CN113488593B

CN113488593B - Thin film photovoltaic structure

Info

Publication number: CN113488593B
Application number: CN202110609487.3A
Authority: CN
Inventors: 柯崇文; 张宇帆; 张裕洋; 黄松健; 刘修铭
Original assignee: Ways Technical Corp Ltd
Current assignee: Ways Technical Corp Ltd
Priority date: 2021-06-01
Filing date: 2021-06-01
Publication date: 2023-11-14
Anticipated expiration: 2041-06-01
Also published as: CN113488593A

Abstract

The invention discloses a thin film photovoltaic structure, which comprises a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer and a plurality of first insulating regions. The first conductive layer is disposed on the substrate and has a plurality of first etching regions to divide the first conductive layer into a plurality of first conductive regions. The photovoltaic layer is arranged on the first conductive layer and is provided with a plurality of photovoltaic etching areas to divide the photovoltaic layer into a plurality of photovoltaic areas. The second conductive layer is disposed on the photovoltaic layer, and the second conductive layer has a plurality of second etching regions to divide the second conductive layer into a plurality of second conductive regions. The first insulating regions are respectively arranged below the second etching regions and on the upper surface of the photovoltaic region, and the width of a first insulating region of each first insulating region is larger than that of a second etching region of each second etching region.

Description

Thin film photovoltaic structure

Technical Field

The present invention relates to a photovoltaic structure, and more particularly, to a thin film photovoltaic structure.

Background

In the existing green energy technology, solar cells (i.e., photovoltaic cells) have been widely used. Solar cells can be classified into inorganic solar cells and organic solar cells, and the highest market occupancy in the market is still the traditional inorganic solar cells, such as Si, cdTe, CIGS. Although the life time and the cell efficiency of the organic solar cell cannot be compared with those of the inorganic solar cell, the organic solar cell still has higher design freedom and adaptability, for example: unique color, shape, transparency selection, etc., so that the utility model can be integrated into a building when in use, and can be combined with a curtain wall of the building to be designed to be richer in originality and change.

However, in preparing a large-area organic solar cell module, it is necessary to form a single independent cell unit by etching the upper and lower conductive layers, and then connect each single cell unit in series or connect a plurality of cell units in parallel by using a serial connection manner so as to meet the specification of use. In practice, these processes for etching the upper and lower conductive layers often have problems of leakage between the upper and lower electrodes due to the difficulty in matching the etching equipment and the process conditions.

On the other hand, even if the upper conductive layer is not etched, the pattern of the upper conductive layer is defined by vapor deposition shielding or screen printing, and the probability of module failure is also unavoidable in the manufacturing process.

In view of this, it is an urgent problem in the industry to provide a thin film photovoltaic structure that can protect the region where leakage or short circuit is likely to occur.

Disclosure of Invention

An object of the present invention is to provide a thin film photovoltaic structure, which can cover insulating materials for a first etching region and a second etching region to form an insulating region, so that the structure with the insulating region can not only be used for preventing electric leakage and short circuit opportunities caused by contact possibly caused by the first conductive layer and the second conductive layer during etching, but also avoid damage to the first conductive layer due to overetching effect when the second etching region is formed by an etching process. Therefore, the insulating material is used for covering the first etching region and the second etching region, so that the short circuit possibility possibly generated by contact of the first conducting layer and the second conducting layer can be prevented, the photoelectric conversion efficiency of the photovoltaic cell is effectively improved, and the production yield of the large-area modularized thin film photovoltaic cell is greatly improved.

To achieve the above object, a thin film photovoltaic structure of the present invention comprises: a substrate; the first conductive layer is arranged on the substrate and is provided with a plurality of first etching areas so as to divide the first conductive layer into a plurality of first conductive areas; the photovoltaic layer is arranged on the first conductive layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conductive layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conductive layer into a plurality of second conductive areas; and a plurality of first insulating regions respectively arranged below the plurality of second etching regions and on the upper surfaces of the photovoltaic regions, wherein the width of a first insulating region of each first insulating region is larger than that of a second etching region of each second etching region.

In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further comprises a plurality of second insulation regions, wherein each second insulation region is filled in each first etching region and covers an upper periphery of each first etching region.

In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further comprises a plurality of second insulation regions, wherein each second insulation region is partially filled in each first etching region and covers an upper periphery of each first etching region.

In the thin film photovoltaic structure of the present invention, the thin film photovoltaic structure further comprises a plurality of second insulation regions, each first etching region further penetrates through each photovoltaic region upwards, and each second insulation region is filled in each first etching region and covers an upper periphery of each first etching region.

In the thin film photovoltaic structure of the invention, each second etching region is partially overlapped with each photovoltaic etching region, and each first insulating region is partially filled in each photovoltaic etching region.

In the thin film photovoltaic structure of the present invention, the second etching region has a second etching region width of 20 micrometers to 500 micrometers, and the first insulating region has a first insulating region width of 25 micrometers to 1000 micrometers.

In the thin film photovoltaic structure of the invention, each first conductive region and the photovoltaic region corresponding to the first conductive region and the second conductive region form a primary photovoltaic structure; the second conductive area of one secondary photovoltaic structure is arranged on the upper surface of the first conductive area of the other adjacent secondary photovoltaic structure to be electrically connected, so that two adjacent secondary photovoltaic structures are connected in series.

In order to achieve the above object, the present invention further provides a thin film photovoltaic structure comprising: a substrate; the first conductive layer is arranged on the substrate and is provided with a plurality of first etching areas so as to divide the first conductive layer into a plurality of first conductive areas; the photovoltaic layer is arranged on the first conductive layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conductive layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conductive layer into a plurality of second conductive areas; and a plurality of second insulating regions, each second insulating region is filled in each first etching region and continuously covers and contacts the upper surface of each corresponding first conductive region, and the upper part of each second insulating region is covered by the corresponding photovoltaic region.

In order to achieve the above object, the present invention further provides a thin film photovoltaic structure comprising: a substrate; the first conductive layer is arranged on the substrate and is provided with a plurality of first etching areas so as to divide the first conductive layer into a plurality of first conductive areas; the photovoltaic layer is arranged on the first conductive layer and is provided with a plurality of photovoltaic etching areas so as to divide the photovoltaic layer into a plurality of photovoltaic areas; the second conductive layer is arranged on the photovoltaic layer and is provided with a plurality of second etching areas so as to divide the second conductive layer into a plurality of second conductive areas; and a plurality of second insulating regions, each of which extends upward through each of the photovoltaic regions, each of which is filled in each of the first etching regions and partially extends over and contacts the upper surface of each of the photovoltaic regions, and the upper part of each of which is covered by the corresponding second conductive region.

Drawings

Fig. 1 is a schematic view of a first embodiment of a thin film photovoltaic structure of the present invention.

Fig. 2 is a schematic view of a second embodiment of the thin film photovoltaic structure of the present invention.

Fig. 3 is a schematic view of a third embodiment of the thin film photovoltaic structure of the present invention.

Fig. 4 is a schematic view of a fourth embodiment of the thin film photovoltaic structure of the present invention.

Fig. 5 is a schematic view of a fifth embodiment of the thin film photovoltaic structure of the present invention.

Fig. 6 is a schematic view of a sixth embodiment of the thin film photovoltaic structure of the present invention.

Fig. 7 is a schematic view of a seventh embodiment of the thin film photovoltaic structure of the present invention.

Fig. 8 is a schematic view of an eighth embodiment of the thin film photovoltaic structure of the present invention.

Description of the figure:

1: thin film photovoltaic structure

11: substrate board

12: a first conductive layer

121: a first etching region

121a: upper peripheral edge

121b: side edge

122: a first conductive region

13: photovoltaic layer

131: photovoltaic etched region

132: photovoltaic region

14: second conductive layer

141: a second etching region

142: second conductive region

15: a first insulating region

16: second insulating region

16': left second insulating region

16": right second insulating region

W1: width of first insulating region

W2: the second etched region width.

Detailed Description

The invention relates to a thin film photovoltaic structure, which can isolate a leakage path between a first conductive layer and a second conductive layer through the arrangement of an insulating region, and reduce the short circuit chance of each other at the same time so as to further improve the photovoltaic conversion efficiency.

Please refer to fig. 1, which is a first embodiment of a thin film photovoltaic structure 1 of the present invention. The thin film photovoltaic structure 1 comprises a substrate 11, a first conductive layer 12, a photovoltaic layer 13, a second conductive layer 14 and a plurality of first insulating regions 15.

The first conductive layer 12 is disposed on the substrate 11, and the first conductive layer 12 has a plurality of first etching regions 121 to divide the first conductive layer 12 into a plurality of first conductive regions 122, and the first etching regions 121 are disposed between two adjacent first conductive regions 122. The photovoltaic layer 13 is disposed on the first conductive layer 12, and the photovoltaic layer 13 has a plurality of photovoltaic etched regions 131 to divide the photovoltaic layer 13 into a plurality of photovoltaic regions 132, wherein the photovoltaic etched regions 131 are disposed between two adjacent photovoltaic regions 132, and a portion of the photovoltaic regions 132 are filled in the first etched regions 121 and contact the substrate 11. The second conductive layer 14 is disposed on the photovoltaic layer 13, and the second conductive layer 14 has a plurality of second etching regions 141 to divide the second conductive layer 14 into a plurality of second conductive regions 142, and the second etching regions 141 are between two adjacent second conductive regions 142. Each of the first conductive regions 122 and the corresponding photovoltaic region 132 and the second conductive region 142 form a sub-photovoltaic structure, so that the thin film photovoltaic structure 1 actually also includes a plurality of sub-photovoltaic structures. The adjacent sub-photovoltaic structures are connected in series to boost the voltage, for example, in fig. 1, there are three sub-photovoltaic structures on the left side, the middle and right side, the second conductive region 142 of the sub-photovoltaic structure on the left side is deposited on the upper surface of the photovoltaic region 132 and the photovoltaic etching region 131, and the first conductive region 122 of the sub-photovoltaic structure (the middle sub-photovoltaic structure) adjacent to the sub-photovoltaic structure on the left side is also deposited to be electrically connected, so that the sub-photovoltaic structure on the left side is connected in series with the middle sub-photovoltaic structure, similarly the middle sub-photovoltaic structure is connected in series with the right sub-photovoltaic structure, and so on so that the overall voltage of the thin film photovoltaic structure 1 is boosted. The first insulation regions 15 are respectively disposed below the second etching regions 141 and on the upper surface of the photovoltaic region 132 of the photovoltaic layer 13, and a first insulation region width W1 of each first insulation region 15 is greater than a second etching region width W2 of each second etching region 141.

Wherein, the thickness of the substrate 11 is between 20 micrometers and 3000 micrometers, and the material of the substrate 11 can be one of light-transmitting plastic, glass and the like. The layer thickness of the first conductive layer 12 is between 20 nm and 10 μm, and the width of the first etching region 121 is between 10 and 500 μm.

The photovoltaic layer 13 may be of conventional construction and comprises at least one electron transport layer, at least one hole transport layer, and at least one light absorbing layer (not shown) interposed between the at least one electron transport layer and the at least one hole transport layer. The thickness of the photovoltaic layer 13 is between 50 nm and 2 μm, and the photovoltaic layer 13 can be formed by one of coating, spraying, printing, sputtering, evaporating, soaking, etc. The photovoltaic etched region 131 has a width of between 20 microns and 2 mm.

The second conductive layer 14 has a thickness of 10 nm to 2000 nm, and may be made of gold, silver, copper, aluminum or an alloy thereof, or a transparent conductive metal oxide, for example, at least one of indium-tin oxide (indium-tin oxide), indium-zinc oxide (indium-zinc oxide), indium-gallium-zinc oxide (indium gallium zinc oxide), aluminum-doped zinc oxide (aluminum-doped zinc oxide), or the like, as the second conductive layer 14.

The second etched region 141 has a second etched region width W2 of between 20 microns and 500 microns. The second etching region width W2 must be smaller than the first insulating region width W1 of the underlying first insulating region 15, and the first insulating region width W1 is between 25 micrometers and 1000 micrometers.

In detail, in the present invention, since the plurality of first insulating regions 15 are disposed below the plurality of second etching regions 141, the forming step is to form the plurality of first insulating regions 15 at specific positions on the plurality of photovoltaic regions 132, for example, by screen printing, then form the second conductive layer 14 on the photovoltaic layer 13, and then etch at positions corresponding to the plurality of first insulating regions 15 to form the plurality of second etching regions 141.

As shown in fig. 1, since the first insulating region width W1 of each first insulating region 15 is larger than the second etching region width W2 of each second etching region 141, when forming a plurality of second etching regions 141 by wet etching, laser etching, or mechanical scraping, the etching depth of the second etching regions 141 is stopped by contacting the first insulating region 15. In other words, the arrangement of the plurality of first insulating regions 15 can prevent the photovoltaic layer 13 under the second conductive layer 14 from being over-etched during the formation of the plurality of second etching regions 141, thereby ensuring that the thin film photovoltaic cell will not generate electric leakage or short circuit.

Please refer to the second embodiment shown in fig. 2, which is not repeated in the same points as the first embodiment, wherein the photovoltaic region 132 is not filled in the first etching region 121 and is not in contact with the substrate 11. In addition, in the thin film photovoltaic structure 1 of the second embodiment of the present invention, a plurality of second insulation regions 16 are further included, and each second insulation region 16 is filled in each first etching region 121, for example, in a screen printing manner, and covers an upper peripheral edge 121a of each first etching region 121. In other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 fills each first etching region 121 and continuously covers and contacts the upper surface of each corresponding first conductive region 122. Further, the second insulating region 16 fills the first etching region 121 and partially extends over and contacts the upper surface of the first conductive region 122 of the adjacent two sub-photovoltaic structures, for example, the second insulating region 16 located at the left side in fig. 2 fills the first etching region 121 and partially extends over and contacts the first conductive region 122 of the left side sub-photovoltaic structure and the first conductive region 122 of the middle sub-photovoltaic structure adjacent to each other. In addition, the photovoltaic region 132 covers the corresponding second insulating region 16.

In this way, after the first conductive layer 12 is etched to form the plurality of first etched regions 121, the metal particles generated in the etching process on the upper periphery 121a of the first etched regions 121 are covered by the second insulating region 16, so as to avoid the short circuit condition caused by the fact that the second conductive regions 142 are formed in the photovoltaic etched regions 131 and then are conducted with other first conductive regions 122 through the metal particles.

In the third embodiment shown in fig. 3, the thin film photovoltaic structure 1 may also further include a plurality of second insulation regions 16, and the difference between the second insulation regions 16 and the second embodiment is that each of the second insulation regions 16 in the third embodiment is only partially filled in each of the first etching regions 121 and covers the upper periphery 121a of each of the first etching regions 121 by being disposed along the sidewall, and the photovoltaic region 132 is filled in a portion of the first etching regions 121 and contacts the substrate 11. The second insulating region 16 is disposed in such a manner that the second insulating region 16 covers the metal particles on the upper periphery 121a of the first etching region 121, so as to avoid the short circuit condition caused by the fact that the second conductive region 142 is formed in the photovoltaic etching region 131 and then is conducted with the other first conductive regions 122 through the metal particles. In other words, each second insulating region 16 includes a left second insulating region 16' and a right second insulating region 16", the left second insulating region 16' and the right second insulating region 16" are disposed at intervals on the sidewalls of two adjacent first conductive regions 122 and respectively cover and contact the upper surfaces of the two corresponding adjacent first conductive regions 122, and the photovoltaic region 132 is filled between the left second insulating region 16' and the right second insulating region 16 "and contacts the substrate 11. The maximum distance between the end of the left second insulating region 16 'and the end of the right second insulating region 16″ is greater than the width of each first etching region 121, and the end of the left second insulating region 16' and the right second insulating region 16″ only fill a portion of each first etching region 121 and continuously cover and contact the upper surface of the corresponding first conductive region 122.

In the fourth embodiment shown in fig. 4, the thin film photovoltaic structure 1 also further includes a plurality of second insulation regions 16, and the difference between the second embodiment and the fourth embodiment is that each of the first etching regions 121 of the fourth embodiment further extends upward through each of the photovoltaic regions 132 (i.e. the first etching regions 121 are formed by etching the photovoltaic layer 13 and the first conductive layer 12 simultaneously after the photovoltaic layer 13 is disposed on the first conductive layer 12), and each of the second insulation regions 16 is filled in each of the first etching regions 121 and covers the upper periphery 121a and the side 121b of each of the first etching regions 121, in other words, the maximum width of each of the second insulation regions 16 is greater than the width of each of the first etching regions 121, and each of the second insulation regions 16 is filled in each of the first etching regions 121 and partially extends to cover and contact the upper surface of each of the photovoltaic regions 132. In addition, the upper portion of each second insulating region 16 is covered with the corresponding second conductive region 142.

Since the first etching region 121 of the fourth embodiment is formed by etching the photovoltaic layer 13 and the first conductive layer 12 simultaneously after the photovoltaic layer 13 is disposed on the first conductive layer 12, the second insulating region 16 is filled in the first etching region 121, so as to avoid the short circuit condition caused by the conduction between the second conductive region 142 and the other first conductive regions 122 disposed subsequently.

In the fifth embodiment shown in fig. 5, each of the second etching regions 141 overlaps each of the photovoltaic etching regions 131 partially, so that each of the first insulating regions 15 can be filled in each of the photovoltaic etching regions 131 partially and contact with the first conductive region 122 except that each of the first insulating regions 15 has a first insulating region width W1 greater than a second etching region width W2 of each of the second etching regions 141, thereby increasing the adhesion of the first insulating regions 15. In other words, the width of the photovoltaic etched region 131 is greater than the first insulating region width W1.

Specifically, after forming a plurality of photovoltaic etched regions 131 by etching the photovoltaic layer 13, each of the first insulating regions 15 is partially filled in one side periphery of each of the photovoltaic etched regions 131, and then the second conductive layer 14 is disposed on the photovoltaic layer 13, and etching is performed in a region corresponding to the first insulating regions 15 to form the second etched regions 141. The arrangement can also avoid the situation that the photovoltaic layer 13 below the second conductive layer 14 is over-etched in the process of forming the plurality of second etching regions 141, thereby ensuring that the thin film photovoltaic cell cannot generate electric leakage or short circuit.

The sixth embodiment shown in fig. 6 is a variation on the fifth embodiment based on fig. 5. In the sixth embodiment, in addition to the structure of the fifth embodiment, the thin film photovoltaic structure 1 further includes a plurality of second insulation regions 16, and each second insulation region 16 is filled in each first etching region 121 and covers the upper periphery 121a of each first etching region 121. After the first conductive layer 12 is etched to form a plurality of first etched regions 121, metal particles generated in the etching process on the upper periphery 121a of the first etched regions 121 are covered by the second insulating regions 16, so as to avoid a short circuit condition caused by the fact that the second conductive regions 142 are formed in the photovoltaic etched regions 131 and then are conducted with other first conductive regions 122 through the metal particles. In other words, the maximum width of each second insulating region 16 is greater than the width of each first etching region 121, and each second insulating region 16 fills each first etching region 121 and continuously covers and contacts the upper surface of each first conductive region 122. Further, the second insulating region 16 fills the first etching region 121 and partially extends over and contacts the upper surfaces of two adjacent first conductive regions 122, for example, the second insulating region 16 located at the left side in fig. 6 fills the first etching region 121 and partially extends over and contacts the first conductive region 122 located at the left side in the figure and the first conductive region 122 located at the middle in the figure, which are adjacent to each other.

The seventh embodiment shown in fig. 7 is also a variation on the fifth embodiment based on fig. 5. In the seventh embodiment, in addition to the structure of the fifth embodiment, the thin film photovoltaic structure 1 further includes a plurality of second insulation regions 16, and each second insulation region 16 is partially filled in each first etching region 121 and covers the upper periphery 121a of each first etching region 121. The second insulating regions 16 of the seventh embodiment are only partially filled in the first etching regions 121 along the sidewalls and cover the upper peripheral edges 121a of the first etching regions 121, so the second insulating regions 16 are also arranged in such a way that the second insulating regions 16 cover the metal particles on the upper peripheral edges 121a of the first etching regions 121, so as to avoid the short circuit condition caused by the fact that the second conductive regions 142 are formed in the photovoltaic etching regions 131 and then may be conducted with other first conductive regions 122 through the metal particles. In other words, each second insulating region 16 includes a left second insulating region 16' and a right second insulating region 16", the left second insulating region 16' and the right second insulating region 16" are disposed at intervals on the sidewalls of two adjacent first conductive regions 122 and respectively cover and contact the upper surfaces of the two corresponding adjacent first conductive regions 122, and the photovoltaic region 132 is filled between the left second insulating region 16' and the right second insulating region 16 "and contacts the substrate 11. The maximum distance between the end of the left second insulating region 16 'and the end of the right second insulating region 16″ is greater than the width of each first etching region 121, and the end of the left second insulating region 16' and the right second insulating region 16″ only fill a portion of each first etching region 121 and continuously cover and contact the upper surface of the corresponding first conductive region 122.

The eighth embodiment shown in fig. 8 is also a variation on the fifth embodiment based on fig. 5. In the eighth embodiment, the thin film photovoltaic structure 1 further comprises a plurality of second insulating regions 16 in addition to the structure of the fifth embodiment, each of the first etching regions 121 further extends upward through each of the photovoltaic regions 132 (i.e. the first etching regions 121 are formed by etching the photovoltaic layer 13 and the first conductive layer 12 simultaneously after the photovoltaic layer 13 is disposed on the first conductive layer 12), and each of the second insulating regions 16 fills each of the first etching regions 121 and covers the upper periphery 121a and the side 121b of each of the first etching regions 121. In other words, the maximum width of each second insulation region 16 is greater than the width of each first etching region 121, and each second insulation region 16 fills each first etching region 121 and partially extends over and contacts the upper surface of each photovoltaic region 132. Since the first etching region 121 of the eighth embodiment is formed by etching the photovoltaic layer 13 and the first conductive layer 12 simultaneously after the photovoltaic layer 13 is disposed on the first conductive layer 12, the second insulating region 16 is filled in the first etching region 121, so as to avoid the short circuit condition caused by the conduction between the second conductive region 142 and the other first conductive regions 122 disposed subsequently.

It should be noted that the first insulating region 15 and the second insulating region 16 are prepared by one of printing, coating or spraying, and the materials used for the first insulating region 15 and the second insulating region 16 are selected from one of UV glue, epoxy resin, photosensitive polyimide resin, silicon oxide, silicon dioxide, silicon nitride, and the like.

In summary, since the thin film photovoltaic structure 1 of the present invention can cover the first etching region 121 and the second etching region 141 with the insulating material to form the second insulating region 16 and the first insulating region 15 respectively, the structure having the second insulating region 16 and the first insulating region 15 not only can be used to block the first conductive region 122 and the second conductive region 142 from possibly causing the leakage and the short circuit caused by the contact with other conductive regions during etching, but also can avoid the damage to the photovoltaic layer 13 and the first conductive layer 12 caused by the overetching effect during the formation of the second etching region 141 by the etching process. Therefore, the insulating material is used to cover the first etching region 121 and the second etching region 141, so as to prevent the first conductive layer 12 and the second conductive layer 14 from being shorted by contacting other conductive layers, thereby effectively improving the photoelectric conversion efficiency of the photovoltaic cell and greatly improving the production yield of the large-area modularized thin film photovoltaic cell.

Claims

1. A thin film photovoltaic structure comprising:

a base plate (11);

a first conductive layer (12) disposed on the substrate (11), wherein the first conductive layer (12) has a plurality of first etching regions (121) to divide the first conductive layer (12) into a plurality of first conductive regions (122);

a photovoltaic layer (13) disposed on the first conductive layer (12), and the photovoltaic layer (13) has a plurality of photovoltaic etched regions (131) to divide the photovoltaic layer (13) into a plurality of photovoltaic regions (132);

a second conductive layer (14) disposed on the photovoltaic layer (13), wherein the second conductive layer (14) has a plurality of second etching regions (141) to divide the second conductive layer (14) into a plurality of second conductive regions (142); and

a plurality of first insulating regions (15) disposed below the second etching regions (141) and on the upper surfaces of the photovoltaic regions (132), wherein a first insulating region width (W1) of each first insulating region (15) is greater than a second etching region width (W2) of each second etching region (141);

wherein each first conductive region (122) and the corresponding photovoltaic region (132) and the second conductive region (142) form a primary photovoltaic structure; the second conductive region (142) of one sub-photovoltaic structure is disposed on the upper surface of the first conductive region (122) of the adjacent other sub-photovoltaic structure and electrically connected to each other, so that two adjacent sub-photovoltaic structures are connected in series.

2. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), each second insulating region (16) filling each first etched region (121) and surrounding an upper periphery (121 a) of each first etched region (121).

3. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), each second insulating region (16) partially filling each first etched region (121) and surrounding an upper periphery (121 a) of each first etched region (121).

4. The thin film photovoltaic structure of claim 1, further comprising a plurality of second insulating regions (16), each of the first etching regions (121) further penetrating each of the photovoltaic regions (132) upward, and each of the second insulating regions (16) filling each of the first etching regions (121) and covering an upper periphery (121 a) of each of the first etching regions (121).

5. The thin film photovoltaic structure of claim 1, wherein each of the second etched regions (141) partially overlaps each of the photovoltaic etched regions (131), and each of the first insulating regions (15) partially fills each of the photovoltaic etched regions (131).

6. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), each second insulating region (16) filling each first etched region (121) and surrounding an upper periphery (121 a) of each first etched region (121).

7. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), each second insulating region (16) partially filling each first etched region (121) and surrounding an upper periphery (121 a) of each first etched region (121).

8. The thin film photovoltaic structure of claim 5, further comprising a plurality of second insulating regions (16), each of the first etching regions (121) further penetrating each of the photovoltaic regions (132) upward, and each of the second insulating regions (16) filling each of the first etching regions (121) and covering an upper periphery (121 a) of each of the first etching regions (121).

9. The thin film photovoltaic structure of claim 1, wherein the second etched region (141) has a second etched region width (W2) of between 20 and 500 microns and the first insulated region (15) has a first insulated region width (W1) of between 25 and 1000 microns.

10. A thin film photovoltaic structure comprising:

a base plate (11);

a plurality of second insulating regions (16), each second insulating region (16) is filled in each first etching region (121) and continuously covers and contacts the upper surface of each corresponding first conductive region (122), and the upper part of each second insulating region (16) is covered by the corresponding photovoltaic region (132);

11. A thin film photovoltaic structure comprising:

a base plate (11);

a plurality of second insulating regions (16), each of the first etching regions (121) further penetrating each of the photovoltaic regions (132) upward, each of the second insulating regions (16) filling each of the first etching regions (121) and partially continuing to cover and contact the upper surface of each of the photovoltaic regions (132), and the upper side of each of the second insulating regions (16) being covered by the corresponding second conductive region (142);