CN113555332A - High-frequency device integrated module and high-frequency device integrated module group - Google Patents
High-frequency device integrated module and high-frequency device integrated module group Download PDFInfo
- Publication number
- CN113555332A CN113555332A CN202110788987.8A CN202110788987A CN113555332A CN 113555332 A CN113555332 A CN 113555332A CN 202110788987 A CN202110788987 A CN 202110788987A CN 113555332 A CN113555332 A CN 113555332A
- Authority
- CN
- China
- Prior art keywords
- integrated
- frequency
- module
- conductor
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a high-frequency device integrated module and a module, comprising: a substrate wafer; the two high-frequency devices to be integrated are arranged on the substrate wafer and are connected through a micro-coaxial transmission structure; the sealing cover wafer is provided with a cavity, and one side provided with the cavity is covered on the substrate wafer to form an airtight space, so that two high-frequency devices to be integrated are placed in the airtight space; the substrate wafer and/or the cover wafer are/is provided with a first conductive through hole, the high-frequency device to be integrated is connected with an external accessory device through the first conductive through hole, and the external accessory device is located outside the airtight space. The method and the device can remarkably reduce the insertion loss of high-frequency electromagnetic wave transmission such as radio frequency/millimeter wave and the like, can well solve the problems of signal distortion, signal distortion and the like in high-frequency digital signal transmission, and can also enhance the integration level of high-frequency devices.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a high-frequency device integrated module and a high-frequency device module.
Background
With the rapid development of communication and information processing technologies, more and more high frequency electronic device modules are integrated and applied to complex electronic systems. Integration of a high frequency electronic device module is generally performed by placing a high frequency device on a high frequency PCB (Printed Circuit Board) substrate or an alumina ceramic substrate, and interconnecting and integrating the high frequency electronic device module on the high frequency PCB substrate or the alumina ceramic substrate using a microstrip line or a metal via. However, when the high-frequency devices are integrated by interconnection using the related art, the high-frequency signals may generate serious signal distortion and signal distortion during transmission.
Disclosure of Invention
The embodiment of the application provides a high-frequency device integration module, and solves the technical problems that after high-frequency devices are interconnected and integrated in the prior art, high-frequency signals can generate serious signal distortion and signal distortion in the transmission process, and the technical effect of reducing the degree of signal distortion and signal distortion of the high-frequency signals in the transmission process is achieved.
In a first aspect, the present application provides a high frequency device integrated module, the module comprising:
a substrate wafer;
the two high-frequency devices to be integrated are arranged on the substrate wafer and are connected through a micro-coaxial transmission structure;
the sealing cover wafer is provided with a cavity, and one side provided with the cavity is covered on the substrate wafer to form an airtight space, so that two high-frequency devices to be integrated are placed in the airtight space;
the substrate wafer and/or the cover wafer are/is provided with a first conductive through hole, the high-frequency device to be integrated is connected with an external accessory device through the first conductive through hole, and the external accessory device is located outside the airtight space.
Further, the micro-coaxial transmission structure comprises a cylindrical outer conductor and an inner conductor arranged inside the outer conductor, and the outer conductor and the inner conductor are insulated.
Further, the module further comprises:
and a connecting conductor provided between the inner conductor and the high-frequency device to be integrated, for connecting the inner conductor and the high-frequency device to be integrated.
Further, the module further comprises:
and the ball planting is arranged between the inner conductor and the connecting conductor and used for welding the inner conductor and the connecting conductor.
Further, the first conductive through hole comprises a sleeve conductor and a columnar conductor, the columnar conductor is arranged on a central axis of the sleeve conductor, and the sleeve conductor is insulated from the columnar conductor.
Further, the module further comprises:
and a heightening member provided between the cap wafer and the substrate wafer for increasing the airtight space.
Further, the raised features include second conductive vias that connect with the first conductive vias of the cap wafer and/or the substrate wafer.
Further, the shape of the micro-coaxial transmission structure is a preset shape.
Further, the module includes:
and the air suction film is arranged in the cavity of the cover wafer.
In a second aspect, the present application provides a high frequency device integrated module, which includes two integrated modules, wherein the two integrated modules are connected through a first conductive channel, and the integrated modules are connected with an external accessory device through the first conductive channel.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
the method realizes the integration of the high-frequency device on a wafer level, and particularly arranges the high-frequency device to be integrated on a substrate wafer, and covers a cover wafer with a cavity on the substrate wafer, so that the high-frequency device to be integrated is arranged in an airtight space formed by the cavity. The high-frequency signal is transmitted in the airtight space with better air tightness, the insertion loss of high-frequency electromagnetic wave transmission such as radio frequency/millimeter wave and the like can be obviously reduced, and the problems of signal distortion, signal distortion and the like in the high-frequency digital (pulse) signal transmission can be better solved. The high-frequency devices to be integrated in the airtight space are interconnected through the micro-coaxial transmission structure, so that the problems of overhigh insertion loss and low isolation of high-frequency signals can be avoided. The substrate wafer and/or the cover wafer are/is provided with first conductive through holes, and the conductive through holes can enable the device module to be integrated in the airtight space to be electrically connected with external accessory devices outside the airtight space, so that the integration level of high-frequency devices can be enhanced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a high-frequency device integrated module provided in the present application;
fig. 2 is a schematic cross-sectional view of a micro-coaxial transmission structure provided herein;
fig. 3 is a schematic perspective view of a micro-coaxial transmission structure provided in the present application;
fig. 4 is a schematic perspective view of another micro-coaxial transmission structure provided in the present application;
fig. 5 is a schematic structural diagram of a high-frequency device integrated module including ball-planting provided in the present application;
fig. 6 is a schematic structural diagram of a high-frequency device integrated module including a heightened component according to the present application;
fig. 7 is a schematic structural diagram of another high-frequency device integrated module provided in the present application;
fig. 8 and 9 are schematic cross-sectional views of a first conductive via provided in the present application;
fig. 10 is a schematic structural view of another high-frequency device integrated module provided in the present application;
fig. 11 is a schematic structural diagram of a high-frequency device integrated module according to the present application.
Reference numerals:
1-substrate wafer, 2-raised features, 3-cap wafer, 4-hermetic space, 5-top conductor, 6-bottom conductor, 7-inner conductor, 8-dielectric strip, 9, 10-third conductor, 11, 12-second conductor, 13, 14-first conductor, 15, 16-first conductive via, 17-second conductive via, 18-cap wafer, 19-substrate wafer, 20,21, 22, 23-first conductive via, 24-external accessory device, 25,26, 27-sidewall conductor, 28-external accessory device.
Detailed Description
The embodiment of the application provides a high-frequency device integration module, and solves the technical problems that after high-frequency devices are interconnected and integrated in the prior art, high-frequency signals can generate serious signal distortion and signal distortion in the transmission process.
In order to solve the technical problems, the general idea of the embodiment of the application is as follows:
a high frequency device integrated module, the module comprising: a substrate wafer; the two high-frequency devices to be integrated are arranged on the substrate wafer and are connected through a micro-coaxial transmission structure; the sealing cover wafer is provided with a cavity, and one side provided with the cavity is covered on the substrate wafer to form an airtight space, so that two high-frequency devices to be integrated are placed in the airtight space; the substrate wafer and/or the cover wafer are/is provided with a first conductive through hole, the high-frequency device to be integrated is connected with an external accessory device through the first conductive through hole, and the external accessory device is located outside the airtight space.
In this embodiment, the integration of the high-frequency device is realized on a wafer level, specifically, the high-frequency device to be integrated is disposed on the substrate wafer 1, and the cover wafer 3 with the cavity is covered on the substrate wafer 1, so that the high-frequency device to be integrated is disposed in the airtight space 4 formed by the cavity. The high-frequency signal is transmitted in the airtight space with better air tightness, the insertion loss of high-frequency electromagnetic wave transmission such as radio frequency/millimeter wave and the like can be obviously reduced, and the problems of signal distortion, signal distortion and the like in the high-frequency digital (pulse) signal transmission can be better solved.
The high-frequency devices to be integrated in the airtight space 4 are interconnected through a micro-coaxial transmission structure, so that the problems of over-high insertion loss and low isolation of high-frequency signals can be avoided. The substrate wafer 1 and/or the cap wafer 3 are/is provided with first conductive through holes, and the conductive through holes can enable the device module to be integrated in the airtight space 4 to be electrically connected with external accessory devices outside the airtight space 4, so that the integration level of high-frequency devices can be enhanced.
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
First, it is stated that the term "and/or" appearing herein is merely one type of associative relationship that describes an associated object, meaning that three types of relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
In the related art, a lead bonding mode is adopted to perform interconnection integration of a micro-coaxial transmission structure and a high-frequency device on a plane, or a discrete lead bonding and surface mounting mode is adopted to perform three-dimensional integration of the micro-coaxial transmission structure and the high-frequency device, however, when the related art is used for interconnection integration of a high-frequency device module, the insertion loss/transmission loss of a high-frequency/ultrahigh-frequency signal is relatively serious, and the isolation of the high-frequency signal is relatively low; the transmission of high frequency digital (pulse) signals can cause severe signal distortion and signal distortion. These problems are all urgently needed to be solved.
In order to solve the above technical problem, this embodiment provides a high-frequency device integration module as shown in fig. 1, where the module includes a substrate wafer 1, two high-frequency devices to be integrated (the two high-frequency devices to be integrated in this embodiment may only include two high-frequency devices to be integrated, or may include more than two high-frequency devices to be integrated, and the specific number of the high-frequency devices to be integrated may be determined according to actual requirements), and a cover wafer 3 (fig. 1 shows a structure diagram of the high-frequency device integration module by taking two high-frequency devices to be integrated as an example, and the two high-frequency devices to be integrated are a high-frequency device a and a high-frequency device B, respectively). At least two high-frequency devices to be integrated are arranged on the substrate wafer 1, the two high-frequency devices to be integrated on the substrate wafer 1 can be connected through a micro-coaxial transmission structure, and besides the connection through the micro-coaxial transmission structure, the connection can be realized through other connection structures. The cap wafer 3 is provided with a cavity, and the side provided with the cavity is covered on the substrate wafer 1 to form an airtight space 4, so that at least two high-frequency devices to be integrated are placed in the airtight space 4.
A cavity structure is formed in the capping wafer 3, and the cavity structure provides a receiving space for the high frequency device, forming an airtight space 4. And the cover wafer 3 and the substrate wafer 1 are bonded, so that three-dimensional airtight integration is completed for the high-frequency device module. In order to further enhance the airtightness of the airtight space 4, a gettering film may be provided in the cavity of the cap wafer 3.
First, a micro-coaxial transmission structure will be explained. As shown in fig. 2 and 3, fig. 2 is a schematic cross-sectional view of the micro-coaxial structure, and fig. 3 is a schematic perspective view of the micro-coaxial structure. The Micro-coaxial transmission structure is a three-dimensional electromagnetic wave transmission structure based on a Micro-Electro-Mechanical System (MEMS) surface Micro-machining process or a LIGA (lithographics-lithography, galvanoforming-electroforming, abdorming-injection) process. The micro-coaxial transmission structure comprises a cylindrical outer conductor and an inner conductor 7 arranged inside the outer conductor, wherein the outer conductor and the inner conductor 7 are insulated. Wherein the inner conductor 7 is solid. The cross section of the outer conductor can be square, round or irregular, and can be set according to actual conditions. The inner conductor 7 may be a cylindrical, square, or irregular columnar structure, and may be set according to actual conditions.
In fact, the inner conductor 7 in the micro-coaxial transmission structure is suspended, i.e. the outer conductor and the inner conductor 7 are not in contact, and most of the surface area of the inner conductor 7 is in direct contact with the air. In order to keep the inner conductor 7 out of contact with the outer conductor and to keep the majority of the surface area in direct contact with the air, a dielectric strip 8 is mounted inside the outer conductor, the axial direction of the dielectric strip 8 being perpendicular to the axial direction of the outer conductor. A plurality of dielectric strips 8 can be arranged in one outer conductor, the inner conductor 7 is directly placed on the dielectric strips 8, and the axial direction of the inner conductor 7 is coincident with or parallel to the axial direction of the outer conductor. The outer conductor and the inner conductor 7 are made of metal, such as copper, and the dielectric strip 8 is made of insulating material.
As shown in fig. 2 and fig. 3, the outer conductor may be formed by stacking a plurality of layers of conductors, the outer conductor includes a bottom layer conductor 6, side wall conductors 25,26,27 and a top layer conductor 5, the bottom layer conductor 6 and the top layer conductor 5 are respectively a plate-type conductor, the side wall conductors 25,26,27 include three layers of conductors (the side walls on both sides are formed by 6 conductors), and a cylindrical structure with a square cross section is formed by building the bottom layer conductor 6, the side wall conductors 25,26,27 and the top layer conductor 5. The dielectric strip 8 bridges between the side wall conductors 25,26,27 on both sides for carrying the inner conductor 7.
As shown in fig. 4, which is also a micro-coaxial transmission structure, the micro-coaxial transmission structure shown in fig. 4 is more complicated than the micro-coaxial structures shown in fig. 2 and 3. Therefore, the shape of the micro-coaxial transmission structure provided by the embodiment can be any preset shape, and the preset shape can be set according to actual conditions. Release holes in FIG. 4 are referred to as release holes.
The internal field of the micro-coaxial transmission structure is a TEM Wave (Transverse Electromagnetic Wave). The TEM wave has no dispersion in any frequency band theoretically, and can ensure the broadband signal transmission without distortion. The dielectric portion of the micro-coaxial transmission structure is mainly composed of air, which minimizes the capacitive loss thereof, so that the micro-coaxial transmission structure has a near-optimal ideal low-loss characteristic. The micro-coaxial transmission structure can be regarded as a closed coaxial waveguide, and the isolation degree of the micro-coaxial transmission structure to the internal and external electromagnetic fields is high. Therefore, the rectangular micro-coaxial transmission structure can solve the problems of large insertion loss and transmission loss, low high-frequency signal isolation, signal mutual interference and serious distortion when high-frequency devices are interconnected and integrated.
Due to the shielding effect of the outer conductor in the micro-coaxial transmission structure, the transmission characteristic of the micro-coaxial transmission structure is independent from the characteristic of the substrate material related to the outside of the micro-coaxial transmission structure. Therefore, RF MEMS (Radio Frequency Micro-Electro-Mechanical System) manufactured based on the Micro coaxial transmission structure may be integrated with the high Frequency device, or the Micro coaxial transmission structure may be used as an interconnection structure to interconnect the high Frequency devices for further integration.
The micro-coaxial transmission structure can be formed by peeling off the substrate after the fabrication, and then re-welding or placing the micro-coaxial transmission structure on the wafer substrate 1, or directly forming the micro-coaxial transmission structure on the wafer substrate 1. The micro-coaxial transmission structure can also be a high-frequency transmission line, a multiplexer, a coupler, an antenna array and other device modules and arrays of the device modules.
Next, the connection conductor in the airtight space 4 will be described. And a connecting conductor provided between the inner conductor 7 and the high-frequency device to be integrated, for connecting the inner conductor 7 and the high-frequency device to be integrated. The number of connecting conductors matches the number of high-frequency devices to be integrated.
The connection conductor may be constituted by one conductor or a plurality of conductors. As shown in fig. 1, the connecting conductors may include second conductors 11,12 and third conductors 9,10, the second conductors 11,12 are flat block conductors, the third conductors 9,10 are vertical column conductors, both ends of the inner conductor 7 are respectively placed on the top ends of the third conductors 9 and 10, the bottom end of the third conductor 9 is connected to the right end of the second conductor 11, and the left end of the second conductor 11 is connected to the high frequency device a; the bottom end of the third conductor 10 is connected to the left end of the second conductor 12, and the right end of the second conductor 11 is connected to the high-frequency device B. The second conductors 11,12 and the third conductors 9,10 may be made of one metal of the same material, for example, copper.
As shown in fig. 1, a substrate wafer 1 is provided with first conductive vias 15,16, a first conductor 13 is provided on the first conductive via 15, and a first conductor 14 is provided on the first conductive via 16. The first conductors 13,14 are flat block conductors. The first conductors 13,14 arranged at the end of the first conductive paths 15,16 in contact with the gastight space 4 have two functions, one of which is to ensure the gastight space 4, i.e. to cover the end of the first conductive through holes 15,16 close to the gastight space 4. The second function is to enable the first conductive paths 15,16 to be electrically connected to the high-frequency component to be integrated.
As shown in fig. 5, between the high-frequency device to be integrated and the first conductors 13,14 and between the high-frequency device to be integrated and the connection conductors, there are also provided solder balls for soldering the inner conductor 7 and the connection conductors.
Next, the height increasing members 2 between the cap wafer 3 and the base wafer 1 will be described. The heightening member 2 is provided between the cap wafer 3 and the substrate wafer 1 for enlarging the airtight space 4. When the size of the component to be accommodated in the airtight space 4 is large and the airtight space 4 cannot satisfy the space required for accommodating the component, the height increasing member 2 may be added between the cap wafer 3 and the substrate wafer 1 to enlarge the airtight space 4. As shown in fig. 6, a raised member 2 is added to the edge of the substrate wafer 1 to expand the encryption space. The substrate wafer 1, the raised features 2 and the cap wafer 3 are three-part bonded together. The substrate wafer 1, the raised features 2 and the cap wafer 3 may be semiconductors, insulators or conductors, as the case may be, depending on the electrical insulation and electrical heat dissipation. For example, commonly used glass, silicon/germanium/silicon carbide, group III-V compound semiconductors (gallium arsenide, gallium nitride, etc.), metals, and the like may be selected.
Finally, the first conductive vias on the substrate wafer 1 and/or the cap wafer 3 are explained. The substrate wafer 1 and/or the cover wafer 3 are provided with first electrically conductive through-holes, through which at least two high-frequency devices to be integrated are connected with external accessory devices, which are located outside the gastight space 4.
The substrate wafer 1 may be provided with one or more first conductive vias, such as the first conductive vias 20,21 in fig. 7, and the cap wafer 3 may also be provided with one or more first conductive vias, such as the first conductive vias 22,23 in fig. 7. The first conductive through hole comprises a sleeve conductor and a columnar conductor, the columnar conductor is arranged on a central axis of the sleeve conductor, the sleeve conductor and the columnar conductor are insulated, the columnar conductor is used for transmitting high-frequency signals, and the sleeve conductor is used for shielding and grounding. More specifically, as shown in fig. 8, which is a schematic cross-sectional structure diagram of the first conductive through hole, an isolation medium F is disposed between the cylindrical conductor E and the sleeve conductor G in the first conductive through hole, and the isolation medium F is an insulator, and may be air or vacuum, or may be partially hollowed. As shown in fig. 9, which is a schematic cross-sectional structure of another first conductive via, region F2 is a solid insulator, and region F1 is air or vacuum. And a peripheral substrate medium H is also arranged outside the sleeve conductor G and plays a role of mechanical support.
The isolation medium F may be hollowed in the cross section shown in fig. 9, and may also be hollowed in the axial direction of the sleeve conductor G (this part does not provide a schematic structural diagram).
In fig. 1, only two first conductive vias, i.e., first conductive vias 15,16, are provided on the substrate wafer 1, and no first conductive vias are provided on the cap wafer 3. The high-frequency device a may be connected to an external accessory device through the first conductive via 15, and the high-frequency device B may be connected to the external accessory device through the first conductive via 16.
As shown in fig. 7, two first conductive vias are disposed on both the substrate wafer 1 and the cap wafer 3, the substrate wafer 1 includes first conductive vias 20,21, and the cap wafer 3 includes first conductive vias 22, 23. The two high-frequency devices to be integrated shown in fig. 7 include a high-frequency device C that can be connected to an external accessory device 24 through a first conductive path 22 on the left side, and a high-frequency device D that can be connected to the external accessory device through a first conductive path 20 on the right side. The substrate wafer 1 and the cap wafer 3 are further provided with first conductive vias 21 and 23 that are through to each other, the first conductive vias 21 and 23 that are through to each other can connect an external accessory device at the bottom of the substrate wafer 1 with an external accessory device at the top of the cap wafer 3, and can also enable a high-frequency device D to be connected with an external accessory device 28 at the top of the cap wafer 3, and the transmission lines are, in order, the high-frequency device D, the first conductive via 20, a connecting member (not shown in fig. 7), the first conductive via 21, and the first conductive via 23.
The first conductive via on the substrate wafer 1 is preferably made by filling or partially filling a conductive body with good conductivity in consideration of its high frequency transmission performance, and at the same time, the conductive body on the sidewall of the conductive via and the material of the substrate wafer 1 are required to have excellent insulation performance, so that the conductive via structure has excellent high frequency transmission characteristics.
As shown in fig. 10, when the heightening member 2 is disposed between the substrate wafer 1 and the cap wafer 3, and the substrate wafer 1 and the cap wafer 3 have the first conductive vias 21,23 penetrating each other, the heightening member 2 includes the second conductive via 17, and the second conductive via 17 is connected to the first conductive via 21,23 of the cap wafer 3 and/or the substrate wafer 1. The structure of the second conductive via is the same as that of the first conductive via, and is not described herein again.
The high-frequency device referred to in this embodiment is a high-frequency device, particularly an active element. Most high frequency devices are made of III-V group semiconductors, and the substrate wafer 1 is generally made of silicon material or glass material, so that the high frequency device integrated module manufactured by the present embodiment is a wafer level heterogeneous integration.
In summary, the high frequency device to be integrated is integrated on a wafer level in this embodiment, specifically, the high frequency device to be integrated is disposed on the substrate wafer 1, and the cover wafer 3 with the cavity is covered on the substrate wafer 1, so that the high frequency device to be integrated is disposed in the airtight space 4 formed by the cavity. The high-frequency signal is transmitted in the airtight space with better air tightness, the insertion loss of high-frequency electromagnetic wave transmission such as radio frequency/millimeter wave and the like can be obviously reduced, and the problems of signal distortion, signal distortion and the like in the high-frequency digital (pulse) signal transmission can be better solved.
The high-frequency devices to be integrated in the airtight space 4 are interconnected through a micro-coaxial transmission structure, so that the problems of over-high insertion loss and low isolation of high-frequency signals can be avoided. The substrate wafer 1 and/or the cap wafer 3 are/is provided with first conductive through holes, and the conductive through holes can enable the device module to be integrated in the airtight space 4 to be electrically connected with external accessory devices outside the airtight space 4, so that the integration level of high-frequency devices can be enhanced.
The micro-coaxial transmission structure is arranged on the substrate wafer 1 or attached to the substrate wafer 1, the high-frequency device modules in the plane direction are interconnected, and in addition, the high-frequency device modules are interconnected and stacked in the vertical direction by constructing a conductive through hole technology which has excellent conductive performance and is well electrically isolated from the periphery in the vertical direction, so that the interconnection and integration of the high-frequency device modules are realized.
The high-frequency device to be integrated in this embodiment may be a high-frequency MEMS (micro electro mechanical system) module, a high-frequency ASIC (application specific integrated circuit) module, a multi-core module for high-frequency DSP (digital signal processor) high-speed operation, a high-frequency device module in a radio-frequency front-end system (for example, a LNA low noise amplifier, a radio-frequency filter, a duplexer, a multiplexer, or the like), a radio-frequency/millimeter wave, a terahertz ultrahigh-frequency electromagnetic wave device module, or the like. Of course, in practical applications, the high-frequency device to be integrated may also be other non-high-frequency devices.
In a word, the three-dimensional wafer-level heterogeneous airtight integration of the high-frequency device is realized through wafer-level bonding interconnection of the conductive through holes in the vertical direction and wafer-level integrated interconnection of micro-coaxial shafts in the horizontal direction between high-frequency device modules (including a multi-core high-speed digital processor), the trouble of signal distortion and error code distortion of high-speed digital signals can be solved, and the requirements of low insertion loss and high-isolation transmission of high-frequency electromagnetic waves such as radio frequency/microwave/millimeter waves and the like can be met.
The present embodiment can construct a high-frequency device integrated module as shown in fig. 11 based on the high-frequency device integrated module provided as described above. It should be noted that fig. 11 only integrates two integrated modules to construct an integrated module, and a plurality of different or the same integrated modules may also be used to construct different types of modules, and the specific form of the constructed module may be set according to actual situations.
The high-frequency device integrated module comprises two integrated modules (the two integrated modules mentioned in the embodiment can only comprise two integrated modules, and can also comprise more than two integrated modules, the specific number of the integrated modules can be determined according to actual requirements), the two integrated modules are connected through a first conductive channel, and the integrated modules are connected with external accessory devices through the first conductive channel.
As shown in fig. 11, a high frequency device integrated module includes two integrated modules (the two integrated modules refer to an upper integrated module and a lower integrated module, which are denoted as an upper integrated module and a lower integrated module, of an interface between a substrate wafer 1 and a cover wafer 18), the two integrated modules are connected through respective first conductive channels, and any one of the two integrated modules is connected to an external accessory device through the first conductive channel.
The module structure shown in fig. 11 will now be described as follows:
the upper integrated module comprises a cover wafer 3, a heightened component 2, a substrate wafer 1, a high-frequency device A, a high-frequency device B and a micro coaxial transmission structure between the high-frequency device A and the high-frequency device B, and further comprises first conductive channels 15 and 16 on the substrate wafer 1. The lower integrated module comprises a cover wafer 18, a substrate wafer 19, a high-frequency device C, a high-frequency device D, and a micro-coaxial transmission structure between the high-frequency device C and the high-frequency device D, and further comprises first conductive channels 20,21 on the substrate wafer 19 and first conductive channels 22,23 on the cover wafer 18.
Since the electronic device described in this embodiment is an electronic device used for implementing the method for processing information in this embodiment, a person skilled in the art can understand the specific implementation manner of the electronic device of this embodiment and various variations thereof based on the method for processing information described in this embodiment, and therefore, how to implement the method in this embodiment by the electronic device is not described in detail here. Electronic devices used by those skilled in the art to implement the method for processing information in the embodiments of the present application are all within the scope of the present application.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A high frequency device integrated module, the module comprising:
a substrate wafer;
the two high-frequency devices to be integrated are arranged on the substrate wafer and are connected through a micro-coaxial transmission structure;
the cover wafer is provided with a cavity, and one side provided with the cavity is covered on the substrate wafer to form an airtight space, so that the two high-frequency devices to be integrated are placed in the airtight space;
the substrate wafer and/or the cover wafer are/is provided with first conductive through holes, the high-frequency device to be integrated is connected with an external accessory device through the first conductive through holes, and the external accessory device is located outside the airtight space.
2. The module of claim 1, wherein the micro-coaxial transmission structure comprises a cylindrical outer conductor and an inner conductor disposed inside the outer conductor, the outer conductor being insulated from the inner conductor.
3. The module of claim 2, wherein the module further comprises:
and the connecting conductor is arranged between the inner conductor and the high-frequency device to be integrated and is used for connecting the inner conductor and the high-frequency device to be integrated.
4. The module of claim 3, wherein the module further comprises:
and the planting ball is arranged between the inner conductor and the connecting conductor and used for welding the inner conductor and the connecting conductor.
5. The module of claim 1, wherein the first conductive via comprises a sleeve conductor and a cylindrical conductor disposed on a central axis of the sleeve conductor, the sleeve conductor insulated from the cylindrical conductor.
6. The module of claim 1, wherein the module further comprises:
and the heightening component is arranged between the cover wafer and the substrate wafer and is used for increasing the airtight space.
7. The module of claim 6, wherein the raised features comprise second conductive vias connected with the first conductive vias of the cap wafer and/or the substrate wafer.
8. The module of claim 1, wherein the micro-coaxial transmission structure has a shape of a predetermined shape.
9. The module of claim 1, wherein the module comprises:
and the air suction film is arranged in the cavity of the cover wafer.
10. A high frequency device integrated module, comprising two integrated modules according to any one of claims 1 to 9, wherein the two integrated modules are connected by a first conductive path, and the integrated modules are connected to the external accessory device by the first conductive path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110788987.8A CN113555332A (en) | 2021-07-13 | 2021-07-13 | High-frequency device integrated module and high-frequency device integrated module group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110788987.8A CN113555332A (en) | 2021-07-13 | 2021-07-13 | High-frequency device integrated module and high-frequency device integrated module group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113555332A true CN113555332A (en) | 2021-10-26 |
Family
ID=78103042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110788987.8A Pending CN113555332A (en) | 2021-07-13 | 2021-07-13 | High-frequency device integrated module and high-frequency device integrated module group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113555332A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284671A (en) * | 2021-12-02 | 2022-04-05 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| CN115863949A (en) * | 2022-12-27 | 2023-03-28 | 航科新世纪科技发展(深圳)有限公司 | Manufacturing method of micro-coaxial structure and micro-coaxial structure |
-
2021
- 2021-07-13 CN CN202110788987.8A patent/CN113555332A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284671A (en) * | 2021-12-02 | 2022-04-05 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| CN114284671B (en) * | 2021-12-02 | 2022-10-11 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| CN115863949A (en) * | 2022-12-27 | 2023-03-28 | 航科新世纪科技发展(深圳)有限公司 | Manufacturing method of micro-coaxial structure and micro-coaxial structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6307450B2 (en) | Millimeter wave module and radio apparatus | |
| US6512431B2 (en) | Millimeterwave module compact interconnect | |
| US4641140A (en) | Miniaturized microwave transmission link | |
| US5644277A (en) | Three-wire-line vertical interconnect structure for multilevel substrates | |
| US5451818A (en) | Millimeter wave ceramic package | |
| EP2428989B1 (en) | High-frequency circuit package and high-frequency circuit device | |
| JP5269902B2 (en) | High frequency substrate and high frequency module | |
| CN113555332A (en) | High-frequency device integrated module and high-frequency device integrated module group | |
| US11706851B2 (en) | RF circuit and enclosure having a micromachined interior using semiconductor fabrication | |
| US8022784B2 (en) | Planar transmission line-to-waveguide transition apparatus having an embedded bent stub | |
| CN110797616B (en) | Multilayer digital-analog mixed pressing plate based on substrate integrated coaxial line structure | |
| US6778041B2 (en) | Millimeter wave module and radio apparatus | |
| JPH11289201A (en) | Dielectric filter, transmitter-receiver and communication equipment | |
| CN114040672A (en) | Radio frequency chip shielding device and manufacturing method thereof | |
| US6549105B2 (en) | Millimeter wave module and radio apparatus | |
| JP3631667B2 (en) | Wiring board and its connection structure with waveguide | |
| US6646526B2 (en) | Surface mountable microwave filter configuration and method of fabricating same | |
| CN212908021U (en) | Three-dimensional vertical interconnection structure based on HTCC process and T/R assembly | |
| CN114006136B (en) | High-isolation three-dimensional microsystem structure | |
| Mueller | SMD-type 42 GHz waveguide filter | |
| JP4206185B2 (en) | High frequency semiconductor device | |
| JP2002185222A (en) | Wiring board | |
| US11824019B2 (en) | Chip package with substrate integrated waveguide and waveguide interface | |
| CN115343812B (en) | Input/output component, preparation method, package base and optical device | |
| JP3605257B2 (en) | Connection structure of high frequency package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |