CN113238456B - 一种采用具厚度变化的可挠式模仁的压印方法 - Google Patents
一种采用具厚度变化的可挠式模仁的压印方法 Download PDFInfo
- Publication number
- CN113238456B CN113238456B CN202110555887.0A CN202110555887A CN113238456B CN 113238456 B CN113238456 B CN 113238456B CN 202110555887 A CN202110555887 A CN 202110555887A CN 113238456 B CN113238456 B CN 113238456B
- Authority
- CN
- China
- Prior art keywords
- mold core
- stamping
- substrate
- core
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 22
- 239000003292 glue Substances 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 11
- 238000006073 displacement reaction Methods 0.000 claims description 10
- 238000004049 embossing Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 229920001971 elastomer Polymers 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 4
- 238000000016 photochemical curing Methods 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/02—Moulds or cores; Details thereof or accessories therefor with incorporated heating or cooling means
- B29C33/06—Moulds or cores; Details thereof or accessories therefor with incorporated heating or cooling means using radiation, e.g. electro-magnetic waves, induction heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/40—Plastics, e.g. foam or rubber
- B29C33/405—Elastomers, e.g. rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/76—Measuring, controlling or regulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
- B29L2007/001—Flat articles, e.g. films or sheets having irregular or rough surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
本发明公开了一种采用具厚度变化的可挠式模仁的压印方法,采用一底部具奈米压印的微结构的模仁本体,且该模仁本体的厚度是自其周缘向中间逐渐增厚,本压印方法使得具厚度变化的可挠式模仁受一力量或位移时,会产生较大的压缩量,造成该模仁本体底部的微结构与受压印的物件产生较大的接触压力,并透过模仁本体的厚度差异,而于脱模时控制模仁本体的变形量,以改善过去因拔模角度过大或急遽的压力释放造成的缺陷问题。
Description
本发明是分案申请,原申请的申请日为“2017年08月11日”,申请号为“201710684792.2”,发明创造名称为“具厚度变化的可挠式模仁”。
技术领域
本发明属于纳米压印技术领域,尤指一种可以精确控制压力分布的压印机制与机构,以掌控压印过程中高分子阻剂胶层的流动方式,进而确保大面积下高分子残留层的厚度与均匀性的采用具厚度变化的可挠式模仁的压印方法。
背景技术
奈米压印(Nano-Imprinting)技术的发展已有20年的历史,在国、内外的学术界与产业界都产生一定的冲击与影响,许多新的方法、技术、材料、机台、甚至专业厂商都陆续出现,并积极寻求可能的产业应用。平心而论,奈米压印技术仍然存在许多重大的技术瓶颈,有待学术界与产业界共同突破;举其大者而言,包括:(1).压印模仁的制作方式、成本、与使用寿命;(2).大面积下压印残留层厚度与均匀性的控制;(3).重复或多层对位的精度控制;(4).整体制程良率与成本的竞争力…等等。
奈米压印技术的核心概念,是以简单的机械与力学原理,取代复杂的光学微影技术,复制出大面积与小特征尺度的微/奈米结构。它的核心技术是:接触、施压、成型、脱模,其中可能伴随着高分子材料对温度与光的物理与化学变化。奈米压印的挑战在于必须以机械的方式同时兼顾两个极端的尺度:大尺度(4”、6”、8”)的成型面积、与小线宽(μm,sub-μm,and nm)的结构特征。虽然目前已经有许多种类的奈米压印技术,但是大部分技术的共同基本特征是要将一高分子材料均匀地成型于一片模仁(mold)与一片基板(substrate)之间;成型后的高分子层须能忠实复制模仁表面的微/奈米结构,且其压印面积内的残留层(residual layer)厚度必须小于一定要求,例如10~100nm。
检视学术界与产业界现有的奈米压印机台设计与压印技术,令人惊讶的是在施压过程中均缺乏精准的力学控制,例如施压过程中是平均施压于模仁上,使得模仁与基板间的接触压力平均;另外在脱模过程中,常常会因急遽的压力释放造成的缺陷问题,造成微结构断裂的状况。
因此现有的奈米压印机台设计与压印技术对高分子阻剂胶层的成型过程,与对最终残留层的控制能力都非常有限与薄弱;这可能是奈米压印技术与其产业应用上最关键的技术瓶颈之一。
发明内容
为解决上述现有技术的问题,本发明的一目的是在于提供一种可在奈米压印过程中提供高精准的力学控制,以精准地传递与分布到受压的高分子层状材料的采用具厚度变化的可挠式模仁的压印方法。
为解决上述现有技术的问题,本发明的另一目的是在于提供一种可以吸收基板的不平整性、均匀地分布压力、并可控制地驱动高分子层流动的采用具厚度变化的可挠式模仁的压印方法。
为达成上述的目的,本发明采用如下技术方案:
一种采用具厚度变化的可挠式模仁的压印方法,该可挠式模仁包括一模仁本体,该模仁本体的厚度是自该模仁本体的周缘向该模仁本体中间逐渐变化,且该模仁本体的底面具有奈米压印的微结构;
该压印方法为于该模仁本体上表面以一硬质背板施加一力量或位移,使得该模仁本体的压印面变形凸出,压印面中心区域与基板上的阻剂胶接触,通过进一步缩短硬质背板与基板间的相对距离,基于该模仁本体中心有较厚的厚度,受到硬质背板与基板挤压时会产生较大的压缩量,造成该模仁本体的压印面与基板间有较大的接触压力,迫使阻剂胶充填微结构模穴,并将多余的阻剂胶挤压向外围流动至基板边缘。
其中,该模仁本体是以热固性硅胶材料、光固化性硅胶材料、橡胶材料、塑料材料浇铸成型。
为达成上述的目的,本发明还提供另一技术方案:
一种采用具厚度变化的可挠式模仁的压印方法,其特征在于,该可挠式模仁包括:一模仁本体,该模仁本体包含:
一压印模仁,该压印模仁下表面具有奈米压印的微结构;
一软性模仁,该软性模仁是为一自周缘向中间逐渐变化的弹性体,该软性模仁是用以自该压印模仁上表面向该压印模仁施压;
该压印方法为将软性模仁与硬质背板结合,并施加位移或力量于压印模仁,使得该压印模仁的压印面变形凸出,压印面中心区域与基板上的阻剂胶接触,进一步缩短硬质背板与基板间的相对距离,基于该软性模仁中心有较厚的厚度,使压印模仁受压时会产生较大的压缩量,造成压印模仁的压印面与基板间有较大的接触压力,迫使阻剂胶充填微结构模穴,并将多余的阻剂胶5挤压向外围流动至基板边缘。
其中,该软性模仁及该压印模仁是以热固性硅胶材料、光固化性硅胶材料、橡胶材料、塑料材料浇铸成型。
其中,该软性模仁的厚度是自该软性模仁的周缘向该软性模仁中间下方逐渐增厚。
采用上述技术方案,本发明具有以下的特点与功效:
1.本发明通过模仁本体的厚度差异,在压印过程中变形时产生不同的应力与应变,于模仁本体与基板间形成中央强、周围弱的接触压力分布,迫使阻剂胶自基板中央往外流动,达到均匀涂布的目的,解决传统旋转涂布浪费胶材的缺点。
2.本发明透过模仁本体的厚度差异,可在压印过程中透过施加位移或力量于模仁本体时,控制模仁本体的变形量,进而达成在压印过程中的接触压力控制,达到压印结果的微结构高度均匀,底层残余厚度最小的目的。
3.本发明透过模仁本体的厚度差异,而于脱模时控制模仁本体的变形量,以改善过去因拔模角度过大或急遽的压力释放造成的缺陷问题。
附图说明
图1为本发明具厚度变化的可挠式模仁的侧面示意图;
图2为本发明具厚度变化的可挠式模仁的使用状态示意图(一);
图3为本发明具厚度变化的可挠式模仁的使用状态示意图(二);
图4为本发明具厚度变化的可挠式模仁的使用状态示意图(三);
图5为本发明具厚度变化的可挠式模仁另一实施例的侧面示意图;
图6为本发明具厚度变化的可挠式模仁另一实施例的使用状态示意图(一);
图7为本发明具厚度变化的可挠式模仁另一实施例的使用状态示意图(二)。
符号说明
1模仁本体
11压印面
12压印模仁
13软性模仁
2金属环
3硬质背板
4基板
5阻剂胶
具体实施方式
以下将描述具体的实施例以说明本创作的实施态样,惟其并非用以限制本发明所欲保护的范畴。
请参阅图1~4,是为本发明具厚度变化的可挠性模仁的第一实施例,本实施例中,本发明具厚度变化的可挠性模仁的模仁本体1是将一具微结构的硅晶圆模具(图中未示)以及一具曲面的不锈钢模具(图中未示)结合,以热固性硅胶材料浇铸成型方式所制作而成,该模仁本体1的底面为具有奈米压印的微结构的压印面11,该模仁本体1的厚度是自该模仁本体1的周缘向该模仁本体中间上方逐渐增厚。
本发明具厚度变化的可挠性模的模仁本体1周缘主要是以一金属环2夹持固定,接着于模仁本体1上表面以一硬质背板3施加一力量或位移,使得该模仁本体1的压印面11变形凸出,压印面11中心区域与基板4上的阻剂胶5接触。接着进一步缩短硬质背板与基板间的相对距离,由于该模仁本体1中心有较厚的厚度,受到硬质背板3与基板4挤压时会产生较大的压缩量,造成该模仁本体1的压印面11与基板4间有较大的接触压力,迫使阻剂胶5充填微结构模穴,并将多余的阻剂胶5挤压向外围流动至基板4边缘。
在压印过程中,通过硬质背板3与基板4接近的速度与位移量,达到控制接触压力分布的效果。接着以紫外光照射或加热方式使阻剂胶5固化,完成微结构奈米压印成型流程。最后,通过脱模过程中控制硬质背板3与基板4远离的速度与位移量,达到控制拔模角度与分离速度,可有效避免习知技术脱模时,因力量急遽释放造成微结构断裂产生的缺陷。
请参阅图5~7,是为本发明具厚度变化的可挠性模仁的第二实施例,本实施例中,本发明具厚度变化的可挠性模仁的模仁本体1包含一压印模仁12及一软性模仁13,该压印模仁12下表面为具有奈米压印的微结构的压印面11,该软性模仁13是为一自周缘向中间逐渐增厚的弹性体,该软性模仁13的厚度是自该软性模仁13的周缘向该软性模仁13中间下方逐渐增厚。
本实施例主要是以金属环2夹持固定该压印模仁12的周缘,接着将软性模仁13与硬质背板3结合,并施加位移或力量于压印模仁12,使得该压印模仁12的压印面11变形凸出,压印面11中心区域与基板4上的阻剂胶5接触。接着进一步缩短硬质背板3与基板4间的相对距离,由于该软性模仁13中心有较厚的厚度,因此压印模仁12受压时会产生较大的压缩量,造成压印模仁13的压印面11与基板4间有较大的接触压力,迫使阻剂胶5充填微结构模穴,并将多余的阻剂胶5挤压向外围流动至基板4边缘。
由上所述,本发明具厚度变化的可挠性模仁相较习知技术,更具有以下的特点与功效:
1.本发明通过模仁本体的厚度差异,在压印过程中变形时产生不同的应力与应变,于模仁本体与基板间形成中央强、周围弱的接触压力分布,迫使阻剂胶自基板中央往外流动,达到均匀涂布的目的,解决传统旋转涂布浪费胶材的缺点。
2.本发明透过模仁本体的厚度差异,可在压印过程中透过施加位移或力量于模仁本体时,控制模仁本体的变形量,进而达成在压印过程中的接触压力控制,达到压印结果的微结构高度均匀,底层残余厚度最小的目的。
3.本发明透过模仁本体的厚度差异,而于脱模时控制模仁本体的变形量,以改善过去因拔模角度过大或急遽的压力释放造成的缺陷问题。
上列详细说明是针对本发明的一可行实施例的具体说明,惟该实施例并非用以限制本发明的专利范围,凡未脱离本发明技艺精神所为的等效实施或变更,均应包含于本案的专利范围中。
Claims (7)
1.一种采用具厚度变化的可挠式模仁的压印方法,其特征在于,该可挠式模仁包括一模仁本体,该模仁本体的厚度是自该模仁本体的周缘向该模仁本体中间上方逐渐增厚,且该模仁本体的底面具有奈米压印的微结构;
该压印方法为于该模仁本体上表面以一硬质背板施加一力量或位移,使得该模仁本体的压印面变形凸出,压印面中心区域与基板上的阻剂胶接触,通过进一步缩短硬质背板与基板间的相对距离,基于该模仁本体中心有较厚的厚度,受到硬质背板与基板挤压时会产生较大的压缩量,造成该模仁本体的压印面与基板间有较大的接触压力,迫使阻剂胶充填微结构模穴,并将多余的阻剂胶挤压向外围流动至基板边缘。
2.如权利要求1所述的采用具厚度变化的可挠式模仁的压印方法,其特征在于:接着以紫外光照射或加热方式使阻剂胶固化,完成微结构奈米压印成型流程。
3.如权利要求1所述的采用具厚度变化的可挠式模仁的压印方法,其特征在于:该模仁本体是以热固性硅胶材料、光固化性硅胶材料、橡胶材料、塑料材料浇铸成型。
4.如权利要求1所述的采用具厚度变化的可挠式模仁的压印方法,其特征在于:该模仁本体的周缘用金属环夹持固定。
5.一种采用具厚度变化的可挠式模仁的压印方法,其特征在于,该可挠式模仁包括:一模仁本体,该模仁本体包含:
一压印模仁,该压印模仁下表面具有奈米压印的微结构;
一软性模仁,该软性模仁是一厚度自该软性模仁的周缘向该软性模仁的中间下方逐渐增厚的弹性体,该软性模仁是用以自该压印模仁上表面向该压印模仁施压;
该压印方法为将软性模仁与硬质背板结合,并施加位移或力量于压印模仁,使得该压印模仁的压印面变形凸出,压印面中心区域与基板上的阻剂胶接触,进一步缩短硬质背板与基板间的相对距离,基于该软性模仁中心有较厚的厚度,使压印模仁受压时会产生较大的压缩量,造成压印模仁的压印面与基板间有较大的接触压力,迫使阻剂胶充填微结构模穴,并将多余的阻剂胶挤压向外围流动至基板边缘。
6.如权利要求5所述的采用具厚度变化的可挠式模仁的压印方法,其特征在于:该软性模仁及该压印模仁是以热固性硅胶材料、光固化性硅胶材料、橡胶材料、塑料材料浇铸成型。
7.如权利要求5所述的采用具厚度变化的可挠式模仁的压印方法,其特征在于:该压印模仁的周缘用金属环夹持固定。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110555887.0A CN113238456B (zh) | 2016-08-25 | 2017-08-11 | 一种采用具厚度变化的可挠式模仁的压印方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105127611A TWI672212B (zh) | 2016-08-25 | 2016-08-25 | 奈米壓印組合體及其壓印方法 |
CN202110555887.0A CN113238456B (zh) | 2016-08-25 | 2017-08-11 | 一种采用具厚度变化的可挠式模仁的压印方法 |
CN201710684792.2A CN107783370A (zh) | 2016-08-25 | 2017-08-11 | 具厚度变化的可挠式模仁 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710684792.2A Division CN107783370A (zh) | 2016-08-25 | 2017-08-11 | 具厚度变化的可挠式模仁 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113238456A CN113238456A (zh) | 2021-08-10 |
CN113238456B true CN113238456B (zh) | 2024-02-20 |
Family
ID=61240320
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710684792.2A Pending CN107783370A (zh) | 2016-08-25 | 2017-08-11 | 具厚度变化的可挠式模仁 |
CN202110555887.0A Active CN113238456B (zh) | 2016-08-25 | 2017-08-11 | 一种采用具厚度变化的可挠式模仁的压印方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710684792.2A Pending CN107783370A (zh) | 2016-08-25 | 2017-08-11 | 具厚度变化的可挠式模仁 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20180056577A1 (zh) |
CN (2) | CN107783370A (zh) |
TW (1) | TWI672212B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109240040B (zh) * | 2018-11-16 | 2021-10-19 | 京东方科技集团股份有限公司 | 压印模板和压印方法 |
DE112019005871B4 (de) * | 2018-11-26 | 2023-10-12 | Edge Embossing, Inc. | Thermoplastische Formanordnung |
TWI728489B (zh) * | 2019-10-04 | 2021-05-21 | 永嘉光電股份有限公司 | 利用可溶解性模仁的壓印方法及相關壓印系統 |
TWI758185B (zh) * | 2021-05-12 | 2022-03-11 | 永嘉光電股份有限公司 | 提升脫模穩定性之壓印方法及相關壓印系統 |
KR102523787B1 (ko) * | 2022-02-03 | 2023-04-21 | 주식회사피에스디이 | 기포 문제를 해결하기 위한 임프린팅 장치 및 임프린팅 방법 |
Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997006012A1 (en) * | 1995-08-04 | 1997-02-20 | International Business Machines Corporation | Stamp for a lithographic process |
EP1072954A2 (en) * | 1999-07-28 | 2001-01-31 | Lucent Technologies Inc. | Lithographic process for device fabrication |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
KR100699092B1 (ko) * | 2005-11-22 | 2007-03-23 | 삼성전자주식회사 | 패턴형성방법과 패턴형성장치 |
CN101004551A (zh) * | 2006-01-18 | 2007-07-25 | Tdk株式会社 | 压模、凹凸图案形成方法和信息记录介质制造方法 |
TW200741337A (en) * | 2006-04-21 | 2007-11-01 | Univ Nat Cheng Kung | Method for imprinting 3-D circuit patterns on curved surface |
CN101316693A (zh) * | 2005-12-01 | 2008-12-03 | 分子制模股份有限公司 | 用于将模具与固化压印材料分开的技术 |
TW200848922A (en) * | 2007-06-01 | 2008-12-16 | Univ Nat Cheng Kung | Nano-imprinting process |
CN101394989A (zh) * | 2006-03-03 | 2009-03-25 | 日本先锋公司 | 压印用模具和压印方法 |
JP2009206519A (ja) * | 2009-06-01 | 2009-09-10 | Hitachi Ltd | ナノプリント用スタンパ、及び微細構造転写方法 |
JP2009214380A (ja) * | 2008-03-10 | 2009-09-24 | Fujifilm Corp | 金型の加工方法および製造方法 |
US7691313B2 (en) * | 2002-11-13 | 2010-04-06 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
CN101808808A (zh) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | 微细形状转印片的制造方法和制造装置 |
JP2013256015A (ja) * | 2012-06-11 | 2013-12-26 | Olympus Corp | 表面形状の成形方法、微細構造形成用型、および光学素子の製造方法 |
CN103620448A (zh) * | 2011-09-16 | 2014-03-05 | 奥林巴斯株式会社 | 细微结构形成用模和光学元件的制造方法 |
CN103635835A (zh) * | 2011-09-22 | 2014-03-12 | 奥林巴斯株式会社 | 光学元件的制造方法和表面加工装置 |
WO2014145360A1 (en) * | 2013-03-15 | 2014-09-18 | Nanonex Corporation | Imprint lithography system and method for manufacturing |
CN104335082A (zh) * | 2012-06-08 | 2015-02-04 | 株式会社日立高新技术 | 曲面衍射光栅的制造方法、曲面衍射光栅的模具以及使用该曲面衍射光栅的模具的曲面衍射光栅 |
JP2015050443A (ja) * | 2013-09-05 | 2015-03-16 | 株式会社日立エルジーデータストレージ | 微細構造転写装置 |
TW201524737A (zh) * | 2013-12-16 | 2015-07-01 | Cello Technology Co Ltd | 奈米壓印之完整脫模方法 |
CN104937697A (zh) * | 2013-08-01 | 2015-09-23 | Lg化学株式会社 | 曝光装置 |
TWM517679U (zh) * | 2015-07-31 | 2016-02-21 | Yung-Jin Weng | 超臨界奈米流體低溫綠能轉印複製系統裝置 |
WO2017160658A1 (en) * | 2016-03-14 | 2017-09-21 | The Regents Of The University Of California | Fabrication of nano-structures on multiple sides of a non-planar surface |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4506184A (en) * | 1984-01-10 | 1985-03-19 | Varian Associates, Inc. | Deformable chuck driven by piezoelectric means |
CH664030A5 (de) * | 1984-07-06 | 1988-01-29 | Landis & Gyr Ag | Verfahren zur erzeugung eines makroskopischen flaechenmusters mit einer mikroskopischen struktur, insbesondere einer beugungsoptisch wirksamen struktur. |
US6809802B1 (en) * | 1999-08-19 | 2004-10-26 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
US7018572B2 (en) * | 2001-06-11 | 2006-03-28 | General Electric Company | Method for producing data storage media |
US7641840B2 (en) * | 2002-11-13 | 2010-01-05 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
EP1620205A2 (en) * | 2003-04-04 | 2006-02-01 | Tecan Trading AG | Elastomeric tools for fabricating of polymeric devices and uses thereof |
JP4455093B2 (ja) * | 2004-02-20 | 2010-04-21 | キヤノン株式会社 | モールド、モールドを用いた加工装置及びモールドを用いた加工方法 |
US7363854B2 (en) * | 2004-12-16 | 2008-04-29 | Asml Holding N.V. | System and method for patterning both sides of a substrate utilizing imprint lithography |
US7798801B2 (en) * | 2005-01-31 | 2010-09-21 | Molecular Imprints, Inc. | Chucking system for nano-manufacturing |
US20060177535A1 (en) * | 2005-02-04 | 2006-08-10 | Molecular Imprints, Inc. | Imprint lithography template to facilitate control of liquid movement |
US20060177532A1 (en) * | 2005-02-04 | 2006-08-10 | Molecular Imprints, Inc. | Imprint lithography method to control extrusion of a liquid from a desired region on a substrate |
US7329115B2 (en) * | 2005-02-18 | 2008-02-12 | Hewlett-Packard Development Company, L.P. | Patterning nanoline arrays with spatially varying pitch |
US7291282B2 (en) * | 2005-03-01 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating a mold for imprinting a structure |
US7906058B2 (en) * | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7517211B2 (en) * | 2005-12-21 | 2009-04-14 | Asml Netherlands B.V. | Imprint lithography |
US8215946B2 (en) * | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
JP4996488B2 (ja) * | 2007-03-08 | 2012-08-08 | 東芝機械株式会社 | 微細パターン形成方法 |
JP5002422B2 (ja) * | 2007-11-14 | 2012-08-15 | 株式会社日立ハイテクノロジーズ | ナノプリント用樹脂スタンパ |
JP4815464B2 (ja) * | 2008-03-31 | 2011-11-16 | 株式会社日立製作所 | 微細構造転写スタンパ及び微細構造転写装置 |
JP5117318B2 (ja) * | 2008-08-07 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | ナノインプリント用スタンパ及び該スタンパを使用する微細構造転写装置 |
JP4609562B2 (ja) * | 2008-09-10 | 2011-01-12 | 日立電線株式会社 | 微細構造転写用スタンパ及びその製造方法 |
US8652393B2 (en) * | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
KR101363783B1 (ko) * | 2008-11-14 | 2014-02-17 | 엘지디스플레이 주식회사 | 임프린팅용 감광성 수지 조성물 및 기판 상에 유기막을 형성하는 방법 |
CN104162947B (zh) * | 2008-12-05 | 2017-04-12 | 流体科技公司 | 产生有图案的材料的方法 |
EP2483744B1 (en) * | 2009-10-02 | 2016-03-30 | Danmarks Tekniske Universitet | Injection molding tools with micro/nano-meter pattern |
US20120292820A1 (en) * | 2009-11-02 | 2012-11-22 | Nil Technology Aps | Method and device for nanoimprint lithography |
JP5469041B2 (ja) * | 2010-03-08 | 2014-04-09 | 株式会社日立ハイテクノロジーズ | 微細構造転写方法およびその装置 |
US20110305787A1 (en) * | 2010-06-11 | 2011-12-15 | Satoshi Ishii | Stamper for transfer of microscopic structure and transfer apparatus of microscopic structure |
CA2804059A1 (en) * | 2010-07-01 | 2012-01-05 | Inmold Biosystems A/S | Method and apparatus for producing a nanostructured or smooth polymer article |
TWI400160B (zh) * | 2010-11-18 | 2013-07-01 | Univ Nat Taiwan Science Tech | 應用於微奈米壓印製程之模具 |
JP2012190877A (ja) * | 2011-03-09 | 2012-10-04 | Fujifilm Corp | ナノインプリント方法およびそれに用いられるナノインプリント装置 |
US9149958B2 (en) * | 2011-11-14 | 2015-10-06 | Massachusetts Institute Of Technology | Stamp for microcontact printing |
JP2013118233A (ja) * | 2011-12-02 | 2013-06-13 | Hitachi High-Technologies Corp | 微細構造転写装置 |
EP2979845A1 (en) * | 2012-05-08 | 2016-02-03 | Asahi Kasei E-materials Corporation | Transfer method and thermal nanoimprinting apparatus |
JP6291687B2 (ja) * | 2012-08-27 | 2018-03-14 | Scivax株式会社 | インプリント装置およびインプリント方法 |
KR101986473B1 (ko) * | 2012-09-06 | 2019-06-05 | 에베 그룹 에. 탈너 게엠베하 | 구조 스탬프 및 구조 스탬프를 엠보싱하기 위한 장치 및 방법 |
KR20160130280A (ko) * | 2014-04-08 | 2016-11-10 | 미쯔비시 레이온 가부시끼가이샤 | 몰드의 제조 방법 및 롤 형상 몰드의 제조 장치, 및 미세 요철 구조를 표면에 갖는 물품의 제조 방법 |
US10620532B2 (en) * | 2014-11-11 | 2020-04-14 | Canon Kabushiki Kaisha | Imprint method, imprint apparatus, mold, and article manufacturing method |
JP6489309B2 (ja) * | 2015-05-14 | 2019-03-27 | パナソニックIpマネジメント株式会社 | インプリント方法およびインプリント装置 |
JP6924006B2 (ja) * | 2016-05-09 | 2021-08-25 | デクセリアルズ株式会社 | レプリカ原盤の製造方法、および被形成体の製造方法 |
CN109600996B (zh) * | 2016-07-27 | 2021-11-30 | 皇家飞利浦有限公司 | 基于聚有机硅氧烷的印模、其制造方法、其用于印刷工艺的用途以及利用其的压印方法 |
-
2016
- 2016-08-25 TW TW105127611A patent/TWI672212B/zh active
-
2017
- 2017-08-11 CN CN201710684792.2A patent/CN107783370A/zh active Pending
- 2017-08-11 CN CN202110555887.0A patent/CN113238456B/zh active Active
- 2017-08-24 US US15/685,793 patent/US20180056577A1/en not_active Abandoned
-
2020
- 2020-12-10 US US17/117,760 patent/US20210101316A1/en not_active Abandoned
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5817242A (en) * | 1995-08-04 | 1998-10-06 | International Business Machines Corporation | Stamp for a lithographic process |
WO1997006012A1 (en) * | 1995-08-04 | 1997-02-20 | International Business Machines Corporation | Stamp for a lithographic process |
EP1072954A2 (en) * | 1999-07-28 | 2001-01-31 | Lucent Technologies Inc. | Lithographic process for device fabrication |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US7691313B2 (en) * | 2002-11-13 | 2010-04-06 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
KR100699092B1 (ko) * | 2005-11-22 | 2007-03-23 | 삼성전자주식회사 | 패턴형성방법과 패턴형성장치 |
CN101316693A (zh) * | 2005-12-01 | 2008-12-03 | 分子制模股份有限公司 | 用于将模具与固化压印材料分开的技术 |
CN101004551A (zh) * | 2006-01-18 | 2007-07-25 | Tdk株式会社 | 压模、凹凸图案形成方法和信息记录介质制造方法 |
CN101394989A (zh) * | 2006-03-03 | 2009-03-25 | 日本先锋公司 | 压印用模具和压印方法 |
TW200741337A (en) * | 2006-04-21 | 2007-11-01 | Univ Nat Cheng Kung | Method for imprinting 3-D circuit patterns on curved surface |
TW200848922A (en) * | 2007-06-01 | 2008-12-16 | Univ Nat Cheng Kung | Nano-imprinting process |
CN101808808A (zh) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | 微细形状转印片的制造方法和制造装置 |
JP2009214380A (ja) * | 2008-03-10 | 2009-09-24 | Fujifilm Corp | 金型の加工方法および製造方法 |
JP2009206519A (ja) * | 2009-06-01 | 2009-09-10 | Hitachi Ltd | ナノプリント用スタンパ、及び微細構造転写方法 |
CN103620448A (zh) * | 2011-09-16 | 2014-03-05 | 奥林巴斯株式会社 | 细微结构形成用模和光学元件的制造方法 |
CN103635835A (zh) * | 2011-09-22 | 2014-03-12 | 奥林巴斯株式会社 | 光学元件的制造方法和表面加工装置 |
CN104335082A (zh) * | 2012-06-08 | 2015-02-04 | 株式会社日立高新技术 | 曲面衍射光栅的制造方法、曲面衍射光栅的模具以及使用该曲面衍射光栅的模具的曲面衍射光栅 |
JP2013256015A (ja) * | 2012-06-11 | 2013-12-26 | Olympus Corp | 表面形状の成形方法、微細構造形成用型、および光学素子の製造方法 |
WO2014145360A1 (en) * | 2013-03-15 | 2014-09-18 | Nanonex Corporation | Imprint lithography system and method for manufacturing |
CN104937697A (zh) * | 2013-08-01 | 2015-09-23 | Lg化学株式会社 | 曝光装置 |
JP2015050443A (ja) * | 2013-09-05 | 2015-03-16 | 株式会社日立エルジーデータストレージ | 微細構造転写装置 |
TW201524737A (zh) * | 2013-12-16 | 2015-07-01 | Cello Technology Co Ltd | 奈米壓印之完整脫模方法 |
TWM517679U (zh) * | 2015-07-31 | 2016-02-21 | Yung-Jin Weng | 超臨界奈米流體低溫綠能轉印複製系統裝置 |
WO2017160658A1 (en) * | 2016-03-14 | 2017-09-21 | The Regents Of The University Of California | Fabrication of nano-structures on multiple sides of a non-planar surface |
Non-Patent Citations (1)
Title |
---|
Yung-Chun Lee 等.Droplet spreading nanoimprinting method for micro-/nano-fabrication,ISI,Yung-chun Lee imprint mold thickness.Journal of Micromechanics and Microengineering.2020,1-8. * |
Also Published As
Publication number | Publication date |
---|---|
TWI672212B (zh) | 2019-09-21 |
CN107783370A (zh) | 2018-03-09 |
TW201806724A (zh) | 2018-03-01 |
US20210101316A1 (en) | 2021-04-08 |
CN113238456A (zh) | 2021-08-10 |
US20180056577A1 (en) | 2018-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113238456B (zh) | 一种采用具厚度变化的可挠式模仁的压印方法 | |
JP5276436B2 (ja) | 中間スタンプによるパターン複製 | |
JP5411557B2 (ja) | 微細構造転写装置 | |
CN101036086B (zh) | 挠性纳米压印模板 | |
CN102566262B (zh) | 一种适用于非平整衬底晶圆级纳米压印的装置 | |
JP2008542081A5 (zh) | ||
TW201020098A (en) | Precise press apparatus and press load control method therein | |
WO2016051928A1 (ja) | インプリント用テンプレート及びその製造方法 | |
EP2138896B1 (en) | Nano imprinting method and apparatus | |
Deshmukh et al. | Current innovations in roller embossing—A comprehensive review | |
Zhong et al. | Hot roller embossing of multi-dimensional microstructures using elastomeric molds | |
KR100934239B1 (ko) | 임프린트용 대면적 스탬프 제작방법 | |
US9149958B2 (en) | Stamp for microcontact printing | |
KR100504080B1 (ko) | 선택적 부가압력을 이용한 uv 나노임프린트 리소그래피공정 | |
CN108957949A (zh) | 一种纳米压印方法 | |
KR102523787B1 (ko) | 기포 문제를 해결하기 위한 임프린팅 장치 및 임프린팅 방법 | |
CN114035404A (zh) | 一种纳米压印模具的制作方法 | |
CN101702077A (zh) | 凹模热压印中应用光刻胶整形改善填充和减少残胶的方法 | |
CN208013664U (zh) | 一种二维辅助振动的压印装置 | |
TW200919095A (en) | Magnetic conductivity molding plate with creative multiple structural form | |
TWI448396B (zh) | 壓印裝置 | |
JP2006095901A (ja) | プラスチック成形方法、プラスチック成形装置及び成形金型 | |
WO2020036173A1 (ja) | 微細構造体製造方法 | |
Shu et al. | Fabrication Large-scale Diffractive Lens Arrays on Chalcogenide Glass by Means of Step-and-Repeat Hot Imprinting and Non-Isothermal Glass Molding | |
TWI402163B (zh) | 光學元件之製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |