CN115986353A - Coaxial microstrip conversion structure - Google Patents
Coaxial microstrip conversion structure Download PDFInfo
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- CN115986353A CN115986353A CN202211740704.3A CN202211740704A CN115986353A CN 115986353 A CN115986353 A CN 115986353A CN 202211740704 A CN202211740704 A CN 202211740704A CN 115986353 A CN115986353 A CN 115986353A
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Abstract
The application provides a coaxial microstrip transition structure, which comprises a radio frequency insulator, an insulator probe, a coaxial air cavity, a microstrip line and a metal carrier, wherein the microstrip line comprises a microstrip line dielectric slab arranged on the metal carrier and an impedance gradual change central conductor arranged on the microstrip line dielectric slab; one end of the radio frequency insulator is flush with the side wall of one end of the metal carrier, and the other end of the radio frequency insulator is positioned on the metal carrier through the coaxial air cavity; the insulator probe penetrates through the central axis of the radio frequency insulator and extends from two ends of the radio frequency insulator, wherein one end of the insulator probe can be connected to the coaxial connector, and the other end of the insulator probe penetrates through the coaxial air cavity to form air coaxiality and is lapped on the impedance gradual change central conductor of the microstrip line. Therefore, the requirements of low loss, ultra wide band, simple structure, easy processing and the like can be met.
Description
Technical Field
The application relates to the technical field of microwave millimeter wave radio frequency, in particular to a coaxial microstrip conversion structure.
Background
In a millimeter wave system, the connection between the radio frequency modules mostly adopts a coaxial structure, and the coaxial connector and the coaxial cable have the advantages of small volume, large working bandwidth, remoldable transmission path and the like, and are widely applied to long-distance transmission in the millimeter wave system. Inside the radio frequency module, the coaxial connector can be connected with the microstrip circuit through the radio frequency insulator. With the development of rf modules, high performance is required and miniaturization and lightweight design are also required. Microstrip lines are the most popular planar transmission lines at present, are realized by adopting printed circuit boards, are very easy to integrate with other passive and active millimeter wave devices, and are the best media of microwave and millimeter wave hybrid integrated circuits. Millimeter wave radio frequency circuits, especially those with operating frequencies above 10GHz, employ a large number of functional circuits in the form of bare chips, such as amplifiers, mixers, filters, phase shifters, etc. The millimeter wave radio frequency circuit is assembled and produced with high precision by using a micro-assembly process, so that in a very small radio frequency module unit, the number of bare chip devices on a radio frequency path is dozens of bare chip devices. This also presents a significant challenge to standing waves at the ports of the mmwave rf module. At present, ultra-wideband matching is difficult to achieve, a coaxial microstrip conversion structure with the characteristics of large working bandwidth, low insertion loss, high transmission efficiency and the like is designed, and the coaxial microstrip conversion structure is an important ring in the development of millimeter wave radio frequency module circuits.
Disclosure of Invention
The application provides a coaxial microstrip conversion structure with low loss, ultra wide band, simple structure and easy processing.
The application provides a coaxial microstrip transition structure, includes: the micro-strip line comprises a micro-strip line dielectric slab arranged on the metal carrier and an impedance gradual change central conductor arranged on the micro-strip line dielectric slab; one end of the radio frequency insulator is flush with the side wall of one end of the metal carrier, and the other end of the radio frequency insulator is positioned on the metal carrier through the coaxial air cavity; the insulator probe penetrates through the central axis of the radio frequency insulator and extends from two ends of the radio frequency insulator, wherein one end of the insulator probe can be connected to a coaxial connector, and the other end of the insulator probe penetrates through the coaxial air cavity to form air coaxiality and is lapped on the impedance gradual change central conductor of the microstrip line.
Optionally, the impedance gradual change central conductor includes an impedance gradual change section and an impedance fixed section connected to the impedance gradual change section, where the impedance gradual change section is disposed close to the insulator probe relative to the impedance fixed section, and the impedance gradual change section is overlapped with the insulator probe.
Optionally, the impedance of the impedance gradual change section is greater than the impedance of the impedance fixed section, wherein the impedance of the impedance fixed section is 50 ohms.
Optionally, a gap is formed between one end of the impedance gradual change central conductor, which is relatively close to the insulator probe, and the side wall of the coaxial air cavity.
Optionally, a gap is formed between one end of the microstrip line dielectric slab, which is relatively close to the insulator probe, and the side wall of the coaxial air cavity.
Optionally, the length of the impedance gradual change central conductor is within a range of 0.01mm to 0.2mm from the length of the microstrip line dielectric slab.
Optionally, one end of the impedance-gradient central conductor, which is relatively close to the insulator probe, is welded to the insulator probe.
Optionally, the microstrip line further includes a bottom metal layer disposed at the bottom of the microstrip line dielectric slab, and the microstrip line dielectric slab is welded to the metal carrier through the bottom metal layer.
Optionally, the microstrip line dielectric plate is a high-frequency dielectric plate.
Optionally, the insulating medium of the radio frequency insulator is made of glass.
Optionally, the microstrip line is a copper-clad strip on the surface of the microstrip line dielectric plate.
The coaxial microstrip transform structure of this application embodiment, it is coaxial to pass coaxial air chamber formation air through setting up the insulator probe to the overlap joint is on the impedance gradual change central conductor of microstrip line, can compensate the mismatch of introducing by the electromagnetic wave mode transition, for the mismatch that the discontinuity of satisfying introduction such as assembly process security and reliability brought, realizes millimeter wave signal's high efficiency transmission, in order to satisfy the needs of millimeter wave radio frequency module to port conversion's low-loss, ultra wide band, simple structure workable etc..
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a coaxial microstrip transition structure according to the present application.
Fig. 2 is a schematic diagram illustrating a view angle of the coaxial microstrip transition structure shown in fig. 1.
Fig. 3 is a schematic diagram illustrating another view angle of the coaxial microstrip transition structure shown in fig. 1.
Fig. 4 is a graph showing simulation results of insertion loss of the coaxial microstrip transition structure shown in fig. 1.
Fig. 5 is a graph showing simulation results of the input standing wave of the coaxial microstrip transition structure shown in fig. 1.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the description and in the claims does not indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms a, an, etc. do not denote a limitation of quantity, but rather denote the presence of at least one. If only one is referred to, it will be described separately. "plurality" or "a number" means two or more. Unless otherwise indicated, "front", "rear", "lower" and/or "upper" and the like are for convenience of description and are not limited to one position or one spatial orientation. The word "comprising" or "comprises", and the like, means that the element or item listed after "comprises" or "comprising" is inclusive of the element or item listed after "comprising" or "comprises", and the equivalent thereof, and does not exclude additional elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
When the millimeter wave signal is transmitted in the coaxial microstrip conversion structure, the millimeter wave signal is converted from a coaxial transmission line TEM mode to a 50 ohm microstrip line quasi-TEM mode, wherein the millimeter wave signal also has discontinuities introduced by an air gap between the microstrip line and the side wall of the metal carrier, impedance gradual change central conductor avoidance, insulator probe welding of the microstrip line and the like, and the transmission characteristic of the millimeter wave signal is easy to rapidly deteriorate along with the increase of frequency. The current typical coaxial microstrip transition structure is in the form of adding a coaxial air cavity, and forming air coaxial with the insulator probe. One of the big limitations of this structure is that less optimization variables are introduced (radius and length of the coaxial air cavity) and ultra wide band matching is difficult to achieve. The coaxial microstrip conversion structure with the characteristics of large working bandwidth, low insertion loss, high transmission efficiency and the like is designed, and is an important ring in the development of millimeter wave radio frequency module circuits.
Therefore, the coaxial microstrip conversion structure is low in loss, ultra wide band, simple in structure and easy to process. The coaxial microstrip conversion structure comprises a radio frequency insulator, an insulator probe, a coaxial air cavity, a microstrip line and a metal carrier, wherein the microstrip line comprises a microstrip line dielectric slab arranged on the metal carrier and an impedance gradual change central conductor arranged on the microstrip line dielectric slab; one end of the radio frequency insulator is flush with the side wall of one end of the metal carrier, and the other end of the radio frequency insulator is positioned on the metal carrier through the coaxial air cavity; the insulator probe penetrates through the central axis of the radio frequency insulator and extends from two ends of the radio frequency insulator, wherein one end of the insulator probe can be connected to the coaxial connector, and the other end of the insulator probe penetrates through the coaxial air cavity to form air coaxiality and is lapped on the impedance gradual change central conductor of the microstrip line. So set up, pass coaxial air cavity overlap joint on the impedance gradual change central conductor of microstrip line through setting up the insulator probe, can compensate by the mismatch of electromagnetic wave mode conversion introduction, for satisfying the mismatch that the discontinuity of introduction such as assembly process security and reliability brought, realize the high efficiency transmission of millimeter wave signal to satisfy the demand of low loss, ultra wide band, simple structure workable etc. of millimeter wave radio frequency module to port conversion.
Fig. 1 is a schematic structural diagram of an embodiment of a coaxial microstrip transition structure 1 according to the present application. Fig. 2 is a schematic structural diagram illustrating a view angle of the coaxial microstrip transition structure 1 shown in fig. 1. Fig. 3 is a schematic structural diagram of another view angle of the coaxial microstrip transition structure 1 shown in fig. 1. As shown in fig. 1 to 3, the coaxial microstrip transition structure 1 includes a radio frequency insulator 20, an insulator probe 30, a coaxial air cavity 201, a microstrip line 40, and a metal carrier 10. The metal carrier 10 serves as a fixing carrier for fixing the radio frequency insulator 20 and the microstrip line 40. The microstrip line 40 comprises a microstrip line dielectric board 401 disposed on the metal carrier 10 and a dielectric layer
The central conductor 402 is gradually changed in impedance of the microstrip dielectric plate 401. One end of the radio frequency insulator 20 is flush with one end side wall of the metal carrier 5, and the other end of the radio frequency insulator 20 is positioned on the metal carrier 10 through the coaxial air cavity 201. The insulator probe 30 penetrates through the central axis of the radio frequency insulator 20 and extends at two ends of the radio frequency insulator 20, wherein one end of the insulator probe 30 can be connected to a coaxial connector (not shown), and the other end of the insulator probe 30 passes through the coaxial air cavity 201 to form an air coaxial and is lapped on the impedance gradual change central conductor 402 of the microstrip line 40.
In the embodiment shown in fig. 1, an insulator probe 30 is inserted through the radio frequency insulator 20. The central axis of the insulator probe 30 is arranged coaxially with the central axis of the radio frequency insulator 20. One end of the insulator probe 30, which is relatively close to the microstrip line 40, forms an air coaxial with the coaxial air cavity 201, and extends to the outside of the radio frequency insulator 20 through the coaxial air cavity 201. An end of the graded-impedance center conductor 402 relatively close to the insulator probe 30 and
the insulator probe 30 is connected. The insulator probe 30 extends through the central axis of the radio frequency insulator 20 and extends at both ends of the radio frequency 5 insulator 20. In some embodiments, the insulator probe 30 may extend to the left side of the radio frequency insulator 20 for connection with a 2.92mm coaxial connector. The insulator probe 30 may extend to the right of the radio frequency insulator 20, overlap the graded impedance center conductor 402 through the coaxial air cavity 201, and connect to the graded impedance center conductor 402. In the present embodiment, the left end of the radio frequency insulator 20 is connected with the metal carrier 10
The left side wall is flush and the right end of the radio frequency insulator 20 is positioned by the coaxial air cavity 201 and sintered on the insulating hole 1030. When the coaxial microstrip conversion structure 1 works, millimeter wave signals pass through the radio frequency insulator 20 and the insulator probe 30
Coaxial with the air comprised by the coaxial air cavity 201, bridging over the impedance graded center conductor 402. Wherein the insulator probe 30 and the air coaxial, impedance-graded center conductor 402 formed by the coaxial air cavity 201 perform an impedance matching function. Thus, insertion loss can be reduced and standing waves can be improved. Can compensate for introduction of electromagnetic wave mode transition
The mismatch caused by the discontinuity introduced for meeting the safety and reliability of the assembly process, and the like, and the high-efficiency transmission of 5 millimeter wave signals is realized so as to meet the requirements of low loss and ultra-wide port conversion of the millimeter wave radio frequency module
Simple structure and easy processing.
In the embodiment shown in fig. 1 to 3, the microstrip line dielectric board 401 is a high frequency dielectric board. The high-frequency dielectric plate is a composite fiber material plate, the model is Rogers5880, the thickness is 0.254mm, and the dielectric constant is 2.2. In the embodiment shown in fig. 1 to 3, the insulating medium of the rf insulator 20 is made of glass. In the embodiment shown in fig. 1 to 3, the metal carrier 10 is made of gold-plated alloy. In some embodiments, the metal carrier 10 is a gold-plated aluminum alloy material, a gold-plated copper alloy material, or a silver-plated alloy material, but is not limited thereto. In the embodiment shown in fig. 1 to 3, the microstrip line is a copper-clad strip on the surface of the microstrip line dielectric slab 401. In the embodiment shown in fig. 1 to 3, the outer surface of the radio frequency insulator 20 is plated with a gold layer or a tin layer or a silver layer, and is connected to the metal carrier 10. In the embodiment shown in fig. 1-3, the outer surface of the insulator probe 30 is plated with a gold or tin or silver layer and is connected to the impedance grading center conductor 402. In this embodiment, the insulating medium of the radio frequency insulator 20 is Glass7070, the dielectric constant is 4.1, the diameter of the radio frequency insulator 20 is 1.93mm, the diameter of the insulator probe 30 is 0.3mm, and gold layers are plated on the outer surfaces of the radio frequency insulator 20 and the insulator probe 30, so as to facilitate the welding of the radio frequency insulator 20 and the metal carrier 10, and the welding of the insulator probe 30 and the impedance gradient central conductor 402. In use, the radio frequency insulator 20 can be designed with tolerance dimensional accuracy to reduce discontinuities introduced by assembly.
In the embodiment shown in fig. 1-3, the graded-impedance center conductor 402 includes a graded-impedance section 403 and a fixed-impedance section 404 connected to the graded-impedance section 403, the graded-impedance section 403 is disposed adjacent to the insulator probe 30 relative to the fixed-impedance section 404, and the graded-impedance section 403 overlaps the insulator probe 30. In the embodiment shown in fig. 1 to 3, the impedance of the gradual impedance transition 403 is greater than the impedance of the fixed impedance segment 404, wherein the impedance of the fixed impedance segment 404 is 50 ohms. When the coaxial microstrip transition structure 1 works, millimeter wave signals are transmitted to the 50-ohm impedance fixing section 404 through the air coaxial line formed by the radio frequency insulator 20, the insulator probe 30 and the coaxial air cavity 201, the insulator probe 30 connected to the impedance gradual change central conductor 402 in an overlapping mode, and the impedance gradual change section 403 of the impedance gradual change central conductor 402, wherein the air coaxial line formed by the insulator probe 30 and the coaxial air cavity 201 and the microstrip line impedance gradual change section play an impedance matching role. By the arrangement, the coaxial air cavity 201 and the impedance transition section 403 of the impedance transition central conductor 402 are introduced for impedance matching, and more optimization variables are introduced to realize efficient transmission of ultra-wideband millimeter wave signals.
In the embodiment shown in fig. 1-3, there is a gap between the end of the graded impedance center conductor 402 relatively close to the insulator probe 30 and the sidewall of the coaxial air cavity 201. By the arrangement, requirements on safety and reliability of an assembly process are fully considered, and the situation that the impedance gradual change central conductor 402 is easy to generate short circuit when the radio frequency insulator 20 is welded or the insulator probe 30 is welded is avoided or reduced. Therefore, a gap with enough margin is formed between one end of the impedance gradual change central conductor 402 relatively close to the insulator probe 30 and the side wall of the coaxial air cavity 201 to avoid the impedance gradual change central conductor, and the impedance gradual change central conductor is safe and reliable.
In the embodiment shown in fig. 1 to 3, a gap is formed between one end of the microstrip dielectric plate 401 relatively close to the insulator probe 30 and the sidewall of the coaxial air cavity 201. In some embodiments, the microstrip dielectric slab 401 has a dimension ranging from 0.05mm to 0.1mm from the sidewall of the coaxial air cavity 201 at an end relatively close to the insulator probe 30. In some embodiments, the microstrip dielectric plate 401 has a dimension between an end of the microstrip dielectric plate 401 relatively close to the insulator probe 30 and a sidewall of the coaxial air cavity 201 of 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm, or 0.1mm. With the arrangement, the requirements on the safety and the reliability of the assembly process are fully considered, the situation that the microstrip line dielectric plate 401 exceeds the size of the metal carrier 10 and is difficult to mount is avoided or reduced, and the situation that the microstrip line dielectric plate 401 and the metal carrier 10 are short-circuited is avoided or reduced. Therefore, a gap with enough margin is formed between one end of the microstrip dielectric plate 401 relatively close to the insulator probe 30 and the side wall of the coaxial air cavity 201 to avoid the gap, so that the microstrip dielectric plate is safe and reliable.
In the embodiment shown in fig. 1 to 3, the length of the impedance gradual change central conductor 402 is set to be within a range of 0.01mm to 0.2mm from the length of the microstrip line dielectric slab 401. In some embodiments, the length of the impedance gradual change central conductor 402 is set to be 0.01mm, 0.02mm, 0.03mm, 0.04mm, 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm, 0.1mm, 0.11mm, 0.12mm, 0.13mm, 0.14mm, 0.15mm, 0.16mm, 0.17mm, 0.18mm, 0.19mm, or 0.2mm, which is set back relative to the length of the microstrip line dielectric plate 401. By the arrangement, the requirements on safety and reliability of the assembly process are met, and the short circuit risk introduced in the assembly process is reduced. The structure is compact, the working frequency band is wide, the debugging amount is small, the repeatability is high, the millimeter wave engineering application is realized, and the actual engineering requirements can be widely met.
In the embodiment shown in fig. 1-3, the end of the graded impedance center conductor 402 that is relatively close to the insulator probe 30 is soldered to the insulator probe 30. In this embodiment, the end of the graded impedance center conductor 402 that is relatively close to the insulator probe 30 is soldered 50 to the insulator probe 30. The impedance gradual change central conductor 402 and the insulator probe 30 are connected in a welding mode, so that the connection stability is better.
In the embodiment shown in fig. 1 to 3, the microstrip line 40 further includes a bottom metal layer (not shown) disposed at the bottom of the microstrip line dielectric slab 401, and the microstrip line dielectric slab 401 is soldered to the metal carrier 10 through the bottom metal layer. The microstrip line dielectric plate 401 is welded to the metal carrier 10 through the bottom metal layer, so that the fixing effect is stable, and the connection performance is stable and reliable.
Fig. 4 is a graph showing simulation results of insertion loss of the coaxial microstrip transition structure 1 shown in fig. 1. In the embodiment shown in FIG. 4, the insertion loss is-0.6648 dB at an operating frequency of 50 GHz. Fig. 5 is a graph showing simulation results of input standing waves of the coaxial microstrip transition structure 1 shown in fig. 1. In the embodiment shown in fig. 5, the input standing wave ratio is 1.1971 at an operating frequency of 50 GHz. So set up, pass coaxial air cavity 201 overlap joint on microstrip line 40's impedance gradual change center conductor 402 through setting up insulator probe 30, can compensate the mismatch that is introduced by the electromagnetic wave mode transition, for satisfying the mismatch that the discontinuity of introducing such as assembly process security and reliability brought, realize the high efficiency transmission of millimeter wave signal to satisfy the demands such as low loss, ultra wide band, the simple structure workable of millimeter wave radio frequency module to port conversion.
The above description is only a preferred embodiment of the present application and should not be taken as limiting the present application, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A coaxial microstrip transition structure comprising: the micro-strip line comprises a micro-strip line dielectric slab arranged on the metal carrier and an impedance gradual change central conductor arranged on the micro-strip line dielectric slab; one end of the radio frequency insulator is flush with the side wall of one end of the metal carrier, and the other end of the radio frequency insulator is positioned on the metal carrier through the coaxial air cavity; the insulator probe penetrates through the central axis of the radio frequency insulator and extends from two ends of the radio frequency insulator, wherein one end of the insulator probe can be connected to a coaxial connector, and the other end of the insulator probe penetrates through the coaxial air cavity to form air coaxiality and is lapped on the impedance gradual change central conductor of the microstrip line.
2. The coaxial microstrip transition structure of claim 1, wherein the tapered impedance center conductor comprises a tapered impedance section and a fixed impedance section connected to the tapered impedance section, the tapered impedance section being disposed proximate to the insulator probe relative to the fixed impedance section and overlapping the tapered impedance section.
3. The coaxial microstrip transition structure of claim 2, wherein the impedance of the impedance transition section is greater than the impedance of the impedance fixation section, wherein the impedance of the impedance fixation section is 50 ohms.
4. The coaxial microstrip transition structure according to claim 1, wherein there is a gap between an end of the impedance graded center conductor relatively close to the insulator probe and a sidewall of the coaxial air cavity.
5. The coaxial microstrip transition structure according to claim 1, wherein a gap is provided between an end of the microstrip dielectric slab relatively close to the insulator probe and a sidewall of the coaxial air cavity.
6. The coaxial microstrip transition structure according to claim 1, wherein the length of the impedance gradual change center conductor is set to be within a range of 0.01mm to 0.2mm with respect to the length of the microstrip dielectric slab.
7. The coaxial microstrip transition structure of claim 1 wherein the end of the tapered impedance center conductor relatively close to the insulator probe is soldered to the insulator probe.
8. The microstrip coaxial transition structure of claim 1, wherein the microstrip further comprises a bottom metal layer disposed at the bottom of the microstrip dielectric plate, and the microstrip dielectric plate is soldered to the metal carrier through the bottom metal layer.
9. The coaxial microstrip transition structure according to claim 1, wherein the microstrip dielectric slab is a high-frequency dielectric slab; and/or
The insulating medium of the radio frequency insulator is made of glass.
10. The coaxial microstrip transition structure of claim 1 wherein the microstrip line is a copper-clad strip on a surface of the microstrip dielectric plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211740704.3A CN115986353A (en) | 2022-12-30 | 2022-12-30 | Coaxial microstrip conversion structure |
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| CN202211740704.3A CN115986353A (en) | 2022-12-30 | 2022-12-30 | Coaxial microstrip conversion structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117728138A (en) * | 2023-12-26 | 2024-03-19 | 北京信芯科技有限公司 | Welding-free connecting mechanism of coaxial connector and planar microstrip |
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- 2022-12-30 CN CN202211740704.3A patent/CN115986353A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117728138A (en) * | 2023-12-26 | 2024-03-19 | 北京信芯科技有限公司 | Welding-free connecting mechanism of coaxial connector and planar microstrip |
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