CN113308208A - 一种抗静电的硅胶保护膜及其制备方法 - Google Patents
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Abstract
本发明公开了一种抗静电的硅胶保护膜，依次包括基材膜、硅胶粘剂层和离型膜保护层；所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶100‑160份、交联剂0.1‑5份、锚固剂0.01‑0.5份、催化剂0.1‑5份、抗静电剂AT‑2000.01‑0.2份、溶剂30‑80份。本发明还公开了抗静电的硅胶保护膜的制备方法。本发明的硅胶保护膜在使用时可以达到撕膜电压≤50V的效果，且胶面电阻可以达到≤109Ω，抗静电效果优异，且制备工艺简单，固化效果好。
Description
技术领域
本发明涉及抗静电保护膜技术领域，尤其涉及一种抗静电的硅胶保护膜及其制备方法。
背景技术
硅胶保护膜是一种主要应用于保护电子产品的屏幕保护膜。目前，主流的硅胶保护膜是PET硅胶屏幕保护膜，适用于手机、电脑、各类屏幕显示器表面保护面膜、镜面玻璃等等表面防刮防尘防辐射保护膜等。其中，具有抗静电功能的硅胶保护膜尤其适用于各类屏幕保护、生产制程过程中电脑键盘等保护以及其他表面低静电要求的保护。目前，市面上的抗静电硅胶保护膜生产加工方法通常是先在基材膜，例如聚对苯二甲酸乙二醇酯(PET)薄膜上涂布一层聚噻吩的抗静电层，接着再涂布硅胶压敏胶。这种方法在生产过程中需要连续涂布两次，生产成本较高，降低了经济效益；CN108384484A提供了一种硅胶防静电保护膜，通过在硅胶粘层中加入抗静电剂，同时在基材膜和离型膜上分别涂覆抗静电剂以达到充分的防静电效果，这种方法也存在制备工艺复杂的问题。
发明内容
基于背景技术存在的技术问题，本发明提出了一种抗静电的硅胶保护膜及其制备方法。
本发明提出的一种抗静电的硅胶保护膜，依次包括基材膜、硅胶粘剂层和离型膜保护层；
所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶100-160份、交联剂0.1-5份、锚固剂0.01-0.5份、催化剂0.1-5份、韩国一信化学AT-200抗静电剂0.01-0.2份、溶剂30-80份。
优选地，所述有机硅压敏胶的粘度为50-25000cps。
优选地，所述有机硅压敏胶为有机硅聚合物压敏胶、有机硅聚合物改性丙烯酸压敏胶、有机硅改性橡胶型压敏胶中的至少一种。
本发明中，交联剂的作用是提高硅胶粘剂层的固化程度。本发明对交联剂不作特别限制，优选为DCP、BPO、DTBP、DBHP、吉世科H-165、陶氏7560、双25中的至少一种。
本发明中，锚固剂的作用是为了提高表面处理能力，改善有机硅压敏胶中树脂的分散性及粘合力，提高粘结强度。本发明对锚固剂不作特别限制，优选为安徽誉鑫新材料YX2506、安徽誉鑫新材料YX2507、安徽誉鑫新材料YX2602、安徽誉鑫新材料YX5502、安徽誉鑫新材料YX5503、陶氏9076、陶氏297中的至少一种。
本发明中，催化剂的作用是提高硅胶粘剂层的固化程度和固化速度。本发明对催化剂不作特别限制，优选为上海矽宝PT-50、贝特利F50040、贝特利F50050、陶氏4500、陶氏4000中的至少一种。
优选地，所述溶剂为甲苯、二甲苯、乙酸乙酯、丁酮、100-200#溶剂油中的至少一种。
优选地，所述基材膜为BOPP膜、BOPET膜、BOPA膜、PET膜、PE膜、PC膜、TAC膜、PP膜、PS膜、PMMA膜、TPU膜、PI膜、PVB膜、PVC膜中的至少一种。
一种所述的抗静电的硅胶保护膜的制备方法，包括：依次将有机硅压敏胶、交联剂、锚固剂、催化剂、AT-200抗静电剂加入溶剂中，搅拌均匀，然后涂布在基材膜上，高温固化形成硅胶粘剂层，然后在所述硅胶粘剂层表面贴合离型膜保护层，即得。
优选地，所述高温固化的固化温度为100-200℃，固化时间为1-3min。
本发明的有益效果如下：
本发明通过在硅胶粘剂中适量添加抗静电剂AT-200，并对硅胶粘剂体系中的催化剂、交联剂等成分及其含量进行优化，从而使固化成膜后形成的硅胶粘剂层具有优良的抗静电性能和很高的固化程度。本发明仅通过对硅胶保护膜中的硅胶粘剂层配方进行优化，而无需对基材膜、离型膜保护层作抗静电处理，即可达到使用时撕膜电压≤50V、胶面电阻≤109Ω的要求，具有生产工艺简单、抗静电效果优异的优点。
附图说明
图1为本发明提出的抗静电的硅胶保护膜的示意图，图中：1-离型膜保护层，2-基材膜，3-硅胶粘剂层。
具体实施方式
下面，通过具体实施例对本发明的技术方案进行详细说明。
下述实施例和对比例中，AT-200抗静电剂的生产厂家为韩国一信化学；交联剂H-165的生产厂家为吉世科；锚固剂9176的生产厂家为陶氏；催化剂4000的生产厂家为陶氏；有机硅压敏胶7666生产厂家为道康宁，粘度为22000cps；
实施例1
一种抗静电的硅胶保护膜，依次包括基材膜、硅胶粘剂层和离型膜保护层；
所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶110份、交联剂H-1651.2份、锚固剂91760.1份、催化剂4000 0.85份、AT-200抗静电剂0.1份、二甲苯60份；
制备抗静电的硅胶保护膜：依次将有机硅压敏胶、交联剂H-165、锚固剂9176、催化剂4000、AT-200抗静电剂加入二甲苯中，搅拌均匀，然后涂布在基材膜上，在150℃下高温固化2min形成硅胶粘剂层，然后在所述硅胶粘剂层表面贴合离型膜保护层，即得。
实施例2
一种抗静电的硅胶保护膜，依次包括基材膜、硅胶粘剂层和离型膜保护层；
所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶100份、交联剂H-1650.1份、锚固剂I-224 0.01份、催化剂4000 0.1份、AT-200抗静电剂0.01份、二甲苯30份；
抗静电的硅胶保护膜的制备方法同实施例1。
实施例3
一种抗静电的硅胶保护膜，依次包括基材膜、硅胶粘剂层和离型膜保护层；
所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶160份、交联剂H-1655份、锚固剂I-224 0.5份、催化剂4000 5份、AT-200抗静电剂0.2份、二甲苯80份；
抗静电的硅胶保护膜的制备方法同实施例1。
对比例1
对比例1与实施例1的区别仅为：采用镍粉作为抗静电剂代替AT-200抗静电剂。
对比例2
对比例2与实施例1的区别仅为：采用上海长濑抗静电剂R3代替AT-200抗静电剂。
对比例3
对比例3与实施例1的区别仅为：采用大月牌抗静电剂XA-21代替AT-200抗静电剂，且抗静电剂XA-21的用量为4.5份。
对比例4
对比例4与实施例1的区别仅为：采用南通雷尚化工抗静电剂LS-200代替AT-200抗静电剂，且抗静电剂LS-200的用量为6份。
将实施例1和对比例1-4制得的硅胶保护膜进行抗静电效果测试，其中撕开电压采用FMX-003静电压测试仪测试，胶面电阻采用PC68型高阻计测试；测试结果如表1所示：
表1硅胶保护膜抗静电测试结果
| 撕开电压(V) | 胶面电阻(Ω) | |
| 实施例1 | ＜50 | 10<sup>9</sup> |
| 对比例1 | 800-900 | 10<sup>12</sup> |
| 对比例2 | ＞12000 | 10<sup>12</sup> |
| 对比例3 | 130 | 10<sup>11</sup> |
| 对比例4 | 100 | 10<sup>10</sup> |
将实施例1和对比例1-4的抗静电效果进行对比，可以看出，本发明采用AT-200抗静电剂，可达到使用时撕膜电压≤50V、胶面电阻≤109Ω的要求，远远高于其他抗静电剂的抗静电效果，尤其是与同类的硫化物抗静电剂XA-21、LS-200相比，具有突出的抗静电效果。而且用量低，加入硅胶粘剂后固化效果好，可以很好地满足硅胶保护膜对抗静电性能的要求，无需对基材膜、离型膜保护层作抗静电处理。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。
Claims (7)
1.一种抗静电的硅胶保护膜，其特征在于，依次包括基材膜、硅胶粘剂层和离型膜保护层；
所述硅胶粘剂层包括下述质量份的原料：有机硅压敏胶100-160份、交联剂0.1-5份、锚固剂0.01-0.5份、催化剂0.1-5份、韩国一信化学AT-200抗静电剂0.01-0.2份、溶剂30-80份。
2.根据权利要求1所述的抗静电的硅胶保护膜，其特征在于，所述有机硅压敏胶的粘度为50-25000cps。
3.根据权利要求1或2所述的抗静电的硅胶保护膜，其特征在于，所述有机硅压敏胶为有机硅聚合物压敏胶、有机硅聚合物改性丙烯酸压敏胶、有机硅改性橡胶型压敏胶中的至少一种。
4.根据权利要求1-3任一项所述的抗静电的硅胶保护膜，其特征在于，所述溶剂为甲苯、二甲苯、乙酸乙酯、丁酮、100-200#溶剂油中的至少一种。
5.根据权利要求1-4任一项所述的抗静电的硅胶保护膜，其特征在于，所述基材膜为BOPP膜、BOPET膜、BOPA膜、PET膜、PE膜、PC膜、TAC膜、PP膜、PS膜、PMMA膜、TPU膜、PI膜、PVB膜、PVC膜中的至少一种。
6.一种如权利要求1-5任一项所述的抗静电的硅胶保护膜的制备方法，其特征在于，包括：依次将有机硅压敏胶、交联剂、锚固剂、催化剂、抗静电剂AT-200加入溶剂中，搅拌均匀，然后涂布在基材膜上，高温固化形成硅胶粘剂层，然后在所述硅胶粘剂层表面贴合离型膜保护层，即得。
7.根据权利要求6所述的抗静电的硅胶保护膜的制备方法，其特征在于，所述高温固化的固化温度为100-200℃，固化时间为1-3min。
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