CN109801907A - A kind of class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package - Google Patents
A kind of class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package Download PDFInfo
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- CN109801907A CN109801907A CN201910067066.5A CN201910067066A CN109801907A CN 109801907 A CN109801907 A CN 109801907A CN 201910067066 A CN201910067066 A CN 201910067066A CN 109801907 A CN109801907 A CN 109801907A
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- millimeter wave
- planar waveguide
- wire bonding
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- power amplifier
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Abstract
The invention discloses a kind of class co-planar waveguide gold wire bonding interconnection structures for millimeter wave chip package, it includes millimeter wave power amplifier chips, heat dissipation carrier and PCB co-planar waveguide, the millimeter wave power amplifier chips eutectic is sintered on heat dissipation carrier, the heat dissipation carrier is embedded into cavity body structure, is interconnected between GSG PAD and the PCB co-planar waveguide of the millimeter wave power amplifier chips by class co-planar waveguide gold wire bonding interconnection structure.The present invention is interconnected by the way that class co-planar waveguide gold wire bonding interconnection structure is arranged between GSG PAD and the PCB co-planar waveguide of millimeter wave power amplifier chips, so that the transmission performance of millimeter wave power amplifier chips is no longer dependent on the integrality of ground level, overcome influence of the Horizon planar defect to transmission performance, and with traditional printed circuit and gold wire bonding process compatible, have many advantages, such as that structure is simple, be easily achieved, is had a good application prospect in the interconnection design that millimeter involves Terahertz frequency range active device and passive device.
Description
Technical field
The present invention relates to millimeters to involve Terahertz frequency range chip package, specially a kind of class for millimeter wave chip package
Co-planar waveguide gold wire bonding interconnection structure.
Background technique
With the utilization and exploitation of microwave frequency band frequency spectrum resource, the working frequency of various electronic systems is from microwave frequency band
It extends to millimeter and involves Terahertz frequency range.Compared with microwave, millimeter involves THz wave with wavelength is short, bandwidth, information
Advantages, the millimeters such as capacity is big involve THz wave technology and are widely used in communication, radar, electronic countermeasure, precise guidance, biology
The fields such as medical treatment.
Involve Terahertz frequency range in millimeter, amplifier can amplify the signal that millimeter involves Terahertz frequency range, be the frequency range
The Primary Component of receive-transmit system.Power amplifier MMIC (Microwave Monolithic Integrated Circuit, microwave monolithic
Integrated circuit) convert dc power to the radio-frequency power of output, while also improving the integrated level of system.In general, exist
Millimeter involves the power amplifier of Terahertz frequency range its efficiency mostly 20% or so, remaining most of energy is lost in the form of thermal energy
Fall.If generating when power amplifier chips work is that heat cannot timely shed, it is unstable to may cause chip operation, or even burn
Ruin chip.So when carrying out system design, it is necessary to consider the heat dissipation problem of mmic amplifier chip.
Microstrip line as transmission line most widely used in microwave integrated circuit, have design it is simple, low in cost, be convenient for
The advantages that Planar integration, is also in use to always millimeter and involves Terahertz frequency range.The input and output of mmic chip are generally GSG PAD
Structure facilitates carry out On-wafer measurement.On GSG (Ground Signal Ground, ground-signal-ground) PAD (pin) structural nature
It is equivalent to one section of very short co-planar waveguide, intermediate main line can also be used as microstrip line use.When mmic chip is mutual with microstrip line
Lian Shi, bonding gold wire interconnects usually between microstrip line and chip input, output micro-strip to realize, and chip input and output
The ground connection PAD of GSG structure is typically ignored use.
For microstrip line as two conductor transmission line, transmission performance is necessarily dependent upon the integrality of ground level.When ground level not
When complete or existing defects, transmission performance can be impacted.Such defect can be used to design various resonators or
Person's filter, i.e., so-called defect ground structure DGS (Defected Ground Structure).When such defect is not by the phase
When prestige, it is possible to cause extreme influence to the transmission performance of microstrip line.
In the design that microwave, millimeter involve Terahertz frequency range MMIC power amplifier module, it can usually introduce carrier and chip is dissipated
Heat.Introducing carrier mainly has following purpose: first is that carrier has relatively high thermal coefficient, can carry out to chip good
Heat dissipation；But the thermal expansion coefficient of the thermal expansion coefficient of carrier and power amplifier chips is relatively, prevents chip from expanding with heat and contract with cold
In the process by cavity drawing crack；Third is that it is padded to chip by designing suitable carrier thickness, so that the upper surface of chip is in PCB's
It remains basically stable upper surface.But the introducing of carrier inevitably will form a gap, the gap meeting between carrier and cavity
Cut off the Horizon surface current of traditional micro-strip spun gold interconnection structure.In microwave frequency band, since operation wavelength is long more than gap depth,
Influence of the gap depth to micro-strip gold wire bonding is unobvious.But it arrives millimeter and has involved Terahertz frequency range, operation wavelength and gap
Depth it is comparable, the presence in gap can cause band interior resonance, to cause severe exacerbation to transmission performance.
Summary of the invention
Goal of the invention of the invention is: in order to solve problem above existing in the prior art, the invention proposes one kind
Class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package.
The technical scheme is that a kind of class co-planar waveguide gold wire bonding for millimeter wave chip package mutually links
Structure, including millimeter wave power amplifier chips, heat dissipation carrier and PCB co-planar waveguide, the millimeter wave power amplifier chips eutectic are sintered to heat dissipation
On carrier, the heat dissipation carrier is embedded into cavity body structure, the GSG PAD and PCB co-planar waveguide of the millimeter wave power amplifier chips
Between be interconnected by class co-planar waveguide gold wire bonding interconnection structure.
Further, the signal main line of the main signal line of the GSG PAD of the millimeter wave power amplifier chips and PCB co-planar waveguide
Connected by gold wire bonding, two ground wires of the GSG PAD of millimeter wave power amplifier chips respectively with two ground wires of PCB co-planar waveguide
It is connected by gold wire bonding, constitutes class co-planar waveguide gold wire bonding interconnection structure.
It further, further include transformational structure of the micro-strip to co-planar waveguide, the transformational structure is by the microstrip line master on PCB
Line is converted to PCB co-planar waveguide.
Further, when two-stage power amplifier chips cascade, the GSG PAD and rear class millimeter wave of prime millimeter wave power amplifier chips
It is interconnected between the GSG PAD of power amplifier chips by class co-planar waveguide gold wire bonding interconnection structure.
Further, the main signal line of the GSG PAD of the prime millimeter wave power amplifier chips and rear class millimeter wave power amplifier core
The main signal line of the GSG PAD of piece is connected by gold wire bonding, two ground wires point of the GSG PAD of prime millimeter wave power amplifier chips
It is not connect with two ground wires of the GSG PAD of rear class millimeter wave power amplifier chips by gold wire bonding, constitutes class co-planar waveguide spun gold
It is bonded interconnection structure.
The beneficial effects of the present invention are: the present invention by GSG PAD in millimeter wave power amplifier chips and PCB co-planar waveguide it
Between setting class co-planar waveguide gold wire bonding interconnection structure be interconnected so that the transmission performance of millimeter wave power amplifier chips eliminates the reliance on
In the integrality of ground level, overcome influence of the Horizon planar defect to transmission performance, and with traditional printed circuit and spun gold
Bonding technology is compatible, has many advantages, such as that structure is simple, is easily achieved, involves Terahertz frequency range active device and passive device in millimeter
It is had a good application prospect in the interconnection design of part.
Detailed description of the invention
Fig. 1 is the top view of the class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package of the invention；
Fig. 2 is the side view of the class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package of the invention；
The class co-planar waveguide for millimeter wave chip package when Fig. 3 is two-stage power amplifier chips cascade in the embodiment of the present invention
The top view of gold wire bonding interconnection structure.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
As depicted in figs. 1 and 2, mutually link for the class co-planar waveguide gold wire bonding for millimeter wave chip package of the invention
The top view and side view of structure.A kind of class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package, including milli
Metric wave power amplifier chips, heat dissipation carrier and PCB co-planar waveguide, the millimeter wave power amplifier chips eutectic are sintered on heat dissipation carrier, institute
It states heat dissipation carrier to be embedded into cavity body structure, passes through class between GSG PAD and the PCB co-planar waveguide of the millimeter wave power amplifier chips
Co-planar waveguide gold wire bonding interconnection structure is interconnected.
Embodiment 1
Class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package of the invention with millimeter wave power amplifier
Coplanar waveguide transmission line is used on the connected PCB of chip input and output, so that signal code and earth-return electric current are in same flat
The input and output of millimeter wave power amplifier chips are realized in face.
Due to unavoidably will form a gap between heat dissipation carrier and cavity, the depth in the gap is about carrier
Thickness；For traditional micro-strip gold wire bonding structure, ground level current loop has been cut off in the presence in the gap, is involved in millimeter
Terahertz frequency range causes band interior resonance, influences transmission performance；Therefore, the present invention is interconnected by setting class co-planar waveguide gold wire bonding
Structure will interconnect between GSG PAD and the PCB co-planar waveguide of millimeter wave power amplifier chips, to realize the excellent transmission of signal, solve
Certainly because caused by the introducing of carrier Horizon planar defect cut off the Horizon surface current of traditional micro-strip spun gold interconnection structure, cause with interior humorous
The problem of shaking, severe exacerbation caused to transmission performance.
Above-mentioned class co-planar waveguide gold wire bonding interconnection structure specifically: the main signal of the GSG PAD of millimeter wave power amplifier chips
Line is connect with the signal main line of PCB co-planar waveguide by gold wire bonding, two ground wires point of the GSG PAD of millimeter wave power amplifier chips
It is not connect with two ground wires of PCB co-planar waveguide by gold wire bonding, constitutes class co-planar waveguide gold wire bonding interconnection structure；Class is total
Surface wave leads gold wire bonding interconnection structure with complete earth-current circuit, and transmission performance is no longer dependent on the complete of ground level
Property, can overcome influence of the Horizon planar defect to transmission performance, and with traditional printed circuit and gold wire bonding process compatible.
Embodiment 2
Class co-planar waveguide gold wire bonding interconnection structure of the invention is formed using gold wire bonding type of attachment similar to coplanar
The transmission line form of waveguide is coplanar waveguide form at the both ends of gold wire bonding.
Coplanar waveguide transmission line is needed on the PCB near millimeter wave power amplifier chips input and output, in the nothing far from chip
Source circuit is can according to need when designing using micro-strip form, the present invention using a micro-strip to co-planar waveguide transformational structure,
Microstrip line main line on PCB is converted into PCB co-planar waveguide.Here the transformational structure of micro-strip to co-planar waveguide can use ability
Realize that the common transformational structure of the function, the present invention do not repeat them here in domain.
Pass through above-mentioned class co-planar waveguide gold between the GSG PAD of PCB co-planar waveguide and millimeter wave power amplifier chips of the invention
Silk bonding interconnection structure is interconnected, class co-planar waveguide gold wire bonding interconnection structure specifically: the GSG of millimeter wave power amplifier chips
The main signal line of PAD is connect with the signal main line of PCB co-planar waveguide by gold wire bonding, the GSG PAD of millimeter wave power amplifier chips
Two ground wires connect respectively with two ground wires of PCB co-planar waveguide by gold wire bonding, constitute class co-planar waveguide gold wire bonding
Interconnection structure；Class co-planar waveguide gold wire bonding interconnection structure has complete earth-current circuit, and transmission performance is no longer dependent on
The integrality of ground level, can overcome influence of the Horizon planar defect to transmission performance, and with traditional printed circuit and spun gold
Bonding technology is compatible.
Embodiment 3
As shown in figure 3, for the class for millimeter wave chip package in the embodiment of the present invention when cascade of two-stage power amplifier chips
The top view of co-planar waveguide gold wire bonding interconnection structure.The present invention when two-stage millimeter wave power amplifier chips cascade when, in no front and back
Under the premise of interference, class co-planar waveguide gold wire bonding interconnection structure connection millimeter wave power amplifier chips can be directly used, that is, use
Class co-planar waveguide gold wire bonding interconnection structure connects the output GSG PAD structure and rear class millimeter wave of prime millimeter wave power amplifier chips
The input GSG PAD structure of power amplifier chips realizes the inter-chip interconnection of millimeter wave power amplifier chips, to eliminate chip chamber PCB band
Interconnection loss between the grade come.
Above-mentioned class co-planar waveguide gold wire bonding interconnection structure specifically: the master of the GSG PAD of prime millimeter wave power amplifier chips
Signal wire is connect with the main signal line of the GSG PAD of rear class millimeter wave power amplifier chips by gold wire bonding, prime millimeter wave power amplifier
Two ground wires of the GSG PAD of chip pass through spun gold key with two ground wires of the GSG PAD of rear class millimeter wave power amplifier chips respectively
Connection is closed, class co-planar waveguide gold wire bonding interconnection structure is constituted；Class co-planar waveguide gold wire bonding interconnection structure has completely
Current loop, transmission performance are no longer dependent on the integrality of ground level, and Horizon planar defect can be overcome to the shadow of transmission performance
Ring, and with traditional printed circuit and gold wire bonding process compatible.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field
Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention
The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.
Claims (5)
1. a kind of class co-planar waveguide gold wire bonding interconnection structure for millimeter wave chip package, which is characterized in that including millimeter
Wave power amplifier chips, heat dissipation carrier and PCB co-planar waveguide, the millimeter wave power amplifier chips eutectic is sintered on heat dissipation carrier, described
Heat dissipation carrier is embedded into cavity body structure, total by class between GSG PAD and the PCB co-planar waveguide of the millimeter wave power amplifier chips
Surface wave is led gold wire bonding interconnection structure and is interconnected.
2. being used for the class co-planar waveguide gold wire bonding interconnection structure of millimeter wave chip package, feature as described in claim 1
It is, the main signal line of the GSG PAD of the millimeter wave power amplifier chips and the signal main line of PCB co-planar waveguide pass through gold wire bonding
Connection, two ground wires of the GSG PAD of millimeter wave power amplifier chips pass through gold wire bonding with two ground wires of PCB co-planar waveguide respectively
Connection constitutes class co-planar waveguide gold wire bonding interconnection structure.
3. being used for the class co-planar waveguide gold wire bonding interconnection structure of millimeter wave chip package, feature as claimed in claim 2
It is, further includes transformational structure of the micro-strip to co-planar waveguide, the microstrip line main line on PCB is converted to PCB by the transformational structure
Co-planar waveguide.
4. being used for the class co-planar waveguide gold wire bonding interconnection structure of millimeter wave chip package, feature as claimed in claim 3
It is, when the cascade of two-stage power amplifier chips, GSG PAD and the rear class millimeter wave power amplifier chips of prime millimeter wave power amplifier chips
It is interconnected between GSG PAD by class co-planar waveguide gold wire bonding interconnection structure.
5. being used for the class co-planar waveguide gold wire bonding interconnection structure of millimeter wave chip package, feature as claimed in claim 4
It is, the GSG PAD's of the main signal line and rear class millimeter wave power amplifier chips of the GSG PAD of the prime millimeter wave power amplifier chips
Main signal line by gold wire bonding connect, two ground wires of the GSG PAD of prime millimeter wave power amplifier chips respectively with rear class millimeter
Two ground wires of the GSG PAD of wave power amplifier chips are connected by gold wire bonding, constitute class co-planar waveguide gold wire bonding interconnection structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910067066.5A CN109801907B (en) | 2019-01-24 | 2019-01-24 | Quasi-coplanar waveguide gold wire bonding interconnection structure for millimeter wave chip packaging |
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| CN201910067066.5A CN109801907B (en) | 2019-01-24 | 2019-01-24 | Quasi-coplanar waveguide gold wire bonding interconnection structure for millimeter wave chip packaging |
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| CN109801907B CN109801907B (en) | 2020-09-25 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178671A (en) * | 2021-04-23 | 2021-07-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
| CN113381154A (en) * | 2021-05-20 | 2021-09-10 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113540915A (en) * | 2021-07-19 | 2021-10-22 | 赛莱克斯微系统科技（北京）有限公司 | Micro-coaxial radio frequency transmission line and GSG (ground satellite System) adapter thereof |
| CN114019619A (en) * | 2021-10-26 | 2022-02-08 | 武汉光谷信息光电子创新中心有限公司 | Circuit structure integrated by optical device and assembling method |
| CN114428066A (en) * | 2022-01-28 | 2022-05-03 | 中北大学 | Terahertz biosensor based on ELC resonator and micropores |
| CN114497948A (en) * | 2022-01-26 | 2022-05-13 | 中国电子科技集团公司第十三研究所 | Millimeter wave conversion structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2807498Y (en) * | 2005-06-01 | 2006-08-16 | 东南大学 | Substrate integrated waveguide - coplanar waveguide band-pass filter |
| US7109922B2 (en) * | 2002-04-19 | 2006-09-19 | Roadeye Flr General Partnership | Rf system concept for vehicular radar having several beams |
| CN102394361A (en) * | 2011-06-29 | 2012-03-28 | 中兴通讯股份有限公司 | Ultra-broadband antenna and terminal |
| CN203057081U (en) * | 2012-12-31 | 2013-07-10 | 南京才华科技集团有限公司 | Power amplifier of Q-waveband millimeter waves |
| CN205812005U (en) * | 2016-01-22 | 2016-12-14 | 南京誉葆科技有限公司 | A kind of Five-channel millimeter wave transceiving assembly |
| CN106409701A (en) * | 2016-10-26 | 2017-02-15 | 中国科学院半导体研究所 | Electrode structure for gold wire bonding |
-
2019
- 2019-01-24 CN CN201910067066.5A patent/CN109801907B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109922B2 (en) * | 2002-04-19 | 2006-09-19 | Roadeye Flr General Partnership | Rf system concept for vehicular radar having several beams |
| CN2807498Y (en) * | 2005-06-01 | 2006-08-16 | 东南大学 | Substrate integrated waveguide - coplanar waveguide band-pass filter |
| CN102394361A (en) * | 2011-06-29 | 2012-03-28 | 中兴通讯股份有限公司 | Ultra-broadband antenna and terminal |
| CN203057081U (en) * | 2012-12-31 | 2013-07-10 | 南京才华科技集团有限公司 | Power amplifier of Q-waveband millimeter waves |
| CN205812005U (en) * | 2016-01-22 | 2016-12-14 | 南京誉葆科技有限公司 | A kind of Five-channel millimeter wave transceiving assembly |
| CN106409701A (en) * | 2016-10-26 | 2017-02-15 | 中国科学院半导体研究所 | Electrode structure for gold wire bonding |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178671A (en) * | 2021-04-23 | 2021-07-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
| CN113381154A (en) * | 2021-05-20 | 2021-09-10 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113381154B (en) * | 2021-05-20 | 2022-07-12 | 西安交通大学 | Interconnection/transition structure of coaxial transmission line and chip |
| CN113540915A (en) * | 2021-07-19 | 2021-10-22 | 赛莱克斯微系统科技（北京）有限公司 | Micro-coaxial radio frequency transmission line and GSG (ground satellite System) adapter thereof |
| CN114019619A (en) * | 2021-10-26 | 2022-02-08 | 武汉光谷信息光电子创新中心有限公司 | Circuit structure integrated by optical device and assembling method |
| CN114497948A (en) * | 2022-01-26 | 2022-05-13 | 中国电子科技集团公司第十三研究所 | Millimeter wave conversion structure |
| CN114428066A (en) * | 2022-01-28 | 2022-05-03 | 中北大学 | Terahertz biosensor based on ELC resonator and micropores |
| CN114428066B (en) * | 2022-01-28 | 2023-08-04 | 中北大学 | Terahertz biosensor based on ELC resonator and micropore |
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