CN113228324A - 层叠体的制造方法和钙钛矿型太阳能电池的制造方法 - Google Patents
层叠体的制造方法和钙钛矿型太阳能电池的制造方法 Download PDFInfo
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- CN113228324A CN113228324A CN201980081298.4A CN201980081298A CN113228324A CN 113228324 A CN113228324 A CN 113228324A CN 201980081298 A CN201980081298 A CN 201980081298A CN 113228324 A CN113228324 A CN 113228324A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 230000010287 polarization Effects 0.000 claims abstract description 10
- 230000005525 hole transport Effects 0.000 claims description 18
- RXCBCUJUGULOGC-UHFFFAOYSA-H dipotassium;tetrafluorotitanium;difluoride Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[K+].[K+].[Ti+4] RXCBCUJUGULOGC-UHFFFAOYSA-H 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- AIFLGMNWQFPTAJ-UHFFFAOYSA-J 2-hydroxypropanoate;titanium(4+) Chemical compound [Ti+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O AIFLGMNWQFPTAJ-UHFFFAOYSA-J 0.000 claims description 3
- MRSOZKFBMQILFT-UHFFFAOYSA-L diazanium;oxalate;titanium(2+) Chemical compound [NH4+].[NH4+].[Ti+2].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O MRSOZKFBMQILFT-UHFFFAOYSA-L 0.000 claims description 3
- GNRMKQMKBAJVLN-UHFFFAOYSA-J dipotassium;oxalate;oxygen(2-);titanium(4+);dihydrate Chemical compound O.O.[O-2].[K+].[K+].[Ti+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O GNRMKQMKBAJVLN-UHFFFAOYSA-J 0.000 claims description 3
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 claims description 3
- 229910000348 titanium sulfate Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 23
- 239000011521 glass Substances 0.000 description 18
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 11
- 238000001035 drying Methods 0.000 description 9
- -1 ammonium metal halides Chemical class 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910001507 metal halide Inorganic materials 0.000 description 6
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- YOYLLRBMGQRFTN-SMCOLXIQSA-N norbuprenorphine Chemical compound C([C@@H](NCC1)[C@]23CC[C@]4([C@H](C3)C(C)(O)C(C)(C)C)OC)C3=CC=C(O)C5=C3[C@@]21[C@H]4O5 YOYLLRBMGQRFTN-SMCOLXIQSA-N 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K Indium trichloride Inorganic materials Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZERULLAPCVRMCO-UHFFFAOYSA-N Dipropyl sulfide Chemical compound CCCSCCC ZERULLAPCVRMCO-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001439 antimony ion Inorganic materials 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- NMGYKLMMQCTUGI-UHFFFAOYSA-J diazanium;titanium(4+);hexafluoride Chemical compound [NH4+].[NH4+].[F-].[F-].[F-].[F-].[F-].[F-].[Ti+4] NMGYKLMMQCTUGI-UHFFFAOYSA-J 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 description 2
- 235000011151 potassium sulphates Nutrition 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical class [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000004502 linear sweep voltammetry Methods 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
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Abstract
本发明提供制造成为依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池的透光性电极层和电子传输层的层叠体的新方法。所述方法中,在含有Ti成分的处理液中,对成为所述透光性电极层的构件进行阴极极化,由此在所述构件上形成成为所述电子传输层的氧化钛层。
Description
技术领域
本发明涉及层叠体的制造方法和钙钛矿型太阳能电池的制造方法。
背景技术
以往已知有钙钛矿型太阳能电池(参考专利文献1)。
钙钛矿型太阳能电池例如依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层。
现有技术文献
专利文献
专利文献1:日本特开2015-56430号公报
发明内容
发明所要解决的问题
如上所述,钙钛矿型太阳能电池例如依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层。
本发明的目的在于提供制造成为这样的钙钛矿型太阳能电池的透光性电极层和电子传输层的层叠体的新方法。
用于解决问题的方法
本发明人进行了深入研究,结果发现,通过采用下述构成,可实现上述目的,从而完成了本发明。
即,本发明提供以下的[1]~[5]。
[1]一种层叠体的制造方法,其是制造成为依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池的上述透光性电极层和上述电子传输层的层叠体的方法,其中,在含有Ti成分的处理液中,对成为上述透光性电极层的构件进行阴极极化,由此在上述构件上形成成为上述电子传输层的氧化钛层。
[2]如上述[1]所述的层叠体的制造方法,其中,上述处理液中的Ti含量为0.004mol/L以上且1.300mol/L以下。
[3]如上述[1]或[2]所述的层叠体的制造方法,其中,上述Ti成分为选自由六氟钛酸、六氟钛酸钾、六氟钛酸钠、六氟钛酸铵、草酸氧钛铵、草酸氧钛钾二水合物、硫酸钛和乳酸钛组成的组中的至少一种。
[4]如上述[1]~[3]中任一项所述的层叠体的制造方法,其中,将成为上述透光性电极层的构件作为阴极,以0.01A/dm2以上且小于1.00A/dm2的电流密度进行通电。
[5]一种钙钛矿型太阳能电池的制造方法,其中,使用通过上述[1]~[4]中任一项所述的层叠体的制造方法得到的层叠体来制造依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池。
发明效果
根据本发明,能够提供制造成为钙钛矿型太阳能电池的透光性电极层和电子传输层的层叠体的新方法。
具体实施方式
[钙钛矿型太阳能电池]
首先,对钙钛矿型太阳能电池进行说明。
钙钛矿型太阳能电池例如依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层。
各层的厚度等可适当设定。
作为透光性电极层,可以列举例如ITO(Indium Tin Oxide,氧化铟锡)膜、FTO(Fluorine-doped Tin Oxide,氟掺杂氧化锡)膜等导电性金属氧化物的膜。透光性电极层可以配置在玻璃基板、树脂膜等透明性基板上。
作为电子传输层,可以列举例如含有作为n型半导体的氧化钛(TiO2)的氧化钛层。
作为钙钛矿晶体层,可以列举例如含有掺杂有金属离子的1~4取代或无取代铵金属卤化物的层。
作为构成1~4取代或无取代铵金属卤化物的金属,从构成钙钛矿结构、能够掺杂的观点考虑,可以列举例如属于周期表的11~15族的金属,优选为铅、铟、锌、锡、银、锑、铜,更优选为铅、锡,进一步优选为铅。
作为构成1~4取代或无取代铵金属卤化物的卤素,优选为碘、氯、溴,更优选为碘。
作为这样的1~4取代或无取代铵金属卤化物,可以列举例如(CH3NH3)PbI3、(C6H5C2H4NH3)2PbI4、(C10H7CH2NH3)2PbI4、(C6H13NH3)2PbI4等一取代铵铅卤化物,优选为(CH3NH3)PbI3。
作为掺杂到1~4取代或无取代铵金属卤化物中的金属离子,可以列举例如属于周期表的11~15族的金属的离子,优选为铟离子、锌离子、锡离子、银离子、锑离子、铜离子等,更优选为铟离子、锑离子等。
金属的掺杂量相对于构成1~4取代或无取代铵金属卤化物的金属1摩尔优选为0.01~0.5摩尔,更优选为0.05~0.2摩尔。
作为空穴传输层的材料,可以列举例如:碘化铜(CuI)等碘化物、层状钴氧化物等钴络合物、CuSCN、氧化钼、氧化镍、4CuBr·3S(C4H9)、有机空穴传输材料等。
作为集电极层,可以列举例如Au电极层、Ag电极层、Al电极层、Ca电极层等,其中,优选为Au电极层。
[层叠体的制造方法]
本发明的层叠体的制造方法概略而言是制造成为上述钙钛矿型太阳能电池的透光性电极层和电子传输层的层叠体的方法。
更详细而言,在含有Ti成分的处理液中,对成为透光性电极层的构件进行阴极极化。即,将成为透光性电极层的构件作为阴极进行通电。由此,在成为透光性电极层的构件上形成成为电子传输层的氧化钛层。需要说明的是,作为对电极,铂电极等不溶性电极是适合的。
推测氧化钛层以如下方式形成。首先,在成为透光性电极层的构件的表面,伴随氢产生而发生pH上升。其结果是,例如,在处理液中的Ti成分为六氟钛酸和/或其盐的情况下,处理液中的六氟钛酸根离子发生脱F,同时生成氢氧化钛。认为该氢氧化钛附着于成为透光性电极层的构件的表面,经过之后的清洗、干燥等所引起的脱水缩合,形成氧化钛层。但是,即使是上述以外的机制,也在本发明的范围内。
成为透光性电极层的构件优选为具有导电性的构件,例如为ITO膜、FTO膜等导电性金属氧化物的膜。
成为透光性电极层的构件可以配置在玻璃基板、树脂膜等透明性基板上。这种情况下,对带有成为透光性电极层的构件的透明性基板(例如带有FTO膜的玻璃基板)进行阴极极化。这种情况下,所得到的层叠体也进一步具有该透明性基板。
处理液含有用于向所形成的氧化钛层供给Ti(钛元素)的Ti成分(Ti化合物)。
作为Ti成分,优选为选自由六氟钛酸(H2TiF6)、六氟钛酸钾(K2TiF6)、六氟钛酸钠(Na2TiF6)、六氟钛酸铵((NH4)2TiF6)、草酸氧钛铵((NH4)2[TiO(C2O4)2])、草酸氧钛钾二水合物(K2[TiO(C2O4)2]·2H2O)、硫酸钛(Ti(SO4)2)和乳酸钛(Ti(OH)2[OCH(CH3)COOH]2)组成的组中的至少一种。
其中,从处理液的稳定性、获得的容易性等观点考虑,优选为六氟钛酸和/或其盐(六氟钛酸钾、六氟钛酸钠、六氟钛酸铵)。
处理液中的Ti含量优选为0.004mol/L以上,更优选为0.010mol/L以上,进一步优选为0.020mol/L以上。
另一方面,处理液中的Ti含量优选为1.300mol/L以下,更优选为1.000mol/L以下,进一步优选为0.700mol/L以下,特别优选为0.300mol/L以下,最优选为0.150mol/L以下。
作为处理液的溶剂,可以使用水。
处理液的pH没有特别限定,例如为pH2.0~5.0。pH的调节可以使用公知的酸成分(例如磷酸、硫酸等)或碱成分(例如氢氧化钠、氨水等)。
处理液中,可以根据需要含有月桂基硫酸钠、炔二醇等表面活性剂。从附着行为的经时稳定性的观点考虑,处理液中可以含有焦磷酸盐等缩合磷酸盐。
处理液的液温优选为20~80℃,更优选为40~60℃。
处理液可以进一步含有传导助剂。
作为传导助剂,可以列举例如:硫酸钾、硫酸钠、硫酸镁、硫酸钙等硫酸盐;硝酸钾、硝酸钠、硝酸镁、硝酸钙等硝酸盐;氯化钾、氯化钠、氯化镁、氯化钙等氯盐;等。
处理液中的传导助剂的含量优选为0.010~1.000mol/L,更优选为0.020~0.500mol/L。
实施阴极极化时的电流密度优选为0.01A/dm2以上,更优选为0.10A/dm2以上,进一步优选为0.20A/dm2以上。
另一方面,实施阴极极化时的电流密度优选小于1.00A/dm2,更优选为0.80A/dm2以下,进一步优选为0.60A/dm2以下。
通电时间可适当设定,例如为5~60秒,优选为10~40秒。
在阴极极化后,可以实施水洗。
水洗的方法没有特别限定,可以列举例如在阴极极化后浸渍在水中的方法等。水洗中使用的水的温度(水温)优选为40~90℃。
水洗时间优选超过0.5秒,优选为1.0~5.0秒。
此外,可以进行干燥来代替水洗,或者在水洗后进行干燥。干燥时的温度和方式没有特别限定,例如,可以应用通常的使用干燥器或电炉的干燥方式。干燥温度优选为100℃以下。
[钙钛矿型太阳能电池的制造方法]
本发明的钙钛矿型太阳能电池的制造方法是使用通过上述本发明的层叠体的制造方法得到的层叠体来制造依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池的方法。
例如,在通过本发明的层叠体的制造方法得到的层叠体中的成为电子传输层的氧化钛层上依次形成成为钙钛矿晶体层、空穴传输层和集电极层的层。
在钙钛矿晶体层为例如含有掺杂有In离子的(CH3NH3)PbI3的层的情况下,首先,将PbI2和InCl3以使Pb与In的摩尔比为期望的掺杂量的方式进行混合,将所得到的混合溶液通过旋涂法等在成为电子传输层的氧化钛层上进行成膜,并干燥。接着,在CH3NH3I的溶液中浸渍,并干燥。作为混合溶液和溶液的溶剂,可以列举例如γ-丁内酯、N-甲基-2-吡咯烷酮、N,N-二甲基甲酰胺、异丙醇等极性溶剂。干燥和浸渍的温度和时间等可适当设定。
空穴传输层例如可以通过重复进行在钙钛矿晶体层上滴加空穴传输层的材料的溶液并使表面平整的操作来形成。作为溶液的溶剂,可以列举例如正丙基硫醚等有机溶剂。
集电极层例如可以通过在空穴传输层上蒸镀Au等金属来形成。
形成各层的方法不限于这些方法,可以适当使用以往公知的方法。
[实施例]
以下,列举实施例对本发明具体地进行说明。但是,本发明不限于此。
<成为透光性电极层的构件的准备>
准备通过溅射在玻璃基板(30mm×35mm、厚度0.7mm)的一个面上层叠了FTO(氟掺杂氧化锡)膜的带有FTO膜的玻璃基板(Ideal Star公司制造)。将该带有FTO膜的玻璃基板作为带有成为透光性电极层的构件的透明性基板使用。
<成为透光性电极层和电子传输层的层叠体的制作>
使用准备的带有FTO膜的玻璃基板(带有成为透光性电极层的构件的透明性基板),如下制作成为透光性电极层和电子传输层的层叠体。
首先,制备含有0.040mol/L的六氟钛酸钾(K2TiF6)和0.10mol/L的硫酸钾(K2SO4)并利用氢氧化钾将pH调节至4.0的处理液(以下简记为“处理液”)。
接着,将准备的带有FTO膜的玻璃基板浸渍在将Semiclean M4(横滨油脂工业公司制造)用离子交换水稀释20倍后的清洗液中,进行10分钟的超声波清洗。然后,将带有FTO膜的玻璃基板从清洗液中取出,浸渍在离子交换水中,进行10分钟的超声波清洗。
将清洗后的带有FTO膜的玻璃基板浸渍在所制备的处理液(液温:50℃)中。在处理液中,将带有FTO膜的玻璃基板在电流密度0.40A/dm2、通电时间20秒的条件下进行阴极极化。然后,在25℃的水槽中浸渍2.0秒而进行水洗后,使用鼓风机在室温下干燥。由此,在带有FTO膜的玻璃基板的FTO膜上以约50nm的厚度形成成为电子传输层的氧化钛层。这样,制作出形成有氧化钛层的带有FTO膜的玻璃基板(成为透光性电极层和电子传输层的层叠体)。
<钙钛矿型太阳能电池的制作>
使用所制作的层叠体,如下制作钙钛矿型太阳能电池。
《钙钛矿晶体层的形成》
首先,制备Pb浓度调节至0.9mol/L、In浓度调节至0.1mol/L的PbI2-InCl3混合溶液。另外,制备10mg/mg的CH3NH3I的异丙醇溶液。
在室温下,在形成有氧化钛层的带有FTO膜的玻璃基板上,通过旋涂上述制备出的PbI2-InCl3混合溶液而进行成膜,在70℃下进行30分钟加热干燥,放冷,形成In掺杂PbI3层。将其在室温下在上述制备出的CH3NH3I的异丙醇溶液中浸渍20秒,然后,立即在异丙醇中浸渍1分钟以进行清洗,进一步利用旋涂机除去多余的溶液。接着,在70℃下进行30分钟加热干燥,放冷,然后,利用气雾枪除去多余的溶液。由此,在氧化钛层上形成In掺杂(CH3NH3)PbI3层(钙钛矿晶体层)。
《空穴传输层的形成》
将形成有In掺杂(CH3NH3)PbI3层和氧化钛层的带有FTO膜的玻璃基板放置在65℃的加热板上。在该状态下,在In掺杂(CH3NH3)PbI3层上滴加1滴CuSCN浓度为0.05mol/L的正丙基硫醚溶液,并用玻璃棒使表面平整,将上述操作重复30次,以0.5~2μm的厚度形成CuSCN层(空穴传输层)。
《集电极层的形成》
在CuSCN层(空穴传输层)上通过蒸镀法形成Au电极层(集电极层)。更详细而言,将与电极形状相对应的荫罩和已形成至空穴传输层的玻璃基板设置在腔室内。在达到减压后的腔室内对金线进行电阻加热,经由荫罩在空穴传输层上形成金膜。
这样,制作出在玻璃基板的一个面上依次层叠有FTO膜(透光性电极层)、氧化钛层(电子传输层)、In掺杂(CH3NH3)PbI3层(钙钛矿晶体层)、CuSCN层(空穴传输层)和Au电极层(集电极层)的钙钛矿型太阳能电池。
<钙钛矿型太阳能电池的评价>
对制作出的钙钛矿型太阳能电池进行下述评价。
使用太阳模拟光源装置(SAN-EI Electric公司制造,XES-502S),对钙钛矿型太阳能电池从FTO膜侧照射具有AM1.5G的光谱分布且具有100mW/cm2的光强度的模拟太阳光。在该状态下,使用线性扫描伏安法(LSV)测定装置(Hokuto Denko公司制造,HZ-5000)测定钙钛矿型太阳能电池的光电流-电压曲线。
由该曲线算出了短路电流(绝对值、Jsc):8.39mA/cm2、开路电压(Voc):0.540V、曲线因子(FF):0.57和能量转换效率(PCE):2.59%。
Claims (5)
1.一种层叠体的制造方法,其是制造成为依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池的所述透光性电极层和所述电子传输层的层叠体的方法,其中,
在含有Ti成分的处理液中,对成为所述透光性电极层的构件进行阴极极化,由此在所述构件上形成成为所述电子传输层的氧化钛层。
2.如权利要求1所述的层叠体的制造方法,其中,所述处理液中的Ti含量为0.004mol/L以上且1.300mol/L以下。
3.如权利要求1或2所述的层叠体的制造方法,其中,所述Ti成分为选自由六氟钛酸、六氟钛酸钾、六氟钛酸钠、六氟钛酸铵、草酸氧钛铵、草酸氧钛钾二水合物、硫酸钛和乳酸钛组成的组中的至少一种。
4.如权利要求1~3中任一项所述的层叠体的制造方法,其中,将成为所述透光性电极层的构件作为阴极,以0.01A/dm2以上且小于1.00A/dm2的电流密度进行通电。
5.一种钙钛矿型太阳能电池的制造方法,其中,使用通过权利要求1~4中任一项所述的层叠体的制造方法得到的层叠体来制造依次具有透光性电极层、电子传输层、钙钛矿晶体层、空穴传输层和集电极层的钙钛矿型太阳能电池。
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