CN113391396A - Method for improving symmetry of glass-based optical waveguide core by adopting inner barrier layer - Google Patents
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
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Abstract
The invention discloses a method for improving the symmetry of a glass-based optical waveguide core by adopting an inner barrier layer on the back surface of a glass substrate. The method comprises the following steps: placing the glass substrate in a container containing K+Carrying out ion exchange treatment in molten salt, and forming an inner barrier layer with high resistivity in a non-optical waveguide region corresponding to the back surface of the glass substrate; forming a buried ion doped region on the glass substrate with the inner barrier layer on the back surface through ion exchange treatment and electric field assisted ion migration treatment; during the electric field auxiliary migration treatment process, the high-resistivity inner blocking layer on the back of the glass substrate enables the electric field distribution near the ion doped region to present the characteristic of transverse convergence, the transverse broadening tendency of the ion doped region in the glass substrate in the electric field auxiliary ion migration process is suppressed, and the symmetry of the buried ion doped region serving as the optical waveguide core in the glass substrate is improved.
Description
Technical Field
The invention relates to the field of optical devices and integrated optics, in particular to a method for improving the symmetry of a glass-based optical waveguide core by manufacturing an inner barrier layer on the back of a glass substrate.
Background
In 1969, s.e.miller proposed the concept of integrated optics, which was based on the idea of fabricating optical waveguides on the surface of the same substrate (or chip) and then implementing integrated fabrication of various devices such as light sources, couplers, filters, etc. By such integration, miniaturization, weight reduction, stabilization, and high performance of the optical system are achieved.
Integrated optical devices fabricated on glass substrates by ion exchange have received considerable attention from industry and researchers. Glass-based integrated optical waveguide devices based on ion exchange technology have several excellent properties, including: low transmission loss, easy doping of high-concentration rare earth ions, matching with the optical characteristics of the optical fiber, low coupling loss, good environmental stability, easy integration, low cost and the like. In 1972, the first article on ion exchange fabrication of optical waveguides was published, and the initiation of research on glass-based integrated optical devices was marked. Since then, research institutions in various countries have invested a great deal of manpower and financial resources in developing glass-based integrated optical devices. Up to now, integrated optical devices on several glass substrates have been scaled and serialized and successfully used in optical communication, optical interconnection and optical sensing networks and have shown great competitiveness.
The ion exchange technique is commonly used to form a surface ion doped region on the surface of a glass substrate as the core layer of the surface optical waveguide. In the process of forming the ion doped region on the surface of the glass, the ion doped region on the surface of the glass is flat due to the transverse diffusion of the doped ions, so that the mode field distribution of the optical waveguide is asymmetric, and the coupling loss of the optical waveguide and the optical fiber is large; on the other hand, the ion doped region on the glass surface is positioned on the surface of the glass substrate, and the scattering of the optical waveguide at the defect on the glass surface can introduce high transmission loss.
The symmetry of the refractive index distribution of the optical waveguide core layer can be improved by manufacturing the buried optical waveguide, so that the symmetry of the mode field distribution of the optical waveguide can be improved, and the coupling loss of the optical waveguide device and the optical fiber can be reduced. Meanwhile, the core part of the optical waveguide is embedded below the surface of the glass, so that the scattering effect of the optical waveguide caused by the surface defect of the glass can be eliminated, and the transmission loss of the device is reduced. The buried optical waveguide is usually manufactured by adopting an electric field assisted ion migration mode to carry out electric field assisted ion migration on the glass substrate after primary ion exchange.
In fact, the problem of controlling the symmetry of the shape and size of the ion-doped regions in the lateral and longitudinal directions in such ion-exchange waveguides has not yet been fully solved. The reason is that at the electric field assisted ion migration temperature, the ion doped region in the glass is directionally moved towards the inside of the glass substrate under the action of the direct current electric field, and meanwhile, the ion doped region is also laterally diffused, so that the lateral dimension of the ion doped region is also widened. Therefore, to improve the symmetry of the optical waveguide core and obtain an ion-doped region with a cross-sectional dimension matched to the lateral and longitudinal dimensions, it is generally necessary to increase the time for the electric field to assist the migration of ions, but increasing the time for the electric field to assist the migration of ions increases the lateral and longitudinal dimensions of the ion-doped region.
Disclosure of Invention
The invention provides a method for improving the symmetry of a glass-based optical waveguide core part, which aims to solve the technical defects in the existing glass-based buried optical waveguide manufacturing technology.
A method of improving the symmetry of a glass-based optical waveguide core comprising the steps of:
placing the glass substrate in a container containing K+Carrying out ion exchange treatment in molten salt, and forming an inner barrier layer with high resistivity in a non-optical waveguide region corresponding to the back surface of the glass substrate;
forming a buried ion doped region on the glass substrate with the inner barrier layer on the back surface through ion exchange treatment and electric field assisted ion migration treatment;
during the electric field auxiliary migration treatment process, the high-resistivity inner blocking layer on the back of the glass substrate enables the electric field distribution near the ion doped region to present the characteristic of transverse convergence, the transverse broadening tendency of the ion doped region in the glass substrate in the electric field auxiliary ion migration process is suppressed, and the symmetry of the buried ion doped region serving as the optical waveguide core in the glass substrate is improved.
Wherein the glass substrate is placed in a container containing K+The step of carrying out ion exchange treatment in molten salt and forming the inner barrier layer with high resistivity in the non-optical waveguide region corresponding to the back surface of the glass substrate comprises the following steps:
manufacturing an inner barrier layer mask on the front surface of the glass substrate, and manufacturing a strip-shaped inner barrier layer mask on the back surface of the glass substrate;
placing a glass substrate with an inner barrier mask on a substrate containing K+Ion exchange treatment in molten salt to obtain K+Entering a region on the back surface of the glass substrate, which is not covered by the inner blocking layer mask, into the glass substrate, and forming an inner blocking layer with high resistivity in a non-optical waveguide corresponding region on the surface of the back surface of the glass substrate;
and removing the inner barrier layer mask on the surface of the glass substrate with the inner barrier layer to obtain the glass substrate with the inner barrier layer.
Particularly, the central axis of the strip-shaped inner blocking layer mask on the back surface of the glass substrate is superposed with the central line of the planned optical waveguide on the surface of the glass substrate.
In particular, the width of the strip-shaped inner barrier mask on the back surface of the glass substrate is smaller than the width of the optical waveguide core planned on the surface of the glass substrate.
In particular, firstly, the front and the back of the glass substrate are manufactured with thin films by deposition techniques such as evaporation or sputtering, and the thin films are processed by photoetching and corrosion (or etching) methods to form an inner barrier layer mask with the position and the width meeting the requirements.
Particularly, the inner blocking layer mask is made of metal materials such as Al, Cr-Au and the like with the thickness of submicron order of magnitude or SiO2And the like dielectric materials.
The step of forming the buried ion doped region on the glass substrate with the inner barrier layer on the back surface through ion exchange treatment and electric field assisted migration treatment comprises the following steps of:
manufacturing an optical waveguide mask containing an ion exchange window on the surface of the glass substrate with the inner barrier layer;
placing the glass substrate with the inner blocking layer on the back surface and the optical waveguide mask in a fused salt containing doped ions for ion exchange treatment, so that the doped ions in the fused salt containing the doped ions form a surface ion doped region on the surface of the glass substrate through diffusion;
removing the optical waveguide mask on the surface of the glass substrate on which the surface ion doped region is formed;
and carrying out electric field auxiliary migration treatment on the glass substrate with the inner barrier layer and the surface ion doped region, so that the surface ion doped region on the surface of the glass substrate is pushed inwards under the action of a direct current electric field to form a buried ion doped region.
In particular, the central axis of the ion exchange window of the optical waveguide mask coincides with the central axis of the position where the optical waveguide is planned to be fabricated on the surface of the glass substrate.
In particular, a film is firstly manufactured on the front surface of a glass substrate by adopting a deposition technology such as evaporation or sputtering, and the like, and the film is processed by adopting a photoetching and corrosion (or etching) method to form the optical waveguide mask containing the ion exchange window.
Particularly, the optical waveguide mask is made of metal materials such as Al, Cr-Au and the like with the thickness of submicron order, or SiO2Isoelectric pointA dielectric material.
The step of carrying out electric field assisted migration treatment on the glass substrate with the inner barrier layer and the surface ion doped region comprises the following steps:
respectively placing fused salt without doping ions on two sides of the glass substrate with the inner barrier layer and the surface ion doping region, and heating and melting the fused salt;
respectively inserting electrode leads into the fused salt without the doped ions, wherein the electrode lead on one side where the surface ion doped region is located is connected with a power supply anode, and the other side is connected with a power supply cathode;
and starting a power supply, and carrying out electric field auxiliary migration treatment on the glass substrate with the inner blocking layer and the surface ion doped region, so that the surface ion doped region on the surface of the glass substrate is pushed inwards under the action of the direct current electric field to form a buried ion doped region.
Wherein the doped ions are Ag+、Tl+Or Cs+。
In particular, the material of the glass substrate is silicate glass, borosilicate glass, phosphate glass or borate glass.
The invention has the advantages and beneficial technical effects as follows:
the method for improving the symmetry of the glass-based optical waveguide core part comprises the steps of forming an inner blocking layer with high resistivity on the back surface of a glass substrate, forming the inner blocking layer with high resistivity in a non-optical waveguide area corresponding to the back surface of the glass substrate in the process of carrying out electric field assisted ion migration treatment, enabling electric field distribution near an ion doping area to show the characteristic of transverse convergence by the inner blocking layer with high resistivity on the back surface of the glass substrate, inhibiting the transverse broadening tendency of the ion doping area in the glass substrate in the process of electric field assisted ion migration, and improving the symmetry of a buried ion doping area serving as the optical waveguide core part in the glass substrate.
Drawings
FIG. 1 is a flow chart of the present invention for making a glass-based optical waveguide;
FIG. 2 is a schematic view of a process for forming an inner barrier on the back side of a glass substrate;
FIG. 3 is a schematic illustration of the fabrication of a surface optical waveguide on the surface of a glass substrate with an internal barrier layer;
fig. 4 is a schematic diagram of a buried optical waveguide fabricated on a glass substrate with an internal barrier on the back side using electric field assisted ion mobility.
Description of reference numerals: 1. a glass substrate; 2. an optical waveguide mask; 3. a molten salt containing a dopant ion; 4. a surface ion doped region; 5. a fused salt free of dopant ions; 6. an electrode lead; 7. a buried ion doped region; 8. an inner barrier layer mask; 9. containing K+Melting a salt; 10. an inner barrier layer.
Detailed Description
The present invention is further illustrated in the accompanying drawings and described in the following detailed description, but the invention is not limited thereto, and modifications can be made by those skilled in the art in the light of the principles of the present invention, and therefore, it should be understood that various modifications and changes can be made in the principles of the present invention within the scope of the present invention.
The flow of manufacturing the glass-based optical waveguide by adopting the method for improving the core symmetry of the glass-based optical waveguide is shown in figure 1, and the main steps are as follows:
(A) making an inner barrier mask 8
Adopting deposition techniques such as evaporation or sputtering to manufacture thin films (metal materials such as Al, Cr-Au, etc. with the thickness of submicron order or SiO) on the front surface and the back surface of the glass substrate 12An electric medium material) and processes the film by adopting photoetching and corrosion (or etching) methods, and a strip-shaped inner blocking layer mask 8 is formed on the back surface of the glass substrate 1. For the manufacture of the strip-shaped optical waveguide, the central axis of the strip-shaped inner barrier layer mask 8 coincides with the central axis of the position where the optical waveguide is planned to be manufactured on the surface of the glass substrate 1, and the width thereof is smaller than the width of the core part of the optical waveguide planned to be manufactured on the surface of the glass substrate 1 (see fig. 2, 3 and 4).
(B) The inner barrier layer 10 is manufactured on the back of the glass substrate 1 by adopting the ion exchange technology
Placing the glass substrate 1 with the inner barrier mask 8 into a chamber containing K+Ion exchange in molten salt 9 (see FIG. 2)Shown), the ion exchange temperature is 330-450 ℃, and the ion exchange time is determined according to the design requirement and is within the range of 30 min-24 h; k in molten salts+With Na in the glass substrate 1+Exchange (K)+From the molten salt into the glass substrate (1), Na+From the glass substrate 1 into the molten salt), K into the glass substrate 1+K is formed in the non-optical waveguide corresponding region layer on the back surface of the glass substrate 1 by thermal diffusion+The diffusion layer serves as an inner barrier layer 10.
(C) Removing the inner barrier mask 8
And removing the inner barrier layer mask 8 by adopting a chemical corrosion process.
(D) Fabrication of optical waveguide mask 2
A thin film (metal material such as Al, Cr-Au, etc. with the thickness of micron or submicron order, or SiO) is manufactured on the surface of the glass substrate 1 by adopting deposition technology such as evaporation or sputtering, etc2Or dielectric material) is etched and etched (or etched) to form an ion exchange window (see fig. 3) to form the optical waveguide mask 2.
(E) Forming a surface ion doped region (4) on the surface of the glass substrate 1 by ion exchange technology
Putting the glass substrate 1 with the optical waveguide mask 2 into a fused salt 3 containing doped ions for ion exchange (shown in figure 3), wherein the ion exchange temperature is 230-400 ℃, and the ion exchange time is determined according to the design requirement and is within the range of 5 min-24 h; the doped ions in the molten salt form an ion doped region 4 of the glass surface in the glass substrate 1 by thermal diffusion, which serves as the core of the surface optical waveguide.
(F) Removing the optical waveguide mask 2
The optical waveguide mask 2 is removed by a chemical etching process.
(G) Formation of buried ion doped region 7 using electric field assisted ion mobility
The method comprises the steps of respectively placing fused salt 5 which does not contain doped ions on two sides of a glass substrate 1 with an inner barrier layer 10 and a surface ion doped region 4 on the back surface, heating and melting the fused salt by adopting the fused salt 5 which does not contain doped ions as an electrode, applying direct current bias on two sides of the glass substrate 1 at 280-400 ℃, enabling an electrode lead 6 on one side of the ion doped region 4 on the surface of the glass to be connected with a positive electrode of a direct current power supply to carry out electric field assisted ion migration (shown in figure 4), and pushing the ion doped region 4 on the surface of the glass formed by primary ion exchange into the glass substrate 1 under the action of the direct current bias to form a buried ion doped region 7 serving as a core part of a buried optical waveguide. The diffusion time is determined according to the required buried depth.
Examples buried multimode optical waveguides (core diameter 45-80 microns) were fabricated.
(A) Selecting a glass substrate 1 made of silicate soda-lime glass material with the thickness of 1.2mm, evaporating a layer of Al with the thickness of 80-120 nm on the front surface and the back surface of the glass substrate 1 to be used as an inner barrier layer mask 8, reserving the inner barrier layer mask 8 on the front surface of the glass substrate 1 through photoetching and wet etching (or etching) processes, and forming a strip-shaped inner barrier layer mask 8 with the width of 3-20 mu m on the back surface of the glass substrate 1. The central axis of the strip-shaped inner barrier layer mask 8 coincides with the central line of the position where the optical waveguide is planned to be manufactured on the surface of the glass substrate 1.
(B) Putting the glass substrate 1 into KNO3Ion exchange is carried out in the fused salt, the ion exchange temperature is 360-400 ℃, the ion exchange time is 60min-4h, and K in the fused salt+Forming K on the back surface of the glass substrate 1 in the region not covered by the strip-shaped inner barrier layer mask 8 by thermal diffusion+The diffusion layer serves as an inner barrier layer 10.
(C) And removing the inner barrier layer mask 8 on the surface of the glass substrate 1 by adopting an etching method.
(D) Evaporating a layer of Al with the thickness of 80-120 nm on the surface of a glass substrate 1, manufacturing a strip-shaped ion exchange window with the width of 25-30 mu m on a film through photoetching and wet etching processes, and forming an optical waveguide mask 2
(E) Placing a glass substrate 1 with a mask 2 for optical waveguide fabrication in NaNO3、Ca(NO3)2And AgNO3Mixed molten salt of (NaNO)3、Ca(NO3)2And AgNO3The molar ratio of the three components is 50:50:1), ion exchange is carried out at the ion exchange temperature of 260-320 ℃, and the ion exchange time is 30-60min, doped ion Ag in molten salt+An ion-doped region 4 of the glass surface is formed in the glass substrate 1 by thermal diffusion.
(F) The optical waveguide mask 2 on the surface of the glass substrate 1 is removed by an etching method.
(G) Using NaNO3And Ca (NO)3)2Mixed molten salt of (NaNO)3And Ca (NO)3)2The molar ratio of the two components is 50:50) as an electrode, the molten salt is heated and melted, and a direct current bias is applied to both sides of the glass substrate (1) (a positive voltage is applied to the side of the glass substrate 1 having the waveguide) to perform electric field assisted ion migration. The temperature of the high-temperature furnace is kept at 240 ℃ and 300 ℃, and the migration time is 1-5 h.
And finishing the manufacture of the buried multimode optical waveguide.
Claims (8)
1. A method for improving the symmetry of a glass-based optical waveguide core using an inner barrier, comprising the steps of:
placing the glass substrate in a container containing K+Carrying out ion exchange treatment in molten salt, and forming an inner barrier layer with high resistivity in a non-optical waveguide region corresponding to the back surface of the glass substrate;
forming a buried ion doped region on the glass substrate with the inner barrier layer on the back surface through ion exchange treatment and electric field assisted ion migration treatment;
during the electric field assisted ion migration treatment process, the high-resistivity inner blocking layer on the back of the glass substrate enables the electric field distribution near the ion doped region to present the characteristic of transverse convergence, the transverse broadening tendency of the ion doped region in the glass substrate in the electric field assisted ion migration process is suppressed, and the symmetry of the buried ion doped region serving as the optical waveguide core in the glass substrate is improved.
2. The method of claim 1 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the glass substrate is made of silicate glass, borosilicate glass, phosphate glass or borate glass.
3. The method of claim 1 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the doped ion is Ag+、Tl+Or Cs+。
4. The method of claim 1 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein:
placing the glass substrate in a container containing K+The step of carrying out ion exchange treatment in molten salt and forming the inner barrier layer with high resistivity in the non-optical waveguide region corresponding to the back surface of the glass substrate comprises the following steps:
manufacturing an inner barrier layer mask on the front surface of the glass substrate, and manufacturing a strip-shaped inner barrier layer mask on the back surface of the glass substrate;
placing a glass substrate with an inner barrier mask on a substrate containing K+Ion exchange treatment in molten salt to obtain K+Entering a region on the back surface of the glass substrate, which is not covered by the inner blocking layer mask, into the glass substrate, and forming an inner blocking layer with high resistivity in a non-optical waveguide corresponding region on the surface of the back surface of the glass substrate;
and removing the inner barrier layer mask on the surface of the glass substrate with the inner barrier layer to obtain the glass substrate with the inner barrier layer.
5. The method of claim 4 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the central axis of the strip-shaped inner blocking layer mask on the back surface of the glass substrate is superposed with the central line of the planned optical waveguide on the surface of the glass substrate.
6. The method of claim 4 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the width of the strip-shaped inner barrier layer mask on the back surface of the glass substrate is smaller than the width of the optical waveguide core planned on the surface of the glass substrate.
7. The method of claim 1, wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the step of forming the buried ion doped region on the glass substrate with the inner barrier layer on the back surface through ion exchange treatment and electric field assisted migration treatment comprises the following steps:
manufacturing an optical waveguide mask containing an ion exchange window on the surface of the glass substrate with the inner barrier layer on the back surface;
placing the glass substrate with the inner blocking layer on the back surface and the optical waveguide mask in a fused salt containing doped ions for ion exchange treatment, so that the doped ions in the fused salt containing the doped ions form a surface ion doped region on the surface of the glass substrate through diffusion;
removing the optical waveguide mask on the surface of the glass substrate on which the surface ion doped region is formed;
and carrying out electric field auxiliary migration treatment on the glass substrate with the inner barrier layer and the surface ion doped region, so that the surface ion doped region on the surface of the glass substrate is pushed inwards under the action of a direct current electric field to form a buried ion doped region.
8. The method of claim 7 wherein the inner barrier layer is used to improve the symmetry of the core of the glass-based optical waveguide, and wherein: the central axis of the ion exchange window of the optical waveguide mask is superposed with the central line of the position of the optical waveguide planned on the surface of the glass substrate.
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