CN113314617A - 一种软快恢复二极管及其制备方法 - Google Patents
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Abstract
本发明提供的一种软快恢复二极管;包括N区和P区,P区扩散在N区上端面中部的凹槽内,所述N区包括依次在N+区上生长的N缓冲区和外延区,所述P区包括P base区和P+区,P base区嵌入外延区的上端面中部,所述P+区扩散在P base区的两端,所述外延区的上端面外端制作有钝化层,外延区的中心制作有阳极金属层,N+区的底部制作有金属层。本发明通过超低掺杂浓度的N型漂移区和低掺杂浓度的P base区可以有效地可以有效的降低反向恢复电荷和反向恢复时间;N型漂移区下表面的N型缓冲层可以缓冲空间电荷区扩展,减缓了载流子反向抽取速度,使恢复特性得到软化;并且高掺杂的深结P+区可以有效抑制电场集中,降低器件反向漏电。
Description
技术领域
本发明涉及一种软快恢复二极管及其制备方法。
背景技术
现有技术中的快恢复二极管其主要结构包括:轻掺杂N型漂移区;位于所述轻掺杂N型漂移区表面的重掺杂P型区;位于所述重掺杂P型区表面的阳极金属层;位于所述轻掺杂N型漂移区下表面的重掺杂N型衬底层;位于所述重掺杂N型衬底层表面的阴极金属层。
当器件在正向导通时,轻掺杂N型漂移区和重掺杂P型区内存储有大量的少数载流子空穴和电子;当器件关断时,其耗尽区在轻掺杂N型漂移区与重掺杂P型区向外扩展;由于轻掺杂漂移区一侧的浓度较低,器件关断时,耗尽区主要向轻掺杂一侧扩展;在耗尽区扩展的过程中,耗尽区所经过的区域少数载流子被迅速扫出,造成反向恢复电流迅速减少到0,FRD软度较差,导致回路中产生了较大的过冲电压,进而引起系统电路元件损坏。
发明内容
为解决上述技术问题,本发明提供了一种软快恢复二极管及其制备方法。
本发明通过以下技术方案得以实现。
本发明提供的一种软快恢复二极管;包括N区和P区,P区扩散在N区上端面中部的凹槽内,所述N区包括依次在N+区上生长的N缓冲区和外延区,所述P区包括P base区和P+区,P base区嵌入外延区的上端面中部,所述P+区扩散在P base区的两端,所述外延区的上端面外端制作有钝化层,外延区的中心制作有阳极金属层,N+区的底部制作有金属层。
本申请是一种双基区结构,下面为N+区,上面分别为双基区的N区和N-区,有源区采用低掺杂浓度P base浅结结构,结终端采用的是高掺杂浓度的P+深结结构,当正向导通时,低掺杂浓度的P base区可以有效地降低反向恢复电荷、反向恢复时间和抑制反向恢复峰值电流的作用,当器件处于反向偏置时,二极管的N区缓冲层可以缓冲空间电荷区的扩展,缩短基区宽度和降低通态电压;并且N-N与NN+界面的电场减缓了载流子反向抽取速度,使得在N区缓冲层存储有更多的电荷用于复合,使恢复特性得到软化;并且高掺杂浓度的深结P+区可以有效抑制电场集中,降低器件的反向漏电流。
所述金属层包括依次覆盖在N+区底部的钛层、镍层、银层。
所述阳极金属层中部与P base区接触,阳极金属层的边缘搭接在钝化层的上端面上。
所述P+区对称镶嵌在P base区的两端且部分融合在P base区内。
一种软快恢复二极管的制备方法,其步骤为:
1)制作衬底,在衬底上端面依次生长N缓冲层和N-外延层;
2)在N-外延层上通过热氧化生长氧化层;
3)在氧化层中部两端进行光刻、刻蚀出两个对称的P+区扩散窗口;
4)在窗口内进行P+区硼预扩、P+区硼主扩散,并生长热氧化层;
5)对晶圆进行光刻、刻蚀出P base区离子注入窗口;
6)进行P base区硼注入、推阱;
7)在晶圆表面进行进行磷硅玻璃和氮化硅薄膜淀积形成钝化层;
8)将衬底底部减薄;
9)在衬底底部进行铂扩散;
10)在晶圆表面进行氮化硅、磷硅玻璃和氧化硅光刻形成蒸发窗口;
11)对晶圆进行金属Al蒸发,并进行金属刻蚀;
12)对晶圆进行正面金属Al合金;
13)进行衬底减薄;
14)在衬底底部进行金属化,依次为钛、镍、银。
所述N缓冲区和N-外延区的厚度均为6~7μm,电阻分别为2~3Ω·cm和30~35Ω·cm。
所述氧化层采用干氧+湿氧+干氧工艺氧化层生长温度为1000~1100℃,生长时间为80~120min。
P+区硼预扩扩散源采用固态扩散源,预扩散温度和时间分别为1080~1010℃,50~65min;P+区硼主扩散采用氧化+推阱的方式,硼主扩散温度和时间分别为1120~1160℃,160~175min。
所述P base区硼注入的注入剂量和能量分别为5e15cm-2、100keV,然后通过氧化+推阱的方式进行硼主扩散,硼主扩散温度和时间分别为1030~1060℃、70~90min。
所述钝化层首先采用PECVD方式淀积薄膜厚度为0.45~0.55um的磷硅玻璃PSG;然后采用LPCVD方式淀积薄膜厚度为0.25~0.35um的氮化硅Si3N4。
本发明的有益效果在于:通过超低掺杂浓度的N型漂移区和低掺杂浓度的P base区可以有效地可以有效的降低反向恢复电荷和反向恢复时间;N型漂移区下表面的N型缓冲层可以缓冲空间电荷区扩展,减缓了载流子反向抽取速度,使恢复特性得到软化;并且高掺杂的深结P+区可以有效抑制电场集中,降低器件反向漏电。
附图说明
图1是本发明的结构示意图;
图中:1-N+区,2-N缓冲区,3-N-外延区,4-P base区,5-P+区,6-钝化层,7-阳极金属层,8-钛层,9-镍层,10-银层。
具体实施方式
下面进一步描述本发明的技术方案,但要求保护的范围并不局限于所述。
一种软快恢复二极管;包括N区和P区,P区扩散在N区上端面中部的凹槽内,所述N区包括依次在N+区1上生长的N缓冲区2和外延区3,所述P区包括P base区4和P+区5,P base区4嵌入外延区3的上端面中部,所述P+区5扩散在P base区4的两端,所述外延区3的上端面外端制作有钝化层6,外延区3的中心制作有阳极金属层7,N+区1的底部制作有金属层。
本申请的二极管通过超低掺杂浓度的N型漂移区和低掺杂浓度的P base区可以有效地可以有效的降低反向恢复电荷和反向恢复时间;N型漂移区下表面的N型缓冲层可以缓冲空间电荷区扩展,减缓了载流子反向抽取速度,使恢复特性得到软化;并且高掺杂的深结P+区可以有效抑制电场集中,降低器件反向漏电。
实施例1:
如图1所示的二极管芯片结构,其中包括N+区1,N缓冲区2,N-外延区3,P base区4,P+区5,钝化层6。其特征是:P+区5左右对称的镶嵌在P base区4两侧,其与P base区4有一部分重合。
P+区结深为4-5um,P+区表面方块电阻为5-7Ω/□,且两侧P+区5宽度为50um。
Pbase区结深为1.5-2um,P base区表面方块电阻为30-40Ω/□。
钝化层6为磷硅玻璃PSG和氮化硅Si3N4复合钝化层,厚度0.8-0.9um。磷硅玻璃PSG厚度为0.5-0.6um,氮化硅Si3N4厚度为0.3-0.4um。
上述二极管通过以下步骤制作:
1.制作衬底,选取<111>晶向N型抛光片材料,按现有技术生长双层外延,外延参数分别为2Ω·cm、6um和30Ωcm、6um。
2.进行一次氧化,氧化层的生长温度为1050℃,生长时间为95min,氧化层采用干氧+湿氧+干氧工艺。
3.采用现有技术刻蚀氧化层,形成P+区扩散窗口。
4.进行硼预扩散,扩散源采用固态扩散源,预扩散温度和时间分别为1100℃,60min;然后进行硼主扩散(氧化+推阱),硼主扩散温度和时间分别为1150℃,170min。
5.采用现有技术刻蚀氧化层,形成P base区离子注入窗口。
6.进行硼离子注入,注入剂量和能量分别为5e15cm-2、100keV,然后进行硼主扩散(氧化+推阱),硼主扩散温度和时间分别为1050℃、80min。
7.采用PECVD方式淀积磷硅玻璃PSG,淀积薄膜厚度为0.5um;然后采用LPCVD方式淀积氮化硅Si3N4,淀积薄膜厚度为0.3um。
8.进行背面减薄,硅片厚度减薄至250±10um,然后进行背面铂扩散工艺,铂源为液态源,铂扩散温度和时间分别为950min、1h。
9.采用现有技术刻蚀Si3N4、PSG、SiO2,形成金属接触孔。
10.正面蒸发Al金属,厚度为3-4um,按照现有技术刻蚀Al金属,形成正面电极,然后进行金属合金,合金温度和时间分别为400℃、30min。
11.进行背面减薄,硅片厚度减薄至200±10um,然后进行背面金属化,背面金属分别为钛/镍/银,其厚度分别为0.1±0.01um/0.6±0.1um/0.8±0.1um。
表1实施例1工艺产生的二极管参数
Claims (10)
1.一种软快恢复二极管,其特征在于:包括N区和P区,P区扩散在N区上端面中部的凹槽内,所述N区包括依次在N+区(1)上生长的N缓冲区(2)和外延区(3),所述P区包括P base区(4)和P+区(5),P base区(4)嵌入外延区(3)的上端面中部,所述P+区(5)扩散在P base区(4)的两端,所述外延区(3)的上端面外端制作有钝化层(6),外延区(3)的中心制作有阳极金属层(7),N+区(1)的底部制作有金属层。
2.如权利要求1所述的软快恢复二极管,其特征在于:所述金属层包括依次覆盖在N+区(1)底部的钛层(8)、镍层(9)、银层(10)。
3.如权利要求1所述的软快恢复二极管,其特征在于:所述阳极金属层(7)中部与Pbase区(4)接触,阳极金属层(7)的边缘搭接在钝化层(6)的上端面上。
4.如权利要求1所述的软快恢复二极管,其特征在于:所述P+区(5)对称镶嵌在P base区(4)的两端且部分融合在P base区(4)内。
5.一种软快恢复二极管的制备方法,其步骤为:
1)制作衬底,在衬底上端面依次生长N缓冲层和N-外延层;
2)在N-外延层上通过热氧化生长氧化层;
3)在氧化层中部两端进行光刻、刻蚀出两个对称的P+区扩散窗口;
4)在窗口内进行P+区硼预扩、P+区硼主扩散,并生长热氧化层;
5)对晶圆进行光刻、刻蚀出P base区离子注入窗口;
6)进行P base区硼注入、推阱;
7)在N-外延层、P+区、P base区表面上进行磷硅玻璃和氮化硅薄膜淀积形成钝化层;
8)将衬底底部减薄;
9)在衬底底部进行铂扩散;
10)进行氮化硅、磷硅玻璃和氧化硅光刻形成蒸发窗口;
11)在蒸发窗口进行金属Al蒸发,并进行金属刻蚀形成正面金属电极;
12)对晶圆进行正面金属Al合金;
13)进行衬底减薄;
14)在衬底底部进行金属化,依次为钛、镍、银。
6.如权利要求5所述的软快恢复二极管的制备方法,其特征在于:所述N缓冲区和N-外延区的厚度均为6~7μm,电阻分别为2~3Ω·cm和30~35Ω·cm。
7.如权利要求5所述的软快恢复二极管的制备方法,其特征在于:所述氧化层采用干氧+湿氧+干氧工艺氧化层生长温度为1000~1100℃,生长时间为80~120min。
8.如权利要求5所述的软快恢复二极管的制备方法,其特征在于:P+区硼预扩扩散源采用固态扩散源,预扩散温度和时间分别为1080~1010℃,50~65min;P+区硼主扩散采用氧化+推阱的方式,硼主扩散温度和时间分别为1120~1160℃,160~175min。
9.如权利要求5所述的软快恢复二极管的制备方法,其特征在于:所述P base区硼注入的注入剂量和能量分别为5e15cm-2、100keV,然后通过氧化+推阱的方式进行硼主扩散,硼主扩散温度和时间分别为1030~1060℃、70~90min。
10.如权利要求5所述的软快恢复二极管的制备方法,其特征在于:所述钝化层首先采用PECVD方式淀积薄膜厚度为0.45~0.55um的磷硅玻璃PSG;然后采用LPCVD方式淀积薄膜厚度为0.25~0.35um的氮化硅Si3N4。
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