistance of an effective area of the detection electrode is guaranteed on the premise of reducing the resistance of an ineffective area, and the shape of the detection electrode can be mosquito-repellent incense type, snake shape, broken line type and the like.
In one embodiment, the width of the concave structure is 0.2-30 μm, the depth is 1-30 μm, and the ratio of the depth to the width is not less than 0.8.
In one embodiment, the conductive material is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag/Pd alloy and Pt/A u alloy, different conductive materials can be selected according to different product requirements to achieve different functions or different precisions, and when different metal materials are used as the conductive materials, formation of micro-batteries between the conductive materials is not avoided.
Referring to fig. 1, a temperature detecting device includes a substrate 11, a detecting electrode 20 and a bonding electrode 21; the substrate 11 includes a first surface and a second surface, the first surface is provided with a recessed structure, a conductive material is disposed in the recessed structure to form a detection electrode 20, an overlapping electrode 21 is disposed on an edge of the first surface of the substrate, the overlapping electrode 21 is electrically connected to the detection electrode 20, the overlapping electrode 21 is not necessarily disposed on an edge of the substrate 11, and the main purpose is to electrically connect the overlapping electrode 21 to the detection electrode 20, the specific position is described according to the schematic diagram, at this time, the first surface of the substrate 11 is a plane, the overlapping electrode 21 is disposed on the plane and has a protruding structure, which is higher than the first surface of the substrate 11; the second surface of the substrate 11 is further provided with a support table 10, the support table 10 is arranged at the edge of the substrate 11, so that a cavity is formed in a region corresponding to the detection electrode 20, and the detection electrode 20 is more completely contacted with the surrounding environment; the substrate 11 can be glass, ceramic, silicon chip or combination of the three, and the conductive material can be any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag/Pd alloy and Pt/A u alloy; the depth of the concave structure is 1 μm, 5 μm, 10 μm, 15 μm, 20um, 25 um; widths of 0.2 μm, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25um, 30 um.
Referring to fig. 2, the structure of the overlapping electrode 21 is changed on the basis of fig. 1, the overlapping electrode 21 is embedded in the first surface of the substrate 11, the overlapping electrode 21 is electrically connected to the detection electrode 20, the recess structure of the detection electrode and the recess structure of the overlapping electrode of the device with the structure are completed in one step through the same process, so that the process cost can be saved, the detection electrode 20 and the overlapping electrode 21 are formed in one step through filling a conductive material and a sintering process, the process is simple, the overlapping electrode 21 is not protruded on the first surface of the substrate 11, and the first surface of the substrate 11 is an approximate plane.
Referring to fig. 3, a temperature detecting device includes a substrate 12, a detecting electrode 20 and a bonding electrode 21; the substrate 12 includes a first surface and a second surface, the first surface is provided with a recessed structure, a conductive material is arranged in the recessed structure to form a detection electrode 20, the edge of the first surface of the substrate 12 is provided with a lapping electrode 21, the lapping electrode 21 is electrically connected with the detection electrode 20, the second surface of the substrate 12 is a non-planar structure, that is, the thickness of the edge of the substrate 12 is greater than that of the detection electrode 20, so that the detection electrode 20 forms a cavity corresponding to the second surface region, and the first surface of the substrate 12 is still a plane. The detection electrode 20 in this embodiment may penetrate the substrate 12 (not shown), i.e. the depth of the recess structure is equal to the thickness of the substrate 12, which corresponds to a perforation.
Referring to fig. 4, in the detecting electrode 22 of the temperature detecting device, the recessed structure of the detecting electrode 22 is not filled up, so that there is a blank above the recessed structure, and referring to fig. 7, the width of the recessed structure is W, the depth of the recessed structure is H, and the depth of the recessed structure without the conductive material is Hh; wherein the difference between H and H is more than 0.05 μm, and certainly, the difference can be 0.1 μm, 0.2 μm, 0.3 μm, 0.5 μm and 0.8 μm to meet the requirement of resistance; and the detection electrode satisfies the following formula: t = (P)T *L- R0(W*(H-h)))/ R0(W x (H-H)). A, T is the temperature to be measured, L is the length of the detection electrode, PTIs obtained by measuring the electron blocking parameter of the substance in unit area, R0The resistance of the electrode is detected at 0 ℃, W is the width of the concave structure, H is the depth of the concave structure, H is the depth of the concave structure without the conductive material, A is a constant, but the conductive material is platinum A which is generally 0.0039, the size of A can be different when the material of the conductive material is changed, but A is still a constant, and A mainly represents the change of the resistance when the temperature of the resistance of different materials is changed by 1 degree.
Referring to fig. 5, a temperature detecting device includes a substrate 13, a detecting electrode 20 and a bonding electrode 21; the substrate 13 includes a first surface and a second surface, the first surface is provided with a recessed structure, a conductive material is disposed in the recessed structure to form a detection electrode 20, the edge of the first surface of the substrate 13 is provided with a lapping electrode 21, the lapping electrode 21 is electrically connected with the detection electrode 20, the second surface of the substrate 13 is a planar structure, the first surface of the substrate 13 is still a plane, the detection electrode 20 has no cavity corresponding thereto, and no cavity exists on the opposite side.
Referring to fig. 6, a temperature detecting device includes a substrate 13, a detecting electrode 20, a protective layer 30 and a bonding electrode 21; the substrate 13 comprises a first surface and a second surface, the first surface is provided with a recessed structure, a conductive material is arranged in the recessed structure to form a detection electrode 20, the surface of the detection electrode 20 is provided with a protective layer 30, the edge of the first surface of the substrate 13 is provided with a lapping electrode 21, and the lapping electrode 21 is electrically connected with the detection electrode 20; the protective layer 30 in this embodiment may be a protective glaze, which can well protect the detection electrode 20, and certainly, in order to ensure the working sensitivity of the detection electrode, the thickness of the protective layer 30 is not greater than 100 μm, and the protective layer may be provided in the above embodiments to protect the detection electrode.
Referring to fig. 8a to 8c, a top view of a front surface of a temperature detecting device of the present invention is disclosed, which is only a schematic view, and it can be seen that the shapes of the detecting electrodes 20 and 22 and the bonding electrode 21 can be seen as the serpentine 200 shown in the figure and the bonding electrode 210 are connected; or the broken line type 201 is connected with the lapping electrode 211, or the mosquito-repellent incense type 203 is connected with the lapping electrode 213; fig. 8a to 8c are only a simple list of device shapes, but in practice, there are many shapes that may be used, and they are not listed in an exhaustive list.
As can be seen from the above description, according to the temperature detection device provided by the technical scheme of the invention, the detection electrode is formed by the recessed structure, and the resistance of the detection electrode can be effectively regulated and controlled by controlling the width and the depth of the recessed structure, so that the preparation process can be greatly simplified, the detection accuracy of the detection electrode is higher, the width can be reduced by the recessed structure, the material can be saved, and the volume of the device can be reduced. Meanwhile, the equipment for forming the detection electrode by sintering the corresponding slurry is lower in equipment cost and lower in manufacturing cost compared with chemical vapor deposition and physical vapor deposition equipment.
In the description of the embodiments, each embodiment is described with a focus on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other, may be shared, or may be combined with each other instead.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A temperature sensing device, comprising:
the device comprises a substrate, a first electrode and a second electrode, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged;
the detection electrode, the first surface of said basement has detection areas, the said detection area has consecutive depressed structure, there are conducting materials in the said depressed structure, form the detection electrode;
the two ends of the detection electrode are respectively provided with a lapping electrode which is electrically connected with the detection electrode;
wherein, the detection electrode satisfies the following formula: t = (P)T *L- R0(W*(H-h)))/ R0(W x (H-H)). A, T is the temperature to be measured, L is the length of the detection electrode, PTIs the electron blocking parameter, R, of the substance per unit area0The resistance of the detection electrode at 0 ℃, W is the width of the recessed structure, H is the depth of the recessed structure, H is the depth of the recessed structure without the conductive material, and A is a constant.
2. The device as claimed in claim 1, wherein a support is further disposed on one side of the second surface of the substrate, the support is disposed at two ends of the substrate, so that the second surface corresponding to the detection region forms a cavity.
3. The device as claimed in claim 1, wherein the second surface of the substrate is a non-planar structure, and the substrate has at least two oppositely disposed edges with a thickness greater than that of the other regions so that the second surface corresponding to the detection region forms a cavity.
4. The device according to any one of claims 1 to 3, wherein the bonding electrode is embedded in the substrate, and the resistance of the bonding electrode is smaller than the resistance of the sensing electrode, wherein the resistance of the sensing electrode is at least twice as large as the resistance of the bonding electrode.
5. The device according to any one of claims 1 to 3, wherein the bonding electrode is protruded on the surface of the substrate, and the resistance of the bonding electrode is smaller than that of the detection electrode, wherein the resistance value of the detection electrode is at least twice as large as that of the bonding electrode.
6. The device according to any of claims 1 to 5, wherein the depth H of the recessed structure is equal to the thickness of the substrate, or the depth H is less than the thickness of the substrate.
7. The device as claimed in claim 1, wherein the recessed structure is filled with a conductive material by filling, and then the conductive material is sintered to form the sensing electrode.
8. The device as claimed in claim 1, wherein the width of the recessed structure varies and the sensing electrode formed by the recessed structure is formed in a predetermined shape.
9. The temperature detecting device according to claim 1, wherein the width of the recess structure is 0.2 μm to 20 μm, the depth is 1 μm to 20 μm, and the depth-to-width ratio is not less than 0.8.
10. A temperature sensing device according to claim 1, wherein said conductive material is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag/Pd alloy and Pt/A u alloy.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021106890878 | 2021-06-22 | ||
| CN202110689087 | 2021-06-22 |
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| Publication Number | Publication Date |
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| CN113514163A true CN113514163A (en) | 2021-10-19 |
| CN113514163B CN113514163B (en) | 2024-01-12 |
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| CN215114917U (en) | 2021-12-10 |
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