CN111162050A - Micro-coaxial bonding interface - Google Patents
Micro-coaxial bonding interface Download PDFInfo
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- CN111162050A CN111162050A CN201911416253.6A CN201911416253A CN111162050A CN 111162050 A CN111162050 A CN 111162050A CN 201911416253 A CN201911416253 A CN 201911416253A CN 111162050 A CN111162050 A CN 111162050A
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- inner conductor
- insulating plate
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- cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a micro-coaxial bonding interface, which belongs to the technical field of chip connection structures and comprises an outer conductor, an inner conductor, an insulating plate and a support body; wherein, the outer conductor is provided with a through cavity; the inner conductor is arranged in the through cavity in a suspended mode, and one end of the inner conductor is used for being bonded with the bonding chip through a bonding wire; the insulation plate is arranged in the through cavity and is lapped with the bonding end of the inner conductor, one end of the insulation plate extends out of the through cavity, and the extending end of the insulation plate is fixedly connected with the side wall of the outer conductor; the supporter is arranged in the through cavity and is positioned right below the insulating plate, and the top end of the supporter is supported on the bottom surface of the insulating plate. According to the micro-coaxial bonding interface provided by the invention, the support body is arranged right below the insulating plate, so that when bonding operation is carried out on the inner conductor, the problem that the inner conductor is bent downwards or falls down due to bonding pressing can be avoided, and the high bonding strength of a bonding point is ensured, thereby ensuring the bonding quality and ensuring the stable and reliable signal transmission of the bonding interface.
Description
Technical Field
The invention belongs to the technical field of chip connection structures, and particularly relates to a micro-coaxial bonding interface.
Background
At present, when chips are installed and connected, particularly GaAs (gallium arsenide) chips, a micro-coaxial interface is generally adopted for bonding, the micro-coaxial interface consists of a tubular outer conductor and an inner conductor which is arranged in the outer conductor in an insulating way, because the inner conductor and the outer conductor need to be insulated, the inner conductor needs to be suspended and isolated in the outer conductor, because the inner conductor needs to be bonded and connected with the GaAs chips, when bonding wires are bonded on the inner conductor, under the bonding pressing force, because the inner conductor is suspended in the outer conductor only depending on the connection in the micro-coaxial structure, the inner conductor is easy to bend downwards or fall downwards, thereby increasing the bonding difficulty, and because enough bonding pressing force cannot be applied, the bonding strength of bonding points is low, the bonding quality is affected, even when the inner conductor cannot be restored to the original position due to too large downward bending amplitude, the electrical performance of the inner conductor is affected.
Disclosure of Invention
The invention aims to provide a micro-coaxial bonding interface, which aims to solve the problem that the electrical performance is influenced due to low strength of the bonding interface in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: providing a micro-coaxial bonding interface comprising:
an outer conductor provided with a through cavity;
the inner conductor is suspended in the through cavity, and one end of the inner conductor is used for being bonded with the bonding chip through a bonding wire;
the insulating plate is arranged in the through cavity and is lapped with the bonding end of the inner conductor, one end of the insulating plate extends out of the through cavity, and the extending end of the insulating plate is fixedly connected with the side wall of the outer conductor;
the supporting body is arranged in the through cavity and located right below the insulating plate, and the top end of the supporting body is supported on the bottom surface of the insulating plate.
As another embodiment of the present application, an inductance matching section is disposed on the inner conductor at a position away from the bonding end thereof, and the inductance matching section is used for forming an inductance loading effect on the inner conductor.
As another embodiment of the present application, the width of the inductive matching section is smaller than the width of the inner conductor.
As another embodiment of the present application, the outer conductor, the inner conductor, the insulating plate, and the support are integrally formed by a MEMS (Micro-Electro-Mechanical System) process.
According to another embodiment of the application, a concave surface is arranged at the lap joint position of the inner conductor and the insulating plate, the insulating plate is embedded in the concave surface, and the bottom surface of the insulating plate is flush with the bottom surface of the inner conductor.
As another embodiment of the present application, the thickness of the insulating plate is less than or equal to 20 μm.
As another embodiment of this application, the insulating board level sets up, and the insulating board is perpendicular to the both ends of passing through the chamber axis direction and imbeds respectively in the lateral wall of outer conductor.
As another embodiment of the application, through holes are respectively formed in two ends of the insulating plate, and fixing columns correspondingly inserted into the through holes are respectively arranged on two side walls of the outer conductor.
As another embodiment of the present application, the outer conductor is square, and the through cavity is a square through hole.
As another embodiment of the present application, the end of the outer conductor where the insulating plate is disposed is a step structure, and the step surface of the step structure is flush with the top surface of the inner conductor.
The micro coaxial bonding interface provided by the invention has the beneficial effects that: compared with the prior art, the micro-coaxial bonding interface has the advantages that the inner conductor is arranged in the through cavity of the outer conductor in a suspended mode, the insulation plates with two ends embedded in the two side walls of the outer conductor are used for lap joint supporting, the supporting body is arranged right below the insulation plates, accordingly, the supporting strength of the insulator for the inner conductor is improved, when the bonding line is bonded on the inner conductor, the problem that the inner conductor is bent downwards or falls downwards due to bonding pressing can be avoided, the bonding strength of a bonding point is high, the bonding quality is guaranteed, and the electrical performance of the bonding interface is stable and reliable.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic perspective view of a micro-coaxial bonding interface according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of a micro-coaxial bonding interface according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view taken along line A-A of FIG. 2;
fig. 4 is a schematic sectional view taken along line B-B in fig. 3.
In the figure: 1. an outer conductor; 10. a cavity is communicated; 11. a step structure; 12. fixing a column; 2. an inner conductor; 20. an inductance matching section; 21. a recessed surface; 3. an insulating plate; 30. a through hole; 4. a support body; 5. a bonding wire; 6. bonding a chip; 7. a support material.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to fig. 3, a micro-coaxial bonding interface according to the present invention will be described. The micro coaxial bonding interface comprises an outer conductor 1, an inner conductor 2, an insulating plate 3 and a support body 4; wherein, the outer conductor 1 is provided with a through cavity 10; the inner conductor 2 is suspended in the through cavity 10; one end of the inner conductor 2 is used for being bonded with a bonding chip 6 through a bonding wire 5; the insulation plate 3 is arranged in the through cavity 10 and is lapped with the bonding end of the inner conductor 2, one end of the insulation plate extends out of the through cavity 10, and the extending end of the insulation plate is fixedly connected with the side wall of the outer conductor 1; the supporting body 4 is arranged in the through cavity 10 and is positioned right below the insulating plate 3, and the top end of the supporting body 4 is supported on the bottom surface of the insulating plate 3.
The invention provides an explanation of a micro coaxial bonding interface, which comprises the following steps:
the inner conductor 2 is arranged in the through cavity 10 in a suspended mode, and the inner conductor 2 is not in contact with the bonding chip 6, so that the material of the mounting surface of the bonding chip 6 is not limited, and the application range of the bonding interface can be enlarged; the inner conductor 2 is supported by the insulating plate 3, so that the impedance influence on a bonding interface can be avoided; it should be noted that the length of the bonding wire 5 can affect the applicable frequency band of the bonding interface, and in the bonding interface of the present invention, because the extending directions of the inner conductor 2 and the outer conductor 1 are the same, and the horizontal state can be maintained, the inner conductor 2 can be in the same plane with the bonding chip 6 (the supporting material 7 is usually added below), so as to ensure that the bonding of the inner conductor 2 and the bonding chip 6 can be realized by using the shorter bonding wire 5, and thus, the bonding interface of the present invention can be ensured to be applicable to the millimeter wave frequency band; the support body 4 is located on the bottom wall of the through cavity 10 and supported on the bottom surface of the insulating plate 3, thereby ensuring the isolation between the outer conductor 1 and the inner conductor 2 through the insulating plate 3 and improving the supporting strength of the insulating plate 3 on the inner conductor 2.
Compared with the prior art, the micro-coaxial bonding interface provided by the invention has the advantages that the inner conductor 2 is arranged in the through cavity 10 of the outer conductor 1 in a suspended mode, the insulation plates 3 with two ends embedded in two side walls of the outer conductor 1 are used for lap joint support, and the support body 4 is arranged right below the insulation plates 3, so that the support strength of the insulation body on the inner conductor 2 is improved, when the bonding wire 5 is bonded on the inner conductor 2, the problem that the inner conductor 2 bends downwards or falls down due to bonding pressing can be avoided, the bonding strength of a bonding point is high, the bonding quality is ensured, and the signal transmission of the bonding interface is stable and reliable.
Referring to fig. 1 and 2, an inductance matching section 20 is disposed on the inner conductor 2 at a position away from the bonding end, and the inductance matching section 20 is used for forming an inductance loading effect on the inner conductor 2.
It should be noted that, because a metal-dielectric-metal capacitor structure is formed among the support 4, the insulating plate 3 and the inner conductor 2, a capacitor loading effect is generated, and the high-frequency performance of the bonding interface is affected, and inductance is inevitably introduced into a bonding wire between the inner conductor 2 and the bonding chip 6 in a millimeter wave frequency band, but the bonding interface of the present invention forms an inductor-capacitor-inductor structure by arranging an inductor matching section 20 on the inner conductor 2, and changes the size of the loading capacitor by adjusting the shape of the inner conductor 2 at a position right above the support 4 and the support 4, so that the inductor-capacitor-inductor structure reaches a characteristic impedance matching state in the millimeter wave frequency band, and the high-frequency performance of the bonding interface is improved.
In the present embodiment, referring to fig. 2, the width of the inductance matching section 20 is smaller than the width of the inner conductor 2. The inner conductor 2 is narrowed at the inductance matching section 20, so that an inductance loading effect is formed on the inner conductor 2, and the inductance loading value can be changed by adjusting the width of the inductance matching section 20, so that the inductance-capacitance-inductance structure reaches a characteristic impedance matching state in a millimeter wave frequency band.
As a specific embodiment of the present invention, the outer conductor 1, the inner conductor 2, the insulating plate 3, and the support 4 are integrally formed by an MEMS process. It should be noted that the MEMS Process (micro-fabrication Process), which is a generic term for micro-structure processing technology down to nanometer scale and up to millimeter scale, originates from semiconductor and microelectronic processes, and is a micro-fabrication technology for fabricating complex three-dimensional features by using photolithography, epitaxy, thin film deposition, oxidation, diffusion, implantation, sputtering, evaporation, etching, scribing, and packaging as basic Process steps.
The bonding interface structure can be manufactured by layering through an MEMS (micro electro mechanical systems) process, the patterns of the outer conductor 1, the inner conductor 2, the insulating plate 3 and the support body 4 corresponding to the height of each layer are respectively processed on each layer, and the bonding interface structure is formed by laminating multiple layers into an integral structure.
In this embodiment, referring to fig. 3, a recessed surface 21 is disposed at a position where the inner conductor 2 overlaps the insulating plate 3, the insulating plate 3 is embedded in the recessed surface 21, and a bottom surface of the insulating plate 3 is flush with a bottom surface of the inner conductor 2. The insulation board 3 is accommodated through the concave surface 21, so that the insulation board 3 and the bottom of the inner conductor 2 are positioned on the same processing layer, and the MEMS process is conveniently carried out.
In the present embodiment, the thickness of the insulating plate 3 is less than or equal to 20 μm. It should be noted that, when the thickness of the insulating plate 3 is large, a large capacitance loading effect is generated by a metal-dielectric-metal capacitor structure formed by the insulating plate 3, the supporting body 4 and the inner conductor 2, which may cause deterioration of the high-frequency performance of the bonding interface, and therefore, setting the insulating plate 3 to be less than or equal to 20 μm can ensure that the bonding interface can prevent the insulating plate 3 from excessively affecting the high-frequency performance of the bonding interface, so that the millimeter wave frequency band can be applied.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 3 and 4, the insulating plate 3 is horizontally disposed, and two ends of the insulating plate perpendicular to the axial direction of the through cavity 10 are respectively embedded in the sidewall of the outer conductor.
In this embodiment, referring to fig. 4, through holes 30 are respectively formed at two ends of the insulating plate 3, and fixing posts 12 inserted into the through holes 30 are respectively formed on two side walls of the outer conductor 1. When the MEMS is processed, the patterns of the through holes 30 at the two ends of the insulating plate 3 are processed, and the structure of the fixing column 12 is processed in the patterns, so that the insulating plate 3 can be firmly embedded in the two side walls of the outer conductor 1 after the bonding interface is integrally processed, and the strength of the insulating plate 3 is improved.
As a specific embodiment of the present invention, the support 4 is a copper support 4. Usually, the outer conductor 1 and the inner conductor 2 are both made of copper-based materials, and the supporting body 4 made of the same material as the outer conductor 1 is arranged, so that on one hand, the processing technology is convenient, and on the other hand, the electrical property of a bonding interface is prevented from being influenced by adding other materials.
Referring to fig. 1 and 2, as a specific implementation manner of the embodiment of the present invention, the outer conductor 1 is square, and the through cavity 10 is a square through hole 30. The square structure is convenient to process and manufacture.
In the present embodiment, referring to fig. 1 and fig. 2, one end of the outer conductor 1, which is provided with the insulating plate 3, is a step structure 11, and a step surface of the step structure 11 is flush with a top surface of the inner conductor 2. The step surface of the step structure 11 is flush with the top surface of the inner conductor 2, so that the bonding position of the inner conductor 2 can be exposed, and the bonding operation can be conveniently performed.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A micro-coaxial bonding interface, comprising:
an outer conductor provided with a through cavity;
the inner conductor is suspended in the through cavity; one end of the inner conductor is used for being bonded with the bonding chip through a bonding wire;
the insulation plate is arranged in the through cavity and is lapped with the bonding end of the inner conductor; one end of the insulating plate extends out of the through cavity, and the extending end is fixedly connected with the side wall of the outer conductor;
the supporting body is arranged in the through cavity and located right below the insulating plate, and the top end of the supporting body is supported on the bottom surface of the insulating plate.
2. A micro-coaxial bonding interface as recited in claim 1, wherein: an inductance matching section is arranged on the inner conductor at a position far away from the bonding end of the inner conductor, and the inductance matching section is used for forming an inductance loading effect on the inner conductor.
3. A micro-coaxial bonding interface as recited in claim 2, wherein: the width of the inductance matching section is smaller than that of the inner conductor.
4. A micro-coaxial bonding interface as recited in claim 1, wherein: the outer conductor, the inner conductor, the insulating plate and the support body are integrally formed through an MEMS process.
5. A micro-coaxial bonding interface as recited in claim 4, wherein: the inner conductor is provided with a concave surface at the lap joint position of the insulating plate, the insulating plate is embedded in the concave surface, and the bottom surface of the insulating plate is flush with the bottom surface of the inner conductor.
6. A micro-coaxial bonding interface as recited in claim 5, wherein: the thickness of the insulating plate is less than or equal to 20 μm.
7. A micro-coaxial bonding interface as recited in claim 4, wherein: the insulating plate is horizontally arranged, and two ends of the insulating plate, which are perpendicular to the axial direction of the through cavity, are respectively embedded into the side wall of the outer conductor.
8. A micro-coaxial bonding interface as recited in claim 7, wherein: the insulation board is provided with a through hole, and the outer conductor is provided with a fixing column which is correspondingly inserted into the through hole.
9. A micro-coaxial bonding interface according to any one of claims 1-8, wherein: the outer conductor is square, and the through cavity is a square through hole.
10. A micro-coaxial bonding interface as recited in claim 9, wherein: the outer conductor is provided with the one end of insulation board is the stair structure, the stair face of stair structure with the top surface parallel and level of inner conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911416253.6A CN111162050B (en) | 2019-12-31 | 2019-12-31 | Micro-coaxial bonding interface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911416253.6A CN111162050B (en) | 2019-12-31 | 2019-12-31 | Micro-coaxial bonding interface |
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| Publication Number | Publication Date |
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| CN111162050A true CN111162050A (en) | 2020-05-15 |
| CN111162050B CN111162050B (en) | 2021-09-07 |
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| CN201911416253.6A Active CN111162050B (en) | 2019-12-31 | 2019-12-31 | Micro-coaxial bonding interface |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113381154A (en) * | 2021-05-20 | 2021-09-10 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113540915A (en) * | 2021-07-19 | 2021-10-22 | 赛莱克斯微系统科技（北京）有限公司 | Micro-coaxial radio frequency transmission line and GSG (ground satellite System) adapter thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036299A (en) * | 1988-04-01 | 1989-10-11 | 中国计量科学研究院 | Thermoelectric converter and manufacture method thereof |
| JP2002198129A (en) * | 2000-12-25 | 2002-07-12 | Nec Corp | Converter of coaxial-strip conductor |
| JP2019087352A (en) * | 2017-11-06 | 2019-06-06 | 株式会社明電舎 | coaxial cable |
-
2019
- 2019-12-31 CN CN201911416253.6A patent/CN111162050B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036299A (en) * | 1988-04-01 | 1989-10-11 | 中国计量科学研究院 | Thermoelectric converter and manufacture method thereof |
| JP2002198129A (en) * | 2000-12-25 | 2002-07-12 | Nec Corp | Converter of coaxial-strip conductor |
| JP2019087352A (en) * | 2017-11-06 | 2019-06-06 | 株式会社明電舎 | coaxial cable |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113381154A (en) * | 2021-05-20 | 2021-09-10 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113381154B (en) * | 2021-05-20 | 2022-07-12 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113540915A (en) * | 2021-07-19 | 2021-10-22 | 赛莱克斯微系统科技（北京）有限公司 | Micro-coaxial radio frequency transmission line and GSG (ground satellite System) adapter thereof |
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|---|---|
| CN111162050B (en) | 2021-09-07 |
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