CN113146053A - Laser processing device and laser processing method - Google Patents
Laser processing device and laser processing method Download PDFInfo
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- CN113146053A CN113146053A CN202010076526.3A CN202010076526A CN113146053A CN 113146053 A CN113146053 A CN 113146053A CN 202010076526 A CN202010076526 A CN 202010076526A CN 113146053 A CN113146053 A CN 113146053A
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- 238000012545 processing Methods 0.000 title claims abstract description 71
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000007493 shaping process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
The present application provides a laser processing apparatus and a processing method for forming a fine structure on a substrate, the laser processing apparatus including: a laser that emits laser light; an object stage for carrying a substrate; an optical system that guides laser light emitted from the laser to the substrate, thereby irradiating a plurality of light beams to the substrate; a pattern generation system for forming a processing pattern of a microstructure; and a control system that controls the laser, the stage, and the optical system according to the processing pattern.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a laser processing apparatus and a laser processing method.
Background
In the fabrication of semiconductor devices, particularly Micro Electro Mechanical Systems (MEMS) devices, it is often necessary to form various fine structures such as channels, holes, and perforations by micromachining. These fine structures may need to be processed directly on a semiconductor substrate, or may need to be processed in a thin film formed on a semiconductor substrate. The processing of these microstructures may be performed by photolithography and etching, or may be performed by direct laser processing.
Compared with a photoetching and etching mode, the laser direct processing mode has certain advantages. Firstly, the laser direct processing mode has simple device and low manufacturing cost and operation cost; the whole set of devices such as a photomask preparation device, a glue coating and developing device, an exposure device, an etching device, a photoresist removing device and the like are not needed like a photoetching and etching mode. In addition, the processed product of the laser direct processing method is a raw material of a semiconductor substrate or a thin film formed on the semiconductor substrate, and has low influence on the environment; unlike photolithography and etching, which requires the use of environmentally responsible gases or liquids, the work product is often an environmentally responsible compound. In addition, the pattern processed by the laser direct processing mode is relatively flexible and has high degree of freedom.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
The inventor of the present application finds that, compared with the photolithography and etching method, the conventional laser direct processing method has certain disadvantages, for example, when large-area processing is performed, the production efficiency is not high enough.
In order to solve the problem of low production efficiency in laser processing, embodiments of the present application provide a laser processing apparatus and a laser processing method that can process a substrate with a plurality of laser beams into a microstructure individually or simultaneously, thereby improving the production efficiency in processing the microstructure with the laser beams.
According to an aspect of an embodiment of the present application, there is provided a laser processing apparatus that forms a fine structure on a substrate, the laser processing apparatus including:
a laser that emits laser light;
an object stage for carrying a substrate;
an optical system that guides laser light emitted from the laser to the substrate, thereby irradiating a plurality of light beams to the substrate;
a pattern generation system for forming a processing pattern of a microstructure; and
a control system that controls the laser, the stage, and the optical system according to the processing pattern.
According to another aspect of the embodiments of the present application, wherein the laser has a plurality of laser light emitting sources.
According to another aspect of the embodiments of the present application, wherein the laser wavelengths of the plurality of laser light emitting sources are the same or different.
According to another aspect of an embodiment of the present application, wherein the stage moves in a plane parallel to the substrate and/or in a direction perpendicular to the plane and rotates about an axis perpendicular to the plane.
According to another aspect of the embodiments of the present application, wherein the optical system includes a shaping member of the laser beam, which shapes the laser light emitted from the laser into a beam having a predetermined spot pattern, and a guide member which guides the beam to the substrate.
According to another aspect of an embodiment of the present application, wherein the guide member comprises a scannable mirror.
According to another aspect of embodiments herein, wherein the guiding member guides the light beam to the front surface and/or the back surface of the substrate.
According to another aspect of the embodiments of the present application, wherein the control system controls the light beam to process the fine structure on the front surface and the back surface of the substrate separately or simultaneously.
According to another aspect of the embodiments of the present application, wherein the laser processing apparatus further comprises a pattern alignment system that aligns a surface to be processed of the substrate with a predetermined pattern.
According to another aspect of embodiments of the present application, there is provided a laser processing method of forming a fine structure on a substrate, the laser processing method including:
emitting laser by a laser;
carrying the substrate by an objective table; and
and guiding laser light emitted from the laser to the substrate by an optical system to irradiate a plurality of light beams to the substrate, wherein the laser, the stage and the optical system are controlled by a control system according to a processing pattern of the microstructure.
The beneficial effect of this application lies in: the substrate can be processed into a microstructure by a plurality of laser beams, respectively, or simultaneously, thereby improving the productivity of processing a microstructure by a laser beam.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic view of a microfabrication device of the present invention;
FIG. 2 is a cross-sectional view of the stage taken along the vertical direction;
FIG. 3 is a schematic view of a laser processing apparatus for processing with a plurality of laser beams;
fig. 4 is a schematic view of a laser processing apparatus for processing the front and back surfaces of a substrate with a plurality of laser beams.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the description of the following examples of the present application: the horizontal direction refers to a direction parallel to the main surfaces (front and back surfaces) of the substrate, i.e., the direction of the X-Y plane; the vertical direction is a direction perpendicular to the horizontal direction, i.e., a direction of the Z-axis; the major surfaces of the substrate include the front and back surfaces of the substrate.
Example 1
Example 1 of the present application provides a laser processing apparatus that forms a fine structure on a substrate. Fig. 1 is a schematic diagram of the present embodiment. In this embodiment, the schematic diagram of fig. 1 includes only the most basic components of the laser processing apparatus of this embodiment, and the laser processing apparatus may further include other components not shown.
In the present embodiment, the substrate to be processed may be a semiconductor substrate or a non-semiconductor substrate, and in the following description of the present embodiment, a semiconductor substrate is taken as an example, but the following description is also applicable to the case where the substrate is a non-semiconductor substrate.
As shown in fig. 1, a laser processing apparatus 100 of the present embodiment includes a laser 1, a stage 3 on which a semiconductor substrate 2 is mounted, an optical system 5 which guides laser light (or laser beam) 4 emitted from the laser 1 to the semiconductor substrate 2, a pattern generating system 6 which forms a processing pattern of a microstructure, and a control system 7 which controls the laser 1, the stage 3, and the optical system 5 in accordance with the processing pattern. As described below, the laser processing apparatus 100 of the present embodiment can process a microstructure on the semiconductor substrate 2 simultaneously or separately with a plurality of laser beams 4.
The laser 1 may have a plurality of laser light emitting sources. That is, the laser 4 may have a plurality of beams. The wavelength, intensity, and waveform of the laser beam 4 can be selected according to the requirements of the object to be processed (semiconductor substrate 2). The laser 4 may be a continuous wave or a pulsed wave. The wavelength, intensity, waveform, etc. of each laser 4 may be the same as or different from those of the other lasers. Thus, the conductor substrate 2 can be simultaneously processed into a fine structure by the plural laser beams 4.
The semiconductor substrate 2 may be a wafer commonly used in the field of semiconductor manufacturing, for example, a Silicon wafer, a Silicon On Insulator (SOI) wafer, a Silicon germanium wafer, a gallium nitride wafer, a SiC wafer, or an insulating wafer such as quartz, sapphire, or glass. The semiconductor substrate 2 may be a wafer commonly used in the semiconductor manufacturing field, and may further include various thin films and various structures required for a semiconductor device or a MEMS device on the surface of the wafer.
The stage 3 is a tool for carrying and fixing the processed semiconductor substrate 2. The size of the stage 3 is designed according to the size of the semiconductor substrate 2, and may be adapted to a specific size of the semiconductor substrate 2 or to a plurality of sizes of the semiconductor substrates 2. The stage 3 may be fixed to the semiconductor substrate 2 by vacuum suction, mechanical fixing, or other conventional fixing methods. The stage 3 may be moved in the horizontal and vertical directions or may be rotated in the horizontal direction. In this way, even when the laser beam position is fixed, complicated 3-dimensional microstructure processing can be performed on the semiconductor substrate 2.
Fig. 2 is a cross-sectional view of the stage 3 in the vertical direction. As shown in fig. 2a), the stage 3 includes a stage frame 3a, a semiconductor substrate carrying portion 3b, and a through-hole 3 c. The central axis of the stage 3 in the vertical direction is 3 d. The state after the stage 3 has placed the semiconductor substrate 2 is shown in fig. 2 b). The semiconductor substrate 2 is fixed at the bearing portion 3 b. The portions of the two main surfaces 2a and 2b of the fixed semiconductor substrate 2 that need to be processed are exposed from the stage 3. As shown in fig. 2c), the stage 3 is movable in X, Y, Z three mutually orthogonal principal axis directions. For example, the X axis and the Y axis are horizontal, and the Z axis is vertical and coincides with a central axis 3d of the stage 3 in the vertical direction. As shown in fig. 2d), the stage 3 may be rotated within a horizontal plane (horizontal direction) formed by the X axis and the Y axis. That is, the stage 3 rotates about the Z axis. The rotation angle θ of the stage 3 may be any angle within 0 to 360 °. The rotation angle theta may also be out of the range of 0-360 deg., i.e. the stage 3 may be rotated continuously or in the opposite direction. The translation of the stage 3 in the X, Y, Z-axis directions and the rotation around the Z-axis are independent of each other, but may be performed simultaneously as necessary.
The optical system 5 is a system for guiding the laser light 4 emitted from the laser 1 to the semiconductor substrate 2, and may include a laser beam shaping member and a guiding member. For example, the optical system 5 may include a lens (i.e., a shaping member of the laser beam), an optical waveguide (i.e., a guide member), and may also include a mirror that can scan as a guide mechanism. The optical system 5 can shape the laser beam into a desired cross-sectional structure (spot pattern) and guide the laser beam to the semiconductor substrate 2 to be processed. When the optical system 5 includes a mirror that can scan, the laser light 4 can move independently of the semiconductor substrate 2, and the degree of freedom of microfabrication is improved.
Note that, in fig. 1, although the optical system 5 is shown to guide the laser light 4 to the front surface of the semiconductor substrate 2, the present embodiment is not limited thereto, and the optical system 5 may guide the laser light 4 to the front surface and/or the back surface of the semiconductor substrate 2, for example: the hollow structure of the stage 3 allows both main surfaces (i.e., the front surface and the back surface) of the semiconductor substrate 2 to be exposed to the outside, allowing the beam to approach, and the optical system 5 may have a plurality of optical paths in which the laser beams can be guided using optical waveguides as guiding members, so as to guide the laser beams to any one position of the semiconductor substrate 2, including to the front surface and the back surface of the semiconductor substrate 2. In the present application, the optical system 5 guides the laser light 4 to the front surface and/or the back surface of the semiconductor substrate 2, respectively, thereby enabling processing of either or both of the front surface and the back surface of the semiconductor substrate 2.
The pattern generation system 6 can be used to generate electronic information of a processing pattern of a microstructure to be processed. Graphics-generating system 6 may include a computer and drawing software. The electronic information of the processed pattern may contain information such as the size and layout of the microstructure. For example, the graphic generation system 6 may generate the electronic information of the 3-dimensional processing graphic by drawing, or may generate the electronic information of the 3-dimensional processing graphic by inputting coordinates.
The control system 7 can control the laser 1, the stage 3, and the optical system 5 according to the processing pattern. The control system 7 comprises a computer and control software. The control system 7 may share one controller (e.g., a computer) with the graphics-generating system 6, or may be provided in a different controller. The control of the laser 1 by the control system 7 may include controlling the laser 1 on and off, intensity, waveform, etc. The control of the stage 3 by the control system 7 may include controlling the distance and speed of movement of the stage 3 in the horizontal and vertical directions, and the angle and speed of rotation in the horizontal direction. The control of the optical system 5 by the control system 7 may include controlling the optical system 5 to adjust the cross-sectional structure of the laser beam 4, scanning the laser beam 4, and changing the focal point of the laser beam 4. When the optical system 5 includes a mirror that can scan, the control optical system 5 can control the scanning range and the scanning speed, etc. of the laser light 4.
As shown in fig. 2b), when the semiconductor substrate 2 is fixed on the stage 3, portions of both the principal surfaces 2a and 2b of the semiconductor substrate 2 to be processed are exposed. Therefore, the laser processing apparatus can process the microstructure on the two main surfaces 2a and 2b of the semiconductor substrate 2 separately or simultaneously.
The laser machining apparatus may include a pattern alignment system. The pattern alignment system comprises a pattern alignment mark detection mechanism and an alignment mechanism. When it is necessary to perform the processing of the microstructure on the two main surfaces of the semiconductor substrate 2 separately or simultaneously, the pattern alignment system may perform the pattern alignment on the two main surfaces of the semiconductor substrate 2 separately or simultaneously.
The laser machining apparatus may further include a debris removal system (not shown) for removing debris generated during the laser machining process. The scrap removal system can be arranged near the objective table 3, so that the scrap can be removed in time. For example, a vacuum suction system is provided near the stage 3 to remove the processing scraps in time.
As described above, the present embodiment provides a laser processing apparatus for forming a fine structure on a substrate, which can process a fine structure on a semiconductor substrate by a plurality of laser beams individually or simultaneously, thereby improving the production efficiency of the laser direct processing method.
Example 2
Example 2 of the present application provides a laser processing apparatus and a processing method for forming a fine structure on a substrate. Fig. 3 is a schematic diagram of the present embodiment. The laser processing apparatus in this embodiment has the basic configuration and the basic functions described in embodiment 1, and the description thereof is omitted here.
As shown in fig. 3, this embodiment illustrates that the laser processing apparatus 100 can process the microstructure 8 on one main surface 2a of the semiconductor substrate 2 with a plurality of laser beams (only two laser beams 4a and 4b are shown in fig. 3 for simplicity) separately or simultaneously. The alignment of the positions of the layouts of the different structures can be performed using alignment marks 9 formed before the processing of the fine structure 8. The processing patterns of the plural laser beams 4a and 4b may be the same or different. In this processing method, the geometrical characteristics such as the depth and width of each single pattern in the microstructure 8 can be made the same or different. Such a high degree of freedom is not achievable by conventional lithography plus etching.
As described above, in the present embodiment, the microstructure can be processed on the same main surface of the substrate by the plurality of laser beams, respectively, or simultaneously, and the production efficiency and the processing freedom of the laser direct processing method can be improved.
Example 3
Example 3 of the present application provides another laser processing apparatus and processing method for forming a fine structure on a substrate. Fig. 4 is a schematic diagram of the present embodiment. The laser processing apparatus in this embodiment has the basic configuration and the basic functions described in embodiment 1, and the description thereof is omitted here.
As shown in fig. 4, the present embodiment is characterized in that: the laser processing apparatus 100 can process the microstructure 8 (including 8a and 8b) on two different principal surfaces 2a and 2b of the semiconductor substrate 2 by a plurality of laser beams (only two laser beams 4a and 4b are shown in fig. 4 for simplicity) separately or simultaneously.
Specifically, the main surface 2a of the semiconductor substrate 2 is processed to have the microstructure 8a by the laser beam 4 a. The fine structure 8a may not penetrate the substrate 2. The microstructure 8a may also penetrate the substrate 2, i.e., communicate from one main surface 2a to the other main surface 2 b. In the process of processing the fine structure 8a, the alignment of the pattern may be performed using the alignment mark 9a formed before the processing of the fine structure 8 a. The laser 4a may include a plurality of laser beams, and the microstructure 8a may be processed on the main surface 2a of the semiconductor substrate 2 separately or simultaneously. Similarly, the other main surface 2b of the semiconductor substrate 2 may be processed to form the microstructure 8b by the laser beam 4 b. The fine structure 8b may not penetrate the substrate 2. The microstructure 8b may also penetrate the substrate 2, i.e. communicate from one main surface 2b to the other main surface 2 a. In the process of processing the fine structure 8b, the alignment of the pattern may be performed using the alignment mark 9b formed before the processing of the fine structure 8 b. The laser 4b may include a plurality of laser beams, and the microstructure 8b may be processed on the main surface 2b of the semiconductor substrate 2 separately or simultaneously. The alignment marks 9a and 9b may be positionally aligned with each other or positionally unrelated to each other. The fine structure 8a or 8b may not be connected. The microstructures 8a or 8b may also partially or entirely communicate with each other so as to penetrate the main surfaces 2a and 2b of the substrate 2. Obviously, in such a processing method, the geometrical characteristics such as the depth and the width of each single pattern in the microstructure 8 (including 8a and 8b) may be the same or different. Such a high degree of freedom is not achievable by conventional lithography plus etching.
As described above, in the present embodiment, the microstructure can be processed on the two opposing main surfaces of the semiconductor substrate by the plural laser beams, respectively, or simultaneously, and the production efficiency and the degree of freedom of the laser direct processing method can be improved.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (10)
1. A laser processing apparatus for forming a fine structure on a substrate, comprising:
a laser that emits laser light;
an object stage for carrying a substrate;
an optical system that guides laser light emitted from the laser to the substrate, thereby irradiating a plurality of light beams to the substrate;
a pattern generation system for forming a processing pattern of a microstructure; and
a control system that controls the laser, the stage, and the optical system according to the processing pattern.
2. The laser processing apparatus of claim 1, wherein the laser has a plurality of laser light emitting sources.
3. The laser processing apparatus according to claim 2, wherein the laser wavelengths of the plurality of laser light emission sources are the same or different.
4. The laser processing apparatus according to claim 1, wherein the stage moves in a plane parallel to the substrate and/or in a direction perpendicular to the plane, and rotates about an axis perpendicular to the plane.
5. The laser processing apparatus of claim 1, wherein the optical system includes a shaping member and a guiding member of the laser beam,
wherein the shaping part shapes the laser light emitted from the laser into a beam having a predetermined spot pattern,
the guide member guides the light beam to the substrate.
6. The laser processing apparatus of claim 5, wherein the guide member comprises a scannable mirror.
7. The laser processing apparatus according to claim 5, wherein the guide member guides the beam to a front surface and/or a back surface of the substrate.
8. The laser processing apparatus according to claim 5, wherein the control system controls the beam to perform the processing of the fine structure on the front surface and the back surface of the substrate separately or simultaneously.
9. The laser processing apparatus according to claim 1, wherein the laser processing apparatus further comprises a pattern alignment system that aligns a surface to be processed of the substrate with a predetermined pattern.
10. A laser processing method for forming a fine structure on a substrate, the laser processing method comprising:
emitting laser by a laser;
carrying the substrate by an objective table; and
directing laser light emitted by the laser to the substrate by an optical system to irradiate a plurality of light beams to the substrate,
wherein the laser, the stage, and the optical system are controlled by a control system according to a processing pattern of the microstructure.
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| CN202010076526.3A CN113146053A (en) | 2020-01-23 | 2020-01-23 | Laser processing device and laser processing method |
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| CN202010076526.3A CN113146053A (en) | 2020-01-23 | 2020-01-23 | Laser processing device and laser processing method |
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