CN111244171A - 一种沟槽rc-igbt器件结构及其制作方法 - Google Patents
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Abstract
一种沟槽RC‑IGBT器件结构及其制作方法,主要包括N型衬底及设置在N型衬底顶部的P阱层,所述P阱层上通过第一接触孔和第二接触孔连接有金属层,所述第一接触孔两侧的P阱层内朝向N型衬底一侧分别设置有沟槽,该沟槽内通过氧化层设置有与沟槽形状对应的多晶硅层,所述N型衬底靠近第一接触孔的一侧设置有与P阱层接触的N型电荷储存层,所述N型衬底的底部设置有N型场终止层;所述金属层为阶梯状结构,且第一接触孔上部金属层的高度高于第二接触孔上部金属层的高度,所述金属层及金属层覆盖区域依次形成了IGBT单胞区及FRD单胞区,N型衬底上未设置金属层的一侧形成了终端区域;它具有工艺控制简单,与通用的沟槽型IGBT工艺兼容等特点。
Description
技术领域
本发明属于半导体器件制造技术领域,具体涉及一种沟槽RC-IGBT器件结构及其制作方法。
背景技术
现代电力电子电路中的主回路不论是采用换流关断的晶闸管,还是采用有自关断能力的新型电力电子器件,如GTO,MOSFET,IGBT等,都需要一个与之并联的功率快恢复二极管,以通过负载中的无功电流,减小主开关器件电容的充电时间,同时抑制因负载电流瞬时反向时由寄生电感感应产生的高电压。
作为新型电力半导体器件的主要代表,IGBT被广泛用于工业、信息、新能源、医学、交通、军事和航空领域。目前,市场上的IGBT器件的耐压高达6500V,单管芯电流高达200A,频率达到300KHz。在高频大功率领域,目前还没有任何一个其它器件可以代替它。随着半导体材料和加工工艺的不断进步,采用沟槽技术的IGBT器件已成为主流产品。同时对沟槽IGBT器件电学性能的要求也越来越高。在实际应用中,为了精简封装工艺以及成品尺寸,需要集成IGBT和FRD于一体。现有的RC-IGBT器件由于结构限制,IGBT性能不受影响的情况下无法单独对FRD器件进行少子寿命控制工艺。
发明内容
本发明要解决的技术问题在于,针对现有技术的上述缺陷,提供一种工艺控制简单,与通用的沟槽型IGBT工艺兼容,并且单独可优化FRD性能的沟槽RC-IGBT器件结构及其制作方法。
本发明的目的是通过如下技术方案来完成的,一种沟槽RC-IGBT器件结构,主要包括N型衬底及设置在N型衬底顶部的P阱层,所述P阱层上通过第一接触孔和第二接触孔连接有金属层,所述第一接触孔两侧的P阱层内朝向N型衬底一侧分别设置有沟槽,该沟槽内通过氧化层设置有与沟槽形状对应的多晶硅层,所述N型衬底靠近第一接触孔的一侧设置有与P阱层接触的N型电荷储存层,所述N型衬底的底部设置有N型场终止层;所述金属层为阶梯状结构,且第一接触孔上部金属层的高度高于第二接触孔上部金属层的高度,所述金属层及金属层覆盖区域依次形成了IGBT单胞区及FRD单胞区,N型衬底上未设置金属层的一侧形成了终端区域。
一种沟槽RC-IGBT器件结构的制作方法,所述制作方法包括如下步骤:
(1)在选定的N型衬底或者区熔片上定义有源区,生长场区氧化层;
(2)根据终端结构和有源区单胞的设计,选择性的定义深P阱;
(3)光刻沟槽图形,干法刻蚀硅衬底,此次的沟槽同时定义了有源区栅极沟槽;
(4)生长栅极氧化层,淀积原位参杂的多晶硅材料填充沟槽;然后光刻栅极图形,刻蚀多晶硅形成顶层结构的栅极;
(5)注入P型杂质并扩散形成浅P阱作为沟道区,浅P阱沟道区也可选择形成在定义沟槽之前;
(6)光刻N型源区注入N型杂质,然后淀积氧化层或者氮化硅等绝缘材料并退火致密,光刻接触孔,刻蚀绝缘层裸露出之前形成的所有元胞的P阱区和N型源区硅表面;
(7)注入P型杂质并激活,确保P阱区与顶层金属的欧姆接触;
(8)溅射厚度为4-5um的顶层金属,光刻刻蚀过渡区顶层金属,再淀积一层厚度为0.5-1um的金属并光刻刻蚀;通过氢离子或者氦离子注入进行局部少子寿命控制,淀积钝化层,光刻刻蚀钝化层,合金完成顶层结构的制作;由于过渡期和有源区金属厚度的不同,通过氢离子或者氦离子注入进行局部少子寿命控制不会影响IGBT有源区的特性,从而保证了IGBT和FRD分别的优化;
(9)将硅片背面减薄到特定的厚度,背面注入N型场终止层次,或者不做此注入,然后注入P型并选择性注入N型杂质,通过低温退火或者激光退火形成IGBT集电区或者带有场终止层次的FS-IGBT,同时形成背面的FRD 阴极,最后通过溅射或者蒸发的方法淀积背面金属完成整个RC-IGBT器件的制作过程。
进一步地,步骤(9)中,所述IGBT背面P型参杂通过光刻图形化选择性的只在IGBT有源区注入,避免在过渡区和终端区下面形成P型参杂,这样可优化FRD电流走向,同时有效改进IGBT安全工作区。
本发明的有益技术效果在于:本发明所述的沟槽RC-IGBT器件结构通过IGBT有源区和过渡区的顶层金属厚度差异来对FRD实施局部少子寿命控制,优化FRD器件反向恢复特性,具有工艺控制简单,与通用的沟槽型IGBT工艺兼容,并且可优化FRD性能。
附图说明
图1为本发明所述的沟槽RC-IGBT器件截面结构图;
图2为本发明所述的带有深P阱的沟槽RC-IGBT器件截面结构图;
图3为本发明所述的RC-IGBT俯视图。
具体实施方式
为使本领域的普通技术人员更加清楚地理解本发明的目的、技术方案和优点,以下结合附图和实施例对本发明做进一步的阐述。
为了提高沟槽IGBT器件封装工艺的集成度,已有IGBT和FRD集成与单体芯片的技术 RC-IGBT。但是现有的器件结构,FRD阳极与IGBT发射极共用P型沟道,因而FRD的阳极参杂以及扩散结深不能单独调节。本发明提出一种可调节FRD阳极参杂的器件结构以及实现方法;现有的结构是FRD阳极与IGBT发射极共用P型沟道以及顶层金属,如果对FRD实施少子寿命控制会对IGBT特性有极大影响。
如图1-3所示,本发明所述的一种沟槽RC-IGBT器件结构,主要包括N型衬底及设置在N型衬底顶部的P阱层,所述P阱层上通过第一接触孔和第二接触孔连接有金属层,所述第一接触孔两侧的P阱层内朝向N型衬底一侧分别设置有沟槽,该沟槽内通过氧化层设置有与沟槽形状对应的多晶硅层,所述N型衬底靠近第一接触孔的一侧设置有与P阱层接触的N型电荷储存层,所述N型衬底的底部设置有N型场终止层;所述金属层为阶梯状结构,且第一接触孔上部金属层的高度高于第二接触孔上部金属层的高度,所述金属层及金属层覆盖区域依次形成了IGBT单胞区及FRD单胞区,N型衬底上未设置金属层的一侧形成了终端区域。
一种沟槽RC-IGBT器件结构的制作方法,所述制作方法包括如下步骤:
(1)在选定的N型衬底或者区熔片上定义有源区,生长场区氧化层;
(2)根据终端结构和有源区单胞的设计,选择性的定义深P阱;
(3)光刻沟槽图形,干法刻蚀硅衬底,此次的沟槽同时定义了有源区栅极沟槽;
(4)生长栅极氧化层,淀积原位参杂的多晶硅材料填充沟槽;然后光刻栅极图形,刻蚀多晶硅形成顶层结构的栅极;
(5)注入P型杂质并扩散形成浅P阱作为沟道区,浅P阱沟道区也可选择形成在定义沟槽之前;
(6)光刻N型源区注入N型杂质,然后淀积氧化层或者氮化硅等绝缘材料并退火致密,光刻接触孔,刻蚀绝缘层裸露出之前形成的所有元胞的P阱区和N型源区硅表面;
(7)注入P型杂质并激活,确保P阱区与顶层金属的欧姆接触;
(8)溅射厚度为4-5um的顶层金属,光刻刻蚀过渡区顶层金属,再淀积一层厚度为0.5-1um的金属并光刻刻蚀;通过氢离子或者氦离子注入进行局部少子寿命控制,淀积钝化层,光刻刻蚀钝化层,合金完成顶层结构的制作;由于过渡期和有源区金属厚度的不同,通过氢离子或者氦离子注入进行局部少子寿命控制不会影响IGBT有源区的特性,从而保证了IGBT和FRD分别的优化;
(9)将硅片背面减薄到特定的厚度,背面注入N型场终止层次,或者不做此注入,然后注入P型并选择性注入N型杂质,通过低温退火或者激光退火形成IGBT集电区或者带有场终止层次的FS-IGBT,同时形成背面的FRD 阴极,最后通过溅射或者蒸发的方法淀积背面金属完成整个RC-IGBT器件的制作过程。所述IGBT背面P型参杂通过光刻图形化选择性的只在IGBT有源区注入,避免在过渡区和终端区下面形成P型参杂,这样可优化FRD电流走向,同时有效改进IGBT安全工作区。
本文中所描述的具体实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,但凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (3)
1.一种沟槽RC-IGBT器件结构,其特征在于:主要包括N型衬底及设置在N型衬底顶部的P阱层,所述P阱层上通过第一接触孔和第二接触孔连接有金属层,所述第一接触孔两侧的P阱层内朝向N型衬底一侧分别设置有沟槽,该沟槽内通过氧化层设置有与沟槽形状对应的多晶硅层,所述N型衬底靠近第一接触孔的一侧设置有与P阱层接触的N型电荷储存层,所述N型衬底的底部设置有N型场终止层;所述金属层为阶梯状结构,且第一接触孔上部金属层的高度高于第二接触孔上部金属层的高度,所述金属层及金属层覆盖区域依次形成了IGBT单胞区及FRD单胞区,N型衬底上未设置金属层的一侧形成了终端区域。
2.一种如权利要求1所述沟槽RC-IGBT器件结构的制作方法,其特征在于:所述制作方法包括如下步骤:
(1)在选定的N型衬底或者区熔片上定义有源区,生长场区氧化层;
(2)根据终端结构和有源区单胞的设计,选择性的定义深P阱;
(3)光刻沟槽图形,干法刻蚀硅衬底,此次的沟槽同时定义了有源区栅极沟槽;
(4)生长栅极氧化层,淀积原位参杂的多晶硅材料填充沟槽;然后光刻栅极图形,刻蚀多晶硅形成顶层结构的栅极;
(5)注入P型杂质并扩散形成浅P阱作为沟道区,浅P阱沟道区也可选择形成在定义沟槽之前;
(6)光刻N型源区注入N型杂质,然后淀积氧化层或者氮化硅等绝缘材料并退火致密,光刻接触孔,刻蚀绝缘层裸露出之前形成的所有元胞的P阱区和N型源区硅表面;
(7)注入P型杂质并激活,确保P阱区与顶层金属的欧姆接触;
(8)溅射厚度为4-5um的顶层金属,光刻刻蚀过渡区顶层金属,再淀积一层厚度为0.5-1um的金属并光刻刻蚀;通过氢离子或者氦离子注入进行局部少子寿命控制,淀积钝化层,光刻刻蚀钝化层,合金完成顶层结构的制作;由于过渡期和有源区金属厚度的不同,通过氢离子或者氦离子注入进行局部少子寿命控制不会影响IGBT有源区的特性,从而保证了IGBT和FRD分别的优化;
(9)将硅片背面减薄到特定的厚度,背面注入N型场终止层次,或者不做此注入,然后注入P型并选择性注入N型杂质,通过低温退火或者激光退火形成IGBT集电区或者带有场终止层次的FS-IGBT,同时形成背面的FRD 阴极,最后通过溅射或者蒸发的方法淀积背面金属完成整个RC-IGBT器件的制作过程。
3.根据权利要求2所述的制作方法,其特征在于:步骤(9)中,所述IGBT背面P型参杂通过光刻图形化选择性的只在IGBT有源区注入,避免在过渡区和终端区下面形成P型参杂,这样可优化FRD电流走向,同时有效改进IGBT安全工作区。
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