CN113506779A - Integrated power module with enhanced heat dissipation structure - Google Patents
Integrated power module with enhanced heat dissipation structure Download PDFInfo
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- CN113506779A CN113506779A CN202110575602.XA CN202110575602A CN113506779A CN 113506779 A CN113506779 A CN 113506779A CN 202110575602 A CN202110575602 A CN 202110575602A CN 113506779 A CN113506779 A CN 113506779A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an integrated power module with an enhanced heat dissipation structure, which comprises a power module main body, the enhanced heat dissipation structure and a silica gel packaging structure, wherein the power module main body is packaged in the silica gel packaging structure; the enhanced heat dissipation structure comprises a plurality of heat dissipation plates and a plurality of heat dissipation leads, and the heat dissipation plates are arranged outside the silica gel packaging structure in parallel; every the middle part of heat dissipation lead all passes silica gel packaging structure, just one end bonding of heat dissipation lead is to one the heating panel, the other end bonding to the power module main part, be used for with the heat that produces in the power module main part leads to the heating panel. The integrated power module is characterized in that the power module main body is connected to a heat dissipation plate positioned on the outer side of the silica gel packaging structure through a heat dissipation lead, so that the heat dissipation capacity of the integrated power module can be obviously enhanced.
Description
Technical Field
The invention belongs to the technical field of integrated power modules, and particularly relates to an integrated power module with a reinforced heat dissipation structure.
Background
With the development of the technology, the requirements on high voltage, large current, high power, small volume and the like of a power electronic device are continuously improved, so that the performance of a single device is quite obvious, and therefore a plurality of power semiconductor modules are connected in a series-parallel connection mode to improve the voltage and current level or realize specific electrical functions. These power modules are integrated in a package and collectively dissipate heat using the same heat dissipation substrate, which is the mainstream of power semiconductor development today.
The integrated power module improves the condition that the voltage and current level of a single device is low, provides abundant voltage and current combinations, compresses the packaging volume, and reduces the volume of a radiator by the advantage of concentrated heat dissipation, thereby greatly reducing the occupied area of the integrated power module in an application system, better improving the efficiency and performance of a power electronic device, and better converting and utilizing energy sources, so that the integrated power module is more and more applied to power electronic systems.
However, high packing density leads to higher power density and higher operating temperature, which leads to increased failure rate and reduced reliability. The statistical analysis of related data shows that the failure rate is doubled when the working temperature of the device rises by 10 ℃, and the change of the temperature can cause strain failure of materials of each layer of the module due to different thermal expansion coefficients, so how to improve the heat dissipation efficiency of the integrated power module becomes a problem to be solved urgently in the power electronic industry.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides an integrated power module having an enhanced heat dissipation structure. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides an integrated power module with an enhanced heat dissipation structure, which comprises a power module main body, the enhanced heat dissipation structure and a silica gel packaging structure, wherein,
the power module main body is packaged inside the silica gel packaging structure;
the enhanced heat dissipation structure comprises a plurality of heat dissipation plates and a plurality of heat dissipation leads, and the heat dissipation plates are arranged outside the silica gel packaging structure in parallel;
every the middle part of heat dissipation lead all passes silica gel packaging structure, just one end bonding of heat dissipation lead is to one the heating panel, the other end bonding to the power module main part, be used for with the heat that produces in the power module main part leads to the heating panel.
In one embodiment of the invention, the power module main body comprises a functional lead, a power chip and a direct copper-clad plate arranged on the lower surface of the power chip, wherein,
the power chip sequentially comprises a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a chip main body from top to bottom;
a plurality of heat dissipation lead bonding points are arranged on the first metal layer, one end of each heat dissipation lead is bonded to the heat dissipation plate, and the other end of each heat dissipation lead is bonded to the heat dissipation lead bonding points;
and a plurality of functional lead bonding points are arranged on the upper surface of the second metal layer, which is not covered by the first metal layer and the first insulating layer, one end of each functional lead is bonded to the functional lead bonding point, and the other end of each functional lead is bonded to the direct copper-clad plate or other power chips.
In one embodiment of the present invention, the thickness of the first metal layer is three times the thickness of the second metal layer, and the thickness of the first insulating layer is two times the thickness of the second insulating layer.
In one embodiment of the present invention, the plurality of heat dissipating wire bond pad arrays are arranged on the first metal layer, and the plurality of functional wire bond pad arrays are arranged on the second metal layer.
In one embodiment of the present invention, the ratio of the spacing between adjacent heat dissipating wire bonds to the length of the heat dissipating wire bonds itself is 1.5-2.5.
In an embodiment of the invention, the plurality of heat dissipation plates are all spaced apart from the silicon gel packaging structure, and a distance between adjacent heat dissipation plates is 1.5-2.5 times a distance between adjacent heat dissipation lead bonding points.
In an embodiment of the present invention, a vertical distance between the lower surface of the heat dissipation plate and the direct copper-clad plate is x1 ═ 1+ s ═ 1+ Δ × 2, where x2 is a vertical distance between a vertex of a maximum radian of the functional lead and the direct copper-clad plate, s is a material shrinkage rate of the silicone encapsulation structure, and Δ is 10% to 20%.
In one embodiment of the present invention, a section of the heat dissipation lead located outside the silicone encapsulation structure is covered by a conductive adhesive and cured.
In one embodiment of the present invention, a reverse biased diode is disposed between the heat dissipation plate and the ground terminal.
In one embodiment of the present invention, each of the heat dissipation plates is connected to the power module main body through at least one of the heat dissipation leads.
Compared with the prior art, the invention has the beneficial effects that:
1. the integrated power module with the enhanced heat dissipation structure is characterized in that the power module main body is connected to the heat dissipation plate positioned on the outer side of the silica gel packaging structure through the heat dissipation lead, so that the heat dissipation capability of the integrated power module can be remarkably enhanced.
2. The power chip is divided into the heat dissipation lead bonding area positioned on the first metal layer and the functional lead bonding area positioned on the second metal layer, so that the reliability reduction of the power chip caused by the simultaneous bonding of the functional lead and the heat dissipation lead on the same metal layer is avoided.
3. The integrated power module has the advantages of simple structure, easy batch processing, convenient use and the like, and has better engineering application feasibility.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an integrated power module with an enhanced heat dissipation structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a power chip according to an embodiment of the present invention;
fig. 3 is a top view of a power chip according to an embodiment of the invention;
FIG. 4 is a cross-sectional view of FIG. 3 taken along line M-M;
fig. 5 is a schematic configuration diagram showing a positional relationship among the heat sink, the power chip, and the functional leads.
Description of reference numerals:
1-a power module body; 101-functional leads; 102-a power chip; 1021-a first metal layer; 1022 — a first insulating layer; 1023-a second metal layer; 1024 — a second insulating layer; 1025-chip body; 1026 — heat sink wire bond site; 1027-functional wire bond; 103-direct copper clad laminate; 104-a substrate; 105-a heat sink layer; 2-enhancing the heat dissipation structure; 201-heat dissipation plate; 202-heat dissipation leads; 203-reverse bias diode; 3-a silica gel packaging structure; 4-a housing; a-a heat dissipating wire bonding region; b-functional wire bonding regions.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, an integrated power module with an enhanced heat dissipation structure according to the present invention is described in detail below with reference to the accompanying drawings and the detailed description.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an integrated power module with an enhanced heat dissipation structure according to an embodiment of the present invention. The integrated power module of the embodiment comprises a power module main body 1, a reinforced heat dissipation structure 2 and a silica gel packaging structure 3, wherein the power module main body 1 is packaged inside the silica gel packaging structure 3, and the silica gel packaging structure 3 is used for protecting the internal material and structure of the power module main body 1 and preventing external substances such as water vapor and the like from entering to damage the power module main body 1; the enhanced heat dissipation structure 2 is used for providing a heat dissipation effect for the power module main body 1, the enhanced heat dissipation structure 2 comprises a plurality of heat dissipation plates 201 and a plurality of heat dissipation leads 202, and the plurality of heat dissipation plates 201 are arranged outside the silica gel packaging structure 3 in parallel; the middle part of each heat dissipation lead 202 passes through the silica gel packaging structure 3, and one end of the heat dissipation lead 202 is bonded to one heat dissipation plate 201, and the other end is bonded to the power chip in the power module main body 1, so as to guide heat generated on the power module main body 1 to the heat dissipation plate 201, thereby reducing the temperature of the power module main body 1.
Specifically, the power module body 1 includes a functional lead 101, a power chip 102, and a direct copper clad laminate 103 disposed on a lower surface of the power chip 102. The power chip 102 is the main heat generating component in the integrated power module, i.e., the heat dissipation plate 201 and the heat dissipation leads 202 are used for dissipating heat. The Direct Copper clad plate 103 is also called a DBC (Direct Bonding Copper, DBC) plate, and is a main bearer of stress of the power chip 102, and is used for realizing electrical connection between chips and terminals. One end of the functional lead 101 is bonded to the power chip 102, and the other end is bonded to the direct copper clad laminate 103 for forming an electrical connection between the power chip 102 and the direct copper clad laminate 103, so as to realize the function of the integrated power module design.
Specifically, please refer to fig. 2 to 4, fig. 2 is a schematic structural diagram of a power chip according to an embodiment of the present invention; fig. 3 is a top view of a power chip according to an embodiment of the invention; fig. 4 is a cross-sectional view of fig. 3 taken along line M-M. The power chip 102 of the present embodiment includes, from top to bottom, a first metal layer 1021, a first insulating layer 1022, a second metal layer 1023, a second insulating layer 1024, and a chip body 1025. A plurality of heat dissipation wire bonding points 1026 are disposed on the first metal layer 1021 to form a heat dissipation wire bonding area a of the integrated power module, specifically, one end of the heat dissipation wire 202 is bonded to the heat dissipation plate 201, and the other end is bonded to the heat dissipation wire bonding points 1026 located on the first metal layer 1021. In other words, the heat dissipation wire bonding regions a are bonding regions of the heat dissipation wires 202, and the heat dissipation wires 202 can dissipate heat generated from the chip body 1025 via the heat dissipation plate 201.
Further, a plurality of functional wire bonding points 1027 are disposed on the upper surface of the second metal layer 1023 not covered by the first metal layer 1021 and the first insulating layer 1022, forming a functional wire bonding area B of the integrated power module, specifically, one end of the functional wire 101 is bonded to the functional wire bonding point 1027 on the second metal layer 1023, and the other end is bonded to the direct copper clad plate 103 or other power chips. That is, functional wire bond regions B are the bond regions of functional wires 101 of chip body 1025, functional wires 101 being used to form electrical connections to perform the function of the integrated power module design.
In order to meet the requirement of current carrying capability when bonding the functional leads 101, a plurality of functional lead bonding points 1027 are arranged on the second metal layer 1023 in an array, that is, a plurality of functional leads 101 are bonded side by side to increase the total cross-sectional area. If the minimum bonding pitch that can be achieved by the bonding apparatus during the manufacturing process is L0, in order to avoid the influence on the functional wire bonding region B when the heat dissipation wire 202 is bonded, the minimum distance L1 between the functional wire bonding point 1027 in the functional wire bonding region B and the boundary of the functional wire bonding region B is preferably 3-5 times the minimum bonding pitch L0 that can be achieved by the bonding apparatus, so as to avoid the bonding quality problem caused by too narrow distance L1 on the one hand, and avoid too large heat dissipation area occupied by too wide distance L1 on the other hand, so that the heat dissipation wire bonding region a is too small to affect the heat dissipation effect.
The minimum distance L2 between the heat spreader wire bond point 1026 in heat spreader wire bond region a and the boundary of functional wire bond region B when heat spreader wire 202 is bonded is also 3-5 times the minimum bond pitch L0 that can be achieved by the bonding apparatus.
In this embodiment, functional wire bond B and heat dissipating wire bond a are formed by depositing an insulating layer, depositing a metal layer, and etching after the fabrication of the die of chip body 1025. Since the heat dissipation wire bonding area a is bonded with a large number of heat dissipation wires 202, in order to ensure the reliability of the device, the thickness of the first metal layer 1021 is about three times that of the second metal layer 1023, and the thickness of the first insulating layer 1022 is about two times that of the second insulating layer 1024.
Further, a plurality of heat sink wire bonds 1026 are arranged in an array on first metal layer 1021, and a plurality of functional wire bonds 1027 are arranged in an array on second metal layer 1023.
The material of the heat dissipation lead 202 is preferably copper, and is preferably bonded with the heat dissipation plate 201 and the power chip 102 by adopting a ball bonding manner, so as to complete the connection between the power chip 102 and the heat dissipation plate 201. Preferably, the ratio of the spacing L3 between adjacent heat dissipating wire bonds 1026 to the longest side L4 of the heat dissipating wire bonds 1026 is 1.5-2.5, but is greater than the minimum bonding spacing L0 that can be achieved by the bonding apparatus, so as to avoid the problem that the number of heat dissipating wires is small due to the excessively large wire spacing, and to avoid the problem that the wire spacing is too narrow to reduce the heat dissipation efficiency, and to avoid the consideration of various coupling parameters between wires, thereby achieving high wire density. One end of the heat dissipation lead 202 is soldered to the heat dissipation lead bonding area a of the power chip 102, and is a first bonding point, and the other end is soldered to the heat dissipation plate 201, and is a second bonding point. Further, after the silicone packaging structure 3 is poured and cured, the heat dissipation lead 201 outside the silicone packaging structure 3 and the bonding point of the heat dissipation lead 202 on the heat dissipation plate 201 are covered and cured by using the conductive adhesive, so that the exposed heat dissipation lead 202 and the bonding point are prevented from being oxidized and corroded.
Further, the functional leads 101 are used for electrically connecting the power chip 102, one end of each functional lead is soldered to the functional lead bonding area B of the power chip 102, the other end of each functional lead is soldered to another chip or the direct copper clad laminate 103, the functional leads 101 are usually made of metal materials, the selection of specific material parameters and soldering parameters is related to the current transmission capability of the integrated power module, the current capacity of the functional leads is usually increased by connecting a plurality of functional leads in parallel, and the number of the functional leads is related to the current capacity required by the integrated power module.
Further, the heat dissipation plate 201 is used for carrying one end of the heat dissipation lead 202 to mechanically support the heat dissipation lead 202, and for dissipating heat conducted by the heat dissipation lead 202. Preferably, the plurality of heat dissipation plates 201 are all located above the silicone encapsulation structure 3, and are not in contact with the upper surface of the silicone encapsulation structure 3. In addition, the distance L5 between adjacent heat dissipation plates 201 is 1.5-2.5 times the distance L3 between adjacent heat dissipation wire bonding points 1026, so that on one hand, enough space is reserved for bonding heat dissipation wires, and on the other hand, the area occupied by the heat dissipation plates is reduced as much as possible, and a larger heat dissipation wire bonding density is achieved. Further, a reverse biased diode 203 is disposed between the heat sink 201 and the ground GND to form a charge leakage loop to prevent static electricity from breaking down the first insulating layer 1022 of the heat sink wire bonding region a.
With continued reference to fig. 1, a substrate 104 and a heat dissipation layer 105 are sequentially disposed on the lower surface of the copper-clad plate 103. The substrate 104 can support the power chip 102 and the copper-clad plate 103, and the bottom of the substrate 104 is connected with the heat dissipation layer 105 to complete a part of heat exchange between the inside and the outside of the integrated power module. A layer of heat-conducting silica gel (not shown in the drawing) is further coated between the substrate 104 and the heat dissipation layer 105, so as to realize seamless connection between the substrate 104 and the heat dissipation layer 105, reduce thermal resistance caused by air seams, and improve the heat dissipation capability of the module. In addition, the heat dissipation layer 105 is preferably a copper material.
In addition, the integrated power module of the present embodiment further includes a housing 4, wherein the power module main body 1, the enhanced heat dissipation structure 2 and the silicone encapsulation structure 3 are disposed in the housing 4, and the housing 4 is used for protecting the materials and structures of the integrated power module. Preferably, the heat dissipation plate 201 may extend to the outer surface of the case 4 to improve its heat dissipation capability.
In this embodiment, as shown in fig. 1, the lower surface of the silicone package 3 is higher than the maximum radian of the functional leads 101, so as to completely cover the functional leads 101 inside the silicone package 3, and at the same time, the upper surface of the silicone package 3 is lower than the lower surface of the heat dissipation plate 201, so as to avoid the contact with the heat dissipation plate 201 to reduce the heat dissipation capability of the heat dissipation plate 201. In design, the maximum radian of the functional lead 101 and the distance between the lower surfaces of the heat dissipation plates 201 are related to the shrinkage rate of the packaging silicone material. Specifically, referring to fig. 5, fig. 5 is a schematic structural diagram showing a positional relationship among the heat sink, the power chip, and the functional leads. Preferably, the vertical distance between the lower surface of the heat dissipation plate 201 and the direct copper-clad plate 103 is x1 ═ 1+ s (1+ Δ) × 2, where x2 is the vertical distance between the vertex of the highest radian of the functional lead 101 and the direct copper-clad plate 103, s is the material shrinkage rate of the silica gel packaging structure 3, and Δ is 10% to 20%, which is because, on the one hand, the heat generated by the power chip cannot be effectively transferred to the heat dissipation plate through the heat dissipation lead, and on the other hand, the heat dissipation efficiency of the heat dissipation plate is reduced by wrapping the heat dissipation plate with silica gel in the engineering implementation process.
Further, each heat dissipation plate 201 is connected to the power chip 102 by at least one heat dissipation lead 202. However, each heat dissipation plate 201 may also be connected to the power chip 102 through a plurality of heat dissipation leads 202, as shown in fig. 5, in an embodiment of the present invention, the heat dissipation plate 201 may also be connected to the power chip 102 through a plurality of heat dissipation leads 202, so as to obtain a better heat dissipation effect.
In summary, the integrated power module with the enhanced heat dissipation structure according to the embodiment of the invention connects the power module main body to the heat dissipation plate located outside the silica gel encapsulation structure through the heat dissipation lead, so that the heat dissipation capability of the integrated power module can be significantly enhanced. The power chip provided by the embodiment of the invention is divided into the heat dissipation lead bonding area positioned on the first metal layer and the functional lead bonding area positioned on the second metal layer, so that the reliability reduction of the power chip caused by the simultaneous bonding of the functional lead and the heat dissipation lead on the same metal layer is avoided. The integrated power module has the advantages of simple structure, easiness in batch processing, convenience in use and the like, and the engineering application feasibility is better.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An integrated power module with a reinforced heat dissipation structure is characterized by comprising a power module main body (1), a reinforced heat dissipation structure (2) and a silica gel packaging structure (3), wherein,
the power module main body (1) is packaged in the silica gel packaging structure (3);
the enhanced heat dissipation structure (2) comprises a plurality of heat dissipation plates (201) and a plurality of heat dissipation leads (202), and the heat dissipation plates (201) are arranged outside the silica gel packaging structure (3) in parallel;
the middle part of each heat dissipation lead (202) penetrates through the silica gel packaging structure (3), one end of each heat dissipation lead (202) is bonded to one heat dissipation plate (201), and the other end of each heat dissipation lead is bonded to the power module main body (1) and used for guiding heat generated on the power module main body (1) to the heat dissipation plates (201).
2. The integrated power module with enhanced heat dissipation structure according to claim 1, wherein the power module body (1) comprises functional leads (101), a power chip (102), and a direct copper clad laminate (103) disposed on a lower surface of the power chip (102), wherein,
the power chip (102) comprises a first metal layer (1021), a first insulating layer (1022), a second metal layer (1023), a second insulating layer (1024) and a chip body (1025) from top to bottom in sequence;
a plurality of heat dissipation lead bonding points (1026) are arranged on the first metal layer (1021), one end of the heat dissipation lead (202) is bonded to the heat dissipation plate (201), and the other end of the heat dissipation lead (202) is bonded to the heat dissipation lead bonding points (1026);
the upper surface of the second metal layer (1023) which is not covered by the first metal layer (1021) and the first insulating layer (1022) is provided with a plurality of functional lead bonding points (1027), one end of the functional lead (101) is bonded to the functional lead bonding points (1027), and the other end of the functional lead is bonded to the direct copper clad laminate (103) or other power chips.
3. The integrated power module with the structure for enhancing heat dissipation of claim 2, wherein the thickness of the first metal layer (1021) is three times the thickness of the second metal layer (1023), and the thickness of the first insulating layer (1022) is two times the thickness of the second insulating layer (1024).
4. The integrated power module with enhanced heat dissipation structure of claim 2, wherein the plurality of arrays of heat dissipating wire bonds (1026) are arranged on the first metal layer (1021) and the plurality of arrays of functional wire bonds (1027) are arranged on the second metal layer (1023).
5. The integrated power module with enhanced heat dissipation structure of claim 2, wherein the ratio of the spacing of adjacent heat dissipating wirebonds (1026) to the length of the heat dissipating wirebond (1026) itself is 1.5-2.5.
6. The integrated power module with enhanced heat dissipation structure of claim 2, wherein the plurality of heat dissipation plates (201) are all spaced apart from the silicone encapsulation structure (3), and the spacing between adjacent heat dissipation plates (201) is 1.5-2.5 times the spacing between adjacent heat dissipation lead bonding points (1026).
7. The integrated power module with the enhanced heat dissipation structure as claimed in claim 2, wherein a vertical distance between the lower surface of the heat dissipation plate (201) and the copper-clad direct plate (103) is x1 ═ 1+ s (1+ Δ) × 2, where x2 is a vertical distance between a vertex of a maximum radian of the functional lead (101) and the copper-clad direct plate (103), s is a material shrinkage rate of the silicone encapsulation structure (3), and Δ is 10% to 20%.
8. The integrated power module with enhanced heat dissipation structure according to claim 1, wherein the section of the heat dissipation leads (202) outside the silicone encapsulation structure (3) is covered with conductive glue and cured.
9. The integrated power module with the enhanced heat dissipation structure according to claim 1, wherein a reverse bias diode (203) is disposed between the heat dissipation plate (201) and a ground terminal (GND).
10. The integrated power module with enhanced heat dissipation structure according to any one of claims 1 to 9, wherein each of the heat dissipation plates (201) is connected to the power module body (1) by at least one of the heat dissipation leads (202).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110575602.XA CN113506779A (en) | 2021-05-26 | 2021-05-26 | Integrated power module with enhanced heat dissipation structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110575602.XA CN113506779A (en) | 2021-05-26 | 2021-05-26 | Integrated power module with enhanced heat dissipation structure |
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| CN113506779A true CN113506779A (en) | 2021-10-15 |
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