CN113363334A - Preparation method of boron-doped selective emitter - Google Patents
Preparation method of boron-doped selective emitter Download PDFInfo
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- CN113363334A CN113363334A CN202110607719.1A CN202110607719A CN113363334A CN 113363334 A CN113363334 A CN 113363334A CN 202110607719 A CN202110607719 A CN 202110607719A CN 113363334 A CN113363334 A CN 113363334A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000007639 printing Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims description 28
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 13
- 229910004205 SiNX Inorganic materials 0.000 claims description 12
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a preparation method of a boron-doped selective emitter, which comprises the steps of depositing a BSG layer on the surface of a textured silicon wafer, then locally covering a mask layer on the surface of the BSG layer to enable the covering area of the mask layer to be consistent with the metal electrode printing area on the surface of the silicon wafer, then carrying out high-temperature propulsion on the silicon wafer, and then removing the BSG layer and the mask layer on the silicon wafer. According to the preparation method of the boron-doped selective emitter, after the BSG layer is deposited, only the mask layer needs to be covered locally, and the SE structure can be prepared by high-temperature propulsion under the condition that the BSG layer is not removed.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a preparation method of a boron-doped selective emitter.
Background
Due to the advantages of long minority carrier lifetime, low temperature coefficient, no photo-thermal induced attenuation caused by B-O recombination and the like, the N-type crystalline silicon cell becomes the key development direction of a new generation of efficient solar cell and is more and more concerned by the industry. The existing mature N-type crystalline silicon battery mainly comprises N-PERT, N-PERL, N-TOPCon, N-IBC and other structural batteries.
The Selective Emitter Structure (SE) realizes the optimization of the Emitter region by carrying out heavy doping in the electrode contact region and light doping between the electrodes, so that the contact resistance between a metal electrode and a silicon wafer can be reduced, the carrier recombination in a diffusion layer region can be reduced, the output voltage and the current of a battery are enhanced, and the efficiency of the battery can be obviously improved.
The SE structure of phosphorus is currently used in industrial production, but the SE structure of boron has not been effectively used. At present, some preparation methods aiming at boron SE structures exist in the industry, and the preparation methods are mainly divided into the following two main types: (1) the boron SE structure is prepared by combining a mask method with a secondary boron diffusion method, a mask layer is grown on a silicon substrate in advance, then a local area is etched to form a window, then primary boron diffusion is carried out to form heavy doping, and secondary boron diffusion is carried out to form light doping after the mask is removed; (2) the laser SE method mainly realizes heavy doping through laser propulsion of a local area after a boron source is deposited or coated, realizes light doping in other laser-free areas, and further realizes an SE structure.
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide a preparation method of a boron-doped selective emitter, which comprises the steps of depositing a BSG (borosilicate glass) layer on the surface of a textured silicon wafer, then locally covering a mask layer on the surface of the BSG layer to enable the covering area of the mask layer to be consistent with the metal electrode printing area on the surface of the silicon wafer, then carrying out high-temperature propulsion on the silicon wafer, and then removing the BSG layer and the mask layer on the silicon wafer.
Preferably, the step of depositing the BSG layer on the surface of the textured silicon wafer comprises the following steps: and (3) placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion, so that a layer of BSG (boron nitride) layer and a shallow boron junction are obtained on the surface of the silicon wafer.
Preferably, the mask layer is a SiNx layer or a SiOxNy layer.
Preferably, the step of locally covering the surface of the BSG layer with a mask layer includes the following steps: and (3) screen-printing SiNx slurry or SiOxNy slurry in a local area on the surface of the BSG layer, and forming a SiNx layer or SiOxNy layer in the local area, wherein the local area is consistent with a metal electrode printing area on the surface of the silicon wafer.
Preferably, a chain type diffusion furnace or a tubular diffusion furnace is adopted to carry out high-temperature propulsion on the silicon wafer, the chain type diffusion furnace is provided with five temperature regions, the silicon wafer sequentially passes through a furnace inlet region, a temperature rising region, a constant temperature region, a cooling region and a furnace outlet region, the temperature of the constant temperature region is controlled to be 1100 ℃, and the silicon wafer is propelled at the constant temperature region for 200-fold-over-1000 s.
Preferably, a tubular diffusion furnace is adopted to carry out high-temperature propulsion on the silicon wafer, and nitrogen and oxygen are introduced into the tubular diffusion furnace during the high-temperature propulsion.
Preferably, the temperature of the tubular diffusion furnace is controlled to be 950-.
Preferably, the BSG layer and the mask layer on the silicon wafer are cleaned and removed by using a cleaning solution containing HF.
The invention has the advantages and beneficial effects that: the preparation method of the boron-doped selective emitter is provided, after the BSG layer is deposited, only a mask layer needs to be covered locally, and the SE structure can be prepared by high-temperature propulsion under the condition that the BSG layer is not removed.
According to the invention, the mask layer is selectively covered on the local area (namely the metal electrode printing area, hereinafter referred to as the electrode area) on the surface of the BSG layer, so that the boron diffusion of the electrode area to the environment atmosphere during the subsequent high-temperature propulsion is inhibited. Specifically, the method comprises the following steps: in the process of high-temperature propulsion, the electrode region is covered with the mask layer (SiNx layer or SiOxNy layer), so that boron in the silicon surface and the BSG layer of the electrode region can be inhibited from diffusing and escaping into the ambient atmosphere (air), more boron sources in the electrode region can diffuse into the silicon substrate, and the boron concentration obtained in the electrode region is higher and the junction depth is deeper; because the non-electrode area is not covered with the mask layer, a large amount of boron in the silicon surface and the BSG layer of the non-electrode area can diffuse and escape into the environment atmosphere in the high-temperature propelling process, and the boron obtained by the non-electrode area has low concentration and shallow junction depth; the selective emitter can be prepared by utilizing the difference between the electrode area and the non-electrode area.
If the tube type diffusion furnace is adopted for high-temperature propulsion, nitrogen and oxygen in a certain proportion can be introduced into the tube type diffusion furnace, and boron in the BSG layer of the non-electrode area can be promoted to diffuse into the ambient atmosphere in the oxygen environment.
The invention has the following characteristics:
1. the invention has less process steps and low cost, and the SE structure can be prepared by only covering a mask layer (SiNx layer or SiOxNy layer) on an electrode area after the BSG layer is deposited and advancing at high temperature under the condition of not removing the BSG layer.
2. The invention has high feasibility and can directly utilize the existing industrial equipment.
3. The invention can use chain type propulsion and can increase the productivity compared with a tubular type.
4. The invention has wide application prospect.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a preparation method of a boron-doped selective emitter, which comprises the steps of depositing a BSG (borosilicate glass) layer on the surface of a textured silicon wafer, covering a mask layer (a SiNx layer or an SiOxNy layer) in a local area (namely a metal electrode printing area, hereinafter referred to as an electrode area) on the surface of the BSG layer to enable the covering area of the mask layer to be consistent with the metal electrode printing area on the surface of the silicon wafer, then carrying out high-temperature propulsion on the silicon wafer, and then removing the BSG layer and the mask layer on the silicon wafer.
The specific embodiment of the invention is as follows:
1) texturing: selecting an N-type silicon wafer to carry out conventional cleaning and texturing;
2) depositing a BSG layer on the surface of the textured silicon wafer: placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion to obtain a BSG layer and a shallow boron junction on the surface of the silicon wafer; after completion of the tube deposition and slight drive-in, the peak concentration of boron doping was 2E20cm-3The depth of the boron junction is 100nm, the thickness of the BSG layer is 20nm, and the sheet resistance is about 200 ohms;
3) covering a mask layer (a SiNx layer or a SiOxNy layer) on the surface of the BSG layer locally:
silk-screen printing SiNx slurry or SiOxNy slurry on a local area on the surface of the BSG layer, forming a SiNx layer or SiOxNy layer on the local area, wherein the local area is consistent with a metal electrode printing area on the surface of a silicon wafer; the width of the pattern of the silk-screen printing is 100 um;
4) carrying out high-temperature propulsion on the silicon wafer:
the silicon chip is subjected to high-temperature propulsion by adopting a chain type diffusion furnace or a tubular diffusion furnace, the chain type diffusion furnace is provided with five temperature zones, the speed of a conveyor belt is 100cm/min, the silicon chip sequentially passes through a furnace inlet zone, a temperature rising zone, a constant temperature zone, a temperature reduction zone and a furnace outlet zone, the temperature of the constant temperature zone is controlled to be 1100-;
or,
the silicon chip is propelled at high temperature by adopting a tubular diffusion furnace, nitrogen and oxygen are introduced into the tubular diffusion furnace, and the gas flow is O2:N2The temperature of the tubular diffusion furnace is controlled to be 950-;
5) and cleaning and removing the BSG layer and the mask layer on the silicon wafer by using a cleaning solution containing HF.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A preparation method of a boron-doped selective emitter is characterized in that a BSG layer is deposited on the surface of a textured silicon wafer, then a mask layer is partially covered on the surface of the BSG layer, the covering area of the mask layer is enabled to be consistent with the metal electrode printing area on the surface of the silicon wafer, then the silicon wafer is propelled at high temperature, and then the BSG layer and the mask layer on the silicon wafer are removed.
2. The method for preparing the boron-doped selective emitter according to claim 1, wherein the step of depositing the BSG layer on the surface of the textured silicon wafer comprises the following steps: and (3) placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion, so that a layer of BSG (boron nitride) layer and a shallow boron junction are obtained on the surface of the silicon wafer.
3. The method of claim 1, wherein the mask layer is a SiNx layer or a SiOxNy layer.
4. The method for preparing the boron-doped selective emitter according to claim 3, wherein the step of partially covering a mask layer on the surface of the BSG layer comprises the following steps: and (3) screen-printing SiNx slurry or SiOxNy slurry in a local area on the surface of the BSG layer, and forming a SiNx layer or SiOxNy layer in the local area, wherein the local area is consistent with a metal electrode printing area on the surface of the silicon wafer.
5. The method for preparing the boron-doped selective emitter according to claim 1, wherein the silicon wafer is advanced at a high temperature by using a chain type diffusion furnace or a tubular type diffusion furnace, the chain type diffusion furnace is provided with a constant temperature region, the temperature of the constant temperature region is controlled at 1100 ℃, and the silicon wafer is advanced at the constant temperature region for 200 seconds.
6. The method for preparing the boron-doped selective emitter according to claim 1, wherein a tubular diffusion furnace is used for propelling the silicon wafer at a high temperature, and nitrogen and oxygen are introduced into the tubular diffusion furnace during propelling at the high temperature.
7. The method as claimed in claim 6, wherein the temperature of the tubular diffusion furnace is controlled at 950-1050 ℃ and the time of the high temperature is 600-3000 s.
8. The method of claim 1, wherein the BSG layer and the mask layer are removed from the silicon wafer using a cleaning solution containing HF.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110607719.1A CN113363334A (en) | 2021-06-01 | 2021-06-01 | Preparation method of boron-doped selective emitter |
| CN202210000228.5A CN114497242A (en) | 2021-06-01 | 2022-01-01 | Preparation method and application of boron-doped selective emitter |
| PCT/CN2022/119038 WO2023124254A1 (en) | 2021-06-01 | 2022-09-15 | Preparation method for and use of boron-doped selective emitter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110607719.1A CN113363334A (en) | 2021-06-01 | 2021-06-01 | Preparation method of boron-doped selective emitter |
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| CN113363334A true CN113363334A (en) | 2021-09-07 |
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| CN202110607719.1A Pending CN113363334A (en) | 2021-06-01 | 2021-06-01 | Preparation method of boron-doped selective emitter |
| CN202210000228.5A Pending CN114497242A (en) | 2021-06-01 | 2022-01-01 | Preparation method and application of boron-doped selective emitter |
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| WO (1) | WO2023124254A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114479658A (en) * | 2022-01-01 | 2022-05-13 | 常州时创能源股份有限公司 | Mask adhesive for SE doping and preparation method and application thereof |
| CN115020536A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of IBC battery graphical P region |
| WO2023045279A1 (en) * | 2021-09-23 | 2023-03-30 | 常州时创能源股份有限公司 | Method for preparing boron-doped selective emitter battery |
| WO2023124254A1 (en) * | 2021-06-01 | 2023-07-06 | 常州时创能源股份有限公司 | Preparation method for and use of boron-doped selective emitter |
| CN118231529A (en) * | 2024-05-23 | 2024-06-21 | 英利能源发展有限公司 | SE-TOPCon battery and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464700A (en) * | 2022-01-17 | 2022-05-10 | 常州时创能源股份有限公司 | Selective boron doping method of N-type crystalline silicon battery and application thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5414298B2 (en) * | 2009-02-13 | 2014-02-12 | 信越化学工業株式会社 | Manufacturing method of solar cell |
| FR2959351B1 (en) * | 2010-04-26 | 2013-11-08 | Photowatt Int | PROCESS FOR PREPARING AN N + PP + TYPE OR P + NN + TYPE STRUCTURE ON SILICON PLATES |
| CN102437238A (en) * | 2011-11-30 | 2012-05-02 | 晶澳（扬州）太阳能科技有限公司 | Method for boron doping of crystalline silicon solar battery |
| CN103151428A (en) * | 2013-03-26 | 2013-06-12 | 浙江晶科能源有限公司 | Method for realizing selective emitter of crystalline silicon solar cell |
| CN105576083A (en) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | N-type double-side solar cell based on APCVD technology and preparation method thereof |
| CN109671807A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of preparation method of solar battery |
| CN111628047B (en) * | 2020-06-01 | 2023-02-28 | 常州顺风太阳能科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
| CN111739982B (en) * | 2020-06-30 | 2022-10-11 | 浙江晶科能源有限公司 | Preparation method of selective emitter and solar cell |
| CN112490304A (en) * | 2020-12-04 | 2021-03-12 | 东方日升（常州）新能源有限公司 | Preparation method of high-efficiency solar cell |
| CN113363334A (en) * | 2021-06-01 | 2021-09-07 | 常州时创能源股份有限公司 | Preparation method of boron-doped selective emitter |
-
2021
- 2021-06-01 CN CN202110607719.1A patent/CN113363334A/en active Pending
-
2022
- 2022-01-01 CN CN202210000228.5A patent/CN114497242A/en active Pending
- 2022-09-15 WO PCT/CN2022/119038 patent/WO2023124254A1/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023124254A1 (en) * | 2021-06-01 | 2023-07-06 | 常州时创能源股份有限公司 | Preparation method for and use of boron-doped selective emitter |
| WO2023045279A1 (en) * | 2021-09-23 | 2023-03-30 | 常州时创能源股份有限公司 | Method for preparing boron-doped selective emitter battery |
| CN114479658A (en) * | 2022-01-01 | 2022-05-13 | 常州时创能源股份有限公司 | Mask adhesive for SE doping and preparation method and application thereof |
| CN115020536A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of IBC battery graphical P region |
| CN118231529A (en) * | 2024-05-23 | 2024-06-21 | 英利能源发展有限公司 | SE-TOPCon battery and preparation method thereof |
| CN118231529B (en) * | 2024-05-23 | 2024-08-23 | 英利能源发展有限公司 | SE-TOPCon battery and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023124254A1 (en) | 2023-07-06 |
| CN114497242A (en) | 2022-05-13 |
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