CN113366657A - 一种目标转移结构及其制造方法、以及发光二极管固定方法 - Google Patents

一种目标转移结构及其制造方法、以及发光二极管固定方法 Download PDF

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CN113366657A
CN113366657A CN201980004136.0A CN201980004136A CN113366657A CN 113366657 A CN113366657 A CN 113366657A CN 201980004136 A CN201980004136 A CN 201980004136A CN 113366657 A CN113366657 A CN 113366657A
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substrate
light emitting
electrode
target
transfer structure
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CN201980004136.0A
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CN113366657B (zh
Inventor
张朋月
黄嘉桦
陈淑枝
陈柏辅
郑士嵩
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

一种目标转移结构及制造方法、发光二极管的固定方法。目标转移结构(99)包括：目标基板(40)，目标基板(40)上设有多对间隔设置的基板电极(10)；多个发光二极管(20)，各发光二极管(20)具有一对半导体电极(200)；以及涂布于目标基板(40)的感光胶层(30)，感光胶层(30)上设有多个通孔(300)，各基板电极(10)和半导体电极(200)插设于通孔内，且各半导体电极(200)与相应的基板电极(10)相对设置。通过在目标基板上涂布感光胶层制造一种具有缓冲功能的目标转移结构，从而缓和发光二极管转移至目标基板时产生的压力，避免损坏发光二极管或目标基板。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201980004136.0A 2019-12-17 2019-12-17 一种目标转移结构及其制造方法、以及发光二极管固定方法 Active CN113366657B (zh)

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PCT/CN2019/125952 WO2021119997A1 (zh) 2019-12-17 2019-12-17 一种目标转移结构及其制造方法、以及发光二极管固定方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114141804A (zh) * 2021-11-23 2022-03-04 深圳市华星光电半导体显示技术有限公司 发光二极管的转移方法、发光基板以及显示面板

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JP2008060127A (ja) * 2006-08-29 2008-03-13 Akita Denshi Systems:Kk 発光ダイオード素子及びその製造方法
CN105990475A (zh) * 2015-02-11 2016-10-05 中国科学院苏州纳米技术与纳米仿生研究所 光电子器件及其制作方法
CN108227375A (zh) * 2018-01-02 2018-06-29 京东方科技集团股份有限公司 一种微型发光二极管转印方法及阵列基板
CN109065677A (zh) * 2018-08-17 2018-12-21 京东方科技集团股份有限公司 Micro-LED巨量转移方法及Micro-LED基板
CN110047785A (zh) * 2019-04-24 2019-07-23 京东方科技集团股份有限公司 Micro LED巨量转移方法及其封装结构、显示装置

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KR101745638B1 (ko) * 2011-01-12 2017-06-09 삼성전자 주식회사 광대역 갭 물질층 기반의 포토 다이오드 소자, 및 그 포토 다이오드 소자를 포함하는, 후면 조명 씨모스 이미지 센서 및 태양 전지
JP2014103133A (ja) * 2011-03-10 2014-06-05 Panasonic Corp 固体撮像装置
CN105206727B (zh) * 2015-10-08 2017-08-04 南京大学 InGaN/GaN多量子阱单纳米柱LED器件及其制备方法
CN106783554A (zh) * 2016-12-13 2017-05-31 深圳顺络电子股份有限公司 一种电子元器件电极的制作方法及电子元器件
TWI689105B (zh) * 2017-12-19 2020-03-21 優顯科技股份有限公司 光電半導體戳記及其製造方法、與光電半導體裝置
CN110071177A (zh) * 2019-05-24 2019-07-30 中国科学院半导体研究所 肖特基二极管及其制备方法、半导体功率器件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060127A (ja) * 2006-08-29 2008-03-13 Akita Denshi Systems:Kk 発光ダイオード素子及びその製造方法
CN105990475A (zh) * 2015-02-11 2016-10-05 中国科学院苏州纳米技术与纳米仿生研究所 光电子器件及其制作方法
CN108227375A (zh) * 2018-01-02 2018-06-29 京东方科技集团股份有限公司 一种微型发光二极管转印方法及阵列基板
CN109065677A (zh) * 2018-08-17 2018-12-21 京东方科技集团股份有限公司 Micro-LED巨量转移方法及Micro-LED基板
CN110047785A (zh) * 2019-04-24 2019-07-23 京东方科技集团股份有限公司 Micro LED巨量转移方法及其封装结构、显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114141804A (zh) * 2021-11-23 2022-03-04 深圳市华星光电半导体显示技术有限公司 发光二极管的转移方法、发光基板以及显示面板

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CN113366657B (zh) 2023-05-16
WO2021119997A1 (zh) 2021-06-24

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