CN113451252B - 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 - Google Patents
具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 Download PDFInfo
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- CN113451252B CN113451252B CN202010226320.4A CN202010226320A CN113451252B CN 113451252 B CN113451252 B CN 113451252B CN 202010226320 A CN202010226320 A CN 202010226320A CN 113451252 B CN113451252 B CN 113451252B
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- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 239000000919 ceramic Substances 0.000 title claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 238000003466 welding Methods 0.000 claims abstract description 45
- 230000017525 heat dissipation Effects 0.000 claims abstract description 39
- 238000009434 installation Methods 0.000 claims abstract description 17
- 230000004927 fusion Effects 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 28
- 230000001681 protective effect Effects 0.000 claims description 20
- 238000005476 soldering Methods 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000003137 locomotive effect Effects 0.000 description 2
- 238000004021 metal welding Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000010718 Oxidation Activity Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010226320.4A CN113451252B (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
CN202311492196.6A CN117352470A (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010226320.4A CN113451252B (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
Related Child Applications (1)
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CN202311492196.6A Division CN117352470A (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
Publications (2)
Publication Number | Publication Date |
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CN113451252A CN113451252A (zh) | 2021-09-28 |
CN113451252B true CN113451252B (zh) | 2024-05-14 |
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CN202311492196.6A Pending CN117352470A (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
CN202010226320.4A Active CN113451252B (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
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CN202311492196.6A Pending CN117352470A (zh) | 2020-03-27 | 2020-03-27 | 具有保护接垫的高导热陶瓷基板及具该基板的大功率模块 |
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CN (2) | CN117352470A (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235852A (ja) * | 2007-02-23 | 2008-10-02 | Hitachi Metals Ltd | セラミックス基板及びこれを用いた半導体モジュール |
TW201131713A (en) * | 2010-03-15 | 2011-09-16 | Tsung-Hsien Lin | Electronic assembly |
TW201212306A (en) * | 2010-09-10 | 2012-03-16 | Ho Cheng Ind Co Ltd | LED heat-conduction substrate and heat-dissipation module structure |
CN103928447A (zh) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | 一种大功率全气密半导体模块封装结构 |
WO2014115677A1 (ja) * | 2013-01-22 | 2014-07-31 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール |
WO2015053316A1 (ja) * | 2013-10-10 | 2015-04-16 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板及びその製造方法 |
CN106165087A (zh) * | 2014-04-25 | 2016-11-23 | 三菱综合材料株式会社 | 功率模块用基板、带散热片的功率模块用基板及带散热片的功率模块 |
TW201829108A (zh) * | 2016-12-14 | 2018-08-16 | 日商新川股份有限公司 | 打線接合裝置以及打線接合方法 |
-
2020
- 2020-03-27 CN CN202311492196.6A patent/CN117352470A/zh active Pending
- 2020-03-27 CN CN202010226320.4A patent/CN113451252B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235852A (ja) * | 2007-02-23 | 2008-10-02 | Hitachi Metals Ltd | セラミックス基板及びこれを用いた半導体モジュール |
TW201131713A (en) * | 2010-03-15 | 2011-09-16 | Tsung-Hsien Lin | Electronic assembly |
TW201212306A (en) * | 2010-09-10 | 2012-03-16 | Ho Cheng Ind Co Ltd | LED heat-conduction substrate and heat-dissipation module structure |
CN103928447A (zh) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | 一种大功率全气密半导体模块封装结构 |
WO2014115677A1 (ja) * | 2013-01-22 | 2014-07-31 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール |
WO2015053316A1 (ja) * | 2013-10-10 | 2015-04-16 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板及びその製造方法 |
CN106165087A (zh) * | 2014-04-25 | 2016-11-23 | 三菱综合材料株式会社 | 功率模块用基板、带散热片的功率模块用基板及带散热片的功率模块 |
TW201829108A (zh) * | 2016-12-14 | 2018-08-16 | 日商新川股份有限公司 | 打線接合裝置以及打線接合方法 |
Also Published As
Publication number | Publication date |
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CN117352470A (zh) | 2024-01-05 |
CN113451252A (zh) | 2021-09-28 |
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Effective date of registration: 20240626 Address after: No. 526, Nanshang Road, Guishan District, Taoyuan, Taiwan, China, China Patentee after: ICP TECHNOLOGY Co.,Ltd. Country or region after: TaiWan, China Patentee after: XIAMEN SENTEC E&E CO.,LTD. Country or region after: China Address before: No. 526, Nanshang Road, Guishan District, Taoyuan, Taiwan, China, China Patentee before: ICP TECHNOLOGY Co.,Ltd. Country or region before: TaiWan, China Patentee before: Shanghai Zhaohui Technology Co.,Ltd. Country or region before: China |