CN113130683A - High-speed high-sensitivity ZnO nanowire array radio frequency ultraviolet detector - Google Patents

High-speed high-sensitivity ZnO nanowire array radio frequency ultraviolet detector Download PDF

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CN113130683A
CN113130683A CN202110409012.XA CN202110409012A CN113130683A CN 113130683 A CN113130683 A CN 113130683A CN 202110409012 A CN202110409012 A CN 202110409012A CN 113130683 A CN113130683 A CN 113130683A
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高志远
李洪达
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Beijing University of Technology
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Abstract

A high-speed and high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector relates to the field of nanotechnology and ultraviolet detection. The composite metal electrode layer is arranged on the ZnO seed layer in a staggered mode, meanwhile, part of the seed layer is exposed on the side to form a step-shaped structure, and a ZnO nanowire array grows obliquely upwards on the exposed seed layer. Under the ultraviolet illumination, the change of the depletion layer on the surface of the ZnO nanowire enables the capacitance in the ZnO nanowire array to change, the change of the capacitance can cause the change of the radio frequency resonance frequency of the nanowire, and the ultraviolet light is detected by detecting the change of the resonance frequency. The invention adopts the design of the nanowire array, can improve the resonance frequency of the ZnO nanowire array, enlarges the capacitance change span of the ZnO nanowire array, further improves the detection sensitivity of ultraviolet light and the range of detectable ultraviolet light intensity, and improves the detection speed and sensitivity of the ultraviolet light.

Description

High-speed high-sensitivity ZnO nanowire array radio frequency ultraviolet detector
Technical Field
The invention relates to the field of nanotechnology and ultraviolet detection, in particular to a high-speed and high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector.
Background
The ultraviolet detector has important application in the fields of astronomical observation, military early warning, information communication, aerospace exploration, disaster remote sensing and the like. Because a large amount of gas molecules and dust with strong ultraviolet absorption and scattering capacity exist in the natural environment, the purple to be detectedThe intensity of the external light reaching the detector is often very weak, which puts higher demands on the sensitivity and response speed of the ultraviolet detector. ZnO as a third generation wide band gap semiconductor material has higher band gap (3.37ev) and larger exciton confinement energy (60 mv at room temperature), and the nano structure of the ZnO can be approximately a defect-free crystal, so the ZnO is an excellent material as an ultraviolet detector. The traditional direct current ultraviolet detector made of ZnO nano materials mainly comprises a photoconductive type, a P-N junction type and a Schottky type. The photoconductive ultraviolet detector is widely applied, and the transverse bridging ZnO nanowire ultraviolet detector is a device with better performance, but the dark current is slowly recovered due to the slow oxygen adsorption process during working, the reduction time is longer, and the device is not suitable for repeated detection in a short time; the P-N junction type ZnO film ultraviolet detector has lower working bias voltage and lower power consumption, but the high-quality P type ZnO film is difficult to prepare, so that the performance of the P type ZnO film is unstable, and the production of devices is greatly limited; the Schottky ultraviolet detector based on the ZnO nanostructure has high response speed and low noise, but a Schottky barrier formed by ZnO and metal has larger surface leakage, so that the dark current is too large, and the optical gain is reduced. Compared with an ultraviolet detector working under a direct current condition, in a radio frequency system, frequency drift caused by capacitance change of the ZnO nanowire becomes a new sensing degree of freedom to carry out sensing measurement. ZnO has abundant nano structures, and the realization of the nano-wire array enables the whole capacitance span of the detector to be increased, so that the detection range of the nano-wire array is enlarged, and a new way is provided for realizing a high-speed and high-sensitivity ultraviolet detector. At present, the radio frequency ultraviolet detection is only a radio frequency ultraviolet detector designed by AlGaN base, and the detector is prepared by epitaxially growing an AlGaN base film on a sapphire substrate and photoetching an Al interdigital electrode on the AlGaN base film. Under the ultraviolet irradiation, the impedance of the radio frequency ultraviolet detector is changed due to the increase of photo-generated carriers, so that the resonance frequency is changed, and the detection sensitivity of the ultraviolet is 40 KHz/(mu w/cm)2). However, the AlGaN thin film has high production cost, complex process, expensive equipment and lack of suitable epitaxial growth materials, so that the AlGaN-based radio frequency ultraviolet detector is difficult to be widely applied.
Disclosure of Invention
In view of this, the present invention provides a high-speed and high-sensitivity ZnO nanowire array rf ultraviolet detector, which utilizes the high sensitivity of rf signals to capacitance variation. In the air circumstance, when there is no ultraviolet irradiation, the surface depletion layer is formed on the surface of the ZnO nanowire, when the ultraviolet irradiation is carried out, the energy generated by the absorption of photon energy by the surface depletion layer of the ZnO nanowire is generated, so that the surface depletion layer is thinned, and the change of the surface depletion layer of the ZnO nanowire can change the capacitance in the ZnO nanowire array. The capacitance change will cause the change of the radio frequency resonance frequency of the nano-wire, and ultraviolet light is detected by detecting the change of the resonance frequency.
The invention provides a high-speed high-sensitivity ZnO nanowire array radio frequency ultraviolet detector, wherein a composite metal electrode layer is arranged on a ZnO seed layer in a staggered mode, meanwhile, part of the seed layer is exposed on the side to form a step-shaped structure, and a ZnO nanowire array grows obliquely upwards on the side face of the exposed seed layer;
the seed layer is in a long and thin strip shape, the length-width ratio of the seed layer to the seed layer in the upper surface and the lower surface is 20: 1-40: 1, the width of the seed layer is not more than 10 micrometers, and the corresponding thickness of the side surface is 50-400 nanometers;
the composite metal electrode includes: the titanium electrode layer is arranged on the seed layer, and the gold electrode layer is arranged on the titanium electrode layer;
the width of the step of the ZnO seed layer exposed outside the metal electrode is 3-7 microns.
The thickness of the titanium electrode layer is 15-40 nanometers, and the thickness of the gold electrode layer is 50-1000 nanometers.
The ZnO nanowire has a diameter of 50-500 nanometers and a length of 3-12 micrometers;
the ZnO nanowire array is uniform in size, and the length and the diameter of the ZnO nanowire array can be regulated and controlled as required.
According to the ultraviolet detection principle provided by the invention, the high-speed and high-sensitivity ZnO nanowire array radio-frequency ultraviolet sensor provided by the invention is based on the high sensitivity of radio-frequency signals to the capacitance change of ZnO nanowires; in the air circumstance, when there is no ultraviolet irradiation, the surface depletion layer is formed on the surface of the ZnO nanowire, when the ultraviolet irradiation is carried out, the energy generated by the absorption of photon energy by the surface depletion layer of the ZnO nanowire is generated, so that the surface depletion layer is thinned, and the change of the surface depletion layer of the ZnO nanowire can change the capacitance in the ZnO nanowire array. The capacitance change will cause the change of the radio frequency resonance frequency of the nano-wire, and ultraviolet light is detected by detecting the change of the resonance frequency.
The high-speed and high-sensitivity ZnO nanowire array radio-frequency ultraviolet sensor solves the problem that dark current is slow to recover under the direct current work of a common ZnO nanowire ultraviolet detector, and improves the response speed of a device. The high-speed and high-sensitivity ZnO nanowire array radio-frequency ultraviolet sensor provided by the invention is very sensitive to resonance frequency change caused by capacitance change and can be used for ultra-low light intensity ultraviolet light (5 mu w/cm)2～10μw/cm2) High-speed and high-sensitivity detection is carried out.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a structural view of a rectangular electrode in example 1 of the present invention;
FIG. 2(a) is a schematic view of the surface depletion layer formed by ZnO nanowires without UV irradiation, and the arrows indicate electric field lines;
FIG. 2(b) is a schematic diagram of the reduction of energy absorbed by a depletion layer on the surface of ZnO in the presence of ultraviolet light, and the arrows indicate electric field lines;
in FIGS. 1 to 2: 1-ZnO seed layer; 2-a titanium electrode layer; 3-a gold electrode layer; 4-ZnO nanowires; 5-ultraviolet light; 6-electric field lines;
FIG. 3(a) is a S11 Smith chart under UV light for example 1 of the present invention;
FIG. 3(b) is a graph of the resonance of S11 under UV illumination in accordance with example 1 of the present invention;
FIG. 4 is a graph showing the change of resonant frequency under different UV illumination intensities according to example 1 of the present invention;
FIG. 5(a) is a S11 Smith chart under UV light for example 2 of the present invention;
FIG. 5(b) is a S11 Smith chart under UV light for example 2 of the present invention;
FIG. 6(a) is a S11 Smith chart under UV light for example 3 of the present invention;
FIG. 6(b) is a S11 Smith chart under UV light for example 3 of the present invention;
fig. 7 is an SEM image of a ZnO nanowire array of the present invention.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to clearly and completely describe the technical solutions in the examples of the present invention, but the present invention is not limited to the following examples.
According to the high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector provided by the invention, under ultraviolet illumination, the capacitance in the ZnO nanowire array is changed due to the change of the depletion layer on the surface of the ZnO nanowire, the change of the capacitance causes the change of the radio-frequency resonant frequency of the nanowire, and ultraviolet light is detected by detecting the change of the resonant frequency.
According to the high-speed high-sensitivity ZnO nanowire array radio frequency ultraviolet detector provided by the invention, the composite metal electrode layer is arranged on the ZnO seed layer in a staggered mode, part of the seed layer is exposed to form a step-shaped structure, and the ZnO nanowire array grows obliquely upwards from the exposed seed layer;
the seed layer 1 is in a long and thin strip shape, the length-width ratio is 20: 1-40: 1, the width is not more than 10 micrometers, and the thickness is 50 nanometers-400 nanometers;
the composite metal electrode includes: the titanium electrode layer is arranged on the seed layer, and the gold electrode layer 3 is arranged on the titanium electrode layer 2;
the thickness of the titanium electrode layer is 15-40 nanometers; the thickness of the gold electrode layer is 50-1000 nanometers.
The ZnO nanowire has a diameter of 50-500 nanometers and a length of 3-12 micrometers;
the invention also provides a preparation method of the ultraviolet detector, which comprises the following steps:
step 1: washing an electrode substrate with acetone, absolute ethyl alcohol, deionized water and deionized water in sequence, and then blowing the electrode substrate with nitrogen;
step 2: after the electrode substrate in the step 1 is subjected to pre-baking, spin-coating negative photoresist on the front surface, and photoetching a groove pattern of a ZnO seed layer to be grown on the front surface after post-baking, exposure, development and glue application;
and step 3: growing a ZnO seed layer of 50-400 nm on the electrode substrate in the step 2 by radio frequency magnetron sputtering;
and 4, step 4: stripping the photoresist from the electrode substrate in the step 3 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer;
and 5: performing secondary photoetching on the electrode substrate with the ZnO seed layer in the step 4 to form a groove pattern of the composite electrode layer to be grown on the ZnO seed layer;
step 6: performing radio frequency magnetron sputtering on the electrode substrate in the step 5 to grow a 15-40 nanometer titanium electrode layer and a 50-1000 nanometer gold electrode layer;
and 7: stripping the photoresist from the electrode substrate in the step 6 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer and the composite electrode layer;
and 8: mixing zinc salt, hexamethylenetetramine and water to obtain a precursor solution;
and step 9: and (4) placing one surface of the composite electrode layer in the electrode substrate in the step (7) downwards to enable the composite electrode layer to float on the liquid surface, and carrying out hydrothermal method to synthesize the ZnO nanowire array.
Step 10: and (4) taking out the electrode substrate with the ZnO nanowire array grown in the step (9), repeatedly washing the electrode substrate with deionized water, and airing the electrode substrate in nitrogen to obtain the nanowire array ultraviolet detector.
In the present invention, the zinc salt used in the hydrothermal method is preferably Zn (NO3) 2.6H 2O (zinc nitrate hexahydrate); the molar ratio of the zinc salt to the hexamethylenetetramine is preferably 1: 1-1: 2; the concentration of the zinc salt is preferably 1 mmol/L-20 mmol/L; the concentration of the hexamethylene tetramine is preferably 1 mmol/L-40 mmol/L;
in the invention, the temperature of the hydrothermal reaction is preferably 70-90 ℃; the hydrothermal reaction time is preferably 8 to 16 hours.
The specific operation methods and conditions of the radio frequency magnetron sputtering and the photoetching adopted in the scheme have no special requirements, and the operation methods and conditions known by persons in the field can be used.
The invention adopts the design of the nanowire array, can improve the resonance frequency of the ZnO nanowire array, enlarges the capacitance change span of the ZnO nanowire array, further improves the detection sensitivity of ultraviolet light and the range of detectable ultraviolet light intensity, and improves the detection speed and sensitivity of the ultraviolet light.
Example 1
FIG. 1 is a schematic diagram of the growth of ZnO nanowire arrays according to example 1 of the present invention. FIGS. 2(a) and 2(b) are graphs illustrating the capacitance change of ZnO nanowires in the presence or absence of UV light according to the present invention;
the preparation method of the embodiment 1 specifically comprises the following steps:
step 1: washing a silicon dioxide electrode substrate with acetone, absolute ethyl alcohol, deionized water and deionized water in sequence, and then blowing the silicon dioxide electrode substrate with nitrogen;
step 2: after the silicon dioxide electrode substrate in the step 1 is subjected to pre-baking, a negative photoresist is spin-coated on the front surface, and after post-baking exposure development and glue application, a rectangular groove pattern of a ZnO seed layer 1 to be grown is photoetched on the front surface;
and step 3: performing radio frequency magnetron sputtering on the electrode substrate in the step 2, wherein the ZnO seed layer 1 has the width of 5 microns, the length of 200 microns and the thickness of 130 nanometers;
and 4, step 4: stripping the photoresist from the electrode substrate in the step 3 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1;
and 5: carrying out secondary photoetching on the electrode substrate with the ZnO seed layer 1 in the step 4 to form a rectangular groove pattern of a composite electrode layer to be grown on the ZnO seed layer;
step 6: sequentially growing a 15-nanometer titanium electrode layer and a 300-nanometer gold electrode layer on the electrode substrate in the step 5 through radio frequency magnetron sputtering;
and 7: stripping the photoresist from the electrode substrate in the step 6 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1 and the composite electrode layer, wherein the step width of the exposed seed layer is 3 microns;
and 8: adding Zn (NO)3)2·6H2Dissolving O10 mmol and HMTA 10mmol in 1L deionized water, and stirring to obtain precursor solution for growing ZnO nanowire array;
and step 9: putting 250ml of precursor liquid into a hydrothermal reaction vessel, placing the surface of the electrode substrate with the ZnO seed layer 1 and the composite electrode layer in the step 7 downwards, floating the electrode substrate on the liquid surface, and growing the electrode substrate in an 80-DEG thermostat for 10 hours;
step 10: and repeatedly washing the sample with the ZnO nanowire 4 by using deionized water, and airing the sample in a nitrogen environment. And obtaining the rectangular electrode ZnO nanowire array radio frequency ultraviolet detector.
The obtained ZnO nanowires 4 were observed with a scanning electron microscope, and as shown in the figure, it can be seen that the ZnO nanowires were distributed in a fan shape with an inclination angle of 30 to 160 degrees, an average diameter of 200 nm, and an average length of 8 μm.
The nanometer ultraviolet detector was subjected to radio frequency signal testing using Keysight (Germany technology) N5227B vector network analysis, and FormFactor MPS150 probe station. The vector network analyzer is connected with the probe station through a coaxial cable, the testing wavelength is 365nm, and the illumination intensity range is 1 mu w/cm2～1000μw/cm2The ultraviolet lamp and the vector network analyzer perform frequency sweep test on the device by using a radio frequency signal with a frequency sweep range of 10 MHz-40 GHz, a frequency sweep step length of 2MHz and a power of-17 dBm, and prick the probe to a gold electrode layer of a corresponding nano ultraviolet detectorAnd respectively testing the resonant frequency of the nano ultraviolet detector under the condition of no ultraviolet irradiation and the resonant frequency of the nano ultraviolet detector under the condition of ultraviolet irradiation. Irradiating the device by using different illumination intensities, wherein the irradiation interval time is 5 minutes, and the illumination intensity of each irradiation is respectively as follows: 1 μ w/cm2、2μw/cm2、 3μw/cm2、4μw/cm2、5μw/cm2、10μw/cm2、15μw/cm2、20μw/cm2、 25μw/cm2、35μw/cm2、50μw/cm2、75μw/cm2、100μw/cm2The test results using the vector network analyzer are shown in the figure, fig. 3(a) is a smith chart obtained by the test, fig. 3(b) is a resonance graph of S11 parameter obtained by the test, and the abscissa of fig. 3(b) is frequency sweep, unit gigahertz (GHz), and ordinate is S11 parameter, unit decibel (dB); the relationship between the frequency shift amount of the resonant frequency and the illumination intensity under different ultraviolet intensities is shown in FIG. 4, wherein the abscissa of FIG. 4 represents the illumination intensity in microwatts per square centimeter (μ w/cm)2) (ii) a The ordinate represents frequency offset, in megahertz (MHz); the lowest measurable light intensity of the rectangular source electrode structure can be seen to be 5 mu w/cm2The frequency shift amount is 4MHz, which is far lower than the lowest detectable light intensity of a common ultraviolet detector. Meanwhile, the sensitivity of the radio frequency ultraviolet detector is defined, and the sensitivity of the radio frequency ultraviolet detector is 5 mu w/cm2The sensitivity of the light intensity of (a) is 800 KHz/(mu w/cm)2) The response time was 0.9s and the recovery time was 1.03 s.
Example 2
The preparation method of the embodiment 2 of the invention comprises the following specific steps:
step 1: washing a silicon dioxide electrode substrate with acetone, absolute ethyl alcohol, deionized water and deionized water in sequence, and then blowing the silicon dioxide electrode substrate with nitrogen;
step 2: after the silicon dioxide electrode substrate in the step 1 is subjected to pre-baking, a negative photoresist is spin-coated on the front surface, and after post-baking exposure development and glue application, a rectangular groove pattern of a ZnO seed layer 1 to be grown is photoetched on the front surface;
and step 3: performing radio frequency magnetron sputtering on the electrode substrate in the step 2, wherein the ZnO seed layer 1 has the width of 5 microns, the length of 100 microns and the thickness of 130 nanometers;
and 4, step 4: stripping the photoresist from the electrode substrate in the step 3 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1;
and 5: preparing a trapezoidal groove pattern of the composite electrode layer to be grown by carrying out secondary photoetching on the electrode substrate with the ZnO seed layer 1 in the step 4;
step 6: sequentially growing a 15-nanometer titanium electrode layer and a 300-nanometer gold electrode layer on the electrode substrate in the step 5 through radio frequency magnetron sputtering;
and 7: stripping the photoresist from the electrode substrate in the step 7 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1 and the composite electrode layer, wherein the step width of the exposed seed layer is 3 microns;
and 8: adding Zn (NO)3)2·6H2Dissolving O10 mmol and HMTA 10mmol in 1L deionized water, and stirring to obtain precursor solution for growing ZnO nanowire array;
and step 9: putting 250ml of precursor liquid into a hydrothermal reaction vessel, placing the surface of the electrode substrate with the ZnO seed layer 1 and the composite electrode layer in the step 8 downwards, floating the electrode substrate on the liquid surface, and growing the electrode substrate in an 80-DEG incubator for 10 hours;
step 10: and repeatedly washing the sample with the ZnO nanowire 4 by using deionized water, and airing the sample in a nitrogen environment. And obtaining the trapezoid electrode ZnO nanowire array radio frequency ultraviolet detector.
The nanometer ultraviolet detector was subjected to radio frequency signal testing using Keysight (Germany technology) N5227B vector network analysis, and FormFactor MPS150 probe station. The vector network analyzer is connected with the probe station through a coaxial cable, the testing wavelength is 365nm, and the illumination intensity range is 2000 mu w/cm2The ultraviolet lamp and the vector network analyzer perform frequency sweep test on the device by using a radio frequency signal with a frequency sweep range of 10 MHz-40 GHz, a frequency sweep step length of 2MHz and a power of-17 dBm, prick the probe on a gold electrode layer of a corresponding nano ultraviolet detector, and respectively test the resonant frequency and the ultraviolet light of the nano ultraviolet detector under the condition of no ultraviolet light irradiationResonance frequency under illumination. The intensity of the ultraviolet light used was 10. mu.w/cm. The results of the test using the vector network analyzer are shown in the figure, fig. 5(a) is a smith chart obtained by the test, fig. 5(b) is a resonance graph of S11 parameter obtained by the test, and the abscissa of fig. 5(b) is frequency sweep in gigahertz (GHz); the ordinate is the S11 parameter, in decibels (dB); the results show that the UV intensity of example 2 according to the invention is 10. mu.w/cm2The offset of the resonance frequency is 6MHz, and the sensitivity of the invention is defined as low as 10 mu w/cm according to the sensitivity of the radio frequency ultraviolet detector2The sensitivity at light intensity of (2) was 600KHz/(μ w/cm2), the response time was 1.02s, and the recovery time was 1.05 s.
Example 3
The preparation method of the embodiment 2 of the invention comprises the following specific steps:
step 1: washing a silicon dioxide electrode substrate with acetone, absolute ethyl alcohol, deionized water and deionized water in sequence, and then blowing the silicon dioxide electrode substrate with nitrogen;
step 2: after the silicon dioxide electrode substrate in the step 1 is subjected to pre-baking, a negative photoresist is spin-coated on the front surface, and after post-baking exposure development and glue application, a rectangular groove pattern of a ZnO seed layer 1 to be grown is photoetched on the front surface;
and step 3: performing radio frequency magnetron sputtering on the electrode substrate in the step 2, wherein the ZnO seed layer 1 has the width of 10 microns, the length of 200 microns and the thickness of 130 nanometers;
and 4, step 4: stripping the photoresist from the electrode substrate in the step 3 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1;
and 5: preparing a trapezoidal groove pattern of the composite electrode layer to be grown by carrying out secondary photoetching on the electrode substrate with the ZnO seed layer 1 in the step 4;
step 6: sequentially growing a 15-nanometer titanium electrode layer and a 300-nanometer gold electrode layer on the electrode substrate in the step 5 through radio frequency magnetron sputtering, wherein the step width of the exposed seed layer is 5 micrometers;
and 7: stripping the photoresist from the electrode substrate in the step 6 by adopting a stripping process, and leaving the electrode substrate with the ZnO seed layer 1 and the composite electrode layer;
and 8: adding Zn (NO)3)2·6H2Dissolving O10 mmol and HMTA 10mmol in 1L deionized water, and stirring to obtain precursor solution for growing ZnO nanowire array;
and step 9: putting 250ml of precursor liquid into a hydrothermal reaction vessel, placing the surface of the electrode substrate with the ZnO seed layer 1 and the composite electrode layer in the step 6 downwards, floating the electrode substrate on the liquid surface, and growing the electrode substrate in an 80-DEG incubator for 10 hours;
step 10: and repeatedly washing the sample with the ZnO nanowire 4 by using deionized water, and airing the sample in a nitrogen environment. And obtaining the trapezoid electrode ZnO nanowire array radio frequency ultraviolet detector.
The nanometer ultraviolet detector was subjected to radio frequency signal testing using Keysight (Germany technology) N5227B vector network analysis, and FormFactor MPS150 probe station. The vector network analyzer is connected with the probe station through a coaxial cable, the testing wavelength is 365nm, and the illumination intensity range is 2000 mu w/cm2The ultraviolet lamp and the vector network analyzer perform frequency sweep test on the device by using a radio frequency signal with a frequency sweep range of 10 MHz-40 GHz, a frequency sweep step length of 2MHz and a power of-17 dBm, prick a probe on a gold electrode layer of a corresponding nano ultraviolet detector, and respectively test the resonant frequency of the nano ultraviolet detector under the condition of no ultraviolet irradiation and the resonant frequency under the condition of ultraviolet irradiation. The ultraviolet light intensity used is 2000 μ w/cm2. The results of the test using the vector network analyzer are shown in the figure, fig. 5(a) is a smith chart obtained by the test, fig. 5(b) is a resonance graph of S11 parameter obtained by the test, and the abscissa of fig. 5(b) is frequency sweep in gigahertz (GHz); the ordinate is the S11 parameter, in decibels (dB); the result shows that the resonance frequency offset of the invention is 1.25GHz, and the invention is defined by the sensitivity of the radio frequency ultraviolet detector at 2000 mu w/cm2The sensitivity at light intensity of 625KHz/(μ w/cm2), the response time was 1.04s, and the recovery time was 1.05 s.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (6)

1. A high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector is characterized in that a surface depletion layer is formed on a ZnO nanowire when no ultraviolet light is emitted, the surface depletion layer of the ZnO nanowire absorbs photon energy to be thinned when the ultraviolet light is emitted, and the capacitance of the ZnO nanowire is changed due to the change of the surface depletion layer of the ZnO nanowire; the capacitance change will cause the change of the radio frequency resonance frequency of the nano-wire, and ultraviolet light is detected by detecting the change of the resonance frequency.
2. A high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector is characterized in that a composite metal electrode layer is arranged on a ZnO seed layer in a staggered mode, meanwhile, a part of the seed layer is exposed on the side to form a step-shaped structure, and a ZnO nanowire array grows obliquely upwards on the side face of the exposed seed layer.
3. The high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector as claimed in claim 2, wherein the ZnO seed layer is in the shape of a long and thin strip, the length-width ratio of the upper surface to the lower surface is 20: 1-40: 1, the width of the upper surface to the lower surface is not more than 10 micrometers, and the thickness of the side surface is 50 nanometers-400 nanometers.
4. The high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector as claimed in claim 2, wherein the composite metal electrode comprises: the titanium electrode layer is arranged on the seed layer, and the gold electrode layer is arranged on the titanium electrode layer.
5. The high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector as claimed in claim 4, wherein the thickness of the titanium electrode layer is 15-40 nm, and the thickness of the gold electrode layer is 50-1000 nm.
6. The high-speed high-sensitivity ZnO nanowire array radio-frequency ultraviolet detector as claimed in claim 2, wherein the ZnO nanowires have a diameter of 50 nm to 500 nm and a length of 3 μm to 12 μm.
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