CN211150572U - Thin film solar cell - Google Patents
Thin film solar cell Download PDFInfo
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- CN211150572U CN211150572U CN201921975296.3U CN201921975296U CN211150572U CN 211150572 U CN211150572 U CN 211150572U CN 201921975296 U CN201921975296 U CN 201921975296U CN 211150572 U CN211150572 U CN 211150572U
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- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 11
- 239000011147 inorganic material Substances 0.000 abstract description 11
- 239000011368 organic material Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 174
- 239000000463 material Substances 0.000 description 18
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FWPIOHJLMYTOSC-UHFFFAOYSA-N [B]=O.[Zn] Chemical compound [B]=O.[Zn] FWPIOHJLMYTOSC-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a thin-film solar cell, it includes transparent substrate, solar cell unit, plural layer insulating layer and conducting layer. The transparent substrate includes a central region and a peripheral region surrounding the central region. The solar cell unit is arranged in the central area and comprises a front electrode layer, a photoelectric conversion layer and a back electrode layer. The front electrode layer is arranged on the transparent substrate. The photoelectric conversion layer is positioned in the central area and is arranged on the front electrode layer. The back electrode layer is arranged on the photoelectric conversion layer. The plurality of insulating layers cover the back electrode layer and expose part of the front electrode layer. The plurality of insulating layers at least comprises a first insulating layer and a second insulating layer which are sequentially laminated. The first insulating layer includes an inorganic material, and the second insulating layer includes an organic material. The conductive layer is disposed on the insulating layer and electrically connected to the front electrode layer.
Description
Technical Field
The present invention relates to a thin film solar cell, and more particularly, to a cover plate type thin film solar cell.
Background
The thin film solar cell may be classified into a superstrate type (superstrate) thin film solar cell and a substrate type (superstrate) solar cell according to an incident direction of ambient light. In the cover plate type thin film solar cell, after ambient light penetrates through the transparent substrate, the semiconductor material in the photoelectric conversion layer can be excited to generate a plurality of electron-hole pairs, wherein electrons and holes are respectively collected by the front electrode layer and the back electrode layer to generate current.
In order to guide out the holes of the front electrode layer at the interlayer of the clad plate type thin film solar cell, a conductive layer electrically connected with the front electrode layer is arranged above the back electrode layer, wherein the conductive layer is electrically insulated with the back electrode layer by an insulating layer covering the back electrode layer. However, the material included in the insulating layer affects the conversion efficiency of the thin film solar cell, and when the insulating layer includes an inorganic material, it has a relatively high dielectric constant and can have a thin thickness, and has the advantages of water and oxygen isolation and leakage current reduction, but also has a high parasitic capacitance; when the insulating layer includes an organic material, it has a relatively low dielectric constant and may have a low parasitic capacitance, but it has poor water and oxygen barrier properties and is susceptible to temperature changes to change electrical properties.
SUMMERY OF THE UTILITY MODEL
The utility model provides a thin-film solar cell, it has through the conversion efficiency who promotes.
The utility model discloses a thin-film solar cell includes transparent substrate, solar cell unit, plural layer insulating layer and conducting layer. The transparent substrate includes a central region and a peripheral region surrounding the central region. The solar cell unit is arranged in the central area and comprises a front electrode layer, a photoelectric conversion layer and a back electrode layer. The front electrode layer is arranged on the transparent substrate. The photoelectric conversion layer is positioned in the central area and is arranged on the front electrode layer. The back electrode layer is arranged on the photoelectric conversion layer. The plurality of insulating layers cover the back electrode layer and expose part of the front electrode layer. The plurality of insulating layers at least comprises a first insulating layer and a second insulating layer which are sequentially laminated. The first insulating layer includes an inorganic material, and the second insulating layer includes an organic material. The conductive layer is disposed on the insulating layer and electrically connected to the front electrode layer.
In an embodiment of the present invention, the plurality of insulating layers cover the top surface of the back electrode layer and the side surfaces of the back electrode layer and the photoelectric conversion layer.
In an embodiment of the present invention, the first insulating layer covers a top surface of the back electrode layer and side surfaces of the back electrode layer and the photoelectric conversion layer, and the second insulating layer covers the top surface of the back electrode layer.
In an embodiment of the present invention, the first insulating layer covers a top surface of the back electrode layer, and the second insulating layer covers the top surface of the back electrode layer and side surfaces of the back electrode layer and the photoelectric conversion layer.
In an embodiment of the present invention, the thickness of the first insulating layer is 0.2 to 0.6 micrometers.
In an embodiment of the invention, the thickness of the second insulating layer is 2 to 4 micrometers.
In an embodiment of the present invention, the inorganic material includes silicon nitride (SiN)x)。
In an embodiment of the invention, the material of the front electrode layer includes Aluminum Zinc Oxide (AZO), aluminum zinc oxide (ito), or a combination thereofZinc Boron (BZO) or tin oxide (SnO)2)。
In an embodiment of the invention, a material of the photoelectric conversion layer includes monocrystalline silicon, polycrystalline silicon, amorphous silicon, or a combination thereof.
In an embodiment of the invention, a material of the back electrode layer includes molybdenum tantalum (MoTa) or a combination of molybdenum tantalum and aluminum.
In an embodiment of the invention, a material of the conductive layer includes molybdenum tantalum or a combination of molybdenum tantalum and aluminum.
Based on the above, because the utility model discloses a thin-film solar cell borrows to borrow and is provided with the plural layer insulating layer including inorganic material and organic material's combination between back electrode layer and conducting layer, and can improve solar cell unit's electrical property, borrows this in order to increase thin-film solar cell's conversion efficiency.
In order to make the aforementioned and other features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic top view of a thin film solar cell according to an embodiment of the present invention;
fig. 2 is an enlarged cross-sectional schematic view of one embodiment of the thin-film solar cell unit of fig. 1.
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts. The present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The thickness of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numbers refer to the same or similar components, and the following paragraphs will not be repeated. In addition, directional terms mentioned in the embodiments, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
Fig. 1 is a schematic top view of a thin film solar cell according to an embodiment of the present invention. Fig. 2 is an enlarged cross-sectional schematic view of one embodiment of the thin-film solar cell unit of fig. 1.
Referring to fig. 1 and fig. 2, the thin film solar cell 10 of the present embodiment includes a transparent substrate 100, a solar cell 200, a plurality of insulating layers 300, and a conductive layer 400.
The thin-film solar cell 10 of the present embodiment is, for example, a clad-type thin-film solar cell in which the ambient light L is irradiated to the side of the transparent substrate 100 where the solar cell 200 is not disposed, and penetrates the transparent substrate 100 and enters the inside of the solar cell 200, and in one embodiment, the transparent substrate 100 may be made of glass, a transparent resin, or another suitable transparent material, and the transparent resin may be, for example, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyether, or polyimide, and in the present embodiment, the transparent substrate 100 may be made of glass.
From another perspective, the thin film solar cell 10 has a central region 10a and a peripheral region 10b, as shown in fig. 1. The transparent substrate 100 is disposed in the central region 10a and the peripheral region 10b, for example, globally, and the solar cell 200 is also disposed in the peripheral region 10b globally. The solar cells 200 are arranged in the central region 10a in a plurality of linear patterns, for example. It should be noted that although the thin film solar cell 10 of the present embodiment is rectangular, the present invention is not limited thereto. For example, the thin film solar cell 10 of the present embodiment may also be circular or have other geometric shapes.
The thin film solar cell 10 of the present embodiment can be applied to a display (not shown). For example, the thin-film solar cell 10 of the present embodiment may be disposed on one side of a display surface of a display panel (not shown), wherein a central region 10a of the thin-film solar cell 10 corresponds to a display region of the display panel, for example, and a peripheral region 10b of the thin-film solar cell 10 corresponds to a non-display region of the display panel, for example. Accordingly, the central region 10a of the thin-film solar cell 10 is mostly the transparent substrate 100, and thus does not obstruct the screen displayed by the display panel.
Referring to fig. 2, the solar cell 200 includes, for example, a front electrode layer 210, a photoelectric conversion layer 220 and a back electrode layer 230 sequentially stacked on a transparent substrate 100.
The front electrode layer 210 is disposed on the transparent substrate 100, for example. The front electrode layer 210 is formed by sputtering, but the present invention is not limited thereto. The material of the front electrode layer 210 is, for example, Transparent Conductive Oxide (TCO). For example, the material of the front electrode layer 210 includes Aluminum Zinc Oxide (AZO), zinc boron oxide (BZO), or tin oxide (SnO)2). In the present embodiment, the material of the front electrode layer 210 is aluminum zinc oxide.
The photoelectric conversion layer 220 is disposed on the front electrode layer 210, for example. The photoelectric conversion layer 220 is formed by a chemical vapor deposition method, but the invention is not limited thereto. In an embodiment, the material of the photoelectric conversion layer 220 may include monocrystalline silicon, polycrystalline silicon or amorphous silicon, i.e., the thin film solar cell 10 of the present embodiment may be a silicon thin film solar cell. In the present embodiment, the material of the photoelectric conversion layer 220 is amorphous silicon. The photoelectric conversion layer 220 includes, for example, a first extrinsic semiconductor layer 220a, an intrinsic semiconductor layer 220b, and a second extrinsic semiconductor layer 220c sequentially stacked, wherein the first extrinsic semiconductor layer 220a has a first doping type, and the second extrinsic semiconductor layer 220c has a second doping type. The first doping type and the second doping type are respectively one of a P type and an N type. In the present embodiment, the first doping type is P-type, and the second doping type is N-type, but the invention is not limited thereto.
The back electrode layer 230 is disposed on the photoelectric conversion layer 220, for example, and is in contact with the second extrinsic semiconductor layer 220 c. The back electrode layer 230 is formed by sputtering or chemical vapor deposition, but the present invention is not limited thereto. The material of the back electrode layer 230 is, for example, metal, alloy or metal oxide. For example, the material of the back electrode layer 230 includes molybdenum tantalum (MoTa) or a combination of molybdenum tantalum and aluminum. In the present embodiment, the material of the back electrode layer 230 is a combination of molybdenum, tantalum and aluminum.
In the present embodiment, the photoelectric conversion layer 220 and the back electrode layer 230 expose a portion of the front electrode layer 210. In detail, the photoelectric conversion layer 220 and the back electrode layer 230 are, for example, a plurality of layers and are dispersedly formed on the front electrode layer 210.
The plurality of insulating layers 300 cover the back electrode layer 230 and expose a portion of the front electrode layer 210, for example. In detail, the plurality of insulating layers 300 at least cover the top surface of the back electrode layer 230 and the side surfaces of the back electrode layer 230 and the photoelectric conversion layer 220. The plurality of insulating layers 300 are formed, for example, by performing a physical vapor deposition (pvd) process or a chemical vapor deposition (cvd) process followed by a photolithography process. For example, a plurality of insulating material layers (not shown) may be sequentially deposited on the transparent substrate 100 by physical vapor deposition or chemical vapor deposition. Then, a patterned photoresist layer (not shown) is formed on the plurality of insulating material layers. Then, the patterned photoresist layer is used as a mask to perform an etching process on the plurality of insulating material layers to form a plurality of insulating layers 300. In one embodiment, at least one of the plurality of insulating layers 300 comprises an inorganic material, and at least one of the plurality of insulating layers 300 comprises an organic material. The inorganic material may be, for example, silicon nitride (SiNx) or silicon oxide (SiO)2) Or aluminum oxide (Al)2O3) And the organic material may be Pentacene (Pentacene), diethylene glycol Dimethyl Ether (DEDM), or Polyimide (Polyimide), for example. In addition, a thickness T1 of one of the plurality of insulating layers 300 including an inorganic material is 0.2 to 0.6 micrometers, and a thickness T2 of the other of the plurality of insulating layers including an organic material is 2 to 4 micrometers. When one of the insulating layers 300 includes an inorganic material, it has the advantages of water and oxygen isolation and leakage reduction, and when the other insulating layer 300 includes an organic material, it has the advantages of low parasitic capacitance due to low dielectric constant and high flatness for subsequent processesIs carried out.
In the present embodiment, the plurality of insulating layers 300 includes a first insulating layer 310 and a second insulating layer 320 stacked in sequence. The first insulating layer 310 comprises, for example, silicon nitride and has a thickness T1 of 0.5 microns. The second insulating layer 320 includes, for example, diglyme (DEDM) or the like, and has a thickness T2 of 3 micrometers. As shown in fig. 2, the first insulating layer 310 and the second insulating layer 320 both cover the top surface of the back electrode layer 230 and the side surfaces of the back electrode layer 230 and the photoelectric conversion layer 220, but it should be noted that the present invention is not limited thereto. In another embodiment, the first insulating layer 310 covers the top surface of the back electrode layer 230 and the side surfaces of the back electrode layer 230 and the photoelectric conversion layer 220, and the second insulating layer 320 covers only the top surface of the back electrode layer 230. In another embodiment, the first insulating layer 310 covers only the top surface of the back electrode layer 230, and the second insulating layer 320 covers the top surface of the back electrode layer 230 and the side surfaces of the back electrode layer 230 and the photoelectric conversion layer 220.
The conductive layer 400 is disposed on the plurality of insulating layers 300 and electrically connected to the front electrode layer 210 exposed by the plurality of insulating layers 300. In detail, a portion of the conductive layer 400 is formed on the sidewalls of the plurality of insulating layers 300 to electrically connect with the front electrode layer 210. The conductive layer 400 is formed by sputtering or chemical vapor deposition, but the present invention is not limited thereto. The material of the conductive layer 400 is, for example, a metal, an alloy, or a metal oxide. For example, the material of the conductive layer 400 includes molybdenum tantalum (MoTa) or a combination of molybdenum tantalum and aluminum. In the present embodiment, the material of the conductive layer 400 is a combination of molybdenum, tantalum and aluminum. In the present embodiment, the conductive layer 400 is formed in the central region 10a of the thin-film solar cell 10. The conductive layer 400 can be used to further rapidly guide out the holes collected by the front electrode layer 210 in the central region 10a, so as to prevent the electron-hole pair from recombining to lower the conversion efficiency of the solar cell 200. In addition, since the conductive layer 400 is provided in the central region 10a so as to correspond to the front electrode layer 210, that is, since the orthographic projection of the conductive layer 400 substantially falls within the region of the front electrode layer 210, it is possible to avoid the transmittance of the central region 10a of the thin-film solar cell 10 being damaged by the provision of the conductive layer 400.
In one embodiment, the thin film solar cell 10 further includes a protection layer (not shown) disposed on the transparent substrate 100, and the protection layer (not shown) covers the conductive layer 400. The material of the passivation layer (not shown) can be inorganic material, organic material or a combination thereof, but is limited to transparent material. In the present embodiment, the passivation layer (not shown) is made of an organic material. The passivation layer (not shown) is used to protect the conductive layer 400 from the external environment.
To sum up, the utility model discloses a thin-film solar cell borrows to borrow and is provided with the complex layer insulating layer including the combination of inorganic material and organic material between back electrode layer and conducting layer, and can improve solar cell unit's electrical property, borrows this in order to increase thin-film solar cell's conversion efficiency. Furthermore, the utility model discloses a thin-film solar cell also borrows to set up the conducting layer in solar cell's the outside can derive the hole that the front electrode layer was collected rapidly by in central zone to avoid most electron-hole to compound once more and promote solar cell's conversion efficiency. In addition, the conductive layer of the present invention is provided in the central region so as to correspond to the front electrode layer, and thus the transmittance of the central region of the thin-film solar cell is not reduced.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (6)
1. A thin film solar cell, comprising:
a transparent substrate including a central region and a peripheral region surrounding the central region;
a solar cell unit disposed in the central region, comprising:
a front electrode layer disposed on the transparent substrate;
a photoelectric conversion layer located in the central region and disposed on the front electrode layer; and
a back electrode layer disposed on the photoelectric conversion layer;
a plurality of insulating layers covering the back electrode layer and exposing a portion of the front electrode layer, wherein the plurality of insulating layers at least comprise a first insulating layer and a second insulating layer which are sequentially stacked; and
and the conducting layer is arranged on the plurality of insulating layers and is electrically connected with the front electrode layer.
2. The thin film solar cell of claim 1 wherein the plurality of insulating layers cover a top surface of the back electrode layer and side surfaces of the back electrode layer and the photoelectric conversion layer.
3. The thin film solar cell of claim 1 wherein the first insulating layer covers a top surface of the back electrode layer and side surfaces of the back electrode layer and the photoelectric conversion layer, and the second insulating layer covers the top surface of the back electrode layer.
4. The thin film solar cell of claim 1 wherein the first insulating layer covers a top surface of the back electrode layer, and the second insulating layer covers a top surface of the back electrode layer and side surfaces of the back electrode layer and the photoelectric conversion layer.
5. The thin film solar cell of claim 1, wherein the first insulating layer has a thickness of 0.2 to 0.6 microns.
6. The thin film solar cell of claim 1, wherein the second insulating layer has a thickness of 2 to 4 microns.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108211455U TWM587827U (en) | 2019-08-28 | 2019-08-28 | Thin film solar cell |
| TW108211455 | 2019-08-28 |
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| Publication Number | Publication Date |
|---|---|
| CN211150572U true CN211150572U (en) | 2020-07-31 |
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| CN201921975296.3U Active CN211150572U (en) | 2019-08-28 | 2019-11-15 | Thin film solar cell |
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| CN (1) | CN211150572U (en) |
| TW (1) | TWM587827U (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI798951B (en) * | 2021-11-22 | 2023-04-11 | 凌巨科技股份有限公司 | Semi transmissive solar cell |
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- 2019-08-28 TW TW108211455U patent/TWM587827U/en unknown
- 2019-11-15 CN CN201921975296.3U patent/CN211150572U/en active Active
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| TWM587827U (en) | 2019-12-11 |
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