CN113410164B - Single-chip DAF adhesive tape crystal bonding method - Google Patents
Single-chip DAF adhesive tape crystal bonding method Download PDFInfo
- Publication number
- CN113410164B CN113410164B CN202110663132.2A CN202110663132A CN113410164B CN 113410164 B CN113410164 B CN 113410164B CN 202110663132 A CN202110663132 A CN 202110663132A CN 113410164 B CN113410164 B CN 113410164B
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- Prior art keywords
- chip
- daf
- adhesive tape
- tape
- bonding
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- 239000002390 adhesive tape Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 abstract description 31
- 239000000853 adhesive Substances 0.000 abstract description 16
- 230000001070 adhesive effect Effects 0.000 abstract description 16
- 239000003292 glue Substances 0.000 abstract description 14
- 230000007306 turnover Effects 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000011800 void material Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 23
- 239000010410 layer Substances 0.000 description 9
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002313 adhesive film Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a single-chip DAF adhesive tape crystal bonding method, which belongs to the technical field of semiconductor packaging, and is characterized in that a single chip to be bonded is attached to a pretreated DAF adhesive tape to realize the bonding of the single chip and the DAF adhesive tape, and then the chip and a carrier are tightly bonded through a traditional crystal bonding process. By implementing the invention, the problem that the single chip cannot be adhered with the DAF adhesive tape in advance for bonding the crystal is effectively solved, and the problems of glue overflow, glue turnover, uneven adhesive layer, hollowness and the like which are easy to occur in the single chip crystal bonding process are solved. The method is a new thought and a new method for carrying out single-chip die bonding by using the DAF adhesive tape. The method can control the bottom void ratio to be within 5 percent, the uniformity of the adhesive layer to be 10 percent, the adhesive overflow range to be not more than 20 mu m, and the occurrence of adhesive turnover is avoided for the single chip die bonding.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and relates to a single-chip DAF tape bonding method.
Background
Typical packaging processes for current semiconductor devices include wafer thinning, dicing, die bonding, wire bonding, encapsulation. The traditional chip bonding process mainly comprises two modes, namely, pre-dispensing liquid-state adhesive on a chip carrier, then placing a chip on the liquid-state adhesive, and finally curing the adhesive to fix the chip; another is to use dicing tape (DAF tape) with adhesive layer, after the wafer is thinned, attach it to the back of the wafer to make the separable semi-solid adhesive layer on the DAF tape attach to the chip, after dicing, the single chip has adhesive layer to make the chip attach directly to the chip carrier, and finally fix the chip by curing the adhesive layer.
The first mode has high requirements on the control of the dispensing quantity and the adhesive mounting precision, and can have the problems of glue overflow, glue turnover, uneven glue layers and the like; compared with the first mode, the method changes the gluing mode, replaces the original method of applying the liquid glue on the chip carrier by presetting the semi-solid glue film on the back of the chip, and is particularly suitable for the bonding condition of ultra-thin chips and chip stack packaging. However, the second mode has a limitation requirement on the processing object, and the preset adhesive film can only take a wafer as the processing object, so that the application of the DAF adhesive film die bonding process taking a single chip as the object is limited.
Disclosure of Invention
In order to overcome the defects of glue overflow, glue turnover, uneven glue layers and small application range in the prior art, the invention aims to provide a single-chip DAF adhesive tape crystal bonding method.
In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
a single-chip DAF adhesive tape crystal bonding method comprises the following steps:
step 1) attaching a DAF adhesive tape to a bandage ring;
step 2) attaching the single chip to a DAF adhesive tape, and then heating and pressurizing a tightening piece ring carrying the single chip;
and 3) after the heating and pressurizing in the step 2) are finished, taking down the chip to bond the chip.
Further preferably, the DAF tape attached to the tab ring is cut into small squares.
Preferably, the dice have dimensions of 0.05mm by 0.05mm.
Preferably, after heating and pressurizing, cutting the DAF adhesive tape layer;
the size of the cutting is 0-100 μm larger than the chip size.
Preferably, in step 2), the dicing is performed on a wafer dicing saw.
Preferably, in step 2), the condition parameters of heating and pressurizing are: the temperature is 60-90 ℃; the pressure is 0.1Mpa; the time is 3-10 seconds.
Preferably, in step 3), the chip is removed, in particular by irradiating the back side of the DAF tape with UV light;
the intensity of UV light irradiation is more than 120mW/cm 2 。
Preferably, in step 2), the single chip is attached by using a suction placement device;
the specific operation process is as follows: and sucking the front surface and the back surface of the single chip by using a sucking and placing device, and attaching the single chip on the DAF adhesive tape downwards.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a single-chip DAF adhesive tape crystal bonding method, which is characterized in that a single chip to be bonded is attached to a pretreated DAF adhesive tape to realize the bonding of the single chip and the DAF adhesive tape, and then the chip and a carrier are tightly bonded through a traditional crystal bonding process. By implementing the invention, the problem that the single chip cannot be adhered with the DAF adhesive tape in advance for bonding the crystal is effectively solved, and the problems of glue overflow, glue turnover, uneven adhesive layer, hollowness and the like which are easy to occur in the single chip crystal bonding process are solved. The method is a new thought and a new method for carrying out single-chip die bonding by using the DAF adhesive tape. The method can control the bottom void ratio to be within 5 percent, the uniformity of the adhesive layer to be 10 percent, the adhesive overflow range to be not more than 20 mu m, and the occurrence of adhesive turnover is avoided for the single chip die bonding.
Further, the DAF adhesive tape attached to the bandage ring is cut into a plurality of small squares, and the adhesive layer used for dividing the large blocks is convenient for separating the adhesive layer from the adhesive tape base material.
Further, after heating and pressurizing, the DAF adhesive tape layer is cut, so that the adhesive layer on the back of the chip is separated from the adhesive layers on other positions, and the chip is convenient to take down.
Drawings
FIG. 1 is a schematic illustration of a single-chip adhesive DAF tape of the present invention;
FIG. 2 is a schematic diagram of the working process of embodiment 1 of the present invention;
fig. 3 is a schematic diagram of the working procedure of embodiment 2 of the present invention.
Wherein: 1-DAF tape; a 2-DAF adhesive tape layer; 3-chip.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "comprises" and "comprising," along with any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the attached drawing figures:
example 1
A single-chip DAF adhesive tape crystal bonding method comprises the following steps: as shown in the figure 2 of the drawings,
step 1): the UV photosensitive DAF adhesive tape 1 is attached to the wafer stretching ring, and the DAF adhesive tape attached to the wafer stretching ring is cut into small cubes with the size of 0.05mm multiplied by 0.05mm on a wafer dicing saw.
Step 2): the single chip 3 is sucked by the suction placement device, the back surface is attached to the cut DAF adhesive tape downwards, and the DAF adhesive tape is heated and pressurized for 10 seconds at the temperature of 60 ℃ and the pressure of 0.1Mpa, so that the adhesion between the adhesive layer of the DAF adhesive tape and the chip is enhanced.
Step 3): irradiating UV light from the chip attached on the back of the adhesive tape, wherein the intensity of the UV light irradiation is more than 120mW/cm 2 The adhesive force between the DAF adhesive layer and the adhesive tape base material is reduced, and then the chip is taken down in a conventional coring mode to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip.
Example 2
A single chip DAF tape bonding method, as shown in figure 3, comprises the following steps:
step 1): the UV photosensitive DAF adhesive tape 1 is attached to the bandage ring, the front surface of a single chip is sucked by a suction and placement device, the back surface of the single chip is attached to the DAF adhesive tape downwards, the DAF adhesive tape is heated and pressurized for 3 seconds at the temperature of 90 ℃ and the pressure of 0.1Mpa, and at the moment, the adhesive force between the DAF adhesive tape adhesive layer 2 and the chip 3 is enhanced.
Step 2): the DAF glue layer was diced on a wafer dicing saw to a size 10 μm larger than the chip size.
Step 3): irradiating UV light from the chip attached on the back of the adhesive tape, wherein the intensity of the UV light irradiation is more than 120mW/cm 2 The adhesive force between the DAF adhesive layer and the adhesive tape base material is reduced, and then the chip is taken down in a conventional coring mode to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip.
Example 3
A single chip DAF tape bonding method, as shown in figure 1, comprises the following steps:
step 1): the UV photosensitive DAF adhesive tape 1 is attached to the wafer stretching ring, and the DAF adhesive tape attached to the wafer stretching ring is cut into small cubes with the size of 0.05mm multiplied by 0.05mm on a wafer dicing saw.
Step 2): the single chip 3 is sucked by the suction placement device, the back surface is attached to the cut DAF adhesive tape downwards, the DAF adhesive tape is heated and pressurized for 8 seconds at the temperature of 70 ℃ and the pressure of 0.1Mpa, and at the moment, the adhesion between the adhesive layer of the DAF adhesive tape and the chip is enhanced.
Step 3): irradiating UV light from the chip attached on the back of the adhesive tape, wherein the intensity of the UV light irradiation is more than 120mW/cm 2 The adhesive force between the DAF adhesive layer and the adhesive tape base material is reduced, and then the chip is taken down in a conventional coring mode to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip.
Example 4
A single-chip DAF adhesive tape crystal bonding method comprises the following steps:
step 1): the UV photosensitive DAF adhesive tape 1 is attached to the wafer stretching ring, and the DAF adhesive tape attached to the wafer stretching ring is cut into small cubes with the size of 0.05mm multiplied by 0.05mm on a wafer dicing saw.
Step 2): the single chip 3 is sucked by the suction placement device, the back surface is attached to the cut DAF adhesive tape downwards, and the DAF adhesive tape is heated and pressurized for 5 seconds at the temperature of 80 ℃ and the pressure of 0.1Mpa, so that the adhesion between the adhesive layer of the DAF adhesive tape and the chip is enhanced.
Step 3): irradiating UV light from the chip attached on the back of the adhesive tape, wherein the intensity of the UV light irradiation is more than 120mW/cm 2 The adhesive force between the DAF adhesive layer and the adhesive tape base material is reduced, and then the chip is taken down in a conventional coring mode to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip.
Example 5
A single-chip DAF adhesive tape crystal bonding method comprises the following steps:
step 1): the UV photosensitive DAF adhesive tape 1 is attached to the bandage ring, the front surface of a single chip is sucked by a suction and placement device, the back surface of the single chip is attached to the DAF adhesive tape 1 downwards, the DAF adhesive tape 1 is heated and pressurized for 4 seconds at the temperature of 85 ℃ and the pressure of 0.1Mpa, and at the moment, the adhesive force between the DAF adhesive tape adhesive layer 2 and the chip 3 is enhanced.
Step 2): the DAF glue layer was diced on a wafer dicing saw to a size 100 μm larger than the chip size.
Step 3): irradiating UV light from the chip attached on the back of the adhesive tape, wherein the intensity of the UV light irradiation is more than 120mW/cm 2 The adhesive force between the DAF adhesive layer and the adhesive tape base material is reduced, and then the chip is taken down in a conventional coring mode to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip.
The working principle of the invention is as follows:
firstly, the DAF adhesive tape after the temperature is returned is stuck on the bandage ring, and the process needs to separate the release layer of the DAF adhesive tape from the adhesive tape in advance. In order to be compatible with the existing film sticking equipment, a release film with the same size as the wafer is required to be placed on a workbench of the film sticking equipment so as to prevent the adhesive layer of the DAF adhesive tape from being stuck on the workbench. Then, the back of the single chip is required to be attached to the DAF adhesive layer, and two schemes are adopted for achieving the purpose:
one solution is to cut the DAF tape attached to the dicing ring into dice, typically tens of microns in size, with a wafer dicing machine according to pre-set dimensions. Then, the back of a single chip is downwards attached to the DAF adhesive tape by utilizing a suction and placement device under certain pressure, temperature and time conditions, and then the chip is taken down in different modes (heating and UV irradiation) according to the characteristics of the used DAF adhesive tape to carry out subsequent crystal bonding action, and the adhesive layer of the DAF adhesive tape is transferred to the back of the chip.
The other scheme is that a single chip is attached to a DAF adhesive tape downwards according to certain arrangement back surfaces by utilizing a suction and placement device under certain pressure, temperature and time conditions, then the DAF adhesive tape is cut off on a wafer dicing saw along the edge of the chip according to a size slightly larger than the chip size, and then the chip is taken down in different modes (heating and UV irradiation) according to the characteristics of the used DAF adhesive tape to carry out subsequent crystal bonding actions, and at the moment, the adhesive layer of the DAF adhesive tape is transferred to the back surface of the chip. After the single chip DAF layer is attached, the subsequent crystal bonding process is carried out according to the normal DAF crystal bonding action.
In summary, the invention integrates the traditional wafer dicing process and the wafer DAF rubberizing process, and invents a novel single-chip wafer bonding method of the DAF adhesive tape, which can realize the purpose of bonding films and wafers to a single chip by using the DAF adhesive tape.
The above is only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (7)
1. The single-chip DAF tape crystal bonding method is characterized by comprising the following steps of:
step 1) attaching a DAF adhesive tape to a bandage ring;
step 2) attaching the single chip to a DAF adhesive tape, and then heating and pressurizing a tightening piece ring carrying the single chip; the condition parameters of heating and pressurizing are as follows: the temperature is 60-90 ℃; the pressure is 0.1Mpa; the time is 3 to 10 seconds;
and 3) after the heating and pressurizing in the step 2) are finished, taking down the chip to bond the chip.
2. The method for bonding a single-chip DAF tape according to claim 1, wherein in step 1), the DAF tape attached to the tension ring is cut into a plurality of dice.
3. The single chip DAF tape die attach method of claim 2 wherein in step 1) the dice are 0.05mm x 0.05mm in size.
4. The method for bonding a single-chip DAF adhesive tape according to claim 1, wherein in the step 3), after heating and pressurizing, cutting the DAF adhesive tape layer;
the size of the cutting is 0-100 μm larger than the chip size.
5. The single chip DAF tape bonding method of claim 4, wherein in step 3), the dicing is performed on a wafer dicing saw.
6. The method for die bonding of single-chip DAF tape according to claim 1, wherein in step 3), the chip is removed, in particular the back side of the DAF tape is irradiated with UV light;
the intensity of UV light irradiation is more than 120mW/cm 2 。
7. The single chip DAF tape die attach method of claim 1 wherein in step 2), the individual chips are attached using a pick-and-place device;
the specific operation process is as follows: and sucking the front surface and the back surface of the single chip by using a sucking and placing device, and attaching the single chip on the DAF adhesive tape downwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110663132.2A CN113410164B (en) | 2021-06-15 | 2021-06-15 | Single-chip DAF adhesive tape crystal bonding method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110663132.2A CN113410164B (en) | 2021-06-15 | 2021-06-15 | Single-chip DAF adhesive tape crystal bonding method |
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| CN113410164A CN113410164A (en) | 2021-09-17 |
| CN113410164B true CN113410164B (en) | 2024-04-09 |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03152942A (en) * | 1989-11-09 | 1991-06-28 | Nitto Denko Corp | Dicing and die bonding film |
| JP2005056968A (en) * | 2003-08-01 | 2005-03-03 | Ablestik Japan Co Ltd | Method of manufacturing semiconductor device |
| JP2006203000A (en) * | 2005-01-20 | 2006-08-03 | Sekisui Chem Co Ltd | Adhesive tape for dicing and manufacturing method of semiconductor chip |
| JP2008244356A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Chipping treatment method of semiconductor wafer |
| JP2009033155A (en) * | 2006-12-05 | 2009-02-12 | Furukawa Electric Co Ltd:The | Method for treating semiconductor wafer |
| TW201025434A (en) * | 2008-12-24 | 2010-07-01 | Powertech Technology Inc | Method for manufacturing dies formed with a dielectric layer |
| CN102104021A (en) * | 2009-12-16 | 2011-06-22 | 南茂科技股份有限公司 | Wafer dicing method |
| JP2012156288A (en) * | 2011-01-26 | 2012-08-16 | Showa Denko Kk | Semiconductor chip manufacturing method and semiconductor chip mounting method |
| CN107275284A (en) * | 2017-06-29 | 2017-10-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of preparation method of DAF chips |
| CN108598057A (en) * | 2018-05-11 | 2018-09-28 | 华天科技（昆山）电子有限公司 | The embedment chip packaging method of bottom portion of groove glue spraying |
| CN108695227A (en) * | 2018-06-21 | 2018-10-23 | 上海飞骧电子科技有限公司 | Solve the problems, such as the passive device GaAs method for adhering film and chip of encapsulation excessive glue |
| CN110218528A (en) * | 2019-07-05 | 2019-09-10 | 北京理工大学 | A kind of semiconductor-sealing-purpose UV solidification glue and preparation method thereof |
| WO2019181731A1 (en) * | 2018-03-20 | 2019-09-26 | リンテック株式会社 | Adhesive tape, and method for producing semiconductor device |
| CN111489966A (en) * | 2020-06-15 | 2020-08-04 | 紫光宏茂微电子(上海)有限公司 | Method for cutting wafer |
| CN111755377A (en) * | 2020-06-29 | 2020-10-09 | 西安微电子技术研究所 | Wafer de-bonding method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI255499B (en) * | 2004-05-06 | 2006-05-21 | Mitsui Chemicals Inc | Adhesive film and manufacturing method of semiconductor device using the same |
| TWI236058B (en) * | 2004-08-06 | 2005-07-11 | Touch Micro System Tech | Method of performing double side processes upon a wafer |
| JP2010263041A (en) * | 2009-05-01 | 2010-11-18 | Nitto Denko Corp | Dicing tape with die attach film, and method of manufacturing semiconductor apparatus |
-
2021
- 2021-06-15 CN CN202110663132.2A patent/CN113410164B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03152942A (en) * | 1989-11-09 | 1991-06-28 | Nitto Denko Corp | Dicing and die bonding film |
| JP2005056968A (en) * | 2003-08-01 | 2005-03-03 | Ablestik Japan Co Ltd | Method of manufacturing semiconductor device |
| JP2006203000A (en) * | 2005-01-20 | 2006-08-03 | Sekisui Chem Co Ltd | Adhesive tape for dicing and manufacturing method of semiconductor chip |
| JP2009033155A (en) * | 2006-12-05 | 2009-02-12 | Furukawa Electric Co Ltd:The | Method for treating semiconductor wafer |
| JP2008244356A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Chipping treatment method of semiconductor wafer |
| TW201025434A (en) * | 2008-12-24 | 2010-07-01 | Powertech Technology Inc | Method for manufacturing dies formed with a dielectric layer |
| CN102104021A (en) * | 2009-12-16 | 2011-06-22 | 南茂科技股份有限公司 | Wafer dicing method |
| JP2012156288A (en) * | 2011-01-26 | 2012-08-16 | Showa Denko Kk | Semiconductor chip manufacturing method and semiconductor chip mounting method |
| CN107275284A (en) * | 2017-06-29 | 2017-10-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of preparation method of DAF chips |
| WO2019181731A1 (en) * | 2018-03-20 | 2019-09-26 | リンテック株式会社 | Adhesive tape, and method for producing semiconductor device |
| CN108598057A (en) * | 2018-05-11 | 2018-09-28 | 华天科技（昆山）电子有限公司 | The embedment chip packaging method of bottom portion of groove glue spraying |
| CN108695227A (en) * | 2018-06-21 | 2018-10-23 | 上海飞骧电子科技有限公司 | Solve the problems, such as the passive device GaAs method for adhering film and chip of encapsulation excessive glue |
| CN110218528A (en) * | 2019-07-05 | 2019-09-10 | 北京理工大学 | A kind of semiconductor-sealing-purpose UV solidification glue and preparation method thereof |
| CN111489966A (en) * | 2020-06-15 | 2020-08-04 | 紫光宏茂微电子(上海)有限公司 | Method for cutting wafer |
| CN111755377A (en) * | 2020-06-29 | 2020-10-09 | 西安微电子技术研究所 | Wafer de-bonding method |
Non-Patent Citations (1)
| Title |
|---|
| 电子组装中胶黏剂及其涂覆工艺的选择(待续);史建卫;许愿;王建斌;;电子工艺技术(第05期);正文全文 * |
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| CN113410164A (en) | 2021-09-17 |
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