CN111208608A - Manufacturing method of ion exchange glass-based buried waveguide mode spot converter - Google Patents
Manufacturing method of ion exchange glass-based buried waveguide mode spot converter Download PDFInfo
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- CN111208608A CN111208608A CN202010083823.0A CN202010083823A CN111208608A CN 111208608 A CN111208608 A CN 111208608A CN 202010083823 A CN202010083823 A CN 202010083823A CN 111208608 A CN111208608 A CN 111208608A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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Abstract
The invention discloses a manufacturing method of an ion exchange glass-based buried waveguide modular spot converter, which comprises two links: a first ring section is used for manufacturing a buried strip-shaped ion doping area on the surface of a glass substrate by an ion exchange method; the second step is to vertically place the glass substrate on a horizontal hot plate for gradient temperature ion diffusion. The glass substrate with the buried strip-shaped ion doping area manufactured below the surface is vertically placed on a horizontal hot plate to carry out gradient temperature ion diffusion, the temperature gradient in the length direction of the buried strip-shaped ion doping area in the glass substrate is utilized to generate the gradient of the diffusion rate of the doped ions in the glass substrate along the length direction of the buried strip-shaped ion doping area, and the buried strip-shaped ion doping area is changed into the buried conical ion doping area. The size of the cross section of the buried conical ion doping region is improved in the two axial directions, so that the matching degree of the shape and the size of the cross section of the mode spot converter and the optical fiber core is improved, and the insertion loss of a device is reduced.
Description
Technical Field
The invention relates to the field of optical devices and integrated optics, in particular to a manufacturing method of an ion-exchange glass-based buried waveguide mode spot converter.
Background
In 1969, s.e.miller proposed the concept of integrated optics, which was based on the idea of fabricating optical waveguides on the surface of the same substrate (or chip) and then implementing integrated fabrication of various devices such as light sources, couplers, filters, etc. By such integration, miniaturization, weight reduction, and stabilization of the optical system are achieved, and device performance is improved.
Integrated optical devices fabricated on glass substrates (1) using ion exchange technology have received considerable attention from industry and researchers. Glass-based integrated optical waveguide devices based on ion exchange technology have several excellent properties, including: low transmission loss, easy doping of high-concentration rare earth ions, matching with the optical characteristics of the optical fiber, low coupling loss, good environmental stability, easy integration, low cost and the like. In 1972, the first article on ion exchange fabrication of optical waveguides was published, and the initiation of research on glass-based integrated optical devices was marked. Since then, research institutions in various countries have invested a great deal of manpower and financial resources in developing glass-based integrated optical devices. Up to now, integrated optical devices on several glass substrates (1) have been mass-produced and serialized, successfully used in optical communication, optical interconnection and optical sensing networks, and have shown great competitiveness.
The spot size converter is used for realizing the change of the spot size of the optical waveguide in the integrated optical circuit, is usually used for matching the spot size of the optical waveguide with different core diameters, reduces the insertion loss generated by the mismatch of the core diameters, and has important application value in the integrated optical circuit.
The existing buried waveguide mode-size converter structure manufactured on a glass substrate (1) based on an ion exchange technology is shown in figure 1, a buried wedge-shaped ion doping area (7) is arranged below the surface in the glass substrate (1), and the cross-sectional dimension of the buried wedge-shaped ion doping area (7) is utilizedThe variation achieves spot switching. The manufacturing process of the spot-size converter is shown in fig. 2, and mainly includes four steps: the first step is photoetching, a mask (2) used for optical waveguide is deposited on the surface of a glass substrate (1), and part of the mask (2) on the glass substrate (1) is removed through photoetching and corrosion to form a wedge-shaped hollow structure as a wedge-shaped ion exchange window; the second step is ion exchange, the glass substrate (1) with the mask (2) is placed in the high-temperature fused salt containing the doping ions for ion exchange, and the doping ions in the fused salt containing the doping ions pass through an ion exchange window formed by the mask (2) and Na in the glass substrate (1)+And exchanging, and enabling the doped ions to enter the surface of the glass substrate (1) and diffuse to form a surface wedge-shaped ion doped region (3). And the third step is to remove the mask (2) and remove the mask (2) on the surface of the glass substrate (1) by adopting a chemical corrosion method. And fourthly, using sodium carbonate molten salt on two sides of the glass substrate (1) as electrodes to assist ion migration by an electric field, applying direct current voltage on two sides of the glass substrate (1), migrating the surface wedge-shaped ion doping area (3) below the surface of the glass substrate (1) under the action of the direct current electric field, changing the surface wedge-shaped ion doping area (3) into a buried wedge-shaped ion doping area (7), and obtaining the formed spot size converter chip. Since the ion exchange window formed by the mask (2) on the surface of the glass substrate (1) is in a wedge shape, the width of the buried wedge-shaped ion doping region (7) below the surface of the glass substrate (1) is also in a shape consistent with the ion exchange window, and the wedge-shaped distribution characteristic is shown in the plane of the glass substrate (1): the width of the wedge-shaped ion doping region (7) is small at the part with small ion exchange window width, and the width of the wedge-shaped ion doping region (7) is large at the part with large ion exchange window width.
However, the performance of such spot-size converters is currently inadequate for many important applications. According to the foregoing, the spot size converter manufactured by the conventional method can realize the spot size conversion of the spot size in the plane direction of the glass substrate (1). However, in the case of a glass substrate (1) having ion exchange windows of different widths on the surface, the thickness of the buried wedge-shaped ion doped region (7) does not vary much, that is, the spot size of the optical waveguide hardly varies in the direction perpendicular to the plane of the glass substrate (1). Therefore, the spot size converter has a limited application in integrated optical devices, such as devices for coupling between single mode and multimode optical fibers, with insertion loss above 6.5dB, due to the large difference in the shape of the waveguide cross-section between the two axes.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for manufacturing an ion exchange glass-based buried waveguide modular spot converter, which realizes the manufacture of the buried waveguide modular spot converter by vertically placing a glass-based ion exchange buried strip-shaped optical waveguide on a horizontal hot plate (5) for gradient temperature ion diffusion.
The technical scheme adopted by the invention for solving the technical problem comprises two links: a first ring section is used for manufacturing a buried strip-shaped ion doping area (8) on the surface of a glass substrate (1) by an ion exchange method; the second step is that the glass substrate (1) is vertically placed on a horizontal hot plate (5) for ion diffusion with gradient temperature. This method is characterized in that: the method comprises the steps of vertically placing a glass substrate (1) with a buried strip-shaped ion doping area (8) on the surface below the surface on a horizontal hot plate (5) for gradient temperature ion diffusion, utilizing the temperature gradient in the glass substrate (1) along the length direction of the buried strip-shaped ion doping area (8), enabling the glass substrate (1) to generate a gradient of the diffusion rate of doped ions along the length direction of the buried strip-shaped ion doping area (8), increasing the cross section size of the buried strip-shaped ion doping area (8) on the surface of the glass substrate (1) close to one end of the hot plate (5), and changing the buried strip-shaped ion doping area (8) into a buried conical ion doping area (9).
The first step is to form the buried stripe-shaped ion-doped region (8) by ion exchange, and the process is shown in FIG. 3. The buried strip-shaped ion doping area (8) is manufactured on the surface of the glass substrate (1) in four steps: firstly, photoetching, namely depositing a mask (2) on the surface of a glass substrate (1), and removing part of the mask (2) on the surface of the glass substrate (1) through photoetching and corrosion processes to form a strip-shaped hollow structure serving as a strip-shaped ion exchange window; the second step is that ion exchange forms a surface strip-shaped ion doping area (4) on the surface of the glass substrate (1),placing a glass substrate (1) with an ion exchange window in high-temperature fused salt containing doping ions for ion exchange, wherein the doping ions in the fused salt containing the doping ions pass through the ion exchange window formed by a mask (2) on the surface of the glass substrate (1) and Na in the glass substrate (1)+And exchanging, wherein the doped ions enter the surface of the glass substrate (1) and are diffused on the surface layer of the glass substrate (1) to form a surface strip-shaped ion doped region (4). And the third step is to remove the mask (2) and remove the mask (2) on the surface of the glass substrate (1) by adopting a chemical corrosion method. And fourthly, using sodium carbonate molten salt on two sides of the glass substrate (1) as electrodes to assist ion migration by an electric field, applying direct current voltage on two sides of the glass substrate (1), and migrating the surface strip-shaped ion doping area (4)) into the lower part of the surface of the glass substrate (1) under the action of the direct current electric field, wherein the surface strip-shaped ion doping area (4) becomes a buried strip-shaped ion doping area (8).
The second step is to perform gradient temperature ion diffusion on the glass substrate (1), and the process is shown in FIG. 4. The figure shows that a buried strip-shaped ion doping area (8) formed on the surface of a glass substrate (1) after ion exchange is made into a buried cone-shaped ion doping area (9) by a gradient temperature ion diffusion method. The hot plate (5) is horizontally arranged, the hot plate (5) is heated to the diffusion temperature and the temperature is kept constant, the glass substrate (1) is vertically arranged on the hot plate (5), and the buried strip-shaped ion doping area (8) in the glass substrate (1) is vertical to the plane direction of the hot plate (5). The temperature is higher because the lower end of the glass substrate (1) is in contact with the hot plate (5), while the upper end of the glass substrate (1) is positioned in the air and is lower, and a temperature gradient is formed along the length direction of the buried strip-shaped ion doping area (8). Since the diffusion rate of the dopant ions in the glass increases with increasing temperature, a gradient of the diffusion coefficient of the dopant ions is generated along the length direction of the buried stripe-shaped ion-doped region (8): the depth and width of the ion doped region at the lower end of the glass substrate (1) are increased greatly, while the depth and width of the ion doped region at the upper end of the glass substrate (1) are increased slightly, so that a gradient of the cross-sectional dimension of the ion doped region is formed between the upper end and the lower end of the glass substrate (1). After the ion diffusion at the gradient temperature is finished, the buried strip-shaped ion doping area (8) on the surface of the glass substrate (1) becomes a buried conical ion doping area (9), and the structure of the buried conical ion doping area is shown in figure 5.
The material of the glass substrate (1) is silicate glass, phosphate glass or borate glass.
The doped ion is Ag+，Cs+Or Tl+。
The hot plate (5) is a metal plate which is horizontally arranged and has a flat surface.
Compared with the prior art for manufacturing the ion exchange glass-based surface waveguide spot size converter, the invention has the beneficial effects that: a buried conical ion doped region (9) is formed in the manufactured spot size converter, the consistency of the cross section size of the ion doped region in two axial directions is obviously improved, so that the matching degree of the shape and the size of the spot size converter and the cross section of the optical fiber core is improved, and the insertion loss of a device is reduced.
Drawings
FIG. 1 is a schematic diagram of a glass-based buried waveguide mode-spot converter fabricated according to the prior art.
FIG. 2 is a schematic diagram of a prior art process for fabricating a glass-based buried waveguide mode spot converter.
Fig. 3 is a schematic diagram of a process for fabricating a glass-based buried stripe optical waveguide.
FIG. 4 is a schematic diagram of a process for fabricating a glass-based buried waveguide mode-spot converter according to the method of the present invention.
FIG. 5 is a schematic diagram of a glass-based buried waveguide mode spot converter made by the method of the present invention.
In the figure: 1. a glass substrate; 2. masking; 3. a surface wedge ion doped region; 4. a surface strip-shaped ion doping region; 5. a hot plate; 7. burying the wedge-shaped ion doping region; 8. burying the strip-shaped ion doping area; 9. burying the conical ion doped region.
Detailed Description
The invention relates to a method for manufacturing an ion-exchange glass-based buried waveguide mode spot converter, which uses Ag below+/Na+The ion-exchange glass-based buried waveguide mode spot converter is taken as an example, and the specific implementation of the ion-exchange glass-based buried waveguide mode spot converter is introduced.
Example (b): ag+/Na+Ion-exchange glass-based buried waveguide mode spot converter
Required equipment and materials: the device comprises a BK7 glass substrate (1) with double-sided polishing function, a cleaning device, a washing liquid, a sputtering coating device, a strip waveguide mask plate (with the line width of 3-5 microns), a photoetching device, a corrosion device, acetone, a beaker, a high-temperature furnace, a chip end face grinding and polishing device, a quartz crucible, a quartz basket, a hot plate (5), and Ag doped ions+The fused salt containing doped ions is Ca (NO)3)2、NaNO3Mixed molten salt with AgNO3 (the molar ratio of the three is 49:49:2), NaNO3Fused salt, platinum electrode, direct current power supply.
The method mainly comprises the following steps:
(A) manufacture of buried strip-shaped ion doped region (8) of glass substrate (1)
The method mainly comprises the following steps: cleaning a glass substrate (1); sputtering an aluminum film with the thickness of 100-300 nm on the surface of the glass substrate (1) to be used as a mask (2); the strip waveguide pattern on the strip waveguide mask plate is transferred to an aluminum film on the surface of the glass substrate (1) through gluing, curing, photoetching, corrosion and photoresist removing operations, and a strip ion exchange window with the width of 3-5 microns is formed on the aluminum film.
Mixing Ca (NO)3)2、NaNO3And AgNO3Putting the mixed molten salt into a quartz crucible, putting the quartz crucible into a high-temperature furnace with the temperature of 320 ℃, and preserving the heat for 2 hours until the molten salt is completely melted; and (3) placing the glass substrate (1) with the ion exchange window on the surface after photoetching into a quartz basket, immersing the quartz basket into the molten salt in the quartz crucible, preserving the temperature for 10-30 minutes, taking out the glass substrate (1), cooling, removing the mask (2) by using an acid corrosion method, and cleaning.
In the process, Ag in the molten salt is mixed+Ion exchange window formed on the surface of the glass substrate (1) through the mask (2) and Na in the glass substrate (1)+Performing ion exchange to mix Ag in molten salt+Enters the glass substrate (1) and forms a surface strip-shaped ion doped region (4) in the glass substrate (1), and meanwhile, Na in the glass substrate (1)+And entering molten salt.
Carrying out electric field assisted ion migration at 320 ℃, taking sodium carbonate molten salt on two sides of the glass substrate (1) as electrodes respectively, applying 200-400V direct-current voltage on two sides of the glass substrate (1), and under the action of the direct-current electric field, migrating the surface strip-shaped ion doping region (4) into the lower surface of the glass substrate (1), so that the surface strip-shaped ion doping region (4) becomes a buried strip-shaped ion doping region (8).
(B) Ion diffusion of glass substrate (1) on hot plate (5) at gradient temperature
The hot plate (5) is placed in the air and horizontally, the hot plate (5) is heated to 300 ℃, the temperature is kept constant, and the glass substrate (1) is placed on the hot plate (5) for gradient temperature ion diffusion. The glass substrate (1) is vertically arranged on the hot plate (5), and the strip-shaped ion doping area (4) in the glass substrate (1) is vertical to the plane direction of the hot plate (5). Gradient temperature ion diffusion time is 2-5 hours.
In this process, the temperature of the lower end of the glass substrate (1) is high, and Ag in the strip-shaped ion-doped region (8) is buried+Fast diffusion of Ag+The cross section of the doped region is large in size; the upper end of the glass substrate (1) has low temperature and buries Ag in the strip-shaped ion doping area (8)+Slow diffusion, Ag+The cross section of the doped region is small in size; the buried strip-shaped ion doped region (8) becomes a buried cone-shaped ion doped region (9).
And finally, grinding and polishing the two end faces of the glass substrate (1).
Through optimizing the manufacturing process parameters, when the device is used for realizing the coupling between the single-mode optical fiber and the multimode optical fiber, the insertion loss is less than 2.8 dB.
The foregoing detailed description is intended to illustrate and not limit the invention, which is intended to be within the spirit and scope of the appended claims, and any changes and modifications that fall within the true spirit and scope of the invention are intended to be covered by the following claims.
Claims (4)
1. A manufacturing method of an ion exchange glass-based buried waveguide mode spot converter comprises two links: a first ring section is used for manufacturing a buried strip-shaped ion doping area (8) on the surface of a glass substrate (1) by an ion exchange method; the second step is that the glass substrate (1) is vertically placed on a horizontal hot plate (5) for ion diffusion with gradient temperature. This method is characterized in that: the method comprises the steps of vertically placing a glass substrate (1) with a buried strip-shaped ion doping area (8) on the surface below the surface on a horizontal hot plate (5) for gradient temperature ion diffusion, utilizing the temperature gradient in the glass substrate (1) along the length direction of the buried strip-shaped ion doping area (8), enabling the glass substrate (1) to generate a gradient of the diffusion rate of doped ions along the length direction of the buried strip-shaped ion doping area (8), increasing the cross section size of the buried strip-shaped ion doping area (8) on the surface of the glass substrate (1) close to one end of the hot plate (5), and changing the buried strip-shaped ion doping area (8) into a buried conical ion doping area (9).
2. The method of claim 1, wherein the method comprises: the glass substrate (1) is made of silicate glass, borosilicate glass, phosphate glass or borate glass.
3. The method of claim 1, wherein the method comprises: the doped ions in the strip-shaped ion doped region (4) are Ag+，Cs+Or Tl+。
4. The method of claim 1, wherein the method comprises: the hot plate (5) is a metal plate which is horizontally arranged and has a flat surface.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0302043A2 (en) * | 1987-07-28 | 1989-02-01 | Polaroid Corporation | Process of tapering waveguides |
| CN102645701A (en) * | 2012-05-04 | 2012-08-22 | 上海光芯集成光学股份有限公司 | Method for producing optical waveguide on surface of glass substrate by utilizing ion exchange method |
| CN104656187A (en) * | 2015-02-06 | 2015-05-27 | 浙江大学 | Glass-based ion exchange optical waveguide chip integrated with magneto-optical function |
| CN106291814A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of fiber waveguide manufacture method and fiber waveguide |
| CN108828718A (en) * | 2018-06-15 | 2018-11-16 | 深圳市慧康精密仪器有限公司 | A method of improving glass based optical waveguide chip uniformity |
-
2020
- 2020-02-08 CN CN202010083823.0A patent/CN111208608A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0302043A2 (en) * | 1987-07-28 | 1989-02-01 | Polaroid Corporation | Process of tapering waveguides |
| CN102645701A (en) * | 2012-05-04 | 2012-08-22 | 上海光芯集成光学股份有限公司 | Method for producing optical waveguide on surface of glass substrate by utilizing ion exchange method |
| CN104656187A (en) * | 2015-02-06 | 2015-05-27 | 浙江大学 | Glass-based ion exchange optical waveguide chip integrated with magneto-optical function |
| CN106291814A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of fiber waveguide manufacture method and fiber waveguide |
| CN108828718A (en) * | 2018-06-15 | 2018-11-16 | 深圳市慧康精密仪器有限公司 | A method of improving glass based optical waveguide chip uniformity |
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