CN116773051A - High-temperature heat flow sensor - Google Patents
High-temperature heat flow sensor Download PDFInfo
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- CN116773051A CN116773051A CN202310737237.7A CN202310737237A CN116773051A CN 116773051 A CN116773051 A CN 116773051A CN 202310737237 A CN202310737237 A CN 202310737237A CN 116773051 A CN116773051 A CN 116773051A
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- thermal resistance
- resistance layer
- heat flow
- flow sensor
- thin film
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- 238000001514 detection method Methods 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 238000005289 physical deposition Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Measuring Volume Flow (AREA)
Abstract
The application relates to a heat flow sensor, in particular to a high-temperature heat flow sensor, which comprises a heat sink body, a heat flow detection element and a heat conduction cover, wherein the heat flow detection element is embedded into a groove arranged at the top of the heat sink body and is pressed by the heat conduction cover which is arranged in the groove and is arranged at the top of the heat flow detection element; the heat flow detection element comprises a substrate, a thin film electrode and a thermal resistance layer, wherein the substrate is positioned at a bottom layer, the thin film electrode is arranged at the top of the substrate, the thermal resistance layer is arranged at the top of the thin film electrode, the thermal resistance layer is provided with a second thermal resistance layer positioned at the middle part and a first thermal resistance layer surrounding the outer side of the second thermal resistance layer, the thickness of the first thermal resistance layer is larger than that of the second thermal resistance layer to form a thermal resistance layer step, and the outer edge in the first thermal resistance layer is pressed on the substrate so that the outer edge of the thin film electrode is connected with the first thermal resistance layer.
Description
Technical Field
The present application relates to a heat flow sensor, and more particularly, to a high temperature heat flow sensor.
Background
With the development of intelligent technology in various industries, more and more high Wen Changjing needs to obtain heat flow accurately. Such as the extremely large heat flow which can cause fatal damage around the aircraft, the heat flow of the combustion chamber under the high-speed running condition of the engine and the heat flow of the continuous casting crystallizer in the metallurgical field, and the acquisition of the heat flow information has very important significance for life assessment and safety planning. The high-temperature measurement technology in China starts later, and no good solution exists at present.
At present, the sensors for detecting heat flow are of a plurality of types, but the heat flow perpendicular to the wall surface direction is detected by a mature circular foil type heat flow sensor only, and the circular foil type heat flow sensor has the advantages of simple structure, small volume and large measuring range, but has the defects that radiation heat flow and convection heat flow can only be monitored, and the circular foil type heat flow sensor is influenced by the temperature resistance of elements and is not suitable for working at high temperature for a long time.
Disclosure of Invention
In view of the above, the present application is directed to a high-temperature heat flow sensor to solve the problem that the conventional high-temperature heat flow sensor is not suitable for long-time operation at high temperature.
In order to achieve the above purpose, the present application provides the following technical solutions:
the heat flow detection element is embedded into a groove arranged at the top of the heat sink body and is pressed by the heat conduction cover which is arranged in the groove and is arranged at the top of the heat flow detection element; the heat flow detection element comprises a substrate, a thin film electrode and a thermal resistance layer, wherein the substrate is positioned at a bottom layer, the thin film electrode is arranged at the top of the substrate, the thermal resistance layer is arranged at the top of the thin film electrode, the thermal resistance layer is provided with a second thermal resistance layer positioned at the middle part and a first thermal resistance layer surrounding the outer side of the second thermal resistance layer, the thickness of the first thermal resistance layer is larger than that of the second thermal resistance layer to form a thermal resistance layer step, and the outer edge in the first thermal resistance layer is pressed on the substrate so that the outer edge of the thin film electrode is connected with the first thermal resistance layer.
Further, a first through hole connected with the heat flow detection element is arranged on one side, close to the bottom of the heat flow detection element, of the heat sink body, and a second through hole connected with the first through hole is further arranged on the substrate, so that a lead connected with the thin film electrode is led out through the first through hole and the second through hole.
Further, a lead tube is sleeved on the lead to insulate the lead from the heat sink body.
Further, the bottom of the heat sink body is provided with a mounting platform, and the mounting platform is also provided with mounting holes so as to facilitate the mounting and fixing of the high-temperature heat flow sensor.
Further, the heat sink body is made of oxygen-free copper or pure copper.
Further, the material of the substrate is alumina, silicon carbide or silicon oxide.
Further, the thin film electrode is a thermopile formed by n groups of thin film thermocouples connected end to end, a cold junction point of the thermopile is positioned on the first thermal resistance layer, and a hot junction point of the thermopile is positioned on the second thermal resistance layer.
Further, the thermal resistance layer material is silicon dioxide or aluminum oxide.
Further, the thermal resistance layer step between the first thermal resistance layer and the second thermal resistance layer is obtained by a physical deposition method or a chemical deposition method.
Further, the material of the heat conduction cover is pure copper, diamond, pure silver, graphite, zinc, tungsten, aluminum nitride or pure gold.
The application has the beneficial effects that:
1. according to the high-temperature heat flow sensor provided by the application, the heat sink body with the volume which is tens of times of that of the heat flow detection element is designed, the heat flow detection element is embedded into the groove arranged at the top of the heat sink body, and the heat conduction cover which is arranged in the groove and is arranged at the top of the heat flow detection element is used for compressing, so that the heat on the sensor can be rapidly dissipated, the measurement accuracy in a steady state is ensured, and the sensor is protected from being damaged in a high-temperature environment for a long time.
And secondly, the first through holes are arranged at the positions corresponding to the heat sink body and the heat flow detection element, and the measuring signals of the heat flow detection element are led out by matching with a probe lead method, so that the flatness of the measuring surface of the heat flow detection element is ensured, the measuring accuracy is improved, and meanwhile, the reliability of leads and the stability of signal transmission are also improved.
2. In order to improve the response, the application also designs the heat conduction cover buckled on the heat flow detection element, which can rapidly transfer the heat flow of the object to be detected to the heat flow detection element, and the temperature difference of cold and hot is only caused by the height difference of the heat resistance layer, thereby reducing the measurement error and having physical protection function.
Additional advantages, objects, and features of the application will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the application. The objects and other advantages of the application may be realized and obtained by means of the instrumentalities and combinations particularly pointed out in the specification.
Drawings
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the present application will be described in the following preferred detail with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a high temperature heat flow sensor according to the present application;
FIG. 2 is a schematic diagram of the assembly relationship of the thermal flow detection element, the heat conducting cover, the ceramic lead tube and the heat sink body in the present application;
FIG. 3 is a schematic diagram of a thermal flow detection element of the present application.
Reference numerals: the heat sink body 1, the groove 101, the first through hole 102, the mounting platform 103, the mounting hole 1031, the heat flow detection element 2, the thermal resistance layer 201, the first thermal resistance layer 2011, the second thermal resistance layer 2012, the thin film electrode 202, the substrate 203, the second through hole 2031, the heat conduction cover 3, the lead pipe 4 and the lead 401.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. It should be noted that the illustrations provided in the following embodiments merely illustrate the basic idea of the present application by way of illustration, and the following embodiments and features in the embodiments may be combined with each other without conflict.
Wherein the drawings are for illustrative purposes only and are shown in schematic, non-physical, and not intended to limit the application; for the purpose of better illustrating embodiments of the application, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the size of the actual product; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numbers in the drawings of embodiments of the application correspond to the same or similar components; in the description of the present application, it should be understood that, if there are terms such as "upper", "lower", "left", "right", "front", "rear", etc., that indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, it is only for convenience of describing the present application and simplifying the description, but not for indicating or suggesting that the referred device or element must have a specific azimuth, be constructed and operated in a specific azimuth, so that the terms describing the positional relationship in the drawings are merely for exemplary illustration and should not be construed as limiting the present application, and that the specific meaning of the above terms may be understood by those of ordinary skill in the art according to the specific circumstances.
Referring to fig. 1 to 3, a high temperature heat flow sensor includes a heat sink body 1, a heat flow detecting element 2, a heat conducting cover 3 and a lead pipe 4, wherein the heat flow detecting element 2 is embedded in a groove 101 arranged at the top of the heat sink body 1 through interference fit, and is pressed by the heat conducting cover 3; and a first through hole 102 connected with the heat flow detection element 2 is arranged on one side of the heat sink body 1 near the bottom of the heat flow detection element 2, a lead tube 4 passes through the through hole and is connected with an external lead 401 through a lead 401 arranged in the lead tube 4 to output signals on the heat flow detection element 2, and the lead tube 4 is used for insulation between the lead 401 and the heat sink body 1.
Specifically, the heat sink body 1 is made of oxygen-free copper or pure copper, the shape is the most optimal cylinder from the viewpoint of machining, the bottom is provided with a mounting platform 103, and the mounting platform 103 is further provided with a mounting hole 1031, so that the high-temperature heat flow sensor is conveniently mounted and fixed, the volume of the heat sink body 1 is more than ten times that of the heat flow detection element 2, and the heat sink body 1 can be adaptively adjusted as required in the practical application process, and is preferably 20 times in the embodiment.
Referring to fig. 3 with emphasis, the heat flow detecting element 2 includes a substrate 203, a thin film electrode 202, and a thermal resistance layer 201, where the thermal resistance layer 201 has a thin thermal resistance layer in the middle and a thick thermal resistance layer surrounding the thin thermal resistance layer, the thick thermal resistance layer is a first thermal resistance layer 2011, the thin thermal resistance layer 201 is a second thermal resistance layer 2012, that is, the thickness of the first thermal resistance layer 2011 is greater than that of the second thermal resistance layer 2012 to form a thermal resistance layer step, the substrate 203 is located at the bottom, the thin film electrode 202 is disposed on the top of the substrate 203, and an outer edge of the thick thermal resistance layer 201 in the thermal resistance layer 201 presses on the substrate 203, so that the outer edge of the thin film electrode 202 is connected with the thick thermal resistance layer 201; the substrate 203 is further provided with a second through hole 2031 connected with the first through hole 102, so that the lead 401 connected with the membrane electrode 202 is connected to the lead tube 4. And the heat flow detecting element 2 is formed by processing through a MEMS process and can be used at a high temperature.
The material of the substrate 203 in the heat flow detecting element 2 should be a relatively stable and non-conductive material at high temperature, such as alumina, silicon carbide or silicon oxide.
The thin film electrode 202 of the heat flow detection element 2 is a thermopile composed of n groups of thin film thermocouples connected end to end, the cold junction is located on the thick thermal resistance layer 201, and the hot junction is located on the Bao Rezu layer 201. The minimum of n groups is 2, the maximum is infinite, and the n groups can be adaptively adjusted according to the actual signal amplification requirement, and 45 groups are arranged in the application.
The material of the thermal resistance layer 201 of the heat flow detecting element 2 may be silicon dioxide or aluminum oxide.
The step of the thermal resistance layer 201 between the thick thermal resistance layer 201 and the thin thermal resistance layer 201 of the heat flow detection element 2 can be obtained by a physical deposition method or can be obtained by a chemical deposition method, the thickness of the thick thermal resistance layer 201 is generally 2-5 μm, the thickness of the thin thermal resistance layer 201 is generally 500nm-1 μm, and the steps can be adjusted according to the requirements and the equipment conditions, but the accurate thickness needs to be controlled, and the thickness of the thick thermal resistance layer is 2 μm and the thickness of the thin thermal resistance layer is 500nm in the application. The step of the thermal resistance layer 201 between the thick thermal resistance layer 201 and the thin thermal resistance layer 201 of the heat flow detection element 2 can also be obtained by etching or two separate sputtering.
The heat flow detection element 2 outputs signals through the connection of the through holes in the heat sink body 1 and the lead wires 401 arranged in the lead wire tube 4 in a matched mode and an external lead wire, and the problem that the surface of the thin film electrode 202 is uneven due to the fact that the lead wires 401 connected to the bottom of the thin film electrode 202 are connected out from the side face and then the temperature of the cold end or the hot end is inconsistent can be avoided.
The material of the thermally conductive cover 3 is of high thermal conductivity, such as, but not limited to, pure copper, which protects the heat flow detecting element 2 and is thermally conductive rapidly, improving responsiveness.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present application and not for limiting the same, and although the present application has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the present application, which is intended to be covered by the claims of the present application.
Claims (10)
1. A high temperature heat flow sensor, characterized by: the heat flow detection device comprises a heat sink body, a heat flow detection element and a heat conduction cover, wherein the heat flow detection element is embedded into a groove arranged at the top of the heat sink body and is pressed by the heat conduction cover which is arranged in the groove and is positioned at the top of the heat flow detection element;
the heat flow detection element comprises a substrate, a thin film electrode and a thermal resistance layer, wherein the substrate is positioned at a bottom layer, the thin film electrode is arranged at the top of the substrate, the thermal resistance layer is arranged at the top of the thin film electrode, the thermal resistance layer is provided with a second thermal resistance layer positioned at the middle part and a first thermal resistance layer surrounding the outer side of the second thermal resistance layer, the thickness of the first thermal resistance layer is larger than that of the second thermal resistance layer to form a thermal resistance layer step, and the outer edge in the first thermal resistance layer is pressed on the substrate so that the outer edge of the thin film electrode is connected with the first thermal resistance layer.
2. The high temperature heat flow sensor of claim 1, wherein: the heat sink body is provided with a first through hole connected with the heat flow detection element at one side close to the bottom of the heat flow detection element, and a second through hole connected with the first through hole is also arranged on the substrate so as to lead out a lead connected with the thin film electrode through the first through hole and the second through hole.
3. The high temperature heat flow sensor of claim 2, wherein: and a lead tube is sleeved on the lead to realize insulation between the lead and the heat sink body.
4. The high temperature heat flow sensor of claim 1, wherein: the bottom of the heat sink body is provided with a mounting platform, and the mounting platform is also provided with mounting holes so as to facilitate the mounting and fixing of the high-temperature heat flow sensor.
5. The high temperature heat flow sensor of claim 1, wherein: the heat sink body is made of oxygen-free copper or pure copper.
6. The high temperature heat flow sensor of claim 1, wherein: the substrate is made of aluminum oxide, silicon carbide or silicon oxide.
7. The high temperature heat flow sensor of claim 1, wherein: the thin film electrode is a thermopile formed by n groups of thin film thermocouples connected end to end, a cold junction point of the thermopile is positioned on the first thermal resistance layer, and a hot junction point of the thermopile is positioned on the second thermal resistance layer.
8. The high temperature heat flow sensor of claim 1, wherein: the thermal resistance layer material is silicon dioxide or aluminum oxide.
9. The high temperature heat flow sensor of claim 1, wherein: the thermal resistance layer step between the first thermal resistance layer and the second thermal resistance layer is obtained by a physical deposition method or a chemical deposition method.
10. The high temperature heat flow sensor of claim 1, wherein: the heat conducting cover is made of pure copper, diamond, pure silver, graphite, zinc, tungsten, aluminum nitride or pure gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310737237.7A CN116773051A (en) | 2023-06-20 | 2023-06-20 | High-temperature heat flow sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310737237.7A CN116773051A (en) | 2023-06-20 | 2023-06-20 | High-temperature heat flow sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116773051A true CN116773051A (en) | 2023-09-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310737237.7A Pending CN116773051A (en) | 2023-06-20 | 2023-06-20 | High-temperature heat flow sensor |
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| Country | Link |
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| CN (1) | CN116773051A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117871027A (en) * | 2024-03-11 | 2024-04-12 | 中国航空工业集团公司沈阳空气动力研究所 | Columnar heat flow sensor and array preparation method thereof |
-
2023
- 2023-06-20 CN CN202310737237.7A patent/CN116773051A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117871027A (en) * | 2024-03-11 | 2024-04-12 | 中国航空工业集团公司沈阳空气动力研究所 | Columnar heat flow sensor and array preparation method thereof |
| CN117871027B (en) * | 2024-03-11 | 2024-05-07 | 中国航空工业集团公司沈阳空气动力研究所 | Columnar heat flow sensor and array preparation method thereof |
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