CN113131874A - Doherty power amplifier for wireless communication - Google Patents

Doherty power amplifier for wireless communication Download PDF

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Publication number
CN113131874A
CN113131874A CN202110462806.2A CN202110462806A CN113131874A CN 113131874 A CN113131874 A CN 113131874A CN 202110462806 A CN202110462806 A CN 202110462806A CN 113131874 A CN113131874 A CN 113131874A
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microstrip line
matching
power amplifier
main
auxiliary
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苏杰
李孙华
徐祎喆
朱勇
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Barrot Wireless Co Ltd
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Barrot Wireless Co Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/04Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
    • H03F1/06Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
    • H03F1/07Doherty-type amplifiers

Abstract

The invention provides a Doherty power amplifier for wireless communication, belonging to the field of wireless communication. The invention mainly comprises a power distribution module, a main amplifying circuit module, an auxiliary amplifying circuit module and a load modulation network module. The main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network; the main input matching network and the auxiliary input matching network are cascaded through multistage microstrip lines to carry out step matching. The Doherty power amplifier for wireless communication has the advantages that the Doherty power amplifier for wireless communication is cascaded through microstrip stages, and impedance transformation is reduced by adopting a step-type input and output matching mode, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and a full-band inner compensation line meets phase compensation.

Description

Doherty power amplifier for wireless communication
Technical Field
The invention relates to the field of wireless communication, in particular to a Doherty power amplifier for wireless communication.
Background
The pace of 5G communications has increased in pace with the intense competition in recent years, stimulating an unprecedented interest in low cost and high performance radio frequency power amplifiers. In a transceiver of a wireless communication system, how to effectively amplify a high peak-to-average ratio signal has become an important issue. The prior art generally adopts a power supply modulation technology or a power amplifier with a traditional Doherty structure to amplify a high peak-to-average ratio signal.
The structure of the traditional Doherty power amplifier for wireless communication is that two paths of power amplifiers are used, as shown in fig. 1, one path works in class AB as a main power amplifier, and the other path works in class B or class C as an auxiliary power amplifier. The input end is a Wilkinson second-order power divider. When the power of the input signal is small, the main power amplifier is turned on and outputs the signal, and the auxiliary power amplifier is turned off, so that the load is increased to reduce the power consumption of the power supply; when the power of the input signal is gradually increased, the threshold voltage of the auxiliary power amplifier is reached, the working state is also entered, the load is reduced, and the output power is improved. With this scheme, the efficiency can be improved at power back-off, i.e. the average efficiency of the power amplifier can be improved.
However, in the conventional Doherty power amplifier for wireless communication, a lambda/4 impedance transformation line is arranged at the output end of the main amplifier to play a role of load modulation. However, the selection of the λ/4 microstrip line to the frequency can greatly limit the bandwidth of the Doherty power amplifier, so that the Doherty power amplifier can only work in a narrow frequency band, the gradual change from 2Zopt to Zopt cannot be realized in the full frequency band, and an offset line for phase compensation is arranged at the input end of the auxiliary power amplifier, but the compensation line cannot meet the phase compensation in the full frequency band, and the length of the compensation line can be correspondingly changed along with the frequency offset central point, so that the impedance change can be caused, the impedance matching is influenced, and the power amplifier cannot be matched with the optimal load.
Disclosure of Invention
The application provides a Doherty power amplifier for wireless communication, which is cascaded through microstrip stages and adopts a step-type input and output matching mode to reduce impedance transformation, thereby expanding the bandwidth of the Doherty power amplifier for wireless communication.
In order to achieve the above object, the present invention provides a Doherty power amplifier for wireless communication, comprising: the power distribution module, the main amplifying circuit module, the auxiliary amplifying circuit module and the load modulation network module;
the power distribution module is used for distributing the input signals into a plurality of paths of signals with preset phase difference and respectively outputting the signals to the main amplification circuit module and the auxiliary amplification circuit module; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for performing power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for performing power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation module is used for carrying out load modulation on a synthesized signal synthesized by the main amplified signal and the auxiliary amplified signal; the main input matching network and the auxiliary input matching network are cascaded through multistage microstrip lines to carry out step matching.
The Doherty power amplifier for wireless communication has the advantages that the Doherty power amplifier for wireless communication is cascaded through microstrip stages, and impedance transformation is reduced by adopting a step-type input and output matching mode, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and a full-band inner compensation line meets phase compensation.
Drawings
Fig. 1 is a schematic circuit diagram of a prior art Doherty power amplifier for wireless communication;
figure 2 is a schematic diagram of a quarter-wavelength microstrip line;
fig. 3 is a schematic structural diagram of an embodiment of a Doherty power amplifier for wireless communication according to the present application;
FIG. 4 is a schematic view of a T-shaped structure used in the present application;
fig. 5 is a schematic structural diagram of an embodiment of a Doherty power amplifier for wireless communication according to the present application;
fig. 6 is a schematic structural diagram of an embodiment of a Doherty power amplifier for wireless communication according to the present application;
fig. 7 is a schematic circuit diagram of an embodiment of a Doherty power amplifier for wireless communication according to the present invention.
The components in the figure are labeled as follows:
t1-first, T2-second, T3-third, T4-fourth, T5-fifth, T6-sixth, T7-seventh, T8-eighth, T9-ninth, T10-tenth, T11-eleventh, T12-twelfth, T13-thirteenth, T14-fourteenth, T15-first, T16-second, T17-third, T18-fourth, TO 1-first, TO 2-second, TO 3-third, TO 4-fourth, the tunable filter comprises a TO 5-a fifth modulation microstrip line, C1-a first matching capacitor, C2-a second matching capacitor, C3-a third matching capacitor, C4-a fourth matching capacitor, C5-a fifth matching capacitor, C6-a sixth matching capacitor, C7-a first voltage stabilizing capacitor, C8-a second voltage stabilizing capacitor, C7-a third voltage stabilizing capacitor, C6-a fourth voltage stabilizing capacitor, R1-a first matching resistor, R2-a second matching resistor, R3-a first connecting resistor and R4-a second connecting resistor.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, and the scope of the present invention can be more clearly defined.
It should be noted that, herein, relationships such as first and second, etc., are intended to distinguish one entity or operation from another entity or operation without necessarily requiring or implying any actual such relationship or order between such actual operations. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. The term "comprising", without further limitation, means that the element so defined is not excluded from the group of processes, methods, articles, or devices that include the element.
The prior art Doherty power amplifier has a major drawback: bandwidth problems. Many factors affect the bandwidth of the Doherty power amplifier: (1) an offset line for phase compensation is arranged at the input end of the auxiliary power amplifier, but the compensation line cannot meet the phase compensation in a full frequency band, and the length of the compensation line can be correspondingly changed along with a frequency offset central point, so that the power amplifier cannot be matched with the optimal load. (2) In the traditional Doherty power amplifier, a lambda/4 impedance transformation line is arranged at the output end of the main power amplifier to play a role in load modulation. However, the selection of the frequency of the λ/4 microstrip line can greatly limit the bandwidth of the Doherty power amplifier, so that the Doherty power amplifier can only work in a narrow frequency band, and the gradual change from 2Zopt to Zopt cannot be realized in the full frequency band.
When the lambda/4 impedance transformation line in the traditional Doherty power amplifier structure is used as a load modulation network,
the impedance value of the input end is as follows:
Figure BDA0003042950640000031
according to the relative bandwidth formula of the microstrip line:
Figure BDA0003042950640000032
defining the ratio of the input port impedance Zin of the microstrip line to the impedance ZL of the output port as an impedance transformation ratio:
where Γ is the maximum acceptable reflection coefficient in the circuit. It can be seen from the above formula that the relative bandwidth of the microstrip line can be controlled by the impedance transformation ratio, so that the requirement of expanding the bandwidth can be realized by reducing r, i.e. reducing the impedance transformation ratio.
Also, the 3dB bandwidth of the matching network can be represented by its center frequency and quality factor:
Figure BDA0003042950640000033
wherein: BW-fH-fL (bandwidth equal to high frequency minus low frequency),
f0 √ fH √ fL (the square of the center frequency is equal to the product of the high frequency and the low frequency);
in the high-order matching network, a certain section of impedance value is as follows: zn ═ Rn + jXn (reactance);
Figure BDA0003042950640000041
the quality factor is estimated using the maximum value of the node factors Qn,
the bandwidth of the extended Doherty power amplifier can be increased by lowering the Q value of the matching network.
In addition, in the conventional Doherty structure, the quarter-wavelength impedance transformation line has only one degree of freedom of impedance (i.e. the number of devices of the matching network, such as inductors, capacitors, resistors and microstrip lines), as shown in fig. 2, and is used as load modulation, so that the matching circuit is greatly limited in design, and therefore, the bandwidth of the Doherty power amplifier can be expanded by expanding the degree of freedom of the load modulation network
Fig. 3 is a schematic diagram illustrating an embodiment of a Doherty power amplifier for wireless communication according to the present application.
In the specific embodiment shown in fig. 3, the Doherty power amplifier for wireless communication of the application comprises a power distribution module, a main amplification circuit module, an auxiliary amplification circuit module and a load modulation network module.
The power distribution module is used for distributing the input signals into a plurality of paths of signals with preset phase difference and respectively outputting the signals to the main amplification circuit module and the auxiliary amplification circuit module; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for performing power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for performing power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation module is used for carrying out load modulation on a synthesized signal obtained by synthesizing the main amplified signal and the auxiliary amplified signal.
The main input matching network and the auxiliary input matching network are cascaded through multistage microstrip lines to carry out step matching.
According to the Doherty power amplifier, the impedance transformation ratio can be reduced by cascade matching of the multistage microstrip lines, and the Q value is reduced, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the condition that a full-band internal compensation line meets phase compensation is realized.
In one specific example of the present application, the power distribution module employs an equal power distributor with a power ratio of 1: 1.
In a specific embodiment of the present application, the load modulation module comprises an inverted T-shaped structure composed of a plurality of microstrip lines.
With only one degree of freedom of impedance relative to the quarter-wave impedance transformation line, designing the load modulation network to be of a T-shaped configuration, one free variable can be expanded to four free variables, as shown in figure 4,
and (3) carrying out cascade characteristic characterization according to the ABCD matrix:
Figure BDA0003042950640000042
Figure BDA0003042950640000043
Figure BDA0003042950640000044
Figure BDA0003042950640000045
the input impedance of the network can be expressed as:
Figure BDA0003042950640000046
Figure BDA0003042950640000047
from the above equations, when ZM, BO, ZM, SAT, ZMT, BO and ZMT, SAT are determined, the parameters of the inverted T structure can be calculated, and thus the four free classes Z1, θ 1, Z2 and θ 2 of the structure can be determined.
The four free classification variables can enable the circuit design of the Doherty power amplifier for wireless communication to be more flexible, and the adjustment range to be larger, so that the bandwidth required by the Doherty power amplifier for wireless communication is realized.
In one embodiment of the present application, the design is based on a GaN HEMT rf transistor, with the following performance parameters:
the working frequency is as follows: 2.8-3.8 GHz;
saturated output power: 42.8-44.2 dBm;
saturated drain efficiency: 62 to 68 percent;
back-off drain efficiency @6 dB: 38 to 43 percent.
In a specific embodiment of the present application, a quiescent operating point of the main power amplifier is selected according to that a general operating mode of the power amplifier is a class AB mode, and a drain voltage VDS of the main power amplifier can be selected to be 28V, a corresponding quiescent drain current IDS is 0.235mA, and a gate voltage VGS thereof can be selected to be-2.7V, referring to a datashiet of a transistor. However, it should be noted that the auxiliary power amplifier operates in class C, and when the quiescent operating point is selected, it is necessary to consider that the gate bias voltages are different, so that the parameter settings for performing Source-pull and Load-pull on the transistors are different, and the corresponding optimal input/output impedance values of the transistors are also different.
In an embodiment of the present application, as shown in fig. 7, the main input matching network includes a first matching microstrip line T1, a first matching capacitor C1, a second matching microstrip line T2, an RC parallel circuit composed of a second matching capacitor C2 and a first matching resistor R1, a third matching microstrip line T3, and a fourth matching microstrip line T4 connected in series in this order;
the auxiliary input matching network comprises an RC parallel circuit consisting of an eighth matching microstrip line T8, a fourth matching capacitor C4, a ninth matching microstrip line T9, a fifth matching capacitor C5 and a second matching resistor R2, a tenth matching microstrip line T10 and an eleventh matching microstrip line T11 which are connected in series.
The multi-stage microstrip cascade circuit comprises an RC parallel circuit consisting of the first matching microstrip line T1, the first matching capacitor C1, the second matching microstrip line T2, the second matching capacitor C2 and the first matching resistor R1, and a multistage microstrip cascade consisting of the third matching microstrip line T3 and the fourth matching microstrip line T4, so that the impedance transformation ratio of the main amplifying circuit can be reduced, the Q value is reduced, the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the full-band internal compensation line meets the phase compensation.
The multistage microstrip cascade circuit formed by the RC parallel circuit formed by the eighth matching microstrip line T8, the fourth matching capacitor C4, the ninth matching microstrip line T9, the fifth matching capacitor C5 and the second matching resistor R2, the tenth matching microstrip line T10 and the eleventh matching microstrip line T11 can reduce the impedance transformation ratio of the main power amplifier and reduce the Q value, thereby expanding the bandwidth of the Doherty power amplifier for wireless communication and realizing that a full-band compensation line meets phase compensation.
Wherein the first matching resistor R1 and the second matching resistor R2 in the RC circuit can filter noise in the input loop of the main power amplifier and the auxiliary power amplifier.
In one specific embodiment of the present application, as shown in fig. 7, the main output matching network includes a fifth matching microstrip line T5, a sixth matching microstrip line T6, a seventh matching microstrip line T7 and a third matching capacitor C3 connected in series;
the main output matching network comprises a twelfth matching microstrip line T12, a thirteenth matching microstrip line T13, a fourteenth matching microstrip line T14 and a sixth matching capacitor C6 which are connected in series.
In an embodiment of the present application, as shown in fig. 7, the inverted T structure includes a first modulation microstrip line TO1, a second modulation microstrip line TO2, a third modulation microstrip line TO3, a fourth modulation microstrip line TO4 and a fifth modulation microstrip line TO5 which are connected in series in sequence, and the second modulation microstrip line TO2 and the third modulation microstrip line TO2 are open stubs.
In the inverted-T structure of the present embodiment, the four degrees of freedom provided by the first modulation microstrip line TO1, the second modulation microstrip line TO2, the third modulation microstrip line TO3, and the fourth modulation microstrip line TO4 enable the Doherty power amplifier for wireless communication TO have a more flexible circuit design and a wider adjustment range, thereby realizing a bandwidth required by the Doherty power amplifier for wireless communication.
In an embodiment of the present application, the Doherty power amplifier for wireless communication of the present application further comprises an impedance balancing module, as shown in fig. 5 and 7, which includes a first connecting microstrip line T15 connecting the main output matching network and the load modulation module, and a second connecting microstrip line T16 connecting the auxiliary output matching network and the load modulation module.
The impedance balancing module is capable of balancing impedances at the outputs of the main power amplifier and the auxiliary power amplifier.
In an embodiment of the present application, the Doherty power amplifier for wireless communication further includes a power circuit module as shown in fig. 6 and 7, where the power circuit module includes a third connecting microstrip line T17, a fourth connecting microstrip line 18, a first voltage stabilizing capacitor C7 and a second voltage stabilizing capacitor C8, a dc power source is connected to the main amplifier circuit module through the third connecting microstrip line T17, the first voltage stabilizing capacitor C7 and the third connecting microstrip line T17 are grounded after being connected in parallel near a power supply end, the dc power source is connected to the auxiliary amplifier circuit module through the fourth connecting microstrip line T18, and the second voltage stabilizing capacitor C8 and the fourth connecting microstrip line T18 are grounded after being connected in parallel near the power supply end.
The direct current power supply provides power for the main amplifying circuit module and the auxiliary amplifying circuit module, wherein ripples exist in the power supply of the direct current power supply end, and therefore the ripples can be filtered out by connecting a large capacitor in parallel on a line close to the power supply end.
In an embodiment of the present application, the Doherty power amplifier for wireless communication further includes a bias circuit module as shown in fig. 6, the bias circuit module includes a first connection resistor R3, a second connection resistor R4, a third voltage-stabilizing capacitor C9 and a fourth voltage-stabilizing capacitor C10, the dc bias voltage Vgs is used for connecting the main amplifier circuit module through the first connection resistor R3, the third voltage-stabilizing capacitor C9 is connected in parallel with the first connection resistor R3 near the power source end and then grounded, the dc bias voltage Vgs is connected with the auxiliary amplifier circuit module through the second connection resistor R4 and the fourth capacitor C10 is connected in parallel with the second connection resistor R4 near the power source end and then grounded.
The bias circuit module is set to be a taigong bias voltage of the main amplification circuit module and the auxiliary amplification circuit module, wherein a larger capacitor is connected in parallel to the voltage end to filter out ripples existing in the direct current bias voltage.
In a specific embodiment of the present application, the main power amplifier includes a first MOS transistor, the auxiliary power amplifier includes a second MOS transistor, and the first MOS transistor and the second MOS transistor are MOS transistors having the same structure type.
In a specific embodiment of the present application, a gate of the first MOS transistor is connected to the main input matching network, a drain of the first MOS transistor is connected to the main output matching network, and a source of the first MOS transistor is grounded;
the grid electrode of the second MOS tube is connected with the main input matching network, the drain electrode of the second MOS tube is connected with the main output matching network, and the source electrode of the second MOS tube is grounded.
Preferably, the Doherty power amplifier for wireless communication comprises a power distribution module, a main amplification circuit module, an auxiliary amplification circuit module, a load modulation network module, an impedance balance module, a power circuit module and a bias circuit module, wherein a main input matching network of the main amplification circuit module and the auxiliary input matching network of the auxiliary amplification circuit module are cascaded through a plurality of microstrip lines to perform step matching, the load modulation module comprises an inverted T-shaped structure composed of a plurality of microstrip lines, the specific circuit structure is shown in fig. 7, the power distribution module adopts an equipower distributor with a power ratio of 1:1, selects a static operating point of the main power amplifier, refers to a datasheet of a transistor, selects a drain voltage VDS of the main power amplifier to be 28V, a corresponding static drain current IDS to be 0.235mA, and a gate voltage VGS to be-2.7V, the auxiliary power amplifier works in class C.
The specific example can enhance the broadband performance of the Doherty power amplifier for wireless communication, the power amplifier can support the frequency band range of 2.8-3.8GHz, the broadband performance is enhanced, the power amplifier can support the frequency band range of 2.8-3.8GHz, the saturated drain efficiency and the 6dB back-off drain efficiency are high, the saturated drain efficiency can reach 68% at most, and the 6dB back-off drain efficiency can reach 43% at most.
In the embodiments provided in the present application, it should be understood that the disclosed method and system may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, for example, the division of the units is only one division of logical functions, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some interfaces, and may be in a typical, mechanical or other form.
The units described as separate but not illustrated may or may not be physically separate, and components displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all equivalent structural changes made by using the contents of the specification and the drawings, which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.

Claims (10)

1. A Doherty power amplifier for wireless communication, comprising: the power distribution module, the main amplifying circuit module, the auxiliary amplifying circuit module and the load modulation network module;
the power distribution module is used for distributing the input signals into a plurality of paths of signals with preset phase difference and respectively outputting the signals to the main amplification circuit module and the auxiliary amplification circuit module; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for performing power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for performing power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation module is configured to perform load modulation on a synthesized signal synthesized from the main amplified signal and the auxiliary amplified signal,
the main input matching network and the auxiliary input matching network are cascaded through multistage microstrip lines to carry out step matching.
2. The Doherty power amplifier for wireless communication of claim 1, wherein,
the load modulation module comprises an inverted T-shaped structure consisting of a plurality of microstrip lines.
3. The Doherty power amplifier for wireless communication of claim 1, wherein,
the main input matching network comprises a first matching microstrip line, a first matching capacitor, a second matching microstrip line, an RC parallel circuit consisting of the second matching capacitor and a first matching resistor, a third matching microstrip line and a fourth matching microstrip line which are sequentially connected in series;
the auxiliary input matching network comprises an RC parallel circuit, a tenth matching microstrip line and an eleventh matching microstrip line, wherein the RC parallel circuit is composed of an eighth matching microstrip line, a fourth matching capacitor, a ninth matching microstrip line, a fifth matching capacitor and a second matching resistor which are connected in series.
4. The Doherty power amplifier for wireless communication of claim 3, wherein,
the main output matching network comprises a fifth matching microstrip line, a sixth matching microstrip line, a seventh matching microstrip line and a third matching capacitor which are connected in series;
the main output matching network comprises a twelfth matching microstrip line, a thirteenth matching microstrip line, a fourteenth matching microstrip line and a sixth matching capacitor which are connected in series.
5. The Doherty power amplifier for wireless communication of claim 2, wherein,
the inverted T-shaped structure comprises a first modulation microstrip line, a second modulation microstrip line, a third modulation microstrip line, a fourth modulation microstrip line and a fifth modulation microstrip line which are sequentially connected in series, wherein the second modulation microstrip line and the third modulation microstrip line are open-circuit stub lines.
6. The Doherty power amplifier for wireless communication of claim 1, further comprising an impedance balancing module,
the impedance balancing module comprises the first connecting microstrip line which is connected with the main output matching network and the load modulation module, and the second connecting microstrip line which is connected with the auxiliary output matching network and the load modulation module.
7. The Doherty power amplifier for wireless communication of claim 1, further comprising a power supply circuit module,
the power circuit module comprises a third connecting microstrip line, a fourth connecting microstrip line, a first voltage stabilizing capacitor and a second voltage stabilizing capacitor, a direct current power supply is connected with the main amplifying circuit module through the third connecting microstrip line, the first voltage stabilizing capacitor and the third connecting microstrip line are connected in parallel close to the power end and then grounded, the direct current power supply is connected with the auxiliary amplifying circuit module through the fourth connecting microstrip line, and the second voltage stabilizing capacitor and the fourth connecting microstrip line are connected in parallel close to the power end and then grounded.
8. The Doherty power amplifier for wireless communication of claim 1, further comprising a bias circuit module,
the bias circuit module comprises a first connecting resistor, a second connecting resistor, a third voltage-stabilizing capacitor and a fourth voltage-stabilizing capacitor, direct-current bias voltage passes through the first connecting resistor and is used for being connected with the main amplification circuit module, the third voltage-stabilizing capacitor is grounded after being close to the power supply end in parallel, the direct-current bias voltage passes through the second connecting resistor and is connected with the auxiliary amplification circuit module, and the fourth capacitor is grounded after being close to the power supply end in parallel.
9. The Doherty power amplifier for wireless communication of claim 1, wherein,
the main power amplifier comprises a first MOS tube, the auxiliary power amplifier comprises a second MOS tube, and the first MOS tube and the second MOS tube are MOS tubes with the same structure type.
10. The Doherty power amplifier for wireless communication of claim 8, wherein,
the grid electrode of the first MOS tube is connected with the main input matching network, the drain electrode of the first MOS tube is connected with the main output matching network, and the source electrode of the first MOS tube is grounded;
the grid electrode of the second MOS tube is connected with the main input matching network, the drain electrode of the second MOS tube is connected with the main output matching network, and the source electrode of the second MOS tube is grounded.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114448366A (en) * 2022-02-09 2022-05-06 苏州英嘉通半导体有限公司 Power amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114448366A (en) * 2022-02-09 2022-05-06 苏州英嘉通半导体有限公司 Power amplifier
CN114448366B (en) * 2022-02-09 2024-03-12 苏州英嘉通半导体有限公司 Power amplifier

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