CN113381699B - 一种并发双频高效率Doherty功率放大器及其设计方法 - Google Patents
一种并发双频高效率Doherty功率放大器及其设计方法 Download PDFInfo
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- CN113381699B CN113381699B CN202110531293.6A CN202110531293A CN113381699B CN 113381699 B CN113381699 B CN 113381699B CN 202110531293 A CN202110531293 A CN 202110531293A CN 113381699 B CN113381699 B CN 113381699B
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- 238000013461 design Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 title abstract description 10
- 230000003321 amplification Effects 0.000 claims abstract description 21
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 21
- 230000009466 transformation Effects 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims description 21
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 3
- 230000008030 elimination Effects 0.000 claims description 2
- 238000003379 elimination reaction Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110531293.6A CN113381699B (zh) | 2021-05-14 | 2021-05-14 | 一种并发双频高效率Doherty功率放大器及其设计方法 |
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CN202110531293.6A CN113381699B (zh) | 2021-05-14 | 2021-05-14 | 一种并发双频高效率Doherty功率放大器及其设计方法 |
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CN113381699A CN113381699A (zh) | 2021-09-10 |
CN113381699B true CN113381699B (zh) | 2022-09-30 |
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CN202110531293.6A Active CN113381699B (zh) | 2021-05-14 | 2021-05-14 | 一种并发双频高效率Doherty功率放大器及其设计方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113965170B (zh) * | 2021-10-27 | 2022-07-12 | 新拓尼克(北京)科技研发中心有限公司 | 一种具有谐波优化功能的双频Doherty功率放大器 |
CN114372434B (zh) * | 2021-12-13 | 2024-06-04 | 杭州电子科技大学 | 一种基于左右手复合线结构的双频Doherty功率放大器及其设计方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN2014DN10711A (zh) * | 2012-07-05 | 2015-09-04 | Ericsson Telefon Ab L M | |
CN102801387A (zh) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | 一种双模双带高效率Doherty功率放大器 |
US10637519B2 (en) * | 2015-06-09 | 2020-04-28 | The University Of Electro-Communications | Dual-band amplifier |
CN206878781U (zh) * | 2017-05-12 | 2018-01-12 | 清华大学 | 基于单频线的毫米波双频Doherty功率放大器 |
CN108718188B (zh) * | 2018-04-20 | 2022-02-11 | 杭州电子科技大学 | 一种宽带高效率Doherty功率放大器及其设计方法 |
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Application publication date: 20210910 Assignee: Hangzhou Xinhang Microelectronics Technology Co.,Ltd. Assignor: HANGZHOU DIANZI University Contract record no.: X2022330000732 Denomination of invention: A Concurrent Dual Frequency High Efficiency Doherty Power Amplifier and Its Design Method Granted publication date: 20220930 License type: Common License Record date: 20221206 |
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Effective date of registration: 20240402 Address after: 073000 West 200m northbound at the intersection of Dingzhou commercial street and Xingding Road, Baoding City, Hebei Province (No. 1910, 19th floor, building 3, jueshishan community) Patentee after: Hebei Kaitong Information Technology Service Co.,Ltd. Country or region after: China Address before: 310018 No. two, Xiasha Higher Education Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University Country or region before: China |
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Effective date of registration: 20240409 Address after: Room 2501, Block C, Qingkong Innovation Base, No. 529, Nanzhonghuan Street, Taiyuan Xuefu Park, Taiyuan Comprehensive Reform Demonstration Zone, Taiyuan City, Shanxi Province, 030000 Patentee after: Bohao Technology Co.,Ltd. Country or region after: China Address before: 073000 West 200m northbound at the intersection of Dingzhou commercial street and Xingding Road, Baoding City, Hebei Province (No. 1910, 19th floor, building 3, jueshishan community) Patentee before: Hebei Kaitong Information Technology Service Co.,Ltd. Country or region before: China |
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