CN113454792A - 一种功能器件及其制造方法 - Google Patents
一种功能器件及其制造方法 Download PDFInfo
- Publication number
- CN113454792A CN113454792A CN201880097595.3A CN201880097595A CN113454792A CN 113454792 A CN113454792 A CN 113454792A CN 201880097595 A CN201880097595 A CN 201880097595A CN 113454792 A CN113454792 A CN 113454792A
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- layer
- semiconductor layer
- functional
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- functional device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 158
- 239000002184 metal Substances 0.000 claims abstract description 124
- 229910052751 metal Inorganic materials 0.000 claims abstract description 124
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000003054 catalyst Substances 0.000 claims abstract description 31
- 238000002425 crystallisation Methods 0.000 claims abstract description 25
- 230000008025 crystallization Effects 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 230000003197 catalytic effect Effects 0.000 claims abstract description 9
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 42
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- -1 boron ions Chemical class 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 229920002457 flexible plastic Polymers 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
一种功能器件的制造方法及功能器件，所述方法包括：提供衬底基板(110)(S110)；形成第一非晶态半导体层(130)(S120)；沉积第一绝缘层(140)在第一非晶态半导体层(130)上(S130)；在第一绝缘层(140)上形成第一开口(141)以使第一非晶态半导体层(130)部分裸露(S140)；沉积金属催化层(160)，并且所述金属催化层(160)沉积到第一开口(141)中且与第一非晶态半导体层(130)接触(S150)；进行退火结晶处理，以使所述第一非晶态半导体层(130)通过金属催化结晶为第一多晶态半导体层(230)(S160)；对所述金属催化层(160)处理以形成功能金属层(161)(S170)；制备其他膜层以形成功能器件(S180)。该方法具有可简化制程、减少步骤、降低成本的优点。
Description
PCT国内申请，说明书已公开。
Claims (24)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/124342 WO2020133059A1 (zh) | 2018-12-27 | 2018-12-27 | 一种功能器件及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113454792A true CN113454792A (zh) | 2021-09-28 |
Family
ID=71126417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880097595.3A Pending CN113454792A (zh) | 2018-12-27 | 2018-12-27 | 一种功能器件及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113454792A (zh) |
| WO (1) | WO2020133059A1 (zh) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207481B1 (en) * | 1999-03-24 | 2001-03-27 | Lg. Phillips Lcd Co., Ltd. | Thin film transistor having a crystallization seed layer and a method for manufacturing thereof |
| US20020115242A1 (en) * | 2001-01-20 | 2002-08-22 | Joo Seung Ki | Method and apparatus for fabricating thin film transistor including crystalline active layer |
| CN1431711A (zh) * | 2001-12-19 | 2003-07-23 | 三星Sdi株式会社 | 互补金属氧化物半导体薄膜晶体管及其制造方法 |
| CN1983571A (zh) * | 2005-12-13 | 2007-06-20 | 三星Sdi株式会社 | 多晶硅层、使用其的平板显示器及其制造方法 |
| CN101373793A (zh) * | 2007-08-23 | 2009-02-25 | 三星Sdi株式会社 | 薄膜晶体管及其制造方法以及有机发光二极管显示装置 |
| US8174012B2 (en) * | 2006-11-10 | 2012-05-08 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100611224B1 (ko) * | 2003-11-22 | 2006-08-09 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
| EP1837304A3 (en) * | 2006-03-20 | 2012-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Micromachine including a mechanical structure connected to an electrical circuit and method for manufacturing the same |
| CN105990138B (zh) * | 2015-01-30 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其形成方法 |
-
2018
- 2018-12-27 CN CN201880097595.3A patent/CN113454792A/zh active Pending
- 2018-12-27 WO PCT/CN2018/124342 patent/WO2020133059A1/zh active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207481B1 (en) * | 1999-03-24 | 2001-03-27 | Lg. Phillips Lcd Co., Ltd. | Thin film transistor having a crystallization seed layer and a method for manufacturing thereof |
| US20020115242A1 (en) * | 2001-01-20 | 2002-08-22 | Joo Seung Ki | Method and apparatus for fabricating thin film transistor including crystalline active layer |
| CN1431711A (zh) * | 2001-12-19 | 2003-07-23 | 三星Sdi株式会社 | 互补金属氧化物半导体薄膜晶体管及其制造方法 |
| CN1983571A (zh) * | 2005-12-13 | 2007-06-20 | 三星Sdi株式会社 | 多晶硅层、使用其的平板显示器及其制造方法 |
| US8174012B2 (en) * | 2006-11-10 | 2012-05-08 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN101373793A (zh) * | 2007-08-23 | 2009-02-25 | 三星Sdi株式会社 | 薄膜晶体管及其制造方法以及有机发光二极管显示装置 |
| US20090050893A1 (en) * | 2007-08-23 | 2009-02-26 | Samsung Sdi Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020133059A1 (zh) | 2020-07-02 |
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Application publication date: 20210928 |
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