CN113302720A - Wafer stripping and cleaning device - Google Patents

Wafer stripping and cleaning device Download PDF

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Publication number
CN113302720A
CN113302720A CN202080009605.0A CN202080009605A CN113302720A CN 113302720 A CN113302720 A CN 113302720A CN 202080009605 A CN202080009605 A CN 202080009605A CN 113302720 A CN113302720 A CN 113302720A
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CN
China
Prior art keywords
wafer
peeling
chuck
wafers
cleaning
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Pending
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CN202080009605.0A
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Chinese (zh)
Inventor
宫成代三
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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Publication of CN113302720A publication Critical patent/CN113302720A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H01L21/677
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

The invention shortens the time from the peeling operation to the conveying to the single cleaning part by the transfer device without damaging the wafer, thereby improving the efficiency on the whole. In a wafer peeling and cleaning device, a wafer peeling unit (100) has a 1 st peeling chuck (200) and a 2 nd peeling chuck (201), a stopper plate (214), and two take-out prevention plates (216) having slits (216a) formed in the upper part of the stopper plate (214), and a delivery device (118) has a delivery chuck (300) and a pressure switch, the pressure switch detects suction holding of a wafer (W) by the delivery chuck (300), releases vacuum suction of the 1 st peeling chuck (200) and the 2 nd peeling chuck (201) based on a detection signal of the pressure switch, and starts retraction of the delivery chuck (300) and lowering of the 1 st peeling chuck (200) and the 2 nd peeling chuck (201).

Description

Wafer stripping and cleaning device
Technical Field
The present invention relates to a wafer peeling and cleaning apparatus, and more particularly to a wafer peeling and cleaning apparatus for peeling and cleaning a plurality of wafers cut into a plurality of pieces at the same time by a wire saw and in a batch state (bundled) from a dicing base to be singulated.
Background
When the ingot is cut by the wire saw, the wafer is cut in a state where all of the wafer is bonded to the dicing base. Therefore, the wafer needs to be separated from the dicing base and singulated. Further, since the machining liquid and the like adhere to the wafer immediately after the cutting by the wire saw, it is necessary to remove the machining liquid by cleaning.
Conventionally, the wafer peeling operation and the wafer cleaning operation are performed by one wafer peeling and cleaning apparatus. The wafer peeling and cleaning apparatus includes a preliminary cleaning unit, a wafer peeling blade unit, a cleaning unit, and a recovery unit, and the wafer immediately after cutting is first conveyed to the preliminary cleaning unit to be preliminarily cleaned. Then, the wafers in the batch state after the preliminary cleaning are transferred to a wafer peeling and singulating unit, where the wafers are peeled one by one from the dicing base to be singulated. The wafer peeled from the dicing base is transferred to the single wafer cleaning unit by the transfer device. Then, the individual sheets are washed, and collected one by one in a collection unit and stored in a cassette.
In the wafer separation singling portion, in order to efficiently separate the wafer, a pair of separation suction cups are disposed with a predetermined interval therebetween, and the wafer is vacuum-sucked and held by the pair of separation suction cups. Then, the peeling chuck is swung in the front-rear direction, moved up and down by the lifting rotary actuator, and stopped at a predetermined delivery position, and the above-described technique is well known and described in patent document 1.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 11-288902
Disclosure of Invention
Problems to be solved by the invention
In the technique described in patent document 1, the wafer is vacuum-sucked by the pair of peeling chucks and is moved up and down while swinging in the front-rear direction, and therefore, it is preferable to efficiently peel the wafer, but it is not sufficient to reliably transfer the peeled wafer to the transfer chuck at the transfer position after lifting the wafer. In particular, if the speed of the up-and-down movement is increased in order to improve efficiency, the wafer may fall in the middle or the posture of the wafer may be unstable, which may cause damage.
In addition, there is also a problem that: when the wafer is tilted, the wafer cannot be smoothly sucked by the chuck for peeling.
The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a wafer peeling and cleaning device which can reliably suck wafers by a peeling chuck even if the wafers are inclined, easily peel the wafers one by one with a small force, and reliably convey the peeled wafers to a transfer device or a single wafer cleaning unit, thereby reducing the time and improving the efficiency as a whole.
Means for solving the problems
In order to solve the above problems, the present invention provides a wafer peeling and cleaning apparatus for peeling wafers in a batch state, which are simultaneously cut into a plurality of pieces, one by one in a wafer peeling and cleaning unit from a dicing base to singulate the wafers, conveying the peeled wafers to a singulating cleaning unit, and cleaning the wafers, and then collecting the wafers in a cassette by a collecting unit, wherein the wafer peeling and cleaning unit includes:
a hot water tank formed in a rectangular box shape, in which hot water is stored; a workpiece holding section provided in the hot water tank and holding the wafer; a 1 st peeling chuck having a central axis aligned with a central axis of the wafer in a state where the wafer is held by the work holding portion; a 2 nd separating suction cup which is arranged at a position lower than the 1 st separating suction cup and is telescopic along the axial direction; a 1 st guide rail arranged along a longitudinal direction of the hot water tank; a 1 st feeding motor for moving the 1 st and 2 nd peeling chucks along the 1 st guide rail and along the longitudinal direction of the hot water tank; and a lifting/lowering rotary actuator for lifting/lowering the 1 st and 2 nd peeling chucks vertically upward.
In the foregoing, it is preferable that the 2 nd peeling chuck is a bellows-type vacuum chuck.
Preferably, the first peeling chuck is a flat vacuum chuck having a flat surface, and the suction force of the first peeling chuck is stronger than that of the second peeling chuck.
Preferably, when the wafers in the batch state are separated one by one and singulated, the wafers are sucked and held by the 2 nd peeling chuck contacting and pulling up the end face of the wafer, and then the central axis of the wafer is sucked by the 1 st peeling chuck.
Preferably, the wafer peeling and cleaning device further includes a stopper plate for preventing the wafer from falling forward when the wafers in the batch state are peeled one by one and singulated, and the 2 nd peeling chuck pulls the wafer toward the stopper plate side with a vicinity of an adhesive portion of the wafer in the batch state as a center.
Preferably, a swing rotary actuator is provided for swinging the first and second peeling chucks 1 and 2 in a direction along the axis of the wafer, and the wafer is peeled from the dicing table by swinging the first and second peeling chucks 1 and 2 by driving the swing rotary actuator.
It is preferable that a water supply nozzle is provided vertically above the wafers, and hot water or water is supplied vertically above the wafers from the vicinity of the center when the wafers are peeled one by one.
Preferably, the wafer peeling and cleaning apparatus includes air nozzles provided on both side surfaces of the wafer, and the air nozzles blow supply air to the side surfaces of the wafer when the wafers are peeled one by sucking and holding the end surfaces of the wafers placed in the hot water tank by the 1 st and 2 nd peeling chucks.
Preferably, the air nozzle blows the supply air from a lower side toward an upper side of the wafer.
Preferably, the air nozzle blows the supply air to a plurality of wafers in a batch state when peeling 1 wafer.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, it is possible to obtain a wafer peeling and cleaning device capable of reliably sucking a wafer by a peeling chuck even if the wafer is inclined, shortening the time from the peeling operation to the conveyance to the single wafer cleaning unit by the transfer device, and improving the efficiency as a whole.
Drawings
Fig. 1 is a plan view showing the entire structure of the wafer peeling and cleaning apparatus.
Fig. 2 is a plan view showing a structure of a wafer peeling blade.
Fig. 3 is a plan view showing the structure of the peeling apparatus.
Fig. 4 is a partial sectional plan view showing the structure of the interface device.
FIG. 5 is a front view showing the structure of the peeling apparatus.
FIG. 6 is a side view showing the structure of the peeling apparatus.
Fig. 7 is a front view showing a structure of a wafer peeling blade.
Fig. 8 is a front view showing the structure of the interface device.
Fig. 9 is a side partial sectional view showing the structure of the interface device.
Fig. 10 is an enlarged side view showing a main part of a detailed structure of the peeling suction part.
Fig. 11 is an enlarged front view showing a main part of a detailed structure of the peeling suction unit.
Fig. 12 is an explanatory diagram of the operation of the peeling operation.
Fig. 13 is a side view showing the structure of the single-piece washing section.
Fig. 14 is a plan view showing the structure of the conveyance unit.
Fig. 15 is a plan view showing the structure of the recovery unit.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a plan view showing the structure of a wafer peeling and cleaning apparatus 1 according to the present invention, and fig. 2 is a plan view showing the structure of a wafer peeling and cleaning piece 100. As shown in fig. 1, the wafer peeling and cleaning apparatus 1 according to the present embodiment includes a preliminary cleaning unit 10, a wafer peeling unit 100, a conveying unit 310, a unit cleaning unit 350, a detection unit 400, and a collection unit 500 as main components. The outline of each main part will be described.
The preliminary cleaning section 10 performs spray cleaning on the batch-state wafers W immediately after cutting by the wire saw (wafers W bonded to the dicing base S) to remove slurry adhering during cutting. The preliminary cleaning unit 10 includes a preliminary cleaning device 12 for cleaning the wafer W. The preliminary cleaning device 12 has a cleaning step of immersing and cleaning the mounting plate M at the upper side and the dicing tank at the lower side. During cleaning, water flow is generated in the tank to clean while shaking up and down. When the cleaning is completed, the wafer sent out from the preliminary cleaning portion 10 is directly conveyed by the lifter to the next wafer peeling blade portion 100.
In the wafer separation wafer section 100, the wafers W in the batch state are separated one by one from the dicing base S to be singulated. Then, as shown in fig. 2, the wafer peeling sheet unit 100 is mainly composed of a hot water tank 112, a peeling device 114, and a delivery device 118. The transfer device 118 receives the wafer peeled from the dicing base S by the peeling device 114 and transfers the wafer to the shuttle conveyor 312 of the conveying unit 310.
The conveying unit 310 receives the wafer W separated and singulated by the wafer separation blade unit 100 and conveys the wafer W to the subsequent wafer cleaning unit 350. Then, the wafer W is conveyed to the wafer cleaning unit 350 by the reciprocating conveyor 312 of the conveying unit 310.
The wafer cleaning unit 350 cleans the wafers W separated and singulated in the wafer separation unit 100 one by one. The single-wafer cleaning unit 350 includes a single-wafer brushing unit 352, a single-wafer pre-rinsing unit 354, and a single-wafer rinsing unit 356. The single wafer brush unit 352 brushes the back surface and the front surface of the wafer W being conveyed while spraying the cleaning liquid. After the cleaning, in order to prevent the cleaning liquid from being carried into the next process, compressed air is injected to remove the liquid. Then, the wafer W after the completion of the brushing is conveyed to the single wafer pre-rinsing unit 354 in the next step.
The single wafer pre-rinsing unit 354 brushes the back and front surfaces of the wafer conveyed thereto with a rotary brush while spraying a pre-rinse solution from a pre-rinse solution nozzle. After cleaning, compressed air is injected to remove the liquid. Then, the sheet is conveyed to the sheet rinsing section 356 in the next step.
The single wafer rinsing unit 356 performs brushing with a rotating brush while spraying a rinse solution from a rinse solution nozzle onto the back surface and the front surface of the wafer. After the cleaning, the wafer W from which the liquid has been removed is transferred onto the endless belt conveyor 411 of the detection unit 400 and conveyed to a predetermined receiving position of the detection unit 400.
The inspection unit 400 inspects the wafers W after the cleaning, one by one, for cracks, defects, and adhesive residues, and measures the thickness of each wafer. Then, the wafer W whose detection is completed is delivered to the wafer conveyance robot 508 of the collection unit 500.
The wafer transfer robot 508 is a multi-joint robot, and has a rotatable robot hand 520 at its tip end, and the wafer W is sucked and held by a chuck 522 provided at the tip end of the robot hand 520 and transferred. The recovery unit 500 is configured by two wafer recovery units 502A and 502B for recovering normal wafers, a defective wafer recovery unit 504 for recovering defective wafers, and an adhesive residual wafer recovery unit 506 for recovering adhesive residual wafers, in order to separate adhesive residual wafers from defective wafers (broken wafers, defective wafers, thickness defective wafers, and culls).
Then, the wafer transfer robot 508 receives the wafers W from the inspection unit 400, and stores the wafers W in cassettes of the wafer recovery units 502, 504, and 506, respectively, based on the inspection results.
Next, a detailed structure of the wafer peeling-off piece 100 will be described. Fig. 2 is a plan view showing the structure of the wafer separation blade 100, fig. 3 is a plan view showing the structure of the separation device 114, fig. 4 is a partial sectional plan view showing the structure of the delivery device 118, fig. 5 is a front view showing the structure of the separation device 114, fig. 6 is a side view showing the structure of the separation device 114, fig. 7 is a front view showing the structure of the wafer separation blade 100, fig. 8 is a front view showing the structure of the delivery device 118, and fig. 9 is a partial sectional side view showing the structure of the delivery device 118. The wafer peeling unit 100 is mainly composed of a hot water tank 112, a peeling device 114, and a transfer device 118.
The structure of the hot water tank 112 will be explained. The hot water tank 112 is formed in a rectangular box shape, and stores hot water 120 therein. The wafer W peeled from the dicing base S is placed on a workpiece holding section 122 provided in the hot water tank 112. Then, when the wafer W is placed on the work holding portion 122, the dicing base S bonded to the wafer W is immersed in the hot water 120. In this case, the wafer W is preferably immersed up to 2 to 3cm from the wax-fixed portion of the wafer W without immersing the wafer W in the hot water 120.
The schematic structure of the peeling apparatus 114 will be described mainly with reference to fig. 3. The peeling device 114 is a device that peels the wafers W placed in the hot water tank 112 one by one from the dicing base S. As shown in fig. 2, 5, and 7, a pair of 1 st guide rails 136 and 136 are disposed in the vicinity of the right side portion of the hot water tank 112 along the longitudinal direction of the hot water tank 112. A 1 st slide table (traveling body) 140 is slidably supported on the 1 st guide rails 136, 136 via linear guides 138, 138 (fig. 5).
A nut member 142 (fig. 5) is fixed to a lower surface of the 1 st slide table 140, and the nut member 142 is screwed to a screw shaft 144 disposed between the pair of 1 st guide rails 136, 136. Both ends of the screw shaft 144 are rotatably supported by bearing members 146, and the 1 st feed motor 148 (fig. 6) provided at one end of the 1 st guide rails 136, 136 is connected to one end of the screw shaft 144. When the 1 st feed motor 148 is driven, the lead screw 144 is rotated, and as a result, the 1 st slide table 140 moves along the 1 st guide rails 136, 136.
The 1 st slide table 140 is provided with a peeling unit 150 for peeling the wafer W from the dicing base S. As shown in fig. 3, 5, and 6, the peeling unit 150 is provided with a bearing block 152 on the 1 st slide table 140. A support shaft 156 provided at a base end portion of the swing frame 154 is swingably supported by the bearing block 152.
A swing rotary actuator 160 is provided on the 1 st slide base 140 via a bracket 158, and a drive gear 162 is fixed to an output shaft of the swing rotary actuator 160. A driven gear 164 is engaged with the driving gear 162, and the driven gear 164 is fixed to a distal end portion of the rotating shaft 168. The rotary shaft 168 is rotatably supported by a bearing member 170, and the bearing member 170 is supported by a support plate 172 fixed to the swing rotary actuator 160.
A rotating plate 174 (fig. 5 and 6) formed in a disk shape is coaxially fixed to the driven gear 164, and one end of a link 176 is connected to the rotating plate 174 by a pin 178. The other end of the link 176 is connected to the swing frame 154 by a pin 180.
According to the above configuration, the swing frame 154 is swung about the support shaft 156 provided at the base end thereof by driving the swing rotary actuator 160. That is, when the swing rotary actuator 160 is driven, the rotary plate 174 is rotated reciprocally within a range of 180 °, and the reciprocal rotation is transmitted to the swing frame 154 via the link 176, whereby the swing frame 154 swings.
A bearing unit 182 is provided at the upper end of the swing frame 154, and two rotating shafts 186 and 188 are rotatably supported by the bearing unit 182. Arms 190 and 192 are fixed to distal ends of the rotating shafts 186 and 188, respectively, and distal ends of the arms 190 and 192 are connected to a suction cup support plate 198 via pins 194 and 196. A pair of the 1 st and 2 nd peeling chucks 200 and 201 are disposed at a predetermined interval on the chuck support plate 198, and the 1 st and 2 nd peeling chucks 200 and 201 vacuum-adsorb and hold the wafer W.
A support plate 202 is attached to the rear surface of the swing frame 154, and a rotary actuator 204 for lifting is provided on the support plate 202. A rotating plate 206 formed in a fan shape is fixed to an output shaft of the lifting rotary actuator 204, and one end of a link 208 is connected to the rotating plate 206 by a pin 210. The other end of the link 208 is connected to one arm 190 by a pin 212.
According to the above configuration, the lifting/lowering rotary actuator 204 is driven to vertically lift and lower the 1 st and 2 nd peeling chucks 200 and 201 provided on the chuck support plate 198. That is, when the lifting rotary actuator 204 is driven, the rotary plate 206 is rotated reciprocally in a range of 180 °, the reciprocal rotation is transmitted to the arm 190 via the link 208, and the one arm 190 reciprocates in the vertical direction at an angle. When the arm 190 performs the reciprocating angular motion, the other arm 192 also performs the reciprocating angular motion as a swing lever, and as a result, the 1 st and 2 nd peeling chucks 200 and 201 provided on the chuck support plate 198 are lifted up vertically.
The first and second peeling chucks 200 and 201 for sucking and holding the wafer W are driven to move up and down by the up-and-down rotary actuator 204. Further, since the suction pad support plate 198 provided with the 1 st and 2 nd peeling suction pads 200, 201 is connected to the swing frame 154 via the arms 190, 192, the suction pad support plate 198 swings back and forth by the swing frame 154.
That is, the swing rotary actuator 160 drives the 1 st and 2 nd peeling chucks 200 and 201 to swing in the front-rear direction, and the lifting rotary actuator 204 drives the 1 st and 2 nd peeling chucks 200 and 201 to move up and down. Then, the wafer W is peeled from the dicing base S by the first peeling chuck 200 and the second peeling chuck 201 as follows.
The end face of the wafer W placed in the hot water tank 112 is sucked and held by the first and second peeling chucks 200 and 201. Next, the swing rotary actuator 160 is driven to swing the 1 st and 2 nd peeling chucks 200 and 201 in the front-back direction (the direction along the axis of the wafer). Here, the adhesive bonding the wafer W and the dicing base S is sufficiently softened by being immersed in the hot water 120. Therefore, the wafer W is peeled from the dicing base S by being applied with the multiple oscillations.
When the wafer W is peeled off from the dicing base S, the lifting/lowering rotary actuator 204 is driven, and the 1 st and 2 nd peeling chucks 200 and 201 are moved upward while holding the peeled wafer W. Then, the mobile station stops at a predetermined handover position. The wafer W transferred to the transfer position is transferred to the transfer device 118, then transferred to the shuttle conveyor 312 by the transfer device 118, and conveyed to the next process by the shuttle conveyor 312.
On the other hand, the first and second peeling chucks 200 and 201, which have completed the transfer of the wafer W, are driven by the lifting/lowering rotary actuator 204 to move downward and return to the original peeling position. The wafer W is swung by the 1 st and 2 nd peeling chucks 200 and 201 to peel the end surface from the dicing base S, but some wafers W are peeled from the dicing base S before the swing is given by the 1 st and 2 nd peeling chucks 200 and 201.
In this case, the wafer W may fall forward and may not be recovered. Therefore, a fall-stopping plate 214 for preventing the wafer W from falling forward is disposed in a front position of the wafer W to be peeled. The fall stopping plate 214 is provided on the support plate 202 provided with the lifting/lowering rotary actuator 204, and swings together with the 1 st and 2 nd peeling chucks 200 and 201.
The 1 st and 2 nd peeling chucks 200 and 201 are moved up and down through a passage 214a formed in the stopper plate 214. Further, the two take-out prevention plates 216 are fixed to the upper portion of the fall stopper plate 214, and the wafer W peeled from the dicing base S is transferred to a predetermined transfer position through the slit 216a formed in the two take-out prevention plates 216. The slits 216a are formed to have a width that is just enough for 1 wafer W to pass (for example, a width that is 1.1 to 1.5 times the thickness of the wafer W), and thus, when two wafers are simultaneously peeled, the two wafers can be prevented from being attached to each other and simultaneously transferred to the joining position. Specifically, the width of the slit 216a is set to be 1.1 to 1.5 times the thickness of the wafer W, so that it is possible to prevent two wafers W from being simultaneously transferred and prevent damage to the surface.
Here, the surface of the fall stopper plate 214 is preferably subjected to water repellent processing such as fluororesin processing. This is because, when the wafer W is transferred to the transfer position through the slit 216a, the wafer W may be displaced or dropped off from the 1 st and 2 nd peeling chucks 200 and 201, and the transfer may be difficult because a water film is formed on the surface of the fall stopper plate 214 and the wafer W sticks to the fall stopper plate 214 when the fall stopper plate 214 is not subjected to the water repellent processing. Since the water film is not formed by performing the water-repellent process on the surface of the fall-stopping plate 214, the wafer W can be prevented from sticking to the fall-stopping plate 214.
Further, by making the surface of the fall stopper 214 not a mirror surface but a slightly rough surface in advance, the adhesion of the wafer W to the fall stopper 214 can be suppressed or prevented, and by adopting this processing and the water-repellent processing together, the sticking of the wafer W to the fall stopper 214 can be more reliably prevented.
Thus, even when two wafers are simultaneously peeled from the dicing base and the two wafers are stuck together, the 2 nd wafer stuck to the 1 st wafer cannot fall through the slit 216a when passing through the slit 216a of the two take-out preventing plate 216, and therefore can be always transferred one by one to the transfer position. In this case, the wafer that cannot fall through the slit 216a can be prevented from falling forward by the fall stopper plate 214, and therefore can be reliably collected when the next peeling is performed.
Next, a schematic configuration of the delivery device 118 will be described. The delivery device 118 receives the wafer W peeled from the dicing base S by the 1 st peeling chuck 200 of the peeling device 114 from the 1 st peeling chuck 200 and delivers the wafer W to the shuttle conveyor 312. As shown in fig. 2 and 4, and fig. 7, 8, and 9, the delivery device 118 is provided on the 2 nd slide table 240 of the drive unit 222, and the delivery device 118 moves along the 2 nd guide rails 236 and 236 by driving the 2 nd feed motor 248.
A support column 274 is vertically provided on the 2 nd slide table 240 of the drive unit 222. A support 276 is vertically provided on the top of the support column 274, and a turning rotary actuator 278 is horizontally provided on the support 276. The drive gear 280 is engaged with the output shaft of the rotary actuator 278 for rotation, and a driven gear 282 fixed to a rotation shaft 284 is engaged with the drive gear 280. The rotating shaft 284 is rotatably supported by a bearing unit 286 provided on the top of the support frame 276, and the rotating shaft 284 is rotated within a range of 180 ° by driving the rotating actuator 278 for rotation.
A turret 288 is fixed to a base end portion of the pivot 284, and a rotary shaft 290 is rotatably supported by the turret 288. An output shaft of a direction-switching rotary actuator 292 provided in the turret 288 is fixed to a base end portion of the rotary shaft 290, and the rotary shaft 290 is rotated within a range of 90 ° by driving the direction-switching rotary actuator 292.
A pivot arm 294 formed in an L-shape is fixed to a distal end portion of the rotary shaft 290, and a support plate 296 is fixed to a distal end portion of the pivot arm 294. A suction cup advancing and retreating cylinder 298 is provided in the support plate 296, and a delivery suction cup 300 is provided at the rod tip end of the suction cup advancing and retreating cylinder 298. The wafer W peeled by the 1 st and 2 nd peeling chucks 200 and 201 of the peeling apparatus 114 is transferred to a predetermined transfer position and then transferred to the transfer chuck 300.
In the transfer device 118, the wafer W sucked and held by the transfer chuck 300 is rotated within 180 ° in the vertical plane by driving the rotation actuator 278 for rotation, and the direction of the wafer W is changed from the vertical state to the horizontal state by driving the direction changing rotation actuator 292.
The reception of the wafer W peeled by the peeling apparatus 114 and the transfer of the received wafer W to the shuttle conveyor 312 are performed as follows. The wafer W peeled from the dicing base S is lifted up and transferred to a predetermined transfer position while being held by the first peeling chuck 200 and the second peeling chuck 201. The transfer chuck 300 is already in standby at the transfer position, and the wafer W is positioned coaxially with the axis of the transfer chuck 300.
When the wafer W is transferred to the transfer position, the chuck advancing/retreating cylinder 298 is driven, and the transfer chuck 300 is advanced toward the wafer W by a predetermined amount. As a result, the transfer chuck 300 is in close contact with the end surface of the wafer W. Next, the transfer chuck 300 is driven, and the wafer W is sucked and held by the transfer chuck 300. The wafer W sucked and held by the transfer chuck 300 is detected by a pressure switch (not shown) provided on the transfer chuck 300 side.
Here, the pressure switch may be provided at any position where the suction of the wafer W is not hindered as long as the pressure inside the transfer chuck 300 can be detected. For example, although a pressure switch may be provided in an air suction tube (not shown) disposed in the swing arm 294 for operating the transfer suction cup 300, the location of the pressure switch is not limited to the inside of the swing arm 294 as long as it is a location where the pressure in the air suction tube can be detected, and may be provided at any location between portions where the air suction tube extends from the swing arm 294 to the outside and is connected to an air suction pump (not shown). Alternatively, a pressure switch may be provided inside the portion to which the swing arm 294 of the delivery suction cup 300 is connected, so that the pressure inside the delivery suction cup 300 can be directly detected.
Then, the vacuum suction of the 1 st peeling chuck 200 is released, that is, air is flowed in, based on the detection signal. Thereby, the wafer W is transferred from the 1 st separating chuck 200 to the transfer chuck 300. The release of the vacuum suction by the 2 nd peeling chuck 201 may be performed simultaneously with the release of the 1 st peeling chuck 200. However, the wafer W may be released before it is raised or before it is transferred to the transfer position, and in this case, the posture of the wafer W is stabilized.
The transfer chuck 300 having received the wafer W starts driving of the chuck advancing/retreating cylinder 298 in response to a detection signal of the pressure switch, and retreats from the 1 st peeling chuck 200. Similarly, the 1 st peeling chuck 200 having received the wafer W starts to descend in response to the detection signal of the pressure switch, and returns to the original peeling position. When the transfer suction cup 300 is retracted, the turning rotary actuator 278 is driven, and the turning arm 294 is turned 180 °. As a result, the wafer W is transferred to a position above the reciprocating conveyor 312. In addition, a sensor or a device having the same function, such as a touch sensor, may be used instead of the pressure switch.
Since the wafer W transferred to the upper side of the shuttle conveyor 312 is in a state of being perpendicular to the shuttle conveyor 312, the direction switching rotary actuator 292 is driven after the transfer, and the swing arm 294 is rotated by 90 ° around the rotary shaft 290. As a result, the wafer W is positioned at a predetermined height from the shuttle conveyor 312 in a horizontal state.
After the direction switching rotary actuator 292 is driven, the suction cup advancing and retreating cylinder 298 is driven, and the transfer suction cup 300 advances by a predetermined amount toward the reciprocating conveyor 312. As a result, the wafer W is placed on the shuttle conveyor 312. When the wafer W is placed on the shuttle conveyor 312, the driving of the transfer chuck 300 is stopped. Then, the suction cup advancing/retreating cylinder 298 is driven, and the transfer suction cup 300 is retreated from the shuttle conveyor 312.
After the transfer operation of the wafer W is completed, the transfer chuck 300 returns to the original transfer position in the reverse operation to that described above. On the other hand, the shuttle conveyor 312, which has delivered the wafer W, is driven by a driving means, not shown, and conveys the delivered wafer W to the next step. The driving of the wafer separation wafer 100 is automatically controlled by a control device, not shown, and each component device operates based on a driving signal output from the control device.
Next, a method of peeling the wafer by peeling the wafer off the wafer piece 100 will be described in detail. In a state before the start, the 1 st slide table 140 provided with the peeling unit 150 is positioned at one end (lower end in fig. 2) of the 1 st guide rail 136 (this position is referred to as a peeling work start position). On the other hand, the 2 nd slide table 240 provided with the delivery device 118 is positioned at the other end (upper end in fig. 2) of the 2 nd guide rail 236.
The wafer W subjected to multiple cutting by the wire saw is placed in a workpiece holding section 122 provided in the hot water tank 112. Thereby, the dicing base S to which the wafer W is bonded is immersed in the hot water 120 stored in the hot water tank 112. The wafer W may be placed manually by an operator, or may be automatically transferred to the workpiece holding portion 122 by a robot not shown and placed automatically.
When the wafer W is placed in the hot water tank 112, the controller first drives the 2 nd feed motor 248 to move the 2 nd slide table 240 toward the lower side in fig. 2. Next, the 2 nd slide base 240 is positioned at the start position of a predetermined delivery operation. When the 2 nd slide table 240 is located at the start position of the delivery operation, the peeling operation of the wafer W is started.
Next, the control device drives the 1 st feed motor 148 and the 2 nd feed motor 248 in synchronization, and advances the 1 st slide table 140 and the 2 nd slide table 240 (upward in fig. 2). The chuck support plate 198 of the peeling apparatus 114 provided on the 1 st slide table 140 is provided with a non-contact position sensor 214S, and the position sensor 214S operates when the distance from the end surface of the wafer W reaches a predetermined distance.
The control device stops driving of the 1 st feed motor 148 and the 2 nd feed motor 248 and stops the 1 st slide table 140 and the 2 nd slide table 240 by the operation signal from the position sensor 214S. As a result, the 1 st and 2 nd peeling chucks 200 and 201 of the peeling apparatus 114 provided on the 1 st slide table 140 come into contact with the end surface of the wafer W. The controller drives the 1 st and 2 nd separation chucks 200 and 201 that are in contact with the end surfaces of the wafer W, and causes the 1 st and 2 nd separation chucks 200 and 201 to hold the wafer W by suction.
Fig. 10 is an enlarged side view showing a main part of a detailed structure of the peeling suction part, and fig. 11 is an enlarged front view. In the fall stopper 214, the end face side of the wafer W is a reference surface, and a resin-made abutment plate 214-1 which serves as a protective surface is formed, and the side opposite to the end face side of the wafer W is a stainless steel plate 214-2 which is made of stainless steel and is used for ensuring flatness of the abutment plate 214-1. Here, the surface of the resin backup plate 214-1, which is the surface on the side where the wafer W contacts, is preferably subjected to water repellent processing such as fluororesin processing as described above, and more preferably subjected to water repellent processing such that the surface is not a mirror surface but has a surface roughness to such an extent that the wafer W does not adhere thereto. The 1 st peeling chuck 200 is disposed such that the center axis thereof coincides with the center axis of the wafer W, and the 2 nd peeling chuck 201 is disposed below the 1 st peeling chuck 200. The first peeling chuck 200 is a flat vacuum chuck suitable for conveying a workpiece having a flat surface, and has a stronger suction force than the second peeling chuck 201. The 2 nd separating chuck 201 is a bellows-shaped vacuum chuck having a serpentine shape and expanding and contracting in the axial direction.
The wafer W is bonded to the dicing base S with an adhesive agent, is disposed above the mounting plate M, and is then placed on the workpiece holding portion 122 of the hot water tank 112. Here, the adhesive bonding the wafer W and the dicing base S is sufficiently softened by being immersed in the hot water 120. An air supply mechanism is provided on the side of the dicing base S, and air nozzles 80 and 81 are provided on both lower side surfaces of the wafer W. The air nozzles 80 and 81 are configured to blow the supply air from the lower side toward the upper side in both directions from the side surface of the wafer W, that is, to strongly blow the air. A water supply nozzle (not shown) is provided vertically above the wafer W and near the center of the wafer.
The suction holding of the wafer W by the 1 st and 2 nd peeling chucks 200 and 201 is performed as follows. First, the 2 nd peeling chuck 201 is brought into contact with the end surface of the wafer W. The 2 nd peeling chuck 201 is disposed below the center axis of the wafer W and is capable of expanding and contracting in the axial direction, for example, like a bellows-type vacuum chuck, and therefore, the 2 nd peeling chuck of the type in which the suction portion of the chuck can be inclined to some extent in conformity with the surface of the object to be sucked even if the surface of the object to be sucked is inclined to some extent with respect to the surface perpendicular to the axial direction can be used.
As a result, as shown in fig. 12, even if the wafer W is inclined, the suction portion of the 2 nd peeling chuck 200 can reliably suck the wafer W following the inclination of the wafer W, and the root portion of the wafer W can be pulled toward the side of the fall stopper 214 with the vicinity of the bonding portion of the wafer W as the center. This reliably and efficiently starts the peeling operation.
Fig. 12 is an explanatory view of the operation of the peeling operation, and when peeling 1 wafer W, the supply air is blown from the air nozzles 80 and 81 from the lower side toward the upper side on both side surfaces of the wafer W as indicated by arrows F, G with respect to the plurality of wafers W.
Specifically, the supply air is blown at least between the 1 st and 2 nd wafers W with respect to the leftmost wafer W peeled off in fig. 12. Further, it is preferable to blow out the supply air between the 2 nd and 3 rd sheets and between the 3 rd and 4 th sheets for peeling the wafer efficiently. However, during the peeling operation of the plurality of wafers, the adhesive bonding the wafer W and the dicing base S is sufficiently softened by being immersed in the hot water 120, and therefore, the number of sheets to be blown can be reduced while the peeling operation is being performed.
On the other hand, by supplying hot water or water from the vicinity of the center as indicated by an arrow H vertically above the wafer W and supplying water from the center, a constant gap can be secured at the center. Further, by flowing air from both side surfaces of the wafer W, a gap between both sides can be maintained in a balanced manner, and the wafers can be spaced apart neatly.
That is, the air is supplied to remove the water film, thereby preventing the wafers W from being stuck together by the surface tension of the water, and thus separating the wafers W from each other, and preventing the next wafer from being continuously lifted up when lifting up 1 wafer W. Further, by blowing the supply air against the plurality of wafers, particularly between the 1 st and 2 nd wafers and between the 2 nd and 3 rd wafers, it is possible to prevent the standby wafer W (the 2 nd wafer) next to the lifted wafer W from coming into close contact with the standby wafer W (the 3 rd wafer) next thereto. This can improve the efficiency in sequentially continuing the peeling operation.
After the wafer W is pulled toward the stopper plate 214 by the 2 nd peeling chuck 201, the center axis of the wafer W is firmly sucked by the 1 st peeling chuck 200 which is a flat vacuum chuck having a flat surface. Therefore, the wafer W can be processed in a short time in a state suitable for the conveyance of the wafer W, and the possibility of dropping in the middle can be eliminated.
Next, the controller drives the swing rotary actuator 160 to swing the swing frame 154 back and forth, and swings the first and second peeling chucks 200 and 201 back and forth (in the direction along the axis of the wafer). The first and second peeling chucks 200 and 201 swing about the vicinity of the bonding portion between the wafer W and the dicing base S as a swing center. Therefore, the wafer W is simply peeled from the dicing base S by applying a plurality of swings to the 1 st and 2 nd peeling chucks 200 and 201. Further, the wafer W is peeled from the root by the forward and backward swinging at the time of peeling, and the peeling can be efficiently performed as a whole.
The control device stops the driving of the swing rotary actuator 160 when swinging the 1 st and 2 nd peeling chucks 200 and 201 a predetermined number of times. Next, the lifting/lowering rotary actuator 204 is driven to rotate the arms 190 and 192 upward, and the 1 st and 2 nd peeling chucks 200 and 201 are moved upward. At this time, the center axis of the wafer W is firmly fixed by the 1 st peeling chuck 200.
The wafer W sucked and held by the first peeling chuck 200 is guided by a resin (e.g., a fluororesin) abutment plate 214-1 having good slidability, and passes through a slit 216a (fig. 3) for taking out the two prevention plates 216 fixed to the upper portion of the fall-stopping plate 214. This prevents two wafers W from being taken out.
That is, even when a wafer W to be peeled next is stuck to a wafer W held by suction by the first peeling chuck 200, the stuck wafers W are peeled off when passing through the slit 216a while passing through the slit 216a, and therefore, only one wafer W can be taken out while being sucked by the first peeling chuck 200.
Further, the wafer that cannot fall through the slit 216a is prevented from falling forward by the fall stopper plate 214, and therefore can be reliably collected at the next peeling. At this time, the end face side of the wafer W abuts against the abutment plate 214-1 made of resin (e.g., fluororesin) having very high surface lubricity, and therefore damage can be prevented.
The 1 st and 2 nd peeling chucks 200 and 201 moved upward are stopped at the positions indicated by the chain lines in fig. 8 as delivery positions. At the transfer position, the transfer chuck 300 of the transfer device 118 stands by, and the wafer W held by suction by the 1 st peeling chuck 200 whose end face firmly sucks the center axis of the wafer W is positioned coaxially with the axis of the transfer chuck 300.
The transfer position is a position where the transfer chuck 300 is substantially horizontal (the position where the swing arm 294 is horizontal in fig. 8), and the wafer W is not easily affected by the wafer deflection due to gravity because the wafer W is kept in a vertical state. After the transfer, the chucks 200 and 201 can quickly return to the peeling operation for the next wafer W, and the efficient peeling operation can be sequentially continued.
When the 1 st and 2 nd peeling chucks 200 and 201 stop at the predetermined transfer position, the controller drives the chuck advancing/retreating cylinder 298 to advance the transfer chuck 300 toward the wafer W by a predetermined amount. As a result, the transfer chuck 300 is brought into close contact with the back surface of the wafer W sucked by the 1 st peeling chuck 200. Then, the back surface of the wafer W is also sucked and held by the transfer chuck 300 together with the end surface on the 1 st peeling chuck 200 side.
The wafer W sucked and held by the transfer chuck 300 is detected by a pressure switch (not shown) provided on the transfer chuck 300 side. Then, the vacuum suction by the 1 st and 2 nd peeling chucks 200 and 201 is released, that is, air is flowed in, based on the detection signal. The transfer chuck 300 is a flat vacuum chuck having a flat surface, and firmly sucks the central axis of the wafer W, as in the case of the 1 st peeling chuck 200. Thus, the wafer W is transferred from the 1 st peeling chuck 200 to the transfer chuck 300, and the central axis of the wafer W is firmly attracted by the transfer chuck 300. Therefore, the processing can be performed in a state suitable for the conveyance of the wafer W, and the possibility of dropping in the middle or the like can be eliminated.
Next, the controller drives the suction cup advancing and retreating cylinder 298 to advance and retreat the delivery suction cup 300 from the 1 st peeling suction cup 200. At the same time as the transfer chuck 300 is retracted, the control device drives the lifting/lowering rotary actuator 204 to rotate the arms 190 and 192 downward, and moves the 1 st and 2 nd peeling chucks 200 and 201 downward to return to the original peeling work position.
On the other hand, after the chuck advancing and retreating cylinder 298 is driven, the controller drives the rotary actuator 278 for swiveling, and swivels the swivel arm 294 by 180 ° to transfer the wafer W to the position above the reciprocating conveyor 312. After the transfer, the direction-switching rotary actuator 292 is driven. The swing arm 294 rotates by 90 ° about the rotation shaft 290.
Thereby, both end surfaces of the wafer W are parallel to the shuttle conveyor 312. The controller drives the suction cup advancing/retreating cylinder 298 to advance the delivery suction cup 300 toward the reciprocating conveyor 312. As a result, the wafer W is placed on the shuttle conveyor 312. Next, the controller stops the driving of the delivery chuck 300 and delivers the wafer W to the shuttle conveyor 312.
After stopping the driving of the transfer chuck 300, the controller drives the chuck advancing and retreating cylinder 298 to retreat the transfer chuck 300 from the reciprocating conveyor 312 and drives the reciprocating conveyor 312 to convey the wafer W to the next process. After the suction-cup advancing/retreating cylinder 298 is driven, the controller drives the direction-switching rotary actuator 292 and the turning rotary actuator 278 to return the transfer suction cup 300 to the original transfer position.
Before the transfer chuck 300 returns to the transfer position, the chucks 200 and 201 perform the peeling operation of the next wafer W, and thus the peeling operation of the 2 nd wafer W is completed. Therefore, the time required for the peeling operation can be reduced, and the peeling operation can be sequentially performed efficiently.
That is, the transfer of the 1 st wafer W is completed in a series of steps, and the transfer chuck 300 is moved backward and the chucks 200 and 201 are returned to the original peeling positions. Then, the control device synchronously drives the 1 st feed motor 148 and the 2 nd feed motor 248 to advance the 1 st slide table 140 and the 2 nd slide table 240 by a predetermined amount. Thereby, the 1 st and 2 nd separating chucks 200 and 201 come into contact with the end surface of the 2 nd separated wafer W. The controller peels off the 2 nd wafer W in the same manner as described above.
As described above, the wafers W bonded to the dicing base S are sequentially peeled off and conveyed to the next step, and the peeling operation of one cycle is completed. Next, the transfer unit 310 receives the wafer W peeled and singulated by the wafer peeling blade unit 100 and transfers the wafer W to the next wafer cleaning unit 350. Then, the transfer unit 310 is provided with a reciprocating conveyor 312, and the wafer W is transferred to the wafer cleaning unit 350 by the reciprocating conveyor 312.
The wafer cleaning unit 350 cleans the wafers W separated and singulated by the wafer separation wafer unit 100 one by one. The single-wafer cleaning unit 350 includes a single-wafer brushing unit 352, a single-wafer pre-rinsing unit 354, and a single-wafer rinsing unit 356.
Fig. 13 is a side view showing the structure of the wafer cleaning unit 350, and the wafer cleaning unit 352 has a cleaning tank (not shown) having a chamber structure, and as shown in fig. 13, a pair of rotating brushes 378, a pair of cleaning liquid nozzles 380, 380 through which a cleaning liquid flows, two pairs of wafer-conveying roller conveyors 382, and 384, and a pair of blower nozzles 384, 384 for removing the cleaning liquid are arranged in the cleaning tank.
The wafer brush unit 352 brushes the wafer W with the rotary brushes 378, 378 while spraying the cleaning liquid from the cleaning liquid nozzles 380, 380 onto the back surface and the front surface of the wafer W conveyed by the reciprocating conveyor 312 of the conveying unit 310. After the cleaning, in order to prevent the cleaning liquid from being carried into the next step, compressed air is ejected from the blower nozzles 384, 384 to remove the cleaning liquid. Then, the wafer W having been brushed is conveyed by the roller conveyor 382 to the single wafer pre-rinsing unit 354 in the next step.
The single-piece pre-rinsing unit 354 has the same configuration as the single-piece brushing unit 352. In the single wafer pre-rinsing unit 354, the wafer is brushed by the rotating brush while spraying the pre-rinse solution from the pre-rinse solution nozzle onto the back surface and the front surface of the wafer conveyed by the roller conveyor 382 of the single wafer brushing unit 352. After cleaning, compressed air is injected to remove the liquid. Then, the wafer W having finished the brushing is conveyed by the roller conveyor to the single rinsing unit 356 in the next step.
The single rinsing section 356 has substantially the same structure as the single brushing section 352. In the single wafer rinsing section 356, the wafer is brushed by a rotating brush while spraying a rinse solution from a rinse solution nozzle onto the back surface and the front surface of the wafer conveyed by the roller conveyor of the single wafer rinsing and cleaning section. After the cleaning, the wafer W is conveyed by the roller conveyor to the next detection section 400.
The inspection unit 400 inspects the wafers W after cleaning for cracks, defects, and adhesive residues one by one, and measures the thickness one by one. The detection unit 400 includes the following elements: a transfer unit 402 for transferring the wafer W, the cleaning of which has been completed in the single wafer cleaning unit 350, to a predetermined receiving position; a rotation driving unit for lifting the wafer W conveyed to the receiving position to a predetermined detection position and rotating the wafer W; a thickness measuring unit that measures the thickness of the wafer W rotated by the rotation driving unit; a defective wafer detection unit for detecting a crack, a defect, and an adhesive residue of the wafer W rotated by the rotation drive unit; and a delivery unit for delivering the wafer W whose detection is completed to the wafer conveyance robot of the next collection unit 500.
Fig. 14 is a plan view showing the structure of the conveying unit 402, and the conveying unit 402 has an endless belt conveyor 411. The endless belt conveyor 411 is provided continuously with the terminal end portion of the single piece cleaning portion 350. A pair of guide members 411a, 411a are disposed on both sides of the endless belt conveyor 411, and the wafer W is guided by the guide members 411a, 411a so as to be advanced straight.
As shown in fig. 14, at the end position of the endless belt conveyor 411, 5 positioning pins 412, · · are arranged so as to form an arc, and the wafer W conveyed by the endless belt conveyor 411 is positioned at a predetermined receiving position by abutting the positioning pins 412, · · · on the wafer W. When the wafer W abuts on the positioning pins 412, a sensor, not shown, operates, and the driving of the endless belt conveyor 411 is stopped by the operation of the sensor. Then, the detected wafer W is delivered to the wafer transfer robot 508 of the collection unit 500.
Fig. 15 is a plan view showing the structure of the recovery unit 500, and the wafer recovery units 502A and 502B each have a cassette holder (not shown) of two-layer type. The cassette holder is supported by a cassette positioning mechanism, not shown, so as to be movable up and down, and wafer recovery cassettes 510A and 510B for recovering wafers W are placed on the cassette holder two by two.
The defective wafer collecting unit 504 and the residual adhesive wafer collecting unit 506 also have not-shown cassette holders, respectively, which are supported by not-shown cassette positioning mechanisms so as to be movable up and down, similarly to the wafer collecting units 502A and 502B. Then, a defective wafer recovery box 512 for recovering the defective wafer W and a residual adhesive wafer recovery box 514 for recovering the residual adhesive wafer W are placed on the box holder.
When 1 wafer W is stored, a cassette positioning mechanism, not shown, is driven to raise the wafer collection cassette 510A by an amount corresponding to one layer. The wafer peeling and cleaning apparatus 1 of the present embodiment is configured as described above. All the devices constituting the wafer peeling and cleaning apparatus 1 are controlled and driven by a control device, not shown, and are operated based on a drive signal output from the control device.
The wafer peeling and cleaning apparatus 1 described above may peel and clean a sliced wafer cut by a normal cutting method (a method of cutting only one ingot at a time). The wafers W cut by the wire saw in the batch state are conveyed to the wafer peeling and cleaning apparatus 1 by a conveying apparatus not shown.
Then, the wafer peeling and cleaning apparatus 1 is mounted on a lift, not shown, included in the apparatus. The wafer W mounted on the lifter is first conveyed to the preliminary cleaning unit 10 by the lifter. Then, spray cleaning was performed to remove the slurry adhering during cutting. The preliminary cleaning section 10 is carried on the lifter for shower cleaning, and when the shower cleaning is completed, the wafer is transferred to the wafer separation blade section 100.
The wafer W conveyed to the wafer separation blade 100 is first turned upside down by a reversing mechanism provided in the lifter (after the wafer W is disposed above the mounting plate M), and then placed on the workpiece holding portion 122 of the hot water tank 112. The wafers W placed on the workpiece holding portion 122 are peeled off one by one from the dicing base S by the 1 st and 2 nd peeling chucks 200 and 201, and the peeled wafers W are sequentially transferred to the reciprocating conveyor 312 of the transfer portion 310. Then, the sheet is conveyed to the sheet washing section 350 by the reciprocating conveyor 312.
The above-described operation is performed for the wafers W peeled off from the dicing base S one by one, and the operation is ended when all the wafers W are stored in the cassette. After the completion, the respective devices return to the state before the activation.
The wafer peeling and cleaning apparatus 1 can peel and clean a sliced wafer cut by a multiple cutting method (a method of simultaneously cutting ingots of different types from one cutting). The case of peeling and cleaning the wafer cut by the multiple cutting method will be described.
The wafers cut by the multiple cutting method need to be collected for each type of wafer, and are thus processed as follows. The steps before the wafer is transferred to the wafer separation blade 100 are the same as those of the wafer cut by the normal cutting method described above.
When the multiple-cut wafers W are placed in the work holding portion 122 of the wafer separation blade 100, a partition plate (not shown) of a partition device is placed between the lots of the wafers W. Then, when the partition plate is placed, the peeling operation by the 1 st peeling chuck 200 is started. The peeling operation is first performed from the 1 st lot of wafers W, and the peeled wafers W are sequentially transferred onto the shuttle conveyor 312 of the transfer unit 310.
When all the peeling of the wafers W of the 1 st lot is completed, the 1 st partition plate (not shown) inserted between the 1 st lot and the 2 nd lot is detected. When the 1 st partition plate is detected, the control device determines that the wafer to be peeled later is the wafer W of the 2 nd lot. Thus, wafers can be divided for each lot, and wafers can be collected without mixing wafers of different types.
When all the wafers W of the 2 nd lot are peeled off, the 2 nd separation plate (not shown) inserted between the 2 nd lot and the 3 rd lot is detected, and the control device detects the 2 nd separation plate. The wafer to be peeled later is determined to be the wafer W of the 3 rd lot.
As described above, in the wafer separation blade 100, since the supply air is blown out by the air nozzle when the end surfaces of the wafers are sucked and held by the separation chuck and separated one by one, the gap between the wafers in the batch state can be secured with good balance, the damage to the wafers can be eliminated, and only one wafer can be efficiently lifted. Then, the processes of the conveying section 310, the wafer cleaning section 350, the detecting section 400, and the collecting section 500 can be smoothly performed, and the wafer peeling and cleaning apparatus 1 with high efficiency can be provided.
[ appendix A ] the present invention includes the following.
(appendix A item 1)
A wafer stripping and cleaning device is characterized in that,
the wafer peeling and cleaning device peels a plurality of wafers in batch state cut into pieces at the same time from a dicing base one by one in a wafer peeling and singulating unit to singulate the wafers, conveys the peeled wafers to a singulating cleaning unit to singulate and clean the wafers, and then collects the wafers in a cassette by a collecting unit after cleaning,
in the wafer stripping and cleaning apparatus, the wafer is stripped and cleaned,
the wafer lift-off singulating section includes:
a hot water tank formed in a rectangular box shape, in which hot water is stored;
a workpiece holding unit provided in the hot water tank and holding the wafer to be peeled;
a separation chuck for sucking and holding an end surface of one side of the wafer;
a 1 st guide rail arranged along a longitudinal direction of the hot water tank;
a 1 st feed motor for moving the peeling suction cup along the 1 st guide rail and along the longitudinal direction of the hot water tank;
a lifting/lowering rotary actuator for lifting/lowering the separation suction pad vertically upward; and
an air nozzle provided on a side surface of the wafer,
and blowing supply air to the side surface of the wafer by the air nozzle when the wafer is peeled one by holding the end surface of the wafer placed in the hot water tank by suction by the peeling chuck.
(appendix A item 2)
The wafer peeling and cleaning apparatus according to supplementary note a 1, wherein the air nozzles are provided on both side surfaces of the wafer.
(appendix A item 3)
The wafer peeling and cleaning apparatus according to item 1 or 2 of the attached note a, wherein the air nozzle is provided on a lower side of the wafer.
(appendix A item 4)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 3, wherein the air nozzle blows supply air from a lower side toward an upper side of the wafer.
(appendix A item 5)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 4, wherein the air nozzle blows supply air against a plurality of wafers in a batch state when peeling 1 wafer.
(appendix A item 6)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 5, wherein the air nozzle blows supply air at least between the 1 st and 2 nd wafers when peeling the 1 st wafer.
(appendix A item 7)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 6, wherein the air nozzle blows supply air between the 1 st and 2 nd wafers and between the 2 nd and 3 rd wafers when peeling the 1 st wafer.
(attached note A item 8)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 7, wherein a water supply nozzle is provided vertically above the wafer, and hot water or water is supplied vertically above the wafer from the vicinity of the center when the wafers are peeled one by one.
(appendix A item 9)
The wafer peeling and cleaning apparatus according to any one of supplementary notes a 1 to 8, wherein a swing rotary actuator for swinging the peeling chuck in a direction along an axis of the wafer is provided, and the wafer is peeled from the dicing base by swinging the peeling chuck by driving the swing rotary actuator.
(appendix A item 10)
The wafer peeling and cleaning apparatus according to supplementary note a 9, wherein a center of the swing is set in a vicinity of a bonding portion between the dicing base and the wafer.
According to the wafer peeling and cleaning apparatus of the present invention, the following problems of the invention described in patent document 1 can be solved.
In the invention described in patent document 1, it is preferable to peel the wafer efficiently because the wafer is oscillated in the direction along the axis, but when the wafer is lifted by the wafer peeling part, the next wafer is lifted up in a lump.
The next standby wafer of the lifted wafer may come into close contact with the next 2 nd standby wafer, which may cause damage such as cracking, chipping, and small cracks to the wafer.
According to the wafer peeling and cleaning apparatus of the present invention, since the air nozzle is provided on the side surface of the wafer and the air nozzle blows the supply air when the end surfaces of the wafers are sucked and held by the peeling chuck and peeled one by one, the gap between the wafers in the batch state can be secured with good balance. Therefore, the next wafer is not pulled up in a batch at the time of pulling up the wafer, and damage to the wafer can be eliminated, and only 1 wafer can be pulled up efficiently.
[ appendix B ] the present invention also includes the following.
(appendix B item 1)
A wafer stripping and cleaning device is characterized in that,
the wafer peeling and cleaning device peels off wafers in batch state, which are cut into a plurality of pieces at the same time, from a dicing base one by one in a wafer peeling and singulating section, delivers the peeled wafers to a delivery device at a delivery position, conveys the wafers to a singulating cleaning section by the delivery device, singulates the wafers, cleans the wafers, and collects the wafers in a cassette by a collection section after cleaning,
the wafer peeling and cleaning device comprises:
a wafer separation wafer unit having a separation chuck for sucking and holding an end face of the wafer, a lifting/lowering rotary actuator for lifting/lowering the separation chuck vertically upward, a fall-stopping plate provided on a support plate provided with the lifting/lowering rotary actuator, and two take-out preventing plates fixed to the fall-stopping plate and having a slit formed in an upper portion of the fall-stopping plate;
the transfer device includes a transfer chuck for receiving the wafer peeled by the wafer peeling piece from the peeling chuck, and a pressure switch for detecting that the wafer is sucked and held by the transfer chuck; and
and a control device which releases the vacuum suction of the peeling chuck based on a detection signal of the pressure switch, and starts the delivery chuck to retreat from the peeling chuck and starts the descent of the peeling chuck.
(appendix B item 2)
The wafer peeling and cleaning apparatus according to supplementary note B1, wherein the fall stopper is provided with a resin abutment plate on the end face side of the wafer.
(appendix B item 3)
The wafer peeling and cleaning apparatus according to supplementary note B2, wherein a stainless steel plate made of stainless steel is provided on a side opposite to the abutting plate.
(attached note B item 4)
The wafer peeling and cleaning apparatus according to any one of supplementary notes B1 to B3, wherein the wafer sucked and held by the peeling chuck is guided by the abutting plate and stopped at the transfer position through the slit.
(appendix B item 5)
The wafer peeling and cleaning apparatus according to any one of supplementary notes B1 to 4, wherein the delivery suction cup and the peeling suction cup are flat vacuum suction cups.
(appendix B item 6)
The wafer peeling and cleaning apparatus according to any one of supplementary notes B1 to 5, wherein the width of the slit is 1.1 to 1.5 times the thickness of the wafer.
(appendix B item 7)
The wafer peeling and cleaning apparatus according to any one of supplementary notes B1 to B6, characterized in that the apparatus comprises a swing arm having the transfer chuck at a distal end portion thereof, and the transfer position is a position where the swing arm is horizontal.
(attached note B item 8)
The wafer peeling and cleaning apparatus according to any one of supplementary notes B1 to 7, wherein the wafer is positioned coaxially with an axis of the transfer chuck at the transfer position.
The wafer peeling and cleaning apparatus according to the present invention can solve the following problems of the invention described in patent document 1.
That is, in the technique described in patent document 1, if the wafer is sucked by the peeling chuck and the speed of moving the peeling chuck upward is increased, the surface of the wafer may be damaged. Further, since the delivering suction pad is moved back from the peeling suction pad position at the delivering position and then the peeling suction pad is moved back to the original peeling work position, the timing for starting the peeling work is delayed, and time is wasted in sequentially performing the peeling work. Further, since the timing of transferring the wafer to the transfer chuck is not clear, if the timing of moving the peeling chuck downward is too early, the surface of the wafer may be damaged, or damage such as cracking, chipping, or small cracks may be caused.
According to the present invention, it is possible to obtain a wafer peeling and cleaning apparatus that can shorten the time from the peeling operation to the transfer to the individual cleaning section by the transfer device without damaging the wafer, and improve the efficiency as a whole.
Description of the reference numerals
1. A wafer stripping and cleaning device; 10. a preliminary cleaning section; 12. a preliminary cleaning device; 100. peeling off the single piece part from the wafer; 310. a conveying section; 350. a single-chip cleaning section; 400. a detection unit; 500. a recovery unit; 112. a hot water tank; 114. a peeling device; 118. a handover device; 120. hot water; 122. a workpiece holding section; 312. a reciprocating conveyor; 352. a single-chip brush washing section; 354. a single-chip pre-rinsing part; 356. a single-chip rinsing part; 402. a conveying unit; 508. a wafer conveying mechanical arm; 136. 1, a first guide rail; 138. a linear guide; 140. 1 st sliding table; 142. a nut member; 144. a lead screw; 148. 1 st feed motor; 150. a peeling unit; 152. a bearing block; 154. a swing frame; 160. a swing rotary actuator; 162. a drive gear; 164. a driven gear; 168. a rotating shaft; 170. a bearing member; 172. a support plate; 174. a rotating plate; 176. a connecting rod; 178. 180, 194, 196, 210, 212, pins; 182. a bearing unit; 186. 188, a rotating shaft; 190. 192, an arm; 198. a suction cup supporting plate; 200. the 1 st stripping suction cup; 201. the 2 nd stripping suction cup; 202. a support plate; 204. a rotary actuator for lifting; 206. a rotating plate; 208. a connecting rod; 214. a fall-stopping plate; 214a, vias; 214S, position sensor; 214-1, a rest plate; 214-2, stainless steel plate; 80. 81, an air nozzle; 216. taking out two prevention plates; 216a, a slit; 222. a drive unit; 240. a 2 nd slide table; 248. a 2 nd feed motor; 236. a 2 nd guide rail; 274. a pillar; 276. a support frame; 278. a rotary actuator for swiveling; 280. a drive gear; 284. a rotating shaft; 282. a driven gear; 286. a bearing unit; 288. a revolving frame; 290. a rotating shaft; 292. a direction-switching rotary actuator; 294. a swivel arm; 296. a support plate; 298. a suction cup advancing and retreating cylinder; 300. a sucking disc for handover; 378. rotating the brush; 380. a cleaning solution nozzle; 382. a roller conveyor; 384. a blower nozzle; 402. a conveying unit; 411. an endless belt conveyor; 411a, a guide member; 412. positioning pins; 502. 502A, 502B, a wafer recovery unit; 510A, 510B, a wafer recovery box; 504. a defective wafer recovery unit; 506. a residual adhesive wafer recovery unit; 514. recovering the wafer with the residual adhesive; m, mounting a plate; s, slicing a base; w, wafer.

Claims (10)

1. A device for peeling and cleaning a wafer is provided,
the wafer peeling and cleaning device peels and cleans wafers adhered to the slicing base one by one from the slicing base,
the wafer stripping and cleaning device is characterized by comprising:
a first stripping chuck having a central axis aligned with a central axis of the wafer; and
and a 2 nd peeling chuck which is disposed closer to the dicing sheet base than the 1 st peeling chuck and which expands and contracts in the axial direction.
2. The wafer stripping and cleaning apparatus as claimed in claim 1,
the 2 nd peeling chuck is a bellows-type vacuum chuck.
3. The wafer peeling and cleaning apparatus according to claim 1 or 2,
the first peeling chuck is a flat vacuum chuck having a flat surface, and has a stronger suction force than the second peeling chuck.
4. The wafer stripping and cleaning apparatus as claimed in any one of claims 1 to 3,
when the wafers bonded to the dicing base are individually peeled and singulated, the wafers are sucked and held by the central axis line of the wafer being sucked by the 1 st peeling chuck after the 2 nd peeling chuck is brought into contact with and pulled toward the end face of the wafer.
5. The wafer stripping and cleaning apparatus as claimed in any one of claims 1 to 4,
the wafer peeling and cleaning device has a reverse stop plate for preventing forward tilting of the wafers when the wafers are peeled one by one from a batch state and singulated,
the surface of the fall board, which is contacted with the wafer, is subjected to waterproof processing,
the 2 nd peeling chuck pulls the wafer toward the fall-stopping plate side with the vicinity of the bonding portion of the wafer in the batch state as a center.
6. The wafer stripping and cleaning apparatus as claimed in any one of claims 1 to 5,
and a swing rotary actuator for swinging the 1 st and 2 nd peeling chucks in a direction along the axis of the wafer is provided, and the wafer is peeled from the dicing base by swinging the 1 st and 2 nd peeling chucks by driving the swing rotary actuator.
7. The wafer stripping and cleaning apparatus as claimed in any one of claims 1 to 6,
a water supply nozzle is provided vertically above the wafers, and hot water or water is supplied vertically above the wafers from the vicinity of the center when the wafers are peeled one by one.
8. The wafer stripping and cleaning apparatus as claimed in any one of claims 1 to 7,
the wafer peeling and cleaning apparatus further includes:
a hot water tank for softening a bonding substance that bonds the wafer to the dicing base; and
an air nozzle provided at a position on both side surfaces of the wafer,
and blowing supply air to a side surface of the wafer by the air nozzle when the wafer is peeled one by sucking and holding an end surface of the wafer adhered to the dicing base placed in the hot water tank by the 1 st and 2 nd peeling chucks.
9. The wafer stripping and cleaning apparatus as claimed in claim 8,
the air nozzle blows out supply air from a lower side toward an upper side of the wafer.
10. The wafer stripping and cleaning apparatus as claimed in claim 8,
the air nozzle blows out supply air with respect to a plurality of wafers in a batch state when peeling 1 wafer.
CN202080009605.0A 2019-01-21 2020-01-20 Wafer stripping and cleaning device Pending CN113302720A (en)

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JP2019-007570 2019-01-21
JP2019-007569 2019-01-21
JP2019007568 2019-01-21
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JP2019-007568 2019-01-21
JP2019007569 2019-01-21
PCT/JP2020/001753 WO2020153307A1 (en) 2019-01-21 2020-01-20 Wafer peeling and cleaning apparatus

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KR102507049B1 (en) * 2022-10-28 2023-03-07 손귀욱 Single wafer separator for semiconductor wafers
KR102507055B1 (en) * 2022-10-28 2023-03-07 손귀욱 Single wafer separator for semiconductor wafers
KR102519871B1 (en) * 2022-10-28 2023-04-11 손귀욱 Single Wafer Separation System

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KR20210100185A (en) 2021-08-13

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