CN113437184A - Preparation method of heterojunction solar cell and heterojunction solar cell - Google Patents
Preparation method of heterojunction solar cell and heterojunction solar cell Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 85
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 22
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 9
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 40
- 210000002381 plasma Anatomy 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cell production, in particular to a preparation method of a heterojunction solar cell and the heterojunction solar cell. A preparation method of a heterojunction solar cell comprises the following steps: forming an intrinsic passivation layer on the front surface and the back surface of the N-type substrate respectively, including: forming a first sub intrinsic passivation layer on the N-type substrate by adopting a radio frequency plasma enhanced chemical vapor deposition process; and forming a second sub intrinsic passivation layer on the first sub intrinsic passivation layer by using a very high frequency plasma enhanced chemical vapor deposition process. According to the preparation method of the heterojunction solar cell, the two intrinsic passivation layers are prepared through the radio frequency plasma enhanced chemical vapor deposition process and the very high frequency plasma enhanced chemical vapor deposition process, so that the epitaxial growth of the intrinsic passivation layers is inhibited, the overall quality of the intrinsic passivation layers is ensured, and the efficiency of the heterojunction solar cell is ensured.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a preparation method of a heterojunction solar cell and the heterojunction solar cell.
Background
With the increasing prominence of global energy problems, solar cell devices are widely popularized on a large scale and widely used in the world as electronic devices capable of directly converting light energy into electric energy through the photovoltaic effect. A heterojunction solar cell, also called HJT cell (Hetero-Junction with intrinsic Thin-layer) or SHJ cell, is a hybrid solar cell made of a crystalline silicon substrate and an amorphous silicon Thin film, has many advantages of simple preparation process, low process temperature, high open-circuit voltage, high photoelectric conversion efficiency, low temperature coefficient, etc., and is one of the most widely used high-efficiency crystalline silicon solar technologies at present. The heterojunction cell comprises a monocrystalline silicon substrate, intrinsic amorphous silicon layers respectively arranged on two opposite end faces of the monocrystalline silicon substrate, a p-type amorphous silicon layer and an n-type amorphous silicon layer respectively arranged on the intrinsic amorphous silicon layers on the two faces, transparent conducting layers (TCO layers) respectively arranged on the p-type amorphous silicon layer and the n-type amorphous silicon layer, and gate electrodes respectively arranged on the transparent conducting layers on the two faces.
The intrinsic amorphous silicon layer is typically prepared using plasma enhanced chemical vapor deposition (PEVCD). The PECVD technology is that under low pressure, low temperature plasma is used to generate glow discharge at the cathode of a process cavity, the glow discharge (or a heating element is additionally added) is used to heat a sample to a preset temperature, then a proper amount of process gas is introduced, and the gas undergoes a series of chemical reactions and plasma reactions to finally form a solid film on the surface of the sample. The performance of a heterojunction solar cell is closely related to the fabrication process.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect that the intrinsic amorphous silicon layer prepared by the existing intrinsic amorphous silicon layer preparation method is not beneficial to the improvement of the efficiency of the heterojunction solar cell.
In order to solve the technical problem, the invention provides a preparation method of a heterojunction solar cell, which comprises the following steps:
forming intrinsic passivation layers on the front surface and the back surface of the N-type substrate respectively;
forming an N-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the front surface of the N-type substrate, and forming a P-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the back surface of the N-type substrate;
forming transparent conductive layers on the N-type amorphous silicon or microcrystalline silicon layer and the P-type amorphous silicon or microcrystalline silicon layer respectively;
forming an electrode on the surface of the transparent conductive layer;
wherein forming an intrinsic passivation layer comprises:
forming a first sub intrinsic passivation layer on the N-type substrate by adopting a radio frequency plasma enhanced chemical vapor deposition process;
and forming a second sub intrinsic passivation layer on the first sub intrinsic passivation layer by using a very high frequency plasma enhanced chemical vapor deposition process.
Forming the first sub intrinsic passivation layer and forming the second sub intrinsic passivation layer are performed in different process chambers.
Before forming the second sub intrinsic passivation layer, further comprising: and pretreating the first sub intrinsic passivation layer by adopting gas plasma to remove the residue of the radio frequency plasma enhanced chemical vapor deposition process environment on the surface of the first sub intrinsic passivation layer.
The process conditions for forming the first sub intrinsic passivation layer are as follows: the radio frequency of the radio frequency power supply is 3kHz-300GHz, the heating time is 80s-120s, the surface temperature of the N-type substrate is 180 ℃ -200 ℃, the flow rate of hydrogen is 15000sccm-20000sccm, the flow rate of silicon hydride is 150sccm-200sccm, the flow rate of doping gas diborane is 10sccm-100sccm, the flow rate of doping gas phosphine is 10sccm-100sccm, the deposition pressure is 0.4torr-0.8torr, the deposition power is 2000W-4000W, and the deposition time is 500s-1000 s.
The process conditions for forming the second sub intrinsic passivation layer are as follows: the very high frequency power supply has the radio frequency of 30MHz-300MHz, the heating time of 80-120 s, the surface temperature of the first sub intrinsic passivation layer of 180-200 ℃, the flow rate of hydrogen of 15000-20000 sccm, the flow rate of silicon hydride of 150-200 sccm, the flow rate of doping gas diborane of 10-100 sccm, the flow rate of doping gas phosphine of 10-100 sccm, the deposition pressure of 0.4-0.8 torr, the deposition power of 2000-4000W and the deposition time of 500-1000 s.
Forming an N-type amorphous silicon or microcrystalline silicon layer, and forming a P-type amorphous silicon or microcrystalline silicon layer, wherein the step of forming the N-type amorphous silicon or microcrystalline silicon layer comprises the following steps: adopting a very high frequency plasma enhanced chemical vapor deposition process to form an N-type amorphous silicon or microcrystalline silicon layer and a P-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer, wherein the process conditions are as follows: the radio frequency of the very high frequency power supply is 30MHz-300MHz, the heating time is 80-120 s, the surface temperature of the second sub intrinsic passivation layer is 180-200 ℃, the flow of hydrogen is 15000-20000 sccm, the flow of silicon hydride is 150-200 sccm, the flow of doping gas diborane is 10-100 sccm, the flow of doping gas phosphine is 10-100 sccm, the deposition pressure is 0.4-0.8 torr, the deposition power is 2000-4000W, and the deposition time is 500-1000 s.
The invention also provides a heterojunction solar cell which is prepared by the preparation method of the heterojunction solar cell and comprises the following steps: an N-type substrate; the first intrinsic passivation layer, the N-type amorphous silicon or microcrystalline silicon layer and the first transparent conducting layer are sequentially arranged on the front surface of the N-type substrate upwards; the second intrinsic passivation layer, the P-type amorphous silicon or microcrystalline silicon layer and the second transparent conducting layer are sequentially arranged on the back surface of the N-type substrate downwards; the first and second intrinsic passivation layers each include: the semiconductor device includes a first sub-intrinsic passivation layer in contact with the N-type substrate, and a second sub-intrinsic passivation layer in contact with the first sub-intrinsic passivation layer.
The thickness of the first sub intrinsic passivation layer is 1nm-5nm, and the thickness of the second sub intrinsic passivation layer is 4nm-7 nm; the thickness ratio of the first sub intrinsic passivation layer to the second sub intrinsic passivation layer is 0.22-0.7.
The first sub intrinsic passivation layer and the second sub intrinsic passivation layer are both intrinsic amorphous silicon passivation layers.
The N-type substrate is an N-type silicon-based substrate.
The technical scheme of the invention has the following advantages:
1. the invention provides a preparation method of a heterojunction solar cell, which comprises the following steps: forming intrinsic passivation layers on the front surface and the back surface of the N-type substrate respectively; forming an N-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the front surface of the N-type substrate, and forming a P-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the back surface of the N-type substrate; forming transparent conductive layers on the N-type amorphous silicon or microcrystalline silicon layer and the P-type amorphous silicon or microcrystalline silicon layer respectively; forming an electrode on the surface of the transparent conductive layer; forming an intrinsic passivation layer on the front surface and the back surface of the N-type substrate respectively, including: forming a first sub intrinsic passivation layer on the N-type substrate by adopting a radio frequency plasma enhanced chemical vapor deposition process; and forming a second sub intrinsic passivation layer on the first sub intrinsic passivation layer by using a very high frequency plasma enhanced chemical vapor deposition process. The two intrinsic passivation layers are prepared by the radio frequency plasma enhanced chemical vapor deposition process and the very high frequency plasma enhanced chemical vapor deposition process, so that the epitaxial growth of the intrinsic passivation layers is inhibited, the film quality of the intrinsic passivation layers is ensured, and the efficiency of the heterojunction solar cell is ensured.
2. The invention provides a preparation method of a heterojunction solar cell, which is characterized in that the step of forming a first sub-intrinsic passivation layer on an N-type substrate by adopting a radio frequency plasma enhanced chemical vapor deposition process and the step of forming a second sub-intrinsic passivation layer on the first sub-intrinsic passivation layer by adopting a very high frequency plasma enhanced chemical vapor deposition process are carried out in different process chambers. The process flow is smoother, equipment parameter adjustment is not needed after the step of growing the first sub intrinsic passivation layer is completed, and the next step is implemented; moreover, if the same chamber is used, the environments in the chamber are different due to different process conditions, the conversion from one environment to another environment requires time, and the growth of the layer body is easily influenced when the environment changes; after the growth of the first sub intrinsic passivation layers on the front surface and the back surface is completed, the first sub intrinsic passivation layers enter different process chambers to perform the growth of the second sub intrinsic passivation layers on the front surface and the back surface, and the risk of cross contamination is reduced.
3. The invention provides a preparation method of a heterojunction solar cell, which is characterized in that before a second sub intrinsic passivation layer is formed on a first sub intrinsic passivation layer by adopting a very high frequency plasma enhanced chemical vapor deposition process, the preparation method also comprises the step of pretreating the first sub intrinsic passivation layer by adopting gas plasma to remove the residue of a radio frequency plasma enhanced chemical vapor deposition process environment on the surface of the first sub intrinsic passivation layer. The interface effect generated when the substrate is transferred between the two chambers is reduced.
4. The invention provides a preparation method of a heterojunction solar cell, which is characterized in that an N-type amorphous silicon or microcrystalline silicon layer is formed on an intrinsic passivation layer on the front surface of an N-type substrate, and a P-type amorphous silicon or microcrystalline silicon layer is formed on an intrinsic passivation layer on the back surface of the N-type substrate. After the growth of the second sub-intrinsic passivation layer is completed, the growth of the N-type amorphous silicon or microcrystalline silicon layer and the growth of the P-type amorphous silicon or microcrystalline silicon layer can be directly performed by using very high frequency plasma enhanced chemical vapor deposition equipment, so that the process is simplified, and the efficiency of the heterojunction solar cell can be improved by the directly grown N-type amorphous silicon or microcrystalline silicon layer and the directly grown P-type amorphous silicon or microcrystalline silicon layer, so that the performance of the heterojunction solar cell is more excellent.
5. The invention provides a heterojunction solar cell which is prepared by adopting the preparation method of the heterojunction solar cell and comprises the following steps: an N-type substrate; the first intrinsic passivation layer, the N-type amorphous silicon or microcrystalline silicon layer and the first transparent conducting layer are sequentially arranged on the front surface of the N-type substrate upwards; the second intrinsic passivation layer, the P-type amorphous silicon or microcrystalline silicon layer and the second transparent conducting layer are sequentially arranged on the back surface of the N-type substrate downwards; the first and second intrinsic passivation layers each include: a first sub-intrinsic passivation layer in contact with the N-type substrate, and a second sub-intrinsic passivation layer in contact with the first sub-intrinsic passivation layer. By preparing the two intrinsic passivation layers, the epitaxial growth of the intrinsic passivation layers is inhibited, the film quality of the intrinsic passivation layers is guaranteed, and the efficiency of the heterojunction solar cell is guaranteed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a heterojunction solar cell according to an embodiment of the present invention.
Fig. 2 is a process flow diagram of a method for fabricating a heterojunction solar cell according to an embodiment of the present invention.
Description of reference numerals:
1. an N-type silicon-based substrate; 2. a first sub-intrinsic amorphous silicon passivation layer; 3. a second sub-intrinsic amorphous silicon passivation layer; 4. an N-type amorphous silicon layer; 5. a P-type amorphous silicon layer; 6. a first transparent conductive layer; 7. a second transparent conductive layer; 8. silver grating electrode.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Plasma enhanced chemical vapor deposition (PEVCD) includes radio frequency enhanced plasma chemical vapor deposition (RF-PECVD) and very high frequency plasma chemical vapor deposition (VHF-PECVD), each of which has advantages and disadvantages. The bombardment energy of plasma generated by RF-PECVD equipment is large, the film growing on the substrate is not easy to generate epitaxy, but the quality of the whole film is poor, and the contribution to the efficiency improvement of the heterojunction solar cell is limited; the prepared film has good quality due to small bombardment energy of plasma generated by the VHF-PECVD equipment, but the prepared film is easy to generate epitaxy on a crystalline silicon substrate and is also not beneficial to improving the efficiency of a heterojunction solar cell. The invention provides an improvement on the preparation process of the heterojunction solar cell on the basis of researching the advantages and the disadvantages of the mode.
This embodiment provides a specific implementation manner of a method for manufacturing a silicon-based heterojunction solar cell, which is used for manufacturing a silicon-based heterojunction solar cell, as shown in fig. 2, and includes the following steps:
in the first process chamber, a radio frequency plasma enhanced chemical vapor deposition process is adopted to generate a first sub intrinsic amorphous silicon passivation layer 2 on the front side and the back side of the cleaned and textured N-type silicon-based substrate 1. Wherein the radio frequency of the radio frequency power supply is 13.56MHz, the heating time is 80-120 s, the surface temperature of the N-type silicon substrate 1 is 190 ℃, the flow rate of hydrogen is 15000-20000 sccm, the flow rate of silicon hydride is 150-200 sccm, the flow rate of doping gas diborane is 10-100 sccm, the flow rate of doping gas phosphine is 10-100 sccm, the deposition pressure is 0.4-0.8 torr, the deposition power is 2000-4000W, and the deposition time is 500-1000 s; the thickness of the first sub intrinsic amorphous silicon passivation layer 2 is 1nm-5 nm.
And introducing gas plasmas such as hydrogen, argon or carbon dioxide to pretreat the first sub intrinsic amorphous silicon passivation layer 2 output from the first process chamber so as to reduce the interface effect generated when the first sub intrinsic amorphous silicon passivation layer 2 is transmitted between the two process chambers.
Forming a second sub intrinsic amorphous silicon passivation layer 3 on the first sub intrinsic amorphous silicon passivation layer 2 in a second process chamber by using a very high frequency plasma enhanced chemical vapor deposition process; wherein the radio frequency of the very high frequency power supply is 40MHz, the heating time is 80-120 s, the surface temperature of the first sub intrinsic amorphous silicon passivation layer 2 is 190 ℃, the flow of hydrogen is 15000-20000 sccm, the flow of silicon hydride is 150-200 sccm, the flow of doping gas diborane is 10-100 sccm, the flow of doping gas phosphine is 10-100 sccm, the deposition pressure is 0.4-0.8 torr, the deposition power is 2000-4000W, and the deposition time is 500-1000 s; the thickness of the second sub-intrinsic amorphous silicon passivation layer 3 is 4nm-7 nm.
In the second process chamber, continuously adopting a very high frequency plasma enhanced chemical vapor deposition process to grow an N-type amorphous silicon layer 4 on the second sub-intrinsic amorphous silicon passivation layer 3 on the front surface, and growing a P-type amorphous silicon layer 5 on the second sub-intrinsic amorphous silicon passivation layer 3 on the back surface; wherein, the radio frequency of the VHF power supply is 30MHz-300MHz, the heating time is 80s-120s, the surface temperature of the intrinsic passivation layer is 190 ℃, the flow rate of hydrogen is 15000sccm-20000sccm, the flow rate of silicon hydride is 150sccm-200sccm, the flow rate of doping gas diborane is 10sccm-100sccm, the flow rate of doping gas phosphine is 10sccm-100sccm, the deposition pressure is 0.4torr-0.8torr, the deposition power is 2000W-4000W, and the deposition time is 500s-1000 s. After the growth of the second sub-intrinsic passivation layer 3 is finished, the growth of the N-type amorphous silicon or microcrystalline silicon layer and the growth of the P-type amorphous silicon or microcrystalline silicon layer are directly carried out by using very high frequency plasma enhanced chemical vapor deposition equipment, so that the process is simplified, and the efficiency of the heterojunction solar cell can be improved by the directly grown N-type amorphous silicon or microcrystalline silicon layer and the directly grown P-type amorphous silicon or microcrystalline silicon layer, so that the performance of the heterojunction solar cell is more excellent; and, first process chamber and second process chamber are automatic aggregate unit, need not artifical the transfer, and have built the clean canopy between first process chamber and the second process chamber to keep the cleanliness factor of environment.
In the PVD process chamber, a physical vapor deposition process is used to deposit a first transparent conductive layer 6 on the N-type amorphous silicon layer 4 and a second transparent conductive layer 7 on the P-type amorphous silicon layer 5. The first transparent conductive layer 6 and the second transparent conductive layer 7 are both transparent oxide conductive layers.
And printing silver paste on the transparent conductive oxide layers on the front surface and the back surface in a screen printing mode, and sintering to form corresponding silver grid line electrodes 8.
In this embodiment, first process chamber and second process chamber are the linkage setting of automatic setting, need not artifical the transfer, and after first process chamber broke the vacuum, the work piece in the first process chamber can automatic conveying to the second process chamber in, and the linkage platform between first process chamber and the second process chamber sets up control environment cleanliness factor through the clean canopy. Specifically, the first process chamber and the second process chamber may be the same or different coating equipment, and process parameters in the coating equipment are respectively set according to the requirement of a required coating.
As shown in fig. 1, this embodiment further provides a specific implementation manner of a heterojunction solar cell, which is prepared by the above method for preparing a heterojunction solar cell, and includes: the N-type silicon-based substrate comprises an N-type silicon-based substrate 1, a first sub intrinsic amorphous silicon passivation layer 2, a second sub intrinsic amorphous silicon passivation layer 3, an N-type amorphous silicon layer 4 and a first transparent conducting layer 6 which are sequentially formed upwards on the front surface of the N-type silicon-based substrate 1, and a first sub intrinsic amorphous silicon passivation layer 2, a second sub intrinsic amorphous silicon passivation layer 3, a P-type amorphous silicon layer 5 and a second transparent conducting layer 7 which are sequentially formed downwards on the back surface of the N-type silicon-based substrate 1, wherein silver grid line electrodes 8 are printed on the first transparent conducting layer 6 and the second transparent conducting layer 7. The thickness of the first sub intrinsic amorphous silicon passivation layer 2 is 1nm-5nm, the thickness of the second sub intrinsic amorphous silicon passivation layer 3 is 4nm-7nm, and the thickness ratio of the first sub intrinsic amorphous silicon passivation layer 2 to the second sub intrinsic amorphous silicon passivation layer 3 is 0.22-0.7.
Two intrinsic amorphous silicon passivation layers are prepared by a radio frequency plasma enhanced chemical vapor deposition process and a very high frequency plasma enhanced chemical vapor deposition process, so that the epitaxial growth at the interface of the intrinsic amorphous silicon passivation layers is inhibited, the overall quality of the intrinsic amorphous silicon passivation layers is ensured, and the efficiency of the heterojunction solar cell is ensured; and after the growth of the second sub intrinsic amorphous silicon passivation layer is finished, the growth of the N-type amorphous silicon layer and the P-type amorphous silicon layer can be directly carried out by using very high frequency plasma enhanced chemical vapor deposition equipment, so that the process is simplified, and the performance of the heterojunction battery is more excellent.
In summary, the absolute conversion efficiency of the heterojunction solar cell prepared by the preparation method of the heterojunction solar cell of the embodiment is improved by about 0.2%.
Alternatively, the RF frequency of the RF power source may be any one of 3kHz to 300GHz and the RF frequency of the VHF power source may be 30MHz to 300 MHz.
As an alternative embodiment, the surface temperature of the N-type silicon-based substrate may be any one of 180 ℃ to 200 ℃, the surface temperature of the first sub-intrinsic amorphous silicon passivation layer is any one of 180 ℃ to 200 ℃, and the surface temperature of the second sub-intrinsic amorphous silicon passivation layer is any one of 180 ℃ to 200 ℃.
As an alternative embodiment, the forming of the first sub intrinsic passivation layer and the forming of the second sub intrinsic passivation layer may be performed in the same chamber, and the process condition for forming the first sub intrinsic passivation layer is first set in the chamber, and after the first sub intrinsic passivation layer is formed, the process condition of the chamber is converted into the process condition required for forming the second sub intrinsic passivation layer, so as to perform the growth of the second sub intrinsic passivation layer.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A preparation method of a heterojunction solar cell is characterized by comprising the following steps:
forming intrinsic passivation layers on the front surface and the back surface of the N-type substrate respectively;
forming an N-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the front surface of the N-type substrate, and forming a P-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer on the back surface of the N-type substrate;
forming transparent conducting layers on the N-type amorphous silicon or microcrystalline silicon layer and the P-type amorphous silicon or microcrystalline silicon layer respectively;
forming an electrode on the surface of the transparent conductive layer;
wherein forming an intrinsic passivation layer comprises:
forming a first sub intrinsic passivation layer on the N-type substrate by adopting a radio frequency plasma enhanced chemical vapor deposition process;
and forming a second sub intrinsic passivation layer on the first sub intrinsic passivation layer by using a very high frequency plasma enhanced chemical vapor deposition process.
2. The method of claim 1, wherein forming the first sub-intrinsic passivation layer and forming the second sub-intrinsic passivation layer are performed in different process chambers.
3. The method of claim 1, further comprising, prior to forming the second sub-intrinsic passivation layer: and pretreating the first sub intrinsic passivation layer by adopting gas plasma to remove the residue of the radio frequency plasma enhanced chemical vapor deposition process environment on the surface of the first sub intrinsic passivation layer.
4. The method according to claim 1, wherein the process conditions for forming the first sub-intrinsic passivation layer are as follows:
the radio frequency of the radio frequency power supply is 3kHz-300GHz, the heating time is 80s-120s, the surface temperature of the N-type substrate is 180 ℃ -200 ℃, the flow of hydrogen is 15000sccm-20000sccm, the flow of silicon hydride is 150sccm-200sccm, the flow of doped diborane is 10sccm-100sccm, the flow of doped phosphine is 10sccm-100sccm, the deposition pressure is 0.4torr-0.8torr, the deposition power is 2000W-4000W, and the deposition time is 500s-1000 s.
5. The method of claim 1, wherein the process conditions for forming the second sub-intrinsic passivation layer are as follows:
the very high frequency power supply has the radio frequency of 30MHz-300MHz, the heating time is 80-120 s, the surface temperature of the first sub intrinsic passivation layer is 180-200 ℃, the flow rate of hydrogen is 15000-20000 sccm, the flow rate of silicon hydride is 150-200 sccm, the flow rate of doping gas diborane is 10-100 sccm, the flow rate of doping gas phosphine is 10-100 sccm, the deposition pressure is 0.4-0.8 torr, the deposition power is 2000-4000W, and the deposition time is 500-1000 s.
6. The method according to claim 1, wherein the step of forming the N-type amorphous silicon or microcrystalline silicon layer and the step of forming the P-type amorphous silicon or microcrystalline silicon layer comprises: forming the N-type amorphous silicon or microcrystalline silicon layer and the P-type amorphous silicon or microcrystalline silicon layer on the intrinsic passivation layer by adopting a very high frequency plasma enhanced chemical vapor deposition process, wherein the process conditions are as follows:
the radio frequency of the very high frequency power supply is 30MHz-300MHz, the heating time is 80s-120s, the surface temperature of the second sub intrinsic passivation layer is 180 ℃ -200 ℃, the flow rate of hydrogen is 15000sccm-20000sccm, the flow rate of silicon hydride is 150sccm-200sccm, the flow rate of doping gas diborane is 10sccm-100sccm, the flow rate of doping gas phosphine is 10sccm-100sccm, the deposition pressure is 0.4torr-0.8torr, the deposition power is 2000W-4000W, and the deposition time is 500s-1000 s.
7. A heterojunction solar cell prepared by the method for preparing a heterojunction solar cell according to any one of claims 1 to 6, comprising: an N-type substrate; the first intrinsic passivation layer, the N-type amorphous silicon or microcrystalline silicon layer and the first transparent conducting layer are sequentially arranged on the front surface of the N-type substrate upwards; the second intrinsic passivation layer, the P-type amorphous silicon or microcrystalline silicon layer and the second transparent conducting layer are sequentially arranged on the back surface of the N-type substrate downwards; the first and second intrinsic passivation layers each include: the semiconductor device includes a first sub-intrinsic passivation layer in contact with the N-type substrate, and a second sub-intrinsic passivation layer in contact with the first sub-intrinsic passivation layer.
8. The heterojunction solar cell of claim 7, wherein the thickness of the first sub-intrinsic passivation layer is 1nm to 5nm, and the thickness of the second sub-intrinsic passivation layer is 4nm to 7 nm; the thickness ratio of the first sub intrinsic passivation layer to the second sub intrinsic passivation layer is 0.22-0.7.
9. The heterojunction solar cell of claim 7, wherein said first sub-intrinsic passivation layer and said second sub-intrinsic passivation layer are intrinsic amorphous silicon passivation layers.
10. The heterojunction solar cell of claim 7, wherein said N-type substrate is an N-type silicon-based substrate.
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| CN117497633A (en) * | 2023-04-12 | 2024-02-02 | 天合光能股份有限公司 | Film preparation method, solar cell, photovoltaic module and photovoltaic system |
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