CN113381154B - Interconnection/transition structure of coaxial transmission line and chip - Google Patents
Interconnection/transition structure of coaxial transmission line and chip Download PDFInfo
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- CN113381154B CN113381154B CN202110554175.7A CN202110554175A CN113381154B CN 113381154 B CN113381154 B CN 113381154B CN 202110554175 A CN202110554175 A CN 202110554175A CN 113381154 B CN113381154 B CN 113381154B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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Abstract
The invention discloses an interconnection/transition structure of a coaxial transmission line and an MMIC chip, which comprises a support pillar, an isolation strip, a transition inner conductor, a bonding wire and a chip carrying platform, wherein the isolation strip is arranged on the support pillar; the chip part is arranged on the chip carrying platform, the supporting column is positioned on the side face of the chip part, and the supporting column extends out of the side wall of the transition inner conductor and plays a role in supporting below the transition inner conductor; the isolation strips are arranged between the transition inner conductors and the supporting columns, and electrically isolate the transition inner conductors from the supporting columns; the bonding wires comprise an inner bonding wire and an outer bonding wire, the inner bonding wire is connected with the transition inner conductor and the chip signal contact, and the outer bonding wire is connected with the outer conductor and the chip grounding contact to form a signal transmission channel; signals are input from the coaxial transmission line, are transmitted forwards in a TEM mode, and after the signals are transmitted for a distance, mode conversion and impedance matching are carried out through the structure, so that the electrical performance is improved, and meanwhile, the mechanical structure strength is obviously enhanced.
Description
Technical Field
The invention belongs to the fields of wireless communication, chip technology and millimeter wave terahertz technology, and particularly relates to a transition/interconnection/transition structure which is wide in bandwidth, low in loss and high in mechanical structure strength of a coaxial transmission line and a chip.
Background
In the frequency band of W (75-110GHz) and above, the packaging of a large number of passive radio frequency devices and active devices is usually realized by adopting a machined (such as CNC) rectangular waveguide, so that the radio frequency front-end system has the defects of large volume, heavy weight, high cost and the like. Obviously, the traditional waveguide packaging technology has become a main bottleneck limiting the development of the millimeter wave terahertz radio frequency front-end system to miniaturization and light weight. Therefore, advanced high-frequency transmission line technology and packaging technology are developed, a design method matched with the technology is provided on the basis, and finally a design and integration scheme of a micro-system is provided, so that the original huge system size is reduced to the size of several coins, the original system weight of several kilograms is greatly reduced, the adaptability and the carrying capacity of the system are greatly improved, and the micro-system is one of key technical bottlenecks in developing millimeter wave terahertz radio frequency front-end systems.
The millimeter wave device based on the rectangular coaxial transmission line has the advantages of light weight, small coupling between lines, large power capacity and wide bandwidth, and is convenient to integrate with various active and passive devices. However, the transition structure of the existing waveguide/microstrip line and chip cannot be applied to the rectangular coaxial line, and the simple bonding wire connection scheme cannot give consideration to both electrical performance and mechanical structure strength.
Disclosure of Invention
The invention aims to provide an interconnection/transition structure of a rectangular coaxial transmission line and an MMIC chip, which can assemble the rectangular coaxial transmission line and the MMIC chip together to realize nearly lossless transmission of signals between the rectangular coaxial transmission line and the MMIC chip, has extremely wide relative bandwidth and can cover the whole W wave band; the insertion loss is extremely low, and the influence on the performance of other parts of the system is almost negligible; the support structure has high reliability and can meet the requirement of a bonding process on the mechanical structure strength; the matching degree with the existing rectangular coaxial transmission line process is high, and no additional process flow is needed.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose: an interconnection/transition structure of a coaxial transmission line and a chip comprises a support pillar, an isolation strip, a transition inner conductor, a bonding wire and a chip carrying platform; the chip part is arranged on the chip carrying platform, the supporting columns are located on the side faces of the chip part, the supporting columns extend out of the side walls of the transition inner conductors, and a supporting effect is achieved below the transition inner conductors; the isolation strip is arranged between the transition inner conductor and the support column, and the transition inner conductor is electrically isolated from the support column by the isolation strip; the bonding wire comprises an inner bonding wire and an outer bonding wire, the inner bonding wire is connected with the transition inner conductor and the chip signal contact, and the outer bonding wire is connected with the outer conductor and the chip grounding contact to form a signal transmission channel.
And fillet structures are arranged at the end surfaces of the transition inner conductor and the support column.
The distance between the lower surface of the transition inner conductor and the chip carrying platform is the sum of the thickness of the isolation strip and the height of the supporting column.
The bonding wire is made of standard gold wire with the diameter of 25 mu m.
The outer conductor of the coaxial transmission line extends outwards to form a step as a chip carrying platform, and two sides of the outer conductor are connected to a grounding contact of a chip through bonding wires and then connected to the ground of the chip through grounding through holes.
The coaxial transmission line comprises an inner conductor, a filling medium, an outer conductor and an inner conductor photoresist strip, wherein the filling medium is arranged between the inner conductor and the outer conductor, the inner conductor photoresist strip is used for fixing the inner conductor, the inner conductor is connected with the transition inner conductor, the filling medium adopts air, the inner conductor photoresist strip is made of photoresist, and the inner conductor and the outer conductor are made of copper.
The cross section of the coaxial transmission line is rectangular or circular.
The distance between the bonding wire and the chip connecting end is the same as the distance between the interface contacts of the chip.
The maximum value of the longitudinal dimension is 0.75mm, the maximum value of the transverse dimension is 1.8mm, and the horizontal distance between the tail end of the coaxial line inner conductor and the chip carrying platform opposite to the tail end is 0.05 mm.
Compared with the prior art, the invention has at least the following beneficial effects: the photoetching adhesive tape electrically isolates the inner conductor from the supporting column, and the supporting column below the photoetching adhesive tape extends out of the vertical surface right opposite to the inner conductor, so that the supporting function on the inner conductor is realized, the reliability of the whole structure is improved, the high mechanical structure strength is provided for the bonding process, and the inner conductor is prevented from being broken during bonding; the lower part of the outer conductor of the coaxial transmission line is expanded into a platform, the platform supports a chip and provides large-area grounding for the chip, two side parts of the outer conductor are connected to a grounding contact of the chip through bonding wires and then connected to a signal ground of the chip through a grounding through hole, and the two connection modes ensure the reliability of grounding together; the coaxial transmission line and the MMIC chip are assembled together, so that almost lossless transmission of signals between the coaxial transmission line and the MMIC chip is realized, and meanwhile, the coaxial transmission line has extremely wide relative bandwidth and can cover the whole W wave band; the insertion loss is extremely low, and the influence on the performance of other parts of the system is almost negligible; the support structure has high reliability and can meet the requirement of a bonding process on the mechanical structure strength; the matching degree with the existing rectangular coaxial transmission line process is high, and no additional process flow is needed.
Drawings
FIG. 1 is a three-dimensional schematic diagram of a chip interconnect/transition structure that can be implemented in accordance with the present invention.
Fig. 2 is a three-dimensional view of a coaxial transmission line interface portion of the chip interconnect/transition structure of the present invention.
Fig. 3 is a three-dimensional schematic diagram of a transition circuit portion of the chip interconnect/transition structure of the present invention.
Fig. 4 is a partial three-dimensional schematic view of a transition structure of the chip interconnect/transition structure of the present invention.
Fig. 5 is a three-dimensional view of a chip GSG interface portion of the chip interconnect/transition structure of the present invention.
Fig. 6 is a simulation plot of curves S11 and S22 for the chip interconnect/transition structure of the present invention.
Fig. 7 is a simulation diagram of the S21 curve of the chip interconnect/transition structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive step, are intended to be within the scope of the claims.
In the description of the embodiments of the present invention, it is to be understood that the terms "above", "below", "left", "right", "horizontal" and "vertical" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the embodiments of the present invention and simplifying the description, and are not to be construed as indicating specific orientations of the indicated elements or devices.
In the description of the embodiments of the present invention, given that the structural dimensions are preferred parameters, the dimensional parameters of the various components can be further modified to obtain the actually desired performance with reference to the embodiments of the present invention.
The invention provides an interconnection/transition structure of a coaxial transmission line and a chip, which is used for realizing high-performance interconnection between a rectangular coaxial transmission line and the chip. The interconnection/transition structure is expanded into a chip supporting platform by utilizing the lower half part of the rectangular coaxial transmission line outer conductor, and provides reliable grounding for a chip; the coaxial line inner conductor and the signal contact of the chip are connected together by using a bonding wire, and the coaxial line outer conductor and the grounding contact of the chip are connected together.
Referring to fig. 1 and 3, an interconnection/transition structure of a coaxial transmission line and a chip includes a supporting pillar 5, an isolation strip 6, a transition inner conductor 7, a bonding wire 8, and a chip mounting platform 9; the chip part is arranged on the chip carrying platform 9, the supporting column 5 is positioned on the side face of the chip part, the supporting column 5 extends out of the side wall of the transition inner conductor 7, and the supporting column plays a supporting role below the transition inner conductor 7; the isolation strip 6 is arranged between the transition inner conductor 7 and the support column 5, and the isolation strip 6 electrically isolates the transition inner conductor 7 from the support column 5; the bonding wire 8 comprises an inner bonding wire and an outer bonding wire, the inner bonding wire is connected with the transition inner conductor 7 and the chip signal contact 11, and the outer bonding wire is connected with the outer conductor 3 and the chip grounding contact to form a signal transmission channel.
The interconnection/transition structure of the coaxial transmission line and the chip provided by the invention has the following working principle:
the signal is input from the rectangular coaxial transmission line end, propagates forwards in a TEM mode, reaches the transition structure part after being transmitted for a certain distance, the upper part of the outer conductor 3 is cut off to expose the inner conductor 1, the lower part of the outer conductor 3 continues to extend and expand to form a platform which is in full contact with the chip ground 14, and meanwhile, the outer conductor 3 is also connected with the grounding contact of the chip through the bonding wire and then is in reinforced connection with the chip ground 14 through the grounding hole 12 of the chip. At the same time, the lower bottom surface of the transition inner conductor 7 shrinks upwards and is connected with the signal contact 11 of the chip through the bonding wire 8. After passing through the transition structure portion, the signal enters the chip through the chip contact 11 and continues to propagate, it is worth mentioning that the characteristic impedance of the chip contact 11 is generally 50 Ω, and for the convenience of simulation, in the design of the invention, a 50 Ω microstrip line is used for simulating an internal circuit of the chip.
By changing the size of the supporting posts 5, the number of bonding wires 8 and the connection positions between the bonding wires 8 and other components, the electromagnetic characteristics (such as capacitive reactance and inductive reactance) of the transition structure can be adjusted, so that the matching performance between the rectangular coaxial transmission line and the chip is improved. Specifically, in a certain application scenario, the physical characteristics of the structure can be optimized through electromagnetic simulation to meet the required index requirements.
Referring to fig. 1, the interconnection/transition structure of coaxial transmission line and chip according to the present invention includes 3 parts: the transmission line comprises a rectangular coaxial transmission line part, a transition structure part and a chip part, wherein the transition structure part is the core of the whole structure;
referring to fig. 2, the rectangular coaxial transmission line includes an inner conductor 1, a filling medium 2, an outer conductor 3 and an inner conductor photoresist strip 4, wherein the inner conductor photoresist strip 4 is used to fix the inner conductor 1, the filling medium 2 is generally air, and the inner and outer conductors are generally copper.
Referring to fig. 3, the transition structure includes a supporting pillar 5, an isolation strip 6, a transition inner conductor 7, a bonding wire 8 and a chip mounting platform 9; the supporting column 5 extends out from the side wall opposite to the transition inner conductor 7 and plays a supporting role below the transition inner conductor 7; the transition inner conductor 7 and the support column 5 are chamfered to reduce discontinuity; the isolation strips 6 isolate the transition inner conductor 7 from the support columns 5 to prevent signal short circuit; the lower surface of the transition inner conductor 7 is shrunk upwards by a set height so as to leave a space for the isolation strip 6; the bonding wire 8 connects the inner conductor and the chip signal contact 11, and the outer conductor and the chip grounding contact together to form a reliable signal transmission channel.
Referring to fig. 4, fig. 4 shows some structural sections for more intuitively showing the transition structure. For a closed rectangular coaxial transmission line, at the interconnection transition structure, the outer conductor above the closed rectangular coaxial transmission line is opened, the inner conductor is exposed for lapping of the bonding wire, and meanwhile, the lower side of the inner conductor is upwards contracted for a set height so as to leave a space for the photoetching adhesive tape.
Referring to fig. 5, fig. 5 shows a GSG interface adopted by a general chip, where the chip portion includes a signal contact 10, a ground contact 11, a ground via 12, a microstrip line 13, and a chip ground 14, where the ground via 12 is a cylindrical via for connecting the ground contact 11 and the chip ground 14, and the microstrip line 13 is an analog of a signal line inside the chip.
In the chip interconnection/transition structure provided by the invention, the rectangular coaxial transmission line is made of copper, the filling medium in the coaxial line is air, the photoresist strip is made of SU8, the bonding wire 8 adopts standard gold wire with the diameter of 25 μm, the chip base material is gallium arsenide, and the auxiliary metal material on the chip is copper.
The maximum value of the longitudinal dimension of the whole structure is 0.75mm, the maximum dimension of the transverse dimension is 1.8mm, the longitudinal dimension refers to the axial direction along the transmission line, and the transverse dimension refers to the axial direction perpendicular to the transmission line; the cross-sectional dimensions of the coaxial line portion are: the size of the inner cavity of the outer conductor is 0.4mm in width and 0.3mm in height; the size of the inner conductor is 0.176mm wide multiplied by 0.1mm high, the size of the photoresist strip is 0.6mm long multiplied by 0.15mm wide multiplied by 0.02mm high, the length of the exposed segment of the coaxial wire inner conductor is 0.13mm, the height of the cross section of the coaxial wire inner conductor is reduced to 0.06mm, and the tail end of the coaxial wire inner conductor is chamfered by a 0.05mm circular arc.
The horizontal distance between coaxial line inner conductor end and its just right chip carrying platform is 0.05mm, and support column 5 stretches out from the lateral wall center of chip carrying platform, and the size is 0.15mm 0.12mm, and its end is made 0.075mm circular arc chamfer, and support column 5 is located the rectangular cavity that forms between the coaxial line inner chamber, makes 0.02mm chamfer.
The thickness of the chip adopted by the invention is 0.07mm, the sizes of the two grounding contacts are 0.12mm multiplied by 0.08mm, the diameter of the grounding through hole on the chip is 0.07mm, the relative distance between the two through holes is 0.28mm, and the width of the microstrip line is 0.07 mm.
Through simulation analysis, the chip interconnection/transition structure disclosed by the invention can show good signal transmission performance at 75-110GHz of a microwave frequency band, and meanwhile, the bonding part has very high mechanical structure strength.
The frequency response characteristic simulation results of the chip interconnection/transition structure provided by the invention are shown in fig. 6 and 7, the S11 and S22 responses of the structure are lower than-20 dB in a microwave frequency range of 75-110GHz, and the chip interconnection/transition structure shows excellent impedance matching performance; s21 response is higher than-0.22 dB, namely, insertion loss is lower than 0.22dB, and excellent electromagnetic performance is shown.
The above is a detailed description of the present invention with reference to specific preferred embodiments, and it should not be considered that the present invention is limited to the specific embodiments, but that the present invention may be implemented by those skilled in the art without departing from the spirit of the present invention.
Claims (7)
1. An interconnection/transition structure of a coaxial transmission line and a chip is characterized by comprising a support pillar (5), an isolation strip (6), a transition inner conductor (7), a bonding wire (8) and a chip carrying platform (9); the chip part is arranged on the chip carrying platform (9), the supporting column (5) is positioned on the side face of the chip part, the supporting column (5) extends out of the side wall of the transition inner conductor (7), and a supporting effect is achieved below the transition inner conductor (7); the isolation strip (6) is arranged between the transition inner conductor (7) and the supporting column (5), and the transition inner conductor (7) is electrically isolated from the supporting column (5) by the isolation strip (6); the bonding wire (8) comprises an inner bonding wire and an outer bonding wire, the inner bonding wire is connected with the transition inner conductor (7) and the chip signal contact (11), and the outer bonding wire is connected with the outer conductor (3) and the chip grounding contact to form a signal transmission channel; the distance between the lower surface of the transition inner conductor (7) and the chip carrying platform (9) is the sum of the thickness of the isolation strip (6) and the height of the supporting column (5); a step extends outwards from the outer conductor of the coaxial transmission line to serve as a chip carrying platform (9), and two sides of the outer conductor are connected to a grounding contact of a chip through bonding wires and then connected to a chip ground (14) through a grounding through hole (12).
2. The interconnection/transition structure of coaxial transmission line and chip according to claim 1, characterized in that the transition inner conductor (7) and the supporting column (5) are provided with rounded corner structures at their end faces.
3. The interconnection/transition structure of coaxial transmission line and chip according to claim 1, characterized in that the bonding wire (8) is a standard gold wire with a diameter of 25 μm.
4. The interconnection/transition structure of the coaxial transmission line and the chip according to claim 1, wherein the coaxial transmission line comprises an inner conductor (1), a filling medium (2), an outer conductor (3) and an inner conductor photoresist strip (4), the filling medium is arranged between the inner conductor (1) and the outer conductor (3), the inner conductor photoresist strip (4) is used for fixing the inner conductor (1), the inner conductor (1) is connected with the transition inner conductor (7), the filling medium (2) is air, the inner conductor photoresist strip (4) is made of photoresist, and the inner conductor and the outer conductor are made of copper.
5. The interconnection/transition structure of coaxial transmission line and chip of claim 1, wherein the coaxial transmission line has a rectangular or circular cross-section.
6. Interconnection/transition structure of coaxial transmission line and chip according to claim 1, characterized in that the bonding wires (8) are spaced from the chip connection ends by the same distance as the interface contacts of the chip.
7. The interconnection/transition structure of coaxial transmission line and chip of claim 1, wherein the maximum longitudinal dimension is 0.75mm, the maximum transverse dimension is 1.8mm, and the horizontal distance between the end of the coaxial line inner conductor and the chip carrying platform opposite to the end is 0.05 mm.
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