CN107039558A - A kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array and preparation method thereof - Google Patents
A kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 86
- 239000002070 nanowire Substances 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000002243 precursor Substances 0.000 claims description 19
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 14
- 238000005036 potential barrier Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 150000003751 zinc Chemical class 0.000 claims description 11
- 230000037230 mobility Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 166
- 239000010410 layer Substances 0.000 description 91
- 239000011787 zinc oxide Substances 0.000 description 83
- 238000000034 method Methods 0.000 description 19
- 230000005533 two-dimensional electron gas Effects 0.000 description 14
- 230000012010 growth Effects 0.000 description 12
- 230000004044 response Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000000825 ultraviolet detection Methods 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 239000003643 water by type Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- -1 oxygen ion Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- BEAZKUGSCHFXIQ-UHFFFAOYSA-L zinc;diacetate;dihydrate Chemical compound O.O.[Zn+2].CC([O-])=O.CC([O-])=O BEAZKUGSCHFXIQ-UHFFFAOYSA-L 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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Abstract
The invention provides a kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array, include the oblique ZnO nanowire array of the AlGaN/GaN HEMTs without grid and the AlGaN/GaN HEMT area of grid for being grown in no grid；GaN epitaxial layer in the AlGaN/GaN HEMTs without grid is the GaN layer of semi-polarity face (11 22)；The GaN epitaxial layer includes GaN cushions, GaN channel layers and GaN cap；The GaN channel layers are located at the upper surface of GaN cushions；The plane included angle of the oblique ZnO nanowire array and area of grid is 30~35 °.The present invention improves the detection efficient of detector by the oblique growing ZnO nano-wire array of area of grid in the HEMT without grid, realizes to the real-time, accurate of ultraviolet ray intensity, efficient detection.
Description
Technical field
It is more particularly to a kind of to be modulated based on oblique ZnO nanowire array the present invention relates to the technical field of semiconductor
AlGaN/GaN ultraviolet detectors and preparation method thereof.
Background technology
Ultraviolet light all generates very important influence to the ecosystem and mankind itself, and this is accomplished by carrying out ultraviolet light
In real time, monitor.Multinode detection is to ultraviolet detector in the fast-developing information age, emerging technology of Internet of things
Demand constantly increase, to the sensitivity of device and miniaturization it is also proposed that higher and higher require.
ZnO is the direct band-gap semicondictor with 3.37eV energy gaps, is as ultraviolet with high exciton bind energy
The superior material of detector.At present, being applied to the ZnO material of ultraviolet detector has ZnO film, single ZnO nano-wire, vertical junction
ZnO nanowire array of structure etc..
It is ultraviolet that the existing ZnO nano-wire based on AlGaN/GaN HEMT (HEMT) structure is modulated
Detector is to make ZnO nano-wire vertical-growth in HEMT area of grid.Conventional AlGaN/GaN HEMT devices use epitaxial layer
Using GaN polar surfaces, ZnO lattice structures and GaN mismatch are small, however, being in gate deposition ZnO Seed Layers or making ZnO
In area of grid direct growth, all can only growth of vertical in the ZnO nanowire array of gate planar；And the AlGaN/ of polar surface
Produced by the 2DEG (two-dimensional electron gas) of generation is due to GaN polarity effects at GaN heterojunction boundaries, polar surface can bring this tower
Gram effect, makes 2DEG be difficult to exhaust, so as to influence regulation and control of the ZnO nano-wire to 2DEG concentration, and then influences to ultraviolet detector
Sensitivity.
The content of the invention
In view of this, present invention aims at provide a kind of ultraviolet detection of the ZnO nanowire array based on oblique growth
Device, improves sensitivity and the detection efficient of ultraviolet detector, realizes to the real-time, accurate of ultraviolet ray intensity, efficient detection.
In order to realize foregoing invention purpose, the present invention provides following technical scheme：
The invention provides a kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array, including nothing
The AlGaN/GaN HEMTs of grid and it is grown in the AlGaN/GaN HEMTs without grid
The oblique ZnO nanowire array of area of grid；
GaN epitaxial layer in the AlGaN/GaN HEMTs without grid is semi-polarity face (11-22)
GaN layer；The GaN epitaxial layer includes GaN cushions, GaN channel layers and GaN cap；The GaN channel layers are buffered positioned at GaN
The upper surface of layer；
The plane included angle of the oblique ZnO nanowire array and area of grid is 30~35 °.
It is preferred that, a diameter of 50~500nm of ZnO nano-wire in the oblique ZnO nanowire array.
It is preferred that, the length of ZnO nano-wire is 1~4 μm in the oblique ZnO nanowire array.
It is preferred that, the structure of the AlGaN/GaN HEMTs without grid includes successively from bottom to top：Lining
Bottom, AlN nucleating layers, GaN cushions, GaN channel layers, AlGaN potential barrier, GaN cap and with GaN cap formation Ohmic contact
Source electrode and drain electrode；
Area of grid is located between source electrode and drain electrode；
Region between the area of grid and source electrode between region and area of grid and drain electrode is passivated layer and covered
Lid.
It is preferred that, the thickness of the AlN nucleating layers is 100~170nm；
The thickness of the GaN cushions is 1.5~3 μm；
The thickness of the GaN channel layers is 10~30nm；
The thickness of the AlGaN potential barrier is 10~30nm；
The thickness of the GaN cap is 1~4nm；
The thickness of the passivation layer is 100~140nm.
It is preferred that, the composition of the passivation layer is silicon nitride or silica.
The invention provides the preparation method of ultraviolet detector described in such scheme, comprise the following steps：
AlGaN/GaN HEMTs without grid are provided；
Zinc salt, hexa and water are mixed, precursor solution is obtained；
The upper surface of the AlGaN/GaN HEMTs without grid is immersed in the precursor solution,
Carry out hydro-thermal reaction.
It is preferred that, the temperature of the hydro-thermal reaction is 70~90 DEG C；The time of the hydro-thermal reaction is 7~10h.
It is preferred that, the mol ratio of the zinc salt and hexa is 1：1~1：2.
It is preferred that, the concentration of zinc salt is 2.5~20mmol/L in the precursor solution, and the concentration of hexa is
2.5~40mmol/L.
The invention provides a kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array, including nothing
The AlGaN/GaN HEMTs of grid and the AlGaN/GaN HEMT grids for being grown in no grid
The oblique ZnO nanowire array in region；GaN epitaxial layer in the AlGaN/GaN HEMTs without grid is
The GaN layer in semi-polarity face (11-22)；The GaN epitaxial layer includes GaN cushions, GaN channel layers and GaN cap；The GaN
Channel layer is located at the upper surface of GaN cushions；The plane included angle of the oblique ZnO nanowire array and area of grid be 30~
35°.The ultraviolet detector that the present invention is provided based on traditional AlGaN/GaN HEMTs (HETM) structure,
The oblique growing ZnO nano-wire array of area of grid of HEMT without grid, oblique growing ZnO nano-wire array
Photosensitive area is bigger, so as to improve the detection efficient of detector；And in the UV detector structure that the present invention is provided outside GaN
Prolong the GaN layer that layer is semi-polarity face, the AlGaN/GaN heterojunction structures in the semi-polarity face of formation can effectively alleviate Stark
Effect, solves the problem of two-dimensional electron gas is difficult to exhaust at polar surface AlGaN/GaN heterojunction boundaries, makes conducting channel between source and drain
Easily pinch off, so as to improve detector sensitivity and response speed；The ultraviolet detector sensitivity that the present invention is provided is high, rings
Answer speed fast and small volume, can apply to the detection tubercle point of sensor network, realize real-time, essence to ultraviolet ray intensity
Accurate, efficient detection.Embodiment shows that the ultraviolet detector that the present invention is provided is in the 20mW/cm that wavelength is 365nm2Ultraviolet light
According under, when biasing as 1V, the response time can reach 400ms, and the ratio between photoelectric current and dark current can reach 106。
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of substrate in the embodiment of the present invention；
Fig. 2 is the diagrammatic cross-section that the embodiment of the present invention prepares resulting structures after AlN nucleating layers on substrate；
Fig. 3 is the diagrammatic cross-section that the embodiment of the present invention prepares resulting structures after GaN cushions on AlN nucleating layers；
Fig. 4 is the diagrammatic cross-section that the embodiment of the present invention prepares resulting structures after GaN channel layers on GaN cushions；
Fig. 5 is the diagrammatic cross-section that the embodiment of the present invention prepares resulting structures after AlGaN potential barrier on GaN channel layers；
Fig. 6 is the diagrammatic cross-section of semi-polarity AlGaN/GaN epitaxial slice structures obtained by the embodiment of the present invention；
Fig. 7 is that the embodiment of the present invention prepares resulting structures after source, drain electrode on semi-polarity AlGaN/GaN epitaxial wafers surface
Diagrammatic cross-section；
Fig. 8 is the diagrammatic cross-section of resulting structures after deposit passivation layer in the embodiment of the present invention；
Fig. 9 is that the section of AlGaN/GaN high electron mobility transistor structure of the gained without grid in the embodiment of the present invention shows
It is intended to；
Figure 10 is the AlGaN/GaN ultraviolet detectors modulated obtained by the embodiment of the present invention based on oblique ZnO nanowire array
The diagrammatic cross-section of structure；
Figure 11 is the ultraviolet spies of AlGaN/GaN modulated based on oblique ZnO nanowire array prepared to the embodiment of the present invention
Survey the schematic diagram that device applies ultraviolet light；
In Fig. 1~Figure 11：1- substrates；2-AlN nucleating layers；3-GaN cushions；4-GaN channel layers；5- two-dimensional electron gas；
6-AlGaN barrier layers；7-GaN cap layers；8- drain electrodes；9- source electrodes；10- passivation layers；11- oblique ZnO nanowire arrays；12-
Ultraviolet light；
Figure 12 is the electron scanning micrograph of oblique ZnO nanowire array prepared by the embodiment of the present invention 1.
Embodiment
The invention provides a kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array, including nothing
The AlGaN/GaN HEMTs of grid and the AlGaN/GaN HEMT grids for being grown in no grid
The oblique ZnO nanowire array in region；
GaN epitaxial layer in the AlGaN/GaN HEMTs without grid is semi-polarity face (11-22)
GaN layer；The GaN epitaxial layer includes GaN cushions, GaN channel layers and GaN cap；The GaN channel layers are buffered positioned at GaN
The upper surface of layer；
The plane included angle of the oblique ZnO nanowire array and area of grid is 30~35 °.
The ultraviolet detector that the present invention is provided includes the HEMT without grid.In the present invention, the nothing
The structure of the HEMT of grid includes successively from bottom to top：Substrate, AlN nucleating layers, GaN cushions, GaN raceway grooves
Layer, AlGaN potential barrier, GaN cap and source electrode and drain electrode with GaN cap formation Ohmic contact.
In the present invention, the HEMT without grid includes substrate.The present invention does not have to backing material
Particular/special requirement, uses the Al of the typical substrate material in this area, preferably semi-polarity m faces2O3Substrate；The present invention is to lining
The thickness at bottom does not have particular/special requirement, uses thickness well known to those skilled in the art.
In the present invention, the HEMT without grid include being arranged on the AlN of the substrate surface into
Stratum nucleare.In the present invention, the thickness of the AlN nucleating layers is preferably 100~170nm, more preferably 140~160nm, most preferably
For 150nm.
In the present invention, the HEMT without grid includes being arranged on the AlN nucleating layers upper surface
GaN cushions.In the present invention, the GaN cushions are the GaN layer of semi-polarity face (11-22)；The GaN cushions
Thickness is preferably 1.5~3 μm, more preferably 1.5~2.5 μm, most preferably 2 μm.
In the present invention, the HEMT without grid includes being arranged on the GaN cushions upper surface
GaN channel layers.In the present invention, the GaN channel layers are the GaN layer of semi-polarity face (11-22)；The GaN channel layers
Thickness is preferably 10~30nm, more preferably 25nm.
In the present invention, the HEMT without grid includes being arranged on the GaN channel layer surfaces
AlGaN potential barrier.In the present invention, the thickness of the AlGaN potential barrier is preferably 10~30nm, more preferably 20nm；It is described
Al doping concentration is preferably 0.1~0.3 in AlGaN potential barrier, and more preferably 0.25；In a particular embodiment of the present invention,
The AlGaN potential barrier can be Al0.25Ga0.75N。
In the present invention, GaN channel layers and AlGaN potential barrier formation AlGaN/GaN hetero-junctions, due to the polarization of GaN layer
Effect, the two-dimensional electron gas of high electron mobility can be formed in the interface of AlGaN barrier layers and GaN channel layers；And this hair
GaN epitaxial layer in bright is the GaN in semi-polarity face, and the semi-polarity face AlGaN/GaN hetero-junctions of formation can effectively alleviate this
Plutarch effect, solves the problem of two-dimensional electron gas is difficult to exhaust at polar surface AlGaN/GaN heterojunction boundaries, in no illumination
When, two-dimensional electron gas is lower, and corresponding dark current is lower, makes between source and drain conducting channel easily pinch off, is also easier to make device
Part has more sensitive reaction under ultraviolet lighting, so as to improve detector sensitivity and response speed.
In the present invention, the HEMT without grid includes being arranged on the AlGaN potential barrier surface
GaN cap.In the present invention, the GaN cap is the GaN layer of semi-polarity face (11-22)；The thickness of the GaN cap is excellent
Elect 1~4nm, more preferably 2nm as.
In the present invention, the HEMT without grid includes the source with GaN cap formation Ohmic contact
Electrode and drain electrode.In the present invention, the source electrode and drain electrode and GaN cap formation Ohmic contact；The present invention is to described
Source electrode and the material of drain electrode do not have particular/special requirement, use source electrode conventional in the art and drain electrode；In this hair
In bright specific embodiment, the source electrode and drain electrode are preferably Ti/Al/Ni/Au electrodes；The Ti/Al/Ni/Au electrodes
Ti layers, Al layers, Ni layers and Au layers are followed successively by from bottom to top；Described Ti layers thickness is preferably 20~30nm, more preferably 25nm；
Described Al layers thickness is preferably 120~180nm, more preferably 140~160nm；Described Ni layers thickness is preferably 40~
60nm, more preferably 45~55nm；Described Au layers thickness is preferably 40~150nm, more preferably 60~120nm.
In the present invention, the spacing between the source electrode and drain electrode is preferably 8~12 μm, more preferably 10 μm；Grid
Polar region domain is located between source electrode and drain electrode；The present invention is to the spacing and drain electrode and grid between source electrode and area of grid
Spacing between polar region domain does not have particular/special requirement, uses spacing well known to those skilled in the art；The area of grid and
Region between source electrode between region and area of grid and drain electrode is covered by a passivation layer；The material of the passivation layer is preferred
For silicon nitride or silica；The silicon nitride is preferably Si3N4；The thickness of the passivation layer is preferably 100~140nm, more preferably
For 120nm.
The ultraviolet detector that the present invention is provided includes being grown in the oblique of no gate transistor with high electron mobility area of grid
ZnO nanowire array.In the present invention, the plane included angle of the oblique ZnO nanowire array and area of grid be preferably 30~
35 °, more preferably 32 °；The diameter of ZnO nano-wire is preferably 50~500nm in the oblique ZnO nanowire array, more preferably
For 80~180nm, most preferably 150nm；The length of ZnO nano-wire is preferably 1~4 μm in the oblique ZnO nanowire array,
More preferably 2 μm.
The present invention makes one-dimensional ZnO nanowires at semi-polarity face (11-22) using the GaN cap of semi-polarity face (11-22)
The oblique growth of the area of grid on GaN cap surface, oblique ZnO nanowire array has bigger photosensitive area, and surface is lived
Property it is high, have the higher speed of response to ultraviolet light wave band, under ultraviolet lighting, the voltage of area of grid can be adjusted rapidly, change
Two-dimensional electron gas at AlGaN/GaN heterojunction boundaries, and then change the output current of ultraviolet detector, so as to realize pair
The detection of ultraviolet light.
The invention provides the preparation method of ultraviolet detector described in such scheme, comprise the following steps：
AlGaN/GaN HEMTs without grid are provided；
Zinc salt, hexa and water are mixed, precursor solution is obtained；
The upper surface of the AlGaN/GaN HEMTs without grid is immersed in the precursor solution,
Carry out hydro-thermal reaction.
The present invention prepares the AlGaN/GaN HEMTs without grid.AlGaN/ of the invention to preparing no grid
The preparation method of GaN HEMTs does not have particular/special requirement, art personnel can be used known to method enter
It is prepared by row.In a particular embodiment of the present invention, the preparation method of the AlGaN/GaN HEMTs without grid
Preferably include following steps：
(1) using chemical vapour deposition technique successively substrate surface depositing Al N nucleating layers, GaN cushions, GaN channel layers,
AlGaN potential barrier and GaN cap, obtain semi-polarity AlGaN/GaN epitaxial wafers；
(2) active region mesa is etched using the method for dry etching, in the active area of semi-polarity AlGaN/GaN epitaxial wafers
On etch source region and drain region, source electrode is prepared in source region and drain region using electron-beam vapor deposition method respectively
And drain electrode；
(3) using plasma enhancing chemical vapor deposition passivation layer；
(4) passivation layer on area of grid, source electrode and drain electrode is removed by counter ion etching method, obtains no grid
AlGaN/GaN HEMTs；
The present invention is to the chemical vapour deposition technique used in such scheme, dry etching, electron-beam vapor deposition method, plasma
Enhancing chemical vapour deposition technique and the concrete operation method and operating condition of counter ion etching method do not have particular/special requirement, use ability
Known to field technique personnel prepared by operating method and operating condition.
The present invention mixes zinc salt, hexa and water, obtains precursor solution.In the present invention, the zinc salt is excellent
Elect zinc nitrate hexahydrate or Zinc diacetate dihydrate as；The mol ratio of the zinc salt and hexa is preferably 1：1~1：2,
More preferably 1：1；The concentration of zinc salt in the precursor solution is preferably 2.5~20mmol/L, more preferably 10mmol/L；Institute
The mass concentration for stating hexa in precursor solution is preferably 2.5~40mmol/L, more preferably 10mmol/L；The present invention
It is end-capping reagent using hexa and alkaline environment is provided, promotes nucleation and the growth of zinc oxide.
Obtain after precursor solution, the upper surface of the invention by the AlGaN/GaN HEMTs without grid
It is immersed in the precursor solution, carries out hydro-thermal reaction.In the present invention, the temperature of the hydro-thermal reaction is preferably 70~90
DEG C, more preferably 75~85 DEG C, most preferably 80 DEG C；The time of the hydro-thermal reaction is preferably 7~10h, more preferably 7.5~
9h, most preferably 8h；Hydro-thermal reaction is carried out present invention preferably uses reactor.The present invention is for the high electricity of the AlGaN/GaN without grid
The submergence degree of the upper surface of transport factor transistor does not have particular/special requirement, enables the area of grid of transistor upper surface and preceding
Liquid solution is contacted.
The present invention by hydro-thermal reaction the GaN cap surface in semi-polarity face area of grid growth of zinc oxide nano linear array
Row, need not make before can obtaining the ZnO nanowire array of oblique growth, and growth in area of grid without any Special controlling
Standby zinc oxide seed layer, preparation method is simple, easily implements.
The ultraviolet detector sensitivity that the present invention is provided is high, and fast response time has broad application prospects.
The operation principle for the ultraviolet detector that the present invention is provided is as follows：
Under dark condition, Oxygen Adsorption forms negative oxygen ion, exhausted in ZnO nano-wire in oblique ZnO nano-wire surface
Layer sets up negative potential, pushes two-dimensional electron gas (2DEG) at GaN channel layers, AlGaN/GaN heterojunction boundaries 2DEG concentration and drops
It is low, now there is faint dark current；
Under 365nm wave band ultraviolet lightings, a large amount of electron-hole pairs are produced in ZnO nano-wire, hole is to ZnO nano-wire
The depletion layer movement on surface, is recombined with negative oxygen ion, the negative potential reduction on ZnO nano-wire surface, and then makes AlGaN/GaN
The increase of 2DEG concentration, increases device output current at heterojunction boundary, so as to realize the regulation and control to area of grid voltage, changes
The output current of device, by the ratio size of photoresponse electric current and dark current, determines the relatively strong and weak of ultraviolet light.
In a particular embodiment of the present invention, the workflow of the ultraviolet detector is as follows：
(1) in the case of no ultraviolet lighting, voltage bias is applied to the ultraviolet detector that the present invention is provided, now had
Faint dark current；
(2) area of grid that the ultraviolet detector growth provided the present invention has oblique ZnO nanowire array carries out ultraviolet
Light irradiation；
(3) the photoresponse electric current under ultraviolet lighting is obtained；
(4) by the ratio size of photoresponse electric current and dark current, the power relatively of sensing ultraviolet light；
(5) ultraviolet light is removed, device returns to dark current state.
The AlGaN/GaN based on oblique ZnO nanowire array modulation provided with reference to embodiment the present invention is ultraviolet
Detector and preparation method thereof is described in detail, but they can not be interpreted as limiting the scope of the present invention.
Embodiment 1
Using the method for metal organic chemical vapor deposition (MOCVD) in m faces Al2O3Grown 150nmAlN nucleation
Layer, as shown in Fig. 1~Fig. 2；
Semi-polarity face (11-22) GaN cushions of 2 μ m-thicks are deposited in AlN nucleation layer surface using MOCVD method, such as
Shown in Fig. 3；
Thick semi-polarity face (11-22) the GaN channel layers of 25nm are grown in GaN buffer-layer surfaces using MOCVD method, such as
Shown in Fig. 4；
The thick Al of 20nm are grown in GaN channel layer surfaces using MOCVD method0.25Ga0.75N barrier layers, as shown in Figure 5；
Using MOCVD method in Al0.25Ga0.75Semi-polarity face (11-22) GaN caps thick N barrier layer superficial growths 2nm
Layer, obtains semi-polarity AlGaN/GaN epitaxial wafers, as shown in Figure 6；
Photoetching is carried out on semi-polarity AlGaN/GaN epitaxial wafers, whirl coating, front baking, exposure, rear baking, development system is passed sequentially through
It is standby go out active area figure；Using using BCl in reactive ion etching machine3And Cl2Gas is performed etching to epitaxial wafer, and etching depth is
300nm, isolates active area；Tu photoresist is revolved, source-drain electrode region is prepared by photoetching；Deposited by electron beam evaporation prepares Ti/
Al/Ni/Au (30/180/40/150nm) layer, then by photoresist lift off, in 900 DEG C of N2Quick thermal annealing process under atmosphere
35 seconds, so as to prepare source-drain electrode, and Ohmic contact is constituted with GaN cap, as shown in Figure 7；
Si thick using plasma enhancing chemical vapor deposition (PECVD) deposit 120nm3N4Medium is as passivation layer, such as
Shown in Fig. 8；
Tu photoresist is revolved, area of grid and source-drain electrode hole are prepared by photoetching, using photoresist as mask, by anti-
Ion etching is answered, CF is used4Plasma removes the Si on area of grid and source-drain electrode3N4Passivation layer, then shells photoresist
From obtaining the AlGaN/GaN HEMTs of no grid, as shown in Figure 9；
Oblique ZnO nanowire array is grown in grid by hydro-thermal method：By zinc nitrate hexahydrate (Zn (NO3)2·6H2O)
10mmol and hexa (HMTA) 10mmol are dissolved in 1L deionized waters, are stirred, are grown as ZnO nano-wire
Precursor solution；20ml precursor solutions are taken to be put into hydrothermal reaction kettle, then by the AlGaN/GaN high electron mobility crystal without grid
The upper table placed face down of pipe, makes it be suspended in reactor, is in contact with solution surface, and 8h is reacted under conditions of 80 DEG C,
Oblique ZnO nanowire array is obtained in area of grid；Device with oblique ZnO nanowire array is washed with deionized water
Wash, and dried up with nitrogen, the AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array are obtained, such as Figure 10 institutes
Show.
The schematic diagram for applying ultraviolet to the ultraviolet detector that the present invention is provided is as shown in figure 11；
Obtained oblique ZnO nanowire array is observed using SEM, acquired results such as Figure 12 institutes
Show；According to Figure 12 as can be seen that measured oblique ZnO nano-wire and the angle of area of grid are 34.7 °, nanowire length is
1.2826 μm, for overall oblique ZnO nanowire array, the angular range with area of grid is 30~35 °, and nano wire is put down
Equal length is about 2 μm；
ZnO nano-wire average diameter is detected, the average diameter that can obtain ZnO nano-wire is about 200nm.
Ultraviolet detection performance to gained ultraviolet detector is detected, in the 20mW/cm that wavelength is 365nm2It is ultraviolet
Under illumination, when biasing as 1V, the response time can reach 400ms, and the ratio between photoelectric current and dark current can reach 106。
Embodiment 2
With m faces Al2O3For substrate, the AlGaN/GaN high electron mobilities without grid are prepared using the method in embodiment 1 brilliant
Body pipe, control AlN nucleating layer thickness be 140nm, GaN buffer layer thickness be 1.5 μm, GaN channel layer thickness be 20nm, AlGaN
Barrier layer thickness is that 15nm, the thickness of GaN cap are 1.5nm, and source electrode and drain electrode are consistent with embodiment 1；
Oblique ZnO nanowire array is grown in area of grid by hydro-thermal method：By zinc nitrate hexahydrate (Zn (NO3)2·
6H2O) 10mmol and hexa (HMTA) 20mmol are dissolved in 1L deionized waters, are stirred, are used as ZnO nano
The precursor solution of line growth；30ml precursor solutions are taken to be put into hydrothermal reaction kettle, then by the AlGaN/GaN high electron mobilities without grid
The upper table placed face down of rate transistor, makes it be suspended in reactor, is in contact with solution surface, anti-under conditions of 90 DEG C
7.5h is answered, oblique ZnO nanowire array is obtained in area of grid；By the device with oblique ZnO nanowire array spend from
Sub- water washing, and dried up with nitrogen, obtain the AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array.
Obtained oblique ZnO nanowire array is observed using SEM, oblique ZnO nano-wire can be obtained
The angular range of array and area of grid is 30~35 °, and nano wire average length is about 1.2 μm；
ZnO nano-wire average diameter is detected, the average diameter that can obtain ZnO nano-wire is about 150nm.
Ultraviolet detection performance to gained ultraviolet detector is detected, in the 20mW/cm that wavelength is 365nm2It is ultraviolet
Under illumination, when biasing as 1V, the response time can reach 400ms, and the ratio between photoelectric current and dark current can reach 106。
Embodiment 3
With m faces Al2O3For substrate, the AlGaN/GaN high electron mobilities without grid are prepared using the method in embodiment 1 brilliant
Body pipe, control AlN nucleating layer thickness be 160nm, GaN buffer layer thickness be 2.5 μm, GaN channel layer thickness be 15nm, AlGaN
Barrier layer thickness is that 12nm, the thickness of GaN cap are 2.5nm, and source electrode and drain electrode are consistent with embodiment 1；
Oblique ZnO nanowire array is grown in area of grid by hydro-thermal method：By zinc nitrate hexahydrate (Zn (NO3)2·
6H2O) 20mmol and hexa (HMTA) 20mmol are dissolved in 1L deionized waters, are stirred, are used as ZnO nano
The precursor solution of line growth；30ml precursor solutions are taken to be put into hydrothermal reaction kettle, then by the AlGaN/GaN high electron mobilities without grid
The upper table placed face down of rate transistor, makes it be suspended in reactor, is in contact with solution surface, anti-under conditions of 75 DEG C
9h is answered, oblique ZnO nanowire array is obtained in area of grid；By the device deionization with oblique ZnO nanowire array
Water washing, and dried up with nitrogen, obtain the AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array.
Obtained oblique ZnO nanowire array is observed using SEM, oblique ZnO nano-wire can be obtained
The angle of array and area of grid is that scope is 30~35 °, and nano wire average length is about 2.5 μm；
ZnO nano-wire average diameter is detected, the average diameter that can obtain ZnO nano-wire is about 300nm.
Ultraviolet detection performance to gained ultraviolet detector is detected, in the 20mW/cm that wavelength is 365nm2It is ultraviolet
Under illumination, when biasing as 1V, the response time can reach 400ms, and the ratio between photoelectric current and dark current can reach 106。
As seen from the above embodiment, the AlGaN/GaN based on oblique ZnO nanowire array modulation that prepared by the present invention is ultraviolet
Detector improves detector sensitivity and response speed by growing oblique ZnO nanowire array in area of grid, can
To realize to the real-time, accurate of ultraviolet ray intensity, efficient detection, have broad application prospects.
As seen from the above embodiment, it is only the preferred embodiment of the present invention that the present invention is described above, it is noted that for
For those skilled in the art, under the premise without departing from the principles of the invention, can also make it is some improvement and
Retouching, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of AlGaN/GaN ultraviolet detectors modulated based on oblique ZnO nanowire array, including the AlGaN/GaN without grid
HEMT and it is grown in the oblique of the AlGaN/GaN HEMT area of grid without grid
ZnO nanowire array；
GaN epitaxial layer in the AlGaN/GaN HEMTs without grid is the GaN of semi-polarity face (11-22)
Layer；The GaN epitaxial layer includes GaN cushions, GaN channel layers and GaN cap；The GaN channel layers are located at GaN cushions
Upper surface；
The plane included angle of the oblique ZnO nanowire array and area of grid is 30~35 °.
2. ultraviolet detector according to claim 1, it is characterised in that ZnO nano in the oblique ZnO nanowire array
A diameter of 50~500nm of line.
3. ultraviolet detector according to claim 1, it is characterised in that ZnO nano in the oblique ZnO nanowire array
The length of line is 1~4 μm.
4. ultraviolet detector according to claim 1, it is characterised in that the AlGaN/GaN high electron mobilities without grid
The structure of rate transistor includes successively from bottom to top：Substrate, AlN nucleating layers, GaN cushions, GaN channel layers, AlGaN potential barriers
Layer, GaN cap and source electrode and drain electrode with GaN cap formation Ohmic contact；
Area of grid is located between source electrode and drain electrode；
Region between the area of grid and source electrode between region and area of grid and drain electrode is covered by a passivation layer.
5. ultraviolet detector according to claim 4, it is characterised in that the thickness of the AlN nucleating layers is 100~
170nm；
The thickness of the GaN cushions is 1.5~3 μm；
The thickness of the GaN channel layers is 10~30nm；
The thickness of the AlGaN potential barrier is 10~30nm；
The thickness of the GaN cap is 1~4nm；
The thickness of the passivation layer is 100~140nm.
6. the ultraviolet detector according to claim 4 or 5, it is characterised in that the composition of the passivation layer be silicon nitride or
Silica.
7. the preparation method of ultraviolet detector, comprises the following steps described in claim 1~6 any one：
AlGaN/GaN HEMTs without grid are provided；
Zinc salt, hexa and water are mixed, precursor solution is obtained；
The upper surface of the AlGaN/GaN HEMTs without grid is immersed in the precursor solution, carried out
Hydro-thermal reaction.
8. preparation method according to claim 7, it is characterised in that the temperature of the hydro-thermal reaction is 70~90 DEG C；Institute
The time for stating hydro-thermal reaction is 7~10h.
9. preparation method according to claim 7, it is characterised in that the mol ratio of the zinc salt and hexa is
1：1~1：2.
10. the preparation method according to claim 7 or 8 or 9, it is characterised in that the concentration of zinc salt in the precursor solution
For 2.5~20mmol/L, the concentration of hexa is 2.5~40mmol/L.
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