CN113410365A - Deep ultraviolet LED chip of p-AlGaN epitaxial substrate and preparation method thereof - Google Patents
Deep ultraviolet LED chip of p-AlGaN epitaxial substrate and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 238000000137 annealing Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000001883 metal evaporation Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- 239000003292 glue Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
The invention relates to a p-AlGaN epitaxial substrate deep ultraviolet LED chip and a preparation method thereof, wherein the deep ultraviolet LED chip comprises an LED epitaxial wafer, and an n electrode (203) and a p electrode (208) which are arranged on the LED epitaxial wafer, and is characterized in that the uppermost layer of the LED epitaxial wafer is a p-AlGaN layer (206), a p-type ohmic contact layer (207) is arranged on part of the p-AlGaN layer (206), the p-type ohmic contact layer (207) is made of a tin oxide film, and the p electrode (208) is arranged on the p-type ohmic contact layer (207). The preparation of the tin oxide ohmic contact layer can be efficiently completed, so that the optical power is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip preparation, relates to a deep ultraviolet LED chip and a preparation method thereof, and particularly relates to a deep ultraviolet LED chip with a p-AlGaN epitaxial substrate and a preparation method thereof.
Background
Under the social background condition of water guarantee, mercury lamps face elimination, and the demand of ultraviolet sterilization is continuously promoted under the promotion of new crown blight. Therefore, deep ultraviolet LEDs are becoming an important part of the history stage of sterilization.
At present, the performance of deep ultraviolet LED chips is limited to the problems of low luminous efficiency and high chip voltage. Moreover, most chip manufacturers manufacture the deep ultraviolet LED chips in a flip-chip manner, so that strong absorption of the p-GaN cap layer on the deep ultraviolet light can be avoided, and the deep ultraviolet light can be scattered out through a sapphire substrate surface with small absorption. However, the method is limited by the absorption of deep ultraviolet light by the p-GaN cap layer, and half of the light cannot be emitted. Therefore, another development trend of the new generation of deep ultraviolet LED epitaxial wafer is that the p layer is not made of p-GaN, and the epitaxial cap layer adopts a p-AlGaN layer which absorbs the deep ultraviolet light very weakly, so that the manufactured flip chip can effectively utilize reflection to extract the deep ultraviolet light more fully. Meanwhile, the chip manufacturing direction is changed from a high-cost flip chip to a low-cost front-mounted chip.
However, the difficulty of the epitaxial wafer aiming at the p-AlGaN cap layer at the chip process end is high, and the difficulty is mainly that the ohmic contact layer of the p-AlGaN cap layer is difficult to manufacture. That is, there is no suitable material and no suitable process for fabricating the ohmic contact layer of p-AlGaN.
In view of the technical defects in the prior art, a novel deep ultraviolet LED chip with a p-AlGaN epitaxial substrate and a preparation method thereof are urgently needed to be developed.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a deep ultraviolet LED chip with a p-AlGaN epitaxial substrate and a preparation method thereof, which can efficiently finish the preparation of a tin oxide ohmic contact layer so as to improve the light power.
In order to achieve the above object, the present invention provides a p-AlGaN epitaxial substrate deep ultraviolet LED chip, which includes an LED epitaxial wafer, and an n-electrode and a p-electrode disposed on the LED epitaxial wafer, wherein an uppermost layer of the LED epitaxial wafer is a p-AlGaN layer, and a p-type ohmic contact layer is disposed on a portion of the p-AlGaN layer, the p-type ohmic contact layer is made of a tin oxide thin film, and the p-electrode is disposed on the p-type ohmic contact layer.
Preferably, the LED epitaxial wafer comprises a p-AlGaN layer, a quantum light emitting layer, an n-type semiconductor layer and a substrate in sequence from top to bottom, and the n electrode is disposed on the n-type semiconductor layer.
Preferably, the p-electrode comprises an adhesion layer made of metal Cr or Ti and a high reflection layer made of metal Al, Ag or Rh.
In addition, the invention also provides a preparation method of the deep ultraviolet LED chip with the p-AlGaN epitaxial substrate, which is characterized by comprising the following steps:
(1) providing an LED epitaxial wafer with the uppermost layer being a p-AlGaN layer and depositing an n electrode on the LED epitaxial wafer;
(2) manufacturing a p-electrode pattern on part of the p-AlGaN layer;
(3) depositing a Sn metal layer on the p electrode pattern;
(4) oxidizing the Sn metal layer to form a tin oxide film;
(5) annealing the tin oxide film to form a p-type ohmic contact layer;
(6) and depositing a p electrode on the p-type ohmic contact layer.
Preferably, the step (4) is specifically: placing the LED epitaxial wafer deposited with the Sn metal layer in a chemical vapor deposition furnace or an annealing furnace integrally, and under the temperature condition of 250-400 ℃, pure O2And oxidizing the Sn metal layer in the atmosphere for 0.5-1.5 hours.
Preferably, the annealing treatment in the step (5) is a high temperature annealing treatment, wherein the annealing temperature is 500-700 ℃, and the annealing time is 150-200 s.
Preferably, when the oxidation treatment is performed in the step (4), the temperature is 250 ℃, and the treatment time is 1 hour.
Preferably, the annealing temperature in the step (5) is 500 ℃, and the annealing time is 180 s.
Preferably, the step (3) is specifically: and depositing the Sn metal layer with the thickness of 200nm on the p electrode pattern in a metal evaporation or magnetron sputtering mode.
Preferably, the method for preparing the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate further comprises the step (7): and depositing a passivation layer on the whole LED epitaxial wafer.
Compared with the prior art, the deep ultraviolet LED chip with the p-AlGaN epitaxial substrate and the preparation method thereof have one or more of the following beneficial technical effects:
1. the method adopts a tin oxide material to replace a cap layer p-GaN of the deep ultraviolet epitaxial wafer, directly forms ohmic contact with a p-AlGaN layer, and simultaneously grows a conventional deep ultraviolet electrode material on the tin oxide to finish the chip manufacturing.
2. The manufacturing method of the tin oxide contact layer can efficiently finish the manufacturing process of tin oxide on the chip, the tin oxide manufactured by the process has good ultraviolet transmittance, the extraction rate of the chip to deep ultraviolet light can be effectively increased by utilizing the reflective metal, the light power is 1.5-2 times that of the existing p-GaN cap layer epitaxial wafer, good ohmic contact can be formed, and the voltage can be close to the level of the existing p-GaN cap layer deep ultraviolet epitaxial wafer.
3. The tin oxide ohmic contact layer is manufactured at the end of the chip after the growth of the LED epitaxial wafer is finished in a metal evaporation and oxidation treatment mode, the manufactured tin oxide ohmic contact layer is high in light transmittance, and the reflective metal is formed on the tin oxide ohmic contact layer, so that the light emitting efficiency can be further improved.
Drawings
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED chip of a p-AlGaN epitaxial substrate according to the present invention.
Fig. 2 is a schematic illustration after deposition of a Sn metal layer on a p-AlGaN layer.
Fig. 3 is a schematic view of the Sn metal layer after oxidation and annealing treatment.
Detailed Description
The present invention is further described with reference to the following drawings and examples, which are not intended to limit the scope of the present invention.
The invention relates to a deep ultraviolet LED chip with a p-AlGaN epitaxial substrate and a preparation method thereof.
Fig. 1 shows a schematic structural diagram of a deep ultraviolet LED chip of a p-AlGaN epitaxial substrate of the present invention. As shown in fig. 1, the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate of the present invention includes an LED epitaxial wafer, and an n-electrode 203 and a p-electrode 208 disposed on the LED epitaxial wafer.
In the invention, the uppermost layer of the LED epitaxial wafer is a p-AlGaN layer 206. Therefore, the p layer is not made of p-GaN, and the epitaxial cap layer adopts the p-AlGaN layer which absorbs the deep ultraviolet light very weakly, so that the manufactured LED chip can effectively utilize reflection to extract the deep ultraviolet light more sufficiently.
Preferably, the LED epitaxial wafer comprises a p-AlGaN layer 206, a quantum light emitting layer 204, an n-type semiconductor layer 202 and a substrate 201 from top to bottom in sequence. More preferably, the substrate 201 is a sapphire transparent substrate.
Also, in the present invention, a p-type ohmic contact layer 207 is provided on a portion of the p-AlGaN layer 206 (that is, on a portion for providing a p-electrode). The p-type ohmic contact layer 207 is made of a tin oxide thin film and the p-electrode 208 is disposed on the p-type ohmic contact layer 207.
Because the tin oxide film is adopted to replace the cap layer p-GaN of the deep ultraviolet LED epitaxial wafer and directly form ohmic contact with the p-AlGaN layer, the extraction rate of the chip to deep ultraviolet light can be effectively increased, and the light power is 1.5-2 times that of the existing p-GaN cap layer epitaxial wafer.
Meanwhile, in the present invention, the p-electrode 208 includes a high reflection layer made of metal Al, Ag, or Rh in addition to an adhesion layer made of metal Cr or Ti. Thus, the extraction rate of the chip to the deep ultraviolet light can be effectively increased by utilizing the reflection of the high reflection layer in the p electrode 208.
In addition, in the present invention, the n-electrode 203 is provided on the n-type semiconductor layer 202.
In order to prepare the deep ultraviolet LED chip with the p-AlGaN epitaxial substrate, a specific preparation method is required. The method for preparing the p-AlGaN epitaxial substrate deep ultraviolet LED chip is described in detail below, so that a person skilled in the art can prepare the p-AlGaN epitaxial substrate deep ultraviolet LED chip.
The preparation method of the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate comprises the following steps:
firstly, an LED epitaxial wafer with the p-AlGaN layer 206 as the uppermost layer is provided, and an n electrode 203 is deposited on the LED epitaxial wafer.
In order to prepare a deep ultraviolet LED chip with a p-AlGaN epitaxial substrate, an LED epitaxial wafer needs to be provided firstly. In order to make the p layer not be p-GaN and make the epitaxial cap layer be made of p-AlGaN which has weak absorption to deep ultraviolet light, the uppermost layer of the LED epitaxial wafer needs to be the p-AlGaN layer 206.
Preferably, the LED epitaxial wafer comprises a sapphire transparent substrate 201, and an n-type semiconductor layer 202, a quantum light emitting layer 204 and a p-AlGaN layer 206 which are sequentially grown on the sapphire transparent substrate 201.
Next, an n-electrode 203 needs to be deposited on the provided LED epitaxial wafer. In the invention, the step of depositing the n electrode 203 on the LED epitaxial wafer comprises the following steps:
1. and cleaning the LED epitaxial wafer. HCL and H can be adopted when the LED epitaxial wafer is cleaned202And (5) cleaning. These cleaning processes are prior art and, for simplicity, will not be described in detail herein.
2. And manufacturing an n electrode pattern on the p-AlGaN layer 206 by a photoetching technology, taking the manufactured n electrode pattern as an exposed area to be etched, and coating a mask on other areas.
3. And etching the exposed region to be etched to the surface of the n-type semiconductor layer 202 by adopting a dry etching method, or etching off the n-type semiconductor layer 202 with partial thickness, and then removing the mask.
4. Coating photoresist negative glue on a non-etching area, depositing a metal layer on the etching area by adopting a metal evaporation technology, wherein the deposited metal layer is TiAlTiAu, namely a Ti layer, an Al layer, a Ti layer and an Au layer which are superposed, and then removing the photoresist negative glue and the residual metal layer in the non-electrode area to finish the preparation of the n electrode 203.
5. The n-type electrode 203 has good n-type ohmic contact by annealing the n-type electrode through a high-temperature rapid annealing technology. Among them, a specific high temperature rapid annealing technique belongs to the prior art, and for the sake of simplicity, it is not described in detail herein.
Secondly, a p-electrode pattern is manufactured on part of the p-AlGaN layer 206.
In the present invention, a p-electrode pattern may be formed on a portion of the p-AlGaN layer 206 (on a portion where a p-electrode is provided) by a photolithography technique.
And thirdly, depositing a Sn metal layer 211 on the p electrode image.
In the invention, the manufactured p-electrode pattern is used for exposing the area to be etched, and the other areas are coated with masks. And then, depositing the Sn metal layer 211 on the exposed area to be etched by adopting a metal evaporation or magnetron sputtering technology, and then removing the residual Sn metal layer in the mask and the non-electrode area to finish the preparation of the Sn metal layer 211.
Preferably, the thickness of the Sn metal layer 211 deposited on the p-electrode pattern by metal evaporation or magnetron sputtering is 200 nm. A large number of experimental researches prove that the Sn metal layer with the thickness is optimal and can meet the requirements of light extraction rate and ohmic contact formation.
And fourthly, oxidizing the Sn metal layer 211 to form a tin oxide film.
As shown in fig. 2, a target material Sn is evaporated on a portion of the p-AlGaN layer 206 by a metal evaporation or magnetron sputtering technique. Since the evaporated or sputtered Sn metal layer 211 is opaque, it is also necessary to treat it.
In the present invention, the Sn metal layer 211 is first treated by oxidation treatment to be a tin oxide thin film.
When the oxidation treatment is carried out, the LED epitaxial wafer deposited with the Sn metal layer 211 is preferably placed in a chemical vapor deposition furnace or an annealing furnace in a whole, and pure O is carried out at the temperature of 250-400 DEG C2And oxidizing the Sn metal layer 211 in the atmosphere for 0.5-1.5 hours.
More preferably, the temperature for the oxidation treatment is 250 ℃ and the treatment time is 1 hour.
The conversion of the Sn metal layer into a tin oxide film can be ensured by the above-described preferable oxidation treatment conditions.
And fifthly, annealing the tin oxide film to form the p-type ohmic contact layer 207.
A large number of experimental researches prove that the requirements of light transmission and the like cannot be met only by converting the Sn metal layer into the tin oxide film through the oxidation treatment process. Therefore, in the present invention, the tin oxide film also needs to be annealed.
Preferably, the annealing treatment is a high-temperature annealing treatment, wherein the annealing temperature is 500-700 ℃, and the annealing time is 150-200 s. More preferably, the annealing temperature is 500 ℃ and the annealing time is 180 s.
Through the annealing treatment, the tin oxide film can form good p-type ohmic contact. Meanwhile, as shown in fig. 3, the tin oxide film subjected to the annealing treatment becomes the p-type ohmic contact layer 207, and finally, a light-transmitting state is exhibited. The transmittance of the P-type ohmic contact layer 207 may be maximized by adjusting an annealing process. In the present invention, the above mentioned annealing conditions are the currently optimal conditions, which enable the deep ultraviolet transmittance to reach 70%, and provide the necessary basis for deep ultraviolet reflection.
And sixthly, depositing a p electrode 208 on the p-type ohmic contact layer 207.
Depositing a p-electrode 208 on the p-type ohmic contact layer 207, first, a p-metal electrode pattern is formed on the p-type ohmic contact layer 207 by photolithography.
And then, coating photoresist negative glue on the region outside the p-metal electrode pattern, depositing a metal layer on the p-metal electrode pattern by adopting a metal evaporation technology, and then removing the photoresist negative glue and residual metal in a non-electrode region to finish the preparation of the p-electrode 208.
In the present invention, the metal layer deposited on the p-metal electrode pattern includes a highly reflective metal layer made of metal Al, Ag, Rh, or the like, in addition to the adhesion layer made of metal Cr or Ti. Therefore, the extraction rate of the chip to the deep ultraviolet light can be effectively increased by utilizing the reflection of the high-reflection metal layer, and the optical power of the chip is 1.5-2 times that of the existing p-GaN cap layer epitaxial wafer.
In addition, in order to prepare a more complete deep ultraviolet LED chip with a p-AlGaN epitaxial substrate, the preparation method of the deep ultraviolet LED chip with the p-AlGaN epitaxial substrate according to the present invention may further include the following steps:
and seventhly, depositing a passivation layer 209 on the whole LED epitaxial wafer.
In the present invention, a passivation layer 209 may be deposited on the entire LED epitaxial wafer (including the n-electrode 203, the p-electrode 208, and the exposed p-AlGaN layer and the n-type semiconductor layer) using PECVD (chemical vapor deposition) techniques. Preferably, the passivation layer 209 is a SiO2 thin film. By depositing the passivation layer 209, an effect of insulating and isolating the p-electrode 208 and the n-electrode 203 can be achieved.
Eighthly, respectively depositing an electrode connecting layer and a pad metal layer on the n electrode 203 and the p electrode 208 to prepare an n electrode pad 205 and a p electrode pad 210.
Specifically, first, an n-electrode pad pattern may be formed over the n-electrode 203 and a p-electrode pad pattern may be formed over the p-electrode by a photolithography technique.
Next, the passivation layer on the n-electrode pad pattern and the p-electrode pad pattern may be removed by dry etching or wet etching to expose the n-electrode 203 and the p-electrode 208.
And then, coating photoresist negative glue on the areas outside the n-electrode 203 and the P-electrode 208, depositing an electrode connecting layer and a pad metal layer on the n-electrode 203 and the P-electrode 208 by adopting a metal evaporation method, and then removing the photoresist negative glue and the metal in the non-electrode area to finish the preparation of the P-electrode pad 210 and the n-electrode pad 205.
After the P-electrode pad 210 and the n-electrode pad 205 are prepared, the preparation of the P-AlGaN epitaxial substrate LED chip of the present invention has been substantially completed. Next, the prepared whole wafer may be cut into unit core particles by grinding, polishing, and dicing techniques. And finally, performing photoelectric test on the unit core particles, and completely finishing the preparation of the p-AlGaN epitaxial substrate LED chip after the test is qualified.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and do not limit the protection scope of the present invention. Those skilled in the art can make modifications or equivalent substitutions to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. The utility model provides a deep ultraviolet LED chip of p-AlGaN epitaxial basal body, its includes the LED epitaxial wafer and sets up n electrode (203) and p electrode (208) on the LED epitaxial wafer, its characterized in that, the superiors of LED epitaxial wafer are p-AlGaN layer (206) and part be provided with p type ohmic contact layer (207) on p-AlGaN layer (206), p type ohmic contact layer (207) are made by the tin oxide film just p electrode (208) set up on p type ohmic contact layer (207).
2. The p-AlGaN epitaxial-based deep ultraviolet LED chip according to claim 1, wherein the LED epitaxial wafer comprises a p-AlGaN layer (206), a quantum light emitting layer (204), an n-type semiconductor layer (202) and a substrate (201) in sequence from top to bottom, and the n-electrode (203) is arranged on the n-type semiconductor layer (202).
3. The p-AlGaN epitaxial substrate deep ultraviolet LED chip according to claim 2, wherein the p-electrode (208) comprises an adhesion layer made of metal Cr or Ti and a highly reflective layer made of metal Al, Ag or Rh.
4. A preparation method of a deep ultraviolet LED chip with a p-AlGaN epitaxial substrate is characterized by comprising the following steps:
(1) providing an LED epitaxial wafer with an uppermost layer being a p-AlGaN layer (206) and depositing an n electrode (203) on the LED epitaxial wafer;
(2) manufacturing a p-electrode pattern on part of the p-AlGaN layer (206);
(3) depositing a Sn metal layer (211) on the p electrode pattern;
(4) oxidizing the Sn metal layer (211) to form a tin oxide film;
(5) annealing the tin oxide film to form a p-type ohmic contact layer (207);
(6) and depositing a p electrode (208) on the p-type ohmic contact layer (207).
5. The method for preparing the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate according to claim 4, wherein the step (4) is specifically as follows: the LED epitaxial wafer deposited with the Sn metal layer (211) is integrally placed in a chemical vapor deposition furnace or an annealing furnace, and pure O is carried out at the temperature of 250-400 DEG C2And carrying out oxidation treatment on the Sn metal layer (211) in an atmosphere for 0.5-1.5 hours.
6. The method for preparing the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate according to claim 5, wherein the annealing treatment in the step (5) is a high-temperature annealing treatment, the annealing temperature is 500-700 ℃, and the annealing time is 150-200 s.
7. The method for preparing a deep ultraviolet LED chip of a p-AlGaN epitaxial substrate according to claim 6, wherein the oxidation treatment in the step (4) is performed at a temperature of 250 ℃ for 1 hour.
8. The method for preparing the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate according to claim 7, wherein the annealing temperature in the step (5) is 500 ℃ and the annealing time is 180 s.
9. The method for preparing the deep ultraviolet LED chip of the p-AlGaN epitaxial substrate according to claim 8, wherein the step (3) is specifically as follows: and depositing the Sn metal layer (211) with the thickness of 200nm on the p electrode pattern by a metal evaporation or magnetron sputtering mode.
10. The method for manufacturing a deep ultraviolet LED chip of a p-AlGaN epitaxial substrate according to any of claims 4 to 9, further comprising the step (7): a passivation layer (209) is deposited over the LED epitaxial wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110746841.7A CN113410365B (en) | 2021-07-01 | 2021-07-01 | Deep ultraviolet LED chip of p-AlGaN epitaxial substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110746841.7A CN113410365B (en) | 2021-07-01 | 2021-07-01 | Deep ultraviolet LED chip of p-AlGaN epitaxial substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN116825924A (en) * | 2023-08-24 | 2023-09-29 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED flip chip and preparation method thereof |
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