CN113488593A - Thin film photovoltaic structure - Google Patents
Thin film photovoltaic structure Download PDFInfo
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- CN113488593A CN113488593A CN202110609487.3A CN202110609487A CN113488593A CN 113488593 A CN113488593 A CN 113488593A CN 202110609487 A CN202110609487 A CN 202110609487A CN 113488593 A CN113488593 A CN 113488593A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a thin film photovoltaic structure, which comprises a substrate, a first conducting layer, a photovoltaic layer, a second conducting layer and a plurality of first insulating regions. The first conductive layer is disposed on the substrate and has a plurality of first etching regions to divide the first conductive layer into a plurality of first conductive regions. The photovoltaic layer is arranged on the first conducting layer and provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas. The second conductive layer is disposed on the photovoltaic layer and has a plurality of second etching regions to divide the second conductive layer into a plurality of second conductive regions. The plurality of first insulation regions are respectively arranged below the plurality of second etching regions and on the upper surface of the photovoltaic region, and the width of a first insulation region of each first insulation region is larger than that of a second etching region of each second etching region.
Description
Technical Field
The present invention relates to a photovoltaic structure, and more particularly, to a thin film photovoltaic structure.
Background
In the existing green technology, solar cells (i.e., photovoltaic cells) have been widely used. Solar cells can be classified into inorganic solar cells and organic solar cells, and the highest market share in the market is still the traditional inorganic solar cells such as Si, CdTe, CIGS, and the like. Although the service life and the cell efficiency of the organic solar cell are not comparable to those of the inorganic solar cell, the organic solar cell still has higher design freedom and adaptability, for example: unique color, shape and transparency selection, etc., so that the curtain wall can be integrated into a building when in use and is combined with a building curtain wall to be designed more creative and variable.
However, in order to manufacture a large-area organic solar cell module, the upper and lower conductive layers must be etched to form single independent cells, and then the single cells are connected in series or a plurality of cells are connected in parallel to meet the specification of the application. In practice, these processes for etching the upper and lower conductive layers often cause leakage between the upper and lower electrodes due to the difficulty in matching the etching equipment and the processing conditions.
On the other hand, even if the upper conductive layer is not etched, the pattern of the upper conductive layer is defined by using a vapor deposition mask or a screen printing method, the probability of module failure will inevitably occur in the manufacturing process.
In view of the above, it is an urgent need in the art to provide a thin film photovoltaic structure that can protect the region where the leakage or short circuit is likely to occur.
Disclosure of Invention
An objective of the present invention is to provide a thin film photovoltaic structure, which can cover an insulating material on a first etching region and a second etching region to form an insulating region, so that the structure with the insulating region can not only be used to block the leakage and short circuit opportunities that may be caused by the contact between a first conductive layer and a second conductive layer during etching, but also avoid the damage to the first conductive layer due to the over-etching effect when the second etching region is formed by an etching process. Therefore, the insulating material is used for covering the first etching area and the second etching area, so that the short circuit possibility possibly generated by the contact between the first conducting layer and the second conducting layer can be prevented, the photoelectric conversion efficiency of the photovoltaic cell is effectively improved, and the production yield of the large-area modularized thin-film photovoltaic cell is greatly improved.
To achieve the above object, the thin film photovoltaic structure of the present invention comprises: a substrate; the first conducting layer is arranged on the substrate and is provided with a plurality of first etching areas so as to divide the first conducting layer into a plurality of first conducting areas; the photovoltaic layer is arranged on the first conducting layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conducting layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conducting layer into a plurality of second conducting areas; and a plurality of first insulating regions respectively arranged below the plurality of second etching regions and on the upper surfaces of the photovoltaic regions, wherein the width of a first insulating region of each first insulating region is greater than that of a second etching region of each second etching region.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, each of the second insulating regions is filled in each of the first etching regions and covers an upper peripheral edge of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, and each of the second insulating regions partially fills each of the first etching regions and covers an upper periphery of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, each of the first etching regions further extends upward through each of the photovoltaic regions, and each of the second insulating regions is filled in each of the first etching regions and covers an upper peripheral edge of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, each second etching region is partially overlapped with each photovoltaic etching region, and each first insulating region is partially filled in each photovoltaic etching region.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, each of the second insulating regions is filled in each of the first etching regions and covers an upper peripheral edge of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, and each of the second insulating regions partially fills each of the first etching regions and covers an upper periphery of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further includes a plurality of second insulating regions, each of the first etching regions further extends upward through each of the photovoltaic regions, and each of the second insulating regions is filled in each of the first etching regions and covers an upper peripheral edge of each of the first etching regions.
In the thin film photovoltaic structure of the present invention, the second etching region has a second etching region width of 20 to 500 micrometers, and the first insulating region has a first insulating region width of 25 to 1000 micrometers.
In the thin film photovoltaic structure of the invention, each first conductive region and the corresponding photovoltaic region and the second conductive region thereof form a primary photovoltaic structure; the second conductive region of one sub-photovoltaic structure is arranged on the upper surface of the first conductive region of another adjacent sub-photovoltaic structure and electrically connected, so that the two adjacent sub-photovoltaic structures are connected in series.
To achieve the above object, the present invention further provides a thin film photovoltaic structure comprising: a substrate; a first conductive layer disposed on the substrate and having a plurality of first etching regions to divide the first conductive layer into a plurality of first conductive regions; the photovoltaic layer is arranged on the first conducting layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conducting layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conducting layer into a plurality of second conducting areas; and a plurality of second insulating regions, each second insulating region is filled in each first etching region and continuously covers and contacts the upper surface of each corresponding first conducting region, and the upper part of each second insulating region is covered by the corresponding photovoltaic region.
To achieve the above object, the present invention further provides a thin film photovoltaic structure comprising: a substrate; a first conductive layer disposed on the substrate and having a plurality of first etching regions to divide the first conductive layer into a plurality of first conductive regions; the photovoltaic layer is arranged on the first conducting layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conducting layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conducting layer into a plurality of second conducting areas; and a plurality of second insulating regions, wherein each first etching region further penetrates each photovoltaic region upwards, each second insulating region is filled in each first etching region and partially continuously covers and contacts the upper surface of each photovoltaic region, and the upper part of each second insulating region is covered by the corresponding second conducting region.
Drawings
Fig. 1 is a schematic view of a first embodiment of a thin film photovoltaic structure of the present invention.
Figure 2 is a schematic view of a second embodiment of a thin film photovoltaic structure of the present invention.
Figure 3 is a schematic view of a third embodiment of a thin film photovoltaic structure of the present invention.
Figure 4 is a schematic view of a fourth embodiment of a thin film photovoltaic structure of the present invention.
Fig. 5 is a schematic view of a fifth embodiment of a thin film photovoltaic structure of the present invention.
Figure 6 is a schematic view of a sixth embodiment of a thin film photovoltaic structure of the present invention.
Figure 7 is a schematic view of a seventh embodiment of the thin film photovoltaic structure of the present invention.
Figure 8 is a schematic view of an eighth embodiment of a thin film photovoltaic structure of the present invention.
Description of the figure numbers:
1: thin film photovoltaic structure
11: substrate
12: first conductive layer
121: first etching region
121 a: upper peripheral edge
121 b: side edge
122: first conductive area
13: photovoltaic layer
131: photovoltaic etched region
132: photovoltaic region
14: second conductive layer
141: second etching region
142: second conductive area
15: a first insulating region
16: second insulating region
16': left second insulating region
16": right second insulating region
W1: width of the first insulation region
W2: the second etch region width.
Detailed Description
The invention relates to a thin film photovoltaic structure, which can isolate a leakage path between a first conducting layer and a second conducting layer through the arrangement of an insulating region, and simultaneously reduce the probability of mutual short circuit so as to further improve the photovoltaic conversion efficiency.
Please refer to fig. 1, which shows a thin film photovoltaic structure 1 according to a first embodiment of the present invention. The thin film photovoltaic structure 1 includes a substrate 11, a first conductive layer 12, a photovoltaic layer 13, a second conductive layer 14 and a plurality of first insulating regions 15.
The first conductive layer 12 is disposed on the substrate 11, and the first conductive layer 12 has a plurality of first etching regions 121 to divide the first conductive layer 12 into a plurality of first conductive regions 122, and the first etching regions 121 are between two adjacent first conductive regions 122. The photovoltaic layer 13 is disposed on the first conductive layer 12, and the photovoltaic layer 13 has a plurality of photovoltaic etching regions 131 to divide the photovoltaic layer 13 into a plurality of photovoltaic regions 132, the photovoltaic etching regions 131 are between two adjacent photovoltaic regions 132, and a portion of the photovoltaic regions 132 are filled in the first etching region 121 and contact the substrate 11. The second conductive layer 14 is disposed on the photovoltaic layer 13, and the second conductive layer 14 has a plurality of second etching regions 141 to divide the second conductive layer 14 into a plurality of second conductive regions 142, wherein the second etching regions 141 are between two adjacent second conductive regions 142. Each of the first conductive regions 122 and the corresponding photovoltaic region 132 and the second conductive region 142 form a sub-photovoltaic structure, so that the thin film photovoltaic structure 1 actually includes a plurality of sub-photovoltaic structures. Adjacent sub-photovoltaic structures are connected in series to increase the voltage, for example, in fig. 1, there are three sub-photovoltaic structures on the left, middle and right sides, the second conductive region 142 of the left sub-photovoltaic structure is disposed on the upper surface of the photovoltaic region 132 and the photovoltaic etching region 131, and is also disposed on the upper surface of the first conductive region 122 of the sub-photovoltaic structure (the middle sub-photovoltaic structure) adjacent to the left sub-photovoltaic structure to electrically connect, so that the left sub-photovoltaic structure is connected in series with the middle sub-photovoltaic structure, and similarly the middle sub-photovoltaic structure is connected in series with the right sub-photovoltaic structure, and so on, the thin-film photovoltaic structure 1 can increase the overall voltage. The plurality of first insulating regions 15 are disposed below the plurality of second etching regions 141 and on the upper surface of the photovoltaic region 132 of the photovoltaic layer 13, and a first insulating region width W1 of each first insulating region 15 is greater than a second etching region width W2 of each second etching region 141.
The thickness of the substrate 11 is between 20 micrometers and 3000 micrometers, and the material of the substrate 11 may be one of transparent plastic and glass. The layer thickness of the first conductive layer 12 is between 20 nm and 10 μm, and the width of the first etching region 121 is between 10 and 500 μm.
The photovoltaic layer 13 may be a conventional structure including at least one electron transport layer, at least one hole transport layer, and at least one light absorbing layer (not shown) between the at least one electron transport layer and the at least one hole transport layer. The thickness of the photovoltaic layer 13 is between 50 nm and 2 μm, and the photovoltaic layer 13 can be formed by one of coating, spraying, printing, sputtering, evaporation, soaking, and the like. The width of the photo-voltaic etching area 131 is between 20 micrometers and 2 millimeters.
The second conductive layer 14 has a thickness of 10 nm to 2000 nm, and may be made of gold, silver, copper, aluminum, or an alloy thereof, or a transparent conductive metal oxide, and at least one of indium-tin oxide (ito), indium-zinc oxide (izo), indium-gallium-zinc oxide (izo), and aluminum-doped zinc oxide (izo) may be used as the second conductive layer 14.
Second etched area 141 has a second etched area width W2 of between 20 microns and 500 microns. The second etching region width W2 must be smaller than the first insulating region width W1 of the underlying first insulating region 15, and the first insulating region width W1 is between 25 micrometers and 1000 micrometers.
In detail, in the present invention, since the plurality of first insulating regions 15 are required to be disposed below the plurality of second etching regions 141, the forming step is to form the plurality of first insulating regions 15 on the plurality of photovoltaic regions 132 by, for example, screen printing, then form the second conductive layer 14 on the photovoltaic layer 13, and then etch the positions corresponding to the first insulating regions 15 to form the plurality of second etching regions 141.
As shown in fig. 1, since the first insulating region width W1 of each first insulating region 15 is greater than the second etching region width W2 of each second etching region 141, when the plurality of second etching regions 141 are formed by wet etching, laser etching, or mechanical scraping, the etching depth of the second etching regions 141 is stopped by contacting the first insulating regions 15. In other words, the provision of the plurality of first insulating regions 15 can prevent overetching of the photovoltaic layer 13 under the second conductive layer 14 during the formation of the plurality of second etching regions 141, thereby ensuring that the thin film photovoltaic cell does not generate electrical leakage or short circuit.
Please refer to the second embodiment shown in fig. 2, which is the same as the first embodiment and will not be described again, and the difference between the first embodiment and the second embodiment is that the photovoltaic region 132 is not filled in the first etching region 121 and is not in contact with the substrate 11. In addition, the thin film photovoltaic structure 1 according to the second embodiment of the present invention further includes a plurality of second insulating regions 16, and each of the second insulating regions 16 is filled in each of the first etching regions 121 by, for example, screen printing and covers an upper peripheral edge 121a of each of the first etching regions 121. In other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 fills each first etching region 121 and continuously covers and contacts the upper surface of the corresponding first conductive region 122. Further, the second insulating region 16 is filled in the first etching region 121 and partially continuously covers and contacts the upper surface of the first conductive region 122 of the adjacent two sub-photovoltaic structures, for example, the second insulating region 16 located on the left side in fig. 2 is filled in the first etching region 121 and partially continuously covers and contacts the first conductive region 122 of the left sub-photovoltaic structure and the first conductive region 122 of the middle sub-photovoltaic structure adjacent to each other. In addition, the photovoltaic region 132 covers the corresponding second insulating region 16.
In this way, after the first conductive layer 12 is etched to form the plurality of first etching regions 121, the metal particles generated during the etching process at the upper periphery 121a of the first etching regions 121 are covered by the second insulating region 16, thereby avoiding a short circuit condition caused by the conductive connection between the second conductive regions 142 and the other first conductive regions 122 through the metal particles after the second conductive regions 142 are formed in the photovoltaic etching region 131.
In the third embodiment shown in fig. 3, the thin-film photovoltaic structure 1 may further include a plurality of second insulating regions 16, and the difference from the second embodiment is that each second insulating region 16 of the third embodiment is only partially filled in each first etching region 121 and covers the upper periphery 121a of each first etching region 121 by being disposed along the sidewall, and the photovoltaic region 132 is filled in part of the first etching region 121 and contacts the substrate 11. The second insulating region 16 is also disposed in such a way that the second insulating region 16 covers the metal particles on the upper periphery 121a of the first etching region 121, thereby avoiding a short circuit condition caused by the subsequent formation of the second conductive region 142 in the photovoltaic etching region 131 and the conduction with other first conductive regions 122 through the metal particles. In other words, each of the second insulating regions 16 includes a left second insulating region 16 ' and a right second insulating region 16 ", the left second insulating region 16 ' and the right second insulating region 16" are disposed at intervals on the sidewalls of two adjacent first conductive regions 122 and respectively continuously cover and contact the upper surfaces of the two corresponding adjacent first conductive regions 122, and the photovoltaic region 132 is filled between the left second insulating region 16 ' and the right second insulating region 16 "and is in contact with the substrate 11. The maximum distance between the ends of the left second insulating region 16 'and the ends of the right second insulating region 16 "is greater than the width of each first etching region 121, and the ends of the left second insulating region 16' and the right second insulating region 16" only fill a portion of each first etching region 121 and continuously cover and contact the upper surface of the corresponding first conductive region 122.
In the fourth embodiment shown in fig. 4, the thin-film photovoltaic structure 1 also further includes a plurality of second insulating regions 16, and the difference from the second embodiment is that each first etching region 121 of the fourth embodiment further extends upward through each photovoltaic region 132 (i.e., the first etching region 121 is formed by etching the photovoltaic layer 13 and the first conductive layer 12 at the same time after the photovoltaic layer 13 is disposed on the first conductive layer 12), and each second insulating region 16 is filled in each first etching region 121 and covers the upper peripheral edge 121a and the side edge 121b of each first etching region 121, in other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 is filled in each first etching region 121 and partially covers and contacts the upper surface of each photovoltaic region 132. In addition, the top of each second insulating region 16 is covered by the corresponding second conductive region 142.
Since the first etching region 121 of the fourth embodiment is formed by etching the photovoltaic layer 13 and the first conductive layer 12 at the same time after the photovoltaic layer 13 is disposed on the first conductive layer 12, the second insulating region 16 is filled in the first etching region 121, so as to prevent a short circuit condition caused by conduction between the subsequently disposed second conductive region 142 and other first conductive regions 122.
In the fifth embodiment shown in fig. 5, each of the second etching regions 141 partially overlaps each of the photovoltaic etching regions 131, so that each of the first insulating regions 15 can be partially filled in each of the photovoltaic etching regions 131 and in contact with the first conductive region 122 except that each of the first insulating regions 15 has a first insulating region width W1 greater than a second etching region width W2 of each of the second etching regions 141, thereby increasing the adhesion of the first insulating regions 15. In other words, the width of the photovoltaic etching region 131 is greater than the first insulating region width W1.
In detail, after the plurality of photovoltaic etching regions 131 are formed by etching the photovoltaic layer 13, the first insulating regions 15 are partially filled in one side periphery of each photovoltaic etching region 131, and then the second conductive layer 14 is disposed on the photovoltaic layer 13, and then the second etching region 141 is formed by etching the region corresponding to the first insulating regions 15. This arrangement also prevents over-etching of the photovoltaic layer 13 under the second conductive layer 14 during the formation of the plurality of second etching regions 141, thereby ensuring that the thin film photovoltaic cell does not generate electrical leakage or short circuit.
The sixth embodiment shown in fig. 6 is a variation of the fifth embodiment based on fig. 5. In the sixth embodiment, in addition to the structure of the fifth embodiment, the thin film photovoltaic structure 1 further includes a plurality of second insulating regions 16, and each second insulating region 16 is filled in each first etching region 121 and covers the upper periphery 121a of each first etching region 121. After the first conductive layer 12 is etched to form a plurality of first etching regions 121, metal particles generated during the etching process at the upper periphery 121a of the first etching regions 121 are covered by the second insulating region 16, so as to avoid a short circuit condition caused by the following formation of the second conductive regions 142 in the photovoltaic etching region 131 and conduction with other first conductive regions 122 through the metal particles. In other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 fills each first etching region 121 and continuously covers and contacts the upper surface of each first conductive region 122. Further, the second insulating region 16 is filled in the first etching region 121 and partially continuously covers and contacts the upper surfaces of two adjacent first conductive regions 122, for example, the second insulating region 16 on the left side in fig. 6 is filled in the first etching region 121 and partially continuously covers and contacts the first conductive region 122 on the left side in the figure and the first conductive region 122 in the middle in the figure which are adjacent to each other.
The seventh embodiment shown in fig. 7 is also a variation of the fifth embodiment based on fig. 5. In the seventh embodiment, in addition to the structure of the fifth embodiment, the thin film photovoltaic structure 1 further includes a plurality of second insulating regions 16, and each second insulating region 16 partially fills each first etching region 121 and covers the upper periphery 121a of each first etching region 121. Each second insulating region 16 of the seventh embodiment is only partially filled in each first etching region 121 and covers the upper peripheral edge 121a of each first etching region 121 by being disposed along the sidewall, so that the manner of disposing the second insulating region 16 can also make the second insulating region 16 cover the metal particles on the upper peripheral edge 121a of the first etching region 121, thereby avoiding a short circuit condition caused by the fact that the subsequent second conductive region 142 is formed in the photovoltaic etching region 131 and is possibly conducted with other first conductive regions 122 through the metal particles. In other words, each of the second insulating regions 16 includes a left second insulating region 16 ' and a right second insulating region 16 ", the left second insulating region 16 ' and the right second insulating region 16" are disposed at intervals on the sidewalls of two adjacent first conductive regions 122 and respectively continuously cover and contact the upper surfaces of the two corresponding adjacent first conductive regions 122, and the photovoltaic region 132 is filled between the left second insulating region 16 ' and the right second insulating region 16 "and is in contact with the substrate 11. The maximum distance between the ends of the left second insulating region 16 'and the ends of the right second insulating region 16 "is greater than the width of each first etching region 121, and the ends of the left second insulating region 16' and the right second insulating region 16" only fill a portion of each first etching region 121 and continuously cover and contact the upper surface of the corresponding first conductive region 122.
The eighth embodiment shown in fig. 8 is also a variation of the fifth embodiment based on fig. 5. In the eighth embodiment, in addition to the structure of the fifth embodiment, the thin film photovoltaic structure 1 further includes a plurality of second insulating regions 16, each first etching region 121 further extends upward through each photovoltaic region 132 (i.e., the first etching region 121 is formed by etching the photovoltaic layer 13 and the first conductive layer 12 after the photovoltaic layer 13 is disposed on the first conductive layer 12), and each second insulating region 16 fills each first etching region 121 and covers the upper periphery 121a and the side edge 121b of each first etching region 121. In other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 fills each first etching region 121 and partially covers and contacts the upper surface of each photovoltaic region 132. Since the first etching region 121 of the eighth embodiment is formed by etching the photovoltaic layer 13 and the first conductive layer 12 at the same time after the photovoltaic layer 13 is disposed on the first conductive layer 12, the second insulating region 16 is filled in the first etching region 121, so as to prevent a short circuit condition caused by conduction between the subsequently disposed second conductive region 142 and other first conductive regions 122.
The first insulating region 15 and the second insulating region 16 are prepared by one of printing, coating or spraying, and the material used for the first insulating region 15 and the second insulating region 16 is selected from one of UV glue, epoxy resin, photosensitive polyimide type resin, silicon oxide, silicon dioxide, silicon nitride, and the like.
In summary, since the thin film photovoltaic structure 1 of the present invention can cover the first etching region 121 and the second etching region 141 with the insulating material to form the second insulating region 16 and the first insulating region 15, respectively, the structure having the insulating regions of the second insulating region 16 and the first insulating region 15 can not only be used to prevent the first conductive region 122 and the second conductive region 142 from being electrically leaked and shorted during etching, which may result in contact with other conductive regions, but also can prevent the photovoltaic layer 13 and the first conductive layer 12 from being damaged due to over-etching effect when the second etching region 141 is formed by the etching process. Therefore, covering the first etching region 121 and the second etching region 141 with an insulating material can prevent the first conductive layer 12 and the second conductive layer 14 from short-circuiting due to contact with other conductive layers, thereby effectively improving the photoelectric conversion efficiency of the photovoltaic cell and greatly improving the production yield of large-area modular thin-film photovoltaic cells.
Claims (12)
1. A thin film photovoltaic structure, comprising:
a substrate (11);
a first conductive layer (12) disposed on the substrate (11), the first conductive layer (12) having a plurality of first etching regions (121) to divide the first conductive layer (12) into a plurality of first conductive regions (122);
a photovoltaic layer (13) disposed on the first conductive layer (12), wherein the photovoltaic layer (13) has a plurality of photovoltaic etching regions (131) for dividing the photovoltaic layer (13) into a plurality of photovoltaic regions (132);
a second conductive layer (14) disposed on the photovoltaic layer (13), the second conductive layer (14) having a plurality of second etching regions (141) to divide the second conductive layer (14) into a plurality of second conductive regions (142); and
a plurality of first insulating regions (15) respectively disposed below the second etching regions (141) and on the upper surfaces of the photovoltaic regions (132), wherein a first insulating region width (W1) of each first insulating region (15) is greater than a second etching region width (W2) of each second etching region (141).
2. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), each of the second insulating regions (16) filling each of the first etching regions (121) and covering an upper peripheral edge (121a) of each of the first etching regions (121).
3. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), wherein each of the second insulating regions (16) partially fills each of the first etching regions (121) and covers an upper periphery (121a) of each of the first etching regions (121).
4. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), wherein each of the first etching regions (121) further extends upward through each of the photovoltaic regions (132), and each of the second insulating regions (16) fills each of the first etching regions (121) and covers an upper peripheral edge (121a) of each of the first etching regions (121).
5. The thin film photovoltaic structure of claim 1, wherein each of the second etching regions (141) partially overlaps each of the photovoltaic etching regions (131), and each of the first insulating regions (15) partially fills each of the photovoltaic etching regions (131).
6. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), wherein each of the second insulating regions (16) fills each of the first etching regions (121) and covers an upper peripheral edge (121a) of each of the first etching regions (121).
7. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), wherein each of the second insulating regions (16) partially fills each of the first etching regions (121) and covers an upper periphery (121a) of each of the first etching regions (121).
8. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), wherein each of the first etching regions (121) further extends upward through each of the photovoltaic regions (132), and each of the second insulating regions (16) fills each of the first etching regions (121) and covers an upper peripheral edge (121a) of each of the first etching regions (121).
9. The thin film photovoltaic structure of claim 1, wherein the second etched region (141) has a second etched region width (W2) of between 20 microns and 500 microns, and the first insulating region (15) has a first insulating region width (W1) of between 25 microns and 1000 microns.
10. The thin film photovoltaic structure of claim 1, wherein each of the first conductive regions (122) and its corresponding photovoltaic region (132) and second conductive region (142) form a sub-photovoltaic structure; the second conductive region (142) of one sub-photovoltaic structure is disposed on the upper surface of the first conductive region (122) of another adjacent sub-photovoltaic structure and electrically connected to each other, so that the two adjacent sub-photovoltaic structures are connected in series.
11. A thin film photovoltaic structure, comprising:
a substrate (11);
a first conductive layer (12) disposed on the substrate (11), the first conductive layer (12) having a plurality of first etching regions (121) to divide the first conductive layer (12) into a plurality of first conductive regions (122);
a photovoltaic layer (13) disposed on the first conductive layer (12), wherein the photovoltaic layer (13) has a plurality of photovoltaic etching regions (131) for dividing the photovoltaic layer (13) into a plurality of photovoltaic regions (132);
a second conductive layer (14) disposed on the photovoltaic layer (13), the second conductive layer (14) having a plurality of second etching regions (141) to divide the second conductive layer (14) into a plurality of second conductive regions (142); and
a plurality of second insulating regions (16), each second insulating region (16) is filled in each first etching region (121) and continuously covers and contacts the upper surface of the corresponding first conductive region (122), and the upper part of each second insulating region (16) is covered by the corresponding photovoltaic region (132).
12. A thin film photovoltaic structure, comprising:
a substrate (11);
a first conductive layer (12) disposed on the substrate (11), the first conductive layer (12) having a plurality of first etching regions (121) to divide the first conductive layer (12) into a plurality of first conductive regions (122);
a photovoltaic layer (13) disposed on the first conductive layer (12), wherein the photovoltaic layer (13) has a plurality of photovoltaic etching regions (131) for dividing the photovoltaic layer (13) into a plurality of photovoltaic regions (132);
a second conductive layer (14) disposed on the photovoltaic layer (13), the second conductive layer (14) having a plurality of second etching regions (141) to divide the second conductive layer (14) into a plurality of second conductive regions (142); and
a plurality of second insulating regions (16), each first etching region (121) further extends upwards through each photovoltaic region (132), each second insulating region (16) fills each first etching region (121) and partially covers and contacts the upper surface of each photovoltaic region (132), and the upper part of each second insulating region (16) is covered by the corresponding second conducting region (142).
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| TW201123477A (en) * | 2009-12-17 | 2011-07-01 | Auria Solar Co Ltd | Thin film solar cell and fabrication method thereof |
| TW201501344A (en) * | 2013-05-22 | 2015-01-01 | Electricite De Francefr | Method for fabricating a photovoltaic system with light concentration |
| CN107210327A (en) * | 2014-12-03 | 2017-09-26 | 索里布罗研究公司 | Photovoltaic module and the method for producing it |
| CN208368524U (en) * | 2018-06-21 | 2019-01-11 | 位速科技股份有限公司 | photovoltaic cell structure |
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| TW201123477A (en) * | 2009-12-17 | 2011-07-01 | Auria Solar Co Ltd | Thin film solar cell and fabrication method thereof |
| TW201501344A (en) * | 2013-05-22 | 2015-01-01 | Electricite De Francefr | Method for fabricating a photovoltaic system with light concentration |
| US20160093759A1 (en) * | 2013-05-22 | 2016-03-31 | Electricite De France | Method for fabricating a photovoltaic system with light concentration |
| CN107210327A (en) * | 2014-12-03 | 2017-09-26 | 索里布罗研究公司 | Photovoltaic module and the method for producing it |
| CN208368524U (en) * | 2018-06-21 | 2019-01-11 | 位速科技股份有限公司 | photovoltaic cell structure |
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