CN113301991A - 钴催化剂及其前体 - Google Patents
钴催化剂及其前体 Download PDFInfo
- Publication number
- CN113301991A CN113301991A CN202080009364.XA CN202080009364A CN113301991A CN 113301991 A CN113301991 A CN 113301991A CN 202080009364 A CN202080009364 A CN 202080009364A CN 113301991 A CN113301991 A CN 113301991A
- Authority
- CN
- China
- Prior art keywords
- catalyst precursor
- cobalt
- catalyst
- range
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 91
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 46
- 239000010941 cobalt Substances 0.000 title claims abstract description 46
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 239000002243 precursor Substances 0.000 title description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 137
- 239000012018 catalyst precursor Substances 0.000 claims abstract description 104
- 239000011148 porous material Substances 0.000 claims abstract description 62
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 46
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 30
- 239000004408 titanium dioxide Substances 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 24
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 18
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 18
- 150000002430 hydrocarbons Chemical class 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 229930195733 hydrocarbon Natural products 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000003786 synthesis reaction Methods 0.000 claims description 14
- 239000011572 manganese Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000001354 calcination Methods 0.000 claims description 12
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 230000009467 reduction Effects 0.000 description 19
- 238000005259 measurement Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 11
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 11
- 229910052753 mercury Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000000376 reactant Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000005470 impregnation Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000003991 Rietveld refinement Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- QGUAJWGNOXCYJF-UHFFFAOYSA-N cobalt dinitrate hexahydrate Chemical compound O.O.O.O.O.O.[Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QGUAJWGNOXCYJF-UHFFFAOYSA-N 0.000 description 5
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 102220043159 rs587780996 Human genes 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000002459 porosimetry Methods 0.000 description 3
- GTCKPGDAPXUISX-UHFFFAOYSA-N ruthenium(3+);trinitrate Chemical compound [Ru+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GTCKPGDAPXUISX-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011067 equilibration Methods 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 238000003921 particle size analysis Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000004375 physisorption Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- QSHYGLAZPRJAEZ-UHFFFAOYSA-N 4-(chloromethyl)-2-(2-methylphenyl)-1,3-thiazole Chemical compound CC1=CC=CC=C1C1=NC(CCl)=CS1 QSHYGLAZPRJAEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910021503 Cobalt(II) hydroxide Inorganic materials 0.000 description 1
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- QRZZGRABHFGTDM-UHFFFAOYSA-L azane;cobalt(2+);carbonate Chemical compound N.[Co+2].[O-]C([O-])=O QRZZGRABHFGTDM-UHFFFAOYSA-L 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001869 cobalt compounds Chemical group 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- -1 perrhenic acid) Chemical class 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000001144 powder X-ray diffraction data Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001507 sample dispersion Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000005563 spheronization Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000010947 wet-dispersion method Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/75—Cobalt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/89—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with noble metals
- B01J23/8913—Cobalt and noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
- B01J20/0203—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of metals not provided for in B01J20/04
- B01J20/0211—Compounds of Ti, Zr, Hf
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
- B01J20/0203—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of metals not provided for in B01J20/04
- B01J20/0225—Compounds of Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
- B01J20/28054—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their surface properties or porosity
- B01J20/28069—Pore volume, e.g. total pore volume, mesopore volume, micropore volume
- B01J20/28071—Pore volume, e.g. total pore volume, mesopore volume, micropore volume being less than 0.5 ml/g
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
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Abstract
本发明描述一种钴催化剂前体,该钴催化剂前体包含设置在二氧化钛担体的孔内的氧化钴微晶,其中该氧化钴微晶具有如通过XRD测定在6nm至18nm范围内的平均尺寸,并且该二氧化钛担体为粒度在100μm至1000μm范围内的球形二氧化钛担体,其中该催化剂前体具有0.2cm3/g至0.6cm3/g的孔容积和在30nm至60nm范围内的平均孔径,并且其中该催化剂前体所具有的该平均氧化钴微晶尺寸与该平均孔径的比率在0.1:1至0.6:1范围内。可还原该催化剂前体以提供适用于费托反应的催化剂。
Description
本发明涉及包含担载在二氧化钛颗粒上的氧化钴的钴催化剂前体、用于制造此类前体的方法以及此类前体在制备固定床费托催化剂中的用途。
所具有的标称直径小于约1mm的费托催化剂提供高反应速率和对C5+烃类改善的选择性的可能性,并且通常与在混悬状态下诸如在浆液鼓泡塔反应器中使用相关联,因为费托催化剂在商业用的固定床中的使用通常将因不可接受的高压降而变得不切实际。
WO2012/146903 A1公开了一种使用小颗粒催化剂的固定床的费托方法,其中催化剂设置在置于外部冷却反应管内的多个催化剂容器内。催化剂颗粒可具有约100μm至约1mm的直径。
虽然此类方法提供了生产改善的烃产物套装的机会,但需要提高适用于固定床费托方法的小颗粒催化剂的性能。
二氧化钛担载的催化剂在费托方法中提供增强的性能。例如,WO97/00231公开了一种在制备包含担载在载体上的钴和锰和/或钒的烃类的方法中使用的催化剂,其中钴:(锰和/或钒)原子比为至少12:1。在示例中,将可商购获得的30目-80目粒度的金红石型二氧化钛颗粒用硝酸钴溶液(含有或不含硝酸锰)浸渍,在120℃下干燥并在400℃下煅烧。US4822824公开了一种可用于由合成气制备高级烃类的催化剂,该催化剂通过将钴和钌沉积在耐火载体诸如二氧化钛上并且氧化和还原催化金属以形成其中钴和钌紧密接触的催化剂来制备。然而,这些催化剂在实验室用的测试设备中测试达相对短时间段。因此,仍然需要适用于商业用的固定床费托方法的小颗粒催化剂,这些小颗粒催化剂表现出高活性和选择性,并且在长期使用期间表现出稳定操作。
因此,本发明提供了一种钴催化剂前体,该钴催化剂前体包含设置在二氧化钛担体的孔内的氧化钴微晶,其中氧化钴微晶具有如通过XRD测定在6nm至18nm范围内的平均尺寸,并且二氧化钛担体为粒度在100μm至1000μm范围内的球形二氧化钛担体,其中催化剂前体具有0.2cm3/g至0.6cm3/g的孔容积和在30nm至60nm范围内的平均孔径,并且其中催化剂前体所具有的平均氧化钴微晶尺寸与平均孔径的比率在0.1:1至0.6:1范围内。
本发明进一步提供了一种用于制备催化剂前体的方法,该方法通过用硝酸钴浸渍球形二氧化钛担体并且干燥和煅烧所浸渍的二氧化钛担体,以在二氧化钛担体的孔内形成氧化钴微晶。
本发明进一步提供了一种催化剂,该催化剂通过借助于还原气体流还原催化剂前体中的氧化钴微晶以形成元素钴微晶而形成。还原气体可在将催化剂前体安装在费托方法中之前异位施加,在这种情况下,催化剂可随后被封装在蜡中,或者在安装在费托方法中之前经受钝化处理。另选地,还原气体可在将催化剂前体安装在费托反应器中之后原位施加。
本发明进一步提供了一种催化剂前体或催化剂的组合,该组合设置在适用于费托反应器的反应管的催化剂载体内。
本发明进一步提供了一种在费托反应器中使用催化剂前体或催化剂以由包含氢气和一氧化碳的合成气产生烃类的方法。
催化剂前体包含氧化钴微晶。氧化钴微晶优选地基本上由Co3O4与不可检测的CoO或其它氧化钴或氢氧化物组成。氧化钴微晶的平均粒度在6纳米(nm)-18纳米、优选地7nm-16nm、更优选地8nm-12nm范围内。平均粒度通过X射线衍射(XRD)来测定。特别合适的方法使用Bruker D8 Advance XRD设备,其中在Lynxeye PSD检测的情况下Cu Kα波长为1.5406埃。该检测系统是有用的,因为可调节操作设置以抑制由钴的存在所生成的荧光。Rietveld精修和Scherrer谱线增宽是XRD微晶尺寸测定的常见方法。尽管可使用任一种方法,但Rietveld精修是优选的。
催化剂前体包含球形二氧化钛担体。术语“球形担体”包括球形度(ψ)为至少约0.90、优选地至少约0.95的担体形状,以及二氧化钛粉末的大致球形附聚物。球形二氧化钛颗粒可称为“微球”。二氧化钛担体的粒度在100微米(μm)至1000微米、优选地300μm-800μm范围内。二氧化钛担体在该范围内的体积中值直径D[v,0.5]优选地在300μm-500μm、更优选地350μm-450μm、最优选地350μm-425μm、尤其375μm-425μm范围内。催化剂前体与催化剂担体具有基本上相同粒度特性。因此,当在商业用的固定床中使用时,尤其是当在多管式费托反应器皿中用作催化剂载体内的固定床时,催化剂前体提供具有可接受压降的高活性催化剂。术语体积中值直径D[v,0.5](有时给出为D50或D0.5)由Dr Alan Rawle在购自MalvernInstruments Ltd,Malvern,UK(www.malvern.co.uk)的论文“Basic Principles ofParticle Size Analysis”中定义,并且根据粒度分析计算,该粒度分析可方便地通过激光衍射例如使用Malvern MastersizerRTM实现。
合适的球形二氧化钛担体是可商购获得的。如果需要,球形二氧化钛担体可方便地由可商购获得的二氧化钛粉末预成形,这些二氧化钛粉末是通过二氧化钛前体(诸如四氯化钛)的火焰水解或火焰热解制备的。可商购获得的二氧化钛粉末通常具有小于5微米的粒度,并且因此球形二氧化钛担体通常包含二氧化钛粉末的附聚物。一种或多种粘结剂(例如聚合物粘结剂)可存在于担体中以增加其强度,但这不是必需的。附聚物可通过产生球体的任何合适成形技术来形成,该任何合适成形技术诸如喷雾干燥、制粒、喷雾制粒、滴铸或滚圆。
二氧化钛担体中已被发现是钴催化的费托反应的毒物的元素(诸如硫和碱金属)含量优选较低。因此,催化剂前体的硫含量有利地<30ppmw,并且催化剂前体的碱金属(例如Na或K)含量优选地<50ppmw。此外,为了避免催化剂制造和处置设备的腐蚀,催化剂前体的氯化物含量优选地小于1500ppmw、尤其小于650ppmw。二氧化钛在成形之前或之后被洗涤以减少这些污染物的存在,以便实现期望的水平。
二氧化钛可以金红石或锐钛矿晶体形式存在。催化剂前体优选地包含含锐钛矿的担体,优选地为富含锐钛矿的担体,其中锐钛矿形式以担体的>50重量%的量存在。更优选地,二氧化钛担体所具有的锐钛矿含量为担体的≥70重量%,并且最优选地,二氧化钛担体所具有的锐钛矿含量为担体的≥80重量%。二氧化钛的锐钛矿形式与金红石形式相比具有更多孔且更软,从而使得其特别适用作费托催化剂前体担体。
有利地,二氧化钛担体具有在25m2/g-75m2/g范围内的BET表面积。
催化剂前体的孔容积在0.20cm3/g至0.60cm3/g、优选地0.30cm3/g至0.50cm3/g范围内。催化剂前体的平均孔径优选地在30nm-60nm、更优选地40nm-50nm范围内。催化剂前体的BET表面积优选地在35m2/g-65m2/g范围内。BET表面积和孔容积可使用氮物理吸附法来测量。孔容积也可使用压汞法来测定。在本发明中,由于孔径相对较大,因此可更适宜地使用压汞法,也称为汞孔隙率法。孔径也可使用这些技术来测定。汞孔隙率法是熟知的技术,其涉及使粉末样本在压力下暴露于汞并测量容积的改变。所谓“平均孔径”是指四倍的孔容积除以表面积(4V/A)。该关系从具有直径D和高度h的直圆柱体的几何结构得出,其中表面积(A)由πDh给出,并且体积(V)由πD2h/4给出。
催化剂前体具有位于催化剂担体的孔内的小氧化钴微晶。催化剂前体所具有的催化剂前体的平均氧化钴微晶尺寸与平均孔径的比率在0.1:1至0.6:1、优选地0.2:1至0.4:1范围内。该比率是令人惊奇的,因为通常认为担体的孔径控制金属氧化物微晶尺寸,并且具有大平均直径的孔将产生大的氧化钴微晶。申请人惊奇地发现,在二氧化钛担体的相对较大孔中形成小氧化钴微晶。申请人已发现,二氧化钛担体物理性质、钴源和制备条件的组合可产生具有受权利要求书保护的比率的催化剂前体,该催化剂前体向费托催化剂提供增强性能。
生成具有受权利要求书保护的比率的催化剂前体的制备方法与现有技术的浸渍/沉积方法(诸如采用碳酸钴氨溶液的那些)形成对比,由于此类方法通常产生平均尺寸通常<5nm的非常小的氧化钴微晶,这些小的氧化钴微晶可能难以还原,并且一旦还原,就趋于在FT条件下快速烧结,从而导致活性损失。
不受理论的束缚,由于平均孔径与平均钴微晶尺寸的受权利要求书保护的比率有利于反应物和产物向和从位于孔结构内的催化活性位点扩散,因此可产生由具有受权利要求书保护的比率的催化剂前体引起的提高的催化剂性能,从而增强催化剂选择性以及提供高活性。此外,使用具有相对较大孔并且用相对较小氧化钴微晶填充这些孔的二氧化钛担体提供了以下优点:与先前可能的相比,提供更长的烃链产物以及可能更高的α值。
氧化的催化剂前体的钴含量优选地在5重量%至25重量%、更优选地8重量%至16重量%范围内,以Co表示。尽管钴含量相对较低,但所得催化剂在费托反应中具有令人惊奇的高活性/克。在活性催化剂中,催化剂前体中的氧化钴的至少一部分被还原成元素形式,这增大了当氧化钴中的氧原子被除去时活性催化剂中钴的比例。特别有效的催化剂在氧化钴的还原程度为80摩尔%时包含8重量%至12重量%的钴。
催化剂前体可进一步包含一种或多种添加剂和/或促进剂以增强费托方法中的催化性能。添加剂通常以比促进剂更高的浓度掺入到催化剂前体中。合适的添加剂选自以下各项的化合物:钡(Ba)、银(Ag)、铜(Cu)、镍(Ni)、铁(Fe)、钒(V)、锡(Sn)、镓(Ga)、锰(Mn)、锆(Zr)、镧(La)、铈(Ce)、镁(Mg)、锌(Zn)、铝(Al)、钍(Th)、钨(W)或硅(Si)。合适的促进剂包括铑(Rh)、铱(Ir)、钌(Ru)、铼(Re)、铂(Pt)以及钯(Pd)。已发现,二氧化钛担载的钴费托催化剂优选地还包含锰,该锰作为一种或多种锰氧化物存在于催化剂前体中。如果需要,催化剂前体中可包含选自Ru、Re和Pt的一种或多种促进剂。添加剂和/或促进剂可通过使用合适的化合物来掺入到催化剂前体中,这些化合物诸如酸(例如,高铼酸)、金属盐(例如,金属硝酸盐和含氧硝酸盐或金属乙酸盐)或合适的金属有机化合物(诸如金属醇盐或金属乙酰丙酮盐)。添加剂金属的量可在催化剂前体中在1重量%和25重量%之间、优选地在催化剂前体中在1重量%和15重量%之间变化。促进剂金属的量可在催化剂前体中在0.01重量%和1.00重量%之间、优选地在催化剂前体中在0.01重量%和0.50重量%之间变化。
催化剂前体通过以下方式制备:用硝酸钴溶液浸渍球形二氧化钛担体并且干燥和煅烧所浸渍的二氧化钛担体,以在二氧化钛担体的孔内形成氧化钴微晶。如有必要,可重复浸渍、干燥和/或煅烧,以获得期望的催化剂前体。
硝酸钴优选地为六水合硝酸钴(II),其可例如通过加热至高于50℃而溶解于其水合水中,以形成熔融硝酸钴的浓溶液。另选地,硝酸钴可溶解于水或另一种溶剂中以形成更稀溶液。水(有利地为去离子水)是优选溶剂。浸渍可通过在合适的混合机(诸如犁刀混合机)中向球形二氧化钛担体添加硝酸钴溶液来进行。浸渍优选地用受热的硝酸钴溶液在高于50℃的温度下进行。所用的硝酸钴溶液的体积优选地接近二氧化钛担体的总孔容积。这种浸渍(其可称为“干式浸渍”或“始润浸渍”)有利地改善了钴化合物在担体的孔内的沉积并使所需的干燥量最小化。如果需要,则可将添加剂和/或促进剂的合适化合物以合适的量添加到硝酸钴溶液。另选地,这些化合物可在干燥之前或之后和/或在最终煅烧之前与催化剂前体组合。
对所浸渍的担体进行干燥以除去存在于硝酸钴溶液中的溶剂(通常为水),并且有利地在担体的孔中留下部分水合的硝酸钴。干燥步骤优选地在50℃-150℃范围内的温度下进行。干燥步骤可在大气压下在空气或惰性气体(诸如氮气)中,或在真空下进行。干燥时间可根据需要在0.5小时至16小时范围内,但更优选地在80℃-120℃下进行1小时-5小时。
所干燥的浸渍担体为含有硝酸钴(优选为部分水合的硝酸钴)的自由流动粉末。为了产生催化剂前体,使所干燥的材料经受可称为煅烧的热处理,以将硝酸钴转化成具有期望的微晶尺寸范围的结晶氧化钴。热处理可常规地在空气中或者通过在氮气或另一种非还原气体混合物下加热所干燥材料或通过在真空下加热进行。热处理可在静态或移动床烘箱中,或优选地在流化床反应器中进行。令人惊讶地已发现,流化床反应器产生具有小平均氧化钴微晶尺寸(例如,在6nm-12nm、尤其7nm-8nm范围内)的催化剂前体。本发明中的煅烧温度有利地在220℃-320℃、优选地在240℃至300℃的温度范围内,以使氧化钴微晶的烧结最小化并维持钴表面积。在这些温度下的煅烧还避免了将二氧化钛担体中的锐钛矿转化成金红石形式的可能性。煅烧时间可根据需要在0.5小时-16小时范围内,但优选地在240℃-300℃下进行1小时-4小时。在流化床条件下,在常温和常压(NTP)下,煅烧气时空速(GHSV)可为1000hr-1-5000hr-1、优选地2000hr-1-4000hr-1。
煅烧步骤之后可进行抛光步骤,在该抛光步骤中,所煅烧材料在不引起氧化钴还原为元素形式的条件下在稀氢气流中经受加热。抛光步骤可有利地用于降低所煅烧材料的残余硝酸盐含量。氢气流可在惰性气体(诸如氮气)中例如由0.1体积%至10体积%的氢气、优选地1体积%-5体积%的氢气组成。压力可为1巴-10巴绝对压力、优选地1巴-3巴绝对压力。抛光步骤的最高温度可在100℃-225℃、优选地140℃-200℃范围内。抛光步骤可根据需要适宜地进行0.5小时-16小时,但优选地其在140℃-200℃下进行1小时-3小时。在常温和常压(NTP)下,抛光步骤中氢气/惰性气体流的气时空速(GHSV)可为50hr-1-2000hr-1、但优选地50hr-1-1000hr-1、更优选地100hr-1-500hr-1。在这些条件下,氧化钴基本上不发生还原。抛光步骤将催化剂前体中的残余硝酸盐降低至低于0.1重量%的水平,使得可进行后续还原而无需采取特殊步骤来管理还原期间形成的氨。当将催化剂前体被原位还原时,即在催化剂前体将用于费托方法的反应器中,这是尤其有用。
催化剂前体可安装在催化剂前体将用于费托反应的反应器中,并且通过将氧化钴的至少一部分原位还原为元素形式来活化以形成催化剂。此类活化可使用任何合适的还原剂进行,但优选地使用选自氢气气体流或包含氢气和一氧化碳的合成气流的还原气体流进行。还原气体流可在惰性气体(诸如氮气)中由1体积%-100体积%的氢气组成,或者可为合成气。合成气适宜地可为基本上由氢气和一氧化碳组成的费托合成气,其中氢气:一氧化碳的摩尔比在1.6至2.2范围内。还原气体可另选地包含这些气体的混合物。在常温和常压(NTP)下,还原气体通过催化剂前体的气时空速(GHSV)可为4000hr-1至10000hr-1。还原气体的气时空速可在还原期间得以变更以控制氧化钴和还原的钴暴露于水蒸汽。用于还原阶段的最高温度可在250℃-400℃范围内、但优选地在250℃-300℃范围内,以使还原的钴微晶的烧结最小化。还原可在环境压力或增大压力下进行,即,还原气体的压力可为1巴-50巴绝对压力。
另选地,催化剂前体可在还原器皿中异位预还原以提供催化剂。预还原可使用任何合适的还原剂进行,但优选地使用在环路中操作的氢气气体流进行,其中从再循环的还原气体流中除去副产物水。氢气流可在惰性气体(诸如氮气)中由10体积%-100体积%的氢气组成。氢气在还原气体中的浓度可在还原期间变化。在常温和常压(NTP)下,氢气/惰性气体流的气时空速(GHSV)可为3000hr-1至10000hr-1、优选地为4000hr-1至10000hr-1。还原气体的气时空速可在还原期间得以变更以控制氧化钴和还原的钴暴露于水蒸汽。用于还原阶段的最高温度可在250℃-400℃范围内、但优选地在250℃-300℃范围内,以使还原的钴微晶的烧结最小化。还原可在环境压力或增大压力下进行,即,还原气体的压力可为1巴-50巴、优选地1巴-20巴、更优选地1巴-10巴绝对压力。
还原态的催化剂可能难以处置,因为它们可自发地与空气中的氧气反应,这可导致不期望的自发热和活性损失。因此,还原的催化剂可通过用合适的屏障涂层封装还原的催化剂来得到保护。就费托催化剂而言,这适宜地可为烃蜡,诸如由费托合成产生的蜡。另选地,还原的催化剂可在还原之后通过使其暴露于含氧气体(诸如空气或氧气)来钝化,该含氧气体可用惰性气体(诸如氮气)稀释,以在钴微晶上形成氧化钴的保护性外层。一旦将催化剂安装在费托反应器内,就可通过在氢气气体流或合成气流下加热催化剂来从催化剂中除去氧化钴的封装蜡或钝化外层。
无论选取哪种途径;钴催化剂提供高的金属表面积/克还原金属。例如,当在250℃下被氢气还原时,催化剂前体优选地具有如通过氢化学吸附测量的≥5m2/g催化剂的钴表面积。
从催化剂前体获得的催化剂对于烃类的费托合成特别有效。使用钴催化剂的烃类的费托合成被良好地建立。费托合成将一氧化碳和氢气的混合物转化成烃类,优选地碳链长度≥5的烃类。一氧化碳和氢气的混合物通常是所具有的氢气:一氧化碳比率在1.6:1至2.2:1范围内的合成气。反应可使用一个或多个反应器(诸如固定床反应器、浆液反应器(slurry-phase reactor)、鼓泡塔反应器、环路反应器或流化床反应器)以连续或间歇方法进行。该方法可在0.1Mpa至10Mpa范围内的压力和在150℃至350℃范围内的温度下操作。连续操作的气时空速(GHSV)在1000hr-1至25000hr-1范围内。
本发明的催化剂特别适合用作固定床催化剂,即,固定在反应物合成气所穿过的反应器皿内的催化剂床。
催化剂前体物理性质意指其适用于微通道反应器(即,具有合成气所穿过的多个含有催化剂的通道的费托反应器,该多个含有催化剂的通道具有在2mm-10mm范围内的宽度或高度),或者适用于置于费托反应器皿(诸如下流的多管式费托反应器皿)内的反应管中的催化剂载体。
已发现催化剂或催化剂前体在与适用于管式反应器的催化剂载体结合地使用时特别有效。所谓“催化剂载体”是指例如呈杯或罐形式的催化剂容器,该催化剂容器被构造成允许气体和/或液体流入和流出载体并流过设置在载体内的催化剂或催化剂前体的床。可使用任何合适的催化剂载体。在一种布置中,催化剂载体为在WO2011/048361中描述的催化剂载体,该专利的内容以引用方式并入本文。在WO2011/048361中描述的催化剂载体包括:环形容器,该环形容器用于在使用时保持催化剂,所述容器具有限定管的打孔内壁、打孔外壁、封闭环形容器的顶表面以及投配环形容器的底表面;表面,该表面封闭由环形容器的内壁形成的所述管的底部;裙状部,该裙状部自环形容器的打孔外壁从所述容器的底表面处或附近的位置向上延伸到密封件的位置下方的位置;以及密封件,该密封件位于顶表面处或附近并且从该容器延伸出一定距离,该距离延伸超出裙状部的外表面。在一个另选的布置中,催化剂载体可为在WO2016/050520中公开的催化剂载体,该专利的内容以引用方式并入本文。因此,催化剂载体可包括:容器,该容器适于将催化剂前体或催化剂保持在适当位置,所述容器具有封闭容器的底表面以及顶表面;载体外壁,该载体外壁从所述容器的底表面延伸到顶表面;密封件,该密封件从容器延伸出一定距离,该距离延伸超出载体外壁;所述载体外壁具有位于密封件下方的开孔。在优选的布置中,催化剂载体可包括:环形容器,该环形容器适于将催化剂前体或催化剂保持在适当位置,所述容器具有限定内通道的打孔容器内壁、打孔容器外壁、封闭环形容器的顶表面以及封闭环形容器的底表面;以及表面,该表面封闭由环形容器的容器内壁形成的所述内通道的底部。催化剂载体的尺寸通常将被设定成使得其与在使用时放置催化剂载体的反应管的内部尺度相比具有更小尺度。密封件的尺寸将被设定成使得当本发明的催化剂载体位于反应管内的适当位置时,密封件与反应管的内壁相互作用。
在具有下流的竖式反应器中使用时,反应物向下流过反应管,并且因此首先接触催化剂载体的上表面。由于密封件阻挡反应物围绕载体的侧面通过,因此其顶表面将反应物引导到由容器内壁限定的内通道中。然后反应物通过打孔容器内壁进入环形容器,并且然后朝向打孔容器外壁径向穿过催化剂床。在从容器内壁到容器外壁的通过期间,反应物接触催化剂并发生费托反应。未反应的反应物和产物随后通过打孔容器外壁流出容器。然后载体外壁在载体外壁的内表面和环形容器的打孔容器外壁之间向上引导反应物和产物,直到它们到达载体外壁中的开孔为止。然后将反应物和产物引导通过位于载体外壁中的开孔,并且在发生热传递的情况下在载体外壁的外表面和反应管的内表面之间向下流动。在操作反应器以使得流动反向的情况下,路径将反向。
可将催化剂前体装载到催化剂载体中,并且将所得组合装载到费托反应器皿的反应管中,以如上所述原位还原和活化催化剂。另选地,该组合可在还原器皿中经受异位还原,并且该组合被封装或经受钝化处理。然后可将所得组合安全地装载到费托反应器皿的反应管中。
现将参考以下实施例进一步描述本发明。
在实施例中,进行以下测量。
粒度:根据ASTM D4464,通过使用Malvern Mastersizer 3000激光衍射粒度分析仪,使用来自仪器软件中Malvern MS3000光学性质数据库的TiO2(锐钛矿)的光学性质进行激光散射来测定粒度。(折射率2.51,吸收指数0.01)。在去离子水中利用Hydro MV样本分散单元,使用0%和85%超声处理和50%的搅拌器速度进行湿式分散测量。将足够的样本添加到单元,直到激光束被遮挡介于0.1%和20%之间为止。对样本的每个等分试样进行五次测量,其中测量持续时间为5秒。在具有微体积托盘和标准文丘里管的Aero干式分散单元中,使用0.5巴和3.0巴的分散气压,使用现场压缩空气,以20%的进料速率进行干式分散测量。对样本的每个等分试样进行一次测量,其中在每次测量中测量整个等分试样。当激光束被遮挡介于0.1%和10%之间时,测量持续时间为15秒。为了计算结果,Malvern软件使用米氏理论将所得的衍射图案转化成粒度分布。
孔容积。汞压入/压出数据根据ASTM方法D4284-03在Micromeritics AutoPore9520压汞仪上测量;用于通过汞孔隙率法测定催化剂的孔容积分布的测试方法。在0.5psia至60000psia的压力范围内测量压入曲线,之后向下压出至大气压。对于压入曲线和压出曲线两者上的每个数据点,使用15秒的平衡时间,汞接触角取为140°,并且汞表面张力取为485达因/厘米。将样本在115℃烘箱中干燥过夜,之后进行分析。通过空透度计管上的空白校正运行(其随后从实验数据中被减去)来考虑在孔隙率测量期间显现的温度和压力效应。
根据ASTM方法D 3663-03,使用Micromeritics 2420ASAP物理吸附分析仪,通过应用BET方法来测量表面积;表面积的标准测试。氮用作吸附物,并且测量在液氮温度(77K)下进行。氮分子的横截面积取为在分析之前,通过在140℃下用干燥氮气吹扫最少1小时来对样本进行除气。在0.05P/Po至0.20P/Po(包括端值在内)的相对压力区域内获得五个相对压力/容积数据对。每个点的平衡时间为10秒。基于除气后样本的重量报告表面积。
平均孔径。由孔容积和表面积测量结果计算平均孔径。平均孔径是四倍的所校正孔容积除以所计算的表面积(4V/A)。该关系从具有直径D和高度h的直圆柱体的几何结构得出,其中表面积(A)由πDh给出,并且体积(V)由πD2h/4给出。
中值孔径。中值孔径从孔容积测量结果得出。所谓“中值孔径”是指表示累积汞压入曲线的中点的孔径,其针对粒间空隙填充进行了校正。
钴含量。通过ICPAES(电感耦合的等离子体原子发射光谱法)或ICPMS(电感耦合的等离子体质谱法)在所煅烧的催化剂前体上测定,表示为在无损耗的基础上钴的重量百分比。
氧化钴微晶尺寸。使用Bruker D8 Advance X射线衍射仪,通过XRD来测定氧化钴微晶尺寸。将粉末催化剂前体样本压入样本保持器中并装载到仪器中。平行光束(哥波尔(Gobel)反射镜)光学件。软件;用于相鉴定的Bruker EVA;用于图案精修的Topas。衍射仪条件如下:
X射线在Lynxeye PSD检测的情况下Cu Ka波长为1.5406A。
Rietveld分析(Bruker Topas v4.2)用于测定氧化钴微晶尺寸。对粉末XRD数据的Rietveld精修基于对称信息和近似结构以计算衍射图案开始。Rietveld精修然后使用最小二乘解来将每个观察点与所计算的曲线图进行比较,并且对所计算的结构进行精修以使差值最小化。
钴表面积。在Micromeritics 2480HTP 6Station化学吸附分析仪上测量钴金属表面积。在250℃下用100体积%的氢气将样本以200SCCM的氢气流速还原120分钟。在还原阶段完成之后,用氦气吹扫样本15分钟,之后在真空下冷却至35℃的分析温度。在实现<10μmHg的真空之后,继续抽真空45分钟。然后在100mmHg和760mmHg之间的压力范围内,向样本投配100体积%的氢气。在每个压力下,使化学吸附的氢气平衡,并且自动测量并记录氢气摄入的体积。绘制压力/摄入对以给出等温线,该等温线表现出良好限定的平台区域。在该区域内选择数据点以实现最佳线拟合,然后将该最佳线拟合外推回到零压力。截距值用于使用H2/Co的1.0的化学计量来计算钴表面积,并且基于还原催化剂的质量报告钴表面积。
实施例1:312μm二氧化钛球体上的催化剂前体制备
a)20重量%Co,0.2重量%Ru。
(i)将346.4g六水合硝酸钴晶体(19.80重量%Co)和5.4g硝酸钌溶液(12.54重量%Ru)置于玻璃烧杯中,并在热板上加热至80℃。在预热的Z叶片式混合机中向500.05g的312μmD50二氧化钛球体(通过XRD分析,>85重量%锐钛矿)添加热溶液。在添加溶液之前,二氧化钛的温度为65℃,并且混合机壁为69℃。在大约4分钟内将溶液倾注到混合二氧化钛球体中。在添加溶液之后,继续混合2分钟。将842.0g已浸渍材料排出并置于7个不锈钢托盘中。然后将该材料在110℃下干燥3小时,并在280℃下煅烧2小时。制备599.9g已煅烧材料。
(ii)将594.3g来自步骤(i)的已煅烧材料置于预热Z叶片式混合机中。将286.7g六水合硝酸钴晶体和4.6g硝酸钌置于玻璃烧杯中,并在热板上加热至80℃。在添加溶液之前,材料的温度为64℃,并且混合机壁为68℃。在大约三分钟内将溶液倾注到混合材料中。在添加溶液之后,继续混合2分钟。将876.2g已浸渍材料排出并置于7个不锈钢托盘中。然后将该材料在110℃下干燥3小时,并在280℃下煅烧2小时。制备671.8g已煅烧材料。
FT催化剂前体表征
D50=311μm
BET SA=39m2/g
Co SA=8m2/g
Hg压入体积=0.23cm3/g
Hg平均孔径=36nm
Hg中值孔径=42nm
Co3O4微晶尺寸(XRD)=13.5nm
Co含量(ICP)=18.4重量%
Ru含量(ICP)=0.15重量%
催化剂前体的平均氧化钴粒度与平均孔径的比率=13.5:36=0.38:1
b)11重量%Co,1重量%Mn。
将320.6g六水合硝酸钴晶体(19.80重量%Co)和12.0g去离子水置于玻璃烧杯中,并在热板上加热。在60℃下添加39.14g硝酸锰溶液(15.4重量%Mn),并且将混合物进一步加热直至达到70℃为止。在预热的Z叶片式混合机中向500.05g的312μm D50二氧化钛球体(通过XRD分析,>85重量%锐钛矿)添加热溶液。在添加溶液之前,二氧化钛的温度为64℃,并且混合机壁为68℃。在大约三分钟内将溶液倾注到混合二氧化钛球体中。在添加溶液之后,继续混合2分钟。将852.2g已浸渍材料排出并置于7个不锈钢托盘中。然后将该材料在100℃下干燥3小时,并在250℃下煅烧2小时。制备596.7g已煅烧材料。
FT催化剂前体表征
D50=310μm
BET SA=44m2/g
Co SA=6m2/g
Hg压入体积=0.28cm3/g
Hg平均孔径=37nm
Hg中值孔径=45nm
Co3O4微晶尺寸(XRD)=13.0nm
Co含量(ICP)=10.4重量%(氧化物)
Mn含量(ICP)=0.96重量%(氧化物)
催化剂前体的平均氧化钴粒度与平均孔径的比率=13:37=0.35:1。
实施例2:413μm二氧化钛球体上的催化剂前体制备
a)11重量%Co,1重量%Mn,
使用413μm D50二氧化钛球体重复实施例1(b)的方法。
FT催化剂前体表征
D50=412μm
BET SA=43m2/g
Co SA=5m2/g
Hg压入体积=0.29cm3/g
Hg平均孔径=43nm
Hg中值孔径=43nm
Co3O4微晶尺寸(XRD)=14.8nm
Co含量(ICP)=10.6重量%(氧化物)
Mn含量(ICP)=1.03重量%(氧化物)
催化剂前体的平均氧化钴粒度与平均孔径的比率=14.8:43=0.34:1。
实施例3:比较例:309μm氧化铝球体上的催化剂制备
a)20重量%Co,0.2重量%Ru。
将12.5Kg氧化铝球体(γ-Al2O3)置于RT80混合机中,并在80℃下开启水浴。将其静置过夜以进行加热。将15.9Kg六水合硝酸钴晶体(19.80重量%Co)、240g硝酸钌(13.0重量%Ru)和1210.0g去离子水在热板上的不锈钢烧杯中加热,直到硝酸钴晶体已熔化为止。然后将溶液转移到预热的喷雾反应釜中。在54℃下将热溶液喷涂到氧化铝球体上。然后在20分钟内喷涂该溶液。在溶液添加之后,继续混合1分30秒,之后将材料排出到转筒中。将28.865Kg材料排出。将材料置于不锈钢托盘中,这些不锈钢托盘被置于烘箱中并在110℃下干燥3小时。将所干燥材料分成四个批次。将四个批次中的每个批次在110℃下重新干燥30分钟,然后在280℃下煅烧2小时。
比较FT催化剂前体表征
D50=305μm
BET SA=153m2/g
Co SA=12m2/g(425℃还原)
Hg压入体积=0.45cm3/g
Hg平均孔径=14nm
Hg中值孔径=13nm
Co3O4微晶尺寸(XRD)=15.5nm
Co含量(ICP)=18.4重量%(氧化物)
Ru含量(ICP)=0.13重量%(氧化物)
催化剂前体的平均氧化钴粒度与平均孔径的比率=15.5:14=1.11:1。
实施例4:催化剂测试
使用置于具有4mm内径的实验室反应管中的0.5g用2.00g SiC稀释的催化剂前体进行测试。在300℃(梯度1℃/min)下在纯氢气中使用60ml/min的流速原位还原7小时之后,然后将温度降低至150℃,并将气体切换为合成气(H2:CO=2:1),并且使用110ml/min的流速将反应器加压至20巴。在6小时之后,将温度升高(1℃/min)至210℃并静置过夜达约16小时。然后将流速首先降低至50ml/min,然后降低至实现50%合成气转化所需的流速,并且在测试期间(约160小时)继续进行数据收集。使用质量流量控制器将入口气体计量到反应器中。通过气相色谱法分析气态、液态和固态烃类产物和水相,以实现计算CO转化率和选择性的质量平衡。根据作为n的函数的log(Wn/n)曲线图的斜率计算α,其中梯度为log(α),其中Wn为碳数量为n的烃的重量分数,并且α为链生长概率。该表达从Anderson Schulz-Flory分布得出,Wn=nαn-1(1-α)2。通常,C20-C40为用于计算α的碳数量的范围。结果如下:
将实施例1(a)与实施例3(a)进行比较,结果表明,与在对应的球形氧化铝担体上的相同金属和促进剂水平相比,根据本发明的二氧化钛球体担载的催化剂前体产生了具有增强活性并对高级烃类具有选择性的催化剂。实施例2(a)表明与实施例1(a)相比,二氧化钛球体担体上的Mn促进的钴催化剂具有改善的性能。
Claims (23)
1.一种钴催化剂前体,所述钴催化剂前体包含设置在二氧化钛担体的孔内的氧化钴微晶,其中所述氧化钴微晶具有如通过XRD测定在6nm至18nm范围内的平均尺寸,并且所述二氧化钛担体为粒度在100μm至1000μm范围内的球形二氧化钛担体,其中所述催化剂前体具有0.2cm3/g至0.6cm3/g的孔容积和在30nm至60nm范围内的平均孔径,并且其中所述催化剂前体所具有的平均氧化钴微晶尺寸与所述平均孔径的比率在0.1:1至0.6:1范围内。
2.根据权利要求1所述的钴催化剂前体,其中所述氧化钴微晶具有在7nm-16nm、优选地8nm-12nm范围内的平均尺寸。
3.根据权利要求1或权利要求2所述的钴催化剂前体,其中所述催化剂前体的粒度在300μm-800μm范围内。
4.根据权利要求1至3中任一项所述的钴催化剂前体,其中所述催化剂前体的体积中值直径D[v,0.5]在300μm-500μm范围内。
5.根据权利要求1至4中任一项所述的钴催化剂前体,其中所述催化剂前体的硫含量为<30ppmw,所述催化剂前体的碱金属含量为<50ppmw,并且所述催化剂前体的氯化物含量为<1500ppmw,尤其为≤650ppmw。
6.根据权利要求1至5中任一项所述的钴催化剂前体,其中所用的所述二氧化钛担体是含锐钛矿的担体,其中锐钛矿以所述担体的>50重量%、优选地≥70重量%、最优选地≥80重量%的量存在。
7.根据权利要求1至6中任一项所述的钴催化剂前体,其中所述催化剂前体的所述孔容积在0.2cm3/g至0.6cm3/g范围内,并且所述平均孔径在30nm-60nm、优选地40nm-50nm范围内。
8.根据权利要求1至7中任一项所述的钴催化剂前体,其中所述催化剂前体的钴含量在5重量%至25重量%、更优选地8重量%至16重量%范围内,以Co表示。
9.根据权利要求1至8中任一项所述的钴催化剂前体,所述钴催化剂前体还包含选自如下各项的化合物的一种或多种添加剂:钼(Mo)、钡(Ba)、银(Ag)、铜(Cu)、镍(Ni)、铁(Fe)、钒(V)、锡(Sn)、镓(Ga)、锰(Mn)、锆(Zr)、镧(La)、铈(Ce)、铬(Cr)、镁(Mg)、锌(Zn)、铝(Al)、钍(Th)、钨(W)或硅(Si),其中添加剂金属的量在所述催化剂前体上介于1重量%和25重量%之间、优选地介于1重量%和15重量%之间。
10.根据权利要求1至9中任一项所述的钴催化剂前体,所述钴催化剂前体还包含选自如下各项的一种或多种促进剂:铑(Rh)、铱(Ir)、钌(Ru)、铼(Re)、铂(Pt)和钯(Pd),其中促进剂金属的量在所述催化剂前体上介于0.01重量%和1.00重量%之间、优选地介于0.10重量%和0.50重量%之间。
11.一种用于制备根据权利要求1至10中任一项所述的催化剂前体的方法,所述方法通过用硝酸钴溶液浸渍球形二氧化钛担体并且干燥和煅烧所浸渍的二氧化钛担体,以在所述二氧化钛担体的所述孔内形成氧化钴微晶。
12.根据权利要求11所述的方法,其中所述浸渍在高于50℃的温度下用受热的硝酸钴溶液进行。
13.根据权利要求11或权利要求12所述的方法,其中所用的所述硝酸钴溶液的体积等于或小于所述二氧化钛担体的总孔容积。
14.根据权利要求11至13中任一项所述的方法,其中所浸渍的担体在于50℃-150℃范围内的温度下干燥。
15.根据权利要求11至14中任一项所述的方法,其中所述煅烧在于200℃-350℃、优选地230℃-320℃范围内的温度下进行。
16.根据权利要求11至15中任一项所述的方法,其中所述煅烧在流化床反应器中进行。
17.一种包含元素钴微晶的催化剂,所述催化剂通过用还原气体流还原根据权利要求1至10中任一项所述的催化剂前体中的所述氧化钴微晶而形成。
18.根据权利要求17所述的催化剂,其中所述催化剂经受钝化处理或被封装在烃蜡中。
19.一种根据权利要求1至10中任一项所述的催化剂前体或根据权利要求17或权利要求18所述的催化剂的组合,所述组合设置在适用于费托反应器的反应管的催化剂载体内。
20.根据权利要求19所述的组合,其中所述催化剂载体包括:环形容器,所述环形容器适于将所述催化剂前体或所述催化剂保持在适当位置,所述容器具有限定内通道的打孔容器内壁、打孔容器外壁、封闭所述环形容器的顶表面以及封闭所述环形容器的底表面;以及表面,所述表面封闭由所述环形容器的所述容器内壁形成的所述内通道的底部。
21.一种根据权利要求1至10中任一项所述的催化剂前体或根据权利要求17或权利要求18所述的催化剂在费托反应器中在由包含氢气和一氧化碳的合成气产生烃类的方法中的用途。
22.根据权利要求21所述的用途,其中所述费托反应器为微通道反应器、多管式费托反应器、浆液反应器、浆液鼓泡塔反应器、环路反应器或流化床反应器。
23.根据权利要求21所述的用途,其中所述催化剂前体或所述催化剂包括根据权利要求19或权利要求20所述的组合,并且所述费托反应器为多管式费托反应器。
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