WO2022174396A1 - 封装结构、动力电气控制系统及制造方法 - Google Patents

封装结构、动力电气控制系统及制造方法 Download PDF

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Publication number
WO2022174396A1
WO2022174396A1 PCT/CN2021/076928 CN2021076928W WO2022174396A1 WO 2022174396 A1 WO2022174396 A1 WO 2022174396A1 CN 2021076928 W CN2021076928 W CN 2021076928W WO 2022174396 A1 WO2022174396 A1 WO 2022174396A1
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WIPO (PCT)
Prior art keywords
substrate
power
package structure
control unit
welding
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PCT/CN2021/076928
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English (en)
French (fr)
Inventor
刘志华
陈惠斌
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华为数字能源技术有限公司
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Application filed by 华为数字能源技术有限公司 filed Critical 华为数字能源技术有限公司
Priority to PCT/CN2021/076928 priority Critical patent/WO2022174396A1/zh
Priority to EP21926116.1A priority patent/EP4102563A4/en
Priority to CN202180067212.XA priority patent/CN116420229A/zh
Publication of WO2022174396A1 publication Critical patent/WO2022174396A1/zh
Priority to US18/452,108 priority patent/US20230395556A1/en

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Definitions

  • the present application relates to the technical field of electronic products, and in particular, to a packaging structure, a power electrical control system and a manufacturing method.
  • the electrodes on the chip and the pins on the circuit board need to be connected by wire bonding, and the number of wires is large and dense. Risks such as offset short circuit affect the working reliability of the power module.
  • the present application provides a package structure to improve product integration and reliability of the package structure.
  • the present application provides a package structure, the package structure includes a first substrate and a second substrate; a power unit is provided on a first surface of the first substrate; a control unit is provided on the first surface of the second substrate, The second substrate is connected to one end of the first substrate, and the control unit is electrically connected to the power unit.
  • the control unit is used to receive external input signals and collect internal sensing signals, and to control the operation of the power unit; wherein, the first surface of the second substrate is connected to the second substrate.
  • the first surface of a substrate is disposed on the same side.
  • the power unit is the power part
  • the control unit is the signal part
  • the power unit is arranged on the first substrate
  • the control unit is arranged on the second substrate
  • the second substrate is connected to the first substrate, thereby connecting the signal part It is integrated with the power part to meet the requirements of highly integrated and intelligent products.
  • the power unit is arranged on the first substrate
  • the control unit is arranged on the second substrate independent of the first substrate. The signal part and the power part can be connected.
  • multiple rows of power cells may be disposed on the first substrate, each row of power cells includes more than one power cell arranged in the first direction, and the same row of power cells may be electrically connected through the first connection portion.
  • the power units can be arranged in multiple rows, each row includes more than one power unit, and the multiple power units are arranged at intervals as a whole, which is beneficial to improve the heat dissipation efficiency of the power part.
  • the first connection part may include a conductive member, the conductive member may be in the shape of a multi-arch bridge, and the conductive member includes a plurality of arch structures and a connection part connected between adjacent arch structures. The part is electrically connected to the power unit.
  • the multi-arch bridge-shaped conductive parts connect the power units in the same row in parallel. Compared with the connection method using metal wire bonding, the conductive parts have a firm shape and a stable position after connection. High performance, low contact resistance of the conductive parts, low energy consumption, and simple connection and manufacturing process of the conductive parts.
  • control unit is electrically connected to the power unit through a second connection part, and the second connection part may include at least one flexible circuit board.
  • the control unit and the power unit can make the lines connected to the power unit symmetrically distributed, optimize the circuit layout of multiple power chips in parallel, and achieve a high degree of symmetry of the layout.
  • the power units are connected with shorter lines to reduce parasitic inductance and avoid line collapse.
  • conductive lines may be arranged on the second substrate, and the flexible circuit board is electrically connected to the control unit through the conductive lines on the second substrate.
  • the arrangement of the conductive lines facilitates the electrical connection between the flexible circuit board and the second substrate, and also facilitates the electrical connection between the control unit and the second substrate.
  • one end of the second substrate may be stacked on one end of the first substrate.
  • the stacking arrangement of the second substrate and the first substrate can reduce the total length after the second substrate and the first substrate are connected, and reduce the space occupied by the entire package structure in the lateral dimension.
  • the second surface of the second substrate may be connected to the first surface of the first substrate, the second surface of the second substrate may be provided with a first welding portion, and the first surface of the first substrate may be A second welding part is provided, and the first welding part is welded with the second welding part; or, the first surface of the second substrate can be connected with the second surface of the first substrate, and the first surface of the second In the welding part, the second surface of the first substrate may be provided with a second welding part, and the first welding part is welded with the second welding part.
  • the arrangement of the first welding part and the second welding part enables the second substrate and the first substrate to be connected by welding, and the connection is convenient and reliable.
  • one end of the second substrate and one end of the first substrate may be arranged against each other.
  • the arrangement of the second substrate against the first substrate can reduce the total height of the second substrate after connecting with the first substrate and reduce the space occupied by the entire package structure in the longitudinal dimension.
  • a first welding portion may be provided on one end surface of the second substrate for abutting against the first substrate, and a second welding portion may be provided on one end surface of the first substrate for abutting against the second substrate , the first welding part is welded with the second welding part.
  • the arrangement of the first welding portion and the second welding portion makes the connection between the second substrate and the first substrate convenient and reliable.
  • the first welding portion When specifically disposing the first welding portion and the second welding portion, the first welding portion may be in the shape of a strip; alternatively, the first welding portion may include a plurality of welding blocks arranged in parallel; or, the second welding portion may be in the shape of a strip; Alternatively, the second welding portion may include a plurality of welding bumps arranged in parallel.
  • the alignment between the strip-shaped welding parts is easier, and the connection of the two plates can be made more stable, and the welding parts formed by a plurality of welding blocks arranged in a row can save the solder used for the welding parts.
  • the welding part has two structural forms, with high flexibility, which is convenient for diversification according to actual needs.
  • the end of the second substrate away from the first substrate may be provided with a first lead portion, and the first lead portion is electrically connected to the control unit; the end of the first substrate away from the second substrate may be provided with a second lead portion The lead portion and the second lead portion are electrically connected to the power unit.
  • the arrangement of the lead portion facilitates the electrical connection between the package structure and the external components.
  • the end of the first lead portion away from the second substrate may be planar or stepped, and the end of the second lead portion away from the first substrate may be planar or stepped.
  • the lead part has two structural forms, with high flexibility, which is convenient for diversification according to actual needs. Among them, the planar lead portion has short connection lines; the stepped lead portion facilitates the structural fit between the package structure and the surrounding components, and facilitates the integration of the package structure with other components.
  • the first substrate may be a ceramic substrate or a brazing substrate with conductive materials on both sides.
  • This type of plate has good thermal conductivity, and the choice of the first substrate can improve the heat dissipation efficiency of the power chip, and it is relatively heat-resistant, can adapt to high-temperature use scenarios, and can also arrange circuits.
  • the second substrate may be a printed circuit board, or the second substrate may be a ceramic substrate or a solder substrate with conductive materials on both sides.
  • This kind of plate is selected as the second substrate, which is convenient for arranging the conduction lines between the components, and also has good thermal conductivity, which can adapt to the high temperature use scene.
  • the power unit may include a power chip, and the side of the power chip with pins may be away from the first substrate.
  • the opposite side of the side with pins of the power chip is the main heat dissipation area, and the side of the power chip with pins is far away from the first substrate, that is, the power chip is installed on the first substrate in a positive mounting method, so that the main heat dissipation area of the power chip is Direct contact with the first substrate with high thermal conductivity is beneficial to heat dissipation of the power chip.
  • control unit may include a control chip, and the side of the control chip with pins may face the second substrate. That is to say, the control chip is mounted on the second substrate by flip-chip mounting.
  • This mounting method can shorten wiring lines, reduce signal interference, reduce parasitic parameters, shorten signal delay, and ensure rapid response of the circuit and timely response of the protection function. , It can also avoid the risk of collapsed lines caused by dense wiring, and the risks of offset short-circuiting of punched lines.
  • a heat dissipation member may be provided on the side of the control chip away from the second substrate.
  • the arrangement of the heat sink can improve the heat dissipation efficiency of the control chip, which is beneficial to ensure the performance and service life of the control chip.
  • control unit may include a control chip
  • control unit may further include a driver chip
  • the side of the driver chip with pins faces the second substrate.
  • the driver chip is mounted on the second substrate by flip-chip mounting, which can shorten wiring lines, reduce signal interference, reduce parasitic parameters, shorten signal delay, ensure rapid response of the circuit, timely response of the protection function, and avoid intensive Risks such as wire collapse and offset short circuit caused by wiring.
  • the packaging structure may further include a housing with an accommodating space inside the housing, and the first substrate and the second substrate are located in the housing.
  • the casing wraps the first substrate, the second substrate and the components on the two substrates, which can protect the wrapped components and stabilize the connection between the components.
  • a region corresponding to the second surface of the first substrate on the casing may have a first notch; an area corresponding to the control unit on the casing may have a second notch.
  • the arrangement of the notch is beneficial to speed up the local heat dissipation speed of the package structure.
  • the second surface of the first substrate may be provided with a first heat sink; the side of the control unit facing away from the second substrate may be provided with a second heat sink.
  • the arrangement of the heat sink is beneficial to speed up the heat dissipation speed of the components.
  • the present application provides a power electrical control system, including the aforementioned packaging structure, where the packaging structure is used to convert the direct current of the battery into alternating current to provide the power device.
  • the power electrical control system is controlled by a central control system, such as the central control system of an electric vehicle.
  • the power electrical control system itself is also intelligent and has high working reliability.
  • the present application provides a method for manufacturing a package structure, comprising:
  • control unit installed on the first surface of the second substrate, so that the control unit is electrically connected to the conduction lines arranged on the second substrate;
  • a first welding part is arranged at one end of the second substrate, a second welding part is arranged at one end of the first substrate, and the first welding part and the second welding part are welded, so that the second substrate and the first substrate are connected as a whole;
  • the power unit provided on the first substrate is electrically connected to the conduction line arranged on the second substrate through the second connection portion, so that the power unit and the control unit are electrically connected;
  • Plastic sealing is performed on the first substrate and the second substrate connected as a whole.
  • the technical solution provided in this application can realize the connection between the second substrate and the first substrate, integrate the signal part with the power part, and meet the requirements of highly integrated and intelligent products.
  • the power unit is arranged on the first substrate and controls The unit is arranged on the second substrate independent of the first substrate, so that the signal part and the power part are arranged separately, reducing the thermal interference to the signal part when the power part is working, and reducing the heat transfer from the area where the power part is located to the area where the signal part is located and temperature shock to avoid failure of the performance of the signal part due to high temperature damage, and the manufactured package structure has high integration, high reliability and long service life.
  • FIG. 1 is a schematic three-dimensional structural diagram of a packaging structure provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a first surface of a first substrate in a package structure provided by an embodiment of the present application;
  • FIG. 3 is a schematic structural diagram of a side view of a first substrate in a package structure provided by an embodiment of the present application;
  • FIG. 4 is a schematic diagram of the assembly of the control chip and the second substrate in the package structure provided by the embodiment of the present application;
  • FIG. 5 is a schematic structural diagram of a first surface of a second substrate in a package structure provided by an embodiment of the present application
  • FIG. 6 is a schematic diagram of the connection relationship between the first substrate and the second substrate in the package structure provided by the embodiment of the present application;
  • FIG. 7 is a schematic diagram of the arrangement position of the welding portion in the package structure provided by the embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a welding portion in a package structure provided by an embodiment of the present application.
  • FIG. 9 is another schematic structural diagram of the welding portion in the package structure provided by the embodiment of the present application.
  • FIG. 10 is a schematic diagram of another connection relationship between the first substrate and the second substrate in the package structure provided by the embodiment of the application;
  • FIG. 11 is a flowchart of a method for manufacturing a package structure provided by an embodiment of the present application.
  • the packaging structure provided by the embodiments of the present application can be adapted to an electrical control system, such as an on-board power electrical control system, which can be specifically integrated in an electric vehicle, exemplarily, can be used as a three-phase full-bridge inverter of a motor drive controller,
  • the DC power of the battery is converted into AC power and supplied to the motor.
  • the existing power module packaging structure only has a power part, and the degree of integration and intelligence is low.
  • the electrical connection method of wire bonding is used between the power part and the circuit board.
  • the wire type and wire diameter of the wire itself are various, which makes the production process more steps and equipment investment, not only the production efficiency
  • the wire bonding due to the large number of chips integrated in the power part, when the electrodes on the chip and the pins on the circuit board are connected by wire bonding, a large number of wires are used.
  • the arrangement is dense, and there are risks such as wire collapse, offset short circuit and so on during the packaging process.
  • the embodiments of the present application provide a package structure, which can package the signal part and the power part together, and the product integration degree is high; Reduce the thermal interference of the power part to the signal part and improve the working reliability of the product.
  • FIG. 1 shows a schematic three-dimensional structure diagram of a package structure provided by an embodiment of the present application.
  • the package structure may include a first substrate 100 and a second substrate 200 .
  • the first surface of the first substrate 100 is provided with a plurality of power units 110 arranged at intervals, and the plurality of power units 110 can be electrically connected through the first connection portion 300 , and the plurality of power units 110 as a whole constitute a power part of a power module.
  • the second substrate 200 is connected to one end of the first substrate 100 , the first surface of the second substrate 200 is provided with the control unit 210 , the control unit 210 and the power unit 110 can be electrically connected through the second connection part 400 , and the control unit 210 is the power The signal part of the module.
  • the power unit 110 is disposed on the first substrate 100
  • the control unit 210 is disposed on the second substrate 200
  • the second substrate 200 is connected to the first substrate 100, so that the signal part and the power part are integrated to meet the requirements of high product quality. requirements for integration and intelligence.
  • the first substrate 100 and the second substrate 200 are independent of each other, and the signal part and the power part can be arranged separately, thereby reducing the thermal interference to the signal part when the power part is working, and reducing the transmission from the area where the power part is located to the area where the signal part is located. Heat and temperature shock, to avoid the failure of the performance of the signal part due to high temperature damage, improve product reliability and prolong product life.
  • the plurality of power units 110 may adopt a uniformly spaced and symmetrical spatial layout structure.
  • the plurality of power units 110 may be arranged in multiple rows along the direction from one end to the other end of the first substrate 100 , the row spacing may be the same, and the number of power units 110 in each row may be two or more.
  • the direction from one end of the first substrate 100 to the other end is defined as the first direction x, and the multiple rows of power cells 110 may be symmetrically distributed with respect to the centerline of the first substrate 100 in the first direction.
  • the power units 110 in the same row can be electrically connected through a first connection part 300 .
  • the power unit 110 may be a power chip 111 .
  • the power chip 111 can be selected from a metal-oxide-semiconductor field-effect transistor (MOSFET), for example, the power chip 111 can be silicon (Si), silicon carbide (SiC) or gallium nitride. (GaN) MOSFETs.
  • the control unit 210 may include a control chip 211, for example, the control chip 211 may be an application specific integrated circuit (ASIC) chip, or a digital signal processing (digital signal processing, DSP) chip.
  • the control unit 210 may further include a driver chip 212 . In this case, the control chip 211 and the driver chip 212 may be provided on the second substrate 200 at the same time.
  • the control chip 211 can be used to receive external input signals, such as control signals, and the control signals are processed by the control chip 211 and then sent to the driving chip 212.
  • the signal is amplified, isolated, filtered, etc., and then sent to the power chip 111 through the second connection portion 400 to control the multiple power chips 111 to complete turn-on and turn-off commands.
  • the control chip 211 is also used to collect the temperature information of the power chip 111, the temperature information of the chip-related accessories on the first substrate 100, and the current information of the power chip 111, and to send the collected initial information to the outside, or to the collected initial information. The initial information is processed and judged and sent out.
  • the first substrate 100 can be a substrate with high thermal conductivity with thick conductive materials on both sides, so as to adapt to high temperature usage scenarios.
  • the first substrate 100 can specifically be a double-sided copper-clad ceramic substrate (direct bond ceramic, DBC), a double-sided aluminum-clad ceramic substrate (direct bond aluminum, DBA), active metal brazing (active metal brazing, AMB)
  • DBC direct bond ceramic
  • DBA double-sided aluminum-clad ceramic substrate
  • active metal brazing active metal brazing
  • AMB Aluminum nitride (AlN) or silicon nitride (Si 3 N 4 ) ceramic substrates, zirconia toughened alumina (ZTA) double-sided copper-clad ceramic substrates (ie ZTA DBC), and so on.
  • the thickness of the surface copper layer of the first substrate 100 may be 0.1 ⁇ 1.2 mm, for example, the thickness of the surface copper layer may be 0.1 mm, 1.05 mm, 1.2 mm, and so on.
  • the second substrate 200 may be a printed circuit board (printing circuit board, PCB).
  • the second substrate 200 can also use the above-mentioned DBC, DBA, or double-sided copper-plated ceramic (DPC), etc.
  • the thickness of the conductive material on both sides of the second substrate 200 can be relatively Thin.
  • a first conduction line is arranged on the first substrate 100 , and the first conduction line may adopt a half-bridge circuit.
  • the power chips 111 are electrically connected to the first conductive lines arranged on the first substrate 100 , so as to realize parallel connection of a plurality of power chips 111 .
  • the power chip 111 can be directly mounted on the first substrate 100 , that is, the side of the power chip 111 with pins is disposed away from the first substrate 100 .
  • the power chip 111 can be pasted and fixed on the first substrate 100 .
  • the second connection portion 400 may be a flexible printing circuit board (FPC).
  • the second substrate 200 may be a PCB, and the second connection portion 400 is electrically connected to the second substrate 200 , that is, the FPC is electrically connected to the PCB.
  • the power chip 111 can be electrically connected to the second substrate 200 through the wiring on the second connection part 400 , and further realize the electrical connection with the control chip 211 through the wiring on the second substrate 200 .
  • the FPC wiring in this embodiment can realize the symmetrical distribution of the lines, and is not limited to the wiring along a straight line. Therefore, the equidistant connection between the second connection part 400 and each power chip 111 can be realized, and multiple wirings can be optimized.
  • the parallel circuit arrangement of the power chips 111 achieves a high degree of symmetry of the layout.
  • the FPC can be made into a regular plate-like structure, it is not only beneficial to connect the control unit 210 and the power unit 110 with a short circuit to achieve the purpose of reducing parasitic inductance, but also reduce the risk of line collapse. .
  • the second connection portion 400 may be a single-layer board structure or a stacked multi-layer board structure, which may be specifically designed according to the number of lines to be arranged, which is not limited in this application.
  • the base material of the second connection portion 400 can be made of resin or polyimide (PI) material.
  • the second connection portion 400 may be an integral piece of FPC, or may include multiple pieces of FPC, which may be specifically designed according to the internal layout of the package structure, which is also not limited in this application.
  • the power chips 111 include eight power chips 111 as an example.
  • the eight power chips 111 may be divided into two groups, each group may include four power chips 111 , and the drains of the two groups of power chips 111 are electrically connected through a half-bridge circuit on the first substrate 100 .
  • the four power chips 111 in each group may be arranged in two rows, and the sources of the power chips 111 in each row are electrically connected through a first connection portion 300 .
  • the gates of the power chips 111 of the same group are then electrically connected to the second conductive lines on the second substrate 200 through the second connection portion 400, so that all the power chips 111 are electrically connected to the control chip 211 and the driving chip 212, and the control chip 211 can control all power chips 111 to complete instructions such as turn-on and turn-off.
  • FIG. 2 shows a schematic diagram of the first surface of the first substrate in the package structure provided by the embodiment of the present application
  • FIG. 3 shows the first surface of the package structure provided by the embodiment of the present application.
  • the first connection portion may adopt the conductive member 310 .
  • the conductive member 310 can connect multiple power chips 111 in parallel to meet the requirements of current on and off and heat dissipation.
  • the shape of the conductive member 310 is firm, the position is stable after connection, and the line collapse or short offset is not easy to occur.
  • the contact resistance of the conductive member 310 is relatively low, which is beneficial to reduce the power consumption of the power part.
  • the conductive member 310 may be in the shape of a multi-arch bridge, and the conductive member 310 may include a plurality of arch structures and connecting portions connected between adjacent arch structures, and the connecting portions may be used to connect with the power chip 111 .
  • solder joints may be provided on the connection portion, so that the conductive member 310 and the pins of the power chip 111 can be electrically connected by soldering.
  • the material of the conductive member 310 is not limited, for example, it may be copper, copper-aluminum alloy, copper-molybdenum alloy, or a material such as aluminum silicon carbide (AlSiC).
  • FIG. 4 shows a schematic diagram of the assembly of the control chip and the second substrate in the package structure provided by the embodiment of the present application.
  • Second conductive lines may be arranged on the second substrate 200 , the second conductive lines may be single-layer or multi-layer wirings, and the wiring circuits may be laid out according to the control unit and its interface mode.
  • the control chip 211 is electrically connected to the second conductive lines arranged on the second substrate 200 .
  • the control chip 211 can be mounted on the second substrate 200 in a flip-chip manner, that is, the side of the control chip 211 with pins is disposed toward the second substrate 200 , and the pins are connected to the second conductors on the second substrate 200 .
  • control chip 211 is installed in a flip-chip manner, which can shorten the wiring line, which can not only reduce signal interference, reduce parasitic parameters, but also shorten the signal delay, thereby ensuring rapid response of the circuit and timely response of the protection function; in addition, This arrangement can also avoid the risk of wire collapse caused by dense wiring, and risks such as offset and short-circuiting of punched wires, and can save wiring space, which is conducive to reducing the size of the second substrate 200 .
  • the driver chip can also be mounted on the second substrate 200 in a flip-chip manner, and the pins of the driver chip are connected to the second substrate 200 on the second substrate 200. Conductive lines are electrically connected.
  • the control chip 211 receives the external input signal and the internal feedback signal. After the signal is processed by the control chip 211, it can be sent to the driver chip through the second conduction line. The driver chip then sends the signal to the driver chip through the second conduction line and the second connection part 400. Power chip 111 .
  • control chip 211 and the driving chip and the second substrate 200 can be electrically connected through the second conductive lines on the second substrate 200, so there is no need to provide additional external connection wires on the second substrate 200, so that the high Product requirements for integration, high reliability, intelligence and miniaturization can also reduce equipment investment costs, improve production efficiency, and product yield from a process perspective.
  • the heat sink 900 can be installed on the side of the control chip 211 facing away from the second substrate 200 , and the heat generated by the control chip 211 during operation can be dissipated to the outside through the heat sink 900 , which is beneficial to ensure the performance and performance of the control chip 211 . service life.
  • the heat sink 900 can also be installed on the side of the driver chip away from the second substrate 200 .
  • the heat sink 900 can be mounted on the back of the control chip 211 or the driver chip by means of sticking.
  • the heat dissipation member 900 may specifically be a heat dissipation patch.
  • the heat dissipation patch can be a graphite sheet or the like.
  • FIG. 5 shows a schematic structural diagram of the first surface of the second substrate in the package structure provided by the embodiment of the present application.
  • a chip seat 220 may also be provided on the second substrate 200 corresponding to the installation positions of the control chip and the driving chip, and the chip seat 220 is disposed on the first surface of the second substrate 200 .
  • the chip holder 220 includes a plurality of bump pins, which are used for docking with the pins of the control chip or the driver chip, so as to facilitate the rapid installation of the control chip and the driver chip.
  • the number of bump pins included in the chip holder 220 and the distribution of the bump pins can be matched according to the mounted chips.
  • FIG. 6 shows a schematic diagram of the connection relationship between the first substrate and the second substrate in the package structure provided by the embodiment of the present application.
  • the second substrate 200 has a first end away from the first substrate 100 , and a first lead portion 700 may be provided in an area of the first surface of the second substrate 200 close to the first end.
  • a lead portion 700 is electrically connected to the second conductive line arranged on the second substrate 200 , and further electrically connected to the control chip 211 and the driver chip.
  • the control chip 211 can receive external control signals through the first lead portion 700 .
  • the second connection portion 400 is connected to the first surface of the second substrate 200 , and is electrically connected to the control chip 211 and the driving chip through the second conduction line.
  • the power chip 111 is mounted on the first surface of the first substrate 100 . It should be noted that the first surface of the first substrate 100 and the first surface of the second substrate 200 are disposed on the same side.
  • the first substrate 100 has a second end away from the second substrate 200 , and a region of the first surface of the second substrate 200 close to the second end may be provided with a second lead part 800 , the second lead part 800 It is electrically connected to the first conduction line arranged on the first substrate 100 , and further electrically connected to the power chip 111 .
  • the lead portion may be a bare copper frame or a spot-plated frame, and the shape of the end portion of the lead portion may be a plane shape or a bent step shape.
  • the second lead portion 800 may be connected to an external power supply battery and an external load.
  • the second lead portion 800 may have three terminals, two of which may be connected to the positive and negative terminals of the battery, respectively, and the other terminal may be used as an output terminal to connect to a load.
  • FIG. 7 is a schematic diagram of the arrangement position of the soldering portion in the package structure provided by the embodiment of the present application.
  • the connection relationship between the second substrate 200 and the first substrate 100 may be stacked.
  • the end of the second substrate 200 close to the first substrate 100 may be stacked on the first substrate 100 .
  • the second substrate 200 and the first substrate 100 may be arranged in parallel.
  • the second substrate 200 and the first substrate 100 can be physically connected by welding, so that the two are structurally integrated.
  • the first welding portion 500 may be provided on the second surface of the second substrate 200
  • the second welding portion 600 may be provided on the first surface of the first substrate 100 .
  • the end of the second substrate 200 close to the first substrate may also be stacked under the second surface of the first substrate 100 .
  • the first welding part 500 is provided on one side, and the second welding part 600 is provided on the second surface of the first substrate 100 .
  • FIG. 8 shows a schematic structural diagram of the soldering portion in the package structure provided by the embodiment of the present application
  • FIG. 9 shows another structure of the soldering portion in the package structure provided by the embodiment of the present application.
  • the first welding portion 500 and the second welding portion may be strip-shaped.
  • each of the first welding portion 500 and the second welding portion may be formed by arranging a plurality of welding blocks.
  • both the first welding part 500 and the second welding part are strip-shaped, or when one of the first welding part 500 and the second welding part is strip-shaped and the other is formed by arranging a plurality of welding blocks,
  • the difficulty of alignment between the first welding part 500 and the second welding part is relatively low.
  • the number of the welding blocks of the first welding part 500 and the second welding part may be the same, and the distance between the adjacent welding blocks It can also be the same, so that the welding blocks of the first welding part 500 and the second welding part are arranged in a one-to-one correspondence, thereby making the connection between the first welding part 500 and the second welding part more reliable.
  • the first substrate 100 and the second substrate 200 are connected to form a whole, which is arranged in the In the casing 000, the signal part and the power part are packaged together by the casing 000.
  • the second side of the first substrate 100 that is, the opposite side of the side of the first substrate 100 on which the power chip 111 is provided, may be completely or partially exposed on the outside of the casing 000 , and the specific implementation means may be on the casing 000 A notch is provided in a region corresponding to the second surface of the first substrate 100 .
  • the backside of the control chip 211 may be completely or partially exposed on the outside of the housing 000 .
  • the heat sink on the backside of the control chip 211 may be completely or partially exposed.
  • a notch may be provided in a region corresponding to the control chip 211 on the casing 000 .
  • the heat sink on the backside of the driver chip may also be completely or partially exposed.
  • a gap may be provided on the housing 000 corresponding to the driver chip area.
  • the above-mentioned notch can be integrally formed when the casing 000 is formed according to a pre-design, or can be formed by removing material according to a specific corresponding area after the casing 000 is formed.
  • first connecting portion 300 and the second connecting portion 400 are enclosed by the casing 000 .
  • the lead portion of the first lead portion 700 connected to the second substrate 200 and the lead portion of the second lead portion 800 connected to the first substrate 100 may also be encapsulated by the housing 000 .
  • the housing 000 may be injection molded or potted by epoxy molding compound (EMC), which has strong high temperature aging resistance and low cost.
  • EMC epoxy molding compound
  • the thermal expansion coefficient of the epoxy plastic encapsulant can be selected to be 9-17x10 -6 /°C. Within this range, it is convenient to control the overall warpage of the package structure, thereby ensuring the flatness and reliability of the package structure installation.
  • the second surface of the first substrate 100 , the back surface of the control chip 211 , and the back surface of the driver chip that are exposed outside the casing 000 can also be mounted with an external heat sink to enhance the overall heat dissipation capability of the package structure.
  • the radiator may be a heat-dissipating metal plate of an air-cooled or water-cooled radiator. It should be noted that the heat sink on the backside of the control chip 211 and the heat sink on the backside of the driver chip may coexist with the above heat sink.
  • FIG. 10 is a schematic diagram illustrating another connection relationship between the first substrate and the second substrate in the package structure provided by the embodiment of the present application.
  • the connection relationship between the second substrate 200 and the first substrate 100 can also be set to be offset.
  • the end face of the second substrate 200 close to the first substrate 100 is in contact with the end face of the first substrate 100 close to the second substrate 200 , so as to realize the connection between the second substrate 200 and the first substrate 100 .
  • the second substrate 200 and the first substrate 100 may be physically connected by welding, so that the two are structurally integrated.
  • a first welding portion can be provided on the end face of the second substrate 200, and a second welding portion can be provided on the end face of the first substrate.
  • the second substrate 200 can be connected to the Fixing of the first substrate 100 .
  • FIG. 11 shows a flowchart of a method for manufacturing a package structure provided by an embodiment of the present application.
  • the manufacturing method of the package structure will be described by taking the package structure shown in FIG. 6 as an example.
  • a plurality of power chips 111 are divided into multiple rows along the first direction and mounted on the first substrate 100.
  • the power chips 111 can be mounted on the first surface of the first substrate 100 in a positive manner; the control chip 211 and the driving chip are mounted On the second substrate 200 , the control chip 211 and the driver chip can be mounted on the first surface of the second substrate 200 by flip-chip. connect.
  • Solder is printed on one end of the first substrate 100 along the first direction, solder is printed on one end of the second substrate 200 along the first direction, and one end of the printed solder on the first substrate 100 is soldered with one end of the printed solder on the second substrate 200, so that The first substrate 100 and the second substrate 200 form an integral body.
  • the first substrate 100 and the second substrate 200 connected as one can be put into a reflow oven for reflow soldering
  • sintered silver used as the solder
  • the first substrate 100 and the second substrate 200 connected as one can be put into a reflow oven for reflow soldering
  • sintered silver used as the solder
  • the substrate 100 and the second substrate 200 are placed in an oven for high temperature baking, so as to enhance the stability of the connection between the first substrate 100 and the second substrate 200 .
  • the solder may also use high thermal conductivity silver paste, electroless nickel/immersion gold (ENIG), nickel plating, gold plating, and the like.
  • the power chips 111 in the same row are electrically connected to each other through the first connection portion 300 .
  • the power chip 111 is electrically connected to the second conductive line on the second substrate 200 by the second connection portion 400 , so as to realize the electrical connection between the power chip 111 and the control chip 211 and the driving chip.
  • An end of the second substrate 200 away from the first substrate 100 is electrically connected to the first lead portion 700
  • an end of the first substrate 100 away from the second substrate 200 is electrically connected to the second lead portion 800 .
  • the first substrate 100 and the second substrate 200 that are connected into one body are plastic-sealed, and the first substrate 100 , the second substrate 200 , the power chip 111 , the control chip 211 and the driver chip, the first connection part 300 and the second connection part 400 , and the lead portion where the first lead portion 700 is connected with the second substrate 200 and the lead portion where the second lead portion 800 is connected with the first substrate 100 are all encapsulated in plastic.
  • the plastic sealing compound can be removed after the plastic sealing is completed to expose the above heat dissipation surfaces.
  • the first substrate 100 and the second substrate 200 that are connected into one body can be put into a plastic sealing mold, and a plastic sealing compound is injected into the plastic sealing mold in a molten state to wrap the above-mentioned parts that need to be plastic-sealed, and then put into the plastic-sealing mold. Bake in the oven to cure, and then remove the excess flash.
  • the above-mentioned manufacturing method may further comprise other steps, such as:
  • the encapsulation structure is preliminarily cleaned. Specifically, water-based solder and pure water can be used for cleaning, or chemical solder and chemical agent can be used for cleaning. After the preliminary cleaning is completed, plasma cleaning can be performed to remove foreign matter on the surface of the plastic-encapsulated structure and increase the adhesion of the plastic-encapsulation.
  • the redundant parts are cut off, and the pins are shaped.
  • Electroplating is performed on the lead portions of the first lead portion 700 and the second lead portion 800 that are exposed outside the molding compound, for example, tin plating may be performed to facilitate subsequent wiring.

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Abstract

本申请公开了一种封装结构、动力电气控制系统及制造方法。封装结构包括第一基板和第二基板。第一基板的第一面设置有功率单元。第二基板的第一面设置有控制单元，第二基板连接在第一基板的一端。控制单元与功率单元电连接，控制单元用于接收外部输入信号及采集内部传感信号，并控制功率单元工作。第二基板的第一面与第一基板的第一面同侧设置。在采用上述结构时，将信号部分与功率部分集成，满足高集成度、智能化的产品需求，另外，功率单元设置在第一基板上，控制单元设置在第二基板上，可以将信号部分与功率部分分开设置，从而能够减小功率部分工作时对信号部分的热干扰，避免信号部分的性能因高温受损而导致失效，提高可靠性，延长使用寿命。

Description

封装结构、动力电气控制系统及制造方法 技术领域
本申请涉及电子产品技术领域，尤其涉及一种封装结构、动力电气控制系统及制造方法。
背景技术
现有的车载逆变器等装置由于产品功率大，散热要求高，这些装置的功率模块大多只包含功率芯片部分，再外接集成电路，集成度和智能化程度较低。该结构形式的功率模块与其他模块之间的电气路径相对较长，信号干扰较多，寄生参数较大，导致延时时间长，容易出现保护不及时的现象，应用于高频时损耗大，振荡严重。并且，功率模块所需电路板的面积也较大，无法满足小型化、高可靠性的产品需求。此外，由于功率模块中集成的芯片较多，芯片上的电极与电路板上的引脚需要通过金属丝线键合连接，导线数量多而密，在功率模块的封装过程中存在塌线、冲线偏移短接等风险，影响功率模块的工作可靠性。
发明内容
本申请提供一种封装结构，以提高封装结构的产品集成度和可靠性。
第一方面，本申请提供了一种封装结构，该封装结构包括第一基板及第二基板；第一基板的第一面设置有功率单元；第二基板的第一面设置有控制单元，第二基板连接在第一基板的一端，控制单元与功率单元电连接，控制单元用于接收外部输入信号及采集内部传感信号，并控制功率单元工作；其中，第二基板的第一面与第一基板的第一面同侧设置。
本申请提供的技术方案，功率单元为功率部分，控制单元为信号部分，功率单元设置在第一基板上，控制单元设置在第二基板上，第二基板与第一基板连接，从而将信号部分与功率部分集成，满足高集成度、智能化的产品需求，另外，功率单元设置在第一基板上，控制单元设置在与第一基板相互独立的第二基板上，可以将信号部分与功率部分分开设置，从而能够减小功率部分工作时对信号部分的热干扰，减轻功率部分所在区域向信号部分所在区域传递热量和温度冲击，避免信号部分的性能因高温受损而导致失效，提高产品可靠性，延长产品使用寿命。
在一个具体的可实施方案中，第一基板上可设置有多排功率单元，每排功率单元包括沿第一方向排列的一个以上功率单元，同一排功率单元可通过第一连接部电连接。功率单元可分成多排设置，每排包括一个以上功率单元，多个功率单元整体上间隔设置，有利于提高功率部分的散热效率。
在具体设置第一连接部时，第一连接部可包括导电件，导电件可为多拱桥状，导电件包括多个拱形结构以及连接在相邻的拱形结构之间的连接部，连接部与功率单元电连接。多拱桥状的导电件将同一排的功率单元并联，相较于采用金属丝线键合的连接方式，导电件形状牢固，连接后位置稳定，不易发生塌线，也不易发生偏移短接，可靠性高，且导电件的接触电阻低，能耗低，此外，导电件的连接及制作工艺简单。
在一个具体的可实施方案中，控制单元通过第二连接部与功率单元电连接，第二连接部可包括至少一个柔性电路板。采用柔性电路板连接控制单元与功率单元，可以使得与功 率单元连接的线路对称分布，优化多个功率芯片并联的线路排布，达到布局的高对称度，并且，柔性电路板能够保证控制单元与功率单元以较短的线路连接，达到降低寄生电感的目的，还能够避免发生塌线。
在一个具体的可实施方案中，第二基板上可布置有导通线路，柔性电路板通过第二基板上的导通线路与控制单元电连接。导通线路的设置便于柔性电路板与第二基板的电连接，也便于控制单元与第二基板的电连接。
在具体设置第二基板与第一基板的位置关系时，第二基板的一端可层叠设置在第一基板的一端。第二基板与第一基板层叠设置，能够减小第二基板与第一基板连接后的总长度，减小封装结构整体在横向维度上的空间占用。
在一个具体的可实施方案中，第二基板的第二面可与第一基板的第一面连接，第二基板的第二面可设置有第一焊接部，第一基板的第一面可设置有第二焊接部，第一焊接部与第二焊接部焊接；或者，第二基板的第一面可与第一基板的第二面连接，第二基板的第一面可设置有第一焊接部，第一基板的第二面可设置有第二焊接部，第一焊接部与第二焊接部焊接。第一焊接部及第二焊接部的设置，使得第二基板与第一基板可采用焊接的方式连接，连接方便、可靠。
除了上述层叠设置第二基板和第一基板的方式以外，还可以采用其他设置方式，例如，第二基板的一端与第一基板的一端可相抵设置。第二基板与第一基板相抵设置，能够减小第二基板与第一基板连接后的总高度，减小封装结构整体在纵向维度上的空间占用。
在一个具体的可实施方案中，第二基板用于与第一基板相抵的一端端面可设置有第一焊接部，第一基板用于与第二基板相抵的一端端面可设置有第二焊接部，第一焊接部与第二焊接部焊接。同样地，第一焊接部及第二焊接部的设置使得第二基板与第一基板的连接方便、可靠。
在具体设置第一焊接部及第二焊接部时，第一焊接部可为条状；或者，第一焊接部可包括并列设置的多个焊接块；或者，第二焊接部可为条状；或者，第二焊接部可包括并列设置的多个焊接块。条状的焊接部之间的对位更容易，且能够使得两个板材的连接更加稳定，成排设置的多个焊接块构成的焊接部能够节省焊接部所用的焊料。焊接部具有两种结构形式，灵活性高，便于根据实际需求进行多样化选择。
在一个具体的可实施方案中，第二基板远离第一基板的一端可设置有第一引线部，第一引线部与控制单元电连接；第一基板远离第二基板的一端可设置有第二引线部，第二引线部与功率单元电连接。引线部的设置，便于封装结构与外部元器件的电连接。
在具体设置第一引线部及第二引线部时，第一引线部远离第二基板的一端可为平面状或台阶状，第二引线部远离第一基板的一端可为平面状或台阶状。引线部具有两种结构形式，灵活性高，便于根据实际需求进行多样化选择。其中，平面状的引线部，连接线路短；台阶状的引线部，便于封装结构与周边元器件在结构上契合，利于封装结构与其他元器件的集成。
在一个具体的可实施方案中，第一基板可为双面具有导电材质的陶瓷基板或钎焊基板。此类板材具有较好的导热性，选作第一基板能够提高功率芯片的散热效率，且本身比较耐热，能够适应高温使用场景，还能够布置电路。
在一个具体的可实施方案中，第二基板可为印制电路板，或者，第二基板可为双面具有导电材质的陶瓷基板或钎焊基板。选用此类板材作为第二基板，便于布置元件之间的导 通线路，也具有较好的导热性，能够适应高温使用场景。
在一个具体的可实施方案中，功率单元可包括功率芯片，功率芯片具有引脚的一面可远离第一基板。功率芯片的具有引脚的一面的反面为其主要散热区域，功率芯片具有引脚的一面远离第一基板，即功率芯片采用正装的安装方式安装在第一基板上，使得功率芯片的主要散热区域与具备高导热性的第一基板直接接触，有利于功率芯片的散热。
在一个具体的可实施方案中，控制单元可包括控制芯片，控制芯片具有引脚的一面可朝向第二基板。也就是说，控制芯片采用倒装的安装方式安装在第二基板上，这种安装方式能够缩短接线线路，减少信号干扰，降低寄生参数，缩短信号延时，确保电路快速反应，保护功能及时响应，还能够避免密集布线带来的塌线，及冲线偏移短接等风险。
此外，为了加快控制芯片的散热速度，控制芯片远离第二基板的一面可设置有散热件。散热件的设置能够提高控制芯片的散热效率，有利于保证控制芯片的性能及使用寿命。
除了上述的控制单元可包括控制芯片以外，控制单元还可包括驱动芯片，驱动芯片具有引脚的一面朝向第二基板。同样地，驱动芯片采用倒装的安装方式安装在第二基板上，能够缩短接线线路，减少信号干扰，降低寄生参数，缩短信号延时，确保电路快速反应，保护功能及时响应，还能够避免密集布线带来的塌线以及冲线偏移短接等风险。
在一个具体的可实施方案中，封装结构还可包括壳体，壳体内部具有容纳空间，第一基板和第二基板位于壳体内。壳体将第一基板、第二基板以及两个基板上的元件包裹在内，能够保护所包裹的元件，稳定元件之间的连接。
在具体设置壳体时，壳体上对应第一基板的第二面的区域处可具有第一缺口；壳体上对应控制单元的区域可具有第二缺口。缺口的设置有利于加快封装结构的局部散热速度。
在一个具体的可实施方案中，第一基板的第二面可设置有第一散热器；控制单元背离第二基板的一面可设置有第二散热器。相似地，散热器的设置有利于加快元件的散热速度。
第二方面，本申请提供了一种动力电气控制系统，包括如前述的封装结构，封装结构用于将电池的直流电转换为交流电以提供给动力装置。动力电气控制系统受控于中央控制系统，如电动汽车的中央控制系统，此外，动力电气控制系统本身也具智能化，工作可靠性高。
第三方面，本申请提供了一种封装结构的制造方法，包括：
将控制单元安装在第二基板的第一面，使控制单元与第二基板上布置的导通线路电连接；
在第二基板的一端设置第一焊接部，在第一基板的一端设置第二焊接部，将第一焊接部与第二焊接部焊接，从而使第二基板和第一基板连接成为一个整体；
通过第二连接部将第一基板上设置的功率单元与第二基板上布置的导通线路电连接，从而使功率单元与控制单元电连接；
对连接成为一个整体的第一基板和第二基板进行塑封。
本申请提供的技术方案，能够实现第二基板与第一基板的连接，将信号部分与功率部分集成，满足高集成度、智能化的产品需求，另外，功率单元设置在第一基板上，控制单元设置在与第一基板相独立的第二基板上，从而使得信号部分与功率部分分开设置，减小功率部分工作时对信号部分的热干扰，减轻功率部分所在区域向信号部分所在区域传递热量和温度冲击，避免信号部分的性能因高温受损而导致失效，所制造的封装结构的集成度高，可靠性高，使用寿命长。
附图说明
图1为本申请实施例提供的封装结构的立体结构示意图；
图2为本申请实施例提供的封装结构中的第一基板的第一面结构示意图；
图3为本申请实施例提供的封装结构中的第一基板的侧视结构示意图；
图4为本申请实施例提供的封装结构中的控制芯片与第二基板的装配示意图；
图5为本申请实施例提供的封装结构中的第二基板的第一面结构示意图；
图6为本申请实施例提供的封装结构中的第一基板与第二基板的连接关系示意图；
图7为本申请实施例提供的封装结构中的焊接部的设置位置示意图；
图8为本申请实施例提供的封装结构中的焊接部的结构示意图；
图9为本申请实施例提供的封装结构中的焊接部的另一结构示意图；
图10为本申请实施例提供的封装结构中的第一基板与第二基板的另一连接关系示意图；
图11为本申请实施例提供的封装结构的制造方法的流程图。
附图标记：
100-第一基板；200-第二基板；300-第一连接部；400-第二连接部；500-第一焊接部；600-第二焊接部；700-第一引线部；800-第二引线部；900-散热件；000-壳体；110-功率单元；210-控制单元；220-芯片座；310-导电件；111-功率芯片；211-控制芯片；212-驱动芯片。
具体实施方式
下面将结合附图，对本申请实施例进行详细描述。
为了方便理解，首先说明本申请实施例涉及的封装结构的应用场景。本申请实施例提供的封装结构可适配于电气控制系统，如车载动力电气控制系统，具体可集成在电动汽车上，示例性地，可作为马达驱动控制器的三相全桥逆变器，将电池的直流电转换为交流电之后提供给马达。现有的功率模块封装结构只具有功率部分，集成度及智能化程度较低。此外，功率部分与电路板之间采用金属丝线键合的电连接方式，一方面，金属丝线本身的线型、线径种类较多，使得生产工艺步骤较多，设备投入较多，不但生产效率较低，且失效率较高；另一方面，由于功率部分中集成的芯片较多，芯片上的电极与电路板上的引脚通过金属丝线键合连接时，所使用的导线数量较多，排布密集，在封装过程中存在塌线、冲线偏移短接等风险。
基于此，本申请实施例提供了一种封装结构，该封装结构可以将信号部分与功率部分一并封装，产品集成度较高；另外，该封装结构中功率部分与信号部分分开设置，从而可以减少功率部分对信号部分的热干扰，提高产品的工作可靠性。
首先参考图1，图1示出了本申请实施例提供的封装结构的立体结构示意图。如图1所示，作为本申请的一个可选实施例，封装结构可以包括第一基板100和第二基板200。第一基板100的第一面设置有多个间隔布置的功率单元110，多个功率单元110可通过第一连接部300电连接，多个功率单元110整体即组成功率模块的功率部分。第二基板200连接在第一基板100的一端，第二基板200的第一面设置有控制单元210，控制单元210与功率单元110可通过第二连接部400电连接，控制单元210即为功率模块的信号部分。
本实施例中，功率单元110设置在第一基板100上，控制单元210设置在第二基板200上，第二基板200与第一基板100连接，从而将信号部分与功率部分集成，满足产品高集成度、智能化的需求。另外，第一基板100与第二基板200相互独立，可以将信号部分与功率部分分开设置，从而能够减小功率部分工作时对信号部分的热干扰，减轻功率部分所在区域向信号部分所在区域传递热量和温度冲击，避免信号部分的性能因高温受损而导致失效，提高产品可靠性，延长产品使用寿命。
其中，多个功率单元110可采用均匀间隔，且对称的空间布局结构。在具体实施时，多个功率单元110可沿第一基板100的一端向另一端的方向布置成多排，排间距可相同，每排功率单元110的数量可以为两个或以上。定义由第一基板100的一端向另一端的方向为第一方向x，多排功率单元110可相对于第一基板100在第一方向上的中线对称分布。同一排的功率单元110可通过一个第一连接部300实现电连接。
在具体实施中，功率单元110可为功率芯片111。功率芯片111可选用金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor，MOSFET)，示例性地，功率芯片111具体可以为硅(Si)、碳化硅(SiC)或氮化镓(GaN)MOSFET。控制单元210可包括控制芯片211，示例性地，控制芯片211可以为专用集成电路(application specific integrited ciurcuit，ASIC)芯片，或数字信号处理(digital signal processing，DSP)芯片。控制单元210还可包括驱动芯片212，此时，第二基板200上可同时设置有控制芯片211和驱动芯片212。当第二基板200上同时设置有控制芯片211和驱动芯片212时，控制芯片211可用于接收外部输入信号，如控制信号，控制信号经过控制芯片211处理后发送至驱动芯片212，驱动芯片212对信号进行放大、隔离、滤波等处理，而后通过第二连接部400发送至功率芯片111，控制多个功率芯片111完成开通和关断等指令。控制芯片211也用于采集功率芯片111的温度信息，第一基板100上的芯片相关附件的温度信息，及功率芯片111的电流信息，并将所采集的初始信息向外发送，或者对所采集的初始信息进行处理、判断后向外发送。
第一基板100可采用双面具有较厚导电材质的高导热性能基板，以适应高温使用场景。示例性地，第一基板100具体可为双面敷铜陶瓷基板(direct bond ceramic，DBC)，双面敷铝陶瓷基板(direct bond aluminum，DBA)，活性金属钎焊(active metal brazing，AMB)的氮化铝(AlN)或氮化硅(Si 3N 4)陶瓷基板，氧化锆补强氧化铝(zirconia toughened alumina，ZTA)双面敷铜陶瓷基板(即ZTA DBC)，等等。第一基板100的表面铜层的厚度可选为0.1～1.2mm，示例性地，表面铜层的厚度可以为0.1mm，1.05mm，1.2mm，等等。示例性地，第二基板200可采用印制电路板(printing circuit board，PCB)。第二基板200也可采用上述的DBC、DBA，或双面镀铜陶瓷基板(direct plating ceramic，DPC)等，相较于第一基板100，第二基板200双面的导电材质的厚度可较薄。
具体实施时，第一基板100上布置有第一导通线路，第一导通线路可采用半桥电路。功率芯片111与第一基板100上所布置的第一导通线路电连接，从而实现多个功率芯片111的并联。功率芯片111可正装于第一基板100，即功率芯片111具有引脚的一面远离第一基板100设置。具体实施时，功率芯片111可粘贴固定于第一基板100。
本实施例中，第二连接部400可采用柔性电路板(flexible printing circuit board，FPC)。承接上述，第二基板200可采用PCB，第二连接部400与第二基板200电连接，即FPC电连接在PCB上。功率芯片111可通过第二连接部400上的布线与第二基板200电连接，进 而通过第二基板200上的布线实现与控制芯片211的电连接。相较于导线连接的方式，本实施例中采用FPC布线可以实现线路的对称分布，不局限于沿直线布线，因此能够实现第二连接部400与各个功率芯片111的等距离连接，优化多个功率芯片111并联的线路排布，达到布局的高对称度。另外，由于FPC可制作为规整的板状结构，这样不仅有利于使控制单元210与功率单元110能够以较短的线路连接，达到降低寄生电感的目的，并且还能够减小发生塌线的风险。
具体实施时，第二连接部400可以为单层板结构，也可以为叠置的多层板结构，具体可以根据布置的线路数量进行设计，本申请对此不作限制。第二连接部400的基材可采用树脂类或聚酰亚胺(polyimide，PI)类材质。另外，第二连接部400可为整体式的一片FPC，也可以包括多片FPC，具体可以根据封装结构内部的布局设计，本申请对此同样不做限制。
结合上述实施例，关于功率芯片111的布置及连接，以功率芯片111包括八个为例进行说明。八个功率芯片111可分成两组，每组可包括四个功率芯片111，两组功率芯片111的漏极通过第一基板100上的半桥电路电连接。此外，每组的四个功率芯片111可排列成两排，每排功率芯片111的源极通过一个第一连接部300电连接。同一组的功率芯片111的门极再通过第二连接部400与第二基板200上的第二导通线路电连接，从而全部的功率芯片111与控制芯片211及驱动芯片212电连接，控制芯片211能够控制全部功率芯片111完成开通和关断等指令。
继续参考图2和图3，图2示出了本申请实施例提供的封装结构中的第一基板的第一面结构示意图，图3示出了本申请实施例提供的封装结构中的第一基板的侧视结构示意图。本申请实施例中，第一连接部可采用导电件310。导电件310可以将多个功率芯片111并联在一起，实现电流通断以及散热的要求。相比于现有技术中功率芯片111与基板之间采用金属丝线键合的电连接方式，在本实施例中，导电件310的形状牢固，连接后位置稳定，不易发生塌线或偏移短接，可靠性较高，且导电件310的安装及制作工艺简单，制作成本也相对较低；另外，导电件310的接触电阻也相对较低，因此有利于降低功率部分的能耗。
具体实施时，导电件310可为多拱桥状，导电件310可包括多个拱形结构以及连接在相邻的拱形结构之间的连接部，连接部可用于与功率芯片111连接。具体设置时，连接部上可设置有焊点，以便于导电件310与功率芯片111的引脚可通过焊接的方式实现电连接。导电件310的材质不限，例如可以为铜、铜铝合金、铜钼合金，或者采用碳化硅铝(AlSiC)等材质。
继续参考图4，图4示出了本申请实施例提供的封装结构中的控制芯片与第二基板的装配示意图。第二基板200上可以布置有第二导通线路，第二导通线路可为单层或多层布线，布线电路可根据控制单元及其接口方式而布局。控制芯片211与第二基板200上所布置的第二导通线路电连接。如4图所示，控制芯片211可采用倒装方式贴片于第二基板200，即控制芯片211具有引脚的一面朝向第二基板200设置，引脚与第二基板200上的第二导通线路电连接。本实施例中，控制芯片211采用倒装方式安装能够缩短接线线路，这样不仅可以减少信号干扰，降低寄生参数，还可以缩短信号延时，从而确保电路快速反应，使保护功能及时响应；另外，这种设置方式还能够避免密集布线带来的塌线，以及冲线偏移短接等风险，并且可以节省布线空间，有利于减小第二基板200的尺寸。
可以理解，当第二基板200上同时设置有控制芯片211和驱动芯片时，驱动芯片也可采用倒装方式贴片于第二基板200，驱动芯片的引脚与第二基板200上的第二导通线路电 连接。控制芯片211接收外部输入信号和内部反馈信号，信号经过控制芯片211处理后可通过第二导通线路发送至驱动芯片，驱动芯片再将信号通过第二导通线路及第二连接部400发送至功率芯片111。
上述方案中，控制芯片211及驱动芯片与第二基板200均可通过第二基板200上的第二导通线路电连接，故第二基板200上无需另外设置外部的连接导线，从而能够满足高集成度、高可靠性、智能化及小型化的产品需求，从工艺角度而言也能够降低设备投入成本，提升生产效率，以及产品良率。
作为一个可选的方案，控制芯片211背离第二基板200的一面可安装散热件900，控制芯片211工作时产生的热量可通过散热件900散发至外部，从而有利于保证控制芯片211的性能及使用寿命。当第二基板200上同时设置有控制芯片211和驱动芯片，驱动芯片背离第二基板200的一面也可安装散热件900。散热件900可采用粘贴的方式安装在控制芯片211或者驱动芯片的背面。散热件900具体可为散热贴片。散热贴片可采用石墨片等。
继续参考图5，图5示出了本申请实施例提供的封装结构中的第二基板的第一面结构示意图。如图5所示，第二基板200上对应控制芯片和驱动芯片的安装位置还可设置有芯片座220，芯片座220设置于第二基板200的第一面。芯片座220包括多个凸点引脚，用于与控制芯片或者驱动芯片的引脚对接，便于控制芯片以及驱动芯片的快速安装。芯片座220所包括的凸点引脚数量，及凸点引脚的分布情况可根据所安装的芯片而匹配设置。
一并参考图6，图6示出了本申请实施例提供的封装结构中的第一基板与第二基板的连接关系示意图。如图6所示，沿第一方向，第二基板200具有远离第一基板100的第一端，第二基板200的第一面靠近第一端的区域可设置有第一引线部700，第一引线部700与第二基板200上所布置的第二导通线路电连接，进而与控制芯片211及驱动芯片电连接，控制芯片211可通过第一引线部700接收外部控制信号。第二连接部400的一端连接在第二基板200的第一面，通过第二导通线路与控制芯片211及驱动芯片电连接。功率芯片111安装在第一基板100的第一面，需要说明的是，第一基板100的第一面与第二基板200的第一面同侧设置。此外，在第一方向上，第一基板100具有远离第二基板200的第二端，第二基板200的第一面靠近第二端的区域可设置有第二引线部800，第二引线部800与第一基板100上所布置的第一导通线路电连接，进而与功率芯片111电连接。
具体实施时，引线部可采用裸铜框架或点镀框架，引线部端部的形状可为平面状，也可为带有折弯的台阶状。
在具体的应用场景中，第二引线部800可与外部电源电池和外部负载连接。具体实施中，第二引线部800可具有三个接线端，其中，两个接线端可分别与电池的正、负极连接，另外一个接线端可作为输出端连接负载。
一并参考图7，图7为本申请实施例提供的封装结构中的焊接部的设置位置示意图。如图7所示，第二基板200与第一基板100的连接关系可为层叠设置，在第一方向上，第二基板200靠近第一基板100的一端可层叠设置在第一基板100的第一面的上方，第二基板200与第一基板100可平行设置。第二基板200与第一基板100可采用焊接方式实现物理连接，使二者在结构上成为一个整体。具体实施时，第二基板200的第二面可设置第一焊接部500，第一基板100的第一面可设置第二焊接部600，通过将第一焊接部500与第二焊接部600焊接即可实现第二基板200与第一基板100的固定。
在其他一些实施例中，第二基板200靠近第一基板的一端也可层叠设置在第一基板100 的第二面的下方，当二者采用焊接方式连接时，可在第二基板200的第一面设置第一焊接部500，以及在第一基板100的第二面设置第二焊接部600。
继续参考图8和图9，图8示出了本申请实施例提供的封装结构中的焊接部的结构示意图，图9示出了本申请实施例提供的封装结构中的焊接部的另一结构示意图。具体实施时，如图8所示，第一焊接部500和第二焊接部可以为条状。或者，如图9所示，第一焊接部500和第二焊接部也可以分别由多个焊接块排列而成。在将第一基板与第二基板200组装时，可使第一焊接部500与第二焊接部位置相对应，进而完成两个板材的焊接。当第一焊接部500和第二焊接部均为条状时，或者当第一焊接部500和第二焊接部中的一者为条形，另一者由多个焊接块排列而成时，第一焊接部500与第二焊接部之间的对位难度相对较低。当第一焊接部500和第二焊接部均由多个焊接块排列而成时，第一焊接部500和第二焊接部的焊接块的数量可以相同，且相邻的焊接块之间的间距也可以相同，以便于第一焊接部500与第二焊接部的焊接块一一对应设置，进而使得第一焊接部500与第二焊接部的连接更加可靠。
结合图6视出的本申请实施例提供的封装结构中的第一基板与第二基板的连接关系示意图，在一个实施例中，第一基板100和第二基板200连接成的整体，设置在壳体000内，通过壳体000实现对信号部分和功率部分的一并封装。其中，第一基板100的第二面，也就是第一基板100的设置有功率芯片111的一面的反面，可全部或部分裸露在壳体000的外侧，具体实现手段可以为在壳体000上对应第一基板100的第二面的区域设置缺口。控制芯片211的背面，也就是控制芯片211的可用于安装散热件的一面，可全部或部分裸露在壳体000的外侧，换言之，控制芯片211背面的散热件可全部或部分裸露，具体地，可在壳体000上的对应控制芯片211的区域设置缺口。同样地，当第二基板200上同时安装有控制芯片211和驱动芯片时，驱动芯片背面的散热件也可全部或部分裸露，具体地，可在壳体000上对应驱动芯片的区域设置缺口。上述缺口可根据预先设计而在壳体000成型时一体成型，也可在壳体000成型后根据具体对应区域而去除材料成型。
承接上述，第一连接部300及第二连接部400被壳体000包裹在内。第一引线部700与第二基板200连接的引脚部分，及第二引线部800的与第一基板100连接的引脚部分，也可被壳体000包裹在内。
具体实施时，壳体000可采用环氧塑封料(epoxy molding compound，EMC)注塑或者灌封成型，该种材质耐高温老化能力强，且成本较低。环氧塑封料的热膨胀系数可选为9～17x10 -6/℃，在该范围内便于控制封装结构的整体翘曲，进而保障封装结构安装的平整度和可靠性。
此外，上述裸露在壳体000的外侧的第一基板100的第二面、控制芯片211的背面、驱动芯片的背面还可安装外部散热器，以增强封装结构整体的散热能力。具体实施时，散热器可为风冷或水冷散热器的散热金属板。需要说明的是，控制芯片211背面的散热件，及驱动芯片背面的散热件，可与上述散热器同时存在。
参考图10，图10示出了本申请实施例提供的封装结构中的第一基板与第二基板的另一连接关系示意图。如图10所示，第二基板200与第一基板100的连接关系也可为相抵设置。具体实施时，在第一方向上，第二基板200靠近第一基板100的一端端面与第一基板100靠近第二基板200的一端端面相抵，从而实现第二基板200与第一基板100的连接。类似地，第二基板200与第一基板100可采用焊接方式实现物理连接，使二者在结构上成 为一个整体。具体实施时，可在第二基板200的端面设置第一焊接部，在第一基板的端面设置第二焊接部，通过将第一焊接部与第二焊接部焊接即可实现第二基板200与第一基板100的固定。
图11示出了本申请实施例提供的封装结构的制造方法的流程图。下面以图6所示的封装结构为例，对该封装结构的制造方法进行说明。
首先，将多个功率芯片111沿第一方向分成多排安装在第一基板100上，功率芯片111可采用正装的方式安装在第一基板100的第一面；将控制芯片211和驱动芯片安装在第二基板200上，控制芯片211和驱动芯片可采用倒装的方式安装在第二基板200的第一面，控制芯片211和驱动芯片通过第二基板200上的第二导通线路实现电连接。
在第一基板100沿第一方向的一端印刷焊料，在第二基板200沿第一方向的一端印刷焊料，将第一基板100印刷焊料的一端与第二基板200印刷焊料的一端焊接，以使第一基板100和第二基板200构成一个整体。
其中，当采用锡膏作为焊料时，可将连接成为一体的第一基板100和第二基板200放入回流炉中进行回流焊接，当采用烧结银作为焊料时，可将连接成为一体的第一基板100和第二基板200放入烤箱中进行高温烘烤，以增强第一基板100和第二基板200连接的稳定性。在其它一些实施例中，焊料还可采用高导热银浆、化学镍金(electroless nickel/immersion gold，ENIG)、镀镍，镀金等。
沿第一方向，将位于同一排的功率芯片111通过第一连接部300相互电连接。
利用第二连接部400将功率芯片111与第二基板200上的第二导通线路电连接，以实现功率芯片111与控制芯片211及驱动芯片的电连接。
在第二基板200远离第一基板100的一端电连接第一引线部700，在第一基板100远离第二基板200的一端电连接第二引线部800。
对连接成为一体的第一基板100和第二基板200进行塑封，将第一基板100、第二基板200、功率芯片111、控制芯片211和驱动芯片，第一连接部300和第二连接部400，以及第一引线部700与第二基板200连接的引脚部分、第二引线部800与第一基板100连接的引脚部分，均塑封在内。对于需要进行散热的部件或区域，如第一基板100的第二面、控制芯片211的背面及驱动芯片的背面所对应的塑封区域，可在塑封完成后去除塑封料，将上述各个散热面外露，从而能够安装外部散热器。具体实施时，可将连接成为一体的第一基板100和第二基板200放入塑封模具中，使用塑封料在熔融状态下注入塑封模具将上述需要塑封在内的部分包裹起来，塑封后放入烤箱中进行烘烤固化，而后对多余的溢料部分进行去除。
此外，上述制造方法还可包括其他步骤，例如：
在塑封完成之后，对封装结构进行初步清洗，具体可采用水基焊料配合纯水清洗，或采用化学焊料配合化学剂清洗。初步清洗完成之后，可再进行等离子清洗，以去除塑封结构表面的异物，增加塑封结合力。
在塑封完成之后，对于暴露在塑封料外部的第一引线部700及第二引线部800的管脚，将多余的部分切除，并对管脚进行引脚成型。
对暴露在塑封料外部的第一引线部700及第二引线部800的引脚部分进行电镀，例如可以镀锡，以便于后续接线。
对产品进行功能测试，将测试合格的产品按要求包装入库。

Claims (16)

  1. 一种封装结构，其特征在于，包括：
    第一基板，所述第一基板的第一面设置有功率单元；
    第二基板，所述第二基板的第一面设置有控制单元，所述第二基板连接在所述第一基板的一端，所述控制单元与所述功率单元电连接，所述控制单元用于接收外部输入信号及采集内部传感信号，并控制所述功率单元工作；其中，所述第二基板的第一面与所述第一基板的第一面同侧设置。
  2. 如权利要求1所述的封装结构，其特征在于，所述第一基板上设置有多排功率单元，每排所述功率单元包括沿第一方向排列的一个以上所述功率单元，同一排所述功率单元通过第一连接部电连接。
  3. 如权利要求2所述的封装结构，其特征在于，所述第一连接部包括导电件，所述导电件为多拱桥状，所述导电件包括多个拱形结构以及连接在相邻的所述拱形结构之间的连接部，所述连接部与所述功率单元电连接。
  4. 如权利要求1～3任一项所述的封装结构，其特征在于，所述控制单元通过第二连接部与所述功率单元电连接，所述第二连接部包括至少一个柔性电路板。
  5. 如权利要求4所述的封装结构，其特征在于，所述第二基板上布置有导通线路，所述柔性电路板通过所述第二基板上的所述导通线路与所述控制单元电连接。
  6. 如权利要求1～5任一项所述的封装结构，其特征在于，所述第二基板的一端层叠设置在所述第一基板的一端。
  7. 如权利要求6所述的封装结构，其特征在于，所述第二基板的第二面与所述第一基板的第一面连接，所述第二基板的第二面设置有第一焊接部，所述第一基板的第一面设置有第二焊接部，所述第一焊接部与所述第二焊接部焊接；
    或者，所述第二基板的第一面与所述第一基板的第二面连接，所述第二基板的第一面设置有第一焊接部，所述第一基板的第二面设置有第二焊接部，所述第一焊接部与所述第二焊接部焊接。
  8. 如权利要求1～5任一项所述的封装结构，其特征在于，所述第二基板的一端与所述第一基板的一端相抵设置。
  9. 如权利要求8所述的封装结构，其特征在于，所述第二基板用于与所述第一基板相抵的一端端面设置有第一焊接部，所述第一基板用于与所述第二基板相抵的一端端面设置有第二焊接部，所述第一焊接部与所述第二焊接部焊接。
  10. 如权利要求1～9任一项所述的封装结构，其特征在于，所述第二基板远离所述第一基板的一端设置有第一引线部，所述第一引线部与所述控制单元电连接；
    所述第一基板远离所述第二基板的一端设置有第二引线部，所述第二引线部与所述功率单元电连接。
  11. 如权利要求1～10任一项所述的封装结构，其特征在于，所述功率单元包括功率芯片，所述功率芯片具有引脚的一面远离所述第一基板。
  12. 如权利要求1～11任一项所述的封装结构，其特征在于，还包括壳体，所述壳体内部具有容纳空间，所述第一基板和所述第二基板位于所述壳体内。
  13. 如权利要求12所述的封装结构，其特征在于，所述壳体上对应所述第一基板的第 二面的区域具有第一缺口；
    所述壳体上对应所述控制单元的区域具有第二缺口。
  14. 如权利要求1～13所述的封装结构，其特征在于，所述第一基板的第二面设置有第一散热器；
    所述控制单元背离所述第二基板的一面设置有第二散热器。
  15. 一种动力电气控制系统，其特征在于，包括如权利要求1～14所述的封装结构，所述封装结构用于将电池的直流电转换为交流电以提供给动力装置。
  16. 一种封装结构的制造方法，其特征在于，包括：
    将控制单元安装在第二基板的第一面，使所述控制单元与所述第二基板上布置的导通线路电连接；
    在所述第二基板的一端设置第一焊接部，在第一基板的一端设置第二焊接部，将所述第一焊接部与所述第二焊接部焊接，使所述第二基板和所述第一基板连接成为一个整体；
    通过第二连接部将所述第一基板上设置的功率单元与所述第二基板上布置的导通线路电连接，以使所述功率单元与所述控制单元电连接；
    对连接成为一个整体的所述第一基板和所述第二基板进行塑封。
PCT/CN2021/076928 2021-02-19 2021-02-19 封装结构、动力电气控制系统及制造方法 WO2022174396A1 (zh)

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