CN102193146B - Method for manufacturing glass substrate all buried strip-type optical waveguide stack - Google Patents
Method for manufacturing glass substrate all buried strip-type optical waveguide stack Download PDFInfo
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- CN102193146B CN102193146B CN2011101410512A CN201110141051A CN102193146B CN 102193146 B CN102193146 B CN 102193146B CN 2011101410512 A CN2011101410512 A CN 2011101410512A CN 201110141051 A CN201110141051 A CN 201110141051A CN 102193146 B CN102193146 B CN 102193146B
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Abstract
The invention discloses a method for manufacturing glass substrate all buried strip-type optical waveguide stack. The glass substrate all buried strip-type optical waveguide stack is formed by manufacturing a plurality of layers of buried optical waveguides on a glass substrate in sequence through an ion exchange and electric field assisted ion diffusion technology. The strip-type optical waveguide stack which is manufactured by the method has the characteristics of simple and mature process, simple integration and low loss; and the shape of a core part of the obtained optical waveguide is symmetrical.
Description
Technical field
The present invention relates to the method for making of the full buried type strip optical waveguide of a kind of glass-based storehouse.
Background technology
The basic thought of integrated optics is on the surface of same substrate, with the slightly high material optical waveguide of refractive index, and makes various devices such as light source, grating based on this again.Through this integrated, can realize miniaturization, lightweight, stabilization and the high performance of optical system.Since integrated optics technique proposes, improved integrated level, reduced size of devices and just become the target that researchers make great efforts.Through making strip optical waveguide storehouse realization three-dimensional integrated is the effective way that improves integrated level.Glass has advantage at aspects such as price, optical loss, light polarization correlativitys.At present, on glass material, realize the focus that the three-dimensional integrated people of being study.
At present, people's method that the employing femto-second laser pulse has directly been write on quartz glass substrate has realized the making of full buried type strip optical waveguide storehouse.It is as shown in Figure 1 that femto-second laser pulse is directly write the scheme of full buried type strip optical waveguide storehouse.Femto-second laser pulse 1 focuses in the glass substrate 3 through object lens 2, and near the glass refraction object lens 2 focuses can nonvolatil increase.Through moving of XYZ three-dimensional platform 4, realize that the three-dimensional of glass substrate 3 moves, can produce the optical waveguide 5 that needs.This method can be made the very big strip optical waveguide storehouse of the degree of depth.But there are two major defects in this optical waveguide: one of which, the existence of optical system spherical aberration have increased the size of optical waveguide 5 cores and have made its out-of-shape, do not match with fiber core, thus increased optical transmission loss and with the coupling loss of optical fiber; Its two, the strip optical waveguide that this method is made can only write one by one, manufacturing speed is restricted, and the costing an arm and a leg of femto-second laser, the cost of manufacture of optical device is higher.
Except that the femto-second laser pulse direct writing technology, ion exchange technique has very big potentiality aspect the full buried type strip optical waveguide storehouse of making.
Ion exchange process is the mainstream technology of on glass substrate, making optical waveguide, and its ultimate principle is: glass substrate is put into and is contained dopant ion (K normally
+, Ag
+, Li
+, Rb
+, Cs
+, Cu
+, Tl
+Deng) fused salt in, dopant ion in the fused salt and the Na in the glass substrate
+Exchange, get into the dopant ion diffusion region that glass substrate forms glass surface, the refractive index of this dopant ion diffusion region refractive index ratio glass substrate is big, as surface light waveguide core.Under the effect of DC electric field, the dopant ion diffusion region diffuses into glass substrate through the electric field assisting ion, as the buried light waveguide core, forms buried light waveguide.Its core shape of the buried light waveguide that ion-exchange and electric field assisting ion diffuse to form symmetry with the fiber core coupling, is coupled with optical fiber easily, has low-loss and distinguishing feature cheaply.
Also on multicomponent glass, do not make the relevant report of full buried type strip optical waveguide storehouse at present.
Summary of the invention
The method for making that the purpose of this invention is to provide the full buried type strip optical waveguide of a kind of glass-based storehouse.
The technical scheme that the present invention solves its technical matters employing is:
Be to adopt ion-exchange and electric field assisting ion diffusion technique, multilayer buried type optical waveguide forms through on glass substrate, making in order; This method for making comprises following implementation step:
1) prepares glass substrate;
The glass cleaning substrate is used deionized water rinsing again, in dustfree environment, dries;
2) make thin film at the glass substrate surface of cleaning, and adopt photoetching and corrosion processing technology to make the optical waveguide mask at glass substrate surface;
3) ion-exchange forms the waveguide of ground floor surface light;
After the salt that will contain dopant ion source heating in return makes its fusion, glass substrate is immersed in the ion-exchange source, the exchange temperature is 300～560 ℃, and be 0.1～5 hour swap time, takes out glass substrate at last and be cooled to normal temperature;
4) the electric field assisting ion diffuses to form the ground floor buried light waveguide;
After glass substrate is removed mask; Under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300～560 ℃, and the time is 0.5～20 hour; Electric field is 50～550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate, take out glass substrate at last and be cooled to normal temperature, produce the ground floor buried light waveguide;
5) glass cleaning substrate is again made thin film in the one side that waveguide is being arranged, and adopts photoetching and corrosion processing technology at glass substrate surface making optical waveguide mask;
6) ion-exchange forms the waveguide of second layer surface light;
After the salt that will contain dopant ion source heating in return makes its fusion, glass substrate is immersed in the ion-exchange source, the exchange temperature is 300～560 ℃, and be 0.1～5 hour swap time, takes out glass substrate at last and be cooled to normal temperature;
7) the electric field assisting ion diffuses to form second layer buried light waveguide;
After glass substrate is removed mask; Under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300～560 ℃, and the time is 0.5～20 hour; Electric field is 50～550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate, take out glass substrate at last and be cooled to normal temperature, produce second layer buried light waveguide;
8) repeat the 5th to 7 step, produce the 3rd layer, the 4th layer ... buried light waveguide;
9) the glass substrate end face is carried out optics processing.
Described dopant ion is K
+, Ag
+, Li
+, Rb
+, Cs
+, Cu
+Or Tl
+Ion.
Described glass substrate is a silicate glass, phosphate glass or borate glass.
The beneficial effect that the present invention has is:
The strip optical waveguide storehouse that method for making involved in the present invention is made is compared with the straight literary style making of femtosecond laser; Optical waveguide has the core of shape symmetry; Can on multicomponent glass, make, and manufacturing speed is fast, manufacturing technology is simple, with low cost, easily with optical fiber coupling, suitable large-scale production etc.The strip optical waveguide storehouse device of made of the present invention also has simple ripe, the low characteristics of integrated, loss easily of technology.
Description of drawings
Fig. 1 is the device synoptic diagram that femto-second laser pulse is directly write full buried type strip optical waveguide storehouse.
Fig. 2 is the manufacture craft process flow diagram of the full buried type strip optical waveguide of glass-based of the present invention storehouse.
Among the figure: 1, femto-second laser pulse; 2, object lens; 3, glass substrate; 4, XYZ three-dimensional platform; 5, optical waveguide; 6, mask; 7, ground floor surface light waveguide; 8, ground floor buried light waveguide; 9, second layer surface light waveguide; 10, second layer buried light waveguide; 11, top layer buried light waveguide.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
Embodiment 1:
In conjunction with shown in Figure 2, in order to make the full buried type strip optical waveguide of a bilayer storehouse, its processing step is following:
1) prepares phosphate glass substrate 3;
With concentrated sulphuric acid glass cleaning substrate 3, use deionized water rinsing again, dry in the dustfree environment;
2) make the aluminium film that a layer thickness is 100nm on glass substrate 3 surfaces of cleaning through sputtering technology, fine processes such as the photoetching through routine and corrosion are at glass substrate 3 surface making optical waveguide masks 6;
3) ion-exchange forms ground floor surface light waveguide 7;
After sodium nitrate and 100: 1 in molar ratio ratio of silver nitrate made its fusion as ion-exchange source and heating, glass substrate 3 is immersed in the exchange sources, the exchange temperature is 300 ℃, and be 1 hour swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
4) the electric field assisting ion diffuses to form ground floor buried light waveguide 8;
After glass substrate 3 usefulness corrosive liquids after the ion-exchange remove mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300 ℃, and the time is 20 hours; Electric field is 50V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce the ground floor buried light waveguide;
5) glass cleaning substrate 3 is again made the aluminium film that a layer thickness is 100nm in the one side that waveguide is arranged through sputtering technology, and fine processes such as photoetching through routine and corrosion are made optical waveguide masks 6 on glass substrate 3 surfaces;
6) ion-exchange forms the top layer surface light waveguide of strip optical waveguide storehouse;
Sodium nitrate and 100: 0.8 in molar ratio mixed of silver nitrate are prepared after ion-exchange source and heating make its fusion; Glass substrate 3 is immersed in the exchange source; The exchange temperature is 300 ℃, and be 0.5 hour swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
7) the electric field assisting ion diffuses to form top layer buried light waveguide 11;
After glass substrate 3 usefulness corrosive liquids after the ion-exchange remove mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300 ℃, and the time is 8 hours; Electric field is 50V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce second layer buried light waveguide;
8) glass substrate 3 end faces are carried out optics processing.
Embodiment 2:
In conjunction with shown in Figure 2, in order to make the full buried type strip optical waveguide of a bilayer storehouse, its processing step is following:
1) prepared silicon silicate glass substrate 3;
With concentrated sulphuric acid glass cleaning substrate 3, use deionized water rinsing again, dry in the dustfree environment;
2) make the aluminium film that a layer thickness is 100nm on glass substrate 3 surfaces of cleaning through thermal evaporation technology, fine processes such as the photoetching through routine and corrosion are at glass substrate 3 surface making optical waveguide masks 6;
3) ion-exchange forms ground floor surface light waveguide 7;
Potassium nitrate immerses glass substrate 3 in the exchange sources after making its fusion as ion-exchange source and heating, and the exchange temperature is 400 ℃, and be 5 hours swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
4) the electric field assisting ion diffuses to form ground floor buried light waveguide 8;
After glass substrate 3 after the ion-exchange removes mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 360 ℃, and the time is 8 hours; Electric field is 550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce the ground floor buried light waveguide;
5) glass cleaning substrate 3 is again made the aluminium film that a layer thickness is 100nm in the one side that waveguide is arranged through thermal evaporation technology, and fine processes such as photoetching through routine and corrosion are made optical waveguide masks 6 on glass substrate 3 surfaces;
6) ion-exchange forms the top layer surface light waveguide of strip optical waveguide storehouse;
Potassium nitrate immerses glass substrate 3 in the exchange sources after making its fusion as ion-exchange source and heating, and the exchange temperature is 400 ℃, and be 3 hours swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
7) the electric field assisting ion diffuses to form top layer buried light waveguide 11;
After glass substrate 3 after the ion-exchange removes mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 360 ℃, and the time is 4 hours; Electric field is 550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce second layer buried light waveguide;
8) glass substrate 3 end faces are carried out optics processing.
Embodiment 3:
In conjunction with shown in Figure 2, in order to make the full buried type strip optical waveguide of a bilayer storehouse, its processing step is following:
1) prepared silicon silicate glass substrate 3;
With concentrated sulphuric acid glass cleaning substrate 3, use deionized water rinsing again, dry in the dustfree environment;
2) make the aluminium film that a layer thickness is 100nm on glass substrate 3 surfaces of cleaning through thermal evaporation technology, fine processes such as the photoetching through routine and corrosion are at glass substrate 3 surface making optical waveguide masks 6;
3) ion-exchange forms ground floor surface light waveguide 7;
After sodium sulphate and 1: 1 in molar ratio ratio of copper sulphate made its fusion as ion-exchange source and heating, glass substrate 3 is immersed in the exchange sources, the exchange temperature is 560 ℃, and be 0.3 hour swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
4) the electric field assisting ion diffuses to form ground floor buried light waveguide 8;
After glass substrate 3 after the ion-exchange removes mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 560 ℃, and the time is 1 hour; Electric field is 300V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce the ground floor buried light waveguide;
5) glass cleaning substrate 3 is again made the aluminium film that a layer thickness is 100nm in the one side that waveguide is arranged through thermal evaporation technology, and fine processes such as photoetching through routine and corrosion are made optical waveguide masks 6 on glass substrate 3 surfaces;
6) ion-exchange forms the top layer surface light waveguide of strip optical waveguide storehouse;
After sodium sulphate and 1: 1 in molar ratio ratio of copper sulphate made its fusion as ion-exchange source and heating, glass substrate 3 is immersed in the exchange sources, the exchange temperature is 560 ℃, and be 0.1 hour swap time, takes out glass substrate 3 at last and be cooled to normal temperature;
7) the electric field assisting ion diffuses to form top layer buried light waveguide 11;
After glass substrate 3 after the ion-exchange removes mask 6; Put into the sodium nitrate fused salt and under electric field action, carry out the diffusion of electric field assisting ion, temperature is 560 ℃, and the time is 0.5 hour; Electric field is 300V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate 3, take out glass substrate 3 at last and be cooled to normal temperature, produce second layer buried light waveguide;
8) glass substrate 3 end faces are carried out optics processing.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (3)
1. the method for making of the full buried type strip optical waveguide of a glass-based storehouse is characterized in that: be to adopt ion-exchange and electric field assisting ion diffusion technique, multilayer buried type optical waveguide forms through on glass substrate, making in order; This method for making comprises following implementation step:
1) prepares glass substrate (3);
Glass cleaning substrate (3) is used deionized water rinsing again, in dustfree environment, dries;
2) make thin film on glass substrate (3) surface of cleaning, and adopt photoetching and corrosion processing technology to make optical waveguide mask (6) at glass substrate surface;
3) ion-exchange forms ground floor surface light waveguide (7);
After the salt that will contain dopant ion source heating in return makes its fusion, glass substrate (3) is immersed in the ion-exchange source, the exchange temperature is 300～560 ℃, and be 0.1～5 hour swap time, takes out glass substrate (3) at last and be cooled to normal temperature;
4) the electric field assisting ion diffuses to form ground floor buried light waveguide (8);
After glass substrate (3) is removed mask; Under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300～560 ℃, and the time is 0.5～20 hour; Electric field is 50～550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate (3), take out glass substrate (3) at last and be cooled to normal temperature, produce the ground floor buried light waveguide;
5) glass cleaning substrate (3) is again made thin film in the one side that waveguide is being arranged, and adopts photoetching and corrosion processing technology at glass substrate surface making optical waveguide mask (6);
6) ion-exchange forms second layer surface light waveguide (9);
After the salt that will contain dopant ion source heating in return makes its fusion, glass substrate (3) is immersed in the ion-exchange source, the exchange temperature is 300～560 ℃, and be 0.1～5 hour swap time, takes out glass substrate (3) at last and be cooled to normal temperature;
7) the electric field assisting ion diffuses to form second layer buried light waveguide (10);
After glass substrate (3) is removed mask; Under electric field action, carry out the diffusion of electric field assisting ion, temperature is 300～560 ℃, and the time is 0.5～20 hour; Electric field is 50～550V/mm; A homonymy of waveguide is arranged on electric field positive pole and the glass substrate (3), take out glass substrate (3) at last and be cooled to normal temperature, produce second layer buried light waveguide;
8) repeat the 5th) to 7) step, produce the 3rd layer, the 4th layer ... buried light waveguide;
9) glass substrate (3) end face is carried out optics processing.
2. the method for making of the full buried type strip optical waveguide of glass-based according to claim 1 storehouse, it is characterized in that: described dopant ion is K
+, Ag
+, Li
+, Rb
+, Cs
+, Cu
+Or T1
+Ion.
3. the method for making of the full buried type strip optical waveguide of glass-based according to claim 1 storehouse, it is characterized in that: described glass substrate (3) is a silicate glass, phosphate glass or borate glass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101410512A CN102193146B (en) | 2011-05-26 | 2011-05-26 | Method for manufacturing glass substrate all buried strip-type optical waveguide stack |
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|---|---|---|---|
| CN2011101410512A CN102193146B (en) | 2011-05-26 | 2011-05-26 | Method for manufacturing glass substrate all buried strip-type optical waveguide stack |
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| CN102193146B true CN102193146B (en) | 2012-10-31 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102393549B (en) * | 2011-11-25 | 2014-12-24 | 深圳市中兴新地通信器材有限公司 | Three-dimensional integration glass-based optical waveguide device and manufacturing method thereof |
| KR20200105514A (en) * | 2018-01-18 | 2020-09-07 | 코닝 인코포레이티드 | Low-loss waveguide formed in high-transmission glass using Ag-Na ion exchange |
| CN108387973B (en) * | 2018-02-05 | 2019-12-20 | 中国科学院上海光学精密机械研究所 | Method for reducing bending loss of femtosecond laser direct writing waveguide |
| CN108828718A (en) * | 2018-06-15 | 2018-11-16 | 深圳市慧康精密仪器有限公司 | A method of improving glass based optical waveguide chip uniformity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1746707A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of ionic exchange glass light waveguide device |
| CN1746708A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of buried glass light waveguide device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1746707A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of ionic exchange glass light waveguide device |
| CN1746708A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of buried glass light waveguide device |
Non-Patent Citations (1)
| Title |
|---|
| 郝寅雷等.低损耗离子交换玻璃基光波导制备与分析.《无机材料学报》.2009,第24卷(第5期),第1041-1044页. * |
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